WO2017117978A1 - 用于蒸镀的加热装置、蒸镀设备以及蒸镀方法 - Google Patents

用于蒸镀的加热装置、蒸镀设备以及蒸镀方法 Download PDF

Info

Publication number
WO2017117978A1
WO2017117978A1 PCT/CN2016/091726 CN2016091726W WO2017117978A1 WO 2017117978 A1 WO2017117978 A1 WO 2017117978A1 CN 2016091726 W CN2016091726 W CN 2016091726W WO 2017117978 A1 WO2017117978 A1 WO 2017117978A1
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
vapor deposition
heating unit
movable
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/091726
Other languages
English (en)
French (fr)
Inventor
黄俊淞
刘晓云
叶岚凯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Hefei Xinsheng Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US15/507,516 priority Critical patent/US10870914B2/en
Publication of WO2017117978A1 publication Critical patent/WO2017117978A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source

Definitions

  • Embodiments of the present invention relate to a heating apparatus and an evaporation apparatus for vapor deposition, and an evaporation method.
  • the organic material is an important guarantee for the stability of the OLED (Organic Light-Emitting Diode) component.
  • OLED Organic Light-Emitting Diode
  • the large generation line is formed by vapor deposition, which requires the evaporation heating system to ensure a stable plating rate. Maintain material properties so that it does not deteriorate due to heat.
  • the present invention provides a heating device, an evaporation device, and an evaporation method for vapor deposition.
  • the heating device includes a crucible for containing an evaporation material; a movable heating unit disposed outside the crucible, the movable heating unit is movable in a direction perpendicular to a bottom surface of the crucible; and a controller for controlling the movable heating The height of the unit to the bottom of the raft. Therefore, the heating device can solve the problem that the conventional vapor deposition equipment heating uneven deposition material is easy to be sprayed, the performance is likely to be deteriorated, and the vapor deposition rate is not stabilized.
  • At least one embodiment of the present invention provides a heating apparatus for vapor deposition, comprising: a crucible for containing an evaporation material; a movable heating unit disposed outside the crucible and perpendicular to a bottom surface of the crucible Movable in the direction; and a controller for controlling the height of the movable heating unit to the bottom surface of the crucible.
  • At least one embodiment of the present invention also provides an evaporation apparatus comprising the above heating apparatus.
  • At least one embodiment of the present invention also provides an evaporation method for a heating device for vapor deposition, the heating device comprising a crucible; a movable heating unit disposed outside the crucible and perpendicular to a bottom surface of the crucible a direction movable; and a controller for controlling the height of the movable heating unit to the bottom surface of the crucible, the evaporation method comprising: adding an evaporation material to the crucible; setting the movable heating a position of the unit higher than the vapor deposition material; heating and evaporating the evaporation material using the movable heating unit; and controlling the movable heating unit in a direction perpendicular to a bottom surface of the crucible using the controller Move on.
  • Figure 1 is a schematic view of a heating device in an evaporation apparatus
  • FIG. 2a is a schematic diagram of a heating device for vapor deposition according to an embodiment of the present invention
  • FIG. 2b is a schematic diagram of a controller in a heating device for vapor deposition according to an embodiment of the present invention
  • 2c is a schematic view showing the operation of a heating device for vapor deposition according to an embodiment of the present invention
  • FIG. 3 is a schematic view of another heating device for vapor deposition according to an embodiment of the present invention.
  • FIG. 4 is a top plan view of a heating device for vapor deposition according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of an evaporation method according to an embodiment of the invention.
  • the existing OLED line source evaporation is as shown in FIG. 1.
  • the vapor deposition material is placed in the crucible 10, and the heating source is a heating wire 11 wound and fixed on the outside of the crucible 10, and the vapor deposition material is heated and vaporized from the nozzle 12 during operation. Out, film formation on the substrate.
  • the overall heating design increases the heating rate of the material as a whole, but on the other hand, it is easy to cause the material to be locally heated too quickly to cause splashing, and with the continuous expansion of the generation line, the production cycle is continuously extended, and the volume of the crucible is increased. It is also expanding, and the more uneven the material is heated The problem is serious and the splashing phenomenon becomes more and more serious.
  • the overall heating of the crucible will also cause the local (mainly bottom) organic material to be exposed to high heat environments all the time, due to thermal decomposition and the like.
  • the current cost of organic materials is relatively high.
  • the idle time of the equipment is reduced.
  • the vapor deposition rate needs to be adjusted at some time, and the cooling mode is required at this time, but In the cooling mode, if the heating source is turned off at one time, the vapor deposition rate will change instantaneously, and more time will be required for stabilization. If the slow cooling mode is used, the problem of adjusting the evaporation rate is too long.
  • the invention provides a heating device and a vapor deposition device for vapor deposition, which solves the problem that the conventional vapor deposition equipment heating uneven deposition material is easy to be sprayed, is prone to performance deterioration, and is not suitable for stability when the vapor deposition rate is adjusted.
  • the embodiment provides a heating device for vapor deposition.
  • the heating device comprises: a crucible 102 for containing an evaporation material; a movable heating unit 13 disposed outside the crucible 102 and vertically Movable in the direction of the bottom surface of the crucible 102; and a controller for controlling the height of the movable heating unit 13 to the bottom surface of the crucible 102. It should be noted that the height of the movable heating unit to the bottom surface of the crucible is converted into the height (or distance) of the movable heating unit to the vapor deposition material during vapor deposition.
  • the movable heating unit can move in a direction perpendicular to the bottom surface of the crucible, the vapor deposition material is reduced by evaporation during evaporation, and the liquid level in the crucible is varied. The vapor deposition progresses and gradually decreases.
  • the movable heating unit is controlled by the controller to move in a direction perpendicular to the bottom surface of the crucible, and the movable heating device and the vapor deposition material can be adjusted as the evaporation material is reduced.
  • the distance allows the vapor deposition material to be uniformly heated to avoid problems such as ejection of the vapor deposition material and deterioration of performance.
  • the controller can control the movable heating unit to move in a direction perpendicular to the bottom surface of the crucible to adjust the distance between the movable heating device and the evaporation material to adjust the evaporation rate of the evaporation material, thereby adjusting the evaporation rate.
  • the heating device further includes: a weighing sensing device 14 disposed under the crucible 102 for weighing the crucible 102 and the crucible 102.
  • the weight of the vapor deposition material is output and weight information is output.
  • the controller 18 is in communication with the load sensing device 14 and the movable heating unit 13, respectively, and the controller 18 receives the weighing sensor device.
  • the output weight information is 14 and the height of the movable heating unit 13 to the bottom surface of the crucible 102 is controlled based on the weight information.
  • the movable heating unit 13 can be controlled by the controller 18 to the bottom surface of the crucible 102 according to the weight information. The height is thus achieved to achieve uniform heating of the evaporation material and to adjust the evaporation rate.
  • the controller can calculate the crucible according to the weight information (the weight of the evaporation material plus the weight of the crucible)
  • the liquid level height of the vapor deposition material, and the height of the movable heating unit to the bottom surface of the crucible is controlled according to the liquid level height.
  • the bottom area thereof can be obtained according to the radius of the bottom area, the inclination angle of the side wall is zero degree, and the weight of the crucible is also known, and according to the weight of the evaporation raw material, The liquid level of the vapor deposition material is calculated from the density and the bottom area of the crucible.
