WO2017092091A1 - 量子点彩膜基板的制作方法 - Google Patents

量子点彩膜基板的制作方法 Download PDF

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WO2017092091A1
WO2017092091A1 PCT/CN2015/098471 CN2015098471W WO2017092091A1 WO 2017092091 A1 WO2017092091 A1 WO 2017092091A1 CN 2015098471 W CN2015098471 W CN 2015098471W WO 2017092091 A1 WO2017092091 A1 WO 2017092091A1
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quantum dot
layer
color filter
wetting
coating liquid
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French (fr)
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刘国和
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133621—Illuminating devices providing coloured light
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
    • B29D11/00788—Producing optical films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a quantum dot color film substrate.
  • Quantum Dots are usually spherical or spheroidal semiconductor nanoparticles composed of II-VI or III-V elements, and the particle size is generally between several nanometers and several tens of nanometers. Since the particle size of QDs is smaller or closer to the exciton Bohr radius of the corresponding bulk material, a quantum confinement effect is generated, and the energy level structure changes from quasi-continuous of the bulk material to discrete structure of the quantum dot material, resulting in special QDs. The performance of stimulated radiation.
  • the bandgap of the energy level increases, the energy required for the corresponding QDs to be stimulated, and the energy released by the QDs after returning to the ground state are correspondingly increased, which is manifested by the excitation and fluorescence spectra of QDs.
  • the "blue shift" phenomenon by controlling the size of the QDs, allows the luminescence spectrum to cover the entire visible region. For example, the size of cadmium selenide (CdSe) is reduced from 6.6 nm to 2.0 nm, and its emission wavelength is "blue shifted" from the red light region 635 nm to 460 nm in the blue light region.
  • the quantum dot material has the advantages of concentrated luminescence spectrum, high color purity, and easy adjustment of the luminescent color by the size, structure or composition of the quantum dot material, and the use of these advantages in the display device can effectively enhance the color of the display device. Domain and color reproduction capabilities.
  • the patent CN 102944943A and the patent US20150002788A1 both propose a technical solution for replacing the color filter with a quantum dot layer having a pattern structure for color display purposes, but the patents do not graphically map the quantum dot layer. The method is explained.
  • Patent CN103226260A provides a method for dispersing quantum dots in a photoresist to pattern a quantum dot layer by a photolithography process, but the quantum dots are dispersed in the photoresist due to an initiator in the photoresist.
  • Various polymer materials such as polymer monomers, polymers, additives, etc.
  • the surface chemical environment of quantum dots is complex, which has a great influence on the luminous efficiency of quantum dots.
  • quantum dot patterns can also be produced by transfer, screen printing, etc., but the resolution of the quantum dot pattern obtained by the transfer method is not high, the edges of the pattern are jagged, and the quantum dot layer and the substrate are Adhesive force needs to be improved; and the method of inkjet printing to form a patterned quantum dot layer is very demanding on inkjet printing equipment. There are still technical barriers to ensuring the stability and printing accuracy of inkjet ink droplets, and mass production is still not possible.
  • An object of the present invention is to provide a method for fabricating a quantum dot color film substrate, which is characterized in that the wettability of the photocatalyst-containing wettability change layer is improved by ultraviolet light to form a high-definition quantum dot pattern.
  • the production process is simple, and the quantum dot layer pattern has high precision.
  • the present invention provides a method for fabricating a quantum dot color film substrate, comprising the following steps:
  • Step 1 Providing a color filter substrate, the color film substrate comprising a base substrate, a black matrix on the base substrate, and a color filter layer, wherein the color filter layer comprises a red color resist layer and a green color resist a layer, and a transparent photoresist layer;
  • Step 2 providing a wetting change agent, the wetting change agent comprising the following components: a photocatalyst, an organopolysiloxane, and a solvent; coating a layer of wetting on the black matrix and the color filter layer a change agent, and then vacuum drying the layer wettability modifier to remove the solvent therein to obtain a wet change layer;
  • Step 3 providing a photomask, and performing ultraviolet light exposure processing on the wetness changing layer by using the photomask, wherein a portion of the photomask corresponding to the red color resist layer and the green color resist layer is transparent
  • the first portion of the red color resist layer and the green color resist layer corresponding to the red color resist layer is irradiated with ultraviolet light in this step, and a reaction occurs therein to improve wettability.
  • the portion corresponding to the transparent photoresist layer is an opaque portion, and the second portion of the wet-change layer corresponding to the transparent photoresist layer is not irradiated with ultraviolet light in this step, and the wettability thereof is not changed. ;
  • Step 4 coating a layer of quantum dot coating solution on the wetness changing layer, the quantum dot coating liquid comprising the following components: quantum dots, quantum dot ligands coordinated to the surface of the quantum dots, and a solvent And an additive; since the wettability of the first portion of the wetting change layer is improved by ultraviolet light treatment, in contrast, the wettability of the first portion of the wet change layer is better than that of the second portion, and the quantum dot coating
  • the cloth liquid has a large wetting angle on the surface of the second portion of the wetting change layer and does not wet well, and the quantum dot coating liquid can be well surfaced on the surface of the first portion of the wetting change layer. Wetting, the quantum dot coating solution does not stay on the second portion of the wetting change layer under the combined action of gravity, but is distributed on the first portion of the wetting change layer, thereby forming Quantum dot pattern
  • Step 5 heat-treating the quantum dot coating liquid forming the quantum dot pattern, and solidifying it to obtain a patterned quantum dot layer;
  • Step 6 Form a transparent conductive layer on the quantum dot layer; and further complete fabrication of the quantum dot color film substrate.
