WO2017075867A1 - 阵列基板及其制造方法、液晶显示面板 - Google Patents

阵列基板及其制造方法、液晶显示面板 Download PDF

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Publication number
WO2017075867A1
WO2017075867A1 PCT/CN2015/097991 CN2015097991W WO2017075867A1 WO 2017075867 A1 WO2017075867 A1 WO 2017075867A1 CN 2015097991 W CN2015097991 W CN 2015097991W WO 2017075867 A1 WO2017075867 A1 WO 2017075867A1
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Prior art keywords
liquid crystal
material layer
conductive layer
display panel
crystal display
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PCT/CN2015/097991
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English (en)
French (fr)
Inventor
唐岳军
李亚锋
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Wuhan China Star Optoelectronics Technology Co Ltd
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US14/907,911 priority Critical patent/US20190196277A1/en
Publication of WO2017075867A1 publication Critical patent/WO2017075867A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133371—Cells with varying thickness of the liquid crystal layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making

Definitions

  • the present invention relates to the field of liquid crystal imaging technology, and in particular to an array substrate, a method of manufacturing the same, and a liquid crystal display panel.
  • Liquid crystal displays have the advantages of low radiation, small size, and low power consumption. They have gradually replaced traditional cathode ray tube displays and are widely used in flat panel TVs, personal computers, and mobile display panels.
  • increasing the transmittance of the liquid crystal display panel can greatly improve the utilization of the backlight. Since the power consumption of the entire liquid crystal display is mostly backlight energy consumption, increasing the backlight utilization helps to reduce the backlight power consumption, thereby reducing the power consumption of the entire liquid crystal display.
  • Fig. 1 is a graph showing the relationship between the transmittance Tr of a liquid crystal display panel and the cell thickness (Cell Gap). As can be seen from Fig. 1, the increase in the thickness of the liquid crystal cell contributes to an increase in the transmittance Tr.
  • Fig. 2 is a graph showing the relationship between the response time RT of the liquid crystal display panel and the cell thickness (Cell Gap).
  • the response time RT of the liquid crystal display panel increases. This is because as the thickness of the liquid crystal cell increases, the electric field away from the electrode becomes weak, which causes a corresponding increase in the time required for the deflection angle of the liquid crystal generated away from the electric field, and at the same time, the liquid crystal recovery away from the electric field. The time has also increased accordingly.
  • the conventional liquid crystal display panel increases the transmittance TR by increasing the thickness of the liquid crystal cell.
  • the increase in the thickness of the liquid crystal cell causes an increase in the response time RT of the liquid crystal display panel, thereby affecting the imaging quality of the panel.
  • the present invention first provides a new array substrate in an embodiment, the array substrate comprising: a first material layer and a first conductive layer formed on the first material layer, wherein the first material The regions of the layer that are not blocked by the first conductive layer are etched away in whole or in part in the thickness direction.
  • the array substrate further includes a second conductive layer, the first material layer being formed on the second conductive layer.
  • the first material layer comprises a plurality of sub-material layers.
  • the first material layer is obtained by etching a photomask matching the first conductive layer;
  • the first material layer is obtained by etching the first conductive layer as a mask.
  • the present invention also provides a liquid crystal display panel comprising the array substrate according to any of the above.
  • the invention also provides a method of manufacturing an array substrate, the method comprising:
  • the first material layer is etched to etch away all or part of the first material layer that is not blocked by the first conductive layer in the thickness direction.
  • the method further forms a second conductive layer, which is formed directly or indirectly on the second conductive layer, before forming the first material layer.
  • the first material is etched by using the first conductive layer as a reticle.
  • the invention also provides a method of manufacturing an array substrate, the method comprising:
  • the method further forms a second conductive layer, which is formed directly or indirectly on the second conductive layer, before forming the first material layer.
  • the array substrate provided by the present invention can increase the effective thickness of the liquid crystal cell, thereby increasing the transmittance Tr of the panel.
  • a region where the effective thickness of the liquid crystal cell is increased is located at a position below the side of the pixel electrode and near the pixel electrode. Since the pixel electrode has a strong electric field under and laterally, the liquid crystal molecules at the region can be deflected quickly by the electric field, which makes the response time RT of the liquid crystal display panel not increase.
  • the distance between the array substrate and the CF substrate can be appropriately reduced while ensuring the transmittance. It helps to reduce the thickness of the liquid crystal cell, and thus the response time RT of the liquid crystal display panel is also reduced. At the same time, reducing the thickness of the liquid crystal cell can also reduce the oblique light leakage of adjacent sub-pixels when viewed from a large viewing angle, thereby improving the problem of large-view character bias of the liquid crystal display panel.
  • 1 is a graph showing a relationship between a transmittance of a liquid crystal display panel and a thickness of a liquid crystal cell
  • FIG. 2 is a graph showing a relationship between a response time of a liquid crystal display panel and a thickness of a liquid crystal cell
  • FIG. 3 is a schematic structural view of a conventional FFS type liquid crystal display panel
  • FIG. 4 is a schematic diagram of color mixing of oblique incident light at a boundary point of adjacent sub-pixels in a conventional FFS liquid crystal display panel
  • FIG. 5 is a schematic structural diagram of an FFS type liquid crystal display panel according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural view of an FFS type liquid crystal display panel according to another embodiment of the present invention.
