TWI642805B - Methods for manufacturing deposition mask and deposition mask - Google Patents

Methods for manufacturing deposition mask and deposition mask Download PDF

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Publication number
TWI642805B
TWI642805B TW104101616A TW104101616A TWI642805B TW I642805 B TWI642805 B TW I642805B TW 104101616 A TW104101616 A TW 104101616A TW 104101616 A TW104101616 A TW 104101616A TW I642805 B TWI642805 B TW I642805B
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metal material
magnetic metal
material layer
film
gap
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TW104101616A
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Chinese (zh)
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TW201533266A (en
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水村通伸
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日商V科技股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Abstract

本發明係一種層積了設有預定之既定形狀的開口圖案之樹脂製薄膜層,以及設有可內藏該開口圖案之大小的間隙之磁性金屬材料層的構造之成膜遮罩之製造方法,該開口圖案係從兩面側將雷射光照射至對應於該間隙之薄膜層一部分,以貫穿該薄膜層而加以形成。 The present invention is a method for manufacturing a film-forming mask in which a resin film layer provided with an opening pattern of a predetermined predetermined shape and a magnetic metal material layer having a gap of the size of the opening pattern are laminated The opening pattern is formed by irradiating laser light from both sides to a part of the thin film layer corresponding to the gap to penetrate the thin film layer.

Description

成膜遮罩之製造方法及成膜遮罩 Manufacturing method of film forming mask and film forming mask

本發明係關於一種層積了形成有開口圖案之樹脂製薄膜層與磁性金屬材料層的構造之成膜遮罩之製造方法,特別是關於一種在藉由雷射加工來形成開口圖案時,可抑制於開口圖案緣部產生毛邊的成膜遮罩之製造方法及成膜遮罩。 The present invention relates to a method of manufacturing a film-forming mask in which a thin film layer made of a resin with an opening pattern and a magnetic metal material layer are laminated, and particularly to a method of forming an opening pattern by laser processing. Method for manufacturing film-forming mask for suppressing generation of burrs at the edge of opening pattern and film-forming mask.

以往此種遮罩的製造方法係使用經圖案化之遮罩來對樹脂製薄膜照射例如KrF準分子雷射的約248nm短波長光束,而去除該樹脂製薄膜以形成開口圖案(例如,參照日本特表2005-517810號公報)。 Conventional manufacturing methods for such masks use a patterned mask to irradiate a resin film with a short-wavelength beam of about 248 nm, such as KrF excimer laser, and remove the resin film to form an opening pattern (for example, see Japan Special Table No. 2005-517810).

然而,此般以往遮罩之製造方法中,由於通常係將雷射光照射至樹脂製薄膜之一邊面側而形成開口圖案,故會有在開口圖案之雷射光照射側相反側的開口緣部產生切剩(以下稱為「毛邊」)之問題。 However, in the conventional mask manufacturing method, since the laser light is usually irradiated to one side of the resin film to form the opening pattern, an opening edge portion on the opposite side of the opening pattern from the laser light irradiation side may occur The problem of cutting leftovers (hereinafter referred to as "burrs").

此般毛邊會有成為所謂形成成膜陰影而讓所成膜之薄膜圖案的緣部產生形狀不均勻,或在成膜遮罩與被成膜基板之間產生間隙而使得成膜材料容易捲入至遮罩下側,而讓薄膜圖案緣部模糊之問題的產生原因之虞。 In this way, the burrs may become so-called film-forming shadows, which may cause unevenness in the shape of the edges of the formed film pattern, or a gap between the film-forming mask and the film-forming substrate to make the film-forming material easily entangle To the lower side of the mask, the problem of blurring the edge of the film pattern may be caused.

於是,本發明係對應於此般問題點,其目的在於提供一種在藉由雷射加工來形成開口圖案時,可抑制於開口圖案緣部產生毛邊的成膜遮罩之製造方法及成膜遮罩。 Therefore, the present invention corresponds to such a problem, and an object of the present invention is to provide a method for manufacturing a film-forming mask capable of suppressing the occurrence of burrs at the edge of the opening pattern when forming an opening pattern by laser processing and a film-forming mask cover.

為了達成上述目的,本發明的成膜遮罩之製造方法係層積了設有預定之既定形狀的開口圖案之樹脂製薄膜層,以及設有可內藏該開口圖案之大 小的間隙之磁性金屬材料層的構造之成膜遮罩之製造方法,該開口圖案係從兩面側將雷射光照射至對應於該間隙之薄膜層一部分,以貫穿該薄膜層而加以形成。 In order to achieve the above object, the method for manufacturing a film-forming mask of the present invention is to laminate a resin film layer provided with an opening pattern of a predetermined predetermined shape, and to provide a large layer capable of containing the opening pattern The manufacturing method of the film forming mask for the structure of the magnetic metal material layer with a small gap, the opening pattern is formed by irradiating laser light from both sides to a part of the thin film layer corresponding to the gap to penetrate the thin film layer.

又,本發明之成膜遮罩係層積了設有預定之既定形狀的開口圖案之樹脂製薄膜層,以及設有可內藏該開口圖案之大小的間隙之磁性金屬材料層的構造之成膜遮罩,該開口圖案係從兩面側將雷射光照射至對應於該間隙之薄膜層一部分,以貫穿該薄膜層。 Moreover, the film-forming mask of the present invention is formed by laminating a resin film layer provided with an opening pattern of a predetermined predetermined shape, and a magnetic metal material layer provided with a gap of a size that can contain the opening pattern In the film mask, the opening pattern irradiates the laser light to a part of the thin film layer corresponding to the gap from both sides to penetrate the thin film layer.

根據本發明,由於從薄膜層兩面側照射雷射光,來形成開口圖案,故可抑制於薄膜層之磁性金屬材料層相反側(與被成膜基板之密合面側)的開口圖案緣部產生毛邊。從而,便可防止開口圖案之該毛邊會成為陰影,並且,可防止因毛邊之存在而在薄板層與被成膜基板之間產生間隙。藉此,便可提升含有形狀及位置精度之薄膜圖案的形成精度。 According to the present invention, since the laser light is irradiated from both sides of the thin film layer to form the opening pattern, generation of the edge of the opening pattern on the side opposite to the magnetic metal material layer of the thin film layer (the side close to the surface of the film-forming substrate) Raw edges. Therefore, it is possible to prevent the burrs of the opening pattern from becoming shadows, and to prevent a gap between the thin plate layer and the film-forming substrate due to the burrs. With this, the formation accuracy of the thin film pattern including the shape and position accuracy can be improved.