  • the movable heating unit at the time of vapor deposition, the movable heating unit is located at a position higher than the evaporation raw material. Therefore, during the vapor deposition, the movable heating unit heats the vapor deposition material from the top to the bottom, and the vapor deposition material in the crucible is heated uniformly, thereby avoiding the fact that the bottom evaporation material is always exposed to the high heat environment, and the heat is too fast to cause the splash. Or performance degradation.
  • the controller 18 includes a processor 181 for calculating the liquid level height of the vapor deposition material in the crucible 102 based on the weight information.
  • the controller 18 further includes a movable heating unit driving circuit 182, and the movable heating unit driving circuit 182 and the processor 181 and the movable heating unit, respectively. 13 is connected for controlling the height of the bottom surface of the movable heating unit 13 and the crucible 102 according to the liquid level height calculated by the processor 181.
  • the embodiment provides a heating device for vapor deposition.
  • the device includes: a crucible 102 for containing an evaporation material; a movable heating unit 13 disposed outside the crucible 102 and being vapor-deposited.
  • the movable heating unit is located above the evaporation raw material
  • the movable heating unit 13 is located above the upper surface of the evaporation raw material
  • the re-sensing device 14 is disposed below the crucible 102 for weighing the weight of the vapor deposition material in the crucible 102 and the crucible 102 and outputting weight information; and a controller for receiving the output of the weighing sensor device 14 according to Calculating the liquid level height of the vapor deposition material in the 102 and the weight of the vapor deposition material in the crucible 102, and controlling the height of the movable heating unit 13 to the vapor deposition material according to the liquid level, that is, The height of the movable heating unit 13 to the bottom surface of the crucible 102 can be controlled.
  • the controller 18 is in communication with the weighing sensing device 14, and the controller 18 is in communication with the movable heating unit 13 and can control the movable heating. Unit 13 moves. It should be noted that the foregoing phase communication may be implemented by means of signal line connection or by wireless, and the disclosure is not limited herein.
  • the movable heating unit 13 is disposed outside the crucible 102, and is located above the vapor deposition material during vapor deposition, and heats the vapor deposition material from the top to the bottom.
  • the vapor deposition material in the crucible 10 is uniformly heated to avoid steaming at the bottom.
  • the plating material is always exposed to high heat, and the heat is too fast to cause splashing or deterioration of performance.
  • the weighing sensing device 14 is disposed below the crucible 102 and connected to the controller via a signal line (or connected by wireless communication) for weighing the weight of the vapor deposition material in the crucible 102 and the crucible 102 and outputting it to the controller. .
  • the weighing sensor device 14 converts the weight of the vapor deposition material in the crucible 102 and the crucible 102 into an electrical signal output for controlling the mobile heating unit 13 by the controller.
  • the controller receives the output of the weighing sensor device 14, calculates the liquid level height of the vapor deposition material in the crucible 102 based on the weight of the vapor deposition material in the crucible 102 and the crucible 102, and then controls the position of the movable heating unit 13 according to the adjustment.
  • the height of the evaporation heating unit 13 to the vapor deposition material that is, the height of the movable heating unit 13 to the bottom surface of the crucible 102 can be adjusted.
  • the vapor deposition material is reduced by evaporation, and the liquid level in the crucible gradually decreases as the vapor deposition progresses.
  • the movable heating unit can be controlled by the controller to move in a direction perpendicular to the bottom surface of the crucible, with evaporation
  • the distance between the movable heating device and the vapor deposition material is adjusted by reducing the material, so that the vapor deposition material can be uniformly heated to avoid problems such as ejection of the evaporation material and deterioration of performance.
  • the controller can control the movable heating unit to move in a direction perpendicular to the bottom surface of the crucible to adjust the distance between the movable heating device and the evaporation material to adjust the evaporation rate of the evaporation material, thereby adjusting the evaporation rate.
  • the weighing sensor device may include a semiconductor pressure sensor.
  • the present disclosure includes, but is not limited to, the weighing sensing device may also include other types of sensors to achieve weighing.
  • the controller controls the height of the movable heating unit to the evaporation raw material, so that the height of the movable heating unit to the evaporation raw material is kept constant, on the one hand, stable vapor deposition rate can be obtained, and on the other hand, film formation conditions (mainly Temperature) will not be steamed The consumption of the plating material is greatly changed, and the quality of the produced film is better.
  • the controller controls the height of the movable heating unit to the evaporation raw material, so that the height of the movable heating unit to the evaporation raw material is kept constant, on the one hand, stable vapor deposition rate can be obtained, and on the other hand, film formation conditions (mainly Temperature) will not be steamed The consumption of the plating material is greatly changed, and the quality of the produced film is better.
  • controller calculates the liquid level height of the vapor deposition material in the crucible, and calculates the evaporation rate according to the input vapor deposition rate and the current liquid level of the vapor deposition material.
  • the plating rate which can move the required height setting between the heating unit and the evaporation material, and then convert the setting into an instruction recognizable by the movable heating unit and transmit it to the mobile heating unit.
  • the calculation process can use the data and formulas input in advance, and can be set by a person skilled in the art according to specific application conditions, and will not be described in detail herein.
  • the controller includes logic that implements the above described control functions, with certain memory and programming functions, such as a microcontroller.
  • the heating device controls the movement of the heating unit by using the quality feedback signal, and can solve the problem of material splashing or partial material deterioration caused by uneven heating of the raw materials in the crucible during long-term evaporation.
  • the heating efficiency of the vapor deposition material can be improved (for example, when the liquid level height of the vapor deposition material is lowered, the movable heating unit can be lowered accordingly, and the movable heating unit and the vapor deposition material are shortened.
  • the heating apparatus 100 includes a crucible main chamber 101 and a crucible 102 disposed in the crucible main chamber 101.
  • the movable heating unit 13 may include a heating unit 133 and a driving mechanism 135 for driving the heating unit 133 away from or near the vapor deposition material (the bottom surface of the crucible 102).
  • the heating unit 133 can be, for example, a heating wire 133 disposed on the outer wall of the crucible 102.
  • the driving mechanism 135 includes: at least two uprights 131 having a longitudinal direction perpendicular to the bottom of the crucible 102; Two movable brackets 132 on the column 131, the two ends of the heating wire 133 are respectively fixed to the movable brackets 132 of the two columns; and a driving motor 134 for driving the movable bracket 132 to move along the column 131.
  • the embodiments of the present invention include but are not limited thereto, and the driving mechanism may also be other driving structures.
  • the longitudinal direction of the column 131 is perpendicular to the bottom of the crucible 102, and is not strictly limited as long as the direction in which the pillars 131 are disposed enables the heating wire 133 to move along the column 131 to approach or away from the vapor deposition material in the crucible 102.
  • the weighing sensor device 14 is disposed in the main cavity 101 and is located below the crucible 102. Thereby, damage or contamination of the high temperature environment of the crucible 102 or the vapor deposition material symmetric resensing device 14 can be avoided.
  • the driving motor 134 is configured to drive the movable bracket 132 to move along the column 131.
  • the movable bracket 132 has a block shape, and the driving motor 134 is driven. It can be directly disposed in the block movable bracket 132.
