KR20110016769A - Apparatus and method for deposition via joule heating - Google Patents

Abstract

PURPOSE: A deposition apparatus and a method thereof using the joule heating are provided to be suitable for the mass production by implementing the deposition process in short time by enabling the continuous deposition. CONSTITUTION: A source substrate(10) comprises a conductive layer(21) formed in pattern to be deposited and a deposition target layer(31) to cover the conductive layer. A target substrate(50) is arranged to be faced with the source substrate. A transport unit loads and unloads the source substrate and the target substrate to and from the chamber.

Description

Apparatus and method for deposition via joule heating}

TECHNICAL FIELD This technique relates to deposition apparatus and methods, and more particularly, to deposition apparatus and methods using Joule heating in a mass production system that can improve the space utilization of the equipment and the processing speed of the process.

The deposition process is performed in a manufacturing process of a semiconductor device, a manufacturing process of a flat panel display, and the like.

That is, manufacturing of a semiconductor device includes a process of depositing a metal such as titanium (Ti), tungsten (W), aluminum (Al), copper (Cu), or the like on a substrate. In addition, the manufacture of flat panel displays includes the process of depositing organic or inorganic materials on a substrate. Inorganic materials include plasma display panels (PDPs) and field emission displays (FEDs), and organic materials include liquid crystal displays (LCDs) and organic light emitting displays. (OELD: Organic Electro Luminescence Display).

Deposition methods are classified into chemical vapor deposition (CVD) and physical vapor deposition (PVD). Chemical vapor deposition utilizes chemical reactions of source gases. In addition, physical vapor deposition uses a physical apparatus, and includes vacuum thermal evaporation, ion plating, sputtering, and the like. Such a deposition method may be selectively used according to the type of the deposition target and the conditions of the process, and each method requires a different deposition apparatus.

1 shows a schematic configuration of a conventional deposition apparatus. As shown in FIG. 1, the deposition apparatus 100 includes a chamber 110 in which a vacuum is formed, a crucible 120 disposed below the chamber 110 to accommodate a deposition object 121, and a crucible 120. A shadow mask is disposed between the substrate 130 and the crucible 120 to which the deposition object 121 vaporized by heating is disposed between the substrate 130 and the crucible 120. 140).

However, the conventional deposition apparatus has a disadvantage in that the configuration is complicated.

In addition, the conventional deposition method has a disadvantage that it is impossible to perform a continuous deposition, as the process of heating and depositing the crucible in the chamber is repeated.

In addition, in the conventional deposition apparatus and method, there is a disadvantage that the substrate sag under load when the substrate is enlarged.

In order to solve such a conventional problem, the present invention provides a deposition apparatus and method using Joule heating that can improve the space use capacity of the equipment and the processing speed of the process, and can perform deposition on a large area substrate effectively.

The deposition apparatus using Joule heating includes a chamber, a source substrate having a deposition target layer formed to cover the conductive layer and a conductive layer formed on a pattern to be deposited on one surface, a target substrate disposed to face the source substrate, a source substrate and A transfer unit for loading and unloading the target substrate into the chamber, and a power supply for generating heat to the conductive layer by applying power to the conductive layer.

In addition, according to another aspect, a deposition apparatus using Joule heating includes a chamber, a source substrate having a conductive layer and a barrier layer having a concave portion toward the conductive layer in a pattern to be deposited, and a source substrate on one surface thereof, a source substrate, The target substrate is disposed to face each other, a transfer unit for loading and unloading the source substrate and the target substrate into the chamber, and a power supply unit generating heat to the conductive layer by applying power to the conductive layer.

In this case, the transfer part may include a socket part connected to the power supply part and electrically connected to the conductive layer.