1‧‧‧薄膜層 1‧‧‧ film layer

1a‧‧‧一面 1a‧‧‧one side

1b‧‧‧另面 1b‧‧‧other side

2‧‧‧磁性金屬材料層 2‧‧‧ Magnetic metal material layer

2a‧‧‧面 2a‧‧‧ noodles

3‧‧‧框體 3‧‧‧Frame

4‧‧‧開口圖案 4‧‧‧ opening pattern

5‧‧‧第1凹部 5‧‧‧First recess

6‧‧‧第2凹部 6‧‧‧Second recess

7‧‧‧間隙 7‧‧‧ Clearance

8‧‧‧條紋圖案 8‧‧‧ Stripe pattern

9‧‧‧框狀圖案 9‧‧‧Frame pattern

10‧‧‧開口 10‧‧‧ opening

11‧‧‧遮罩用構件 11‧‧‧Mask components

12‧‧‧對位標記 12‧‧‧Alignment mark

13‧‧‧貫穿孔 13‧‧‧Through hole

14‧‧‧凹部 14‧‧‧recess

P‧‧‧線 P‧‧‧ line

O‧‧‧線 O‧‧‧ line

L‧‧‧雷射光 L‧‧‧Laser

圖1係顯示本發明成膜遮罩一實施形態之圖式,(a)係俯視圖,(b)係(a)之O-O線剖面箭頭視圖,(c)係(a)之P-P線剖面箭頭視圖,(d)係(c)之部分放大剖面圖。 1 is a diagram showing an embodiment of the film-forming mask of the present invention, (a) is a top view, (b) is a line OO line arrow view of (a), (c) is a line PP line arrow view of (a) , (D) is a partially enlarged cross-sectional view of (c).

圖2係顯示本發明成膜遮罩的磁性金屬材料層之變形例的俯視圖。 2 is a plan view showing a modification of the magnetic metal material layer of the film-forming mask of the present invention.

圖3係以本發明成膜遮罩之製造方法來說明開口圖案的形成例之圖式,為顯示第1凹部之形成工序之剖面圖,(a)係顯示開始雷射加工,(b)係顯示結束雷射加工,(c)係第1凹部之放大剖面圖。 3 is a diagram illustrating an example of forming an opening pattern using the method for manufacturing a film-forming mask of the present invention, which is a cross-sectional view showing the forming process of a first concave portion, (a) shows the start of laser processing, (b) shows (C) is an enlarged cross-sectional view of the first recessed portion, showing that the laser processing is completed.

圖4係以本發明成膜遮罩之製造方法來說明開口圖案的形成例之圖式,為顯示第2凹部之形成工序之剖面圖,(a)係顯示開始雷射加工,(b)係顯示結束雷射加工,(c)係第2凹部之放大剖面圖。 FIG. 4 is a diagram illustrating an example of forming an opening pattern by the method for manufacturing a film-forming mask of the present invention, and is a cross-sectional view showing a forming process of a second concave portion, (a) shows that laser processing is started, (b) shows (C) is an enlarged cross-sectional view of the second concave portion showing that the laser processing is completed.

圖5係以本發明成膜遮罩之製造方法來說明開口圖案的形成變形例之圖式,為顯示貫穿孔之形成工序之剖面圖,(a)係顯示開始雷射加工,(b)係顯示結束雷射加工,(c)係貫穿孔之放大剖面圖。 5 is a diagram illustrating a modification of the formation of an opening pattern by the method for manufacturing a film-forming mask of the present invention, which is a cross-sectional view showing a process of forming a through hole, (a) shows the start of laser processing, (b) shows (C) is an enlarged cross-sectional view of the through-hole showing the completion of laser processing.

圖6係以本發明成膜遮罩之製造方法來說明開口圖案的形成變形例之圖式,為顯示凹部之形成工序之剖面圖,(a)係顯示開始雷射加工,(b)係顯示結束雷射加工,(c)係凹部之放大剖面圖。 6 is a diagram illustrating a modification of the formation of an opening pattern by the method for manufacturing a film-forming mask of the present invention, which is a cross-sectional view showing the forming process of a recessed part, (a) shows that laser processing is started, (b) shows After the laser processing is completed, (c) is an enlarged cross-sectional view of the concave portion.

以下,便基於添附圖式來詳細地說明本發明之實施形態。圖1係顯示本發明成膜遮罩一實施形態之圖式,(a)係俯視圖,(b)係(a)之O-O線剖面箭頭視圖,(c)係(a)之P-P線剖面箭頭視圖,(d)係(c)之一部分放大剖面圖。該成膜遮罩係在被成膜基板上形成預定形狀的複數薄膜圖案,並構成為具備有薄膜層1、磁性金屬材料層2以及框體3。 Hereinafter, an embodiment of the present invention will be described in detail based on the attached drawings. 1 is a diagram showing an embodiment of the film-forming mask of the present invention, (a) is a top view, (b) is a line OO line arrow view of (a), (c) is a line PP line arrow view of (a) , (D) is a partially enlarged sectional view of (c). The film-forming mask forms a plurality of thin-film patterns of a predetermined shape on a film-forming substrate, and is configured to include a thin-film layer 1, a magnetic metal material layer 2, and a frame 3.

該薄膜層1係用以在被成膜基板上形成薄膜圖案之主遮罩,且如圖1(a)所示,係於例如厚度為5μm~30μm左右之例如聚醯亞胺或聚對苯二甲酸乙二脂(PET)等會讓可見光穿透之樹脂製薄膜,具備有預定形狀之開口圖案4。較佳地,最好是線膨脹係數為近似於作為成膜基板(以下,僅稱為「基板」)之玻璃的線膨脹係數3×10-6~5×10-6/℃左右的聚醯亞胺。 The thin film layer 1 is used for forming a main mask of a thin film pattern on a film-forming substrate, and as shown in FIG. 1 (a), for example, polyimide or polyparaphenylene having a thickness of about 5 μm to 30 μm, for example Ethylene dicarboxylate (PET) and other resin films that allow visible light to pass through are provided with opening patterns 4 of a predetermined shape. Preferably, it is preferable that the linear expansion coefficient is a polyacrylic acid having a linear expansion coefficient approximately 3 × 10 −6 to 5 × 10 −6 / ° C, which is similar to the linear expansion coefficient of glass as a film-forming substrate (hereinafter, simply referred to as “substrate”) Imine.