  • the photocatalyst is TiO 2 , ZnO, or SnO 2 , and the photocatalyst has a particle diameter of 10 to 50 nm.
  • the organopolysiloxane is a fluorine-containing alkyl group polysiloxane.
  • the solvent is methanol, ethanol, isopropanol, acetone, ethylene glycol dimethyl ether, ethylene glycol monoethyl ether, methyl acetate, ethyl acetate, butyl acetate, toluene, two A combination of one or more of toluene.
  • the quantum dot is a core-shell structure, and the material of the quantum dot is selected from the group consisting of a group II-VI semiconductor material, a group III-V semiconductor material, and a group IV-VI nano semiconductor material.
  • the quantum dots In the quantum dot coating liquid, the quantum dots have a particle diameter of between 1 and 10 nm.
  • the quantum dot ligand is tri-n-octylphosphine or tri-n-octylphosphine oxide.
  • the solvent is a combination of one or more of xylene, toluene, cyclohexylbenzene, trimethylbenzene, pyridine, pyrrole, hexane, pentane, and cyclohexane.
  • the quantum dots include red quantum dots that emit red light and green light, respectively, and green quantum dots.
  • the quantum dot color film substrate obtained in the step 6 is used in a display device whose backlight is blue light.
  • the invention also provides a method for manufacturing a quantum dot color film substrate, comprising the following steps:
  • Step 1 Providing a color filter substrate, the color film substrate comprising a base substrate, a black matrix on the base substrate, and a color filter layer, wherein the color filter layer comprises a red color resist layer and a green color resist a layer, and a transparent photoresist layer;
  • Step 2 providing a wetting change agent, the wetting change agent comprising the following components: a photocatalyst, an organopolysiloxane, and a solvent; coating a layer of wetting on the black matrix and the color filter layer a change agent, and then vacuum drying the layer wettability modifier to remove the solvent therein to obtain a wet change layer;
  • Step 3 providing a photomask, and performing ultraviolet light exposure processing on the wetness changing layer by using the photomask, wherein a portion of the photomask corresponding to the red color resist layer and the green color resist layer is transparent
  • the first portion of the red color resist layer and the green color resist layer corresponding to the red color resist layer is irradiated with ultraviolet light in this step, and a reaction occurs therein to improve wettability.
  • the portion corresponding to the transparent photoresist layer is an opaque portion, and the second portion of the wet-change layer corresponding to the transparent photoresist layer is not irradiated with ultraviolet light in this step, and the wettability thereof is not changed. ;
  • Step 4 coating a layer of quantum dot coating solution on the wetness changing layer, the quantum dot coating liquid comprising the following components: quantum dots, quantum dot ligands coordinated to the surface of the quantum dots, and a solvent And an additive; since the wettability of the first portion of the wetting change layer is improved by ultraviolet light treatment, in contrast, the wettability of the first portion of the wet change layer is better than that of the second portion, and the quantum dot coating
  • the cloth liquid has a large wetting angle on the surface of the second portion of the wetting change layer.
  • Step 5 heat-treating the quantum dot coating liquid forming the quantum dot pattern, and solidifying it to obtain a patterned quantum dot layer;
  • Step 6 forming a transparent conductive layer on the quantum dot layer; further completing the fabrication of the quantum dot color film substrate;
  • the photocatalyst is TiO 2 , ZnO, or SnO 2 , and the photocatalyst has a particle diameter of 10 to 50 nm;
  • the organopolysiloxane is a fluorine-containing alkyl polysiloxane
  • the solvent is methanol, ethanol, isopropanol, acetone, ethylene glycol dimethyl ether, ethylene glycol monoethyl ether, methyl acetate, ethyl acetate, butyl acetate, toluene a combination of one or more of xylene;
  • the quantum dot color film substrate obtained in the step 6 is used in a display device whose backlight is blue light.
  • a method for fabricating a quantum dot color film substrate wherein a wettability property of a photocatalyst-containing wettability change layer is improved by ultraviolet light, and a high definition is formed.
  • the quantum dot pattern simplifies the quantum dot pattern production process and improves the precision of the quantum dot pattern, the fabrication process is simple, and the waste of the quantum dot material is reduced, and the cost is saved, and the obtained quantum dot color film substrate can effectively improve the display.
  • the color saturation and color gamut of the device enhance the color performance of the display panel.
  • FIG. 1 is a schematic flow chart of a method for fabricating a quantum dot color film substrate of the present invention
  • FIG. 2 is a schematic view showing the second step of the method for fabricating the quantum dot color film substrate of the present invention
  • FIG. 3 is a schematic view showing a step 3 of a method for fabricating a quantum dot color film substrate of the present invention
  • FIG. 4 is a schematic view showing a step 4 of a method for fabricating a quantum dot color film substrate of the present invention
  • FIG. 5 is a schematic view showing a step 5 of a method for fabricating a quantum dot color film substrate of the present invention
  • FIG. 6 is a schematic view showing a step 6 of a method for fabricating a quantum dot color film substrate of the present invention
  • Fig. 7 is a schematic view showing a quantum dot color film substrate produced by the present invention for color display in a display device.