  • FIG. 7 is a schematic structural view of a conventional IPS type liquid crystal display panel
  • FIG. 8 is a schematic structural diagram of an IPS type liquid crystal display panel according to an embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of an IPS type liquid crystal display panel according to another embodiment of the present invention.
  • FIG. 10 is a schematic structural view of an adjacent sub-pixel boundary position of an FFS type liquid crystal display panel according to an embodiment of the present invention.
  • FIG. 11 is a schematic structural view of an adjacent sub-pixel boundary position of an FFS type liquid crystal display panel according to another embodiment of the present invention.
  • the conventional liquid crystal display panel increases the transmittance Tr of the panel by increasing the thickness of the liquid crystal cell.
  • an increase in the thickness of the liquid crystal cell causes an increase in the response time RT of the liquid crystal display panel.
  • the present invention provides a new array substrate and a liquid crystal display panel including the array substrate.
  • a first conductive layer as a pixel electrode is formed on the first material layer. Wherein the region of the first material layer that is not blocked by the first conductive layer is completely or partially etched away in the thickness direction.
  • Such a structure of the array substrate can increase the effective thickness of the liquid crystal cell, thereby effectively increasing the transmittance Tr of the liquid crystal display panel without increasing the response time RT of the liquid crystal display panel.
  • the array substrate provided by the present invention can be applied to different types of liquid crystal display panels such as FFS type and IPS type.
  • FFS type and IPS type liquid crystal display panels
  • the purpose, principles, and advantages of the present invention will be further described below by taking an FFS type liquid crystal display panel and an IPS type liquid crystal display panel as examples, respectively.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • FIG. 3 is a schematic view showing the structure of a conventional FFS type liquid crystal display panel.
  • the conventional liquid crystal display panel includes an array substrate, a liquid crystal cell 306, and a CF substrate.
  • the array substrate includes a lower substrate 301, a first insulating layer 302, a common electrode 303, a second insulating layer 304, and a pixel electrode 305.
  • the CF substrate includes a color filter 307 and a glass substrate 308.
  • the pixel electrode 305 is formed on the second insulating layer 304.
  • the thickness is the distance d between the color filter 307 and the second insulating layer 304.
  • the thickness d of the liquid crystal cell is also its effective thickness.
  • the lower substrate 301 includes a light-transmitting lining, an insulating spacer, and scan lines and/or data lines of a non-opening region, wherein the light-transmitting lining may be made of a material such as glass or resin.
  • FIG. 4 is a schematic view showing the color mixture of oblique incident rays at the boundary point of adjacent sub-pixels in the FFS type liquid crystal display panel shown in FIG. 3, and FIG. 4 also schematically shows the boundary of sub-pixels. Zone/edge zone.
  • the color filter 307 includes a flat layer 307a, a color resist layer 307b, and a black matrix 307c.
  • the voltage of the turned-on sub-pixel affects the rotation of the liquid crystal between the two adjacent sub-pixels to some extent.
  • the critical angle ⁇ of the mixed incident ray of the intersection of two adjacent sub-pixels may be approximated according to the following expression Calculated:
  • L BM represents a wide width of the black matrix
  • T PR represents the thickness of the color resist layer
  • T OC represents the thickness of the flat layer
  • d represents the thickness of the liquid crystal cell.
  • the conventional liquid crystal display panel increases the transmittance Tr of the panel by increasing the thickness of the liquid crystal cell 306.
  • the increase in the thickness of the liquid crystal cell also increases the response time RT of the liquid crystal display panel.
  • FIG. 5 shows a schematic structural view of the liquid crystal display panel.
  • FIG. 5 also schematically shows a pixel transmission area/pixel. central area.
  • the liquid crystal display panel provided in this embodiment includes an array substrate, a liquid crystal cell 506, and a CF substrate.
  • the array substrate includes a lower substrate 501, a second material layer 502, a second conductive layer 503, a first material layer 504, and a first conductive layer 505.
  • the first material layer 504 is formed between the first conductive layer 505 and the second conductive layer 503, which enables insulation isolation between the first conductive layer 505 and the second conductive layer 503.
  • the first conductive layer 505 forms a pixel electrode
  • the second conductive layer 503 forms a common electrode
  • the two conductive layers are all realized by an ITO film.
  • the first conductive layer and/or the second conductive layer may also be implemented by other reasonable materials, and the present invention is not limited thereto.
  • the region of the first material layer 504 that is not blocked by the first conductive layer 505 is completely engraved in the thickness direction. Etched.
  • the effective thickness d' of the liquid crystal cell can be calculated according to the following expression:
  • T 1 represents the thickness of the first material layer 504.
  • the first material layer 504 is a SiN x layer.
  • the first material layer 504 may also be implemented by other reasonable materials, and the present invention is not limited thereto.
