WO2017086588A1

WO2017086588A1 - Deposition apparatus and deposition system using induction heating

Info

Publication number: WO2017086588A1
Application number: PCT/KR2016/010765
Authority: WO
Inventors: 박선순; 이해룡; 김영도; 지성훈; 홍원의
Original assignee: 주식회사 다원시스
Priority date: 2015-11-19
Filing date: 2016-09-26
Publication date: 2017-05-26
Also published as: KR20170058610A; TW201730359A; KR101769547B1; CN107043910B; CN107043910A

Abstract

The present invention relates to a deposition apparatus and deposition system using induction heating. A deposition apparatus (100) according to the present invention is a deposition apparatus (100) using induction heating, and comprises a chamber (110) and an induction heating part (140), wherein a source substrate (120) is induction-heated by the induction heating part (140), and a deposition material layer (125) formed on at least one surface of the source substrate (120) is deposited on a substrate (130) to be deposited, which is disposed to be opposite to the one surface.

Description

Deposition Apparatus and Deposition System Using Induction Heating

The present invention relates to a deposition apparatus and deposition system using induction heating. More specifically, a deposition apparatus and a deposition system using induction heating to perform deposition by contactless heating using induction heating to implement deposition on a large area substrate, and improve the use efficiency of the deposition material and the uniformity of the deposition film. will be.

In order to manufacture a flat panel display, a semiconductor device, and the like, a process of depositing a thin film required on a substrate is indispensable. The manufacture of a flat panel display includes the process of depositing an organic substance or an inorganic substance, and the manufacture of a semiconductor element a metal. Organic materials include liquid crystal display (LCD), organic electroluminescence display (OELD), and inorganic devices include plasma display panel (PDP) and field emission display. Field emission display (FED).

Deposition methods are largely classified into chemical vapor deposition (CVD) and physical vapor deposition (PVD). Chemical vapor deposition utilizes chemical reactions of source gases. In addition, physical vapor deposition uses a physical apparatus, and includes vacuum thermal evaporation, ion-plating, sputtering, and the like. Such a deposition method may be selectively used according to the type of the deposition target and the conditions of the process, and each method requires a different deposition apparatus.

1 shows a schematic configuration of a conventional deposition apparatus 1. Referring to FIG. 1, a conventional deposition apparatus 1 is disposed in a chamber 2, a lower portion of the chamber 2, and a steam by heating the crucible 3 and the crucible 3 to receive the deposition material 5. The oxidized deposition material 5 includes a substrate 10 that adheres to the surface, and a mask 4 disposed between the substrate 10 and the crucible 3 to expose a portion to be deposited of the substrate 10.

Since the conventional deposition apparatus 1 as described above has to repeat the process of heating and depositing the crucible, there is a problem in that continuous deposition cannot be performed. In addition, the larger the substrate, the larger the mask 4 should be. At this time, the larger the mask 4, the larger the deflection phenomenon, and the alignment of the mask 4 is not performed properly. There was a problem that it is difficult to form a thin film. In addition, there is a problem in that the consumption amount of the deposition material 5 is large, in particular, the organic material used for the deposition of the OLED is more expensive, there is a problem that the increase in the use of the organic material immediately leads to an increase in the production cost.

Meanwhile, in order to avoid the above problem, wet coating may be used. The wet process has advantages in that a thin film is easily formed on a large area substrate and the production cost is reduced because the amount of the thin film forming material is consumed less. However, the wet process has a lot of limitations in material selection, and there is a problem in that the properties of the device manufactured by the wet process are not good.

Therefore, there is a need for a deposition apparatus that can be applied to a large-area substrate, can lower production costs, and can improve thin film quality.

Accordingly, an object of the present invention is to provide a deposition apparatus and a deposition system capable of realizing large-area deposition with a simple equipment configuration, which are devised to solve the above problems of the prior art.

It is also an object of the present invention to provide a deposition apparatus and a deposition system capable of improving the use efficiency of the deposition material.

In addition, an object of the present invention is to provide a deposition apparatus and a deposition system that can improve the deposition process speed and the quality of the deposited film.

The above object of the present invention is a deposition apparatus using induction heating, comprising a chamber and an induction heating unit, wherein a source substrate is inductively heated by the induction heating unit, and the deposition material layer formed on at least one surface of the source substrate on the one surface. It achieves by the vapor deposition apparatus characterized by depositing on the target board | substrate arrange | positioned opposingly.

