WO2017069255A1 - エピタキシャル成長用基板及びその製造方法 - Google Patents
エピタキシャル成長用基板及びその製造方法 Download PDFInfo
- Publication number
- WO2017069255A1 WO2017069255A1 PCT/JP2016/081314 JP2016081314W WO2017069255A1 WO 2017069255 A1 WO2017069255 A1 WO 2017069255A1 JP 2016081314 W JP2016081314 W JP 2016081314W WO 2017069255 A1 WO2017069255 A1 WO 2017069255A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper layer
- substrate
- epitaxial growth
- rolling
- layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000010949 copper Substances 0.000 claims abstract description 193
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 170
- 229910052802 copper Inorganic materials 0.000 claims abstract description 161
- 239000013078 crystal Substances 0.000 claims abstract description 69
- 238000005096 rolling process Methods 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 238000005498 polishing Methods 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000003475 lamination Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000005259 measurement Methods 0.000 claims abstract description 10
- 238000010030 laminating Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 179
- 238000010438 heat treatment Methods 0.000 claims description 48
- 239000011241 protective layer Substances 0.000 claims description 40
- 230000003746 surface roughness Effects 0.000 claims description 31
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 29
- 230000009467 reduction Effects 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 230000002159 abnormal effect Effects 0.000 abstract description 34
- 238000007747 plating Methods 0.000 description 29
- 230000008569 process Effects 0.000 description 20
- 238000000992 sputter etching Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 239000011889 copper foil Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- 239000002648 laminated material Substances 0.000 description 9
- 238000001953 recrystallisation Methods 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- 238000001994 activation Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000000879 optical micrograph Methods 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002791 soaking Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 230000005291 magnetic effect Effects 0.000 description 4
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000002156 adsorbate Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002889 diamagnetic material Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002907 paramagnetic material Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/013—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium
- B32B15/015—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of an iron alloy or steel, another layer being formed of a metal other than iron or aluminium the said other metal being copper or nickel or an alloy thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/18—Layered products comprising a layer of metal comprising iron or steel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/0076—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised in that the layers are not bonded on the totality of their surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0036—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/0012—Mechanical treatment, e.g. roughening, deforming, stretching
- B32B2038/0016—Abrading
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B2038/0052—Other operations not otherwise provided for
- B32B2038/0064—Smoothing, polishing, making a glossy surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Definitions
- the present invention relates to a substrate for epitaxial growth and a method for manufacturing the same.
- the superconducting wire is a single layer or a plurality of layers made of an oxide layer such as cerium oxide (CeO 2 ), zirconia-added yttrium oxide (YSZ), yttrium oxide (Y 2 O 3 ), or a buffer layer on a metal substrate.
- An intermediate layer is laminated, and a superconducting layer (RE123 film, RE: Y, Gd, Ho, Sm, Dy, etc.) is further laminated thereon.
- a metal substrate with a biaxial crystal orientation produced using a rolled / recrystallized structure is used to carry out film formation by inheriting the crystal orientation from the intermediate layer and superconducting layer.
- Methods (such as RABiTS method) are known.
- RABiTS method RABiTS method
- the metal substrate has a high biaxial crystal orientation, and if there is something other than a specific crystal orientation, the superconducting property is adversely affected.
- Patent Document 1 As a method for producing a metal substrate (epitaxial growth substrate) in which a surface metal layer is highly oriented, a method described in (Patent Document 1) is known.
- Patent Document 1 includes a step of removing the adsorbate on the surface by sputter etching the surface of the copper foil while keeping the copper foil rolled at a rolling reduction of 90% or less below the crystal orientation temperature; A step of sputter etching the surface of the magnetic metal plate to remove the adsorbate on the surface, a step of bonding the copper foil and the metal plate with a pressure of 300 MPa to 1500 MPa by a rolling roll, and the bonded laminate Of the metal multilayer substrate for an oxide superconducting wire having a step of crystallizing the copper by heating to a temperature equal to or higher than a crystal orientation temperature of copper and a step of coating a protective layer on the copper side surface of the laminate.
- a manufacturing method is disclosed.
- the crystal orientation of the entire copper layer does not progress by the subsequent orientation heat treatment, and the C-axis orientation ratio ( It has been found that (the ratio of (200) plane) greatly decreases to 90% or less.
- Patent Document 2 describes that a treatment for reducing the surface roughness Ra of the copper layer may be performed after the nonmagnetic metal plate and the copper layer are bonded.
- methods such as rolling with a rolling roll, buffing, electrolytic polishing, electrolytic abrasive polishing and the like are disclosed.
- abnormal portion an abnormal orientation portion that is not oriented in the (200) plane appears on the outermost layer.
- mechanical polishing refers to physical polishing or chemical mechanical polishing that polishes the surface with a physical force using an abrasive, polishing stone, polishing cloth, etc., for example, roll polishing, grinder polishing, Dry or wet mechanical polishing such as hand polishing and buffing is included.
- the copper layer before the orientation heat treatment has an fcc rolling texture (that is, (220) plane orientation) and at the same time a large work strain is introduced, Two processes of reorienting the copper layer by heat treatment to be oriented in the (200) plane are essential.
- the processing strain introduced by rolling disappears in the copper crystal grains recrystallized in the (200) plane once heated.
- the C-axis orientation ratio was reduced in XRD measurement as shown in (Patent Document 1).
- the C-axis orientation ratio was 99% in the XRD measurement of the copper layer, even though the area ratio of the abnormal part on the surface of the copper layer exceeded 2%.
