GB2488575A - Method for forming a wiring pattern by laser irradiation - Google Patents

Method for forming a wiring pattern by laser irradiation Download PDF

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Publication number
GB2488575A
GB2488575A GB201103543A GB201103543A GB2488575A GB 2488575 A GB2488575 A GB 2488575A GB 201103543 A GB201103543 A GB 201103543A GB 201103543 A GB201103543 A GB 201103543A GB 2488575 A GB2488575 A GB 2488575A
Authority
GB
United Kingdom
Prior art keywords
light
sensitive material
wiring pattern
forming
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB201103543A
Other versions
GB201103543D0 (en
Inventor
Chien-Han Ho
Hua-Min Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cretec Co Ltd
Original Assignee
Cretec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cretec Co Ltd filed Critical Cretec Co Ltd
Priority to GB201103543A priority Critical patent/GB2488575A/en
Publication of GB201103543D0 publication Critical patent/GB201103543D0/en
Publication of GB2488575A publication Critical patent/GB2488575A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/102—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding of conductive powder, i.e. metallic powder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
    • H05K3/387—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive for electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0522—Using an adhesive pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax, thiol

Abstract

A method for forming a wiring pattern by laser irradiation comprising the steps of coating a light-sensitive material on a substrate 10 to form a light-sensitive layer, irradiating a laser beam on the light-sensitive material of the substrate to form a pattern including an exposed region 31 and an unexposed region 33, and forming a metallic wiring pattern 45 by immersing the substrate 10 into a solution having a plurality of metallic nano-particles; wherein the metallic nano-particles are easily bonded to the straighter molecular structure of the light-sensitive material in the exposed region 31 for forming a conducting wiring pattern 45. Preferably the light-sensitive material is a thiophenyl-azobenzene material, further the laser light is preferably ultra-violet (UV) laser light. The laser irradiation method has advantages such as high-power, high-density, high-directionality and monochromaticity, such that product quality can be effectively controlled. Moreover, the laser irradiated light-sensitive material can form a molecular structure that is easily bonded to the metallic particles. As a result, the chemical wastes are substantially reduced.

