WO2022175703A1 - Crucible, distribution pipe, material deposition assembly, vacuum deposition system and method of manufacturing a device - Google Patents
Crucible, distribution pipe, material deposition assembly, vacuum deposition system and method of manufacturing a device Download PDFInfo
- Publication number
- WO2022175703A1 WO2022175703A1 PCT/IB2021/051284 IB2021051284W WO2022175703A1 WO 2022175703 A1 WO2022175703 A1 WO 2022175703A1 IB 2021051284 W IB2021051284 W IB 2021051284W WO 2022175703 A1 WO2022175703 A1 WO 2022175703A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crucible
- spheroid
- counterpart
- flange
- height
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 162
- 238000000151 deposition Methods 0.000 title claims abstract description 116
- 230000008021 deposition Effects 0.000 title claims abstract description 108
- 238000009826 distribution Methods 0.000 title claims abstract description 98
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000001704 evaporation Methods 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 239000003870 refractory metal Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 description 71
- 230000008020 evaporation Effects 0.000 description 30
- 239000010410 layer Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 10
- 229910001092 metal group alloy Inorganic materials 0.000 description 8
- 239000007769 metal material Substances 0.000 description 8
- 238000000429 assembly Methods 0.000 description 5
- 230000000712 assembly Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 241000357437 Mola Species 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 238000001883 metal evaporation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
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- 239000012530 fluid Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Definitions
- Embodiments of the present disclosure relate to sealing of high temperature evaporators, particularly for metal or metal alloy evaporation. Further, embodiments relate to deposition of materials for OLED manufacturing. In particular, embodiments relate to evaporation of metals and metal alloys. Specifically, embodiments relate to an evaporation source, a material deposition assembly, e.g. an evaporation source array, and methods of manufacturing a device. Further, embodiments of the present disclosure relate to deposition apparatuses for depositing one or more layers, particularly layers including metals and metal alloys during OLED device manufacturing, on a substrate. In particular, embodiments of the present disclosure relate to a crucible, a distribution pipe, a material deposition assembly, a vacuum deposition system and methods of manufacturing a device.
- Metallic evaporators are tools used for the production of, for example, organic light-emitting diodes (OLED).
- OLEDs are a special type of light-emitting diode in which the emissive layer comprises a thin- film of certain organic compounds.
- Organic light emitting diodes (OLEDs) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc., for displaying information.
- OLEDs can also be used for general space illumination.
- An OLED display for example, may include layers of organic material situated between two electrodes that are deposited on a substrate in a manner to form a matrix display panel having individually energizable pixels.
- OLED displays or OLED lighting applications include a stack of several organic materials and metal or metal alloys, which are for example evaporated in a vacuum deposition system.
- An OLED display for example, may include layers of organic material situated between two electrodes that are deposited on a substrate.
- One of these electrodes can include a transparent conductive layer such as ITO or other transparent conductive oxide materials (TCO).
- TCO transparent conductive oxide materials
- the second electrode can include a metal or a metal alloy.
- a protective layer or a layer for reducing electron affinity often a very thin layer of lithium fluoride between the cathode and the electron transport layer, cesium fluoride or silver can be deposited.
- an improved metal or metal alloy evaporation device and an improved metal or metal alloy evaporation is beneficial.
- a material deposition assembly for depositing a material on a substrate in a vacuum deposition chamber.
- the material deposition assembly includes at least one material deposition source.
- the deposition source includes a distribution pipe configured for directing evaporated material to the substrate, the distribution pipe having a counterpart flange with a counterpart spheroid surface being rotational symmetric about an axis of circular symmetry, the counterpart spheroid surface having a first height along the axis.
- the deposition source includes a crucible to evaporate the material, the crucible having a flange with a spheroid surface being rotational symmetric about the axis, the spheroid surface having a second height along the axis, wherein the second height is different from the first height, particularly the second height is different by at least 20% relative to the first height.
- a crucible to evaporate a material includes an enclosure to evaporate the material and a flange coupled to the enclosure.
- the flange includes a spheroid surface being rotational symmetric about an axis of circular symmetry, the spheroid surface having a second height along the axis, and an opening for trespassing of evaporated material having an opening size, wherein the second height is 30% or less relative to the opening size.