  • the present invention provides a method for fabricating a quantum dot color film substrate, comprising the following steps:
  • Step 1 providing a color filter substrate, the color film substrate comprising a base substrate 11 , a black matrix 12 on the base substrate 11 , and a color filter layer 13 , wherein the color filter layer 13 includes a red color resist a layer 131, a green color resist layer 132, and a transparent photoresist layer 133;
  • the base substrate 11 is a glass substrate.
  • Step 2 providing a wetting change agent, the wetting change agent comprising the following components: a photocatalyst, an organopolysiloxane, and a solvent; as shown in FIG. 2, in the black matrix 12, and a color filter layer 13 is coated with a layer of wettability modifier, and then vacuum drying of the layer of wettability modifier to remove the solvent therein, to obtain a wetness change layer 14;
  • the photocatalyst is selected from TiO 2 , ZnO, SnO 2 , or other photocatalysts, and the particle diameter thereof is preferably 10 to 50 nm; and the organopolysiloxane is preferably fluorine-containing.
  • the solvent can be used in methanol, ethanol, isopropanol, acetone, One or more selected from the group consisting of ethylene glycol dimethyl ether, ethylene glycol monoethyl ether, methyl acetate, ethyl acetate, butyl acetate, toluene, and xylene.
  • Step 3 as shown in FIG. 3, a photomask 50 is provided, and the wetness change layer 14 is subjected to ultraviolet light exposure processing by the photomask 50, wherein the photomask 50 corresponds to the red color resist layer 131.
  • the portion of the green color resist layer 132 is a light transmissive portion, and the first portion 141 of the wet color change layer 14 corresponding to the red color resist layer 131 and the green color resist layer 132 is irradiated with ultraviolet light in this step.
  • a reaction occurs to improve the wettability, and a portion 52 of the photomask 50 corresponding to the transparent photoresist layer 133 is a portion that is opaque, and the wetness change layer 14 corresponds to the transparent photoresist layer 133.
  • the second portion 142 is not exposed to ultraviolet light in this step, and its wettability is not changed;
  • the first portion 141 of the wetting change layer 14 is reacted by ultraviolet light in this step, and the wettability is improved: the first portion 141 of the wettability variable layer 14
  • the photocatalyst generates electron-hole pairs under the irradiation of ultraviolet light, and these electron-hole pairs react with surrounding substances to form active oxygen species such as superoxide radicals or hydroxyl radicals, and these reactive oxygen species interact with polysiloxanes.
  • the wettability is improved, and the wettability of the first portion 141 of the wettability variable layer 14 is improved.
  • the quantum dot coating liquid comprises the following components: quantum dots having a quantum dot ligand coordinated to a surface, a solvent, and an additive; since the wettability of the first portion 141 of the wetting change layer 14 is treated by ultraviolet light Increasingly, in contrast, the first portion 141 of the wetting change layer 14 is more wettable than the second portion 142, and the quantum dot coating liquid has a large surface on the surface of the second portion 142 of the wetting change layer 14.
  • the wetting angle does not wet well, and the quantum dot coating liquid is well wetted on the surface of the first portion 141 of the wetting change layer 14, and the quantum dot coating is performed under the combined action of gravity.
  • the liquid does not stay on the second portion 142 of the wetting change layer 14, but is distributed over the first portion 141 of the wetting change layer 14, thereby forming a quantum dot pattern;
  • the solvent is mainly composed of one or more of a solvent such as xylene, toluene, cyclohexylbenzene, trimethylbenzene, pyridine, pyrrole, hexane, pentane or cyclohexane.
  • Quantum dots are mainly composed of II-VI semiconductor materials (such as: CdS, CdSe, HgTe, ZnS, ZnSe, ZnTe, HgS, etc.), III-V semiconductor materials (such as: InP, InAs, GaP, GaAs, etc.) or IV.
  • Quantum dots of a core-shell structure composed of a VI-type nano-semiconductor material the particle size of the above-mentioned quantum dots is most preferably between 1-10 nm; quantum dot ligands may select a commonly used quantum dot ligand such as tri-n-octylphosphine (TOP) ), one of tri-n-octylphosphine oxide (TOPO) and the like.
  • TOP tri-n-octylphosphine
  • TOPO tri-n-octylphosphine oxide
  • Step 5 as shown in FIG. 5, the quantum dot coating liquid forming the quantum dot pattern is heat-treated and solidified to obtain a patterned quantum dot layer 15;
  • Step 6 as shown in FIG. 6, a transparent conductive layer 16 is formed on the quantum dot layer 15; and further, the fabrication of the quantum dot color filter substrate 10 is completed.
  • a TFT substrate 20 is provided, and an upper polarizer 41 and a lower polarizer 42 are respectively disposed on the quantum dot color filter substrate 10 and the TFT substrate 20; and a quantum dot display panel can be obtained through a liquid crystal forming process;
  • the schematic diagram of the quantum dot display panel is as shown in FIG. 7 , and includes a quantum dot color filter substrate 10 , a TFT substrate 20 disposed opposite to the quantum dot color filter substrate 10 , and a quantum dot color filter substrate.