Description

METHOD FOR FORMING A WIRING PATTERN BY LASER
IRRADIATION
BACKGROUND OF THE INVENTION
1. Field of the Invention
110001] The present invention generally relates to a method for forming a wiring pattern by laser irradiation, and in particular to a method using laser to irradiate a light-sensitive material to form a pattern and the inadiated light-sensitive material attaching metallic nano-particles to form a metallic wiring pattern.
2. The Prior Arts
[0002] Conventional printing methods for forming a wiring pattern on a substrate can be classified generally into a subtractive method and an additive method. The subtractive method generally uses photolithography or a pattern mask to etch a portion of a metallic layer on the substrate, thereby forming a wiring pattern. Subsequently, the photo-resist layer is removed. One of the disadvantages associated with this method is that it requires 1 5 multiple electro-chemical processing steps such as electro-plating, chemical etching, chemical stripping, and cleaning, which produces a significant amount of chemical wastes that may be a source of pollution if the chemical wastes are discharged to the environment without proper post-treatment.
[0003] The additive method generally forms the metallic wiring pattern on the substrate by deposition techniques, such as evaporation deposition, sputtering deposition or chemical vapor deposition. However, the equipment utilized in the additive method is usually more expensive and takes more space. In addition, the additive method requires stricter processing conditions and processing environment. Moreover, proper maintenance of the equipment directly affects the quality of the products produced using the additive method, which requires a stricter control procedure.
SUMMARY OF THE INVENTION
[0004] An objective of the present invention is to provide a method for forming a wiring pattern by laser irradiation which overcomes the aforementioned disadvantages of the conventional methods. The method may include the steps of coating a light-sensitive material on a substrate to form a light-sensitive layer, inadiating a laser beam onto the light-sensitive layer, and forming a metallic wiring pattern. In the step of laser irradiation, the substrate is placed in a laser exposure equipment, and a laser beam is irradiated onto the light-sensitive layer of the substrate to form a pattern which includes an exposed region exposed to laser irradiation and an unexposed region unexposed to laser irradiation.
According to an embodiment, the light-sensitive material may include TDBO1 (containing thiophenol-azobenzene derivatives). For example, in the exposed regions, molecular structure of the TDBO 1 is changed into a trans-isomer straighter molecular structure; whereas molecular structure of the TDBO1 in the unexposed regions remains a cis-isomer curved molecular structure. According to another embodiment, the wavelength of the 1 0 laser beam that can change the molecular structure of the light-sensitive material may be in the ultraviolet range of wavelength.
[0005] In the step of forming a metallic wiring pattern, the substrate having the exposed and unexposed regions is immersed into a liquid solution having metallic nano-particles. Because of the trans-isomer straighter molecular structure in the exposed 1 5 regions, the metallic nano-particles are easily bonded to the light-sensitive material in the exposed regions for forming a metallic wiring pattern.
[0006] Another objective of the present invention includes the use of laser irradiation for forming straighter molecular structures, such that metallic particles may be easily attached to form a metallic wiring pattern. The laser irradiation method according to the present invention has advantages, such as high power, high density, high directionality and monochromaticity, and therefore the product quality can be effectively controlled.
Moreover, the laser irradiated light-sensitive material forms a molecular structure that is easily bonded to the metallic particles for forming the wiring pattern. As a result, chemical wastes produced from the conventional methods are substantially reduced.
[0007] It is to be understood that both the foregoing description and the following description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
[0008] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description, serve to explain the principles of the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
[00091 Fig. 1 is a flowchart illustrating an exemplary method for forming a wiring pattern by laser irradiation according to the present invention; and [00101 Figs. 2A-2D are schematic views illustrating the steps of the exemplary method of Fig. 1.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0011] Fig. 1 is a flowchart illustrating a method 51 for forming a wiring pattern by laser irradiation according to an embodiment of the present invention and Figs. 2A-2D illustrating the steps of the method Si. The method 51 comprises the step (S ii) of 1 0 coating a light-sensitive material on a substrate 10 to form a light-sensitive layer 20 as shown in Fig. 2A.
[0012] The method Si comprises the step (S 12) of placing the substrate 10 having the light-sensitive layer 20 in a laser exposure equipment and irradiating a laser beam on the light-sensitive layer 20 to form a pattern that includes one or more exposed regions 31 exposed to laser irradiation and one or more unexposed regions 33 unexposed to laser irradiation as shown in Fig. 2B. The molecular structure of the light-sensitive material in the one or more unexposed regions 33 may have a cis-isomer slightly curved molecular structure. After laser irradiation, the molecular structure of the light-sensitive material in the one or more exposed regions 31 may be changed into a trans-isomer straighter molecular structure.
[0013] The method 51 comprises the step (S15) of forming a wiring pattern.
Referring to Figs. 2C and 2D, the substrate 10 having the one or more exposed regions 31 and the one or more unexposed regions 33 is immersed in a liquid solution 40 including a plurality of metallic nano-particles 45. Due to the cis-isomer straighter molecular structure in the one or more exposed regions 31, the metallic nano-particles 45 may be easily attached to the light-sensitive material in the one or more exposed regions 31. After the substrate 10 is removed from the liquid solution 40 and undergoes cleaning and drying, the metallic nano-particles 45 may be attached to the light-sensitive material in the regions 31 thereby forming a metallic wiring pattern 50.
[0014] According to the present invention, the light-sensitive material may include at least TDBOI (containing thiophenol-azobenzene derivatives). The wavelength of the laser beam that can change the molecular structure of the light-sensitive material may be in the ultraviolet range of wavelength.
[0015] The invention as described herein includes the use of patterning laser irradiation for forming straighter molecular structures, such that the metallic particles 45 may be easily attached to form the metallic wiring pattern 50. The laser irradiation has multiple advantages, such as high power, high density, high directionality and monochromaticity, such that product quality can be effectively controlled. Moreover, the laser irradiated light-sensitive material can form the cis-isomer straighter molecular structure that may be easily attached with metallic particles. As a result, chemical wastes 1 0 can be substantially reduced.
Although the present invention has been described with reference to the preferred embodiments thereof, it is apparent to those skilled in the art that a variety of modifications and changes may be made without departing from the scope of the present invention which is intended to be defined by the appended claims.