  • the first material layer 504 and/or the second material layer 502 may be a single layer structure or a multilayer structure composed of the same material or different materials (ie, the first material).
  • the layer and/or the second material layer comprise a plurality of sub-material layers), the invention is likewise not limited thereto.
  • This embodiment also provides a method of manufacturing the above array substrate.
  • the first material layer 504 is formed on the second conductive layer 503.
  • Etching is performed such that the first material layer 504 forms a predetermined pattern.
  • the predetermined pattern is a pattern that matches (eg, is the same) as the first conductive layer 505 (ie, the pixel electrode).
  • a first conductive layer is formed on the obtained predetermined pattern, thereby obtaining a desired array substrate.
  • the first material layer 504 is preferably etched by photolithography. When the first material layer 504 is etched, etching is performed using a photomask having a predetermined pattern. Of course, in other embodiments of the present invention, the first material layer 504 may be etched by other reasonable means (such as wet etching, etc.), and the present invention is not limited thereto.
  • the first conductive layer 506 may be formed on the first material layer 504 after the first material layer 504 is formed. Then, the first material layer 504 is etched by using a photomask having a predetermined pattern, so that the region of the first material layer 504 that is not blocked by the first conductive layer 506 is completely etched away in the thickness direction, thereby obtaining a The required array substrate.
  • the first material layer may be etched by using the structure of the first material layer 504 itself as a photomask, and the present invention is not limited thereto. Meanwhile, as shown in FIG. 6, in other embodiments of the present invention, only a portion of the first material layer 504 that is not blocked by the first conductive layer 506 may be etched away in the thickness direction, which also increases the liquid crystal cell. Effective thickness.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • FIG. 7 is a schematic view showing the structure of a conventional IPS type liquid crystal display panel.
  • the conventional liquid crystal display panel includes an array substrate, a liquid crystal cell 704, and a CF substrate.
  • the array substrate includes a lower substrate 701, an insulating layer 702, and an electrode layer 703.
  • the CF substrate includes a color filter 705 and a glass substrate 706.
  • the electrode layer 703 (including the pixel electrode and the common electrode) is formed on the insulating layer 702.
  • the thickness is the distance d between the color filter 705 and the insulating layer 702.
  • the thickness d of the liquid crystal cell is also its effective thickness.
  • the conventional liquid crystal display panel increases the transmittance Tr of the panel by increasing the thickness of the liquid crystal cell 704.
  • the increase in the thickness of the liquid crystal cell also increases the response time RT of the liquid crystal display panel.
  • increasing the thickness of the liquid crystal cell causes the color mixture critical angle ⁇ to decrease.
  • the decrease of the color mixture critical angle ⁇ will intensify the problem of squinting light leakage of the liquid crystal display panel.
  • FIG. 8 shows a schematic structural view of the liquid crystal display panel.
  • the liquid crystal display panel provided in this embodiment includes: an array substrate, a liquid crystal cell 804, and a CF. Substrate.
  • the array substrate includes a lower substrate 801, a first material layer 802, and a first conductive layer 803.
  • the first material layer 802 is formed between the first conductive layer 803 and the lower substrate 801.
  • the first conductive layer 803 constitutes a pixel electrode layer and a common electrode, which is implemented by using an ITO film. It should be noted that, in other embodiments of the present invention, the first conductive layer may also be implemented by other reasonable materials, and the present invention is not limited thereto.
  • the region of the first material layer 802 that is not blocked by the first conductive layer 803 is completely along the thickness direction thereof. Etched off.
  • the effective thickness d' of the liquid crystal cell also becomes d + T 1 .
  • T 1 represents the thickness of the first material layer 802.
  • the first material layer 802 is a SiN x layer.
  • the first material layer 802 may also be implemented by other reasonable materials, and the present invention is not limited thereto.
  • the first material layer 802 may be a single layer structure or a multilayer structure composed of the same material or different materials (ie, the first material layer includes a plurality of sub-material layers). The invention is also not limited thereto.
  • the first etched may also comprise a partially planar layer, and the invention is likewise not limited thereto.
  • This embodiment also provides a method of manufacturing the above array substrate.
  • the first material layer 802 is etched such that the first material layer 802 forms a predetermined pattern.
  • the predetermined pattern is preferably the same pattern as the first conductive layer 803.
  • the first conductive layer 803 is formed on the obtained predetermined pattern, thereby obtaining a desired array substrate.
  • the first material layer 802 is preferably etched by photolithography. When the first material layer 802 is etched, etching is performed using a photomask having a predetermined pattern. Of course, in other embodiments of the present invention, the first material layer 802 may also be etched by other reasonable means (such as wet etching, etc.), and the present invention is not limited thereto.
  • the first conductive layer 803 may be formed on the first material layer 802 after the first material layer 802 is formed. Subsequently, the first material layer 802 is etched by using a photomask having a predetermined pattern, so that the region of the first material layer 802 that is not blocked by the first conductive layer 803 is completely etched away in the thickness direction, thereby obtaining a The required array substrate.