  • the sheet 41 is a built-in polarizer such as a dye-based polarizer, and the upper polarizer 41 is disposed on a side of the quantum dot color film substrate 10 facing the TFT substrate 20; the lower polarizer 42 is used.
  • the lower polarizer is disposed on a side of the TFT substrate 20 facing or away from the quantum dot color filter substrate 10; a polarization direction of the lower polarizer 42 and a polarization of the upper polarizer 41 The direction is vertical.
  • the quantum dots include red quantum dots and green quantum dots respectively emitting red light and green light, that is, the formed quantum dot layer 14 includes red quantum dots and green quantum dots.
  • the quantum dot color film substrate 10 obtained in the step 6 is used in a display device whose backlight is blue light, as shown in FIG. 7, the display panel including the quantum dot color film substrate 10 is used for backlighting blue.
  • the backlight module 2 When displayed in a light display device, the backlight module 2 emits a blue backlight. Under the excitation of the blue backlight, the quantum dot layer 14 mixed with red and green quantum dots emits red and green mixed light having a narrow width at half maximum.
  • the mixed light is then filtered through the red color resist layer 131 and the green color resist layer 132 to be respectively filtered into high-purity red and green monochromatic lights to respectively display red and green colors; and the position of the corresponding transparent photoresist layer 133 is not due to the quantum dots.
  • the layer covers and directly passes through the blue backlight to display blue; finally, the three primary colors of red, green and blue required for color display are provided, color display is realized, and the display color gamut index can be effectively improved, and the quantum dot layer 14 is The blue quantum dot material is not included, and the combination of the blue backlight and the transparent photoresist layer reduces the material cost while improving the light utilization efficiency.
  • the present invention provides a method for fabricating a quantum dot color film substrate, which is characterized in that the wettability of the photocatalyst-containing wettability change layer is improved by ultraviolet light, thereby forming a high-definition
