WO2017092074A1 - Mems麦克风、环境传感器的集成结构及制造方法 - Google Patents

Mems麦克风、环境传感器的集成结构及制造方法 Download PDF

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Publication number
WO2017092074A1
WO2017092074A1 PCT/CN2015/097310 CN2015097310W WO2017092074A1 WO 2017092074 A1 WO2017092074 A1 WO 2017092074A1 CN 2015097310 W CN2015097310 W CN 2015097310W WO 2017092074 A1 WO2017092074 A1 WO 2017092074A1
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WIPO (PCT)
Prior art keywords
substrate
sacrificial layer
groove
etching
mems microphone
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Ceased
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PCT/CN2015/097310
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English (en)
French (fr)
Inventor
詹竣凯
蔡孟锦
邱冠勋
周宗燐
宋青林
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Goertek Inc
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Goertek Inc
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Priority to US15/781,364 priority Critical patent/US10349187B2/en
Publication of WO2017092074A1 publication Critical patent/WO2017092074A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0029—Protection against environmental influences not provided for in groups B81B7/0012 - B81B7/0025
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to the field of sensors, and more particularly to an integrated structure of a MEMS microphone and an environmental sensor.
  • the invention also relates to a manufacturing method for integrating a MEMS microphone and an environmental sensor.
  • MEMS microphones and MEMS environmental sensor chips are generally discrete due to different detection principles. MEMS microphones require a closed space to protect their fine structures, while sensitive structures of MEMS environmental sensors need to be in contact with the outside world.
  • the two devices are designed and processed on different process platforms, and different packages are used to form separate chips.
  • the system manufacturer mounts the MEMS microphone chip and the MEMS environmental sensor chip on the same motherboard through SMT, thereby increasing the cost of the chip and increasing the cost of the package.
  • two conductive film layers are generally deposited on the surface of the substrate by means of semiconductor processing, and the two conductive film layers constitute a parallel capacitor structure.
  • the parallel capacitor structure can output a corresponding detected electrical signal.
  • An object of the present invention is to provide an integrated structure of a MEMS microphone and an environmental sensor. New technology program.
  • an integrated structure of a MEMS microphone, an environmental sensor, comprising a substrate;
  • a diaphragm and a back pole constituting a MEMS microphone capacitor structure are disposed on the substrate, and the substrate is disposed at a position below the diaphragm and the back pole, and a back cavity is disposed;
  • At least one groove is further disposed at an upper end of the substrate; further comprising a sensitive electrode above the substrate, the sensitive electrode comprising a fixing portion fixed on the end surface of the substrate by the first sacrificial layer, and extending into the concave portion a curved portion in the groove, the curved portion and a sidewall of the groove forming a capacitor structure of the MEMS environmental sensor; wherein the curved portion, the fixed portion and the groove form a sealed cavity.
  • the curved portion is suspended in the groove.
  • the bottom end of the bent portion is fixed to the bottom end of the groove by a sacrificial layer.
  • the sensitive electrode further includes a connecting portion connecting the adjacent two bent portions, the connecting portion is suspended above the end surface of the substrate.
  • a hollowing is further provided on the connecting portion, the hollowing is insulating the adjacent two curved portions; and further comprising filling the hollowed second sacrificial layer.
  • the invention also provides a manufacturing method of an integrated structure of a MEMS microphone and an environmental sensor, comprising the following steps:
  • etching a groove on the upper end surface of the substrate and sequentially depositing a first sacrificial layer and a first film layer on the upper end surface of the substrate and the inner wall of the groove, the first film layer being fixed on the end surface of the substrate a fixed portion on the upper portion and a curved portion extending into the recess;
  • the first sacrificial layer between the curved portion and the groove is completely etched away, so that the bent portion is suspended in the groove.
  • the method further comprises the steps of: etching a position on both sides of the second sacrificial layer on the hollow to form a sidewall groove, and depositing a protective layer on the upper end of the second sacrificial layer, the protective layer At the same time, it is filled in the side wall groove.
  • the step of etching and removing the second film layer at a position above the curved portion, and the step of etching the back electrode to form an airflow conducting hole is preferably, between the step e) and the step f), the step of etching and removing the second film layer at a position above the curved portion, and the step of etching the back electrode to form an airflow conducting hole .
  • the step of depositing a metal electrode on the back electrode, the substrate, the diaphragm, and the curved portion is further included.
  • the integrated structure of the invention integrates the capacitor structure of the MEMS microphone and the capacitor structure of the environmental sensor on the substrate, thereby improving the integration degree of the MEMS microphone and the environmental sensor, and the size of the entire package structure can be greatly reduced.
  • the diaphragm of the MEMS microphone and the sensitive electrode of the environmental sensor can adopt the same material and manufacturing process, so that the MEMS microphone and the environmental sensor can be simultaneously fabricated on the common substrate, thereby improving the production efficiency.
  • the MEMS environmental sensor in the integrated structure of the present invention changes the capacitor structure conventionally disposed on the surface of the substrate to a capacitor structure that vertically extends into the interior of the substrate, and increases the depth of the groove to increase the relationship between the two plates of the capacitor.
  • the sensing area can thereby greatly reduce the coverage area of the capacitor on the substrate, and the coverage area of the environmental sensor of the present invention can be reduced to 1/5-1/10 of the coverage area of the conventional sensor, or smaller, which satisfies the modern The thinning and development of electronic devices.
  • the inventors of the present invention have found that in the prior art, the MEMS microphone and the MEMS environmental sensor are respectively designed and processed on different process platforms, and then different package forms are used to form an independent chip, which increases the cost of the chip. Increased the cost of packaging. Therefore, the technical task to be achieved by the present invention or the technical problem to be solved is not thought of or expected by those skilled in the art, so the present invention is a new technical solution.