- the normal (200) plane has crystal grains with a grain size of about 30 ⁇ m to 200 ⁇ m, but this abnormal part is an aggregate of grains with a small grain size. It can be seen that the film is not oriented, that is, the orientation is abnormal. As shown in FIG. 1, this abnormal part appears on the very surface layer of the copper layer (within 3 ⁇ m from the surface of the copper layer) (FIG. 1 (b)), and the copper existing below the abnormal part is ( 200) normal orientation.
- the processing strain a2 is introduced only into the outermost layer of the crystallized portion a1 by mechanical polishing with the polishing wheel 30 (FIG. 2B).
- the processing strain a2 introduced by the mechanical polishing is a cutting strain, which is different from the strain introduced by the high pressure rolling at the time of copper layer production, and is large enough to be introduced by the high pressure rolling. Since it is not a processing strain, it is not oriented in the (200) plane by the subsequent heat treatment, and eventually becomes an abnormal part a3 (FIG. 2 (c)).
- the (200) plane is also included in the copper layer before joining, the (200) plane is in a state in which a large working strain is introduced by high-pressure rolling in the same manner as the surrounding (220) plane. Therefore, it is not affected by processing strain introduced by subsequent mechanical polishing. Therefore, it does not hinder obtaining a high (200) crystal orientation during the heat treatment.
- an object of the present invention is to provide a substrate for epitaxial growth in which the abnormal portion a3 is not formed and has higher biaxial crystal orientation, and a method for manufacturing the same. .
- the present inventors have used a copper layer of I0 Cu ⁇ 20% when the ratio of the (200) plane of the copper layer before lamination is I0 Cu , and The increase rate of the (200) plane ratio before and after lamination is less than 13%, and the (200) plane ratio I0 CLAD of the laminated copper layer is less than 20%, thereby suppressing the appearance of abnormal parts after heat treatment.
- the present invention has been completed by finding out what can be done. That is, the gist of the present invention is as follows.
- the epitaxial growth substrate refers to a biaxial crystal-oriented copper layer or a copper layer and a protective layer laminated on a metal base material. Therefore, the substrate for epitaxial growth is a substrate for forming a photovoltaic layer such as Si in addition to a substrate for a superconducting wire used for producing a superconducting wire by forming an intermediate layer and a superconducting layer thereon. And a concept including a semiconductor substrate for forming a semiconductor layer.
- Epitaxial growth including a step of laminating a copper layer having a metal base material and an fcc rolling texture by surface activation bonding, a step of mechanically polishing the copper layer, and a step of performing an orientation heat treatment of the copper layer
- the manufacturing method of the said substrate for epitaxial growth which laminates
- the step of laminating by surface activated bonding is performed by bonding the metal substrate and the copper layer with a rolling roll, and the step of mechanical polishing is polishing in the same direction as the rolling direction by roll-type buffing. Is applied by light rolling at a rolling reduction of 0 to 1% with a mirror roll, and the copper layer after mechanical polishing is along the same direction as the rolling direction per unit length of 60 ⁇ m by AFM measurement.
- polishing in the same direction as the rolling direction means that the feeding direction of the laminated material composed of the metal base material and the copper layer at the time of polishing is the same as the rolling direction.
- the rotation direction of the roll used for polishing may be the forward direction with respect to the feeding direction of the laminated material, or may be the reverse direction in order to increase the cutting amount.
- a metal substrate and a copper layer are laminated, and a protective layer made of nickel or a nickel alloy is further laminated on the copper layer, and crystal grains having crystal orientations other than the (200) plane occupy the surface of the protective layer.
- An epitaxial growth substrate having a ratio of less than 2.0%.
- an epitaxial growth substrate in which the appearance of abnormal parts after heat treatment is suppressed and the copper layer or a protective layer such as nickel provided on the copper layer is highly biaxially crystallized.
- a superconducting wire having excellent characteristics can be produced.
- FIG. 1 is a scanning ion microscope (SIM) image by the focused ion beam (FIB) of the abnormal part in the epitaxial growth substrate produced by the prior art
- FIG. 6 is an optical microscope image of a protective layer surface in an epitaxial growth substrate according to Comparative Example 3.
- FIG. 6 is an optical microscope image of a protective layer surface in an epitaxial growth substrate according to Comparative Example 3.
- the manufacturing method of the substrate for epitaxial growth of the present invention includes a step of laminating a copper layer having a metal base material and an fcc rolling texture by surface activated bonding, a step of mechanically polishing the copper layer, and an orientation of the copper layer. And a step of performing a heat treatment.
- nonmagnetic metal plate As the metal substrate, a nonmagnetic metal plate is used in the case of a superconducting wire.
- a copper layer may be laminated
- “non-magnetic” means a state in which the magnetic material is not ferromagnetic at 77K or higher, that is, a Curie point or a Neel point is present at 77K or lower and becomes a paramagnetic material or diamagnetic material at a temperature of 77K or higher.
- a nickel alloy or an austenitic stainless steel plate is preferably used because it has a role as a reinforcing material having excellent strength.
- austenitic stainless steel is non-magnetic at room temperature, that is, the metal structure is 100% austenite ( ⁇ ) phase, but the martensite ( ⁇ ′) phase transformation point (Ms point) which is a ferromagnetic material is 77K.
- the ⁇ ′ phase which is a ferromagnetic substance, may develop at the liquid nitrogen temperature.
- the metal base material of the epitaxial growth substrate used under the liquid nitrogen temperature (77K) those whose Ms point is designed to be 77K or less are preferably used.