Meanwhile, a deposition method using Joule heating includes preparing a source substrate having a conductive layer formed in a pattern to be deposited and a deposition target layer formed on one surface to cover the conductive layer, and preparing a target substrate to face the source substrate. Loading the source substrate and the target substrate into the chamber, heating the conductive layer, and heating the conductive layer to vaporize the deposition target layer located on one surface of the conductive layer facing the target substrate. Depositing onto the target substrate and unloading the source substrate and the target substrate from the chamber.

In addition, a deposition method using Joule heating according to another aspect, the method comprising the steps of preparing a source substrate having a conductive layer and a partition layer having a concave portion toward the conductive layer and the deposition target layer in order on the surface in order to deposit; Preparing a target substrate to face the substrate, loading the source substrate and the target substrate into the chamber, heating the conductive layer, and vaporizing the deposition object layer positioned in the recess by heat generation of the conductive layer. And depositing on the target substrate, and unloading the source substrate and the target substrate from the chamber.

In this case, in the loading step, the source substrate and the target substrate may be transported side by side in a horizontal state.

In addition, in the loading step, the source substrate and the target substrate may be transferred side by side in a vertical position.

In addition, the loading step may include supporting the source substrate with the socket portion to be electrically connected to the conductive layer.

Therefore, the structure of the vapor deposition apparatus becomes very simple, the space is excellent, and the vapor deposition apparatus can be efficiently installed in a small space.

In addition, it is possible to perform a continuous deposition, it is possible to perform a large amount of deposition process in a short time, which is suitable for mass production.

In addition, since deformation such as deflection due to the load of the substrate does not occur, it can be effectively applied to the deposition of a large-area substrate, and particles that can intervene in the chamber are not attached to the substrate, thereby reducing defects.

Hereinafter, the technical configuration of the deposition apparatus using Joule heating according to the accompanying drawings in detail as follows.

2 illustrates a schematic configuration of a deposition apparatus using Joule heating according to an embodiment, and FIG. 3 is an enlarged view of "A" illustrated in FIG. 2.

2 and 3, the deposition apparatus 1 includes a chamber 40, a source substrate 10, a target substrate 50, a transfer unit 80, and a power supply unit (not shown). do.

The chamber 40 has a vacuum formed therein.

The source substrate 10 is made of an insulating material, and has a conductive layer 21 and a deposition target layer 31 on one surface.

The conductive layer 21 is formed on one surface of the source substrate 10 in a pattern to be deposited. The conductive layer 21 is preferably made of molybdenum (Mo), chromium (Cr), tungsten (W) and the like. The conductive layer 21 is applied to a power source and heated to high temperature by resistance heat. In addition, the deposition target layer 31 may be formed on the entire surface of the source substrate 10 to cover the conductive layer 21. The deposition target layer 31 is used as a raw material for deposition, and may be formed of an organic material, an inorganic material, and a metal.

The target substrate 50 is disposed to face the source substrate 10. That is, the target substrate 50 is disposed to face the deposition target layer 31 formed on the source substrate 10. In this case, the target substrate 50 is preferably disposed close to the source substrate 10 to several tens of micrometers or less.

The transfer unit 80 loads and unloads the source substrate 10 and the target substrate 50 into the chamber 40. The transfer unit 80 may be implemented in various forms. That is, the transfer unit 80 may be formed of a linear motor, a guide rail, a transfer robot, a conveyor belt, a transfer roller, a vacuum chuck, air transfer, and the like.

The power supply unit is connected to the conductive layer 21 to apply power. The conductive layer 21 supplied with the power by the power supply unit generates heat at a high temperature.

4A and 4B illustrate a deposition process according to the embodiment of FIG. 3.

As shown in FIG. 4A, the target substrate 50 is disposed to face the source substrate 10. According to the drawing, although the target substrate 50 is disposed on the upper portion of the source substrate 10, the two substrates 10 and 50 may be changed up and down positions. When power is applied to the conductive layer 21, the conductive layer 21 is heated to a high temperature by the heat of resistance. Therefore, the vapor deposition object layer 31 ′ positioned on the upper surface of the conductive layer 21 is vaporized by the heating of the conductive layer 21.