The chamber interior may be a vacuum atmosphere.

The material of the source substrate may be a conductor or a semiconductor, and the deposition material layer may be vaporized by the induction heating to be deposited on the target substrate.

A shadow mask may be interposed between the source substrate and the target substrate.

The deposition material layer of the source substrate may be formed using wet coating.

The deposition material layer may be formed on the source substrate in a pattern.

A deposition pattern layer may be further formed between the source substrate and the deposition material layer.

The material of the deposition pattern layer may be a conductor or a semiconductor, and the material of the source substrate may be an insulator, and the deposition material layer existing on the deposition pattern layer may be vaporized and deposited on the target substrate by the induction heating. .

The source substrate may have a size equal to or larger than that of the target substrate.

In addition, the above object of the present invention, a deposition system using induction heating, comprising a source coating apparatus, a deposition apparatus and a transfer unit, the source coating apparatus using at least one surface of the source substrate using wet coating (Wet Coating) A layer of a deposition material, wherein the transfer unit transfers the source substrate from the source coating apparatus to the deposition apparatus, the deposition apparatus including a chamber and an induction heating unit, wherein the source substrate is inductively heated by the induction heating unit. And depositing a deposition material layer formed on at least one surface of the source substrate onto a target substrate disposed to face the one surface.

In addition, the above object of the present invention is a deposition method using induction heating, comprising: (a) forming a deposition material layer on at least one surface of a source substrate using a wet coating; (b) placing the source substrate in a chamber in a vacuum atmosphere; And (c) inductively heating the source substrate to deposit the vaporized deposition material layer on a target substrate disposed opposite the source substrate.

According to the present invention configured as described above, there is an effect that can realize a large area deposition in a simple equipment configuration.

In addition, according to the present invention, there is an effect that can improve the use efficiency of the deposition material.

In addition, according to the present invention, there is an effect that can improve the deposition process speed and the quality of the deposited film.

1 is a schematic view of a conventional deposition apparatus.

2 is a schematic view showing a deposition apparatus using induction heating according to an embodiment of the present invention.

3 is a view showing a deposition process according to an embodiment of the present invention.

4 is a schematic view showing a deposition apparatus using induction heating according to another embodiment of the present invention.

5 is a view showing a deposition process according to another embodiment of the present invention.

6 is a schematic diagram illustrating a deposition system according to an embodiment of the present invention.

100: deposition apparatus

110, 210: chamber

120: source substrate

125, 127: deposition material layer

129: deposition pattern layer

130: target substrate

140: induction heating part

200: source coating device

300: transfer unit

DETAILED DESCRIPTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain shapes, structures, and characteristics described herein may be embodied in other embodiments without departing from the spirit and scope of the invention with respect to one embodiment. In addition, it is to be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. In the drawings, like reference numerals refer to the same or similar functions throughout the several aspects, and length, area, thickness, and the like may be exaggerated for convenience.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

In the present specification, the target substrate on which deposition is performed should be understood as a concept including all substrates used for flat panel displays, semiconductor devices, and the like. However, in the present specification, a substrate applied to the OLED is described.

In addition, in the present specification, the deposition material is to be understood as a concept including all materials capable of performing deposition such as organic materials, inorganic materials, and metals. In the present specification, an organic material (organic material) for an organic light emitting display device will be described.

In addition, in the present specification, induction heating refers to a high frequency alternating current flowing through the coil to form a magnetic field that changes within the coil, and an induction current (eddy current) is formed in the material affected by the magnetic field. It should be understood that it means a phenomenon in which heat is generated.

2, the deposition apparatus 100 includes a chamber 110 and an induction heating unit 140.

The chamber 110 provides a space in which deposition is performed, and the inside of the chamber 110 is preferably a vacuum atmosphere. A vacuum pump (not shown) may be connected to one side of the chamber 110 to form a vacuum atmosphere. In a vacuum atmosphere, the deposition material to be described later may vaporize and diffuse with straightness.

Meanwhile, an entrance (not shown), which is a passage for loading / unloading the source substrate 120 and the target substrate 130, may be formed at one side of the chamber 110, and a door (not shown) opening or closing the entrance may be provided. More can be installed. A sealing member (not shown) may be interposed between the door and the entrance to seal the inside of the chamber 110 from the outside.