- SUS316, SUS316L, SUS310, and SUS305 have a stable ⁇ phase designed with a Ms point sufficiently lower than 77K, and are generally popular and available at a relatively low price. Etc. is preferably used.
- the thickness of these metal plates is usually applicable if it is 20 ⁇ m or more, and considering the thinning and strength of the superconducting wire, it is preferably 50 ⁇ m or more and 100 ⁇ m or less, but is not limited to this range. Absent.
- the copper layer to be laminated with the metal substrate has an fcc rolling texture, preferably cold rolled at a rolling reduction after final rolling of 90% or more, more preferably 95% or more and less than 99%, Further, after the cold rolling, heat treatment for recrystallization is not performed, and the rolling texture developed by cold rolling is retained. If the rolling reduction is less than 90%, copper may not be oriented in the orientation heat treatment performed later.
- the copper layer may contain a trace element of about 1% or less in order to improve the biaxial crystal orientation by the subsequent heat treatment.
- a trace element of about 1% or less in order to improve the biaxial crystal orientation by the subsequent heat treatment.
- examples of such an additive element include one or more elements selected from Ag, Sn, Zn, Zr, O, N, and the like. These additive elements and copper form a solid solution, but if the addition amount exceeds 1%, impurities such as oxides other than the solid solution increase, which may adversely affect the crystal orientation.
- a copper foil is preferably used as such a copper layer.
- Copper foil is also generally available, for example, high-rolled copper foil (HA foil) manufactured by JX Nippon Mining & Metals, and high-rolled copper foil (HX foil) manufactured by SH Copper Products Co., Ltd. Etc.
- the thickness of the copper layer is usually in the range of 7 ⁇ m to 70 ⁇ m, preferably 15 ⁇ m to 70 ⁇ m in order to ensure the strength of the copper layer itself and to improve the workability when processing the superconducting wire later.
- the metal base material 1 and the copper layer 2 are formed into a long coil having a width of 150 mm to 600 mm, for example.
- the metal substrate 1 and the copper layer 2 having the joint surface are each grounded as one electrode, and an alternating voltage is applied between the other electrodes that are insulated and supported to generate glow discharge. Then, the surface of the metal substrate 1 and the copper layer 2 is exposed in the plasma generated by glow discharge, and sputter etching is performed.
- Applicable inert gas includes argon, neon, xenon, krypton, and a mixed gas containing at least one of these.
- the grounded electrode takes the form of a cooling roll 4 to prevent the temperature of each conveying material from rising.
- I0 CLAD -I0 Cu By making the value of I0 CLAD -I0 Cu preferably 6% or less, particularly 5% or less, the appearance of abnormal parts can be more effectively suppressed.
- the specific conditions for adjusting the etching time, output, etc. vary depending on the balance with other conditions such as the tension applied to the copper layer and are not particularly limited, but the total etching time is 15 to 60 seconds.
- the output when generating glow discharge is suitably set within the range of 50 W to 150 W, preferably 70 W to 130 W.
- I0 CLAD -I0 Cu is preferably 6% or less, more preferably 5% or less.
- the adsorbate on the bonding surface is completely removed, but the surface oxide layer need not be completely removed. This is because, even if an oxide layer remains on the entire surface, it is possible to ensure the bondability between the metal substrate and the copper layer by exposing the substrate by friction at the bonding surface in the cold welding process. .
- the temperature of the material may increase.
- the temperature of the copper layer rises above the copper recrystallization start temperature, copper recrystallization occurs, and the copper layer is crystallized before bonding.
- the temperature of the copper layer is kept below 150 ° C.
- the metal structure of the copper layer is maintained at 100 ° C. or lower and the rolled texture is maintained.
- the temperature of the metal substrate 1 is kept below the recrystallization start temperature of the copper layer 2.
- the conditions of the sputter etching process of the metal substrate 1 are controlled so that the temperature of the copper layer 2 is less than 150 ° C.
- the degree of vacuum at this time is preferably higher in order to prevent re-adsorbed substances on the surface, but may be in the range of 10 ⁇ 5 Pa to 10 ⁇ 2 Pa.
- the joining by the rolling roll 5 is performed in a non-oxidizing atmosphere, for example, an inert gas atmosphere such as Ar. It is also preferable to do this.
- Pressing with the rolling roll 5 is performed in order to secure a close contact area at the bonding interface and to partially peel off the surface oxide layer by friction occurring at the bonding interface at the time of rolling down, to expose the substrate, and it is preferable to add 300 MPa or more, In particular, since the metal substrate 1 and the copper layer 2 are both hard materials, pressurization at 600 MPa to 1.5 GPa is preferable.
- the pressure may be applied more than this, and it has been confirmed that the crystal orientation does not deteriorate after the subsequent heat treatment up to a reduction rate of 30%, but the pressure is preferably reduced to a reduction rate of less than 5%. Applying a pressure exceeding 30% in terms of the rolling reduction is not preferable because cracks are generated on the surface of the copper layer 2 and the crystal orientation of the copper layer 2 after rolling and heat treatment deteriorates.
- the copper layer is mechanically polished to reduce the surface roughness of the copper layer. Mechanical polishing is excellent in productivity and can obtain a sufficient surface roughness.
- the longitudinal direction of the laminated material is the same as the rolling direction.
- the amount of cutting in the thickness direction by mechanical polishing is preferably 2 ⁇ m or more in order to remove the crack defects.