詳而言之,該開口圖案4如圖1(a)所示,係具有與該薄膜圖案相同形狀,且對應於薄膜圖案而配置為縱橫矩陣狀,並同圖(d)所示,由形成於薄膜層1之一面1a,例如4μm~5μm左右深度的第1凹部5以及於薄膜層1之另面1b以到達第1凹部5之深度來加以形成的第2凹部6所構成。該情況較佳地,最好是第2凹部6之開口面積會較第1凹部5之開口面積要寬。另外,第1凹部5如後述般,亦可為貫穿薄膜層1之貫穿孔13(參照圖5)。 In detail, as shown in FIG. 1 (a), the opening pattern 4 has the same shape as the film pattern, and is arranged in a vertical and horizontal matrix corresponding to the film pattern, and is shown in FIG. On one surface 1 a of the thin film layer 1, for example, a first concave portion 5 having a depth of about 4 μm to 5 μm and a second concave portion 6 formed on the other surface 1 b of the thin film layer 1 so as to reach the depth of the first concave portion 5. In this case, it is preferable that the opening area of the second recess 6 is wider than the opening area of the first recess 5. In addition, as described later, the first concave portion 5 may be a through hole 13 (see FIG. 5) penetrating the thin film layer 1.

該薄膜層1之另面1b側係層積設置有磁性金屬材料層2。該磁性金屬材料層2係由設置有可內藏開口圖案4之大小的間隙7,且例如厚度為10μm~50μm左右的例如鎳、鎳合金、銦或銦合金等磁性金屬材料所構成,並可在成膜時藉由配設於基板內面之磁石來吸引而達成讓該薄膜層1密合於基板成膜面用的機能。 A magnetic metal material layer 2 is laminated on the other surface 1b side of the thin film layer 1. The magnetic metal material layer 2 is composed of a magnetic metal material such as nickel, nickel alloy, indium or indium alloy with a gap 7 in which the opening pattern 4 can be embedded and having a thickness of about 10 μm to 50 μm, for example. During the film formation, the magnet arranged on the inner surface of the substrate is attracted to achieve the function of making the thin film layer 1 adhere to the film formation surface of the substrate.

該情況,如圖1(a)~(c)所示,該間隙7係貫穿磁性金屬材料層2而加以設置之狹縫。或者,如圖2所示,亦可為在構成磁性金屬材料層2之一部分的細長狀複數條紋圖案中,鄰接之該條紋圖案8之間的部分。磁性金屬材料層2在包含圖2所示之條紋圖案8構造的情況,會因磁性金屬材料層2與薄膜層1之間的線膨脹係數不同而使得產生於薄膜層1之內部應力變小,可抑制在層積後雷射加工所形成之開口圖案4的位置偏差。從而,便有使得磁性金屬材料之選擇範圍變廣的效果。另外,該條紋圖案8亦可於 其長軸方向而被分割為長度較短之複數單位條紋圖案。藉此,便可使得於產生於薄膜層1之內部應力變得更小。圖2中,符號9係具有內包該複數條紋圖案8之大小的開口,並層積於薄膜層1周緣部而構成磁性金屬材料層2之一部分的框狀圖案。 In this case, as shown in FIGS. 1 (a) to (c), the gap 7 is a slit provided through the magnetic metal material layer 2. Alternatively, as shown in FIG. 2, it may be a portion between the stripe patterns 8 adjacent to each other among the elongated stripe patterns constituting a part of the magnetic metal material layer 2. When the magnetic metal material layer 2 includes the structure of the stripe pattern 8 shown in FIG. 2, due to the difference in the linear expansion coefficient between the magnetic metal material layer 2 and the thin film layer 1, the internal stress generated in the thin film layer 1 becomes small. The positional deviation of the opening pattern 4 formed by laser processing after lamination can be suppressed. Therefore, there is an effect of widening the selection range of the magnetic metal material. In addition, the stripe pattern 8 can also be In the long axis direction, it is divided into plural unit stripe patterns with shorter lengths. In this way, the internal stress generated in the thin film layer 1 becomes smaller. In FIG. 2, the symbol 9 is a frame-like pattern having an opening encapsulating the plurality of stripe patterns 8 and stacked on the periphery of the thin film layer 1 to form a part of the magnetic metal material layer 2.

該磁性金屬材料層2之該薄膜層1相反側之面2a係設置有框體3。該框體3係固定支撐該磁性金屬材料層2之周緣部,並以例如由銦鋼或鐵-鎳合金等所構成之磁性金屬材料來加以形成,且構成為具有內包該磁性金屬材料層2之複數間隙7的大小之開口10的框狀。另外,框體3並不限於由磁性金屬材料所構成者,亦可為由非磁性金屬材料或硬質樹脂所構成者。本實施形態中,框體3係以磁性金屬材料來加以形成。 The surface 2a of the magnetic metal material layer 2 opposite to the thin film layer 1 is provided with a frame 3. The frame body 3 fixedly supports the peripheral portion of the magnetic metal material layer 2 and is formed of a magnetic metal material composed of, for example, indium steel or iron-nickel alloy, and is configured to have the magnetic metal material layer enclosed The shape of the opening 10 having the size of the plural gap 2 of 2 is a frame shape. In addition, the frame body 3 is not limited to the one made of a magnetic metal material, and may be made of a non-magnetic metal material or hard resin. In this embodiment, the frame body 3 is formed of a magnetic metal material.

接著,便就此般所構成之成膜遮罩之製造方法來加以說明。 Next, the manufacturing method of the film-forming mask thus constructed will be described.

首先,將由例如鎳、鎳合金、銦鋼或銦鋼合金等所構成之厚度為10μm~50μm左右之磁性金屬材料的金屬薄板配合為成膜對象之基板的表面積來裁切,並於該金屬薄板之一面塗布例如聚醯亞胺的樹脂液,將其以200℃~300℃左右的溫度來乾燥,而形成厚度為5μm~30μm左右的可讓可見光穿透之薄膜層1。 First, a metal thin plate composed of, for example, nickel, nickel alloy, indium steel, or indium steel alloy, etc., having a thickness of about 10 μm to 50 μm, and a magnetic metal material is combined with the surface area of the substrate to be film-formed to cut the metal thin plate One side is coated with a resin solution such as polyimide and dried at a temperature of about 200 ° C. to 300 ° C. to form a thin film layer 1 having a thickness of about 5 μm to 30 μm that can transmit visible light.