  • Figure 1 is a schematic illustration of the integrated structure of the present invention.
  • 2 to 8 are process flow diagrams of a method of manufacturing an integrated structure of the present invention.
  • the integrated structure of a MEMS microphone and an environmental sensor provided by the present invention can integrate a capacitor structure of a MEMS microphone and a capacitor structure of a MEMS environment sensor on the same chip.
  • the environmental sensor of the present invention may be a sensor for detecting a surrounding environment, such as a pressure sensor, a temperature sensor, a humidity sensor, etc., and the sensitive electrode is a sensitive film that undergoes corresponding deformation as the external environment changes, which is common knowledge of those skilled in the art. It will not be specified here.
  • the integrated structure of the present invention is provided with at least one groove 1a on the upper end surface of the substrate 1.
  • the number of the grooves 1a can be set according to the actual structure.
  • the shape of the groove 1a can be a U-shaped groove structure. It may be a circular arc groove structure or the like which is well known to those skilled in the art.
  • the sensor is provided with a sensitive electrode for constituting a MEMS environmental sensor, the sensitive electrode including a fixing portion 3b fixed to the end surface of the substrate 1, and a curved portion 3a extending into the groove 1a, wherein the curved portion 3a and the concave portion
  • the side walls of the groove 1a constitute a capacitor structure for detecting the surrounding environment.
  • the sensitive electrode may be made of a polysilicon material, which may be disposed on the substrate 1 by deposition or the like.
  • the first sacrificial layer 2 may be disposed between the fixing portion 3b and the substrate 1 .
  • the sacrificial layer may be a material well known to those skilled in the art such as silicon oxide, and the sacrificial layer may also be used as an insulating layer to ensure insulation between components, which is common knowledge of those skilled in the art. It will not be specified here.
  • the fixing portion 3b and the substrate 1 are insulated from each other by the first sacrificial layer 2; while the first sacrificial layer 2 can support the sensitive electrode above the substrate 1, preventing the curved portion 3a and the substrate 1 in the sensitive electrode Touch together.
  • the curved portion 3a is matched with the shape of the recess 1a.
  • the curved portion 3a may be selected from a U-shaped groove structure, or a circular arc groove structure well known to those skilled in the art may be selected.
  • the curved portion 3a is smaller than the size of the recess 1a, so that the curved portion 3a can protrude into the recess 1a, and the curved portion 3a, the fixed portion 3b and the recess 1a together form a closed cavity.
  • the substrate 1 is provided with a diaphragm 3e and a back electrode 7 for constituting a MEMS microphone, and the diaphragm 3e and the back electrode 7 constitute a flat-plate capacitor structure.
  • the capacitor structure of the MEMS microphone can adopt the manner that the diaphragm 3e is on the upper and the back poles 7 or the diaphragm 3e can be on the lower and back poles 7.
  • the capacitance structure of the MEMS microphone adopts a structure in which the diaphragm 3e is on the lower and back poles 7, that is, the diaphragm 3e passes through the first sacrificial layer 2 Provided on the substrate 1, the back pole 7 is supported above the diaphragm 3e by the second sacrificial layer 4, so that the diaphragm 3e and the back pole 7 have a certain distance, and the sound signal can be formed by the conventional lead wire. A component that is converted into an electrical signal.
  • the functional principle of the MEMS microphone capacitor structure is well known to those skilled in the art and will not be described herein.
  • the back surface 1b of the substrate 1 corresponding to the diaphragm 3e is disposed such that the diaphragm 3e is suspended above the back chamber 1b.
  • a plurality of airflow conducting holes 7a are further disposed on the back pole 7 to balance the airflow of the front cavity and the rear cavity of the MEMS microphone.
  • the integrated structure of the invention integrates the capacitor structure of the MEMS microphone and the environmental sensor
  • the container structure is integrated on the substrate, which improves the integration of the MEMS microphone and the environmental sensor, and can greatly reduce the size of the entire package structure.
  • the diaphragm of the MEMS microphone and the sensitive electrode of the environmental sensor can adopt the same material and manufacturing process, so that the MEMS microphone and the environmental sensor can be simultaneously fabricated on the common substrate, thereby improving the production efficiency.
  • the curved portion 3a of the sensitive electrode and the side wall of the recess 1a constitute a vertical capacitor structure, and when the external environment changes (for example, a pressure change), the bent portion 3a is deformed accordingly.
  • the distance between the bent portion 3a and the side wall of the recess 1a can be changed to change the signal output from the capacitor.
  • the environmental sensor of the present invention may be elongated, comb-shaped, spiral or other shape well known to those skilled in the art; the integrated structure MEMS environmental sensor of the present invention has a capacitor structure conventionally disposed on the surface of the substrate, The capacitor structure is vertically extended into the interior of the substrate, and the depth of the groove is increased to increase the sensing area between the two plates of the capacitor, thereby greatly reducing the coverage area of the capacitor on the substrate.
  • the coverage area of environmental sensors can be reduced to 1/5-1/10 of the traditional sensor coverage area, or smaller, which meets the thin and light development of modern electronic devices.
  • the curved portion 3a of the sensitive electrode is suspended in the recess 1a of the substrate, that is, there is no connection between the curved portion 3a and the recess 1a, when the external environment When the change occurs, the bent portion 3a is deformed accordingly, whereby the distance between the curved portion 3a and the side wall of the recess 1a can be changed to change the signal output from the capacitor.
  • the curved portion 3a of the sensitive electrode protrudes into the recess 1a of the substrate, and the bottom end of the curved portion 3a and the bottom end of the recess 1a pass through the first sacrificial layer 2 Connected together, that is, the bottom end of the bent portion 3a is fixed by the first sacrificial layer 2.