- a distribution pipe for directing evaporated material in a vacuum processing system includes a distribution housing having one or more openings for directing the evaporated material and a counterpart flange coupled to the distribution housing.
- the counterpart flange includes a counterpart spheroid surface being rotational symmetric about an axis of circular symmetry, the counterpart spheroid surface having a second counterpart height along the axis, and an counterpart opening for trespassing of evaporated material having an counterpart opening size, wherein the second counterpart height is 30% or less than the counterpart opening size.
- a vacuum deposition system includes a vacuum deposition chamber and a material deposition assembly according to any of the embodiments described herein in the vacuum deposition chamber.
- the vacuum deposition system includes a substrate support configured for supporting the substrate during material deposition.
- a method of manufacturing a device having at least one metallic layer with a material deposition assembly having at least one material deposition source with a crucible according to any of the embodiments described herein and a distribution pipe.
- the method includes inserting the crucible into a compartment of the at least one material deposition source, applying a contact force at a connection between the crucible and the distribution pipe, and evaporating a metal to deposit the at least one metallic layer.
- FIG. 1A shows a schematic cross-sectional side view of a lower portion of a material deposition assembly according to embodiments described herein, wherein the crucible holding arrangement is disassembled from the material deposition source;
- FIG. IB shows a schematic cross-sectional side view of a lower portion of a material deposition assembly according to embodiments described herein, wherein the crucible holding arrangement is fixed to the material deposition source;
- FIG. 2A shows a cross-sectional view of a portion of a flange, particularly a flange of a crucible having a sealing surface, according to embodiments described herein;
- FIG. 2B shows a cross-sectional view of a portion of a flange, particularly a flange of a crucible having a sealing surface, according to embodiments described herein;
- FIG. 2C shows a cross-sectional view of a portion of a flange, particularly a flange of a crucible having a sealing surface, according to embodiments described herein;
- FIG. 3 A shows a schematic view of a pressing mechanism for high temperatures according to embodiments described herein;
- FIG. 3B shows a schematic cross-sectional side view of a material deposition assembly according to embodiments described herein;
- FIG. 4 shows a schematic side view of a material deposition assembly according to further embodiments described herein;
- FIG. 5 shows a more detailed schematic cross-sectional top view of a material deposition assembly according to further embodiments described herein as exemplarily shown in FIG. 4;
- FIG. 6 shows a schematic view of a vacuum deposition system according to embodiments described herein with a valve being in an open state
- FIG. 7 shows a flow chart illustrating a method of manufacturing a device according to embodiments described herein.
- a “material deposition assembly” is to be understood as an arrangement configured for material deposition on a substrate as described herein.
- a “material deposition assembly” can be understood as an assembly configured for deposition of materials, e.g. for OLED display manufacturing, on large area substrates.
- a “large area substrate” can have a main surface with an area of 0.5 m 2 or larger, particularly of 1 m 2 or larger.
- a large area substrate can be GEN 4.5, which corresponds to about 0.67 m 2 of substrate (0.73x0.92m), GEN 5, which corresponds to about 1.4 m 2 of substrate (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 of substrate (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m 2 of substrate (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 of substrate (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
- substrate as used herein may particularly embrace substantially inflexible substrates, e.g., a wafer, slices of transparent crystal such as sapphire or the like, or a glass plate.
- substrate may also embrace flexible substrates such as a web or a foil.
- substantially inflexible is understood to distinguish over “flexible”.
- a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.5 mm or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates.
- the substrate may be made of any material suitable for material deposition.
- the substrate may be made of a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.
- a “vacuum deposition chamber” is to be understood as a chamber configured for vacuum deposition.
- the term “vacuum”, as used herein, can be understood in the sense of a technical vacuum having a vacuum pressure of less than, for example, 10 mbar.
- the pressure in a vacuum chamber as described herein may be between 10 5 mbar and about 10 8 mbar, more particularly between 10 5 mbar and 10 7 mbar, and even more particularly between about 10 6 mbar and about 10 7 mbar.