  • the quantum dot pattern simplifies the quantum dot pattern manufacturing process and improves the precision of the quantum dot pattern, the manufacturing process is simple, the waste of the quantum dot material is reduced, and the cost is saved, and the obtained quantum dot color film substrate can effectively improve the display device.
  • the color saturation and color gamut enhance the color performance of the display panel.

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Abstract

一种量子点彩膜基板的制作方法，借由含光催化剂的润湿性变化层（14）经紫外光照射后其润湿性会变好的特点，形成高精细的量子点图形，简化量子点图形制作工艺的同时提升了量子点图形的精度，制作工艺简单，且减少了量子点材料的浪费，节约成本，所制得的量子点彩膜基板可有效提升显示装置的色饱和度与色域，增强显示面板的色彩表现能力。

Description

量子点彩膜基板的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点彩膜基板的制作方法。
背景技术
随着显示技术的不断发展，人们对显示装置的显示质量要求也越来越高。量子点(Quantum Dots，简称QDs)通常是由Ⅱ-Ⅵ、或Ⅲ-Ⅴ族元素组成的球形或类球形的半导体纳米微粒，粒径一般在几纳米至数十纳米之间。由于QDs的粒径尺寸小于或者接近相应体材料的激子波尔半径，会产生量子限域效应，其能级结构从体材料的准连续变为量子点材料的离散结构，导致QDs展示出特殊的受激辐射发光的性能。随着QDs的尺寸减小，其能级带隙增加，相应的QDs受激所需要的能量以及QDs受激后回到基态放出的能量都相应的增大，表现为QDs的激发与荧光光谱的“蓝移”现象，通过控制QDs的尺寸，使其发光光谱可以覆盖整个可见光区域。如硒化镉(CdSe)的尺寸从6.6nm减小至2.0nm，其发光波长从红光区域635nm“蓝移”至蓝光区域的460nm。
量子点材料具有发光光谱集中，色纯度高、且发光颜色可通过量子点材料的尺寸、结构或成分进行简易调节等优点，利用这些优点将其应用在显示装置中可有效地提升显示装置的色域及色彩还原能力。如专利CN 102944943A、及专利US20150002788A1均提出了用具有图案结构的量子点层替代彩色滤光膜(Color Filter)以达到彩色显示目的的技术方案，但是该些专利并未对量子点层图形化的方法进行说明。
专利CN103226260A提供了一种把量子点分散于光刻胶中，通过光刻工艺图形化量子点层的方法，但量子点分散于光刻胶中，由于光刻胶中具有起始剂(initiation)、聚合物单体(monomer)、聚合物(polymer)、添加剂(additive)等多种高分子材料，量子点的表面化学环境复杂，对量子点的发光效率影响很大。除上述方法以外，还可以通过转印、网印等方法来制作量子点图形，但是转印的方法所得到的量子点图形分辨率不高，图形边缘呈现锯齿状，并且量子点层与基体的黏着力有待提高；而喷墨打印形成图形化量子点层的方法对喷墨打印设备要求很高，如何保证喷墨墨滴的稳定性及打印精度仍有技术壁垒，仍不能大规模生产。
发明内容
本发明的目的在于提供一种量子点彩膜基板的制作方法，借由含光催化剂的润湿性变化层经紫外光照射后其润湿性会变好的特点，形成高精细的量子点图形，制作工艺简单、量子点层图形精度高。
为实现上述目的，本发明提供了量子点彩膜基板的制作方法，包括如下步骤：
步骤1、提供彩膜基板，所述彩膜基板包括衬底基板、位于所述衬底基板上的黑色矩阵、及彩色滤光层，所述彩色滤光层包括红色色阻层、绿色色阻层、及透明光阻层；
步骤2、提供润湿变化剂，所述润湿变化剂包括以下组分：光催化剂、有机聚硅氧烷、及溶剂；在所述黑色矩阵、及彩色滤光层上涂布一层润湿性变化剂，并随后对该层润湿性变化剂做真空干燥处理，以去除其中的溶剂，得到润湿变化层；
步骤3、提供光罩，利用所述光罩对所述润湿变化层做紫外光曝光处理，其中，所述光罩上对应所述红色色阻层、绿色色阻层的部分为透光的部分，所述润湿变化层对应所述红色色阻层、绿色色阻层的第一部分在该步骤中受到紫外光照射，其内发生反应，使其润湿性得到改善，所述光罩上对应所述透明光阻层的部分为不透光的部分，所述润湿变化层对应所述透明光阻层的第二部分在该步骤中未受到紫外光照射，其润湿性没有发生改变；
步骤4、在所述润湿变化层上涂布一层量子点涂布液，所述量子点涂布液包括以下组分：量子点、与量子点表面进行配位的量子点配体、溶剂、及添加剂；由于所述润湿变化层的第一部分经紫外光处理后润湿性得以提高，相对的，所述润湿变化层的第一部分比第二部分的润湿性好，量子点涂布液在所述润湿变化层的第二部分的表面具有很大的润湿角无法很好地润湿，而量子点涂布液在所述润湿变化层的第一部分的表面能够很好地润湿，在重力的综合作用下该层量子点涂布液不会停留在所述润湿变化层的第二部分上，而会分布在所述润湿变化层的第一部分上，从而形成量子点图形；
步骤5、对形成量子点图形的量子点涂布液进行加热处理，使其固化，得到图形化的量子点层；
步骤6、在所述量子点层上形成透明导电层；进而完成量子点彩膜基板的制作。
所述润湿变化剂中，所述光催化剂为TiO2、ZnO、或SnO2，所述光催 化剂的粒径为10-50nm。
所述润湿变化剂中，所述有机聚硅氧烷为含氟烷基的聚硅氧烷。