  • the number of the heating wires 133 is not limited to one, and may be plural in parallel.
  • the outer wall of the crucible 102 is a cylinder, and the heating wire 133 can be disposed around the outer wall of the crucible 102, thereby achieving uniform heating.
  • the heating wire can also be disposed around the outer wall of the crucible, so as to achieve uniform heating, which will not be repeated herein.
  • the heating device provided by the embodiment of the present invention is applied to the evaporation of the organic material in the OLED manufacturing.
  • the weighing sensor device 14 located below the crucible 102 will signal.
  • the transmission and drive mechanism adjusts the position of the heating wire in the heating unit so that the organic material has the highest heating rate without splashing.
  • the controller controls the heating wire 133 to move and heat according to the quality change signal fed back by the weighing device 14; thus, the exposure time of the organic material in the high temperature can be reduced, and the steam can be continuously maintained.
  • the evaporation rate required for plating is applied to the evaporation of the organic material in the OLED manufacturing.
  • the heating device may further include: a temperature sensing device 17 for measuring the temperature of the evaporation material; the temperature sensing device 17 and the controller Connected (by signal line connection or wireless connection), the controller is also used to control the height of the movable heating unit to the evaporation material according to the temperature of the evaporation raw material.
  • the temperature sensing device may be disposed in the crucible.
  • the temperature sensing device may also be disposed outside the crucible, for example, by measuring the infrared spectrum emitted by the evaporation material to obtain the temperature of the evaporation material.
  • the vapor deposition rate needs to be adjusted at some time, so the cooling mode is required.
  • the cooling mode if the heating source is turned off once, the vapor deposition rate will change instantaneously. Subsequent need more time for stabilization. If the slow cooling mode is used, it also faces the problem of adjusting the evaporation plating time too long.
  • the heating device of the present invention can immediately cool down by heating the heating wire away from the evaporation raw material. When the temperature changes too much, the driving mechanism can be immediately controlled by the temperature signal to move the heating unit, thereby increasing the cooling speed and relatively reducing unnecessary organic material loss.
  • a movable unit is disposed above the external vapor deposition material of the crucible
  • the heating unit heats the evaporation raw material from the upper portion
  • the weighing sensing device is disposed below the crucible, and the weighing sensing device weighs the weight of the vapor deposition material in the crucible and the crucible and outputs it to the controller, and the controller according to the crucible and the crucible
  • the evaporation rate it can be directly adjusted by controlling the height of the movable heating unit to the evaporation raw material. There is no evapor
  • the embodiment provides an evaporation apparatus comprising the heating device of any of the above.
  • the vaporization device employs a movable heating unit, and in different process stages, the heating unit can be moved up and down to increase the temperature of the material for heating or cooling, and the heating efficiency of the material is improved.
  • the weighing sensing device controls the heating unit to move to an appropriate position by converting the material quality into an electrical signal.
  • the vapor deposition apparatus of the present invention can pass through the precision weighing sensing device according to each different material loss amount in the crucible. The measurement is fed back to the controller for controlling the heating unit, so that the heating unit moves, thereby achieving uniform heating of the material in the crucible, and avoiding the organic material having high heat sensitivity due to uneven heating during long heating.
  • the vapor deposition apparatus can uniformly heat the vapor deposition material in the crucible, avoid the phenomenon of ejecting of the vapor deposition material, deteriorate performance, and the like, and facilitate adjustment of the vapor deposition rate.
  • the embodiment provides an evaporation method
  • the heating device includes a crucible; a movable heating unit disposed outside the crucible and movable in a direction perpendicular to a bottom surface of the crucible; and a controller for controlling the movable heating unit to The height of the bottom surface of the crucible, the evaporation method includes steps 401-404.
  • Step 401 Adding an evaporation raw material to the crucible.
  • Step 402 The movable heating unit is disposed at a position higher than the evaporation raw material.
  • Step 403 Heating and evaporating the evaporation raw material using a movable heating unit.
  • Step 404 Control the movable heating unit to move in a direction perpendicular to the bottom surface of the crucible using the controller.
  • the movable heating unit is located above the vapor deposition material during vapor deposition, and the vapor deposition raw material is heated from the top to the bottom, and the vapor deposition material in the crucible is heated uniformly to avoid bottom evaporation.
  • the raw materials are always exposed to high heat, and the heat is too fast to cause splashing or deterioration of performance.
  • the evaporation material is reduced by evaporation, and the movable heating unit can be controlled by the controller to be perpendicular to the crucible.
  • the controller can control the movable heating unit to move in a direction perpendicular to the bottom surface of the crucible to adjust the distance between the movable heating device and the evaporation material to adjust the evaporation rate of the evaporation material, thereby adjusting the evaporation rate.
  • the heating device further includes a weighing sensor device disposed under the crucible
  • the evaporation method includes: weighing the crucible and the crucible by using the weighing sensor device The weight of the raw material and the weight information are output; the liquid level height of the vapor deposition material in the crucible is calculated according to the weight information; and the movable heating unit is controlled to move in a direction perpendicular to the bottom surface of the crucible according to the liquid level height.
  • the liquid level of the vapor deposition material in the crucible can be calculated by the weight information measured by the weighing sensor. Height; then, the controller can move the direction of the movable heating unit in a direction perpendicular to the bottom surface of the crucible according to the liquid level, thereby achieving uniform heating of the evaporation material and adjusting the evaporation rate.
  • the controller is used to control the height of the movable heating unit to the evaporation raw material to be kept constant. Thereby, the degree of heating uniformity of the vapor deposition material is further improved.
  • the heating device further includes a temperature sensing device
  • the evaporation method includes: measuring a temperature of the evaporation material using the temperature sensing device; and using the controller according to the evaporation raw material The temperature control moves the heating unit to the height of the evaporation material.
  • the height of the movable heating unit to the vapor deposition material can be controlled according to the temperature of the vapor deposition material, thereby achieving uniform heating of the vapor deposition material and adjustment of the vapor deposition rate.
  • the controller when the temperature of the vapor deposition material is lowered, the controller is used to control the movable heating unit to move toward the vapor deposition material, thereby improving the vaporization of the movable heating unit.
  • the heating capacity of the raw materials when the temperature of the vapor deposition material is lowered, the controller is used to control the movable heating unit to move toward the vapor deposition material, thereby improving the vaporization of the movable heating unit.
  • the controller when the temperature of the vapor deposition material rises, the controller is used to control the movable heating unit to move away from the vapor deposition material, thereby reducing the vaporization of the movable heating unit.
  • the heating capacity of the raw materials when the temperature of the vapor deposition material rises, the controller is used to control the movable heating unit to move away from the vapor deposition material, thereby reducing the vaporization of the movable heating unit.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种用于蒸镀的加热装置和蒸镀装置以及蒸镀方法。该加热装置包括：用于盛装蒸镀原料的坩埚(102)；设置于坩埚(102)的外部的可移动加热单元(13)，可移动加热单元(13)在垂直于所述坩埚(102)的底面的方向上可移动；以及控制器(18)，用于控制所述可移动加热单元(13)到所述坩埚(102)的底面的高度。该加热装置可解决蒸镀设备加热不均导致的蒸镀材料易喷射、易发生性能劣化等问题。