接著,於金屬薄板之另面將阻劑例如噴塗後,將其乾燥以形成阻劑膜,接著,在使用光罩來曝光阻劑膜後,進行顯影,而對應於複數列之狹縫的形成位置來形成具有細長狀複數開口之阻劑遮罩。 Next, after the resist is sprayed on the other surface of the metal thin plate, for example, it is dried to form a resist film, and then, after the resist film is exposed using a photomask, development is performed, and the formation of slits corresponding to a plurality of rows Position to form a resist mask with elongated plural openings.

接著,在使用該阻劑遮罩來將金屬薄板濕蝕刻,以去除對應於阻劑遮罩開口的部分之金屬薄板,來設置貫穿金屬薄板之狹縫,而形成磁性金屬材料層2後,以例如有機溶劑來溶解去除阻劑遮罩。藉此,便形成層積有薄膜層1與磁性金屬材料層2之遮罩用構件11(參照圖3)。另外,用以蝕刻金屬薄板之蝕刻液係可依照所使用之金屬薄板的材料來適當選擇,並適用習知技術。 Next, after using the resist mask to wet etch the metal sheet to remove the metal sheet corresponding to the opening of the resist mask, a slit penetrating the metal sheet is formed to form the magnetic metal material layer 2, For example, an organic solvent is used to dissolve and remove the resist mask. With this, the mask member 11 (see FIG. 3) in which the thin film layer 1 and the magnetic metal material layer 2 are stacked is formed. In addition, the etching liquid used to etch the metal thin plate can be appropriately selected according to the material of the metal thin plate used, and conventional techniques are applied.

又,在蝕刻金屬薄板而形成狹縫時,亦可同時形成於相對於基板預先設置之基板側對位標記而用以對位之遮罩側對位標記12(參照圖1、2)於複數狹縫形成區域外的預定位置。該情況,在形成阻劑遮罩時,只要於對應於遮罩側對位標記12之位置設置有對位標記用的開口即可。 In addition, when a thin metal plate is etched to form a slit, a mask-side alignment mark 12 (refer to FIGS. 1 and 2) used for alignment may be formed on the substrate-side alignment mark provided in advance with respect to the substrate for alignment. The slit forms a predetermined position outside the area. In this case, when forming the resist mask, it is only necessary to provide an opening for the alignment mark at a position corresponding to the mask-side alignment mark 12.

遮罩用構件11並不限於上述方法,亦可以其他方法來加以形成。例如, 於薄膜之一面藉由例如無電解鍍覆來形成種晶層,而於其上塗布光阻並將其曝光及顯影,對應於複數列之狹縫形成位置來形成複數列條紋狀樹脂圖案後,於該條紋狀樹脂圖案的外側區域鍍覆形成鎳、鎳合金、銦鋼或銦鋼合金等磁性金屬材料。然後,亦可在去除條紋狀樹脂圖案後,藉由蝕刻去除該條紋狀樹脂圖案的形成位置之種晶層,來形成遮罩用構件11。 The mask member 11 is not limited to the above method, and may be formed by other methods. E.g, After forming a seed layer on one side of the film by, for example, electroless plating, a photoresist is coated thereon and exposed and developed, and a plurality of rows of stripe resin patterns are formed corresponding to the positions of the formation of a plurality of slits, A magnetic metal material such as nickel, nickel alloy, indium steel, or indium steel alloy is plated on the outer region of the striped resin pattern. Then, after removing the stripe resin pattern, the seed layer at the formation position of the stripe resin pattern may be removed by etching to form the mask member 11.

藉此,便可形成具備有將圖1(a)所示般之複數狹縫並列設置於其長軸所交叉之方向的磁性金屬材料層2之遮罩用構件11。 Thereby, the mask member 11 provided with the magnetic metal material layer 2 in which the plural slits shown in FIG. 1 (a) are juxtaposed in the direction where the long axis crosses can be formed.

又,如圖2所示般之具備有框狀圖案9及於該框狀圖案9內側設有複數之條紋圖案8的磁性金屬材料層2之遮罩用構件11的形成便可如下般進行。例如,於薄膜之一面藉由例如無電解鍍覆來形成種晶層,而於其上塗布光阻並將其曝光及顯影,以形成包覆欲形成框狀圖案8及複數條紋圖案8之位置外側的種晶層之樹脂圖案後,於欲形成該框狀圖案9及複數條紋圖案8的位置鍍覆形成鎳、鎳合金、銦鋼或銦鋼合金等磁性金屬材料。然後,在去除樹脂圖案後,蝕刻去除該樹脂圖案之形成位置的種晶層。 In addition, as shown in FIG. 2, the formation of the mask member 11 provided with the frame-shaped pattern 9 and the magnetic metal material layer 2 provided with a plurality of stripe patterns 8 inside the frame-shaped pattern 9 can be performed as follows. For example, a seed layer is formed on one surface of the film by, for example, electroless plating, and a photoresist is coated thereon and exposed and developed to form a position where the frame-like pattern 8 and the plurality of stripe patterns 8 are to be formed. After the resin pattern of the seed layer on the outer side, a magnetic metal material such as nickel, nickel alloy, indium steel or indium steel alloy is plated at the position where the frame pattern 9 and the plurality of stripe patterns 8 are to be formed. Then, after removing the resin pattern, the seed layer at the formation position of the resin pattern is etched away.

或者,與前述同樣地,亦可於金屬薄板之一面塗布樹脂液以形成薄膜層1,金屬薄板之另面會藉由塗布阻劑,而將其乾燥後,使用光阻來將阻劑曝光及顯影,以於欲形成該框狀圖案9及複數條紋圖案8的位置外側形成具有開口之阻劑遮罩,而使用該阻劑遮罩來蝕刻該磁性金屬薄板,來形成具備有具有框狀圖案9及複數條紋圖案8之磁性金屬材料2的遮罩用構件11。 Alternatively, in the same way as described above, a resin liquid may be coated on one side of the metal thin plate to form the thin film layer 1. The other side of the metal thin plate may be coated with a resist, and after drying it, a photoresist may be used to expose the resist and Developing, forming a resist mask with an opening outside the position where the frame pattern 9 and the plurality of stripe patterns 8 are to be formed, and using the resist mask to etch the magnetic metal thin plate to form a frame pattern 9 and the masking member 11 of the magnetic metal material 2 of the plural stripe pattern 8.