- the superconducting wire particularly when the surface roughness in the longitudinal direction is increased, the superconducting current is inhibited, so that the superconducting characteristics are remarkably deteriorated. Therefore, priority is given to reducing the surface roughness Ra1 along the longitudinal direction (the same direction as the rolling direction). In order to flatten Ra1, it is preferable to set the cutting amount in the thickness direction to 5 ⁇ m or less.
- Ra1 in the rolling direction it is particularly effective to perform buffing as mechanical polishing.
- the type of abrasive grains used for buffing can be selected as appropriate.
- AFM measurement is performed by performing buffing using Al 2 O 3 abrasive grains.
- Ra1 per unit length of 60 ⁇ m can be reduced to less than 10 ⁇ m.
- This buffing process may be performed a plurality of times, for example, in multiple stages.
- Ra2 the surface roughness along the direction perpendicular to the rolling direction is not easily reduced, and Ra2 may be rather increased due to polishing marks called buffing.
- An increase in Ra2 is not as high as Ra1, but may lead to a decrease in superconducting characteristics.
- Ra2 is large or Rzjis (ten-point average roughness. Only the reference length is extracted from the roughness curve in the direction of the average line, and the average line of the extracted portion is extracted in the direction of the vertical magnification. Calculate the sum of the average value of the absolute values of the measured altitudes (Yp) from the highest peak to the fifth peak and the absolute value of the absolute values of the lowest peak (Yv) from the lowest peak to the fifth peak.
- the value is expressed in micrometer ( ⁇ m).
- Ni crystals preferentially precipitate from the convex portions of the copper layer.
- the surface roughness may be slightly deteriorated. Therefore, it is preferable to perform light rolling at a rolling reduction of 0 to 1% with a mirror roll after polishing in the same direction as the rolling direction by roll buffing. It was found that Ra2 and Rzjis can be made sufficiently small by performing light rolling. In particular, by repeating twice or more the light rolling, Ra2 less than 15nm per 60 [mu] m unit length, the Rzjis unit area 60 ⁇ 60 [mu] m 2 per can be less than 200 nm. At this time, the surface roughness Ra per unit area 60 ⁇ 60 ⁇ m 2 is less than 20 nm, preferably less than 15 nm. In addition, all the surface roughness in this invention says the value measured according to JISB0601: 2001.
- Rzjis per 60 ⁇ 60 ⁇ m 2 is preferably Ra1 ⁇ 10 nm, Ra2 ⁇ 30 nm, Rzjis ⁇ 220 nm, more preferably Ra1 ⁇ 7 nm, Ra2 ⁇ 20 nm, Rzjis ⁇ 200 nm, and more preferably Ra1 ⁇ 6 nm, Ra2 ⁇ 13 nm, and Rzjis ⁇ 170 nm.
- polishing methods may be used as necessary in addition to buffing or buffing and light rolling with a mirror roll.
- electrolytic polishing electrolytic polishing Examples thereof include grain polishing. Since electropolishing does not introduce processing strain, it can also be performed after the step of orientation heat treatment.
- an epitaxial growth substrate in which the copper layer is crystallized can be obtained by subjecting the laminate of the metal base material and the copper layer subjected to mechanical polishing to orientation heat treatment of the copper layer.
- the orientation heat treatment is performed at a temperature of 150 ° C. or higher.
- the heat treatment time varies depending on the temperature. For example, if it is 400 ° C., it is preferably 1 hour to 10 hours, and if it is 700 ° C. or higher, it may be held for several seconds to 5 minutes. If the heat treatment temperature is too high, the copper layer is liable to cause secondary recrystallization and the crystal orientation is deteriorated.
- the substrate is placed in a high temperature atmosphere of 600 ° C. to 900 ° C.
- the crystal orientation of the copper layer and the protective layer formed thereafter is further improved by performing heat treatment at low temperature (first heat treatment) and then heat treatment at high temperature (second heat treatment) step by step.
- first heat treatment low temperature
- second heat treatment high temperature
- heat treatment at 850 ° C. to 900 ° C. is performed after heat treatment at 250 ° C. to 325 ° C.
- the heat treatment time in the first heat treatment can be about 5 minutes to 240 minutes.
- the heat treatment time in the second heat treatment varies depending on other conditions, but is preferably a relatively short time. Specifically, the soaking time is preferably less than 10 minutes, particularly preferably 1 to 5 minutes. .
- the soaking time here means the time for holding the copper layer in the furnace where the temperature reaches a predetermined temperature. If the soaking time is 10 minutes or more, the surface roughness of the copper layer may be slightly deteriorated, or secondary recrystallization or excessive rearrangement may occur. May lead to deterioration of the surface roughness of the protective layer.
- each crystal grain having a crystal orientation other than the (200) plane has a crystal grain size of several ⁇ m, as seen in the SIM image, which is apparent in comparison with a crystal grain having a crystal orientation of the (200) plane.
- fine crystal grains of several ⁇ m form an aggregate (width: 20 ⁇ m to 50 ⁇ m, length: 50 to 150 ⁇ m), and therefore can be discriminated by observation with an optical microscope. .
- the area occupied by the crystal grains having a crystal orientation other than the (200) plane is observed with an optical microscope for 10 arbitrarily selected fields of 1.5 mm 2 and is an average value of the area ratios calculated for each field.
- the optical microscope image shown in FIG. 4A is binarized as shown in FIG.
- a protective layer made of nickel or a nickel alloy can be formed by plating on the biaxially crystallized copper layer. Since the crystal orientation of the copper layer is inherited in the protective layer, the metal base material and the copper layer are laminated, and further, a protective layer made of nickel or a nickel alloy is laminated on the copper layer, and the surface of the protective layer Thus, an epitaxial growth substrate can be obtained in which the proportion of crystal grains having crystal orientations other than the (200) plane is less than 2.0%.
