WO2017071401A1 - Diode électroluminescente - Google Patents

Diode électroluminescente Download PDF

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Publication number
WO2017071401A1
WO2017071401A1 PCT/CN2016/097801 CN2016097801W WO2017071401A1 WO 2017071401 A1 WO2017071401 A1 WO 2017071401A1 CN 2016097801 W CN2016097801 W CN 2016097801W WO 2017071401 A1 WO2017071401 A1 WO 2017071401A1
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WO
WIPO (PCT)
Prior art keywords
layer
emitting diode
light emitting
double
diode according
Prior art date
Application number
PCT/CN2016/097801
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English (en)
Chinese (zh)
Inventor
蔡正文
蒙成
王晶
王笃祥
吴超瑜
Original Assignee
天津三安光电有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 天津三安光电有限公司 filed Critical 天津三安光电有限公司
Publication of WO2017071401A1 publication Critical patent/WO2017071401A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Definitions

  • the present invention relates to the field of semiconductor illumination, and more particularly to a light emitting diode.
  • the active layers of the current LED structures are mostly quantum well structures, which have better carrier-limited capabilities than the earlier double-heterostructures, and thus have better luminous efficiency.
  • quantum well structures which have better carrier-limited capabilities than the earlier double-heterostructures, and thus have better luminous efficiency.
  • the amount of heat generated is very high (that is, at a high junction temperature), which causes a serious carrier overflow phenomenon, and the band system changes accordingly.
  • LEDs using a quantum well structure as an active layer undergo luminance degradation, voltage drop, and wavelength drift at high temperatures.
  • the present invention proposes a novel light emitting diode structure, wherein the active layer contains a double heterostructure and a quantum well junction, and under high current operation (current density is greater than or equal to 3 A/mm 2 ), the brightness will be It is 15 ⁇ 20% higher than the pure quantum well structure.
  • an AlInGaP-based light emitting diode comprising: an n-type confinement layer, a p-type confinement layer, and an active layer sandwiched therebetween.
  • the active layer contains a quantum well structure and a heterogeneous double heterostructure, wherein the double heterostructure is adjacent to the n-type confinement layer, and the quantum well structure is adjacent to the p-type confinement layer.
  • the active layer has an emission wavelength of 560 to 660 nm.
  • the active layer includes m double heterostructures composed of a barrier layer and a well layer, where l ⁇ m ⁇ 10
  • the barrier layer of the double heterostructure is Al x G ai — x InP
  • the well layer is Al y Ga y InP, wherein the range of ⁇ is 0.1 ⁇ 0.17, and the range of y is 0.65 ⁇ 0.75.
  • the double heterostructure has a barrier layer thickness of 200 to 220 angstroms, and the double heterostructure has a well layer thickness of 180 to 200 angstroms.
  • the barrier layer of the double heterostructure has a p-type impurity, and the impurity concentration is 1E17 ⁇ 2E17.
  • the barrier layer of the double heterostructure has n-type impurity, and the impurity concentration is 1E17 ⁇ 2E17.
  • the active layer has a plurality of double heterostructures, wherein a portion of the barrier layer adjacent to the n-type confinement layer is cumbersome, and the miscellaneous logarithm is less than or equal to the total pair of the double heterostructures 1/3 of the number.
  • the double heterostructure has a plurality of counter layers and a well layer, and the intermediate portion of the at least part of the barrier layers is cumbersome, and the thickness is 1/2 to 1/3 of the thickness of the barrier layer. .
  • the quantum well structure has a barrier layer thickness of 50 to 70 angstroms, and the quantum well structure has a well layer thickness of 40 to 60 angstroms.
  • the barrier layer of the quantum well structure is Al z G ai — z InP, and the well layer is GalnP, wherein z ranges from 0.65 to 0.75.
  • a double heterostructure is added to the active layer, which has a wide well and a barrier, which can alleviate the high temperature ⁇ carrier overflow condition, thereby reducing brightness attenuation; and in the double heterostructure
  • the hard layer of the barrier layer the high temperature ⁇ will release the carrier will also have a compensation effect, relatively will also enhance the brightness under high temperature conditions.
  • the PL-height of the double-heterostructure is wider than that of the quantum well structure, while the higher half-wave width means that the coloration purity is poor, so some quantum wells are retained to improve the problem.
  • FIG. 1 is a side cross-sectional view of a light emitting diode in accordance with an embodiment of the present invention.
  • FIG. 2 to FIG. 5 are four schematic diagrams showing the double heterostructure of the active layer of the LED shown in FIG. 1.
  • 100 n-type confinement layer; 200: active layer; 210: double heterostructure; 211: double heterostructure barrier layer; 212: double heterostructure well layer 220: quantum well structure; a barrier layer of a quantum well; 222: a well layer of a quantum well.