接著,對向於該遮罩用構件11之磁性金屬材料層2,配置有由磁性金屬材料所構成之框體3,並在將該遮罩用構件11架設於該框體3之狀態下,將雷射光照射至遮罩用構件11周緣部,以將磁性金屬材料層2點焊於框體3之端面。 Next, the magnetic metal material layer 2 opposed to the mask member 11 is provided with a frame body 3 made of a magnetic metal material, and in a state where the mask member 11 is erected on the frame body 3, The laser beam is irradiated to the periphery of the mask member 11 to spot weld the magnetic metal material layer 2 to the end surface of the frame body 3.

接著,轉移至本發明特徵之開口圖案形成工序。以下,便參照圖3、4來就開口圖案形成工序加以說明。 Next, it transfers to the opening pattern formation process which is the characteristic of this invention. Hereinafter, the opening pattern forming process will be described with reference to FIGS. 3 and 4.

首先,如圖3(a)所示,於薄膜層1之磁性金屬材料層2相反側之面(以下稱為「一面1a」)使用例如KrF248nm之準分子雷射,或YAG雷射之第3高頻或第4高頻,來照射波長為400nm以下的雷射光L,而去除薄膜層1,以設置同圖(c)所示之固定深度的第1凹部5。 First, as shown in FIG. 3 (a), on the surface opposite to the magnetic metal material layer 2 of the thin film layer 1 (hereinafter referred to as "one surface 1a"), an excimer laser such as KrF248nm, or the third of YAG laser is used. The high frequency or the fourth high frequency irradiates the laser light L with a wavelength of 400 nm or less, and the thin film layer 1 is removed to provide the first concave portion 5 of a fixed depth as shown in FIG. (C).

詳而言之,以例如預先形成之遮罩側對位標記12為基準而將雷射光在平行於遮罩用構件11之面的面內於二維方向移動預定之距離,並在薄膜層1之一面1a,將雷射光照射至對應於磁性金屬材料層2之間隙7的部分,以形成第1凹部5。 In detail, the laser light is moved in a two-dimensional direction by a predetermined distance in a plane parallel to the surface of the mask member 11 based on, for example, the mask-side registration mark 12 formed in advance, and is placed on the thin film layer 1 One surface 1a irradiates the laser light to the portion corresponding to the gap 7 of the magnetic metal material layer 2 to form the first concave portion 5.

或者,亦可在對應於欲形成開口圖案4之位置設有為雷射光L照射目標的基準圖案之基準基板上定位載置遮罩用構件11,並透過薄膜層1以二維照相機來觀察該基準圖案,以檢出該基準圖案之位置座標後,將雷射光L的照射目標設定為該基準圖案之該位置座標,並將雷射光L照射至薄膜層1之一面1a,以形成第1凹部5。 Alternatively, the mask member 11 may be positioned on the reference substrate corresponding to the reference pattern for the laser light L irradiation target corresponding to the position where the opening pattern 4 is to be formed, and the thin film layer 1 may be used to observe the two-dimensional camera. The reference pattern, after detecting the position coordinate of the reference pattern, sets the irradiation target of the laser light L as the position coordinate of the reference pattern, and irradiates the laser light L to the surface 1a of the thin film layer 1 to form the first concave portion 5.

不論上述何種情況,只要使用利用於第1凹部5設有相似形狀之複數開口部的遮罩之投影型雷射加工裝置,來將該複數開口部縮小投影至薄膜層1之一面1a,而匯聚形成複數第1凹部5即可。另外,另外,圖3係顯示匯聚例如於圖1(a)以虛線包圍表示之第1凹部5而加以形成的情況。 In any case, as long as a projection-type laser processing apparatus using a mask having a plurality of openings in a similar shape in the first recess 5 is used, the plurality of openings are reduced and projected onto the surface 1a of the thin film layer 1, and The plurality of first recesses 5 may be formed by converging. In addition, FIG. 3 shows a case where the first recess 5 shown in FIG. 1 (a) is enclosed by a broken line and formed.

之後,如圖3(a)所示,將雷射光L在薄膜層1之一面1a上以箭頭來表示之二維方向步進移動預定之距離,並且去除薄膜層1之一面1a,而如同圖(b)所示般,於薄膜層1之一面1a將複數第1凹部5配置形成為縱橫矩陣狀。 After that, as shown in FIG. 3 (a), the laser light L is stepwise moved in a two-dimensional direction indicated by an arrow on one surface 1a of the thin film layer 1 by a predetermined distance, and one surface 1a of the thin film layer 1 is removed, as shown in the figure. As shown in (b), a plurality of first concave portions 5 are arranged in a vertical and horizontal matrix on one surface 1a of the thin film layer 1.

接著,讓遮罩用構件11上下反轉,如圖4(a)所示,從磁性金屬材料層2側將雷射光照射至薄膜層1之磁性金屬材料側2側之面(以下稱為「另面1b」),以於對應於磁性金屬材料層2之間隙7的薄膜層1之部分形成到達該第1凹部5之第2凹部6。藉此,如同圖(c)所示,第1凹部5與第2凹部6會連接,而形成貫穿薄膜層1之開口圖案4。較佳地,最好是第2凹部6之開口面積會較第1凹部5之開口面積要廣。 Next, the mask member 11 is turned upside down, and as shown in FIG. 4 (a), the laser light is irradiated from the magnetic metal material layer 2 side to the surface of the thin film layer 1 on the magnetic metal material side 2 side (hereinafter referred to as " On the other side 1b "), the second concave portion 6 reaching the first concave portion 5 is formed in the portion of the thin film layer 1 corresponding to the gap 7 of the magnetic metal material layer 2. Thereby, as shown in FIG. (C), the first concave portion 5 and the second concave portion 6 are connected to form an opening pattern 4 penetrating the thin film layer 1. Preferably, it is preferable that the opening area of the second recess 6 is wider than the opening area of the first recess 5.