- the protective layer containing nickel has better oxidation resistance than the copper layer, and the presence of the protective layer allows the formation of an oxide layer of CeO 2 and the formation of a copper oxide film on the crystal orientation. It is possible to prevent the characteristics from breaking.
- the element contained in the nickel alloy is preferably one that reduces magnetism, and examples thereof include elements such as Cu, Sn, W, and Cr. Further, impurities may be included as long as the crystal orientation is not adversely affected.
- the protective layer which consists of nickel or a nickel alloy by plating a micro dent becomes conspicuous on the surface.
- the abnormal part which is not oriented in the (200) plane has agglomerated small crystal grains, it can be distinguished from the above-mentioned dents by observation with an optical microscope. However, when the optical microscope image is binarized, the dents that become black dots are added as black portions in the same manner as the abnormal portion, and the calculated area ratio of the apparent abnormal portion increases.
- the area ratio of the black part when binarized is 0.5 to 1%, and the copper in which the abnormal part appears Even when nickel or nickel alloy plating is performed on the layer, the calculated area ratio of the abnormal portion increases more than the measured value of the copper layer before plating.
- the area ratio of the abnormal part itself does not increase extremely due to the formation of the protective layer. Therefore, in the present invention, the surface of the protective layer obtained by binarization treatment by optical microscope observation. If the proportion of crystal grains having crystal orientations other than (200) plane is less than 2.0%, it can be determined that a high degree of crystal orientation is obtained.
- the thickness of the protective layer made of nickel or nickel alloy is too thin, Cu may diffuse to the surface of the protective layer when the intermediate layer or superconducting compound layer is laminated thereon, and the surface may be oxidized. If it is too thick, the crystal orientation of the protective layer is lost, and the plating strain is also increased. Specifically, it is preferably 1 ⁇ m or more and 5 ⁇ m or less.
- the plating treatment can be performed by appropriately adopting conditions that reduce the plating strain of the protective layer.
- the plating strain refers to the degree of strain (strain) generated in the plating film when plating is applied to a base such as a metal plate.
- a layer made of nickel is formed as the protective layer, it can be performed using a Watt bath or a sulfamic acid bath known conventionally as a plating bath.
- the sulfamic acid bath is preferably used because it easily reduces the plating strain of the protective layer.
- the preferable range of a plating bath composition is as follows, it is not limited to this.
- the current density at the time of performing the plating process is not particularly limited, and is appropriately set in consideration of the balance with the time required for the plating process. Specifically, for example, when a plating film of 2 ⁇ m or more is formed as a protective layer, the time required for the plating process becomes long if the current density is low, and the line speed is slowed down in order to secure the time.
- the current density is preferably set to 10 A / dm 2 or more because the properties may be lowered or the control of the plating may be difficult.
- the upper limit of the current density varies depending on the type of plating bath and is not particularly limited.
- the surface roughness of the protective layer after plating is often larger than the surface roughness of the copper layer before plating, but the crystal orientation of the protective layer may be lost, so polishing cannot be performed after the protective layer is formed. . Therefore, the surface roughness Ra (Ni) per unit area 60 ⁇ 60 ⁇ m 2 is preferably 25 nm or less, more preferably 20 nm or less, by controlling the plating conditions.
- the formed protective layer may generate micropits on the surface depending on plating conditions.
- the surface can be smoothed by further averaging after the plating.
- the heat treatment temperature is preferably 700 to 1000 ° C., for example.
- a superconducting wire can be manufactured by sequentially laminating an intermediate layer and a superconducting layer on the protective layer in the epitaxial growth substrate as described above according to a conventional method. Specifically, an intermediate layer such as CeO 2 , YSZ, SrTiO 3 , MgO, and Y 2 O 3 is epitaxially formed on the protective layer formed by plating using means such as a sputtering method, and further thereon.
- a superconducting wire can be obtained by forming a superconducting layer such as Y123 based on a laser ablation method or the like. If necessary, a protective film made of Ag, Cu or the like may be further provided on the superconducting layer.
- Examples 1 to 4 and Comparative Examples 1 to 2 First, SUS316L (thickness: 100 ⁇ m) was used as a metal base material, and a copper foil (thickness as shown in Table 1) cold-rolled at a high pressure reduction ratio (96 to 99% reduction ratio) was applied to the surface activated contact.
- a sputter etching process was performed in an Ar gas atmosphere of 0.05 to 1 Pa by a legal method, and then cold pressed at a reduction rate of 0.1 to 1% to prepare a laminated material.
- the sputter etching process was performed by installing two devices with an output of 100 W in the example and installing two devices with an output of 160 W in the comparative example.
- the total processing time was 30 seconds.
- the bonded copper layer was mechanically polished. Specifically, roll buffing with SiC abrasive grains was performed along the rolling direction, and then roll buffing with Al 2 O 3 abrasive grains was performed. Next, light rolling using a mirror roll with a rolling reduction of 0 to 1% was repeated three times in total. About the laminated material of Example 1, surface roughness Ra1, Ra2, Rzjis1, Rzjis2 per unit length of 60 micrometers, and unit area 60 using AFM apparatus (Nano ScopeIIIaD3000 by Digital Instruments) after each process of mechanical polishing. Ra and Rzjis per ⁇ 60 ⁇ m 2 were measured. The results are shown in FIGS. 5 and 6, “asclad” indicates the state of the laminated material before mechanical polishing, and “1pass” to “3pass” indicate the first to third light rolling with a mirror roll.