As shown in FIG. 4B, the vaporized deposition object layer 31 ′ is diffused in a vacuum atmosphere in the chamber 40. The diffused deposition target layer 31 ′ is deposited on the lower surface of the target substrate 50 disposed very close to the top of the source substrate 10. Since the vapor deposition object layer 31 ′ vaporized in a vacuum state is diffused in a straight line, the vapor deposition object layer 31 ′ is deposited on the target substrate 50 in a pattern of the conductive layer 21. Therefore, the deposition target may be formed in a pattern to be deposited on the target substrate 50.

Thus, the deposition apparatus 1 using Joule heating can be made in a very simple configuration. In addition, the deposition target layer 31 may be easily applied or deposited on the source substrate 10 using various coating methods or deposition methods. In this case, it is possible to form the deposition target layer 31 on the source substrate 10 with a uniform thickness. Therefore, the thickness of the deposition target layer 31 deposited on the target substrate 50 becomes uniform.

In particular, the source substrate 10 and the target substrate 50 are transferred side by side into the chamber 40 by the transfer unit 80, the source substrate 10 and the target substrate 50 after the deposition process in the chamber 40 is It is transported out of the chamber 40 and discharged. After completing one deposition cycle, another source substrate and a target substrate are loaded, deposited, and unloaded into the chamber 40. Therefore, the deposition apparatus 1 using Joule heating can perform many deposition processes in a short time, and can be effectively applied to mass production systems.

 5 is a flowchart of a deposition method using Joule heating according to an embodiment.

As shown in FIG. 5, the deposition method using Joule heating includes preparing a source substrate on which a conductive layer and a deposition target layer are formed (S100), preparing a target substrate (200), and a source substrate and a target substrate. Loading the substrate into the chamber (S300), heating the conductive layer (S400), vaporizing the deposition target layer (S500), and unloading the source substrate and the target substrate from the chamber. It includes the step (S600).

Referring to FIGS. 2 and 3, in step S100, a source substrate 10 having a conductive layer 21 and a deposition target layer 31 formed on one surface is prepared. The conductive layer 21 is formed in a pattern to be deposited on one surface of the source substrate 10, and the deposition target layer 31 is formed on one surface of the source substrate 10 to completely cover the conductive layer 21. The conductive layer 21 and the deposition target layer 31 may be formed by various methods such as deposition, coating, and coating.

In operation S200, the target substrate 50 is prepared to face the source substrate 10.

In step S300, the source substrate 10 prepared in step S100 and the target substrate 50 prepared in step S200 are loaded into the chamber 40 in which the vacuum is formed.

In operation S400, power is applied to the conductive layer 21 to heat the conductive layer 21. Supply of power may be made by a power supply. The conductive layer 21 to which power is applied is heated to a high temperature within a short time. For example, when several tens of kilowatts / cm 2 of electric power is supplied to the conductive layer 21 for a time of several kilowatts to several hundred microwatts, the conductive layer 21 may generate instantaneous heat above 1000 ° C.

In operation S500, the deposition target layer 31 is deposited on the target substrate 50. That is, when the conductive layer 21 generates heat, the deposition target layer 31 positioned on one surface of the conductive layer 21, that is, on one surface of the conductive layer 21 facing the target substrate 50, is vaporized. Thereafter, the vaporized deposition object layer 31 is diffused in the chamber 40 which is a vacuum and deposited on the lower surface of the target substrate 50.

In operation S600, the source substrate 10 and the target substrate 50 on which the deposition process is completed are unloaded from the chamber 40.

When a series of deposition cycles consisting of the steps (S100) to (S600) is completed, the process may return to step S100 again and repeat the deposition process.

6 is an enlarged cross-sectional view of a source substrate and a target substrate according to another embodiment.