該情況,與上述同樣地,只要使用利用於第2凹部6設有相似形狀之複數開口部的遮罩之投影型雷射加工裝置,來將該複數開口部縮小投影至薄膜層1之另面1b,而匯聚形成複數第2凹部6即可。 In this case, as described above, as long as a projection-type laser processing apparatus using a mask provided with a plurality of openings of a similar shape in the second recess 6 is used, the plurality of openings are reduced and projected onto the other surface of the thin film layer 1 1b, it suffices to form a plurality of second recesses 6 together.

或者,亦可使用照射面積相當於內包複數第1凹部5之區域面積的雷射光L,來形成第2凹部6。該情況,磁性金屬材料層2會具有遮罩之機能,而對應於磁性金屬材料層2之間隙7的薄膜層1部分會被去除,以形成第2凹部6。 Alternatively, the second concave portion 6 may be formed using laser light L having an irradiation area equivalent to the area of the area in which the first concave portions 5 are included. In this case, the magnetic metal material layer 2 will function as a mask, and the portion of the thin film layer 1 corresponding to the gap 7 of the magnetic metal material layer 2 will be removed to form the second recess 6.

之後,如圖4(a)所示,將雷射光在薄膜層1之另面1b上以箭頭來表示之二維方向步進移動預定之距離,並且去除薄膜層1之另面1b,而如同圖(b)所示般,於薄膜層1之另面1b形成複數第2凹部6。藉此,便會形成圖1或圖2所示之成膜遮罩。 After that, as shown in FIG. 4 (a), the laser light is stepwise moved in a two-dimensional direction indicated by an arrow on the other surface 1b of the thin film layer 1, and the other surface 1b of the thin film layer 1 is removed, as As shown in FIG. (B), a plurality of second concave portions 6 are formed on the other surface 1b of the thin film layer 1. With this, the film-forming mask shown in FIG. 1 or FIG. 2 is formed.

如此一來,根據本發明,由於從薄膜層1之兩面側照射雷射光L,以形成開口圖案4,故可抑制於薄膜層1之一面(與基板密合面)1a側的開口圖案4緣部產生毛邊。從而,便可防止開口圖案4之毛邊成為成膜之陰影,並且防止因毛邊之存在而在薄膜層1與基板之間產生間隙。藉此,便可提升包含形狀及位置精度之薄膜圖案的形成精度。 In this way, according to the present invention, since the laser light L is irradiated from both sides of the thin film layer 1 to form the opening pattern 4, the edge of the opening pattern 4 on the side of the thin film layer 1 (adhering surface to the substrate) 1a side can be suppressed There are burrs in the area. Therefore, it is possible to prevent the burrs of the opening pattern 4 from becoming a shadow of film formation, and to prevent a gap between the thin film layer 1 and the substrate due to the presence of the burrs. Thereby, the formation accuracy of the thin film pattern including shape and position accuracy can be improved.

該情況,在形成第1凹部5後,若形成面積較該第1凹部5之開口面積要大的第2凹部6的話,更可抑制該毛邊之產生。又,由於第2凹部6之開口面積會較第1凹部5要大,故可省略第2凹部6之加工定位精度。 In this case, after the first recess 5 is formed, if the second recess 6 having a larger area than the opening area of the first recess 5 is formed, the occurrence of the burr can be further suppressed. In addition, since the opening area of the second concave portion 6 is larger than that of the first concave portion 5, the processing positioning accuracy of the second concave portion 6 can be omitted.

接著,便就該開口圖案4之形成來說明其他形成範例。 Next, other forming examples will be described regarding the formation of the opening pattern 4.

圖5係以本發明成膜遮罩之製造方法來說明開口圖案變形例之圖式,係顯示貫穿孔之形成工序之剖面圖,(a)係顯示開始雷射加工,(b)係顯示結束雷射加工,(c)係貫穿孔之放大剖面圖。圖6係以本發明成膜遮罩之製造方法來說明開口圖案變形例之圖式,係顯示凹部之形成工序之剖面圖,(a)係顯示開始雷射加工,(b)係顯示結束雷射加工,(c)係凹部之放大剖面圖。 FIG. 5 is a diagram illustrating a modification of the opening pattern by the method for manufacturing a film-forming mask of the present invention, a cross-sectional view showing the forming process of a through hole, (a) shows the start of laser processing, (b) shows the end Laser processing, (c) is an enlarged cross-sectional view of the through hole. 6 is a diagram illustrating a modified example of an opening pattern by the method for manufacturing a film-forming mask of the present invention, a cross-sectional view showing the forming process of a concave portion, (a) shows the start of laser processing, (b) shows the end of laser Shot processing, (c) is an enlarged cross-sectional view of the recess.

首先,如圖5(a)所示,將雷射光L照射至薄膜層1之一面1a,而去除薄膜層1,以如同圖(c)所示般,設置貫穿薄膜層1之貫穿孔13。 First, as shown in FIG. 5 (a), the laser light L is irradiated to one surface 1a of the thin film layer 1, and the thin film layer 1 is removed, as shown in FIG. (C), a through hole 13 penetrating through the thin film layer 1 is provided.

詳而言之,與上述同樣地,例如以預先形成之遮罩側對位標記12為基準而將雷射光在平行於遮罩用構件11之面的面內於二維方向移動預定之距離,並在薄膜層1之一面1a,將雷射光照射至對應於磁性金屬材料層2之間隙7的部分,以形成與薄膜圖案同形狀之貫穿孔13。 Specifically, in the same manner as above, for example, the laser light is moved in a two-dimensional direction by a predetermined distance in a plane parallel to the surface of the mask member 11 using the mask-side registration mark 12 formed as a reference, And on one surface 1a of the thin film layer 1, the laser light is irradiated to the portion corresponding to the gap 7 of the magnetic metal material layer 2 to form a through hole 13 having the same shape as the thin film pattern.

或者,亦可在對應於欲形成開口圖案4之位置設有為雷射光L照射目標的基準圖案之基準基板上定位載置遮罩用構件11,並透過薄膜層1以二維照相機來觀察該基準圖案,以檢出該基準圖案之位置座標後,將雷射光L的照射目標設定為該基準圖案之該位置座標,並將雷射光L照射至薄膜層1之一面1a,以形成貫穿孔13。 Alternatively, the mask member 11 may be positioned on the reference substrate corresponding to the reference pattern for the laser light L irradiation target corresponding to the position where the opening pattern 4 is to be formed, and the thin film layer 1 may be used to observe the two-dimensional camera. The reference pattern, after detecting the position coordinate of the reference pattern, sets the irradiation target of the laser light L as the position coordinate of the reference pattern, and irradiates the laser light L to the surface 1a of the thin film layer 1 to form the through hole 13 .