  • the curved portion 3a can be prevented from swinging in the groove 1a, and only the position of the side wall of the curved portion 3a is deformed according to changes in the external environment. This changes the distance between the bent portion 3a and the side wall of the recess 1a, causing a change in the signal output from the capacitor.
  • the fixing portion 3b when the number of the grooves 1a is provided in plurality, the fixing portion 3b may be disposed at an edge position of each of the grooves 1a, or may be provided only at the edge of the outermost groove 1a.
  • the sensitive electrode when the fixing portion 3b is fixed together with the edge of the outermost groove 1a, the sensitive electrode further includes a connecting portion 3d connecting the adjacent two curved portions 3a, with reference to FIG. 1, and the connection The joint portion 3d is preferably suspended above the end surface of the substrate 1.
  • the environmental sensor of the present invention can be provided with a plurality of sets of capacitor structures according to actual needs, which requires setting the hollow 3c on some of the connecting portions 3d, refer to FIG.
  • the adjacent two curved portions 3a are insulated by the hollow 3c; at the same time, in order to ensure that the environmental sensor has a closed cavity, the second sacrificial layer 4 needs to be filled in the hollow 3c.
  • a protective layer 5 may be provided, by which water or mist can be prevented from entering the interior of the environmental sensor.
  • the integrated structure of the present invention can extract the signals of the MEMS microphone and the MEMS environmental sensor through the traditional lead structure to connect with the terminal; of course, the signal inside the structure can be conducted by depositing and etching the conductive layer to The outside of the entire integrated structure is a common knowledge of those skilled in the art and will not be specifically described herein.
  • the invention also provides a manufacturing method of an integrated structure of a MEMS microphone and an environmental sensor, which comprises the following steps;
  • a plurality of grooves 1a are etched on the upper end surface of the substrate 1, and the first sacrificial layer 2 and the first film layer 3 are sequentially deposited on the upper end surface of the substrate 1 and the inner wall of the groove 1a, 2;
  • the substrate 1 may be a single crystal silicon material, the shape of the groove 1a is selected according to actual needs, for example, a U-shaped groove, a circular arc groove structure, etc.;
  • the first sacrificial layer 2, the first film layer 3 are sequentially deposited Over the entire upper end surface of the substrate 1 and matching the shape of the entire upper end of the substrate 1;
  • the first film layer 3 includes a diaphragm of the MEMS microphone and a sensitive electrode of the MEMS environment sensor. In a subsequent process, the two are separated; wherein the sensitive electrode of the MEMS environment sensor includes the first sacrificial layer 2
  • the fixing portion 3b fixed to the end surface of the substrate 1 and the curved portion 3a projecting into the groove 1a.
  • the shape of the curved portion 3a may be matched with the shape of the groove 1a. For example, when the groove 1a has a U-shaped structure, the curved portion 3a may have a U-shaped groove structure conforming to its shape, or may have a circular arc groove structure or the like.
  • the sensitive electrode of the MEMS environmental sensor further includes a connecting portion 3d connecting the adjacent two curved portions 3a, with reference to FIGS. 1 and 2.
  • the sacrificial layer can be well known to those skilled in the art, such as silicon oxide.
  • the material, the sacrificial layer can also be used as an insulating layer to ensure insulation between the components.
  • the first sacrificial layer 2 can serve as an insulating layer to ensure insulation between the first film layer 3 and the substrate 1. This is a common knowledge of those skilled in the art, and will not be specifically described herein. .
  • a sacrificial layer 2 is etched away, referring to FIG. 3; wherein the first sacrificial layer 2 can be etched using hydrofluoric acid, which is well known to those skilled in the art and will not be specifically described herein.
  • the hollow 3c is disposed at the position of the connecting portion 3d. It should be noted that the hollow 3c can corrode the first sacrificial layer 2 as an etching hole; It is required that the two adjacent curved portions 3a are separated from each other by the hollow 3c, for example, when it is required to form a plurality of sets of capacitor structures of the MEMS environmental sensor on the substrate 1, that is, some adjacent curved portions 3a are required When insulated from each other, the hollow 3c may be provided to penetrate both ends of the connecting portion 3d, so that the adjacent two bent portions 3a are completely disconnected.
  • the first sacrificial layer 2 between the curved portion 3a and the side wall of the recess 1a is etched away by the hollow 3c, leaving the first sacrifice between the curved portion 3a and the bottom end of the recess 1a.
  • the layer 2, that is, the bottom end of the bent portion 3a is connected to the bottom end of the recess 1a by the first sacrificial layer 2, and the side wall of the bent portion 3a and the side wall of the recess 1a constitute a capacitor structure of the MEMS environmental sensor.
  • the first sacrificial layer 2 between the curved portion 3a and the groove 1a is completely etched away by the hollow 3c, so that there is no connection between the curved portion 3a and the groove 1a. That is, the curved portion 3a of the sensitive electrode is suspended in the recess 1a of the substrate 1, thereby improving the sensitivity of the curved portion 3a, which is advantageous for improving the detection accuracy of the capacitor structure.
  • the first sacrificial layer 2 under the connecting portion 3d is also etched away by etching, so that the connecting portion 3d is suspended on the end surface of the substrate 1, which improves the sensitivity of the bent portion 3a connected thereto, and further improves The detection accuracy of the capacitor structure.
  • the second sacrificial layer 4 is deposited over the diaphragm 3e of the MEMS microphone and the sensitive electrode of the MEMS environmental sensor, and passes The second sacrificial layer seals the hollowed out 3c etched in the above step.
  • the second film layer is made of polysilicon material, It is deposited on the second sacrificial layer 4 by means well known to those skilled in the art and etched to form a back pole 7 above the diaphragm 3e.