- the pressure in the vacuum chamber may be considered to be either the partial pressure of the evaporated material within the vacuum chamber or the total pressure (which may approximately be the same when only the evaporated material is present as a component to be deposited in the vacuum chamber).
- the total pressure in the vacuum chamber may range from about 1 O 4 mbar to about 1 O 7 mbar, especially in the case that a second component besides the evaporated material is present in the vacuum chamber (such as a gas or the like).
- a “material deposition source” can be understood as a device or assembly configured for providing a source of material to be deposited on a substrate.
- a “material deposition source” may be understood as a device or assembly having a crucible configured to evaporate the material to be deposited and a distribution pipe, such as a distribution assembly configured for providing the evaporated material to the substrate.
- the pipe can have any shape providing an enclosure for the evaporated material having openings directing the evaporated material to a substrate.
- the expression “a distribution pipe configured for providing the evaporated material to the substrate” may be understood in that the distribution assembly is configured for guiding gaseous source material in a deposition direction, exemplarily indicated in FIG. 3B by arrows through the outlets 326.
- the gaseous source material for example a material for depositing a thin film, such as a metal containing thin film, of e.g. an OLED device
- the distribution pipe exits the distribution pipe through one or more outlets 326.
- the one or more outlets of the distribution assembly e.g. a distribution pipe
- the evaporation direction can be essentially horizontal, e.g. the horizontal direction may correspond to the x-direction indicated in FIG. 3B.
- a “crucible” can be understood as a device having a reservoir for the material to be evaporated by heating the crucible.
- a “crucible” can be understood as a source material reservoir which can be heated to vaporize the source material into a gas by at least one of evaporation and sublimation of the source material.
- the crucible includes a heater to vaporize the source material in the crucible into a gaseous source material.
- the reservoir can have an inner volume for receiving the source material to be evaporated, e.g. a metal material.
- the volume of the crucible can be between 100 cm 3 and 4000 cm 3 , particularly between 1000 cm 3 and 3000 cm 3 , more particularly 2800 cm 3 .
- the crucible may include a heating unit configured for heating the source material provided in the inner volume of the crucible up to a temperature at which the source material evaporates.
- the crucible may be a crucible for evaporating metal materials, e.g. metal materials having an evaporation temperature of above 800°C.
- the distribution assembly or the distribution pipe can be a linear distribution showerhead, for example, having a plurality of openings (or an elongated slit) disposed therein.
- a showerhead as understood herein can have an enclosure, hollow space, or pipe, in which the evaporated material can be provided or guided, for example from the evaporation crucible to the substrate.
- the length of the distribution pipe may correspond at least to the height of the substrate to be deposited.
- the length of the distribution pipe may be longer than the height of the substrate to be deposited, at least by 10% or even 20%.
- the length of the distribution pipe can be 1.3 m or above, for example 2.5 m or above. Accordingly, a uniform deposition at the upper end of the substrate and/or the lower end of the substrate can be provided.
- the distribution pipe or a distribution assembly may include one or more point sources which can be arranged along a vertical axis.
- a “distribution pipe” or the “distribution assembly” as described herein may be configured to provide a line source extending essentially vertically.
- the term “essentially vertically” is understood particularly when referring to the substrate orientation, to allow for a deviation from the vertical direction of 10° or below. This deviation can be provided because a substrate support with some deviation from the vertical orientation might result in a more stable substrate position or may result in less particles on the substrate during substrate processing.
- the substrate orientation during deposition of the metal material is considered essentially vertical, which is considered different from the horizontal substrate orientation.
- the surface of the substrates can be coated by a line source extending in one direction corresponding to one substrate dimension and a translational movement along the other direction corresponding to the other substrate dimension.
- Embodiments of the present disclosure relate to an evaporation source including an evaporation tube or an evaporation pipe and including a crucible.
- the sealing concept i.e. a flange of a crucible and/or a corresponding flange of a distribution pipe.
- the sealing concept is particularly useful for high temperatures of 800°C or above, for example, 1000°C to 1500°C or even 1200°C to 1500°C.
- the sealing surface includes a ball cut, i.e. two or more spheroid surfaces. A ball cut sealing for high temperature metal evaporation sources is provided.
