WO2017107259A1 - 薄膜晶体管阵列基板 - Google Patents

薄膜晶体管阵列基板 Download PDF

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Publication number
WO2017107259A1
WO2017107259A1 PCT/CN2016/070704 CN2016070704W WO2017107259A1 WO 2017107259 A1 WO2017107259 A1 WO 2017107259A1 CN 2016070704 W CN2016070704 W CN 2016070704W WO 2017107259 A1 WO2017107259 A1 WO 2017107259A1
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Prior art keywords
thin film
film transistor
layer
array substrate
opening
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English (en)
French (fr)
Inventor
赵阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/907,300 priority Critical patent/US20170184891A1/en
Publication of WO2017107259A1 publication Critical patent/WO2017107259A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Definitions

  • the present invention relates to a thin film transistor array substrate, and more particularly to a thin film transistor array substrate having a high aperture ratio and light transmittance.
  • liquid crystal display utilizes the electro-optic effect of the liquid crystal, controls the transmittance and reflectivity of the liquid crystal molecules through the circuit, and controls the intensity of the light transmission color resistance emitted by the backlight module to realize image display of different gray levels and different colors.
  • a liquid crystal display panel includes an array substrate, a color film substrate, and a liquid crystal layer interposed between the array substrate and the color filter substrate.
  • the array substrate is provided with a plurality of thin film transistors as power switches for each pixel, and the position of the liquid crystal molecules of each pixel can be controlled, so that the liquid crystal display panel can display a color picture.
  • the color resist layer of the color filter substrate is further transferred onto the array substrate, that is, the array substrate having the color resist layer (color) Filter on Array (COA) for simplicity to simplify the assembly of liquid crystal display panels.
  • the color resist layer (RGB layer) applied on the COA type array substrate is not a material that is completely transparent, and thus the light intensity passing through is lost, so that the light transmittance is lowered.
  • the color resist layer opening on the array substrate for conducting the transparent electrode and the TFT electrode must be at least 3 micrometers apart from the data line to avoid peeling of the color resist layer, thereby limiting the aperture ratio. .
  • the main object of the present invention is to provide a thin film transistor array substrate having a large color resist opening and utilizing a design in which two thin film transistors share one opening, thereby achieving an increase in aperture ratio, thereby improving light transmission of the thin film transistor array substrate. rate.
  • an embodiment of the present invention provides a thin film transistor array substrate comprising: a thin film transistor layer; a color resist layer disposed on the thin film transistor layer, the color resist layer comprising a plurality of a color resisting unit having a plurality of openings; and a transparent electrode layer electrically connected to the thin film transistor layer through the opening; wherein the plurality of openings comprise a first opening spanning two adjacent color resists unit.
  • a thin film transistor array substrate comprising: a thin film transistor layer; a color resist layer disposed on the thin film transistor layer, the color resist layer comprising a plurality of color resisting units And having a plurality of openings; and a transparent electrode layer electrically connected to the thin film transistor layer through the opening; wherein the plurality of openings comprise a first opening, the first opening is a rectangle having two The long side and the two short sides, wherein the two short sides are respectively disposed in two adjacent color resist units.
  • the thin film transistor layer includes a gate layer and a drain layer.
  • the transparent electrode layer extends into the first opening to electrically connect the color resistive unit to the drain layer.
  • the transparent electrode layer extends into the first opening, and the drain layer is electrically connected to the gate layer through the transparent electrode layer.
  • the first opening has a first sidewall and a second sidewall disposed in two adjacent color resisting units, and connected to each other to form the first An opening.
  • the thin film transistor layer includes a plurality of thin film transistors, wherein the first opening electrically connects at least two of the thin film transistors to the transparent electrode layer.