  • the second film layer may cover the region of the MEMS environmental sensor as an extraction electrode or a shielding layer of the MEMS environmental sensor; in the subsequent step, the second film layer of the MEMS environmental sensor region needs to be performed. Etching exposes the second sacrificial layer 4 over the curved portion 3a for subsequent etching.
  • the diaphragm 3e of the MEMS microphone is released, so that the diaphragm 3e and the back pole 7 constitute a capacitor structure of the MEMS microphone; the position above the curved portion 3a is The sacrificial layer 4 is etched away, so that the bent portion 3a is exposed to the outside, so that the bent portion 3a can sense the external environment change, and together with the side wall of the substrate recess 1a constitutes a capacitor structure of the MEMS environmental sensor.
  • the integrated structure of the present invention and the manufacturing method thereof further include a casing for packaging (not shown), the casing may be fixed on the substrate 1 and package the capacitor structure of the MEMS microphone and the MEMS environmental sensor, corresponding to Ground, there should also be a sound hole for the MEMS microphone, and It is common knowledge of those skilled in the art to connect the bent portion of the MEMS environment sensor to the outside, and the like, which is not specifically described herein.
  • the method further includes the steps of: etching the position of the second sacrificial layer 4 on both sides of the hollow 3c to form the sidewall groove 4a, refer to FIG. 5, and A protective layer 5 is deposited on the upper end of the second sacrificial layer 4, and the protective layer 5 is simultaneously filled in the sidewall trench 4a, and then the protective layer 5 is patterned and etched, with reference to FIGS. 6 and 7.
  • the protective layer 5 may be formed of a silicon nitride material in a hollowed out position by deposition, etching, etc., in a manner well known to those skilled in the art.
  • step e) and the step f) further comprising the step of etching and removing the second film layer at a position above the curved portion 3a, and engraving the back electrode 7 The step of etching to form the gas flow via hole 7a.
  • the second film layer at a position above the curved portion 3a is etched away, and the second sacrificial layer 4 located above the curved portion 3a is exposed, so that the second sacrificial layer 4 at the position can be subsequently etched. Thereby, the curved portion 3a is exposed.