  • the first material layer 802 may also be etched by using the structure of the first conductive layer 803 itself as a photomask, and the present invention is not limited thereto. Meanwhile, as shown in FIG. 9, in other embodiments of the present invention, only a portion of the first material layer not covered by the first conductive layer 803 may be etched away in the thickness direction. 802, this also increases the effective thickness of the liquid crystal cell.
  • the array substrate provided by the present invention can increase the effective thickness of the liquid crystal cell, thereby increasing the transmittance Tr of the panel. Meanwhile, since the region where the effective thickness of the liquid crystal cell is increased is located at a position below the side of the pixel electrode and close to the pixel electrode, and the pixel electrode has a strong electric field below and laterally, the liquid crystal molecules at the region can be in the electric field. The deflection occurs very quickly, which causes the response time RT of the liquid crystal display panel to not increase.
  • the transmittance between the array substrate and the CF substrate can be appropriately reduced while ensuring the transmittance Tr.
  • the distance which helps to reduce the thickness of the liquid crystal cell, further reduces the response time RT of the liquid crystal display panel.
  • reducing the thickness of the liquid crystal cell can also increase the color mixture critical angle ⁇ of adjacent sub-pixels, thereby reducing the oblique light leakage of adjacent sub-pixels, thereby improving the large liquid crystal display panel.
  • the role of the problem is reducing the thickness of the liquid crystal cell can also increase the color mixture critical angle ⁇ of adjacent sub-pixels, thereby reducing the oblique light leakage of adjacent sub-pixels, thereby improving the large liquid crystal display panel.
  • the first material layer 504 at the position corresponding to the black matrix of the array substrate provided by the present invention is not etched.
  • the effective thickness of the liquid crystal cell is still the distance d from the color filter 507 to the first material layer 504.
  • the effective thickness of the liquid crystal cell (ie, the distance from the color filter 507 to the second conductive layer 503) d' at each pixel opening area of the array substrate provided by the present invention is greater than the effective thickness of the liquid crystal cell at the corresponding position of the black matrix 509.