Description

用于蒸镀的加热装置、蒸镀设备以及蒸镀方法 技术领域
本发明实施例涉及一种用于蒸镀的加热装置和蒸镀设备以及蒸镀方法。
背景技术
有机材料是OLED(Organic Light-Emitting Diode，有机发光二极管)元件稳定性的重要保证，目前大世代线均采用蒸镀方式成膜，这就要求蒸镀加热系统在保证稳定的镀率的同时，保持材料性能使其不因受热而发生劣化。
发明内容
本发明提供一种用于蒸镀的加热装置和蒸镀设备以及蒸镀方法。该加热装置包括用于盛装蒸镀原料的坩埚；设置于坩埚的外部的可移动加热单元，可移动加热单元在垂直于坩埚的底面的方向上可移动；以及控制器，用于控制可移动加热单元到坩埚的底面的高度。由此，该加热装置可解决现有蒸镀设备加热不均蒸镀材料易喷射、易发生性能劣化，蒸镀镀率调整时不宜稳定的问题。
本发明至少一实施例提供一种用于蒸镀的加热装置，包括：坩埚，用于盛装蒸镀原料；可移动加热单元，设置于所述坩埚的外部并在垂直于所述坩埚的底面的方向上可移动；以及控制器，用于控制所述可移动加热单元到所述坩埚的底面的高度。
本发明至少一实施例还提供一种蒸镀设备，包括上述的加热装置。
本发明至少一实施例还提供一种用于蒸镀的加热装置的蒸镀方法，所述加热装置包括坩埚；可移动加热单元，设置于所述坩埚的外部并在垂直于所述坩埚的底面的方向上可移动；以及控制器，用于控制所述可移动加热单元到所述坩埚的底面的高度，所述蒸镀方法包括：向所述坩埚加入蒸镀原料；设置所述可移动加热单元的位置高于所述蒸镀原料；使用所述可移动加热单元加热并蒸发所述蒸镀原料；以及使用所述控制器控制所述可移动加热单元在垂直于所述坩埚的底面的方向上移动。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要 使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1为一种蒸镀设备中的加热装置示意图；
图2a为本发明一实施例提供的一种用于蒸镀的加热装置的示意图；
图2b为本发明一实施例提供的一种用于蒸镀的加热装置中的控制器的示意图；
图2c为本发明一实施例提供的一种用于蒸镀的加热装置的工作示意图；
图3为本发明一实施例提供的另一中用于蒸镀的加热装置的示意图；
图4为本发明一实施例提供的一种用于蒸镀的加热装置的俯视示意图；以及
图5为本发明一实施例提供的一种蒸镀方法的示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。
现有的OLED线源蒸镀如图1所示，坩埚10内放置蒸镀原料，加热源为缠绕并固定于坩埚10外部的加热线11，工作时蒸镀原料受热气化从喷嘴12中逸出，在衬底上成膜。这种整体加热设计一方面提高了材料整体的加热速率，但是另一方面也极易引起材料局部受热过快造成喷溅，且随着世代线的不断扩大，生产周期的不断延长，坩埚的容积也在不断扩大，材料受热不均现象会越 发严重，喷溅现象也随之变得越来越严重。另外，坩埚整体加热的方式也会使得局部(主要是底部)的有机材料一直暴露于高热环境中，因为热分解之类的原因而劣化。
而且，当前有机材料成本较高，为保证材料利用率的基础上，减少设备闲置时间，在蒸镀过程中，某些时候会需要调整蒸镀镀率，此时便需要进行降温模式，但在降温模式下，如果一次性关闭加热源，会导致蒸镀镀率发生瞬间变化，后续需要更多时间进行稳定，如果使用缓慢降温模式，也同样面临调整蒸镀镀率时间过久的问题。
本发明提供一种用于蒸镀的加热装置和蒸镀设备，解决现有蒸镀设备加热不均蒸镀材料易喷射、易发生性能劣化，蒸镀镀率调整时不宜稳定的问题。
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。
实施例一
本实施例提供一种用于蒸镀的加热装置，如图2a所示，该加热装置包括：坩埚102，用于盛装蒸镀原料；可移动加热单元13，设置于坩埚102的外部并在垂直于坩埚102的底面的方向上可移动；以及控制器，用于控制可移动加热单元13到坩埚102的底面的高度。需要说明的是，上述的可移动加热单元到坩埚的底面的高度在蒸镀时转换为可移动加热单元到蒸镀材料的高度(或距离)。
在本实施例提供的加热装置中，由于可移动加热单元可在垂直于坩埚的底面的方向上移动，因此，在蒸镀时，蒸镀材料因蒸发而减少，在坩埚内的液位高度随着蒸镀的进行而逐渐下降，此时，通过控制器控制可移动加热单元在垂直于坩埚的底面的方向上移动，可随着蒸镀材料的减少而调整可移动加热装置与蒸镀材料的距离，从而可使蒸镀材料被均匀加热，避免蒸镀材料喷射、发生性能劣化等问题。另外，还可通过控制器控制可移动加热单元在垂直于坩埚的底面的方向上移动调整可移动加热装置与蒸镀材料的距离以调节蒸镀材料的蒸发速率，从而可调整蒸镀镀率。
例如，在本实施例一示例提供的加热装置中，如图2a所示，该加热装置还包括：称重传感装置14，设置于坩埚102的下方，用于称重坩埚102及坩埚102内所述蒸镀原料的重量并输出重量信息。如图2b所示，控制器18分别与称重传感装置14和可移动加热单元13相通信，控制器18接收称重传感装置 14输出的重量信息，并根据重量信息控制可移动加热单元13到坩埚102的底面的高度。在蒸镀时，当称重传感装置14测量的重量减少时，表明蒸镀材料的质量因蒸发而减少，因此，可根据重量信息通过控制器18控制可移动加热单元13到坩埚102的底面的高度，从而实现对蒸镀材料的均匀加热以及调整蒸镀镀率。
例如，在本实施例一示例提供的加热装置中，由于坩埚的底面积和侧壁的倾斜角度是已知的，控制器可根据重量信息(蒸镀材料的重量加坩埚的重量)计算坩埚内蒸镀原料的液位高度，并根据液位高度控制可移动加热单元到坩埚的底面的高度。例如，当坩埚的形状为圆柱体时，其底面积可根据底面积的半径求得，其侧壁的倾斜角度为零度，并且，坩埚的重量也是已知的，可根据蒸镀原料的重量、密度、坩埚的底面积计算出蒸镀原料的液位高度。
例如，在本实施例一示例提供的加热装置中，在蒸镀时，可移动加热单元位于高于蒸镀原料的位置。由此，在蒸镀时，可移动加热单元从上向下加热蒸镀原料，坩锅内蒸镀原料受热均匀，可避免因底部蒸镀原料一直暴露于高热环境中，受热过快造成喷溅或者性能劣化。