  • the method further comprises the step of depositing a metal electrode 6 on the substrate 1, the back electrode 7, and the diaphragm 3e, the metal electrode 6 serving as a solder joint of the capacitor lead, so that
  • the substrate can be selectively etched by depositing the first sacrificial layer 2 and the second sacrificial layer 4, and by depositing a second film layer and etching the second film layer. 1.
  • the electrodes of the diaphragm 3e and the curved portion 3a are taken out, which is common knowledge of those skilled in the art and will not be specifically described herein.

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Abstract

一种MEMS麦克风、环境传感器的集成结构及制造方法，在基材（1）上设置有构成电容器结构的振膜（3e）、背极（7），在所述基材（1）的上端还设有至少一个凹槽（1a）；还包括位于基材（1）上方的敏感电极，所述敏感电极包括通过第一牺牲层（2）固定在基材（1）端面上的固定部（3b），以及伸入至凹槽（1a）内的弯曲部（3a），所述弯曲部（3a）与凹槽（1a）的侧壁构成了电容器结构。该集成结构，将麦克风的电容器结构、环境传感器的电容器结构集成在基材（1）上，从而提高了麦克风和环境传感器的集成度，可以大大降低整个封装结构的尺寸。同时，麦克风的振膜（3e）、环境传感器的敏感电极可以采用相同的材料和制作工艺，使得可以在共用的基材（1）上同时制作出MEMS麦克风和环境传感器，提高了生产的效率。

Description

MEMS麦克风、环境传感器的集成结构及制造方法 技术领域
本发明涉及传感器领域，更具体地，涉及一种MEMS麦克风及环境传感器的集成结构；本发明还涉及一种对MEMS麦克风、环境传感器进行集成的制造方法。
背景技术
近年来，随着科学技术的发展，手机、笔记本电脑等电子产品的体积在不断减小，而且人们对这些便携电子产品的性能要求也越来越高，这就要求与之配套的电子零部件的体积也必须随之减小。
传感器作为测量器件，已经普遍应用在手机、笔记本电脑等电子产品上。在现有的工艺结构中，由于检测的原理不同，MEMS麦克风和MEMS环境传感器芯片一般是分立的，MEMS麦克风需要密闭的空间来保护其微细结构，而MEMS环境传感器的敏感结构需要与外界接触，两种器件分别基于不同的工艺平台上进行设计和加工，再利用不同的封装形式，形成独立的芯片。装配的时候，系统厂商将MEMS麦克风芯片和MEMS环境传感器芯片通过SMT的方式，贴装在同一个主板上，从而增加了芯片的成本，也增加了封装的成本。
而且在现有的环境传感器结构中，一般都是通过半导体加工的方式，在基材的表面沉积两个导电膜层，该两个导电膜层构成了平行电容结构。当外界的环境变化时，两个导电膜层之间的距离或相对面积发生变化，由此该平行电容结构可输出相应的检测电信号。这种平行设置的电容结构，占用的面积较大，也不符合现代的发展要求。
发明内容
本发明的一个目的是提供一种MEMS麦克风、环境传感器的集成结构 的新技术方案。
根据本发明的第一方面，提供了一种MEMS麦克风、环境传感器的集成结构，包括基材；
在所述基材上设置有构成MEMS麦克风电容器结构的振膜、背极，所述基材位于振膜、背极下方的位置设置有背腔；
在所述基材的上端还设有至少一个凹槽；还包括位于基材上方的敏感电极，所述敏感电极包括通过第一牺牲层固定在基材端面上的固定部，以及伸入至凹槽内的弯曲部，所述弯曲部与凹槽的侧壁构成了MEMS环境传感器的电容器结构；其中，所述弯曲部、固定部与凹槽形成了密闭的容腔。
优选地，所述弯曲部悬空在所述凹槽内。
优选地，所述弯曲部的底端通过牺牲层固定在凹槽的底端。
优选地，所述敏感电极还包括连接相邻两个弯曲部的连接部，所述连接部悬空在基材端面的上方。
优选地，在所述连接部上还设置有镂空，所述镂空将相邻两个弯曲部绝缘开；还包括填充所述镂空的第二牺牲层。
本发明还提供了一种MEMS麦克风、环境传感器的集成结构的制造方法，包括以下步骤：
a)在基材的上端面刻蚀出凹槽，并在基材的上端面、凹槽的内壁上依次沉积第一牺牲层、第一膜层，该第一膜层包括固定在基材端面上的固定部，以及伸入至凹槽内的弯曲部；
b)对位于凹槽附近的第一膜层进行刻蚀，形成镂空，并通过该镂空至少将位于弯曲部与凹槽侧壁之间的第一牺牲层腐蚀掉；
c)对基材端面上的第一膜层进行刻蚀，以形成MEMS麦克风的振膜；
d)在整个第一膜层的上方继续沉积第二牺牲层，且该第二牺牲层将所述镂空密封；
e)在所述第二牺牲层上方沉积第二膜层，并对该第二膜层进行刻蚀，形成MEMS麦克风的背极；
f)对基材进行刻蚀，以形成MEMS麦克风的背腔；
g)通过该背腔对第一牺牲层、第二牺牲层进行腐蚀，以将振膜释放 出来；同时将弯曲部上方位置的第二牺牲层腐蚀掉，以将弯曲部暴露出来。
优选地，所述步骤(b)中将弯曲部与凹槽之间的第一牺牲层完全腐蚀掉，使弯曲部悬空在凹槽内。
优选地，在步骤d)中，还包括以下步骤：对第二牺牲层上位于镂空两侧的位置进行刻蚀以形成侧壁槽，并在第二牺牲层的上端沉积保护层，该保护层同时填充在侧壁槽内。