  • a light emitting diode includes at least: an n-type confinement layer 100, an active layer 200, and a p-type confinement layer 300, wherein the n-type confinement layer 100 and the p-type confinement layer 300 is made of aluminum indium phosphorus (A1 InP) material, and the active layer 200 is located between the two, and is composed of one or more double heterostructures 210 and multiple quantum well structures 220, and the visible light has a wavelength of 560-660 nm. Band.
  • A1 InP aluminum indium phosphorus
  • the double heterostructure 210 may take 1 to 10, adjacent to the n-type confinement layer 100, and is composed of an Al x Ga ⁇ x InP barrier layer 211 and an Al y G ai - y InP well layer 212 (x)
  • the range is 0.1 to 0.17, and the range of y is 0.65 to 0.75), wherein the Al x G ai — x InP barrier layer 211 has a p-type (such as Mg, Zn, etc.) or an n-type impurity (such as Si, Te, etc.).
  • the complex concentration is 1E17 ⁇ 2E17, and the specific miscellaneous manner will be described in detail below with reference to FIGS. 2 ⁇ 5.
  • the total number of double heterostructures 210 is 6, Al x G ai — x
  • the thickness of the InP barrier layer 211 is 200 to 220 angstroms, and the thickness of the Al y Ga y InP well layer 212 is 180 to 200 angstroms.
  • the multiple quantum well structure 220 is adjacent to the p-type confinement layer 300, and is composed of an Al z Ga z InP barrier layer 221 and a GalnP well layer 222 (z ranges from 0.65 to 0.75), wherein the Al z Ga i— z InP barrier layer
  • the thickness of 221 is 50 to 70 angstroms
  • the thickness of the GalnP well layer 222 is 40 to 60 angstroms.
  • neither the barrier layer nor the well layer of the quantum well is intentionally miscellaneous.
  • the active layer of the above light emitting diode structure is composed of a combination of a double heterostructure and a multiple quantum well structure, wherein the well and the barrier of the double heterostructure It is wider than the quantum well, which can reduce the high temperature ⁇ carrier overflow condition, thus reducing the brightness attenuation; and in the double heterogeneous structure of the barrier layer, the high temperature ⁇ will release the carrier will also have a compensation effect, relatively also Will increase the brightness at high temperatures.
  • the PL of the double heterostructure is essentially wider than the quantum well structure, and the higher half width represents the width.
  • the coloring purity is poor, so the active layer of the above light-emitting diode retains part of the quantum well to improve the problem.
  • the specific and cumbersome manner of the double heterostructure of the active layer will be described in detail below with reference to FIGS. 2-5.
  • the active layer has six double heterostructures, and the barrier layers of all the double heterostructures are uniformly and cumbersome.
  • the active layer has 4 to 6 double heterostructures, and only the barrier layer of the partial double heterostructure of the active layer is subjected to cumbersome processing, specifically
  • the barrier layer of the double heterostructure close to the n-type confinement layer is uniformly miscellaneous, and its miscellaneous logarithm is less than or equal to 1/3 of the total logarithm of the double heterostructure.
  • the barrier layer of all double heterostructures of the active layer is cumbersome, but the barrier layers are not all complicated, only in the middle region, and the thickness is complicated. Between 1/2 and 1/3 of the thickness of the barrier layer, this kind of miscellaneous method can effectively prevent the diffuse elements from diffusing into the well of the double heterostructure, preventing the formation of defect centers and reducing the luminous efficiency.
  • the hetero structure is more stable.
  • a partial heterogeneous treatment is performed on a partial double heterostructure structure of the active layer, specifically a double heterostructure close to the n-type confinement layer.
  • the middle area of the barrier layer is cumbersome, and has at least four double heterostructures, the miscellaneous logarithm of which is less than or equal to 1/3 of the total logarithm of the double heterostructure, and the miscellaneous thickness is between the thickness of the barrier layer. /2 ⁇ 1/3, this kind of miscellaneous way can prevent the diffuse elements from spreading into the wells of double heterostructures more effectively, preventing the formation of defect centers and reducing the luminous efficiency, which will be more stable than the uniform structure.
  • the regular meeting is more stable than the embodiment of Figure 4.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne une diode électroluminescente, comprenant : une couche restreinte de type n (100), une couche restreinte de type p (300), et une couche active (200) intercalée entre elles, caractérisées : en ce que ladite couche active (200) contient une structure de puits quantique (220) et une hétérostructure double (210); en ce que l'hétérostructure double (210) est adjacente à la couche restreinte de type n (100), et en ce que la structure de puits quantique (220) est adjacente à la couche restreinte de type p (300), afin de réduire la circulation excessive de porteurs de charges dans des conditions de fort courant et d'améliorer la pureté de couleur de l'émission de lumière.
PCT/CN2016/097801 2015-10-29 2016-09-01 Diode électroluminescente WO2017071401A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510714528.XA CN105206721B (zh) 2015-10-29 2015-10-29 发光二极管
CN201510714528.X 2015-10-29

