WO2017073369A1

WO2017073369A1 - Method for manufacturing film formation mask

Info

Publication number: WO2017073369A1
Application number: PCT/JP2016/080537
Authority: WO
Inventors: 修二工藤; 江梨子木村; 郁典小林
Original assignee: 株式会社ブイ・テクノロジー
Priority date: 2015-10-30
Filing date: 2016-10-14
Publication date: 2017-05-04
Also published as: JP2017082313A; TW201726289A; TWI682825B; CN108350561B; KR20180077197A; CN108350561A; JP6714995B2

Abstract

The present invention is a method for manufacturing film formation mask for performing: a step for forming, on either the front or back surface of a laser-machinable resin film 4, a resin support layer 2 that is made of a resin material different from said film 4 and that absorbs laser light L1 of a shorter wavelength than visible light; a step for forming a pore pattern 3 that penetrates said film 4 by irradiating laser light L1 from the surface of said film 4 that is opposite to the surface on which said support layer 2 is formed; and a step for selectively removing said support layer 2 from said film 4. As a result, the occurrence of burrs at the edges of the pore pattern is limited using a simple process.

Description

Method for manufacturing film-forming mask

The present invention relates to a method for manufacturing a film formation mask in which an opening pattern is formed on a resin film, and particularly relates to a method for manufacturing a film formation mask capable of suppressing the occurrence of burrs at the edge of the opening pattern by a simple process. .

A conventional method for producing a film-formation mask is to form a metal layer such as copper on the back side of a resin film, irradiate the film with laser light from the side opposite to the surface on which the metal layer is formed, and ablate the film. Thus, an opening pattern is formed, and then the metal layer is etched away from the film (see, for example, Patent Document 1).

Thus, by providing the metal layer on the back surface of the film, it is possible to avoid the accumulation of air on the back surface of the film by the ablation process, and to suppress the generation of burrs at the edge of the opening pattern. it can.

JP 2005-517810 A

However, in such a conventional method for producing a film-forming mask, it is not necessary as a film-forming mask for a finished product, and a metal layer to be removed after formation of the opening pattern is plated on the back surface of the film during the production process. There is a problem that the manufacturing process becomes complicated because it must be formed by vapor deposition or sputtering.

In addition, since a metal layer made of a material different from that of the film is formed on the back surface of the film, there is a possibility that a large internal stress (tensile stress) may be generated in the film when the linear expansion coefficient between them is different. It was. Therefore, if the metal layer is removed from the film after the film is ablated to form an opening pattern at a regular position, the internal stress of the film is released, and as a result, the position of the opening pattern may be shifted. It was.

Furthermore, when a metal sheet having a through hole is laminated on the film surface opposite to the back surface on which the metal layer is formed, the metal layer is plated on the back surface of the film, or the metal When the layer is removed by etching, it is necessary to form a protective layer made of, for example, a resin on the metal sheet on the film surface, which causes a problem that the manufacturing process becomes more complicated.

In order to solve the above problems, a material having a linear expansion coefficient similar to that of the film is desired as the metal layer, and more preferably a material having higher etching property than the metal sheet. However, the selection range of such a metal material is limited, and the material selection is extremely difficult.

Therefore, an object of the present invention is to provide a method for manufacturing a film formation mask that can cope with such problems and suppress the occurrence of burrs at the edge of the opening pattern by a simple process.

In order to achieve the above object, a method for producing a film formation mask according to the present invention comprises a resin material different from the above film on the front or back side of a laser-processable resin film, and has a wavelength longer than that of visible light. Forming a resin support layer that absorbs a short laser beam, and irradiating the laser beam from the side opposite to the surface on which the support layer is formed to form an opening pattern penetrating the film And a step of selectively removing the support layer from the film.

According to the present invention, the support layer made of a resin material different from the film formed on one surface of the resin film can be applied and formed, and the support layer can be easily formed. Further, since the support layer is made of resin like the film, it is easy to select a support layer having a linear expansion coefficient approximate to that of the film. Furthermore, since the film is insoluble, but the support layer can easily select a soluble solvent, the support layer can be selectively removed from the film. Therefore, unlike the prior art in which the back surface of the film is lined with a metal layer, it is possible to suppress the occurrence of burrs at the edge of the opening pattern by a simple manufacturing process.