- a crucible to evaporate a material includes an enclosure to evaporate the material and a flange coupled to the enclosure for providing a sealing surface of the crucible.
- the sealing surface includes a first spheroid surface having a portion of a first spheroid and a second spheroid surface having a portion of a second spheroid, wherein the second spheroid is different from the first spheroid.
- the sealing surface is self-sealing, i.e. a separate seal can be avoided.
- the at least one material deposition source may include a crucible compartment 115 having a closable opening 116 configured for exchanging the crucible.
- the crucible holding arrangement may include a heating arrangement 160 configured to provide heat to the crucible for evaporating the material.
- the heating arrangement 160 can be configured such that at least a portion of the crucible can be placed inside the heating arrangement.
- the heating arrangement may be configured for holding or supporting the crucible in a lateral direction.
- the heating arrangement can be configured for providing heat to the crucible for evaporating metal materials, e.g. metal materials having an evaporation temperature of about 800°C to about 1600°C, provided inside the crucible.
- the crucible, and optionally components of the crucible compartment can include a refractory metal, for example, Mo, W, Ta and alloys or composites thereof.
- MoLa may be used. Accordingly, high temperatures can be provided during operation of the crucible.
- an actuator 130 can be provided to press the crucible towards the distribution pipe 120.
- the actuator can include at least one element of a spring and a pneumatic actuator.
- connection between the crucible 110 and the distribution pipe may be provided by a counterpart sealing surface 112A of the distribution pipe and a sealing surface 112B of the crucible.
- the counterpart sealing surface 112A can be a concave contact surface and the sealing surface 112B may be a mating convex contact surface.
- the actuator 130 may be connected to the crucible holding arrangement 140.
- the crucible holding arrangement 140 may include a mounting assembly 141 configured for mounting the crucible holding arrangement to the wall of the at least one material deposition source, as exemplarily shown in FIG. IB.
- the mounting assembly 141 can include a mounting plate 142 and one or more fixation elements 143, such as a screw.
- the wall 111 of the material deposition source to which the holding arrangement is mountable can include corresponding receptions for the one or more fixation elements 143.
- FIGS. 2A and 2B show the crucible 110 and the distribution pipe 120.
- the crucible has a flange.
- the distribution pipe has a counterpart flange, particularly a corresponding counterpart flange.
- the flange of the crucible includes a sealing surface 112B.
- the counterpart flange of the distribution pipe includes the counterpart sealing surface 112A.
- the sealing surface is a spheroid surface 212 or can include a spheroid surface 212.
- the counterpart sealing surface is a counterpart spheroid surface or can include counterpart spheroid surface.
- the spheroid surface of the crucible is rotational symmetric about an axis of circular symmetry, for example, a vertical axis in figs. 2A and 2B.
- the height of the spheroid surface is referred to herein as a second height 264.
- the height of the counterpart spheroid surface is referred herein as the first height 262.
- the flange of the crucible includes an opening having an opening size 254.
- the opening is configured for trespassing of material evaporated in the crucible 110 towards the distribution pipe 120.
- the opening size 254 of the flange of the crucible for example, a diameter of the opening is larger than the second height 264.
- flange of the distribution pipe may include an opening having an opening size 252.
- the counterpart spheroid surface of the distribution pipe is rotational symmetric, particularly around the same axis of circular symmetry as the crucible.
- the first height 262 of the counterpart spheroid surface is larger than the second height 264 of the spheroid surface.
- the second height can be different by at least 20% relative to the first height. For example, for a first height of 10 mm, the second height can be 8 mm or below or the second height can be 12 mm or above.
- the flange of the crucible 110 shown in fig. 2B further includes a further spheroid surface 214.
- the spheroid surface 212 is a portion of a first spheroid and the further spheroid surface 214 is a portion of the second spheroid.
- the second spheroid is different from the first spheroid.
- the radius of the first spheroid along a semi axis of the spheroid is different from the radius of the second spheroid along the semi axis, i.e. the same semi axis. Accordingly, a step can be provided as shown in fig. 2B and in more detail fig. 2C.
- a spheroid or a spheroid surface as referred to herein is understood as a quadratic surface obtained by rotating an ellipse.