优选地，在所述步骤e)与步骤f)之间，还包括将弯曲部上方位置的第二膜层刻蚀去除的步骤，以及对背极进行刻蚀，以形成气流导通孔的步骤。
优选地，所述步骤f)中，还包括在背极、基材、振膜、弯曲部上沉积金属电极的步骤。
本发明的集成结构，将MEMS麦克风的电容器结构、环境传感器的电容器结构集成在基材上，从而提高了MEMS麦克风和环境传感器的集成度，可以大大降低整个封装结构的尺寸。同时，MEMS麦克风的振膜、环境传感器的敏感电极可以采用相同的材料和制作工艺，使得可以在共用的基材上同时制作出MEMS麦克风和环境传感器，提高了生产的效率。
本发明集成结构中的MEMS环境传感器，将传统设置在基材表面的电容器结构，改为垂直伸入基材内部的电容器结构，加大凹槽的深度即可增大电容器两个极板之间的感测面积，由此可大大缩小电容器在基材上的覆盖面积，本发明环境传感器的覆盖面积可以缩小至传统传感器覆盖面积的1/5-1/10，或更小，这满足了现代电子器件的轻薄化发展。
本发明的发明人发现，在现有技术中，MEMS麦克风、MEMS环境传感器分别基于不同的工艺平台上进行设计和加工，再利用不同的封装形式，形成独立的芯片，增加了芯片的成本，也增加了封装的成本。因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是本发明集成结构的示意图。
图2至图8是本发明集成结构制造方法的工艺流程图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
参考图1，本发明提供的一种MEMS麦克风、环境传感器的集成结构，可以将MEMS麦克风的电容器结构以及MEMS环境传感器的电容器结构集成在同一芯片上。本发明的环境传感器可以是压力传感器、温度传感器、湿度传感器等用于检测周围环境的传感器等，其敏感电极为随外界环境变化而发生相应形变的敏感膜，这属于本领域技术人员的公知常识，在此不再具体说明。
本发明的集成结构，在所述基材1的上端面设有至少一个凹槽1a，凹槽1a的数量可以根据实际结构需要进行设置，该凹槽1a的形状可以是U形槽结构，也可以是本领域技术人员所熟知的圆弧槽结构等。基材1的上 方设置有用于构成MEMS环境传感器的敏感电极，该敏感电极包括固定在基材1端面上的固定部3b，以及伸入至凹槽1a中的弯曲部3a，其中，所述弯曲部3a与凹槽1a的侧壁构成了用于检测周围环境的电容器结构。具体地，该敏感电极可以采用多晶硅材料，其可以通过沉积等方式设置在基材1上。其中，固定部3b与基材1之间可设置第一牺牲层2。在此需要注意的是，牺牲层可以采用氧化硅等本领域技术人员所熟知的材料，牺牲层同时还可以作为绝缘层使用，以保证部件之间的绝缘，这属于本领域技术人员的公知常识，在此不再具体说明。通过第一牺牲层2使固定部3b与基材1之间互相绝缘；同时该第一牺牲层2可以将敏感电极支撑在基材1的上方，防止敏感电极中的弯曲部3a与基材1接触在一起。
弯曲部3a与凹槽1a的形状相匹配，例如凹槽1a为U形结构时，该弯曲部3a可以选择U形槽结构，也可以选择本领域技术人员所熟知的圆弧槽结构。弯曲部3a小于凹槽1a的尺寸，使得该弯曲部3a可以伸入至凹槽1a内，所述弯曲部3a、固定部3b与凹槽1a共同围成了一密闭的容腔。
本发明的集成结构，在所述基材1上设置有用于构成MEMS麦克风的振膜3e以及背极7，振膜3e与背极7构成了平板式的电容器结构。对于本领域的技术人员来说，MEMS麦克风的电容器结构可以采用振膜3e在上、背极7在下的方式，也可以采用振膜3e在下、背极7在上的方式。在本发明一个具体的实施方式中，为了与MEMS环境传感器对应起来，MEMS麦克风的电容结构采用振膜3e在下、背极7在上的结构，也就是说，振膜3e通过第一牺牲层2设置在基材1上，背极7通过第二牺牲层4支撑在振膜3e的上方，使得振膜3e与背极7之间具有一定的距离，通过传统的引线，即可构成将声音信号转化为电信号的组件。MEMS麦克风电容器结构的功能原理属于本领域技术人员的公知常识，在此不再进行赘述。
为了使MEMS麦克风的电容器结构发挥作用，所述基材1上与振膜3e对应的位置设置有背腔1b，使得该振膜3e悬置在背腔1b的上方。同时，在所述背极7上还设置有多个气流导通孔7a，以便于均衡MEMS麦克风前腔与后腔的气流。
本发明的集成结构，将MEMS麦克风的电容器结构、环境传感器的电 容器结构集成在基材上，从而提高了MEMS麦克风和环境传感器的集成度，可以大大降低整个封装结构的尺寸。同时，MEMS麦克风的振膜、环境传感器的敏感电极可以采用相同的材料和制作工艺，使得可以在共用的基材上同时制作出MEMS麦克风和环境传感器，提高了生产的效率。
本发明的集成结构，敏感电极的弯曲部3a与凹槽1a的侧壁构成了垂直式的电容器结构，当外界环境发生变化(例如压力变化)时，弯曲部3a会随之发生形变，由此可以改变弯曲部3a与凹槽1a侧壁之间的距离，使该电容器输出的信号发生变化。本发明的环境传感器，其可以是长条形、梳齿状、螺旋状或者本领域技术人员所熟知的其它形状；本发明集成结构的MEMS环境传感器，将传统设置在基材表面的电容器结构，改为垂直伸入基材内部的电容器结构，加大凹槽的深度即可增大电容器两个极板之间的感测面积，由此可大大缩小电容器在基材上的覆盖面积，本发明环境传感器的覆盖面积可以缩小至传统传感器覆盖面积的1/5-1/10，或更小，这满足了现代电子器件的轻薄化发展。
在本发明一个优选的实施方式中，所述敏感电极的弯曲部3a悬空在基材的凹槽1a内，也就是说，弯曲部3a与凹槽1a之间没有任何的连接关系，当外界环境发生变化时，弯曲部3a会随之发生形变，由此可以改变弯曲部3a与凹槽1a侧壁之间的距离，使该电容器输出的信号发生变化。
在本发明另一优选的实施方式中，所述敏感电极的弯曲部3a伸入至基材的凹槽1a内，且弯曲部3a的底端与凹槽1a的底端通过第一牺牲层2连接在一起，也就是说，通过第一牺牲层2将弯曲部3a的底端固定住。当外界环境发生变化时，由于弯曲部3a的底端被固定住，从而可以防止弯曲部3a在凹槽1a内摆动，只有弯曲部3a侧壁的位置会随外界环境的变化而发生形变，由此改变了弯曲部3a与凹槽1a侧壁之间的距离，使该电容器输出的信号发生变化。