Since the deposition apparatus using Joule heating according to another embodiment has the same components as the deposition apparatus illustrated in FIG. 2 and only the configuration of the source substrate, it will be described with reference to FIGS. 2 and 6.

 As shown in FIGS. 2 and 6, the deposition apparatus 1 includes a chamber 40, a source substrate 10, a target substrate 50, a transfer unit 80, and a power supply unit (not shown). do. The chamber 40, the target substrate 50, the transfer unit 80, and the power supply unit are the same as those of the above-described embodiment, and thus description thereof is omitted.

The source substrate 10 is made of an insulating material, and includes a conductive layer 21, a partition layer 71, and a deposition target layer 31 on one surface thereof in this order.

The conductive layer 21 may be formed in the form of a thin film on the upper surface of the source substrate 10 and may be formed to cover the entire upper surface of the source substrate 10. The conductive layer 21 is preferably made of molybdenum (Mo), chromium (Cr), tungsten (W) and the like. The conductive layer 21 is heated by resistance heat by receiving power.

The partition layer 71 has a recessed portion 711. The recessed part 711 is recessed toward the conductive layer 21, and the upper surface of the partition layer 71 has a concave-convex shape. That is, the recessed portion 711 is recessed downward from the upper surface of the partition layer 71, and thus the recessed portion 711 is closer to the conductive layer 21 than the non- recessed portion 712 of the partition layer 71. Is located. In addition, the recess 711 is formed of a pattern to be deposited. The concave inlet 711 may be in the shape of a groove as shown, and may be in the shape of a hole penetrating both sides of the barrier layer 71 although not shown.

In this case, the partition layer 71 is made of an insulating material, and preferably made of glass or ceramic material. In addition, the partition layer 71 is preferably formed in the form of a thin film in contact with the upper surface of the conductive layer 21. For example, the barrier layer 71 may be formed by coating and sintering a glass or ceramic material in a pattern to be deposited on the upper surface of the conductive layer 21. In addition, the partition layer 71 may be formed by attaching the upper surface of the conductive layer 21 after forming the concave portion 711 in a pattern to be deposited on a plate member made of glass or ceramic material.

The deposition target layer 31 is formed on one surface of the barrier layer 71. In this case, the deposition target layer 31 may be formed on the entire upper surface of the barrier layer 71. That is, the deposition object layer 31 may be formed on the recessed portion 711 and the non-recessed portion 712 of the partition layer 71. The deposition target layer 31 is used as a raw material for deposition, and may be formed of an organic material, an inorganic material, and a metal.

FIG. 7 illustrates a deposition process according to the embodiment of FIG. 6.

6 and 7, the target substrate 50 is disposed to face the source substrate 10. When power is applied to the conductive layer 21, the conductive layer 21 is heated to a high temperature by the heat of resistance. Therefore, the partition layer 71 located above the conductive layer 21 is heated. In this case, the recessed portion 711 of the partition layer 71 is closer to the conductive layer 21 than the non-corrugated portion 712, so that the recessed portion 711 has a higher temperature than the non-corrugated portion 712.

As a result, the deposition object layer 31 ′ positioned in the recess 711 is vaporized by the high temperature. The vaporized deposition object layer 31 ′ is diffused in a vacuum atmosphere in the chamber 40. The diffused deposition target layer 31 ′ is deposited on the lower surface of the target substrate 50 disposed very close to the top of the source substrate 10. Since the vapor deposition target layer 31 ′ vaporized in a vacuum state is diffused in a straight line, the vapor deposition target layer 31 ′ is deposited on the target substrate 50 in the pattern of the recess 711. Therefore, the deposition target may be formed in a pattern to be deposited on the target substrate 50.

Therefore, during deposition, the deposition object layer 31 ′ positioned in the recess 711 may be guided upward by the inner wall of the recess 711 to be diffused in a state in which straightness is guaranteed. Thus, more precise pattern deposition can be performed.

8 is a flowchart of a deposition method using Joule heating according to another embodiment.