- the spheroid can be a flattened spheroid or an oblate spheroid.
- the spheroid can be sphere.
- a crucible to evaporate a material includes an enclosure to evaporate the material and a flange coupled to the enclosure.
- the flange includes a spheroid surface being rotational symmetric about an axis of circular symmetry, the spheroid surface having a second height along the axis and an opening for trespassing of evaporated material having an opening size, wherein the second height is 30% or less relative to the opening size.
- the second height can be 30 mm or less.
- the crucible is described with the convex sealing surface and the distribution pipe is described with a concave sealing surface.
- the further roles of the sealing surface and the counterpart sealing surface can be exchanged.
- Features details and implementation described the present disclosure may similarly apply to the exchanged roles and/or the exchanged further roles.
- Embodiments of the present disclosure are particularly configured for high temperature applications, for example, evaporation of metals having an evaporation temperature of 800°C or above. Accordingly, the sealing surface and the counterpart sealing surface experience a large temperature range during heating from room temperature to the evaporation temperature. Accordingly, providing one sealing surface or one spheroid surface having a comparable small height, for example, relative to the height of the opposite sealing surface or the opposite spheroid surface is advantageous during thermal expansion. Particularly, small tilting movements have a reduced or no impact on the sealing characteristics of the flange and the counterpart flange.
- a seal for high temperature applications can be provided. Additionally or alternatively, a comparable small height of the spheroid surface relative to the opening diameter can be provided
- FIG. 2C shows a further flange 200 of a crucible, for example, a crucible as shown in FIGS. 1A and IB.
- FIG. 2C corresponds to crucible shown in fig. 2B, wherein a step is provided.
- FIG. 2C illustrates an optional implementation of a spheroid surface, i.e. a spheroid sealing surface having a comparable small height.
- the flange includes the sealing surface 112B.
- the sealing surface includes a first spheroid surface 212, for example, a first spherical surface, having a portion of a first spheroid, for example, a first sphere.
- a second spheroid surface 214 for example, a second spheroid surface, having a portion of a second spheroid, for example, a second sphere can be provided.
- the second spheroid surface may provide the guiding surface, for example, the surface for improved alignment of the crucible relative to the distribution pipe.
- the second spheroid surface may provide a sealing property, and may, thus, be a portion of the sealing surface.
- the first spheroid and the second spheroid are different.
- the first spheroid can have a radius of a semi axis of the spheroid different from the second spheroid.
- a step can be provided between the first spheroid and the second spheroid by the different radius. The step may extend along a perimeter, i.e. a circle, of the flange.
- Common vacuum sealing concepts like ConFlat (CF) or Klein Flange (KF) are not suitable for high temperatures.
- common sealing materials are not suitable for high temperatures.
- metal surfaces are utilized for sealing.
- At least one of a sealing surface and a counterpart sealing surface has a height that is smaller as the height of the other sealing surface and/or has a height, which is small as compared to the opening size of the opening for evaporated material.
- at least one of the sealing surface and a counterpart sealing surface may have two different spheroid surfaces.
- the sealing concept according to embodiments of the present disclosure can be used for high temperatures of, for example, up to 1500°C.
- the flange is configured for temperatures of 800°C or above.
- the sealing surface includes a refractory metal, particularly, Mo, W, Ta, alloys or composites.
- MoLa may be used.
- FIG. 2C shows a flange of the crucible having a first spheroid surface and a second spheroid surface.
- a similar concept may be applied to a counterpart sealing surface of distribution pipe.
- a distribution pipe for directing evaporated material in a vacuum processing system is provided.
- the distribution pipe includes a distribution housing having one or more openings for directing the evaporated material and a counterpart flange coupled to the distribution housing.
- the counterpart flange includes a counterpart spheroid surface being rotational symmetric about an axis of circular symmetry.
- the counterpart spheroid surface has a second counterpart height along the axis.
- the counterpart flange includes an counterpart opening for trespassing of evaporated material having an counterpart opening size, wherein the second counterpart height is 30% or less than the counterpart opening size.
- the design of the sealing surface as described with respect to FIG. 2C may alternatively be provided for the counterpart sealing surface.