The source substrate 120 is a substrate that provides a deposition material deposited on the target substrate 130, and may be electromagnetic induction from the induction heating unit 140, which will be described later. In this specification, the source substrate 120 is electromagnetically induced, it should be understood that the source substrate 120 itself is not only electromagnetically induced, but also includes a material formed on the source substrate 120 is electromagnetically induced. . To this end, the material of the source substrate 120 may be a conductor or a semiconductor. When the material of the source substrate 120 is a non-conductor, the material formed on the source substrate 120 may be a conductor or a semiconductor. Examples of the conductor include metal, carbon, and the like, and semiconductors include silicon, germanium, gallium arsenide, and molten silica.

The deposition material layer 125 may be formed on at least one surface of the source substrate 120. FIG. 2 illustrates that the deposition material layer 125 is formed on the top surface of the source substrate 120, but if the surface on which the deposition material layer 125 is formed is within a range disposed to face the target substrate 130 to be described later. It may be formed in part or in whole. In addition, the deposition material layer 125 may be formed in a pattern on the source substrate 120. The pattern is preferably the same as the pattern of the deposition film 131 (see FIG. 3B) to be formed on the target substrate 130. Alternatively, a deposition film 131 having a pattern may be formed between the source substrate 120 and the target substrate 130 through a shadow mask (not shown).

The deposition material layer 125 may be formed of an organic material, an inorganic material, a metal, or the like, which is vaporized to perform deposition, and the thickness of the deposition material layer 125 may be set according to the thickness of the deposition film to be performed. In addition, the deposition material layer 125 may be formed using a wet coating so that the deposition material layer 125 may be uniformly formed on the large-area source substrate 120 while using less deposition material. It is preferable to form at 120. The wet coating can use any known method such as spin coating and Dr. blade without limitation.

As the source substrate 120 is heated by electromagnetic induction, the deposition material layer 125 may be heated to vaporize, and the vaporized deposition material may be deposited on the target substrate 130.

The target substrate 130 is a substrate on which the deposition material is deposited and may be disposed to face one surface of the source substrate 120 on which the deposition material layer 125 is formed. The target substrate 130 is preferably disposed close to the source substrate 120 to several tens of micrometers or less.

If the target substrate 130 is a large area substrate used for a flat panel display, the source substrate 120 also preferably has a corresponding large area. Preferably, since the source substrate 120 is formed to be the same as or larger than the target substrate 130, all of the deposition materials vaporized from the source substrate 120 may be deposited on the target substrate 130.

Induction heating unit 140 may electromagnetically induce the source substrate 120. To this end, the induction heating unit 140 may be installed in a form in which a coil is wound therein. The induction heating unit 140 may electromagnetically induce the source substrate 120 in a state of being spaced or in contact with the source substrate 120. The induction heating unit 140 may be connected to an external power supply unit (not shown) to receive energy for electromagnetic induction.

On the other hand, the induction heating unit 140 may be configured in a shape in which the center is in communication (ring, donut, cylindrical shape, etc.), the source substrate 120 may be located in the communication center. In this case, a source substrate elevating unit for moving the source substrate 120 up and down may be further disposed in the chamber 110 so that the source substrate 120 may be located at the communication center of the induction heating unit 140.

3 is a view showing a deposition process according to an embodiment of the present invention. In FIG. 3, only portions of the source substrate 120 and the target substrate 130 are illustrated and the remaining components are not shown for convenience of description.

As shown in FIG. 3A, the source substrate 120 and the target substrate 130 may be disposed to face each other. The deposition material layer 125 may be formed on at least one surface of the source substrate 120. In the drawing, the source substrate 120 is disposed below the target substrate 130, but the positions thereof may be interchanged.

When the source substrate 120 is electromagnetically induced through the induction heating unit 140, an induction current is formed inside the source substrate 120 formed of a conductor or a semiconductor, and the source substrate 120 may be inductively heated to a high temperature. . Thus, the deposition material layer 125 on the source substrate 120 may be vaporized by induction heating of the source substrate 120.