As shown in FIG. 8, the deposition method using Joule heating includes preparing a source substrate on which a conductive layer, a barrier layer, and a target layer are formed (S100), preparing a target substrate (200), and a source substrate. And loading the target substrate into the chamber (S300), heating the conductive layer (S400), vaporizing the deposition target layer and depositing the target substrate on the target substrate (S500), the source substrate and the target substrate into the chamber. Unloading from (S600).

Referring to FIGS. 2 and 6, in step S100, the source substrate 10 having the conductive layer 21, the partition layer 71, and the object layer 31 to be deposited is prepared. The conductive layer 21 is formed on one surface of the source substrate 10. The partition layer 71 is formed on the conductive layer 21, and has a recess 711 in a pattern to be deposited. The deposition target layer 31 is formed over the recessed portion 711 and the non- recessed portion 712 of the partition layer 71. The conductive layer 21, the partition layer 71, and the object layer 31 to be deposited may be formed by various methods such as deposition, coating, and coating.

In operation S200, the target substrate 50 is prepared to face the source substrate 10.

In step S300, the source substrate 10 prepared in step S100 and the target substrate 50 prepared in step S200 are loaded into the chamber 40 in which the vacuum is formed.

In operation S400, power is applied to the conductive layer 21 to heat the conductive layer 21. Supply of power may be made by a power supply. The conductive layer 21 to which power is applied is heated to a high temperature within a short time. For example, when several tens of kilowatts / cm 2 of electric power is supplied to the conductive layer 21 for a time of several kilowatts to several hundred microwatts, the conductive layer 21 may generate instantaneous heat above 1000 ° C. As another example, the power supply time can be set in the range of several hundreds of microseconds to several microseconds, and it is also possible to set the reached temperature of the conductive layer 21 in the range of 400 to 800 degreeC.

In operation S500, the deposition target layer 31 is deposited on the target substrate 50. That is, when the conductive layer 21 generates heat at a high temperature, the concave portion 711 of the partition layer 71 located close to the conductive layer 21 becomes a high temperature instantly. Therefore, the deposition object layer 31 ′ positioned in the concave portion 711 is vaporized. Thereafter, the vaporized deposition object layer 31 ′ is diffused in the vacuum chamber 40 and deposited on the lower surface of the target substrate 50.

In operation S600, the source substrate 10 and the target substrate 50 on which the deposition process is completed are unloaded from the chamber 40.

When a series of deposition cycles consisting of the steps (S100) to (S600) is completed, the process may return to step S100 again and repeat the deposition process.

9 illustrates a schematic configuration of a deposition apparatus using Joule heating according to a modification of FIG. 2.

As shown in FIG. 9, the transfer part 80 included in the deposition apparatus 1 may include a socket part 801. The socket 801 is connected to a power supply and functions as a terminal electrically connected to the conductive layer of the source substrate 10.

In addition, in the deposition method using Joule heating according to the embodiments shown in Figures 5 and 8, the loading step may include supporting the source substrate with a socket portion to be electrically connected to the conductive layer.

That is, the socket portion 801 is electrically connected to the conductive layer while supporting at least one side of the source substrate 10, and transfers the source substrate 10 by the transfer unit 80. In this case, the target substrate 50 may be supported and transported together with the socket 801 and may be transported by a separate grip means. Meanwhile, the socket 801 illustrated in FIG. 9 may be configured in the same manner as in the embodiment of FIG. 2.

Meanwhile, as shown in FIG. 9, the chamber 40 may be formed in a vertical type. That is, the source substrate 10 and the target substrate 50 may be disposed in the chamber 40 in a vertical position.

In summary, as in the embodiment of FIG. 2, the source substrate 10 and the target substrate 50 may be transported side by side in a horizontal state. In addition, as shown in the embodiment of FIG. 9, the source substrate 10 and the target substrate 50 may be transferred side by side in a vertical position.