  • the thin film transistor layer includes a plurality of thin film transistors, wherein the at least two of the thin film transistors are respectively disposed on the two adjacent color resisting units.
  • the present invention mainly provides a thin film transistor array substrate having a large color resist opening and utilizing a design in which two thin film transistors share one opening, thereby achieving an increase in aperture ratio, thereby improving light transmittance of the thin film transistor array substrate.
  • FIG. 1 is a partial top view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of the thin film transistor array substrate taken along line A-A of FIG. 1 according to an embodiment of the present invention.
  • FIG. 1 and FIG. 2 a schematic structural view of a thin film transistor array substrate 100 according to an embodiment of the present invention is disclosed, wherein FIG. 1 shows a top view thereof, and FIG. 2 shows a cross-sectional view taken along line A-A of FIG.
  • the thin film transistor array substrate 100 of the present invention belongs to COA (color Filter on Array type array substrate, that is, a liquid crystal display technology in which a color resist layer is directly formed on an array substrate.
  • the thin film transistor array substrate 100 mainly includes a thin film transistor layer 110; a color resist layer 120; and a transparent electrode layer 130.
  • the color resist layer 120 is disposed on the thin film transistor layer 110 and may include a plurality of color resisting units, such as a red R color resist 121, a green G color resist 122, or a blue B color resist, a yellow Y Color resistance, etc.
  • a red R color resist 121 a green G color resist 122
  • a blue B color resist a yellow Y Color resistance
  • the R color resist 121 and the G color resist 122 will be exemplified as two first and second color resisting units adjacent to each other or adjacent to each other.
  • the thin film transistor layer 110 can form a first thin film transistor 111 , a second thin film transistor 112 , and a third thin film transistor 113 corresponding to each color resisting unit according to requirements.
  • the power-on switch of the color-blocking unit is not limited thereto.
  • the color resist layer 120 is provided with a plurality of openings 123 at different positions.
  • the transparent electrode 130 is electrically connected to the thin film transistor layer 110 through the opening 123.
  • a first opening 1231 is included across two adjacent color resisting units (such as R color resist 121 and G color resist 122).
  • the thin film transistor layer 110 includes a gate layer 1101 , a drain layer 1102 , and an insulating layer 1103 .
  • the transparent electrode layer 130 extends into the first opening 1231, so that the G color resist 122 can be electrically connected to the drain layer 1102, and thus can be opposite to the pixel. power ups.
  • the transparent electrode layer 130 also extends into the first opening 1231, and the drain layer 1102 is electrically connected to the drain layer 1102 through the transparent electrode layer 130.
  • the first opening 1231 has a first sidewall 1231a and a second sidewall 1231b respectively disposed on the R color resist 121 and the G color resist 122, and connected to each other to form the first opening 1231.
  • the first opening 1231 has a rectangular shape and has two long sides and two short sides, wherein the two short sides are respectively disposed on the two adjacent color resisting units, for example, the R The color resistance 121 and the G color resistance 122.
  • the first opening 1231 causes at least two adjacent thin film transistors, for example, the first thin film transistor 111 and the G color resist 122 corresponding to the R color resist 121.
  • the corresponding second thin film transistors 112 can be electrically connected to the transparent conductive layer 130 to form different transparent conductive blocks independently of each other after being patterned.
  • the at least two thin film transistors share the openings but are independently electrically connected to different transparent conductive blocks of the transparent electrode layer, which may increase the The area of the opening increases the overall aperture ratio, thereby increasing the light transmittance of the thin film transistor array substrate.
  • the light transmittance can be improved from 37.5% to at least 40.35%.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种薄膜晶体管阵列基板（100），其包含：一薄膜晶体管层（110）；一色阻层（120），设置于所述薄膜晶体管层（110）上，所述色阻层（120）包含多个色阻单元，且具有多个开口（123）；以及一透明电极层（130），通过所述开口（123）电性连接至所述薄膜晶体管层（110）；其中所述多个开口（123）包含一第一开口（1231）横跨两个相邻的色阻单元。所述薄膜晶体管阵列基板（100）具有较大的色阻开口（123），且利用两个薄膜晶体管共用一个开口（123）的设计，可提升开口率，并改善薄膜晶体管阵列基板（100）的透光率。