Subsequently, as shown in FIG. 3B, the vaporized deposition material layer 125 may be diffused in a vacuum atmosphere within the chamber 110. Since the deposition material vaporized in a vacuum state is linear and diffuses, the deposition material may be deposited on the lower surface of the target substrate 130 as it is. In this case, when the deposition material layer 125 is formed on the source substrate 120 in a pattern, the deposition film 131 may be formed on the lower surface of the target substrate 130 as it is. In addition, when a shadow mask (not shown) is further interposed between the source substrate 120 and the target substrate 130, a deposition film 131 corresponding to the pattern of the shadow mask may be formed.

4 is a schematic view showing a deposition apparatus 100 using induction heating according to another embodiment of the present invention. In the embodiment of FIG. 4, the chamber 110, the target substrate 130, and the induction heating unit 140 are the same as the embodiment of FIG. 2, and thus detailed description thereof will be omitted.

Referring to FIG. 4, a deposition pattern layer 129 may be further formed between the source substrate 120 and the deposition material layer 127. Specifically, after the deposition pattern layer 129 is first formed on the source substrate 120, the deposition material layer 127 may be formed thereon.

The pattern shape of the deposition pattern layer 129 is preferably the same as the pattern of the deposition film 132 (refer to FIG. 5B) to be formed. In order to electromagnetically induce only the deposition material layer 127 except for the source substrate 120 in the induction heating unit 140, the deposition pattern layer 129 may be a conductor or a semiconductor. Examples of the conductor include metal, carbon, and the like, and semiconductors include silicon, germanium, gallium arsenide, and molten silica. In this case, the material of the source substrate 120 is preferably a non-conductor.

The deposition pattern layer 129 may use any known thin film formation method without limitation. However, when the deposition material layer 127 is formed after the deposition pattern layer 129 is formed, the deposition material layer 127 is uniformly formed on the large-scale source substrate 120 while using less deposition material. In order to do so, it is preferable to use wet coating.

5 is a view showing a deposition process according to another embodiment of the present invention. In FIG. 5, only portions of the source substrate 120 and the target substrate 130 are illustrated and the remaining components are not shown for convenience of description.

As shown in FIG. 5A, the source substrate 120 and the target substrate 130 may be disposed to face each other. The deposition pattern layer 129 is formed on one surface of the source substrate 120, and the surface on which the deposition pattern layer 129 is formed should face the target substrate 130. Although the source substrate 120 is disposed below the target substrate 130 in the drawing, the source substrate 120 and the target may be in a range where the surface on which the deposition pattern layer 129 is formed faces the target substrate 130. The position of the substrate 130 may be interchanged.

When the deposition pattern layer 129 except for the source substrate 120 is electromagnetically induced through the induction heating unit 140, an induction current may be heated in the deposition pattern layer 129 made of a conductor or a semiconductor. Thus, the deposition material layer 127 ′ positioned directly on the deposition pattern layer 129 may be vaporized by induction heating of the deposition pattern layer 129.

Subsequently, as shown in FIG. 5B, the vaporized deposition material layer 127 ′ may be diffused in a vacuum atmosphere within the chamber 110. Since the deposition material vaporized in a vacuum state is linear and diffuses, the deposition material may be deposited on the lower surface of the target substrate 130 as it is. As the pattern of the deposition pattern layer 129 is deposited, the deposition material layer 127 ′ may be vaporized to form a deposition layer 132.

Hereinafter, a deposition system including the deposition apparatus 100 of the present invention will be described.

Referring to FIG. 6, the deposition system includes a deposition apparatus 100, a source coating apparatus 200, and a transfer unit 300.

Since the deposition apparatus 100 of the present embodiment has the same configuration as the deposition apparatus 100 of FIG. 2, a detailed description thereof will be omitted.

The chamber 210 of the source coating apparatus 200 provides a space in which the wet coating is performed. In the chamber 210, a process of forming the deposition material layers 125 and 127 on at least one surface of the source substrate 120 may be performed. In order to form the deposition material layers 125 and 127 uniformly on the large-area source substrate 120 while using less deposition material, the deposition material layers 125 and 127 may be formed by using wet coating. It is preferable to form the source substrate 120. The wet coating can use any known method such as spin coating and Dr. blade without limitation. 6, the deposition material layers 125 and 127 are formed on the top surface of the source substrate 120, but the deposition material layers 125 and 127 may be formed on a portion or the entire surface of the source substrate 120 during the wet coating process. It may be formed. Even in this case, since the deposition material vaporized in a vacuum state is diffused in a straight line, only the deposition material layers 125 and 127 of the source substrate 120 formed on the surface facing the target substrate 130 are the target substrate 130. It may be deposited on the lower surface of the) as it is.