- the orientation heat treatment of the copper layer in each example and comparative example was performed.
- a heat treatment is performed at a temperature of 250 to 300 ° C. and a soaking time of 5 minutes, and then a heat treatment of a temperature of 850 to 875 ° C. and a soaking time of 5 minutes is performed as a second step. did. All heat treatments were performed in a continuous heat treatment furnace.
- the surface of the copper layer is observed with an optical microscope for the presence and area ratio of crystal grains having crystal orientations other than the (200) plane existing within 3 ⁇ m from the surface and the area ratio.
- the image was calculated by binarization processing. The results are shown in Table 1.
- the C-axis orientation ratio of the copper layer after the heat treatment was 99% or more in each of Examples 1 to 4 and Comparative Examples 1 and 2.
- Example 5 and Comparative Example 3 each of the epitaxial growth substrate having no abnormal part obtained in Example 1 and the epitaxial growth substrate having the abnormal part obtained in Comparative Example 1 was subjected to nickel plating to form a protective layer.
- the products thus obtained are referred to as Example 5 and Comparative Example 3, respectively.
- the optical microscope observation of the protective layer surface was performed. The results are shown in FIGS. In each figure, (a) represents an optical microscope image, and (b) represents a binarized image.
- the proportion of crystal grains having a crystal orientation other than the (200) plane on the surface of the protective layer calculated through the binarization treatment was 0.9% in Example 5 and 3% in Comparative Example 3, It was shown that a high degree of crystal orientation was obtained in the epitaxial growth substrate.
- the surface roughness of the surface of the protective layer was measured, the surface roughness Ra (Ni) per unit area 60 ⁇ 60 ⁇ m 2 of Example 5 was 19.5 nm, and the surface roughness Ra (Ni) of Comparative Example 3 was 23 nm. there were.
- the degree of crystal orientation slightly deteriorates. If the rolling reduction exceeds 2%, strain due to rolling is introduced into the copper layer, which is considered to have an adverse effect upon crystal orientation. Therefore, the rolling reduction is preferably 2% or less, more preferably 1.5% or less, and particularly preferably 1% or less.
- the reduction ratio is 0%, the set reduction amount of the rolling mill is ⁇ 0.15 ⁇ m, and it is not necessarily reduced, but a difference is observed in the ⁇ m order in the laminate before and after rolling. The calculated value based on the plate thickness was 0%.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Fluid Mechanics (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Laminated Bodies (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
XRD測定による積層前の銅層及び積層後の銅層の(200)面の割合をそれぞれI0Cu、I0CLADとし、積層前の銅層及び積層後の銅層の(220)面の割合をそれぞれI2Cu、I2CLADとしたとき、I0Cu<20%、I2Cu=70~90%であり、且つ、I0CLAD<20%、I2CLAD=70~90%及びI0CLAD-I0Cu<13%となるように積層する、前記エピタキシャル成長用基板の製造方法。
(2)配向化熱処理を行った後の銅層の表面において、表面から3μm以内に存在する(200)面以外の結晶方位を持つ結晶粒が占める面積が1.5%未満である上記(1)に記載のエピタキシャル成長用基板の製造方法。
(3)機械研磨による厚み方向への切削量が2μm~5μmである上記(1)又は(2)に記載のエピタキシャル成長用基板の製造方法。
(4)機械研磨を施す工程が、バフ研磨を含む上記(1)~(3)のいずれかに記載のエピタキシャル成長用基板の製造方法。
(5)表面活性化接合にて積層する工程が、金属基材及び銅層を圧延ロールにより接合して行われ、機械研磨を施す工程が、ロール式バフ研磨によって圧延方向と同方向に研磨を施した後、鏡面ロールによる圧下率0~1%の軽圧延を施すことにより行われ、機械研磨を施した後の銅層において、AFM測定による単位長さ60μm当たりの圧延方向と同方向に沿った表面粗度がRa1<10nmであり、圧延方向と直角方向に沿った表面粗度がRa2<30nmである上記(1)~(4)のいずれかに記載のエピタキシャル成長用基板の製造方法。
なお、ここで「圧延方向と同方向に研磨を施す」とは、研磨時における金属基材及び銅層からなる積層材の送り方向を、圧延方向と同方向にすることを意味する。研磨に用いるロールの回転方向は、積層材の送り方向に対し順方向としても良く、あるいは切削量を大きくするために逆方向としても良い。