  • the transmittance Tr of the entire panel is improved, and the response time RT is lowered.
  • the effective thickness of the liquid crystal cell is increased in the pixel opening area, the color mixing can be increased by appropriately reducing the effective thickness d of the liquid crystal cell at the position of the black matrix 509, in the case where the design requirements of the transmittance Tr and the response time RT are satisfied.
  • the critical angle ⁇ which also improves the light leakage problem between adjacent sub-pixels and the large-view character bias problem of the liquid crystal display panel.
  • the first material layer 504 at a position corresponding to the black matrix 509 between adjacent sub-pixels may also be partially etched, and thus there will be It is helpful to increase the electric field distribution at the boundary position of adjacent sub-pixels, and the present invention is not limited thereto.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Optics & Photonics (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract

阵列基板及其制造方法、液晶显示面板，其中，该阵列基板包括：第一材料层和形成在第一材料层上的第一导电层，其中，第一材料层中未被第一导电层遮挡的区域沿厚度方向被全部或部分刻蚀掉。该阵列基板能够使得液晶盒的有效厚度得以增大，从而提高面板的透过率，同时还能够保证包含该阵列基板的液晶显示面板的响应时间不会增大。

Description

阵列基板及其制造方法、液晶显示面板
相关技术的交叉引用
本申请要求享有2015年11月05日提交的名称为：“阵列基板及其制造方法、液晶显示面板”的中国专利申请CN201510745175.X的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及液晶成像技术领域，具体地说，涉及阵列基板及其制造方法、液晶显示面板。
背景技术
液晶显示器具有辐射低、体积小以及能耗低等优点，其已经逐渐取代传统的阴极射线管显示器而被广泛地应用在平板电视、个人电脑以及移动显示面板等产品上。
对于液晶显示面板来说，提高液晶显示面板的透过率可以很大程度上提高背光的利用率。由于整个液晶显示器的功耗绝大部分是背光能耗，因此提高背光利用率有助于降低背光能耗，进而降低整个液晶显示器的功耗。
除各层材料的透过率以及像素的开口率等因素外，液晶盒厚度也同样能够影响液晶显示面板的透过率。图1示出了液晶显示面板的透过率Tr与液晶盒厚度(Cell Gap)的关系曲线图。从图1中可以看出，液晶盒厚度的增加有助于提高透过率Tr。
图2示出了液晶显示面板的响应时间RT与液晶盒厚度(Cell Gap)的关系曲线图。从图2中可以看出，随着液晶盒厚度的增大，液晶显示面板的响应时间RT随之增大。这是因为随着液晶盒厚度的增大，远离电极处的电场变弱，这也就导致该远离电场处的液晶产生所需要的偏转角的时间相应增加，同时，该远离电场处的液晶恢复的时间也相应增加。
发明内容
现有的液晶显示面板通过增大液晶盒的厚度来提高透过率TR，然而液晶盒厚度的增大会导致液晶显示面板响应时间RT的增大，从而影响面板的成像品质。为解决上述问题， 本发明在一个实施例中首先提供了一种新的阵列基板，所述阵列基板包括：第一材料层和形成在所述第一材料层上的第一导电层，其中，所述第一材料层中未被所述第一导电层遮挡的区域沿厚度方向被全部或部分刻蚀掉。
根据本发明的一个实施例，所述阵列基板还包括第二导电层，所述第一材料层形成在所述第二导电层上。
根据本发明的一个实施例，所述第一材料层包括多个子材料层。
根据本发明的一个实施例，
所述第一材料层是利用与所述第一导电层相匹配的光罩刻蚀得到的；或，
所述第一材料层是利用所述第一导电层作为光罩刻蚀得到的。
本发明还提供了一种液晶显示面板，所述液晶显示面板包括如上任一项所述的阵列基板。
本发明还提供了一种制造阵列基板的方法，所述方法包括：
形成第一材料层，并在所述第一材料层上形成第一导电层；
对所述第一材料层进行刻蚀，以将所述第一材料层中未被所述第一导电层遮挡的区域沿厚度方向全部或部分刻蚀掉。
根据本发明的一个实施例，所述方法在形成第一材料层之前，还形成第二导电层，所述第一材料层直接或间接地形成在所述第二导电层上。