Description

薄膜晶体管阵列基板 技术领域
本发明是有关于一种薄膜晶体管阵列基板，特别是有关于一种具有较高开口率及透光率的薄膜晶体管阵列基板。
 背景技术
在现今的各种显示技术中，液晶显示作为一种成熟的技术被广泛接受。液晶显示器（LCD）利用了液晶的电光效应，通过电路控制液晶分子的透射率及反射率，调控背光模块发出的光透过色阻的强度，来实现不同灰阶和不同色彩的图像显示。
一般液晶显示面板包含一阵列基板、一彩膜基板和一液晶层夹设在所述阵列基板和所述彩膜基板之间。所述阵列基板设置多个薄膜晶体管作为每一个像素的电源开关，可控制每一个像素的液晶分子的位置，故可以使所述液晶显示面板显示出彩色画面。在另一种液晶显示面板中，则进一步将彩膜基板的色阻层转移至形成在阵列基板上，也就是成为具有色阻层的阵列基板（color filter on array，简称COA），以简化液晶显示面板的组装。然而，COA型的阵列基板上所涂布的色阻层（RGB层）并非是完全透光的材料，因此会损耗通过的光强度，使其透光率下降。再者，在阵列基板上用来导通透明电极与TFT电极的色阻层开口必须与数据线之间相距至少3微米，以避免色阻层的剥离，故也使开口率提升上有所限制。
故，有必要提供一种薄膜晶体管阵列基板，可提供较高的开口率及透光率，以解决现有技术所存在的问题。
 技术问题
本发明的主要目的在于提供一种薄膜晶体管阵列基板，其具有较大的色阻开口，且利用两个薄膜晶体管共用一个开口的设计，达成开口率的提升，进而改善薄膜晶体管阵列基板的透光率。
 技术解决方案
为达成本发明的前述目的，本发明一实施例提供一种薄膜晶体管阵列基板，其包含：一薄膜晶体管层；一色阻层，设置于所述薄膜晶体管层上，所述色阻层包含多个色阻单元，且具有多个开口；以及一透明电极层，通过所述开口电性连接至所述薄膜晶体管层；其中所述多个开口包含一第一开口横跨两个相邻的色阻单元。
再者，本发明的另一实施例提供一种薄膜晶体管阵列基板，其包含：一薄膜晶体管层；一色阻层，设置于所述薄膜晶体管层上，所述色阻层包含多个色阻单元，且具有多个开口；以及一透明电极层，通过所述开口电性连接至所述薄膜晶体管层；其中所述多个开口包含一第一开口，所述第一开口呈一矩形，具有两个长边和两个短边，其中所述两个短边分别设置于两个相邻的色阻单元中。
在本发明的一实施例中，所述薄膜晶体管层包含一栅极层和一漏极层。
在本发明的一实施例中，所述透明电极层延伸至所述第一开口内，使所述色阻单元电性连接于所述漏极层。
在本发明的一实施例中，所述透明电极层延伸至所述第一开口内，通过所述透明电极层使所述漏极层电性连接于所述栅极层。
在本发明的一实施例中，所述第一开口具有一第一侧壁和一第二侧壁分别设置于相邻的两个所述色阻单元中，并且彼此连接以共同形成所述第一开口。
在本发明的一实施例中，所述薄膜晶体管层包含多个薄膜晶体管，其中所述第一开口使至少两个所述薄膜晶体管各自独立的电性连接于所述透明电极层。
在本发明的一实施例中，所述薄膜晶体管层包含多个薄膜晶体管，其中所述至少两个所述薄膜晶体管分别设置于所述两个相邻的色阻单元。
 有益效果
本发明主要提供一种薄膜晶体管阵列基板，其具有较大的色阻开口，且利用两个薄膜晶体管共用一个开口的设计，达成开口率的提升，进而改善薄膜晶体管阵列基板的透光率。
附图说明
图1是本发明一实施例的薄膜晶体管阵列基板的局部上视图。
图2是本发明一实施例的薄膜晶体管阵列基板沿图1中A-A的剖面图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1及图2所示，其揭示本发明一实施例的薄膜晶体管阵列基板100的结构示意图，其中图1显示其上视图；图2则显示图1中沿A-A的剖面图。本发明的薄膜晶体管阵列基板100属于COA（color filter on array）型的阵列基板，也就是将色阻层直接形成在阵列基板上的一种液晶显示器技术。所述薄膜晶体管阵列基板100主要包含一薄膜晶体管层110；一色阻层120；以及一透明电极层130。所述色阻层120设置于所述薄膜晶体管层110上，可包含多个色阻单元，例如红色的R色阻121、绿色的G色阻122，或蓝色的B色阻、黄色的Y色阻等。下文将以R色阻121及G色阻122作为示例代表两个左右相邻或上下相邻的第一及第二色阻单元。
再者，如图1所示，所述薄膜晶体管层110依照需求对应每个色阻单元可形成一第一薄膜晶体管111、一第二薄膜晶体管112以及一第三薄膜晶体管113，用以作为所述色阻单元的电源导通开关，然不限于此。所述色阻层120设置有不同位置的多个开口123。所述透明电极130通过所述开口123可电性连接至所述薄膜晶体管层110。在所述多个开口123之中，包含一第一开口1231横跨两个相邻的色阻单元(如R色阻121及G色阻122)。
请继续参照图2，所述薄膜晶体管层110包含一栅极层1101、一漏极层1102以及一绝缘层1103。在所述G色阻122的范围内，所述透明电极层130延伸至所述第一开口1231内，使所述G色阻122可以电性连接于所述漏极层1102，因此可对像素通电。此外，在所述R色阻121的范围内，所述透明电极层130亦延伸至所述第一开口1231内，通过所述透明电极层130使所述漏极层1102电性连接于所述栅极层1101。所述第一开口1231具有一第一侧壁1231a和一第二侧壁1231b分别设置于所述R色阻121和所述G色阻122，并且彼此连接以共同形成所述第一开口1231。优选的，所述第一开口1231呈一矩形，且具有两个长边和两个短边，其中所述两个短边分别设置于所述两个相邻的色阻单元，例如所述R色阻121和所述G色阻122。
优选的，如图1所示，所述第一开口1231使至少两个相邻的所述薄膜晶体管，例如所述R色阻121对应的所述第一薄膜晶体管111和所述G色阻122对应的所述第二薄膜晶体管112，两者均可各自独立的电性连接于所述透明电极层130经图案化后已彼此形成独立的不同透明导电区块。
因此，通过两个相邻的色阻单元所共同形成的开口，使至少两个薄膜晶体管共用所述开口但各自独立的与透明电极层的不同透明导电区块形成电性连接，可增加所述开口的面积，提高整体开口率，进而提升所述薄膜晶体管阵列基板的透光率。依照本发明的薄膜晶体管阵列基板，可获得透光率从37.5%提高到至少40.35%。
如上所述，利用增大色阻层开口的面积，并使至少两个薄膜晶体管共用色阻层的同一个开口，可获得较高的开口率，并可以有效改善薄膜晶体管阵列基板的透光率。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。