之後,如圖5(a)所示般,將雷射光L在薄膜層1之一面1a上以箭頭來 表示之二維方向步進移動預定之距離,並且去除薄膜層1之一面1a,而如同圖(b)所示般,於薄膜層1之一面1a將複數貫穿孔13配置形成為縱橫矩陣狀。 Then, as shown in FIG. 5 (a), the laser light L is drawn on one surface 1a of the thin film layer 1 with arrows The indicated two-dimensional direction moves stepwise by a predetermined distance and removes the surface 1a of the thin film layer 1, and as shown in FIG. (B), the plurality of through holes 13 are arranged in a vertical and horizontal matrix on the surface 1a of the thin film layer 1.

接著,讓遮罩用構件11上下反轉,如圖6(a)所示般,從磁性金屬材料層2側將雷射光L照射至薄膜層1之另面1b,以於對應於磁性金屬材料層2之間隙7的薄膜層1之部分形成具有於薄膜層1之一面1a側殘留有例如1μm~4μm左右之薄層並較該貫穿孔13之開口面積要廣的開口部之凹部14。藉此,同圖(c)所示,薄膜層1便形成有以貫穿孔13與凹部14所構成之開口圖案4。 Next, the mask member 11 is turned upside down, and as shown in FIG. 6 (a), the laser light L is irradiated from the side of the magnetic metal material layer 2 to the other surface 1b of the thin film layer 1 to correspond to the magnetic metal material The portion of the thin film layer 1 of the gap 7 of the layer 2 has a recess 14 having an opening portion having a thin layer of about 1 μm to 4 μm remaining on one side 1 a side of the thin film layer 1 and having a wider opening area than the through hole 13. As a result, as shown in FIG. (C), the thin film layer 1 is formed with the opening pattern 4 composed of the through hole 13 and the concave portion 14.

之後,如圖6(a)所示,將雷射光在薄膜層1之另面1b上以箭頭來表示之二維方向步進移動預定之距離,並且去除薄膜層1之另面1b,而如同圖(b)所示般,於薄膜層1之另面1b形成複數凹部14。藉此,便會形成圖1或圖2所示之成膜遮罩。 After that, as shown in FIG. 6 (a), the laser light is stepwise moved in a two-dimensional direction indicated by an arrow on the other surface 1b of the thin film layer 1, and the other surface 1b of the thin film layer 1 is removed as As shown in FIG. (B), a plurality of concave portions 14 are formed on the other surface 1b of the thin film layer 1. With this, the film-forming mask shown in FIG. 1 or FIG. 2 is formed.

由於該情況亦從薄膜層1之兩面側照射雷射光L,以形成開口圖案4。故可抑制於薄膜層1之一面(與基板密合面)1a側的開口圖案4緣部產生毛邊。 In this case, the laser light L is irradiated from both sides of the thin film layer 1 to form the opening pattern 4. Therefore, it is possible to suppress the occurrence of burrs on the edge of the opening pattern 4 on the side of one surface (adhering surface to the substrate) 1a side of the thin film layer 1.

從而,本發明之成膜遮罩可提升與基板之密合性,且適於包含有例如有機EL顯示用基板發光層之有機EL層的蒸鍍形成。 Therefore, the film-forming mask of the present invention can improve the adhesion to the substrate and is suitable for vapor deposition of an organic EL layer including, for example, a light-emitting layer of an organic EL display substrate.

上述說明中,雖已就成膜遮罩具備有框體3之情況來加以說明,但本發明並不限於此,亦可無須框體3。 In the above description, the case where the film forming mask is provided with the frame body 3 has been described, but the present invention is not limited to this, and the frame body 3 may not be required.

Claims (20)