(6)金属基材及び銅層が積層され、銅層の表面において、表面から3μm以内に存在する(200)面以外の結晶方位を持つ結晶粒が占める面積が1.5%未満であるエピタキシャル成長用基板。
(7)金属基材及び銅層が積層され、さらに銅層に対しニッケル又はニッケル合金からなる保護層が積層され、保護層の表面において、(200)面以外の結晶方位を持つ結晶粒が占める割合が2.0%未満であるエピタキシャル成長用基板。
(ワット浴)
硫酸ニッケル 200~300g/l
塩化ニッケル 30~60g/l
ホウ酸 30~40g/l
pH 4~5
浴温 40~60℃
(スルファミン酸浴)
スルファミン酸ニッケル 200~600g/l
塩化ニッケル 0~15g/l
ホウ酸 30~40g/l
添加剤 適量
pH 3.5~4.5
浴温 40~70℃
まず、金属基材としてSUS316L(厚さ100μm)を用い、これに高圧下率(圧下率96~99%)で冷間圧延した銅箔(厚さは表1に示すとおり)を表面活性化接合法により0.05~1PaのArガス雰囲気中でスパッタエッチング処理を行った後0.1~1%の圧下率にて冷間圧接して積層材を作製した。スパッタエッチング処理は、実施例では出力100Wの装置を2個設置、比較例では出力160Wの装置を2個設置して行った。処理時間はいずれもトータルで30秒とした。
次に、実施例1により得られた異常部を有さないエピタキシャル成長用基板と、比較例1により得られた異常部を有するエピタキシャル成長用基板のそれぞれに、ニッケルめっきを施して保護層を形成した。これにより得られたものを、それぞれ実施例5及び比較例3とする。そして、実施例5及び比較例3に係るエピタキシャル成長用基板について、保護層表面の光学顕微鏡観察を行った。その結果を図7及び図8に示す。それぞれの図中、(a)は光学顕微鏡像を表し、(b)はそれを2値化処理したものを表す。2値化処理を経て算出された保護層表面における(200)面以外の結晶方位を持つ結晶粒が占める割合は、実施例5が0.9%、比較例3が3%となり、本願発明のエピタキシャル成長用基板においては高度な結晶配向性が得られていることが示された。保護層表面の表面粗度を測定したところ、実施例5の単位面積60×60μm2当たりの表面粗度Ra(Ni)は19.5nm、比較例3の表面粗度Ra(Ni)は23nmであった。
鏡面ロールによる軽圧延における、圧下率の影響について調査した。
2 銅層
3 スパッタエッチング装置
4 冷却ロール
5 圧延ロール
10 金属基材
20 銅層
21 (200)面に配向した銅層
30 研磨輪
a1 再結晶した部位
a2 加工ひずみ
a3 異常部
Claims (7)
- 金属基材及びfcc圧延集合組織を有する銅層を表面活性化接合にて積層する工程と、銅層に機械研磨を施す工程と、銅層の配向化熱処理を行う工程とを含むエピタキシャル成長用基板の製造方法であって、
XRD測定による積層前の銅層及び積層後の銅層の(200)面の割合をそれぞれI0Cu、I0CLADとし、積層前の銅層及び積層後の銅層の(220)面の割合をそれぞれI2Cu、I2CLADとしたとき、I0Cu<20%、I2Cu=70~90%であり、且つ、I0CLAD<20%、I2CLAD=70~90%及びI0CLAD-I0Cu<13%となるように積層する、前記エピタキシャル成長用基板の製造方法。 - 配向化熱処理を行った後の銅層の表面において、表面から3μm以内に存在する(200)面以外の結晶方位を持つ結晶粒が占める面積が1.5%未満である請求項1に記載のエピタキシャル成長用基板の製造方法。
- 機械研磨による厚み方向への切削量が2μm~5μmである請求項1又は2に記載のエピタキシャル成長用基板の製造方法。
- 機械研磨を施す工程が、バフ研磨を含む請求項1~3のいずれかに記載のエピタキシャル成長用基板の製造方法。
- 表面活性化接合にて積層する工程が、金属基材及び銅層を圧延ロールにより接合して行われ、機械研磨を施す工程が、ロール式バフ研磨によって圧延方向と同方向に研磨を施した後、鏡面ロールによる圧下率0~1%の軽圧延を施すことにより行われ、機械研磨を施した後の銅層において、AFM測定による単位長さ60μm当たりの圧延方向と同方向に沿った表面粗度がRa1<10nmであり、圧延方向と直角方向に沿った表面粗度がRa2<30nmである請求項1~4のいずれかに記載のエピタキシャル成長用基板の製造方法。
- 金属基材及び銅層が積層され、銅層の表面において、表面から3μm以内に存在する(200)面以外の結晶方位を持つ結晶粒が占める面積が1.5%未満であるエピタキシャル成長用基板。
- 金属基材及び銅層が積層され、さらに銅層に対しニッケル又はニッケル合金からなる保護層が積層され、保護層の表面において、(200)面以外の結晶方位を持つ結晶粒が占める割合が2.0%未満であるエピタキシャル成長用基板。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202211175335.8A CN115572928A (zh) | 2015-10-23 | 2016-10-21 | 外延生长用基板及其制造方法 |
DE112016004857.2T DE112016004857T5 (de) | 2015-10-23 | 2016-10-21 | Substrat für Epitaxialwachstum und Verfahren zu dessen Herstellung |
JP2017545817A JP6948621B2 (ja) | 2015-10-23 | 2016-10-21 | エピタキシャル成長用基板及びその製造方法 |
KR1020187009230A KR102502187B1 (ko) | 2015-10-23 | 2016-10-21 | 에피택셜 성장용 기판 및 그 제조 방법 |
CN201680060793.3A CN108138356B (zh) | 2015-10-23 | 2016-10-21 | 外延生长用基板及其制造方法 |
US15/768,902 US11524486B2 (en) | 2015-10-23 | 2016-10-21 | Substrate for epitaxtail, growth and method for producing same |
US17/984,371 US20230082193A1 (en) | 2015-10-23 | 2022-11-10 | Substrate for epitaxial growth and method for producing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-209074 | 2015-10-23 | ||
JP2015209074 | 2015-10-23 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/768,902 A-371-Of-International US11524486B2 (en) | 2015-10-23 | 2016-10-21 | Substrate for epitaxtail, growth and method for producing same |
US17/984,371 Division US20230082193A1 (en) | 2015-10-23 | 2022-11-10 | Substrate for epitaxial growth and method for producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017069255A1 true WO2017069255A1 (ja) | 2017-04-27 |
Family
ID=58557078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/081314 WO2017069255A1 (ja) | 2015-10-23 | 2016-10-21 | エピタキシャル成長用基板及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US11524486B2 (ja) |
JP (1) | JP6948621B2 (ja) |