Claims (6)

  1. WHAT IS CLAIMED IS: 1. A method for forming a wiring pattern by laser irradiation, comprising the steps of: coating a light-sensitive material on a substrate to form a light-sensitive layer; inadiating a laser beam on the light-sensitive material of the substrate to form a pattern which includes an exposed region and an unexposed region; and forming a metallic wiring pattern by placing the substrate into a solution having a plurality of metallic nano-particles, whereby the metallic nano-particles are attached to the exposed region, wherein a molecular structure of the light-sensitive material in the exposed region is 1 0 changed by laser irradiation.
  2. 2. The method as claimed in claim 1, wherein the light-sensitive material comprises TDBO1.
  3. 3. The method as claimed in claim 2, wherein a wavelength of the laser beam is in an ultraviolet range of wavelengths.
    1 5
  4. 4. The method as claimed in claim 1, wherein the light-sensitive material has a straighter molecular structure in the exposed region.
  5. 5. The method as claimed in claim 1, wherein the light-sensitive material has a curved molecular structure in the unexposed region.
  6. 6. The method as claimed in claim 1, further comprising the step of cleaning and drying the substrate having the metallic wiring pattern.
GB201103543A 2011-03-02 2011-03-02 Method for forming a wiring pattern by laser irradiation Withdrawn GB2488575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB201103543A GB2488575A (en) 2011-03-02 2011-03-02 Method for forming a wiring pattern by laser irradiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB201103543A GB2488575A (en) 2011-03-02 2011-03-02 Method for forming a wiring pattern by laser irradiation

Publications (2)

Publication Number Publication Date
GB201103543D0 GB201103543D0 (en) 2011-04-13
GB2488575A true GB2488575A (en) 2012-09-05

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Family Applications (1)

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GB201103543A Withdrawn GB2488575A (en) 2011-03-02 2011-03-02 Method for forming a wiring pattern by laser irradiation

Country Status (1)

Country Link
GB (1) GB2488575A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8965159B1 (en) 2013-11-07 2015-02-24 International Business Machines Corporation Implementing twisted pair waveguide for electronic substrates
CN109678970A (en) * 2018-12-25 2019-04-26 深圳市太赫兹科技有限公司 Sodium carboxymethylcellulose isomer generation method, diet food production method and diet food for food

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11258785A (en) * 1998-03-09 1999-09-24 Fuji Xerox Co Ltd Image forming device
US20040191703A1 (en) * 2003-03-27 2004-09-30 Soper Steven A. Photoresist-free micropatterning on polymer surfaces
WO2006093193A1 (en) * 2005-03-02 2006-09-08 Mitsubishi Chemical Corporation Metal pattern, organic electronic device and process for producing the same
EP1835346A1 (en) * 2006-03-14 2007-09-19 Canon Kabushiki Kaisha Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device
WO2008140272A2 (en) * 2007-05-15 2008-11-20 Lg Chem, Ltd. Resin composition containing catalyst precursor for electroless plating in forming electro-magnetic shielding layer, method of forming metallic patten using the same, and metallic pattern formed by the same method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11258785A (en) * 1998-03-09 1999-09-24 Fuji Xerox Co Ltd Image forming device
US20040191703A1 (en) * 2003-03-27 2004-09-30 Soper Steven A. Photoresist-free micropatterning on polymer surfaces
WO2006093193A1 (en) * 2005-03-02 2006-09-08 Mitsubishi Chemical Corporation Metal pattern, organic electronic device and process for producing the same
EP1835346A1 (en) * 2006-03-14 2007-09-19 Canon Kabushiki Kaisha Photosensitive silane coupling agent, method of forming pattern, and method of fabricating device
WO2008140272A2 (en) * 2007-05-15 2008-11-20 Lg Chem, Ltd. Resin composition containing catalyst precursor for electroless plating in forming electro-magnetic shielding layer, method of forming metallic patten using the same, and metallic pattern formed by the same method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8965159B1 (en) 2013-11-07 2015-02-24 International Business Machines Corporation Implementing twisted pair waveguide for electronic substrates
CN109678970A (en) * 2018-12-25 2019-04-26 深圳市太赫兹科技有限公司 Sodium carboxymethylcellulose isomer generation method, diet food production method and diet food for food

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Publication number Publication date
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