- the first counterpart spheroid or counterpart sphere can have a radius different from the second counterpart spheroid the second counterpart sphere.
- a step can be provided between the first counterpart spheroid and the second counterpart spheroid.
- a material deposition assembly for depositing a material on a substrate in a vacuum deposition chamber is provided.
- the material deposition assembly 300 is exemplarily shown in FIG. 3B.
- At least one material deposition source 305 is provided.
- the material deposition source includes a distribution pipe 120 configured for directing the evaporated material to the substrate, wherein the distribution pipe has a counterpart flange with at least a first counterpart spheroid surface.
- a crucible according to any of the embodiments described herein to evaporate the material is provided.
- FIG. 3A shows actuators 130.
- a material deposition assembly can include at least one actuator to provide a contact force at a connection between the flange, for example, the flange of the crucible and the counterpart flange, for example, the flange at the distribution pipe.
- An actuator can include the spring 330 in a housing 332. The housing can reduce the heat radiation to the spring 330.
- a pneumatic actuator may be used instead of the spring.
- Guiding pins 340 transfer the force of the actuator from a remote location to the crucible.
- guiding pins can be utilized to contact the mounting plate 142 supporting the crucible 110.
- one or more point contacts 342 can be provided. The point contacts reduce heat transfer between the crucible 110 and the mechanism providing a force of the actuator, for example, a spring.
- FIG. 3B shows the crucible 110 being engaged with the distribution pipe 120.
- the actuator is provided to contact force Fc for the connection between the flange and the counterpart flange.
- the spheroid surface can be a convex contact surface and the counterpart spheroid surface can be a concave contact surface.
- the actuator can be coupled to the crucible via pins to provide the actuator outside the crucible housing, for example, the crucible compartment 115 shown in FIG. 1 A.
- the sealing concept having ball cut sealing surfaces is self-centering.
- the sealing is not affected by strain and/or bending during source heat up and is insensitive to small misalignments, particularly in light of the small height of one of the spheroid surfaces engaging with each other.
- the sealing function can be maintained at high temperatures, and particularly in the absence of an extra sealing element, such as the seal that may need to be exchanged during maintenance.
- the sealing surfaces have a high temperature stable metal material, for example including Mo, Ta, W, alloys thereof or combinations or compositions thereof.
- the two mating sealing surfaces have a ball cut shape (male and female) and are pressed together by a pressing mechanism such as the actuator 130.
- a pneumatic pressing mechanism may also enable detaching of the sealing surfaces (e.g. crucible and tube) in a hot state.
- the contact area of two counterparts is reduced to an spherical segment or spherical zone, see for example surface 212 in FIG. 2C to ensure good self-centering and to avoid clamping and/or bonding of the two components of the evaporation source.
- a spheroid segment or spheroid zone may be provided.
- a vacuum evaporator with a sealing concept for high-temperature sealing can be provided.
- the crucible is detachable for refilling of material to be evaporated during maintenance.
- FIG. 3B shows a schematic sectional view of a material deposition assembly 300 according to embodiments described herein.
- the material deposition assembly is configured for depositing a material on a substrate in a vacuum deposition chamber.
- the material deposition assembly includes at least one material deposition source 305 having a crucible 110 configured to evaporate the material.
- the material deposition assembly includes a distribution pipe 120 configured for providing the evaporated material to the substrate.
- the distribution pipe 120 of the at least one deposition source may include a distribution pipe with one or more outlets 326 provided along the length of the distribution pipe.
- An opening 313 may be provided at the bottom of the distribution pipe 120.
- the opening 313 provided at the bottom of the distribution pipe 120 can be arranged and configured to allow fluid communication with the crucible 110, for instance via an opening provided in a top wall of the crucible.
- the material deposition assembly 300 may include an actuator 130 configured for applying a contact force F c at a connection 312 between the crucible 110 and the distribution pipe 120.
- the force applicator or actuator is configured for applying a force F in a direction towards a connection 312 between the crucible 110 and the distribution pipe 120.
- the force F can be a force in a substantially vertical direction, e.g. in a direction opposite to the gravitational force.
- the actuator 130 can be configured to provide a force of 100 N, e.g. a contact force at a connection between the crucible and the distribution pipe.