例如，在本实施例一示例提供的加热装置中，如图2b所示，控制器18包括处理器181，处理器181用于根据重量信息计算坩埚102内蒸镀原料的液位高度。
例如，在本实施例一示例提供的加热装置中，如图2b所示，控制器18还包括可移动加热单元驱动电路182，可移动加热单元驱动电路182分别与处理器181和可移动加热单元13相连，用于据处理器181计算出的液位高度来控制可移动加热单元13与坩埚102的底面的高度。
实施例二
本实施例提供一种用于蒸镀的加热装置，如图2a所示，该装置包括：坩埚102，用于盛装蒸镀原料；可移动加热单元13，设置于坩埚102的外部且蒸镀时高于蒸镀原料的上方(即，可移动加热单元位于高于蒸镀原料的位置)，也就是说，在进行蒸镀时，可移动加热单元13的位于蒸镀原料的上表面上方；称重传感装置14，设置于坩埚102的下方，用于称重坩埚102及坩埚102内蒸镀原料的重量并输出重量信息；控制器，用于接收称重传感装置14的输出，根据坩埚102及坩埚102内蒸镀原料的重量计算坩埚102内蒸镀原料的液位高度，并根据液位高度控制可移动加热单元13到蒸镀原料的高度，也就是说， 可控制可移动加热单元13到坩埚102底面的高度。
例如，在本实施例一示例提供的加热装置中，如图2b所示，控制器18与称重传感装置14相通信，控制器18与可移动加热单元13相通信并可控制可移动加热单元13移动。需要说明的是，上述的相通信可通过信号线连接的方式来实现或通过无线方式来实现，本公开在此不作限制。
本实施例可移动加热单元13设置于坩埚102的外部，且蒸镀时位于蒸镀原料的上方，从上向下加热蒸镀原料，坩锅10内蒸镀原料受热均匀，可避免因底部蒸镀原料一直暴露于高热环境中，受热过快造成喷溅或者性能劣化。称重传感装置14设置于坩埚102的下方，并与控制器通过信号线相连(或者通过无线通信方式相连)，用于称重坩埚102及坩埚102内蒸镀原料的重量并输出至控制器。称重传感装置14将坩埚102及坩埚102内蒸镀原料的重量转化为电信号输出，用以通过控制器控制移动加热单元13。控制器接收称重传感装置14的输出，根据坩埚102及坩埚102内蒸镀原料的重量计算坩埚102内蒸镀原料的液位高度，然后据此控制可移动加热单元13的位置，调整可移动加热单元13到蒸镀原料的高度，也就是说，可调整可移动加热单元13到坩埚102底面的高度。
在本实施例提供的加热装置中，如图2c所示，在蒸镀时，蒸镀材料因蒸发而减少，在坩埚内的液位高度随着蒸镀的进行而逐渐下降，此时，可通过称重传感装置测量的重量信息来计算蒸镀材料在坩埚内的液位高度；然后，可通过控制器控制可移动加热单元在垂直于坩埚的底面的方向上移动，可随着蒸镀材料的减少而调整可移动加热装置与蒸镀材料的距离，从而可使蒸镀材料被均匀加热，避免蒸镀材料喷射、发生性能劣化等问题。另外，还可通过控制器控制可移动加热单元在垂直于坩埚的底面的方向上移动调整可移动加热装置与蒸镀材料的距离以调节蒸镀材料的蒸发速率，从而可调整蒸镀镀率。
例如，在本实施例一示例提供的加热装置中，称重传感装置可包括半导体压力传感器。当然，本公开包括但不限于此，称重传感装置还可包括其他类型的传感器以实现称重。
值得注意的是，控制器对可移动加热单元到蒸镀原料的高度的控制方案存在多种，本领域技术人员可根据实际情况进行设置。例如，控制器控制可移动加热单元到蒸镀原料的高度，使可移动加热单元到蒸镀原料的高度保持恒定，一方面可以获得稳定的蒸镀镀率，另一方面成膜条件(主要是温度)不会因蒸 镀原料的消耗发生大的变化，制成的薄膜质量更佳。另外一种可选的控制方案是，控制器计算目前坩埚内蒸镀原料的液位高度，并根据输入的蒸镀镀率及目前蒸镀原料的液位高度，计算如果要达到要求的蒸镀镀率，可移动加热单元到蒸镀原料之间需要的高度设置值，然后将该设置值转变为可移动加热单元可识别的指令，传送给移动加热单元。其中，上述计算过程可利用预先输入的数据及公式，本领域技术人员可以根据具体应用情况进行设置，此处不再详细叙述。控制器包括能实现上述控制功能的逻辑器件，具有一定的存储和编程功能，例如单片机。
本实施例提供的加热装置利用质量反馈讯号控制加热单元移动，可以解决长时间蒸镀时坩锅内原料因受热不均可能导致的材料喷溅或者部分材料劣化的问题。另外，通过控制可移动加热单元，可以提高蒸镀材料的加热效率(例如，当蒸镀材料的液位高度下降时，可移动加热单元可随之下降，缩短可移动加热单元与蒸镀材料之间的距离，提高加热效果)，进而达到增加器件产量的效果；还可以更方便调节蒸镀镀率，在需要降温时，达到较快降温速度(例如，通过控制可移动加热单元远离蒸镀材料)，进而减少设备空闲时间，降低生产成本的目的。
例如，在本实施例一示例提供的加热装置中，如图3所示，加热装置100包括坩埚主腔体(坩埚Housing)101和设置在坩埚主腔体101内的坩埚102。可移动加热单元13可包括加热单元133和用于驱动加热单元133远离或靠近蒸镀原料(坩埚102的底面)的驱动机构135。如图3所示，加热单元133例如可为加热丝133，加热丝133贴靠坩埚102的外壁设置；驱动机构135包括：至少两个立柱131，其长度方向垂直于坩埚102的底部；分别设置于立柱131上的两个可移动支架132，加热丝133的两个端部分别固定于两个立柱的可移动支架132上；以及驱动马达134，用于驱动可移动支架132沿立柱131移动。
需要说明的是，本发明实施例包括但不限于此，驱动机构还可为其他驱动结构。另外，立柱131其长度方向垂直于坩埚102的底部，并不严格限定，只要立柱131的设置方向能够使加热丝133沿立柱131移动以靠近或远离坩埚102内的蒸镀原料即可。
例如，在本实施例一示例提供的加热装置中，如图3所示，称重传感装置14设置于坩埚主腔体101内，且位于坩埚102的下方。由此，可避免坩埚102的高温环境或蒸镀材料对称重传感装置14造成损伤或污染。
例如，在本实施例一示例提供的加热装置中，如图3所示，驱动马达134用于驱动可移动支架132沿立柱131移动，图中可移动支架132的外形呈块状，驱动马达134可以直接设置于块状可移动支架132内。
例如，在本实施例一示例提供的加热装置中，加热丝133的数目不限于一条，可以多条并联。