在本发明一个优选的实施方式中，当凹槽1a的数量设置有多个的时候，固定部3b可以设置在每个凹槽1a的边缘位置，也可以仅设置在最外侧凹槽1a的边缘。当固定部3b与最外侧凹槽1a的边缘固定在一起时，所述敏感电极还包括连接相邻两个弯曲部3a的连接部3d，参考图1，且该连 接部3d优选悬空在基材1端面的上方。此时由于弯曲部3a、连接部3d与基材1不接触在一起，也就是说，弯曲部3a、连接部3d均处于悬空的状态，这就提高了弯曲部3a的灵敏度，使得最终检测到的结果更为精准。
本发明的环境传感器，可以根据实际需要设置多组电容结构，这就需要在某些连接部3d上设置镂空3c，参考图3。通过该镂空3c将相邻两个弯曲部3a绝缘开；同时，为了保证该环境传感器具有一密闭的容腔，还需要在镂空3c里填充第二牺牲层4。本发明进一步优选的是，在该第二牺牲层的上端还可设置保护层5，通过该保护层5可以防止水或雾气进入至环境传感器的内部。
本发明的集成结构，可以通过传统的引线结构将MEMS麦克风以及MEMS环境传感器的信号引出，以便与终端进行连接；当然也可以通过沉积、刻蚀导电层的方式将位于结构内部的信号导通至整个集成结构的外部，这属于本领域技术人员的公知常识，在此不再具体说明。
本发明还提供了一种MEMS麦克风、环境传感器的集成结构的制造方法，其包括以下步骤；
a)首先，在基材1的上端面刻蚀出多个凹槽1a，并在基材1的上端面、凹槽1a的内壁上依次沉积第一牺牲层2、第一膜层3，参考图2；基材1可以采用单晶硅材料，其凹槽1a的形状根据实际需要进行选择，例如采用U形槽、圆弧槽结构等；第一牺牲层2、第一膜层3依次沉积在整个基材1的上端面，并且与基材1整个上端的形状相匹配；
该第一膜层3包含了MEMS麦克风的振膜以及MEMS环境传感器的敏感电极，在后续工序中，需将将二者分开；其中，所述MEMS环境传感器的敏感电极包括通过第一牺牲层2固定于基材1端面上的固定部3b以及伸入至凹槽1a内的弯曲部3a。该弯曲部3a的形状可以和凹槽1a的形状匹配，例如当凹槽1a呈U形结构，该弯曲部3a可以呈与其形状一致的U形槽结构，也可以呈圆弧槽结构等。
当基材1上凹槽1a的数量设置有多个时，所述MEMS环境传感器的敏感电极还包括连接相邻两个弯曲部3a的连接部3d，参考图1、图2。
在此需要注意的是，牺牲层可以采用氧化硅等本领域技术人员所熟知 的材料，牺牲层同时还可以作为绝缘层使用，以保证部件之间的绝缘。例如在上述步骤a)中，第一牺牲层2可以作为绝缘层，以保证第一膜层3与基材1之间的绝缘，这属于本领域技术人员的公知常识，在此不再具体说明。
b)对位于凹槽1a附近的第一膜层3进行刻蚀，以形成位于凹槽1a附近的镂空3c，并通过该镂空3c至少将位于弯曲部3a与凹槽1a侧壁之间的第一牺牲层2腐蚀掉，参考图3；其中，可利用氢氟酸对第一牺牲层2进行腐蚀，这属于本领域技术人员的公知常识，在此不再具体说明。
当凹槽1a设置有多个的时候，该镂空3c设置在连接部3d位置，在此需要注意的是，该镂空3c可以作为腐蚀孔对第一牺牲层2进行腐蚀；同时也可以根据实际设计需要，通过该镂空3c将两个相邻的弯曲部3a相互隔绝开，例如当需要在基材1形成MEMS环境传感器的多组电容器结构时，也就是说需要使某些相邻的弯曲部3a相互绝缘时，可以设置该镂空3c贯通至连接部3d的两端，从而使相邻的两个弯曲部3a完全断开。
在本发明一个具体的实施方式中，通过镂空3c将弯曲部3a与凹槽1a侧壁之间的第一牺牲层2腐蚀掉，保留弯曲部3a与凹槽1a底端之间的第一牺牲层2，也就是说，弯曲部3a的底端通过第一牺牲层2连接在凹槽1a的底端，弯曲部3a的侧壁与凹槽1a的侧壁构成了MEMS环境传感器的电容器结构。
在本发明另一具体的实施方式中，通过镂空3c将弯曲部3a与凹槽1a之间第一牺牲层2完全腐蚀掉，使得弯曲部3a与凹槽1a之间没有任何的连接关系，也就是说，所述敏感电极的弯曲部3a悬空在基材1的凹槽1a内，从而提高了弯曲部3a的敏感度，这有利于提高电容器结构的检测精度。
优选的是，通过腐蚀，将连接部3d下方的第一牺牲层2也腐蚀掉，使得连接部3d悬空在基材1的端面上，提高了与其连接的弯曲部3a的敏感度，进一步提高了电容器结构的检测精度。
c)对基材1端面上的第一膜层3进行刻蚀，以形成MEMS麦克风的振膜3e，参考图4；对第一膜层3上位于MEMS麦克风的区域进行图形化刻蚀，以形成MEMS麦克风的振膜3e，该振膜3e采用本领域技术人员所熟知的结 构，其刻蚀的方式、图案均属于本领域技术人员的公知常识，在此不再具体说明。
d)在所述整个第一膜层3的上方继续沉积第二牺牲层4，参考图5；该第二牺牲层4沉积在MEMS麦克风的振膜3e以及MEMS环境传感器的敏感电极上方，并通过该第二牺牲层将上述步骤中刻蚀的镂空3c密封起来。
e)在所述第二牺牲层4上方沉积第二膜层，并对该第二膜层进行刻蚀，以形成MEMS麦克风的背极7，参考图6；第二膜层采用多晶硅材料，可通过本领域技术人员所熟知的方式沉积在第二牺牲层4上，并对其进行刻蚀，以形成位于振膜3e上方的背极7。
在此需要注意的是，该第二膜层可以覆盖至MEMS环境传感器的区域，以作为MEMS环境传感器的引出电极或者屏蔽层等；在后续步骤中需要对MEMS环境传感器区域的第二膜层进行刻蚀，将弯曲部3a上方的第二牺牲层4露出，以便进行后续的腐蚀。
f)对基材1进行刻蚀，以形成MEMS麦克风的背腔1b，参考图8；对基材1位于振膜3e下方的位置进行刻蚀，以形成位于振膜3e下方的背腔1b。背腔1b的结构以及其刻蚀的方式均属于本领域技术人员的公知常识，在此不再具体说明。
g)通过该背腔1b对第一牺牲层2、第二牺牲层4进行腐蚀，以将振膜3e释放出来；同时将弯曲部3a上方位置的第二牺牲层4腐蚀掉，从而将弯曲部3a露出，以便该弯曲部3a可以感应外界的环境变化，最终形成了本发明的集成结构，参考图1。