It is process drawing which shows one Embodiment of the manufacturing method of the film-forming mask by this invention in a cross section. It is a top view explaining the structure of the said film-forming mask, (a) shows one structural example, (b) shows the modification. It is sectional drawing explaining the effect of the manufacturing method of the film-forming mask by this invention, (a) shows the example in which a support layer functions as a stopper of a laser processing, (b) shows the support layer through-penetrating with a film. (C) shows that no burr is generated at the edge of the opening pattern in both cases (a) and (b). In the manufacturing method of the film-forming mask by this invention, it is process drawing explaining the joining process of a flame | frame. It is process drawing explaining the example of a change of the said frame joining process. It is explanatory drawing which shows the example of a change of the formation process of a support layer in the manufacturing method of the film-forming mask by this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a cross-sectional process diagram illustrating an embodiment of a method for producing a film formation mask according to the present invention. This method of manufacturing a film forming mask is a method of manufacturing a film forming mask in which an opening pattern is formed on a resin film, and includes a first step of forming a mask member 1, a second step of forming a support layer 2, This includes a third step of forming the opening pattern 3 and a fourth step of removing the support layer 2.

As shown in FIG. 1A, the first step is a step of forming a mask member 1 by laminating a resin film 4 capable of laser processing and a metal sheet 5 having through holes 6 formed thereon. .

Specifically, the mask member 1 can be formed as follows. That is, a highly conductive metal material such as nickel by electroless plating, vapor deposition or sputtering on a film sheet that transmits visible light such as non-photosensitive polyimide (hereinafter simply referred to as “polyimide”) having a thickness of about 5 μm to 15 μm. Forming a seed layer comprising: a photoresist layer on the seed layer having a thickness of about 30 μm to 50 μm, and then exposing and developing using a photomask to correspond to the through-holes 6 and to form island patterns. Forming a metal sheet 5 having substantially the same thickness as the photoresist by depositing a magnetic metal material such as nickel or a nickel alloy by electroplating on the seed layer outside the island pattern; and After removing the island pattern by dissolving in a solvent or resist stripper, the seed layer under the island pattern is made of a known nickel or the like. And removing using etching liquid, it is carried out.

Alternatively, a resin solution such as polyimide is applied to one surface of a metal sheet of a magnetic metal material such as nickel or a nickel alloy having a thickness of about 30 μm to 50 μm, and then fired at 200 ° C. to 300 ° C. Forming a film 4, applying a photoresist on the other surface of the metal sheet, exposing using a photomask, developing to form a resist mask, and using the resist mask You may implement the step which etches the said metal sheet, provides the through-hole 6 which penetrates a metal sheet, forms the metal sheet 5, and dissolves and removes a resist mask in a solvent or stripping solution.

The linear expansion coefficient of polyimide is 1.5 × 10 ⁻⁵ / ° C. to 5 × 10 ⁻⁵ / ° C., and the linear expansion coefficient of nickel or nickel alloy is 1.0 × 10 ⁻⁵ / ° C. to 1.8. At ^{x10 −5} / ° C., the linear expansion coefficients of both are relatively approximate. Therefore, in the film formation mask having a structure in which the film 4 and the metal sheet 5 are laminated, a polyimide having a linear expansion coefficient close to that of a metal as the film 4 for the purpose of suppressing internal stress generated in the film 4 due to a difference in linear expansion coefficient. It is desirable to use (PI). However, the material of the film 4 is not limited to polyimide, and may be other resin materials capable of laser processing (laser ablation) such as polyethylene terephthalate (PET) and polyether ether ketone (PEEK). . The metal sheet 5 is not limited to nickel or a nickel alloy, but may be other magnetic metal materials such as invar or invar alloy.

In the second step, as shown in FIG. 1B, the surface of the film 4 of the mask member 1 is made of a resin material different from that of the film 4 and has a shorter wavelength than visible light (hereinafter simply referred to as “ This is a step of forming a resin-made support layer 2 that absorbs “laser light”.