Claims (13)

  1. 一种薄膜晶体管阵列基板，其包含：
    一薄膜晶体管层；
    一色阻层，设置于所述薄膜晶体管层上，所述色阻层包含多个色阻单元，且具有多个开口；以及
    一透明电极层，通过所述开口电性连接至所述薄膜晶体管层；
    其中所述多个开口包含一第一开口，所述第一开口呈一矩形，且具有两个长边和两个短边，其中所述两个短边分别设置于两个相邻的色阻单元中。
  2. 如权利要求1所述的薄膜晶体管阵列基板，其中所述薄膜晶体管层包含一栅极层和一漏极层。
  3. 如权利要求2所述的薄膜晶体管阵列基板，其中所述透明电极层延伸至所述第一开口内，使所述色阻单元电性连接于所述漏极层。
  4. 如权利要求2所述的薄膜晶体管阵列基板，其中所述透明电极层延伸至所述第一开口内，通过所述透明电极层使所述漏极层电性连接于所述栅极层。
  5. 如权利要求1所述的薄膜晶体管阵列基板，其中所述薄膜晶体管层包含多个薄膜晶体管，其中所述第一开口使至少两个所述薄膜晶体管各自独立的电性连接于所述透明电极层。
  6. 如权利要求5所述的薄膜晶体管阵列基板，其中所述至少两个薄膜晶体管分别设置于所述两个相邻的色阻单元。
  7. 一种薄膜晶体管阵列基板，其包含：
    一薄膜晶体管层；
    一色阻层，设置于所述薄膜晶体管层上，所述色阻层包含多个色阻单元，且具有多个开口；以及
    一透明电极层，通过所述开口电性连接至所述薄膜晶体管层；
    其中所述多个开口包含一第一开口横跨两个相邻的色阻单元。
  8. 如权利要求7所述的薄膜晶体管阵列基板，其中所述薄膜晶体管层包含一栅极层和一漏极层。
  9. 如权利要求8所述的薄膜晶体管阵列基板，其中所述透明电极层延伸至所述第一开口内，使所述色阻单元电性连接于所述漏极层。
  10. 如权利要求8所述的薄膜晶体管阵列基板，其中所述透明电极层延伸至所述第一开口内，通过所述透明电极层使所述漏极层电性连接于所述栅极层。
  11. 如权利要求7所述的薄膜晶体管阵列基板，其中所述第一开口具有一第一侧壁和一第二侧壁分别设置于相邻的两个所述色阻单元中，并且彼此连接以共同形成所述第一开口。
  12. 如权利要求7所述的薄膜晶体管阵列基板，其中所述薄膜晶体管层包含多个薄膜晶体管，其中所述第一开口使至少两个所述薄膜晶体管各自独立的电性连接于所述透明电极层。
  13. 如权利要求12所述的薄膜晶体管阵列基板，其中所述至少两个薄膜晶体管分别设置于所述两个相邻的色阻单元。
PCT/CN2016/070704 2015-12-25 2016-01-12 薄膜晶体管阵列基板 Ceased WO2017107259A1 (zh)

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TWI566023B (zh) * 2016-03-31 2017-01-11 友達光電股份有限公司 主動元件陣列基板
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