通过对第一牺牲层2、第二牺牲层4进行腐蚀，将MEMS麦克风的振膜3e释放出来，使得振膜3e与背极7构成了MEMS麦克风的电容器结构；将弯曲部3a上方位置的第二牺牲层4腐蚀掉，使得弯曲部3a暴露在外界，以便该弯曲部3a可以感应外界的环境变化，并与基材凹槽1a的侧壁共同构成了MEMS环境传感器的电容器结构。
本发明的集成结构及其制造方法，还包括用于封装的外壳(视图未给出)，所述外壳可以固定在基材1上，并将MEMS麦克风、MEMS环境传感器的电容器结构封装起来，对应地，还应该设有MEMS麦克风的声孔，以及 连通MEMS环境传感器弯曲部与外界的导通孔等，这属于本领域技术人员的公知常识，在此不再具体说明。
在本发明一个优选的实施方式中，在步骤d)中，还包括以下步骤：对第二牺牲层4上位于镂空3c两侧的位置进行刻蚀以形成侧壁槽4a，参考图5，并在第二牺牲层4的上端沉积的保护层5，该保护层5同时填充在该侧壁槽4a内，之后再对保护层5进行图形化刻蚀，参考图6、图7。保护层5可以采用氮化硅材料，通过沉积、刻蚀的等本领域技术人员所熟知的方式将其设置在镂空的位置上。
在本发明另一个优选的实施方式中，在所述步骤e)与步骤f)之间，还包括将弯曲部3a上方位置的第二膜层刻蚀去除的步骤，以及对背极7进行刻蚀，以形成气流导通孔7a的步骤。
如上文所述，将弯曲部3a上方位置的第二膜层刻蚀去除，将位于弯曲部3a上方的第二牺牲层4暴露出来，以便后续可以对该位置的第二牺牲层4进行刻蚀，从而将弯曲部3a露出。
对背极7进行刻蚀，形成气流导通孔7a，在背极7上设置气流导通孔属于本领域技术人员的公知常识，在此对其功能不再具体描述。
本发明进一步优选的是，在所述步骤f)中，还包括在基材1、背极7、振膜3e上沉积金属电极6的步骤，该金属电极6可作为电容器引线的焊点，以便于将各电容器结构的信号引出，参考图8。对于如图1所示的集成结构，可通过对第一牺牲层2、第二牺牲层4进行选择性刻蚀，并通过沉积第二膜层、刻蚀第二膜层的方式，将基材1、振膜3e、弯曲部3a的电极引出，这属于本领域技术人员的公知常识，在此不再具体说明。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (10)

  1. 一种MEMS麦克风、环境传感器的集成结构，其特征在于：包括基材(1)；
    在所述基材(1)上设置有构成MEMS麦克风电容器结构的振膜(3e)、背极(7)，所述基材(1)位于振膜(3e)、背极(7)下方的位置设置有背腔(1b)；
    在所述基材(1)的上端还设有至少一个凹槽(1a)；还包括位于基材(1)上方的敏感电极，所述敏感电极包括通过第一牺牲层(2)固定在基材(1)端面上的固定部(3b)，以及伸入至凹槽(1a)内的弯曲部(3a)，所述弯曲部(3a)与凹槽(1a)的侧壁构成了MEMS环境传感器的电容器结构；其中，所述弯曲部(3a)、固定部(3b)与凹槽(1a)形成了密闭的容腔。
  2. 根据权利要求1所述的环境传感器，其特征在于：所述弯曲部(3a)悬空在所述凹槽(1a)内。
  3. 根据权利要求1所述的环境传感器，其特征在于：所述弯曲部(3a)的底端通过牺牲层固定在凹槽(1a)的底端。
  4. 根据权利要求1所述的环境传感器，其特征在于：所述敏感电极还包括连接相邻两个弯曲部(3a)的连接部(3d)，所述连接部(3d)悬空在基材(1)端面的上方。
  5. 根据权利要求4所述的环境传感器，其特征在于：在所述连接部(3d)上还设置有镂空(3c)，所述镂空(3c)将相邻两个弯曲部(3a)绝缘开；还包括填充所述镂空(3c)的第二牺牲层(4)。
  6. 一种MEMS麦克风、环境传感器的集成结构的制造方法，其特征在于，包括以下步骤：
    a)在基材(1)的上端面刻蚀出凹槽(1a)，并在基材(1)的上端面、凹槽(1a)的内壁上依次沉积第一牺牲层(2)、第一膜层(3)，该第一膜层(3)包括固定在基材(1)端面上的固定部(3b)，以及伸入至凹槽(1a)内的弯曲部(3a)；
    b)对位于凹槽(1a)附近的第一膜层(3)进行刻蚀，形成镂空(3c)，并通过该镂空(3c)至少将位于弯曲部(3a)与凹槽(1a)侧壁之间的第一牺牲层(2)腐蚀掉；
    c)对基材(1)端面上的第一膜层(3)进行刻蚀，以形成MEMS麦克风的振膜(3e)；
    d)在整个第一膜层(3)的上方继续沉积第二牺牲层(4)，且该第二牺牲层(4)将所述镂空(3c)密封；
    e)在所述第二牺牲层(4)上方沉积第二膜层，并对该第二膜层进行刻蚀，形成MEMS麦克风的背极(7)；
    f)对基材(1)进行刻蚀，以形成MEMS麦克风的背腔(1b)；
    g)通过该背腔(1b)对第一牺牲层、第二牺牲层进行腐蚀，以将振膜(3e)释放出来；同时将弯曲部(3a)上方位置的第二牺牲层(4)腐蚀掉，以将弯曲部(3a)暴露出来。
  7. 根据权利要求6所述的制造方法，其特征在于：所述步骤(b)中，将弯曲部(3a)与凹槽(1a)之间的第一牺牲层(2)完全腐蚀掉，使弯曲部(3a)悬空在凹槽(1a)内。
  8. 根据权利要求6所述的制造方法，其特征在于：在步骤d)中，还包括以下步骤：对第二牺牲层(4)上位于镂空(3c)两侧的位置进行刻蚀以形成侧壁槽(4a)，并在第二牺牲层(4)的上端沉积保护层(5)，该保护层(5)同时填充在侧壁槽(4a)内。
  9. 根据权利要求8所述的制造方法，其特征在于：在所述步骤e)与步骤f)之间，还包括将弯曲部(3a)上方位置的第二膜层刻蚀去除的步骤，以及对背极(7)进行刻蚀，以形成气流导通孔(7a)的步骤。
  10. 根据权利要求6所述的制造方法，其特征在于：所述步骤f)中，还包括在背极(7)、基材(1)、振膜(3e)、弯曲部(3a)上沉积金属电极(6)的步骤。
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