More specifically, after the mask member 1 is placed on the stage of the coating apparatus with the film 4 side facing up, the resin liquid 7 of a material that can be processed by being ablated by the laser beam or by irradiation with the laser beam. The support layer 2 is formed by applying a resin liquid 7 of a material whose physical properties change, for example, by a spray 8 and drying it.

In this case, when the support layer 2 is made of a resin material capable of laser processing (laser ablation), the support layer 2 is preferably a polymer material whose processing rate by laser light is equal to or lower than the processing rate of the film 4.

More specifically, the support layer 2 is preferably made of a material having an optical absorptance with respect to a laser beam having a wavelength to be used that is equal to or lower than that of the film 4. The layer 2 is preferably made of, for example, acrylic polymethyl methacrylate (PMMA) having a light absorption rate lower than that of polyimide.

The resin material for the support layer 2 may be polycarbonate (PC), polystyrene (PS) or the like in addition to the acrylic resin. However, these resins are materials having a low light absorption rate and a low processing rate by laser light as compared with acrylic resins.

As described above, the linear expansion coefficient is 1.5 × 10 ⁻⁵ / ° C. to 5 × 10 ⁻⁵ / ° C. for polyimide, whereas 4.5 × 10 ⁻⁵ / ° C. to 7 × for acrylic resin. 10 ⁻⁵ / ° C., both of which are relatively close. Therefore, when the acrylic resin support layer 2 is applied to the polyimide film 4, internal stress generated in the film 4 can be suppressed. Incidentally, the linear expansion coefficient of polycarbonate is about 6.5 × 10 ⁻⁵ / ° C., and the linear expansion coefficient of polystyrene is 6 × 10 ⁻⁵ / ° C. to 8 × 10 ⁻⁵ / ° C.

Further, the support layer 2 may be a photosensitive material whose physical properties are changed by laser light irradiation. In this case, as the support layer 2, a photoresist mainly composed of an epoxy resin, photosensitive polyimide, or the like can be used. These resin materials have the characteristics that the linear expansion coefficient is equivalent to, for example, polyimide, which is the material of the film 4, and the polyimide is soluble in an insoluble organic solvent. Therefore, such a support layer 2 can be easily removed by dissolving in an organic solvent in the fourth step described later.

More preferably, the thickness of the support layer 2 is equal to or less than the thickness of the film 4 in order to further suppress internal stress generated in the film 4 due to a difference in linear expansion coefficient between the film 4 and the support layer 2. It is desirable that

In the third step, as shown in FIG. 1 (c), the laser beam L 1 is irradiated from the side opposite to the surface on which the support layer 2 of the mask member 1 is formed, and the inside of the through hole 6 of the metal sheet 5. Is a step of forming the opening pattern 3 by penetrating the film 4 through the portion of the film 4 corresponding to the above.

The laser used here generates laser light having a wavelength of 400 nm or less, and emits, for example, KrF 248 nm excimer laser, 1064 nm third harmonic (355 nm) or fourth harmonic (266 nm) laser light. YAG laser.

Generally, a polymer material has a higher light absorption coefficient as the wavelength of laser light is shorter. It is known that polyimide absorbs light sharply above the visible region, and PMMA rapidly absorbs light near the near ultraviolet region. Therefore, it can be said that PMMA having a wavelength in the range of 248 nm to 355 nm and having a light absorption rate lower than that of polyimide is a suitable material for the support layer 2.

The opening pattern 3 is formed by a plurality of shots of the laser beam L1 using a laser processing apparatus. This laser processing apparatus illuminates a light shielding mask having an opening similar to the shape of the opening pattern 3 by uniformizing the illuminance distribution of the laser light L1 emitted from the laser emitting pulse light by the integrator optical system. The laser beam L1 that has passed through the opening is condensed on the film 4 in the through hole 6 of the metal sheet 5 by a condenser lens.

In the one through hole 6 of the metal sheet 5, one opening pattern 3 may be formed as shown in FIG. 2A, and a plurality of the opening patterns 3 are formed as shown in FIG. An opening pattern 3 may be formed.

The film 4 is irradiated with the laser beam L1 with reference to a reference mark (for example, an alignment mark) formed in advance on the mask member 1 on the XY stage 9 on which the mask member 1 is placed in an XY two-dimensional direction. This is performed by step-shifting by a predetermined distance.