根据本发明的一个实施例，在所述方法中，
利用具有预设图案的光罩对所述第一材料层进行刻蚀；或，
通过将所述第一导电层作为光罩来对所述第一材料进行刻蚀。
本发明还提供了一种制造阵列基板的方法，所述方法包括：
形成第一材料层，并对所述第一材料层进行刻蚀，以使得所述第一材料层形成预设图案；
在所述预设图案上形成第一导电层。
根据本发明的一个实施例，所述方法在形成第一材料层之前，还形成第二导电层，所述第一材料层直接或间接地形成在所述第二导电层上。
本发明所提供的阵列基板能够使得液晶盒的有效厚度得以增大，从而提高面板的透过率Tr。同时，由于使得液晶盒的有效厚度增大的区域位于像素电极的侧下方且靠近像素电极的位置处。由于像素电极的下方和侧向具有强大的电场，因此该区域处的液晶分子能够在电场的作用下很快地发生偏转，这也就使得该液晶显示面板的响应时间RT不会增大。
此外，利用本发明所提供提高液晶显示面板透过率的原理，在生产液晶显示面板时，还可以在保证透过率的情况下，适当地减小阵列基板与CF基板之间的距离，这样有助于减小液晶盒的厚度，进而使得液晶显示面板的响应时间RT也得以减小。同时，减小液晶盒的厚度还能够减小大视角观看时相邻亚像素的斜向漏光，从而改善液晶显示面板的大视角色偏问题。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要的附图做简单的介绍：
图1是液晶显示面板的透过率与液晶盒厚度的关系曲线图；
图2是液晶显示面板的响应时间与液晶盒厚度的关系曲线图；
图3是现有的FFS型液晶显示面板的结构示意图；
图4是现有的FFS型液晶显示面板中相邻亚像素交界点的倾斜入射光线发生混色的示意图；
图5是根据本发明一个实施例的FFS型液晶显示面板的结构示意图；
图6是根据本发明另一个实施例的FFS型液晶显示面板的结构示意图；
图7是现有的IPS型液晶显示面板的结构示意图；
图8是根据本发明一个实施例的IPS型液晶显示面板的结构示意图；
图9是根据本发明另一个实施例的IPS型液晶显示面板的结构示意图；
图10是根据本发明一个实施例的FFS型液晶显示面板相邻亚像素交界位置处的结构示意图；
图11是根据本发明另一个实施例的FFS型液晶显示面板相邻亚像素交界位置处的结构示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明 的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
同时，在以下说明中，出于解释的目的而阐述了许多具体细节，以提供对本发明实施例的彻底理解。然而，对本领域的技术人员来说显而易见的是，本发明可以不用这里的具体细节或者所描述的特定方式来实施。
现有的液晶显示面板通过提高液晶盒的厚度来增大面板的透过率Tr，然而，液晶盒厚度的增大将使得液晶显示面板的响应时间RT增大。
为了解决上述问题，本发明提供了一种新的阵列基板以及包含该阵列基板的液晶显示面板。在本发明所提供的阵列基板中，作为像素电极的第一导电层形成在第一材料层上。其中，第一材料层中未被第一导电层遮挡的区域沿厚度方向被全部或部分刻蚀掉。阵列基板的这种结构能够增大液晶盒的有效厚度，从而在不增大液晶显示面板响应时间RT的情况下有效提高液晶显示面板的透过率Tr。
本发明所提供的阵列基板可以应用在诸如FFS型以及IPS型等不同类型的液晶显示面板中。以下分别以FFS型液晶显示面板和IPS型液晶显示面板为例，来对本发明的目的、原理以及优点作进一步地阐述。
实施例一：
图3示出了现有的FFS型液晶显示面板的结构示意图。
如图3所示，现有的液晶显示面板包括：阵列基板、液晶盒306和CF基板。其中，阵列基板包括：下基板301、第一绝缘层302、公共电极303、第二绝缘层304和像素电极305。CF基板包括彩色滤光片307和玻璃基板308。其中，像素电极305形成在第二绝缘层304上。对于液晶盒306来说，其厚度为彩色滤光片307与第二绝缘层304之间的距离d。对于现有的FFS型液晶显示面板来说，液晶盒的厚度d也就是其有效厚度。下基板301中包含有透光衬板、绝缘隔离层以及非开口区的扫描线和/或数据线等结构，其中，透光衬板可以由玻璃或树脂等材料构成。
图4示意性地示出了图3所示的FFS型液晶显示面板中相邻亚像素的交界点处倾斜入射光线发生混色的示意图，同时，图4还示意性地示出了亚像素的交界区/边缘区。
如图4所示，彩色滤光片307包括：平坦层307a、色阻层307b和黑矩阵307c。当一个亚像素开启而其相邻的亚像素关闭时，开启的亚像素的电压会在一定程度上影响这两个相邻的亚像素之间液晶的转动。为了简化模型，在不考虑相邻亚像素之间数据线对光线的部分阻挡作用的情况下，两个相邻亚像素的交界点的倾斜入射光线发生混色的临界角θ近似可以根据如下表达式计算得到：
Figure PCTCN2015097991-appb-000001
其中，LBM表示黑矩阵的宽幅，TPR表示色阻层的厚度，TOC表示平坦层的厚度，d表示液晶盒的厚度。
现有的液晶显示面板通过提高液晶盒306的厚度来增大面板的透过率Tr，然而，液晶盒厚度的增大也同样会使得液晶显示面板的响应时间RT增大。同时，结合表达式(1)可以看出，在不改变液晶显示面板的其他结构的情况下，增大液晶盒厚度还会使得混色临界角θ减小。而混色临界角θ的减小将使得液晶显示面板的斜视漏光问题加剧。
为了解决上述问题，本实施例提供了一种新的FFS型液晶显示面板，图5示出了该液晶显示面板的结构示意图，其中，图5还示意性地示出了像素透过区/像素中心区。
如图5所示，与图3所示的液晶显示面板类似，本实施例所提供的液晶显示面板包括：阵列基板、液晶盒506和CF基板。其中，阵列基板包括：下基板501、第二材料层502、第二导电层503、第一材料层504和第一导电层505。其中，第一材料层504形成在第一导电层505与第二导电层503之间，其使得第一导电层505与第二导电层503之间能够保持绝缘隔离。