一種成膜遮罩之製造方法,係層積了設有預定之既定形狀的開口圖案之樹脂製薄膜層,以及設有可內藏該開口圖案之大小的間隙之磁性金屬材料層的構造之成膜遮罩之製造方法,其中該開口圖案係在從該磁性金屬材料層之相反側將雷射光照射至對應於該間隙之薄膜層一部分後,從該磁性金屬材料層側照射雷射光,以貫穿該薄膜層而加以形成。A method for manufacturing a film-forming mask, which is formed by laminating a resin film layer provided with an opening pattern of a predetermined predetermined shape, and a magnetic metal material layer provided with a gap of a size capable of containing the opening pattern Method for manufacturing a film mask, wherein the opening pattern is irradiated with laser light from a side of the magnetic metal material layer to a part of the thin film layer corresponding to the gap, and then irradiated with laser light from the magnetic metal material layer side to penetrate This thin film layer is formed. 如申請專利範圍第1項之成膜遮罩之製造方法,其中該開口圖案係該磁性金屬材料層側之開口面積會較該磁性金屬材料層之相反側開口面積要廣。For example, in the method for manufacturing a film-forming mask of claim 1, the opening pattern is that the opening area on the magnetic metal material layer side is wider than the opening area on the opposite side of the magnetic metal material layer. 如申請專利範圍第1或2項之成膜遮罩之製造方法,其中該開口圖案係在將雷射光照射至該薄膜層之該磁性金屬材料層相反側的面,以設置固定深度之第1凹部後,將雷射光照射至該薄膜層之該磁性金屬材料層側的面,以設置到達該第1凹部之深度的第2凹部而加以形成。For example, the method for manufacturing a film-forming mask according to item 1 or 2 of the patent application, in which the opening pattern is on the surface on the opposite side of the magnetic metal material layer of the thin film layer to set the first After the recessed portion, the surface of the thin film layer on the magnetic metal material layer side is irradiated with laser light to form a second recessed portion that reaches a depth of the first recessed portion. 如申請專利範圍第1或2項之成膜遮罩之製造方法,其中該開口圖案係在將雷射光照射至該薄膜層之該磁性金屬材料層相反側的面,以設置貫穿該薄膜層之貫穿孔後,將雷射光照射至該薄膜層之該磁性金屬材料層側的面,以設置固定深度之凹部而加以形成。For example, the method for manufacturing a film-forming mask according to item 1 or 2 of the patent application, wherein the opening pattern is provided on the surface opposite to the magnetic metal material layer of the thin film layer to irradiate the laser light to set After the through hole, the laser light is irradiated to the surface of the thin film layer on the side of the magnetic metal material layer to form a concave portion with a fixed depth. 如申請專利範圍第1或2項之成膜遮罩之製造方法,其中該間隙係貫穿該磁性金屬材料層而加以設置之狹縫。For example, in the method for manufacturing a film-forming mask of claim 1 or 2, the gap is a slit provided through the magnetic metal material layer. 如申請專利範圍第3項之成膜遮罩之製造方法,其中該間隙係貫穿該磁性金屬材料層而加以設置之狹縫。For example, in the method for manufacturing a film-forming mask of claim 3, the gap is a slit provided through the magnetic metal material layer. 如申請專利範圍第4項之成膜遮罩之製造方法,其中該間隙係貫穿該磁性金屬材料層而加以設置之狹縫。For example, in the method for manufacturing a film-forming mask of claim 4, the gap is a slit provided through the magnetic metal material layer. 如申請專利範圍第1或2項之成膜遮罩之製造方法,其中該間隙係在構成該磁性金屬材料層之一部分的細長狀複數條紋圖案中,為鄰接之該條紋圖案之間的部分。For example, in the method for manufacturing a film-forming mask according to item 1 or 2 of the patent application range, the gap is a portion between adjacent stripe patterns in the elongated plural stripe pattern constituting a part of the magnetic metal material layer. 如申請專利範圍第3項之成膜遮罩之製造方法,其中該間隙係在構成該磁性金屬材料層之一部分的細長狀複數條紋圖案中,為鄰接之該條紋圖案之間的部分。For example, in the method of manufacturing a film-forming mask according to item 3 of the patent application range, the gap is a portion between adjacent stripe patterns in the elongated plural stripe pattern that constitutes a part of the magnetic metal material layer. 如申請專利範圍第4項之成膜遮罩之製造方法,其中該間隙係在構成該磁性金屬材料層之一部分的細長狀複數條紋圖案中,為鄰接之該條紋圖案之間的部分。For example, in the method for manufacturing a film-forming mask according to item 4 of the patent application range, the gap is a portion between adjacent stripe patterns in the elongated plural stripe pattern constituting a part of the magnetic metal material layer. 一種成膜遮罩,係層積了設有預定之既定形狀的開口圖案之樹脂製薄膜層,以及設有可內藏該開口圖案之大小的間隙之磁性金屬材料層的構造之成膜遮罩,其中,該開口圖案係在從該磁性金屬材料層之相反側將雷射光照射至對應於該間隙之薄膜層一部分後,從該磁性金屬材料層側照射雷射光,以貫穿該薄膜層而加以形成。A film-forming mask formed by laminating a resin film layer provided with an opening pattern of a predetermined shape and a magnetic metal material layer having a gap of the size of the opening pattern , Wherein the opening pattern is irradiated with laser light from the opposite side of the magnetic metal material layer to a portion of the thin film layer corresponding to the gap, and then irradiated with laser light from the magnetic metal material layer side to penetrate the thin film layer form. 如申請專利範圍第11項之成膜遮罩,其中該開口圖案係該磁性金屬材料層之開口面積會較該磁性金屬材料層之相反側開口面積要廣。For example, in the film-forming mask of claim 11, the opening pattern is that the opening area of the magnetic metal material layer is wider than the opening area of the opposite side of the magnetic metal material layer. 如申請專利範圍第11或12項之成膜遮罩,其中該開口圖案係由該薄膜層之該磁性金屬材料層相反側之面所形成的固定深度之第1凹部,以及於該薄膜層之該磁性金屬材料層側之面以到達該第1凹部的深度來加以形成之第2凹部所構成。As in the film-forming mask of claim 11 or 12, the opening pattern is the first concave portion of a fixed depth formed by the surface of the thin film layer opposite to the magnetic metal material layer, and the thin film layer The surface on the magnetic metal material layer side is constituted by a second concave portion formed to reach a depth of the first concave portion. 如申請專利範圍第11或12項之成膜遮罩,其中該開口圖案係由將雷射光照射至該薄膜層之該磁性金屬材料層相反側之面,以貫穿該薄膜層來加以形成之貫穿孔,以及將雷射光照射至該薄膜層之該磁性金屬材料層側之面來加以形成的固定深度之凹部所構成。As in the film-forming mask of claim 11 or 12, wherein the opening pattern is formed by irradiating laser light to the surface of the thin-film layer opposite to the magnetic metal material layer to penetrate through the thin-film layer The hole and a concave portion of a fixed depth formed by irradiating the laser light to the surface of the thin film layer on the magnetic metal material layer side. 如申請專利範圍第11或12項之成膜遮罩,其中該間隙係貫穿該磁性金屬材料層而加以設置之狹縫。As in the film-forming mask of claim 11 or 12, the gap is a slit provided through the magnetic metal material layer. 如申請專利範圍第13項之成膜遮罩,其中該間隙係貫穿該磁性金屬材料層而加以設置之狹縫。As in the film-forming mask of claim 13, the gap is a slit provided through the magnetic metal material layer. 如申請專利範圍第14項之成膜遮罩,其中該間隙係貫穿該磁性金屬材料層而加以設置之狹縫。As in the film-forming mask of claim 14, the gap is a slit provided through the magnetic metal material layer. 如申請專利範圍第11或12項之成膜遮罩,其中該間隙係在構成該磁性金屬材料層之一部分的細長狀複數條紋圖案中,為鄰接之該條紋圖案之間的部分。As in the film-forming mask of claim 11 or 12, the gap is in the elongated plural stripe pattern constituting a part of the magnetic metal material layer, which is the part between the adjacent stripe patterns. 如申請專利範圍第13項之成膜遮罩,其中該間隙係在構成該磁性金屬材料層之一部分的細長狀複數條紋圖案中,為鄰接之該條紋圖案之間的部分。As in the film-forming mask of claim 13 of the patent application range, the gap is a portion between the stripe patterns adjacent to each other in the elongated stripe pattern constituting a part of the magnetic metal material layer. 如申請專利範圍第14項之成膜遮罩,其中該間隙係在構成該磁性金屬材料層之一部分的細長狀複數條紋圖案中,為鄰接之該條紋圖案之間的部分。As in the film-forming mask of claim 14 of the patent application range, the gap is a part between the stripe patterns adjacent to each other in the elongated stripe pattern constituting a part of the magnetic metal material layer.
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