例如，在本实施例一示例提供的加热装置中，如图4所示，坩埚102的外壁为圆柱体，加热丝133可围绕坩埚102的外壁设置，从而实现均匀加热的目的。显然，当坩埚的外壁为其他形状时，加热丝同样可绕坩埚的外壁设置，从而实现均匀加热的目的，本发明实施例在此不再赘述。
以本发明实施例提供的加热装置应用于OLED制造中的有机材料蒸镀为例，加入有机材料的坩埚102放于坩埚主腔体101后，位于坩埚102下方的称重传感装置14将信号传与驱动机构，调整加热单元中加热丝的位置，使得有机材料在不会发生喷溅的情况下加热速率最高。在工作过程中，控制器会依据称重传感装置14反馈的质量变化信号，控制加热丝133进行移动和加热；如此一来，可减少有机材料在高温中暴露的时间，而且可以持续保持蒸镀所需要的蒸镀镀率。
例如，在本实施例一示例提供的加热装置中，如图3所示，该加热装置还可包括：温度传感装置17，用于测量蒸镀原料的温度；温度传感装置17与控制器相连(通过信号线连接或无线连接)，控制器还用于根据蒸镀原料的温度控制可移动加热单元到蒸镀原料的高度。
例如，在本实施例一示例提供的加热装置中，如图3所示，温度传感装置可设置在坩埚内。当然，本发明实施例包括但不限于此，温度传感装置还可设置在坩埚外，例如，通过测量蒸镀材料发射的红外光谱来获取蒸镀材料的温度。
需要说明的是，在蒸镀过程中，某些时候会需要调整蒸镀镀率，因此便需要进行降温模式,在降温模式下，如果一次性关闭加热源，会导致蒸镀镀率瞬间变化，后续需要更多时间进行稳定，如果使用缓慢降温模式，也同样面临调整蒸镀镀率时间过久问题，而本发明的加热装置，一方面通过将加热丝远离蒸镀原料可以立即进行降温，在温度变化过大时，可以立即通过温度信号控制驱动机构移动加热单元，进而增加降温速度，相对的也减少了不必要的有机材料损耗。
在本实施例提供的加热装置中，在坩埚的外部蒸镀原料的上方设置可移动 加热单元，从上部加热蒸镀原料；在坩埚的下方设置称重传感装置，称重传感装置称重坩埚及坩埚内蒸镀原料的重量并输出至控制器，由控制器根据坩埚及坩埚内蒸镀原料的重量计算坩埚内蒸镀原料的液位高度，并根据该液位高度控制上述可移动加热单元到蒸镀原料的高度，进而控制蒸镀原料的受热程度，避局部(主要是底部)一直暴露于高热环境中，受热过快造成喷溅或者性能劣化，在调整蒸镀镀率时，可以直接通过调整控制可移动加热单元到蒸镀原料的高度来实现，不存在蒸镀镀率调整时不宜稳定的问题。
实施例三
本实施例提供一种蒸镀设备，包括上述任一项的加热装置。该蒸镀设备中应用了可移动的加热单元，在不同的工艺阶段，可以上下移动加热单元提高材料升温或降温的时间，提高材料加热效率。称重传感装置通过将材料质量转换成电信号，控制坩埚加热单元移动至适当位置，例如，本发明蒸镀设备可根据坩埚内每段不同的材料损耗量，透过精密称重传感装置测定，反馈至控制加热单元的控制器，使得加热单元移动，进而达到坩锅内材料均匀受热，避免在长时间的加热过程中，有机材料因为受热不均使得一些热敏感性高的有机材料发生劣化现象，或者，因为加热不均匀导致有机材料消耗过程中出现蒸镀镀率波动的现象发生。综上，本发明提供的蒸镀设备，可以使坩埚内蒸镀原料受热均匀，避免蒸镀材料喷射、发生性能劣化等现象，同时便于调整蒸镀镀率。
实施例四
本实施例提供一种蒸镀方法，加热装置包括坩埚；可移动加热单元，设置于坩埚的外部并在垂直于坩埚的底面的方向上可移动；以及控制器，用于控制可移动加热单元到坩埚的底面的高度，蒸镀方法包括步骤401-404。
步骤401：向坩埚加入蒸镀原料。
步骤402：将可移动加热单元设置在高于蒸镀原料的位置。
步骤403：使用可移动加热单元加热并蒸发蒸镀原料。
步骤404：使用控制器控制可移动加热单元在垂直于坩埚的底面的方向上移动。
在本实施例提供的蒸镀方法中，可移动加热单元在蒸镀时位于蒸镀原料的上方，从上向下加热蒸镀原料，坩锅内蒸镀原料受热均匀，可避免因底部蒸镀原料一直暴露于高热环境中，受热过快造成喷溅或者性能劣化。另外，在蒸镀时，蒸镀材料因蒸发而减少，可通过控制器控制可移动加热单元在垂直于坩埚 的底面的方向上移动，可随着蒸镀材料的减少而调整可移动加热装置与蒸镀材料的距离，从而可使蒸镀材料被均匀加热，避免蒸镀材料喷射、发生性能劣化等问题。另外，还可通过控制器控制可移动加热单元在垂直于坩埚的底面的方向上移动调整可移动加热装置与蒸镀材料的距离以调节蒸镀材料的蒸发速率，从而可调整蒸镀镀率。
例如，在本实施例一示例提供的蒸镀方法中，加热装置还包括称重传感装置，设置于坩埚的下方，蒸镀方法包括：使用称重传感装置称量坩埚和坩埚内蒸镀原料的重量并输出重量信息；根据重量信息计算坩埚内蒸镀原料的液位高度；以及使用控制器根据液位高度控制可移动加热单元在垂直于坩埚的底面的方向上移动。由此，随着蒸镀材料在坩埚内的液位高度随着蒸镀的进行而逐渐下降，此时，可通过称重传感装置测量的重量信息来计算蒸镀材料在坩埚内的液位高度；然后，可通过控制器根据液位高度控制可移动加热单元在垂直于坩埚的底面的方向上移动，从而实现对蒸镀材料的均匀加热以及调整蒸镀镀率。
例如，在本实施例一示例提供的蒸镀方法中，使用控制器控制可移动加热单元到蒸镀原料的高度保持恒定。由此，进一步提高对蒸镀材料的加热均匀程度。
例如，在本实施例一示例提供的蒸镀方法中，加热装置还包括温度传感装置，蒸镀方法包括：使用温度传感装置测量蒸镀原料的温度；以及使用控制器根据蒸镀原料的温度控制可移动加热单元到蒸镀原料的高度。由此，可根据蒸镀材料的温度来控制可移动加热单元到蒸镀原料的高度，从而实现对蒸镀材料的均匀加热以及调整蒸镀镀率。
例如，在本实施例一示例提供的蒸镀方法中，当蒸镀原料的温度下降时，使用控制器控制可移动加热单元向接近蒸镀原料的方向移动，从而提高可移动加热单元对蒸镀原料的加热能力。
例如，在本实施例一示例提供的蒸镀方法中，当蒸镀原料的温度上升时，使用控制器控制可移动加热单元向远离蒸镀原料的方向移动，从而降低可移动加热单元对蒸镀原料的加热能力。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求的保护范围为准。
本申请要求于2016年01月05日递交的中国专利申请第201610005830.2号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (20)