Publications (1)

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WO2017071401A1 true WO2017071401A1 (fr) 2017-05-04

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CN (1) CN105206721B (fr)
WO (1) WO2017071401A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105206721B (zh) * 2015-10-29 2018-01-19 天津三安光电有限公司 发光二极管
CN109952659B (zh) * 2016-07-28 2022-03-11 亮锐有限责任公司 具有超晶格的ⅲ-p发光器件

Citations (6)

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JPH0888404A (ja) * 1994-09-17 1996-04-02 Toshiba Corp 面発光型半導体発光装置
CN101308899A (zh) * 2007-05-15 2008-11-19 日立电线株式会社 半导体发光元件
JP2010153496A (ja) * 2008-12-24 2010-07-08 Shin Etsu Handotai Co Ltd 発光素子
CN102460739A (zh) * 2009-06-05 2012-05-16 加利福尼亚大学董事会 长波长非极性及半极性(Al,Ga,In)N基激光二极管
CN103283041A (zh) * 2010-12-28 2013-09-04 信越半导体股份有限公司 发光元件
CN105206721A (zh) * 2015-10-29 2015-12-30 天津三安光电有限公司 发光二极管

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CN201060869Y (zh) * 2006-12-29 2008-05-14 北京工业大学 一种具有电流输运增透窗口层结构的发光二极管
CN101009353B (zh) * 2007-01-26 2010-07-21 北京太时芯光科技有限公司 具有电流输运增透窗口层和高反射图形转移衬底结构的发光二极管
CN101777607B (zh) * 2009-01-09 2012-05-23 晶元光电股份有限公司 发光半导体装置
CN101740691A (zh) * 2009-12-22 2010-06-16 苏州纳晶光电有限公司 一种新型结构的大功率氮化镓基led
JP5143171B2 (ja) * 2010-03-17 2013-02-13 株式会社東芝 半導体発光素子及びその製造方法
JP5996846B2 (ja) * 2011-06-30 2016-09-21 シャープ株式会社 窒化物半導体発光素子およびその製造方法
CN102903807B (zh) * 2012-10-10 2015-09-30 华灿光电股份有限公司 一种发光二极管的外延片以及发光二极管

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888404A (ja) * 1994-09-17 1996-04-02 Toshiba Corp 面発光型半導体発光装置
CN101308899A (zh) * 2007-05-15 2008-11-19 日立电线株式会社 半导体发光元件
JP2010153496A (ja) * 2008-12-24 2010-07-08 Shin Etsu Handotai Co Ltd 発光素子
CN102460739A (zh) * 2009-06-05 2012-05-16 加利福尼亚大学董事会 长波长非极性及半极性(Al,Ga,In)N基激光二极管
CN103283041A (zh) * 2010-12-28 2013-09-04 信越半导体股份有限公司 发光元件
CN105206721A (zh) * 2015-10-29 2015-12-30 天津三安光电有限公司 发光二极管

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CN105206721B (zh) 2018-01-19
CN105206721A (zh) 2015-12-30

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