The transfer unit 300 may load the source substrate 120 on which the deposition material layer 125 is formed from the source coating apparatus 200 to the deposition apparatus 100, and the target substrate on which the deposition process is completed from the deposition apparatus 100 ( 130 can be unloaded. The transfer unit 300 may be implemented in various forms. That is, the transfer unit 300 may be configured of a linear motor, a guide rail, a transfer robot, a conveyor belt, a transfer roller, a vacuum chuck, air transfer, and the like.

As described above, the deposition apparatus 100 using the induction heating of the present invention heats the source substrate 120 on which the deposition material layer 125 is formed to vaporize the deposition material layer 125, and thus with a small amount of deposition material. There is also an effect that can perform deposition.

In addition, since the deposition apparatus 100 using the induction heating of the present invention can quickly increase only a desired heating target by using the induction heating method, the deposition process may be performed quickly.

In addition, in the deposition system using the induction heating of the present invention, the deposition material layer 125 may be easily formed on the source substrate 120 having a large area by using a wet coating in the source coating apparatus 200. It is effective to realize large area deposition by using a simple equipment configuration.

Although the present invention has been shown and described with reference to preferred embodiments as described above, it is not limited to the above embodiments and various modifications made by those skilled in the art without departing from the spirit of the present invention. Modifications and variations are possible. Such modifications and variations are intended to fall within the scope of the invention and the appended claims.

Claims

A vapor deposition apparatus using induction heating,

Chamber and induction heating,

And a source substrate is inductively heated by the induction heating unit, and a deposition material layer formed on at least one surface of the source substrate is deposited on a target substrate disposed to face the one surface.
The method of claim 1,

Deposition apparatus, characterized in that the inside of the chamber is a vacuum atmosphere.
The method of claim 1,

The material of the source substrate is a conductor or a semiconductor,

And the deposition material layer is vaporized by the induction heating and deposited on the target substrate.
The method of claim 1,

And a shadow mask is interposed between the source substrate and the target substrate.
The method of claim 1,

And the deposition material layer of the source substrate is formed using wet coating.
The method of claim 1,

And the deposition material layer is formed on the source substrate in a pattern.
The method of claim 1,

And a deposition pattern layer is further formed between the source substrate and the deposition material layer.
The method of claim 7, wherein

The material of the deposition pattern layer is a conductor or a semiconductor,

The material of the source substrate is an insulator,

And the deposition material layer existing on the deposition pattern layer is vaporized and deposited on the target substrate by the induction heating.
The method of claim 1,

And the source substrate has a size equal to or larger than that of the target substrate.
A deposition system using induction heating,

A source coating apparatus, a deposition apparatus and a conveying unit,

The source coating apparatus forms a deposition material layer on at least one surface of the source substrate by using wet coating,

The transfer unit transfers the source substrate from the source coating apparatus to the deposition apparatus,

The vapor deposition apparatus,

Chamber and induction heating,

And the source substrate is inductively heated by the induction heating unit, and deposits a deposition material layer formed on at least one surface of the source substrate to a target substrate disposed to face the one surface.
The method of claim 10,

The chamber interior of the deposition apparatus is a vacuum atmosphere.
The method of claim 10,

The material of the source substrate is a conductor or a semiconductor,

And the deposition material layer is vaporized by the induction heating and deposited on the target substrate.
The method of claim 10,

And a shadow mask is interposed between the source substrate and the target substrate.
The method of claim 10,

And the deposition material layer is formed on the source substrate in a pattern.
The method of claim 10,

And a deposition pattern layer is further formed between the source substrate and the deposition material layer.
The method of claim 15,

The material of the deposition pattern layer is a conductor or a semiconductor,

The material of the source substrate is an insulator,

And the deposition material layer present on the deposition pattern layer is vaporized and deposited on the target substrate by the induction heating.
As a deposition method using induction heating,

(a) forming a layer of deposition material on at least one side of the source substrate using a wet coating;

(b) placing the source substrate in a chamber in a vacuum atmosphere; And

(c) inductively heating the source substrate to deposit the vaporized deposition material layer on a target substrate disposed opposite the source substrate;

Deposition method comprising a.