所述润湿变化剂中，所述溶剂为甲醇、乙醇、异丙醇、丙酮、乙二醇二甲醚、乙二醇单乙醚、醋酸甲酯、醋酸乙酯、醋酸丁酯、甲苯、二甲苯中的一种或多种的组合。
所述量子点涂布液中，所述量子点为核壳结构，所述量子点的材料选自Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、和Ⅳ-Ⅵ族纳米半导体材料。
所述量子点涂布液中，所述量子点的粒径为1-10nm之间。
所述量子点涂布液中，所述量子点配体为三正辛基膦、或三正辛基氧化膦。
所述量子点涂布液中，所述溶剂为二甲苯、甲苯、环己基苯、三甲苯、吡啶、吡咯、己烷、戊烷、环己烷中的一种或多种的组合。
所述量子点涂布液中，所述量子点包括分别发红光、绿光的红色量子点、与绿色量子点。
所述步骤6中所得到的量子点彩膜基板用于背光为蓝光的显示装置中。
本发明还提供一种量子点彩膜基板的制作方法，包括如下步骤：
步骤1、提供彩膜基板，所述彩膜基板包括衬底基板、位于所述衬底基板上的黑色矩阵、及彩色滤光层，所述彩色滤光层包括红色色阻层、绿色色阻层、及透明光阻层；
步骤2、提供润湿变化剂，所述润湿变化剂包括以下组分：光催化剂、有机聚硅氧烷、及溶剂；在所述黑色矩阵、及彩色滤光层上涂布一层润湿性变化剂，并随后对该层润湿性变化剂做真空干燥处理，以去除其中的溶剂，得到润湿变化层；
步骤3、提供光罩，利用所述光罩对所述润湿变化层做紫外光曝光处理，其中，所述光罩上对应所述红色色阻层、绿色色阻层的部分为透光的部分，所述润湿变化层对应所述红色色阻层、绿色色阻层的第一部分在该步骤中受到紫外光照射，其内发生反应，使其润湿性得到改善，所述光罩上对应所述透明光阻层的部分为不透光的部分，所述润湿变化层对应所述透明光阻层的第二部分在该步骤中未受到紫外光照射，其润湿性没有发生改变；
步骤4、在所述润湿变化层上涂布一层量子点涂布液，所述量子点涂布液包括以下组分：量子点、与量子点表面进行配位的量子点配体、溶剂、及添加剂；由于所述润湿变化层的第一部分经紫外光处理后润湿性得以提高，相对的，所述润湿变化层的第一部分比第二部分的润湿性好，量子点涂布液在所述润湿变化层的第二部分的表面具有很大的润湿角无法很好地 润湿，而量子点涂布液在所述润湿变化层的第一部分的表面能够很好地润湿，在重力作用下该层量子点涂布液不会停留在所述润湿变化层的第二部分上，而会分布在所述润湿变化层的第一部分上，从而形成量子点图形；
步骤5、对形成量子点图形的量子点涂布液进行加热处理，使其固化，得到图形化的量子点层；
步骤6、在所述量子点层上形成透明导电层；进而完成量子点彩膜基板的制作；
其中，所述润湿变化剂中，所述光催化剂为TiO2、ZnO、或SnO2，所述光催化剂的粒径为10-50nm；
其中，所述润湿变化剂中，所述有机聚硅氧烷为含氟烷基的聚硅氧烷；
其中，所述润湿变化剂中，所述溶剂为甲醇、乙醇、异丙醇、丙酮、乙二醇二甲醚、乙二醇单乙醚、醋酸甲酯、醋酸乙酯、醋酸丁酯、甲苯、二甲苯中的一种或多种的组合；
其中，所述步骤6中所得到的量子点彩膜基板用于背光为蓝光的显示装置中。
本发明的有益效果：本发明提供了一种量子点彩膜基板的制作方法，借由含光催化剂的润湿性变化层经紫外光照射后其润湿性会变好的特点，形成高精细的量子点图形，简化量子点图形制作工艺的同时提升了量子点图形的精度，制作工艺简单，且减少了量子点材料的浪费，节约成本，所制得的量子点彩膜基板可有效提升显示装置的色饱和度与色域，增强显示面板的色彩表现能力。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的量子点彩膜基板的制作方法的流程示意图；
图2为本发明的量子点彩膜基板的制作方法的步骤2的示意图；
图3为本发明的量子点彩膜基板的制作方法的步骤3的示意图；
图4为本发明的量子点彩膜基板的制作方法的步骤4的示意图；
图5为本发明的量子点彩膜基板的制作方法的步骤5的示意图；
图6为本发明的量子点彩膜基板的制作方法的步骤6的示意图；
图7为本发明制得的量子点彩膜基板用于显示装置中进行彩色显示的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种量子点彩膜基板的制作方法，包括如下步骤：
步骤1、提供彩膜基板，所述彩膜基板包括衬底基板11、位于所述衬底基板11上的黑色矩阵12、及彩色滤光层13，所述彩色滤光层13包括红色色阻层131、绿色色阻层132、及透明光阻层133；
具体的，所述衬底基板11为玻璃基板。
步骤2、提供润湿变化剂，所述润湿变化剂包括以下组分：光催化剂、有机聚硅氧烷、及溶剂；如图2所示，在所述黑色矩阵12、及彩色滤光层13上涂布一层润湿性变化剂，并随后对该层润湿性变化剂做真空干燥处理，以去除其中的溶剂，得到润湿变化层14；
具体的，所述润湿变化剂中，所述光催化剂选用TiO2、ZnO、SnO2、或其他等光催化剂，其粒径优选为10-50nm；所述有机聚硅氧烷优选为含氟烷基的聚硅氧烷，此类聚硅氧烷具有很低的表面能，可有效提升润湿性变化层14的抗液性；所述溶剂可在甲醇、乙醇、异丙醇、丙酮、乙二醇二甲醚、乙二醇单乙醚、醋酸甲酯、醋酸乙酯、醋酸丁酯、甲苯、二甲苯等中选择一种或多种混合使用。
步骤3、如图3所示，提供光罩50，利用所述光罩50对所述润湿变化层14做紫外光曝光处理，其中，所述光罩50上对应所述红色色阻层131、绿色色阻层132的部分为透光的部分，所述润湿变化层14对应所述红色色阻层131、绿色色阻层132的第一部分141在该步骤中受到紫外光照射，其内发生反应，使其润湿性得到改善，所述光罩50上对应所述透明光阻层133的部分52为不透光的部分，所述润湿变化层14对应所述透明光阻层133的第二部分142在该步骤中未受到紫外光照射，其润湿性没有发生改变；