- the at least one material deposition source may include at least a first deposition source 305 A and a second deposition source 305B. Additionally, a third deposition source 305C may be provided, as exemplarily shown in FIG. 4.
- the first deposition source 305A includes a first crucible 110A configured to evaporate a first material, a first distribution pipe 120 A configured for providing the first evaporated material to the substrate, and a first actuator 130A configured for applying a contact force at a connection between the first crucible 110A and the first distribution pipe 120A.
- the second deposition source 305B includes a second crucible 110B configured to evaporate a second material, a second distribution pipe 120B configured for providing the second evaporated material to the substrate, and a second actuator 130B configured for applying a contact force at a connection between the second crucible 110B and the second distribution pipe 120B.
- the third deposition source 305C includes a third crucible 1 IOC configured to evaporate a third material, a third distribution pipe 120C configured for providing the third evaporated material to the substrate, and a third actuator 130C configured for applying a contact force at a connection between the third crucible 1 IOC and the third distribution pipe 120C.
- FIG. 5 shows a more detailed schematic cross-sectional top view of a material deposition assembly according to further embodiments described herein as exemplarily shown in FIG. 4.
- FIG. 5 shows a cross-sectional top view of a material deposition assembly including a first deposition source 305 A, a second deposition source 305B, and a third deposition source 305C.
- a material deposition assembly may be provided as an evaporation source array, e.g. wherein more than one kind of material can be evaporated at the same time.
- the at least one material deposition source of the material deposition assembly 300 may include three deposition sources, e.g. a first deposition source 305A, a second deposition source 305B, and a third deposition source 305C.
- Each deposition source can include a distribution pipe as described herein and a crucible as described herein, wherein a sealing surface and a counterpart sealing surface is provided. At least one of the sealing surface and the counterpart sealing surface is provided according to embodiments of the present disclosure, i.e. having a height smaller than the engaging sealing surface or a height being 30% or less relative to an opening size or opening diameter of an opening in the flange, wherein the opening is for trespassing of the evaporated material.
- an evaporator control housing 580 may be provided adjacent to the least one material deposition source, e.g. having a first distribution pipe 120A, a second distribution pipe 120B, and a third distribution pipe 120C, as exemplarily shown in FIG. 5.
- the evaporator control housing can be configured to maintain atmospheric pressure therein and is configured to house at least one element selected from the group consisting of: a switch, a valve, a controller, a cooling unit, a cooling control unit, a heating control unit, a power supply, and a measurement device.
- evaporated source material exiting the outlets of the distribution assemblies are indicated by arrows. Due to the essentially triangular shape of the distribution assemblies, the evaporation cones originating from the three distribution assemblies are in close proximity to each other, such that mixing of the source material from the different distribution assemblies can be improved. In particular, the shape of the cross-section of the distribution pipes allows to place the outlets or nozzles of neighboring distribution pipes close to each other.
- a vacuum deposition system 600 is provided, as exemplarily shown in FIG. 6.
- the vacuum deposition system includes a vacuum deposition chamber 610, a material deposition assembly 300 according to any of the embodiments described herein in the vacuum deposition chamber 610, and a substrate support configured for supporting a substrate 601 during material deposition.
- the material deposition assembly 300 can be provided on a track or linear guide 622, as exemplarily shown in FIG. 6.
- the linear guide 622 may be configured for the translational movement of the material deposition assembly 300.
- a drive for providing a translational movement of material deposition assembly 300 can be provided.
- a transportation apparatus for contactless transportation of the material deposition assembly source may be provided in the vacuum deposition chamber.
- the vacuum deposition chamber 610 may have a gate valves 615 via which the vacuum deposition chamber can be connected to an adjacent routing module.
- the routing module can be configured to transport the substrate to a further vacuum deposition system for further processing.
- two substrates e.g. a first substrate 601A and a second substrate 601B
- two substrates can be supported on respective transportation tracks within the vacuum deposition chamber 610.
- two tracks for providing masks 633 thereon can be provided.
- a source support 631 configured for the translational movement of the material deposition assembly 300 along the linear guide 622 may be provided.