在本实施例所提供的FFS型液晶显示面板中，第一导电层505形成像素电极，第二导电层503形成公共电极，这两个导电层均采用ITO薄膜实现。需要说明的是，在本发明的其他实施例中，第一导电层和/或第二导电层还可以采用其他合理的材料来实现，本发明不限于此。
为了提高液晶显示面板的透过率，如图5所示，在本实施例所提供的液晶显示面板中，第一材料层504中未被第一导电层505遮挡的区域沿厚度方向被全部刻蚀掉。这样，液晶盒的有效厚度d′可以根据以下表达式计算得到：
d′＝d+T1  (2)
其中，T1表示第一材料层504的厚度。
本实施例中，第一材料层504为SiNx层。当然，在本发明的其他实施例中，第一材料层504还可以由其他合理材料来实现，本发明不限于此。同时，在本发明的不同实施例中，第一材料层504和/或第二材料层502既可以为单层结构，也可以为由相同材料或不同材料构成的多层结构(即第一材料层和/或第二材料层包括多个子材料层)，本发明同样不限于此。
本实施例还提供了一种制造上述阵列基板的方法。
在本实施例所提供的阵列基板制造方法中，在第二材料层502上形成第二导电层503(即公共电极)后，再在第二导电层503上形成第一材料层504。随后对第一材料层504 进行刻蚀，以使得第一材料层504形成预设图案。该预设图案为与第一导电层505(即像素电极)相匹配(例如相同)的图案。在对第一材料层504刻蚀完成后，在得到的预设图案上形成第一导电层，从而得到所需要的阵列基板。
本实施例中，优选地采用光刻的方式来对第一材料层504进行刻蚀。在对第一材料层504进行刻蚀时，采用具有预设图案的光罩来进行刻蚀。当然，在本发明的其他实施例中，还可以采用其他合理方式(例如湿刻等)来对第一材料层504进行刻蚀，本发明不限于此。
此外，在本发明的其他实施例中，在制造上述阵列基板时，还可以在形成第一材料层504后，再在第一材料层504上形成第一导电层506。随后利用具有预设图案的光罩来对第一材料层504进行刻蚀，从而将第一材料层504中未被第一导电层506遮挡的区域沿厚度方向全部刻蚀掉，由此得到所需要的阵列基板。
需要说明的是，在本发明的其他实施例中，还可以利用第一材料层504本身的结构充当光罩来对第一材料层进行刻蚀，本发明不限于此。同时，如图6所示，在本发明的其他实施例中，还可以沿厚度方向仅刻蚀掉部分未被第一导电层506遮挡的第一材料层504，这同样能够增大液晶盒的有效厚度。
实施例二：
图7示出了现有的IPS型液晶显示面板的结构示意图。
如图7所示，现有的液晶显示面板包括：阵列基板、液晶盒704和CF基板。其中，阵列基板包括：下基板701、绝缘层702和电极层703。CF基板包括彩色滤光片705和玻璃基板706。其中，电极层703(包括像素电极和公共电极)形成在绝缘层702上。对于液晶盒704来说，其厚度为彩色滤光片705与绝缘层702之间的距离d。对于现有的IPS型液晶显示面板，液晶盒的厚度d也就是其有效厚度。
现有的液晶显示面板通过提高液晶盒704的厚度来增大面板的透过率Tr，然而，液晶盒厚度的增大也同样使得液晶显示面板的响应时间RT增大。同时，结合实施例一中的表达式(1)可以看出，在不改变液晶显示面板的其他结构的情况下，增大液晶盒厚度还会使得混色临界角θ减小。而混色临界角θ的减小将使得液晶显示面板的斜视漏光问题加剧。
为了解决上述问题，本实施例提供了一种新的IPS型液晶显示面板，图8示出了该液晶显示面板的结构示意图。
如图8所示，本实施例所提供的液晶显示面板包括：阵列基板、液晶盒804和CF 基板。其中，阵列基板包括：下基板801、第一材料层802和第一导电层803。其中，第一材料层802形成在第一导电层803与下基板801之间。
在本实施例所提供的IPS型液晶显示面板中，第一导电层803构成像素电极层以及公共电极，其采用ITO薄膜实现。需要说明的是，在本发明的其他实施例中，第一导电层还可以采用其他合理的材料来实现，本发明不限于此。
为了提高液晶显示面板的透过率，如图8所示，在本实施例所提供的液晶显示面板中，第一材料层802中未被第一导电层803遮挡的区域沿其厚度方向被全部刻蚀掉。这样，液晶盒的有效厚度d′也就变为d+T1。其中，T1表示第一材料层802的厚度。
本实施例中，第一材料层802为SiNx层。当然，在本发明的其他实施例中，第一材料层802还可以由其他合理材料来实现，本发明不限于此。同时，在本发明的不同实施例中，第一材料层802既可以为单层结构，也可以为由相同材料或不同材料构成的多层结构(即第一材料层包括多个子材料层)，本发明同样不限于此。
此外，需要指出的是，在本发明的其他实施例中，为了进一步增大液晶盒804的有效厚度，当IPS液晶显示面板的像素电极或公共电极下存在平坦层时，所刻蚀的第一材料层还可以包含部分平坦层，本发明同样不限于此。
本实施例还提供了一种制造上述阵列基板的方法。
在本实施例所提供的阵列基板制造方法中，在下基板801上形成第一材料层802后，对第一材料层802进行刻蚀，以使得第一材料层802形成预设图案。该预设图案优选地为与第一导电层803相同的图案。在对第一材料层802刻蚀完成后，在得到的预设图案上形成第一导电层803，从而得到所需要的阵列基板。
本实施例中，优选地采用光刻的方式来对第一材料层802进行刻蚀。在对第一材料层802进行刻蚀时，采用具有预设图案的光罩来进行刻蚀。当然，在本发明的其他实施例中，还可以采用其他合理方式(例如湿刻等)来对第一材料层802进行刻蚀，本发明不限于此。
当然，在本发明的其他实施例中，在制造上述阵列基板时，还可以在形成第一材料层802后，再在第一材料层802上形成第一导电层803。随后利用具有预设图案的光罩来对第一材料层802进行刻蚀，从而将第一材料层802中未被第一导电层803遮挡的区域沿厚度方向全部刻蚀掉，由此得到所需要的阵列基板。