When the source substrate 10 and the target substrate 50 are transferred side by side in a horizontal state, the transfer of the substrates 10 and 50 is facilitated and the handling of the transfer is improved, as well as the substrates ( 10) Alignment work of 50 is easy.

In addition, when the source substrate 10 and the target substrate 50 are transported side by side in a vertically upright state, the space occupied by the chamber can be reduced, and particles that can flow into the chamber are prevented from being seated on the substrate. Defects can be reduced. In addition, since deformation such as deflection of the substrate does not occur, it can be effectively applied to deposition of a large area substrate.

Up to now, the deposition apparatus and method using Joule heating have been described with reference to the embodiments shown in the drawings, which are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible. . Therefore, the true technical protection scope should be defined by the technical spirit of the appended claims.

1 shows a schematic configuration of a conventional deposition apparatus,

2 illustrates a schematic configuration of a deposition apparatus using Joule heating according to an embodiment,

3 is an enlarged view of "A" shown in FIG. 2,

4A and 4B illustrate a deposition process according to the embodiment of FIG. 3,

5 is a flowchart of a deposition method using Joule heating according to an embodiment;

6 is an enlarged cross-sectional view of a source substrate and a target substrate according to another embodiment;

FIG. 7 illustrates a deposition process according to the embodiment of FIG. 6.

8 is a flowchart of a deposition method using Joule heating according to another embodiment;

9 illustrates a schematic configuration of a deposition apparatus using Joule heating according to a modification of FIG. 2.

<Description of the symbols for the main parts of the drawings>

1: deposition apparatus 10: source substrate

21: conductive layer 31, 31 ': target layer for deposition

40: chamber 50: target substrate

60: power supply 71: partition layer

80: conveying part 711: concave part

801: socket

Claims (8)

chamber; A source substrate having a conductive layer formed in a pattern to be deposited and a deposition target layer formed to cover the conductive layer on one surface; A target substrate disposed to face the source substrate; A transfer unit configured to load and unload the source substrate and the target substrate into the chamber; And And a power supply unit generating heat to the conductive layer by applying power to the conductive layer. chamber; A source substrate having a conductive layer, a barrier rib layer having a concave portion toward the conductive layer in a pattern to be deposited, and a deposition target layer on one surface thereof in order; A target substrate disposed to face the source substrate; A transfer unit configured to load and unload the source substrate and the target substrate into the chamber; And And a power supply unit generating heat to the conductive layer by applying power to the conductive layer. The method according to claim 1 or 2, The transfer unit: And a socket part connected to the power supply part and electrically connected to the conductive layer. Preparing a source substrate having a conductive layer formed in a pattern to be deposited and a deposition target layer formed to cover the conductive layer on one surface; Preparing a target substrate to face the source substrate; Loading the source substrate and the target substrate into a chamber; Heating the conductive layer; Vaporizing the deposition target layer positioned on one surface of the conductive layer opposite to the target substrate by heat generation of the conductive layer, and depositing the vapor deposition on the target substrate; And And unloading said source substrate and said target substrate from said chamber. Preparing a source substrate having a conductive layer, a barrier rib layer having a concave portion toward the conductive layer in a pattern to be deposited, and a deposition target layer on one surface thereof; Preparing a target substrate to face the source substrate; Loading the source substrate and the target substrate into a chamber; Heating the conductive layer; Vaporizing the deposition target layer positioned in the concave portion by heat generation of the conductive layer and depositing the vapor deposition on the target substrate; And And unloading said source substrate and said target substrate from said chamber. The method according to claim 4 or 5, In the loading step, The source substrate and the target substrate is a deposition method using a joule heating is transferred side by side in a horizontal state. The method according to claim 4 or 5, In the loading step, The source substrate and the target substrate is a deposition method using a joule heating is transported side by side in a vertical position. The method according to claim 4 or 5, The loading step is: And supporting the source substrate with a socket portion to be electrically connected to the conductive layer.

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