KR (1) | KR102502187B1 (ja) |
CN (2) | CN108138356B (ja) |
DE (1) | DE112016004857T5 (ja) |
WO (1) | WO2017069255A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010055612A1 (ja) * | 2008-11-12 | 2010-05-20 | 東洋鋼鈑株式会社 | 半導体素子形成用金属積層基板の製造方法及び半導体素子形成用金属積層基板 |
WO2011007527A1 (ja) * | 2009-07-17 | 2011-01-20 | 東洋鋼鈑株式会社 | 酸化物超電導線材用金属積層基板の製造方法及び酸化物超電導線材用金属積層基板 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4170615A (en) | 1977-12-27 | 1979-10-09 | Acf Industries, Inc. | Carburetor with second choke break |
JPS5723773A (en) | 1980-07-17 | 1982-02-08 | Fuji Electric Co Ltd | Refrigerated showcase |
US9080258B2 (en) * | 2009-07-10 | 2015-07-14 | North Carolina State University | Process of making highly oriented and crystalline thermoplastic filaments |
JP6250546B2 (ja) * | 2012-10-05 | 2017-12-20 | 東洋鋼鈑株式会社 | エピタキシャル成長用基板及びその製造方法、並びに超電導線材用基板 |
CN104511479B (zh) * | 2013-10-04 | 2017-01-11 | Jx日矿日石金属株式会社 | 轧制铜箔 |
JP6001004B2 (ja) | 2014-04-25 | 2016-10-05 | トヨタ紡織株式会社 | 乗物用シート |
KR102403087B1 (ko) * | 2014-10-27 | 2022-05-27 | 도요 고한 가부시키가이샤 | 초전도 선재용 기판 및 그 제조 방법과 초전도 선재 |
-
2016
- 2016-10-21 DE DE112016004857.2T patent/DE112016004857T5/de active Pending
- 2016-10-21 US US15/768,902 patent/US11524486B2/en active Active
- 2016-10-21 KR KR1020187009230A patent/KR102502187B1/ko active IP Right Grant
- 2016-10-21 CN CN201680060793.3A patent/CN108138356B/zh active Active
- 2016-10-21 CN CN202211175335.8A patent/CN115572928A/zh active Pending
- 2016-10-21 JP JP2017545817A patent/JP6948621B2/ja active Active
- 2016-10-21 WO PCT/JP2016/081314 patent/WO2017069255A1/ja active Application Filing
-
2022
- 2022-11-10 US US17/984,371 patent/US20230082193A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010055612A1 (ja) * | 2008-11-12 | 2010-05-20 | 東洋鋼鈑株式会社 | 半導体素子形成用金属積層基板の製造方法及び半導体素子形成用金属積層基板 |
WO2011007527A1 (ja) * | 2009-07-17 | 2011-01-20 | 東洋鋼鈑株式会社 | 酸化物超電導線材用金属積層基板の製造方法及び酸化物超電導線材用金属積層基板 |
Also Published As
Publication number | Publication date |
---|---|
DE112016004857T5 (de) | 2018-07-19 |
JP6948621B2 (ja) | 2021-10-13 |
US11524486B2 (en) | 2022-12-13 |
CN115572928A (zh) | 2023-01-06 |
CN108138356A (zh) | 2018-06-08 |
US20180297327A1 (en) | 2018-10-18 |
US20230082193A1 (en) | 2023-03-16 |
KR102502187B1 (ko) | 2023-02-21 |
JPWO2017069255A1 (ja) | 2018-08-09 |
CN108138356B (zh) | 2022-12-23 |
KR20180073563A (ko) | 2018-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5382911B2 (ja) | 酸化物超電導線材用金属積層基板の製造方法及び該基板を用いた酸化物超電導線材 | |
EP2455949B1 (en) | Metal laminated substrate for use as an oxide superconducting wire material, and manufacturing method therefor | |
JP5517196B2 (ja) | 超電導化合物用基板及びその製造方法 | |
JP5828014B2 (ja) | 半導体素子形成用金属積層基板の製造方法及び半導体素子形成用金属積層基板 | |
JP6539673B2 (ja) | 超電導線材用基板及びその製造方法、並びに超電導線材 | |
JP6244142B2 (ja) | 超電導線材用基板及びその製造方法、並びに超電導線材 | |
US10174420B2 (en) | Method for forming oxide layer, laminated substrate for epitaxial growth, and method for producing the same | |
WO2017069255A1 (ja) | エピタキシャル成長用基板及びその製造方法 | |
JP6250546B2 (ja) | エピタキシャル成長用基板及びその製造方法、並びに超電導線材用基板 | |
JP6074527B2 (ja) | エピタキシャル成長用基板及びその製造方法、並びに超電導線材用基板 | |
JP6666655B2 (ja) | エピタキシャル成長用積層基材の製造方法 | |
JP5918920B2 (ja) | 超電導化合物用基板及びその製造方法 | |
JP2013101832A (ja) | エピタキシャル成長用基板及びその製造方法、並びに超電導線材用基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16857568 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2017545817 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20187009230 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15768902 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 112016004857 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16857568 Country of ref document: EP Kind code of ref document: A1 |