需要说明的是，在本发明的其他实施例中，还可以利用第一导电层803本身的结构充当光罩来对第一材料层802进行刻蚀，本发明不限于此。同时，如图9所示，在本发明的其他实施例中，还可以沿厚度方向仅刻蚀掉部分未被第一导电层803覆盖的第一材料层 802，这同样能够增大液晶盒的有效厚度。
从上述描述中可以看出，本发明所提供的阵列基板能够使得液晶盒的有效厚度得以增大，从而提高面板的透过率Tr。同时，由于使得液晶盒的有效厚度增大的区域位于像素电极的侧下方且靠近像素电极的位置处，而像素电极的下方和侧向具有强大的电场，因此该区域处的液晶分子能够在电场的作用下很快地发生偏转，这也就使得该液晶显示面板的响应时间RT不会增大。
此外，利用本发明所提供的提高液晶显示面板透过率Tr的原理，在生产液晶显示面板时，还可以在保证透过率Tr的情况下，适当地减小阵列基板与CF基板之间的距离，这样有助于减小液晶盒的厚度，进而使得液晶显示面板的响应时间RT也得以减小。同时，结合表达式(1)可以知道，减小液晶盒的厚度还能够增大相邻亚像素的混色临界角θ，从而减小相邻亚像素的斜向漏光，进而改善液晶显示面板的大视角色偏问题。
具体地，根据图10所示出阵列基板中相邻亚像素交界位置处的结构示意图可知，本发明所提供的阵列基板黑矩阵所对应位置处的第一材料层504未被刻蚀，此处液晶盒的有效厚度仍然为彩色滤光片507到第一材料层504的距离d。由于本发明所提供的阵列基板各个像素开口区处液晶盒的有效厚度(即彩色滤光片507到第二导电层503的距离)d′要大于黑矩阵509所对应位置处液晶盒的有效厚度(即彩色滤光片507到第一材料层504的距离)d，这样整个面板的透过率Tr也就得到提高，响应时间RT得到降低。由于像素开口区出液晶盒的有效厚度增大，因此在满足透过率Tr和响应时间RT设计要求的情况下，可以通过适当减小黑矩阵509位置处液晶盒的有效厚度d来增大混色临界角θ，这样也就改善了相邻亚像素间的漏光问题以及液晶显示面板的大视角色偏问题。
需要指出的是，在本发明的其他实施例中，如图11所示，相邻亚像素之间黑矩阵509所对应位置处的第一材料层504也可以被部分刻蚀，这样也将有助于增大相邻亚像素交界位置处的电场分布，本发明不限于此。
应该理解的是，本发明所公开的实施例不限于这里所公开的特定结构、处理步骤或材料，而应当延伸到相关领域的普通技术人员所理解的这些特征的等同替代。还应当理解的是，在此使用的术语仅用于描述特定实施例的目的，而并不意味着限制。
说明书中提到的“一个实施例”或“实施例”意指结合实施例描述的特定特征、结构或特性包括在本发明的至少一个实施例中。因此，说明书通篇各个地方出现的短语“一个实施例”或“实施例”并不一定均指同一个实施例。
虽然上述示例用于说明本发明在一个或多个应用中的原理，但对于本领域的技术人 员来说，在不背离本发明的原理和思想的情况下，明显可以在形式上、用法及实施的细节上作各种修改而不用付出创造性劳动。因此，本发明由所附的权利要求书来限定。

Claims (14)

  1. 一种阵列基板，其中，所述阵列基板包括：第一材料层和形成在所述第一材料层上的第一导电层，其中，所述第一材料层中未被所述第一导电层遮挡的区域沿厚度方向被全部或部分刻蚀掉。
  2. 如权利要求1所述的阵列基板，其中，所述阵列基板还包括第二导电层，所述第一材料层形成在所述第二导电层上。
  3. 如权利要求1所述的阵列基板，其中，所述第一材料层包括多个子材料层。
  4. 如权利要求2所述的阵列基板，其中，所述第一材料层包括多个子材料层。
  5. 如权利要求1所述的阵列基板，其中，
    所述第一材料层是利用与所述第一导电层相匹配的光罩刻蚀得到的；或，
    所述第一材料层是利用所述第一导电层作为光罩刻蚀得到的。
  6. 一种液晶显示面板，其中，所述液晶显示面板中设置有阵列基板，所述阵列基板包括：
    第一材料层和形成在所述第一材料层上的第一导电层，其中，所述第一材料层中未被所述第一导电层遮挡的区域沿厚度方向被全部或部分刻蚀掉。
  7. 如权利要求6所述的液晶显示面板，其中，所述阵列基板还包括第二导电层，所述第一材料层形成在所述第二导电层上。
  8. 如权利要求6所述的液晶显示面板，其中，所述第一材料层包括多个子材料层。
  9. 如权利要求7所述的液晶显示面板，其中，所述第一材料层包括多个子材料层。
  10. 如权利要求6所述的液晶显示面板，其中，
    所述第一材料层是利用与所述第一导电层相匹配的光罩刻蚀得到的；或，
    所述第一材料层是利用所述第一导电层作为光罩刻蚀得到的。
  11. 一种制造阵列基板的方法，其中，所述方法包括：
    形成第一材料层，并在所述第一材料层上形成第一导电层；
    对所述第一材料层进行刻蚀，以将所述第一材料层中未被所述第一导电层遮挡的区域沿厚度方向全部或部分刻蚀掉。
  12. 如权利要求11所述的方法，其中，所述方法在形成第一材料层之前，还形成第二导电层，所述第一材料层直接或间接地形成在所述第二导电层上。
  13. 如权利要求11所述的方法，其中，在所述方法中，
    利用具有预设图案的光罩对所述第一材料层进行刻蚀；或，
    通过将所述第一导电层作为光罩来对所述第一材料进行刻蚀。
  14. 如权利要求12所述的方法，其中，在所述方法中，
    利用具有预设图案的光罩对所述第一材料层进行刻蚀；或，
    通过将所述第一导电层作为光罩来对所述第一材料进行刻蚀。
PCT/CN2015/097991 2015-11-05 2015-12-21 阵列基板及其制造方法、液晶显示面板 Ceased WO2017075867A1 (zh)

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