Alternatively, the mask member 1 is positioned and placed on a reference substrate disposed on the XY stage 9 and provided with a reference mark that is an irradiation target of the laser beam L1, and the laser beam L1 is irradiated toward the reference mark. May be. In this case, when the film 4 is to transmit visible light, the reference mark is positioned in the through hole 6 of the metal sheet 5 while observing the surface of the reference substrate with the camera through the film 4. The member 1 and the reference substrate are aligned. Further, the reference mark is detected by the camera through the film 4 and, for example, the position coordinates of the reference mark with the initial position of the camera as the origin are calculated. .

The reference substrate may be, for example, an organic EL display substrate, and the reference mark may be an anode electrode provided in advance on the substrate. The laser processing is not limited to the one performed by moving the XY stage 9, and may be performed by moving the illumination optical system side of the laser processing apparatus.

FIG. 3 is a cross-sectional view for explaining the effect of the method for manufacturing a film formation mask according to the present invention. When the laser processing rate of the support layer 2 is smaller than the laser processing rate of the film 4, or when the support layer 2 is a photosensitive resin that is not laser processed, as shown in FIG. It can function as a stopper for laser processing. In this case, for example, even if the mask member 1 is placed on the reference substrate and laser-processed, the support layer 2 has only the surface violated or not processed at all. ) Is not likely to be laser processed. And since the back surface of the film 4 corresponding to the edge 3a of the opening pattern 3 is backed by the support layer 2, the generation | occurrence | production of a burr | flash is suppressed.

On the other hand, when the laser processing rate of the film 4 and the laser processing rate of the support layer 2 are close to each other, the support layer 2 may also be subjected to the penetration processing after the opening pattern 3 has been penetrated into the film 4. However, in this case, as shown in FIG. 3B, the burr 11 is generated only at the edge of the through hole of the support layer 2, and is not generated at the edge 3 a of the opening pattern 3 of the film 4. Moreover, since the support layer 2 is removed later, the burr 11 of the support layer 2 does not affect the film formation mask.

Thus, in any of the above cases, the completed film formation mask from which the support layer 2 has been removed has a burr on the edge 3a of the opening pattern 3 of the film 4, as shown in FIG. There is no occurrence, and favorable laser processing of the opening pattern 3 becomes possible.

The fourth step is a step of removing the support layer 2 as shown in FIG. The support layer 2 is selectively removed from the film 4 by being dissolved in a solvent, a stripping solution or an etching solution. Alternatively, the support layer 2 may be selectively removed from the film 4 by chemical dry etching.

For example, polyimide as the film 4 is insoluble in almost all organic solvents, but acrylic resin as the support layer 2 is soluble in organic solvents such as acetone, toluene, and xylene. Polycarbonate and polystyrene are soluble in aromatic and chlorinated solvents. Further, as described above, a photoresist made mainly of photosensitive polyimide or epoxy resin is soluble in an organic solvent.

In general, for example, a polymer containing a benzene ring such as polyimide is difficult to dry-etch with a reactive gas containing CH ₄ , but an acrylic resin-based polymer with many oxygen atoms is easily dry-etched with the reactive gas. It is known that.

Thus, for example, acrylic resin and photosensitive resin are less likely to be laser-processed than, for example, polyimide used as the film 4, can suppress the generation of internal stress on the film 4, and can be selectively removed from the film 4. It is a material suitable for the support layer 2.

In the fourth step, it is preferable to clean and remove smear generated by the laser ablation process of the film 4 simultaneously with the removal of the support layer 2.

In the above embodiment, the case where the film formation mask has a structure in which the film 4 and the metal sheet 5 are laminated has been described. However, the film formation mask is a frame of a magnetic metal material made of, for example, Invar or Invar alloy. It may include a frame.

In this case, the frame is a mask member either before or after the second step, that is, between the first step and the second step, or between the second step and the third step. 1 is preferable.

Specifically, when a frame is attached between the first step and the second step, the following steps are performed.
First, after completion of the first step, as shown in FIG. 4A, the mask member 1 is shown in FIG. 4 with the metal sheet 5 side of the mask member 1 facing the one end face 10 a of the frame 10. A tension is applied in the direction of arrow F, and the frame 10 is stretched.