  1. 一种用于蒸镀的加热装置，包括：
    坩埚，用于盛装蒸镀原料；
    可移动加热单元，设置于所述坩埚的外部并在垂直于所述坩埚的底面的方向上可移动；以及
    控制器，用于控制所述可移动加热单元到所述坩埚的底面的高度。
  2. 根据权利要求1所述的加热装置，还包括：
    称重传感装置，设置于所述坩埚的下方，用于称重所述坩埚及坩埚内所述蒸镀原料的重量并输出重量信息，
    其中，所述控制器分别与所述称重传感装置和所述可移动加热单元相通信，所述控制器接收所述称重传感装置输出的所述重量信息，并根据所述重量信息控制所述可移动加热单元到所述坩埚的底面的高度。
  3. 根据权利要求2所述的加热装置，其中，所述控制器根据所述重量信息计算所述坩埚内蒸镀原料的液位高度，并根据所述液位高度控制所述可移动加热单元到所述坩埚的底面的高度。
  4. 根据权利要求1-3任一项所述的加热装置，其中，在蒸镀时，所述可移动加热单元位于高于所述蒸镀原料的位置。
  5. 根据权利要求4所述的加热装置，其中，所述控制器包括处理器，所述处理器用于根据所述重量信息计算所述坩埚内蒸镀原料的所述液位高度。
  6. 根据权利要求5所述的加热装置，其中，所述控制器还包括可移动加热单元驱动电路，所述可移动加热单元驱动电路分别与所述处理器和所述可移动加热单元相连，用于据所述处理器计算出的所述液位高度来控制所述可移动加热单元与所述坩埚的底面的高度。
  7. 根据权利要求1-6任一项所述的加热装置，其中，所述可移动加热单元包括：
    加热单元；以及
    驱动机构，所述驱动机构用于驱动所述加热单元远离或靠近所述坩埚的底面。
  8. 根据权利要求7所述的加热装置，其中，所述驱动机构包括：
    至少两个立柱，所述立柱的长度方向垂直于所述坩埚的底面；
    分别设置于所述立柱上的两个可移动支架，所述加热单元的两个端部分别固定于所述两个可移动支架上；以及
    驱动马达，用于驱动所述可移动支架沿所述立柱移动。
  9. 根据权利要求7或8所述的加热装置，其中，所述加热单元包括：
    加热丝，所述加热丝贴靠于所述坩埚的外壁。
  10. 根据权利要求1-9任一项所述的加热装置，其中，所述控制器控制所述可移动加热单元到所述蒸镀原料的高度保持恒定。
  11. 根据权利要求1-10任一项所述的加热装置，还包括：
    温度传感装置，用于测量所述蒸镀原料的温度，
    其中，所述温度传感装置与所述控制器相连，所述控制器还用于根据所述蒸镀原料的温度控制所述可移动加热单元到所述蒸镀原料的高度。
  12. 根据权利要求1-10任一项所述的加热装置，还包括：
    坩埚主腔体，所述坩埚设置于所述坩埚主腔体内，所述称重传感装置设置于所述坩埚主腔体内，且位于所述坩埚的下方。
  13. 根据权利要求2所述的加热装置，所述称重传感装置包括半导体压力传感器。
  14. 一种蒸镀设备，包括权利要求1-13任一项所述的加热装置。
  15. 一种蒸镀方法，包括：
    向坩埚加入蒸镀原料；
    将可移动加热单元设置在高于所述蒸镀原料的位置；
    使用所述可移动加热单元加热并蒸发所述蒸镀原料；以及
    使用控制器控制所述可移动加热单元在垂直于所述坩埚的底面的方向上移动。
  16. 根据权利要求15所述的蒸镀方法，还包括：
    使用称重传感装置称量所述坩埚和所述坩埚内蒸镀原料的重量并输出重量信息；
    根据所述重量信息计算所述坩埚内蒸镀原料的液位高度；以及
    使用所述控制器根据所述液位高度控制所述可移动加热单元在垂直于所述坩埚的底面的方向上移动。
  17. 根据权利要求15或16所述的蒸镀方法，其中，使用所述控制器控制所述可移动加热单元到所述蒸镀原料的高度保持恒定。
  18. 根据权利要求15或16所述的蒸镀方法，还包括：
    使用温度传感装置测量所述蒸镀原料的温度；以及
    使用所述控制器根据所述蒸镀原料的温度控制所述可移动加热单元到所述蒸镀原料的高度。
  19. 根据权利要求18所述的蒸镀方法，其中，当所述蒸镀原料的温度下降时，使用所述控制器控制所述可移动加热单元向接近所述蒸镀原料的方向移动。
  20. 根据权利要求18所述的蒸镀方法，其中，当所述蒸镀原料的温度上升时，使用所述控制器控制所述可移动加热单元向远离所述蒸镀原料的方向移动。
PCT/CN2016/091726 2016-01-05 2016-07-26 用于蒸镀的加热装置、蒸镀设备以及蒸镀方法 Ceased WO2017117978A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/507,516 US10870914B2 (en) 2016-01-05 2016-07-26 Heating device for evaporation, evaporation device and evaporation method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610005830.2 2016-01-05
CN201610005830.2A CN105441878B (zh) 2016-01-05 2016-01-05 用于蒸镀的加热装置和蒸镀设备