具体的，所述润湿变化层14的第一部分141在该步骤中受到紫外光照射其内发生反应，使其润湿性得到改善的原理为：润湿性变化层14的第一部分141中的光催化剂在紫外光的照射下产生电子-空穴对，这些电子-空穴对与周边物质发生反应生成超氧化自由基或羟基自由基等活性氧种，这些活性氧种与聚硅氧烷作用使其润湿性得到改善，进而使润湿性变化层14的第一部分141的润湿性得到改善。
步骤4、如图4所示，在所述润湿变化层14上涂布一层量子点涂布液， 所述量子点涂布液包括以下组分：表面配位有量子点配体的量子点、溶剂、及添加剂；由于所述润湿变化层14的第一部分141经紫外光处理后润湿性得以提高，相对的，所述润湿变化层14的第一部分141比第二部分142的润湿性好，量子点涂布液在所述润湿变化层14的第二部分142的表面具有很大的润湿角无法很好地润湿，而量子点涂布液在所述润湿变化层14的第一部分141的表面能够很好地润湿，在重力的综合作用下该层量子点涂布液不会停留在所述润湿变化层14的第二部分142上，而会分布在所述润湿变化层14的第一部分141上，从而形成量子点图形；
具体的，所述量子点涂布液中，溶剂主要由二甲苯、甲苯、环己基苯、三甲苯、吡啶、吡咯、己烷、戊烷、环己烷等溶剂中的一种或多种组成；量子点主要由Ⅱ-Ⅵ族半导体材料(如：CdS、CdSe、HgTe、ZnS、ZnSe、ZnTe、HgS等)、Ⅲ-Ⅴ族半导体材料(如：InP、InAs、GaP、GaAs等)或Ⅳ-Ⅵ族纳米半导体材料组成的核壳结构的量子点，上述量子点的粒径最优选在1-10nm之间；量子点配体可选择常用的量子点配体如三正辛基膦(TOP)、三正辛基氧化膦(TOPO)等中的一种。
步骤5、如图5所示，对形成量子点图形的量子点涂布液进行加热处理，使其固化，得到图形化的量子点层15；
步骤6、如图6所示，在所述量子点层15上形成透明导电层16；进而完成量子点彩膜基板10的制作。
具体的，提供TFT基板20，在所述量子点彩膜基板10与TFT基板20上分别设置上偏光片41与下偏光片42；并经过液晶成盒制程后可得到量子点显示面板；具体的，所述量子点显示面板的结构简图如图7所示，包括量子点彩膜基板10、与所述量子点彩膜基板10相对设置的TFT基板20、密封于所述量子点彩膜基板10与TFT基板20之间的液晶层30、位于所述量子点彩膜基板10一侧的上偏光片41、及位于所述TFT基板20一侧的下偏光片42；其中，所述上偏光片41采用内置式的偏光片，如染料系偏光片等，所述上偏光片41设置于所述量子点彩膜基板10面对所述TFT基板20的一侧；所述下偏光片42采用内置式或外置式，所述下偏光片设置于所述TFT基板20面对或远离所述量子点彩膜基板10的一侧；所述下偏光片42的偏振方向与上偏光片41的偏振方向垂直。
具体的，所述量子点涂布液中，所述量子点包括分别发红光、绿光的红色量子点与绿色量子点，即所形成的量子点层14中包含红色量子点与绿色量子点；所述步骤6中所得到的量子点彩膜基板10用于背光为蓝光的显示装置中，如图7所示，包括量子点彩膜基板10的显示面板用于背光为蓝 光的显示装置中进行显示时，背光模组2发出蓝光背光，在蓝色背光的激发下，混有红色与绿色量子点的量子点层14会发出半高宽很窄的红、绿混合光，该混合光随后经过红色色阻层131、绿色色阻层132后分别被滤成高纯度的红色与绿色单色光而分别显红色、绿色；而对应透明光阻层133位置由于没有量子点层覆盖而直接透过蓝色背光而显蓝色；最终提供了彩色显示所需的红、绿、蓝三原色，实现了彩色显示，并能够有效提高显示色域指数，且所述量子点层14内不包含蓝色量子点材料，将蓝光背光与透明光阻层的搭配使用，在提高光利用率的情况下同时缩减了材料成本。
综上所述，本发明提供了一种量子点彩膜基板的制作方法，借由含光催化剂的润湿性变化层经紫外光照射后其润湿性会变好的特点，形成高精细的量子点图形，简化量子点图形制作工艺的同时提升了量子点图形的精度，制作工艺简单，且减少了量子点材料的浪费，节约成本，所制得的量子点彩膜基板可有效提升显示装置的色饱和度与色域，增强显示面板的色彩表现能力。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (16)

  1. 一种量子点彩膜基板的制作方法，包括如下步骤：
    步骤1、提供彩膜基板，所述彩膜基板包括衬底基板、位于所述衬底基板上的黑色矩阵、及彩色滤光层，所述彩色滤光层包括红色色阻层、绿色色阻层、及透明光阻层；
    步骤2、提供润湿变化剂，所述润湿变化剂包括以下组分：光催化剂、有机聚硅氧烷、及溶剂；在所述黑色矩阵、及彩色滤光层上涂布一层润湿性变化剂，并随后对该层润湿性变化剂做真空干燥处理，以去除其中的溶剂，得到润湿变化层；
    步骤3、提供光罩，利用所述光罩对所述润湿变化层做紫外光曝光处理，其中，所述光罩上对应所述红色色阻层、绿色色阻层的部分为透光的部分，所述润湿变化层对应所述红色色阻层、绿色色阻层的第一部分在该步骤中受到紫外光照射，其内发生反应，使其润湿性得到改善，所述光罩上对应所述透明光阻层的部分为不透光的部分，所述润湿变化层对应所述透明光阻层的第二部分在该步骤中未受到紫外光照射，其润湿性没有发生改变；
    步骤4、在所述润湿变化层上涂布一层量子点涂布液，所述量子点涂布液包括以下组分：量子点、与量子点表面进行配位的量子点配体、溶剂、及添加剂；由于所述润湿变化层的第一部分经紫外光处理后润湿性得以提高，相对的，所述润湿变化层的第一部分比第二部分的润湿性好，量子点涂布液在所述润湿变化层的第二部分的表面具有很大的润湿角无法很好地润湿，而量子点涂布液在所述润湿变化层的第一部分的表面能够很好地润湿，在重力作用下该层量子点涂布液不会停留在所述润湿变化层的第二部分上，而会分布在所述润湿变化层的第一部分上，从而形成量子点图形；
    步骤5、对形成量子点图形的量子点涂布液进行加热处理，使其固化，得到图形化的量子点层；