Next, as shown in FIG. 4B, for example, green to near-infrared pulsed laser light L <b> 2 is irradiated from the film 4 side to a plurality of positions on the peripheral portion of the mask member 1, and the metal sheet 5 is attached to the frame 10. Spot-welded to one end face 10a.

Next, as shown in FIG. 4 (c), a second step is performed in which a resin liquid 7 different from the film 4 is applied from the film 4 side to form the support layer 2 on the surface of the film 4.

Further, when the frame 10 is attached between the second process and the third process, it is performed as follows.
First, after completion of the second step, as shown in FIG. 5A, the mask member 1 is shown in FIG. 5 with the metal sheet 5 side of the mask member 1 facing the one end face 10 a of the frame 10. A tension is applied in the direction of arrow F, and the frame 10 is stretched.

Next, as shown in FIG. 5B, the laser beam L <b> 2 is irradiated from the film 4 side to a plurality of positions on the peripheral portion of the mask member 1, and the metal sheet 5 is spot welded to the one end face 10 a of the frame 10. .

Next, as shown in FIG. 5C, the laser beam L <b> 1 is irradiated from the metal sheet 5 side, the film 4 is penetrated through the portion of the film 4 corresponding to the inside of the through hole 6 of the metal sheet 5, and the opening pattern 3. A third step of forming is performed.

In addition, in the said embodiment, although the case where the support layer 2 was apply | coated to the film 4 surface on the opposite side to the metal sheet 5 of the member 1 for masks was demonstrated, the support layer 2 is shown to Fig.6 (a). Thus, it may be applied on the metal sheet 5. In this case, the laser beam L1 is irradiated from the side opposite to the surface on which the support layer 2 of the mask member 1 is formed as shown in FIG. The opening pattern 3 is formed by penetrating the film 4 through the film 4.

Further, in the above description, the case where the film formation mask has a structure in which the film 4 and the metal sheet 5 are laminated has been described. However, the present invention is not limited to this, and the film formation mask includes the metal sheet 5. It may be a structure not provided with.

DESCRIPTION OF SYMBOLS 1 ... Mask member 2 ... Support layer 3 ... Opening pattern 4 ... Film 5 ... Metal sheet 6 ... Through-hole 10 ... Frame L1 ... Laser beam (for opening pattern formation)

Claims

A process of forming a resin support layer that absorbs laser light having a wavelength shorter than that of visible light, on either one of the front and back surfaces of the laser-processable resin film, made of a resin material different from the film,
Irradiating a laser beam from the opposite side of the film on which the support layer is formed to form an opening pattern penetrating the film;
Selectively removing the support layer from the film;
A method of manufacturing a film formation mask, characterized in that:
The method for manufacturing a film formation mask according to claim 1, wherein the support layer is made of a material that can be ablated by the laser beam.
3. The method of manufacturing a film formation mask according to claim 2, wherein a processing rate of the support layer by the laser light is equal to or lower than a processing rate of the film.
2. The method of manufacturing a film formation mask according to claim 1, wherein the support layer is made of a material whose physical properties are changed by irradiation with the laser beam.
The method of manufacturing a film formation mask according to any one of claims 1 to 4, wherein a thickness of the support layer is equal to or less than a thickness of the film.
5. The film forming mask according to claim 1, wherein in the step of selectively removing the support layer, the support layer is removed by dissolving in a solvent, a stripping solution, or an etching solution. Manufacturing method.
The method of manufacturing a film formation mask according to any one of claims 1 to 4, wherein, in the step of selectively removing the support layer, the support layer is removed by chemical dry etching.
Before carrying out the step of forming the support layer, a mask is formed by laminating a metal sheet provided with a through-hole having a size that encloses the opening pattern on one of the front and back surfaces of the film in which the opening pattern is not processed. The method for producing a film formation mask according to any one of claims 1 to 4, wherein a member for forming is formed.
9. The method of manufacturing a film forming mask according to claim 8, wherein the metal sheet is stretched and fixed to a frame-shaped frame before or after the step of forming the support layer. .