Publications (1)

Publication Number Publication Date
WO2017117978A1 true WO2017117978A1 (zh) 2017-07-13

Family

ID=55552501

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/091726 Ceased WO2017117978A1 (zh) 2016-01-05 2016-07-26 用于蒸镀的加热装置、蒸镀设备以及蒸镀方法

Country Status (3)

Country Link
US (1) US10870914B2 (zh)
CN (1) CN105441878B (zh)
WO (1) WO2017117978A1 (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105441878B (zh) * 2016-01-05 2018-12-21 京东方科技集团股份有限公司 用于蒸镀的加热装置和蒸镀设备
CN106847741B (zh) * 2016-12-30 2019-11-22 深圳市华星光电技术有限公司 一种薄膜晶体管阵列基板制造方法、真空气相蒸发台及其控制方法
CN106906445B (zh) * 2017-03-29 2019-02-12 武汉华星光电技术有限公司 一种蒸发源
CN107190236B (zh) * 2017-07-27 2019-06-25 京东方科技集团股份有限公司 坩埚、蒸镀装置及蒸镀方法
CN107236932A (zh) * 2017-08-04 2017-10-10 京东方科技集团股份有限公司 一种坩埚装置及蒸镀设备
CN107805782B (zh) * 2017-11-27 2019-09-20 深圳市华星光电半导体显示技术有限公司 一种蒸镀装置
CN107805783B (zh) * 2017-11-30 2023-12-19 京东方科技集团股份有限公司 蒸发源、蒸镀设备及蒸镀控制方法
JP6967954B2 (ja) 2017-12-05 2021-11-17 東京エレクトロン株式会社 排気装置、処理装置及び排気方法
CN108385077A (zh) * 2018-03-02 2018-08-10 中国计量大学 一种能够实时间接监控膜层厚度的镀膜装置及镀膜方法
CN109468594A (zh) * 2018-12-17 2019-03-15 武汉华星光电半导体显示技术有限公司 用于制作有机发光二极管的蒸镀装置
KR102221960B1 (ko) * 2019-03-25 2021-03-04 엘지전자 주식회사 증착 장치
WO2020244733A1 (en) * 2019-06-03 2020-12-10 Applied Materials, Inc. Evaporator arrangement, deposition system, and evaporation method
CN110257775A (zh) * 2019-06-17 2019-09-20 深圳市华星光电技术有限公司 蒸镀装置及蒸镀方法
CN110865000A (zh) * 2019-12-02 2020-03-06 西安特种设备检验检测院 一种连续测量耐热钢高温腐蚀速率系统及方法
KR102859881B1 (ko) * 2020-11-18 2025-09-12 주식회사 엘지화학 유기발광다이오드의 증착장치
CN114231912A (zh) * 2021-12-30 2022-03-25 武汉天马微电子有限公司 一种蒸镀装置及其控制方法
CN115874150A (zh) * 2022-12-30 2023-03-31 安徽微迈思科技有限公司 一种蒸发镀膜机用蒸发源
CN117286455B (zh) * 2023-09-06 2025-12-30 合肥欣奕华智能机器股份有限公司 一种加热丝高度可调的线性蒸发源装置
CN116988037A (zh) * 2023-09-25 2023-11-03 广州市艾佛光通科技有限公司 蒸发台的基板固定器调节系统、方法及蒸发台

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130160712A1 (en) * 2010-09-01 2013-06-27 Sharp Kabushiki Kaisha Evaporation cell and vacuum deposition system the same
CN203320117U (zh) * 2013-06-27 2013-12-04 四川虹视显示技术有限公司 一种oled有机材料蒸发装置
CN103757590A (zh) * 2013-12-31 2014-04-30 深圳市华星光电技术有限公司 一种镀膜机坩埚设备
CN105112855A (zh) * 2015-09-29 2015-12-02 京东方科技集团股份有限公司 蒸镀坩埚和蒸镀系统
CN105441878A (zh) * 2016-01-05 2016-03-30 京东方科技集团股份有限公司 用于蒸镀的加热装置和蒸镀设备
CN205258591U (zh) * 2016-01-05 2016-05-25 京东方科技集团股份有限公司 用于蒸镀的加热装置和蒸镀设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200527491A (en) * 2003-12-23 2005-08-16 John C Schumacher Exhaust conditioning system for semiconductor reactor
JP2011052301A (ja) * 2009-09-04 2011-03-17 Hitachi Zosen Corp 真空蒸着用蒸着材料の蒸発、昇華方法および真空蒸着用るつぼ装置
CN102023047B (zh) * 2010-09-30 2012-11-14 中国航天科技集团公司第四研究院第四十四研究所 高温蓝宝石称重传感器及其生产方法
CN102808167A (zh) * 2011-06-02 2012-12-05 丽佳达普株式会社 坩埚装置、坩埚装置控制方法、膜厚测量装置及包含它的薄膜沉积设备
JP5936394B2 (ja) * 2012-03-14 2016-06-22 日立造船株式会社 蒸着装置
FR2992976B1 (fr) * 2012-07-04 2014-07-18 Riber Dispositif d'evaporation pour appareil de depot sous vide et appareil de depot sous vide comprenant un tel dispositif d'evaporation
WO2014061150A1 (ja) * 2012-10-19 2014-04-24 三菱重工業株式会社 蒸着材料供給方法、基板製造方法、制御装置および蒸着装置
CN204148591U (zh) * 2014-10-28 2015-02-11 浙江日发航空数字装备有限责任公司 一种螺旋铣孔装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130160712A1 (en) * 2010-09-01 2013-06-27 Sharp Kabushiki Kaisha Evaporation cell and vacuum deposition system the same
CN203320117U (zh) * 2013-06-27 2013-12-04 四川虹视显示技术有限公司 一种oled有机材料蒸发装置
CN103757590A (zh) * 2013-12-31 2014-04-30 深圳市华星光电技术有限公司 一种镀膜机坩埚设备
CN105112855A (zh) * 2015-09-29 2015-12-02 京东方科技集团股份有限公司 蒸镀坩埚和蒸镀系统
CN105441878A (zh) * 2016-01-05 2016-03-30 京东方科技集团股份有限公司 用于蒸镀的加热装置和蒸镀设备
CN205258591U (zh) * 2016-01-05 2016-05-25 京东方科技集团股份有限公司 用于蒸镀的加热装置和蒸镀设备

Also Published As

Publication number Publication date
US10870914B2 (en) 2020-12-22
CN105441878A (zh) 2016-03-30
US20180237904A1 (en) 2018-08-23
CN105441878B (zh) 2018-12-21

Similar Documents

Publication Publication Date Title
WO2017117978A1 (zh) 用于蒸镀的加热装置、蒸镀设备以及蒸镀方法
CN100423184C (zh) 利用动态预测热模型的用于高温斜率应用的晶片温度轨迹控制方法
KR101751624B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
EP3187620B1 (en) Evaporation equipment and evaporation method
KR101754356B1 (ko) 증발원, 증착물질 공급장치, 및 이를 포함하는 증착장치
WO2015100984A1 (zh) 一种镀膜机坩埚设备
US10096499B2 (en) Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system
CN103123906A (zh) 用于处理晶圆的反应装置、静电吸盘和晶圆温度控制方法
CN207525325U (zh) 蒸发源及蒸镀设备
CN107805783A (zh) 蒸发源、蒸镀设备及蒸镀控制方法
US20180306514A1 (en) Adaptive baking method
CN108385077A (zh) 一种能够实时间接监控膜层厚度的镀膜装置及镀膜方法
CN118163504A (zh) 一种喷墨打印蒸发成膜的真空干燥控制方法及真空干燥系统
CN107236932A (zh) 一种坩埚装置及蒸镀设备
CN205258591U (zh) 用于蒸镀的加热装置和蒸镀设备
KR101306986B1 (ko) 박막 형성 장치
WO2017012187A1 (zh) 一种干法刻蚀机台及其使用方法
TWI654325B (zh) Evaporation source device
CN109666899A (zh) 蒸发源的冷却装置、蒸发源装置及蒸镀装置
CN121006607A (zh) 半导体设备的温度控制装置和温度控制方法
JP6931599B2 (ja) 蒸着装置及び蒸着方法
JP2005325425A (ja) 有機蒸着方法及び有機蒸着装置
CN100367458C (zh) 热处理装置和热处理方法
CN103849930B (zh) 一种用于浸渍式碲镉汞液相外延的温度控制装置及方法
KR101261399B1 (ko) 히터시스템의 온도 제어시스템 및 이를 이용한 온도 제어방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15507516

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16883112

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16883112

Country of ref document: EP

Kind code of ref document: A1