- the source support 631 supports a crucible 110 and a distribution pipe 120 provided over the evaporation crucible, as schematically shown in FIG. 6. Accordingly, the vapor generated in the evaporation crucible can move upwardly and out of the one or more outlets of the distribution pipe.
- the distribution pipe is configured for providing evaporated material, particularly a plume of evaporated metal material, from the distribution pipe 120 to the substrate 601.
- a vacuum deposition system includes a vacuum deposition chamber and a material deposition assembly according to any of the embodiments described herein. Particularly, a flange with a sealing surface according to embodiments described herein is provided.
- a substrate support is configured for supporting a substrate during material deposition, particularly in an essentially vertical orientation.
- a method 700 of manufacturing a device having at least one metallic layer with a material deposition assembly includes at least one material deposition source with a crucible according to embodiments described herein and a distribution pipe.
- the method includes, according to operation 710, inserting the crucible into a compartment of the at least one material deposition source.
- a contact force at a connection between the crucible and the distribution pipe is applied.
- a metal to deposit the at least one metallic layer is evaporated.
- an improved material deposition assembly and an improved vacuum deposition system are provided, particularly for high temperature evaporation applications, e.g. during OLED device manufacturing.
- the sealing concept as described herein, which is applicable for high- temperature sealing of an evaporation crucible, may also be utilized in applications of material deposition on flexible substrates, i.e. WEBs, or for material deposition on wafers, e.g. for semiconductor manufacturing.
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Abstract
Description
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Priority Applications (3)
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CN202180092769.9A CN116802337A (en) | 2021-02-16 | 2021-02-16 | Crucible, distribution pipe, material deposition assembly, vacuum deposition system and method for manufacturing device |
PCT/IB2021/051284 WO2022175703A1 (en) | 2021-02-16 | 2021-02-16 | Crucible, distribution pipe, material deposition assembly, vacuum deposition system and method of manufacturing a device |
KR1020237028634A KR20230132853A (en) | 2021-02-16 | 2021-02-16 | Methods for manufacturing crucibles, distribution pipes, material deposition assemblies, vacuum deposition systems and devices |
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PCT/IB2021/051284 WO2022175703A1 (en) | 2021-02-16 | 2021-02-16 | Crucible, distribution pipe, material deposition assembly, vacuum deposition system and method of manufacturing a device |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005179764A (en) * | 2003-12-24 | 2005-07-07 | Hitachi Zosen Corp | Vapor deposition apparatus |
CN101359583A (en) * | 2007-07-31 | 2009-02-04 | 东京毅力科创株式会社 | Plasma processing apparatus of batch type |
US20170067146A1 (en) * | 2015-09-08 | 2017-03-09 | Boe Technology Group Co., Ltd. | Evaporation crucible and evaporation device |
WO2019239192A1 (en) * | 2018-06-15 | 2019-12-19 | Arcelormittal | Vacuum deposition facility and method for coating a substrate |
US20190390322A1 (en) * | 2017-03-17 | 2019-12-26 | Applied Materials, Inc. | Material deposition arrangement, vacuum deposition system and methods therefor |
-
2021
- 2021-02-16 WO PCT/IB2021/051284 patent/WO2022175703A1/en active Application Filing
- 2021-02-16 KR KR1020237028634A patent/KR20230132853A/en active Search and Examination
- 2021-02-16 CN CN202180092769.9A patent/CN116802337A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005179764A (en) * | 2003-12-24 | 2005-07-07 | Hitachi Zosen Corp | Vapor deposition apparatus |
CN101359583A (en) * | 2007-07-31 | 2009-02-04 | 东京毅力科创株式会社 | Plasma processing apparatus of batch type |
US20170067146A1 (en) * | 2015-09-08 | 2017-03-09 | Boe Technology Group Co., Ltd. | Evaporation crucible and evaporation device |
US20190390322A1 (en) * | 2017-03-17 | 2019-12-26 | Applied Materials, Inc. | Material deposition arrangement, vacuum deposition system and methods therefor |
WO2019239192A1 (en) * | 2018-06-15 | 2019-12-19 | Arcelormittal | Vacuum deposition facility and method for coating a substrate |
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CN116802337A (en) | 2023-09-22 |
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