    步骤6、在所述量子点层上形成透明导电层；进而完成量子点彩膜基板的制作。
  2. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述润湿变化剂中，所述光催化剂为TiO2、ZnO、或SnO2，所述光催化剂的粒径为10-50nm。
  3. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述润湿变化剂中，所述有机聚硅氧烷为含氟烷基的聚硅氧烷。
  4. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述润湿变化剂中，所述溶剂为甲醇、乙醇、异丙醇、丙酮、乙二醇二甲醚、乙二醇单乙醚、醋酸甲酯、醋酸乙酯、醋酸丁酯、甲苯、二甲苯中的一种或多种的组合。
  5. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述量子点为核壳结构，所述量子点的材料选自Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、和Ⅳ-Ⅵ族纳米半导体材料。
  6. 如权利要求5所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述量子点的粒径为1-10nm之间。
  7. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述量子点配体为三正辛基膦、或三正辛基氧化膦。
  8. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述溶剂为二甲苯、甲苯、环己基苯、三甲苯、吡啶、吡咯、己烷、戊烷、环己烷中的一种或多种的组合。
  9. 如权利要求1所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述量子点包括分别发红光、绿光的红色量子点、与绿色量子点。
  10. 如权利要求9所述的量子点彩膜基板的制作方法，其中，所述步骤6中所得到的量子点彩膜基板用于背光为蓝光的显示装置中。
  11. 一种量子点彩膜基板的制作方法，包括如下步骤：
    步骤1、提供彩膜基板，所述彩膜基板包括衬底基板、位于所述衬底基板上的黑色矩阵、及彩色滤光层，所述彩色滤光层包括红色色阻层、绿色色阻层、及透明光阻层；
    步骤2、提供润湿变化剂，所述润湿变化剂包括以下组分：光催化剂、有机聚硅氧烷、及溶剂；在所述黑色矩阵、及彩色滤光层上涂布一层润湿性变化剂，并随后对该层润湿性变化剂做真空干燥处理，以去除其中的溶剂，得到润湿变化层；
    步骤3、提供光罩，利用所述光罩对所述润湿变化层做紫外光曝光处理，其中，所述光罩上对应所述红色色阻层、绿色色阻层的部分为透光的部分，所述润湿变化层对应所述红色色阻层、绿色色阻层的第一部分在该步骤中受到紫外光照射，其内发生反应，使其润湿性得到改善，所述光罩上对应所述透明光阻层的部分为不透光的部分，所述润湿变化层对应所述透明光阻层的第二部分在该步骤中未受到紫外光照射，其润湿性没有发生改变；
    步骤4、在所述润湿变化层上涂布一层量子点涂布液，所述量子点涂布 液包括以下组分：量子点、与量子点表面进行配位的量子点配体、溶剂、及添加剂；由于所述润湿变化层的第一部分经紫外光处理后润湿性得以提高，相对的，所述润湿变化层的第一部分比第二部分的润湿性好，量子点涂布液在所述润湿变化层的第二部分的表面具有很大的润湿角无法很好地润湿，而量子点涂布液在所述润湿变化层的第一部分的表面能够很好地润湿，在重力作用下该层量子点涂布液不会停留在所述润湿变化层的第二部分上，而会分布在所述润湿变化层的第一部分上，从而形成量子点图形；
    步骤5、对形成量子点图形的量子点涂布液进行加热处理，使其固化，得到图形化的量子点层；
    步骤6、在所述量子点层上形成透明导电层；进而完成量子点彩膜基板的制作；
    其中，所述润湿变化剂中，所述光催化剂为TiO2、ZnO、或SnO2，所述光催化剂的粒径为10-50nm；
    其中，所述润湿变化剂中，所述有机聚硅氧烷为含氟烷基的聚硅氧烷；
    其中，所述润湿变化剂中，所述溶剂为甲醇、乙醇、异丙醇、丙酮、乙二醇二甲醚、乙二醇单乙醚、醋酸甲酯、醋酸乙酯、醋酸丁酯、甲苯、二甲苯中的一种或多种的组合；
    其中，所述步骤6中所得到的量子点彩膜基板用于背光为蓝光的显示装置中。
  12. 如权利要求11所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述量子点为核壳结构，所述量子点的材料选自Ⅱ-Ⅵ族半导体材料、Ⅲ-Ⅴ族半导体材料、和Ⅳ-Ⅵ族纳米半导体材料。
  13. 如权利要求12所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述量子点的粒径为1-10nm之间。
  14. 如权利要求11所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述量子点配体为三正辛基膦、或三正辛基氧化膦。
  15. 如权利要求11所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述溶剂为二甲苯、甲苯、环己基苯、三甲苯、吡啶、吡咯、己烷、戊烷、环己烷中的一种或多种的组合。
  16. 如权利要求11所述的量子点彩膜基板的制作方法，其中，所述量子点涂布液中，所述量子点包括分别发红光、绿光的红色量子点、与绿色量子点。
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