WO2017056553A1 - 有機エレクトロルミネッセンス素子及びこれを備えた照明装置 - Google Patents
有機エレクトロルミネッセンス素子及びこれを備えた照明装置 Download PDFInfo
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- WO2017056553A1 WO2017056553A1 PCT/JP2016/066118 JP2016066118W WO2017056553A1 WO 2017056553 A1 WO2017056553 A1 WO 2017056553A1 JP 2016066118 W JP2016066118 W JP 2016066118W WO 2017056553 A1 WO2017056553 A1 WO 2017056553A1
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- TXXWBTOATXBWDR-UHFFFAOYSA-N n,n,n',n'-tetramethylhexane-1,6-diamine Chemical compound CN(C)CCCCCCN(C)C TXXWBTOATXBWDR-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
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- 125000005184 naphthylamino group Chemical group C1(=CC=CC2=CC=CC=C12)N* 0.000 description 1
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- 125000005146 naphthylsulfonyl group Chemical group C1(=CC=CC2=CC=CC=C12)S(=O)(=O)* 0.000 description 1
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- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
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- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
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- 239000004094 surface-active agent Substances 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- JTQAPFZZCXWQNQ-UHFFFAOYSA-N thiirene Chemical compound S1C=C1 JTQAPFZZCXWQNQ-UHFFFAOYSA-N 0.000 description 1
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- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- 125000004306 triazinyl group Chemical group 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1003—Carbocyclic compounds
- C09K2211/1007—Non-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/185—Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
Definitions
- the present invention relates to an organic electroluminescence element and a lighting device including the same. More specifically, the present invention relates to an organic electroluminescence element having a high light transmittance and a small difference in light transmittance between a light emitting region and a non-light emitting region, and an illumination device including the same.
- An organic electroluminescence (EL) element As an electronic device for illumination use, an organic electroluminescence (EL) element is widely known.
- An organic EL device has a structure in which a light-emitting layer containing a light-emitting compound is sandwiched between an anode and a cathode, and excitons (excitons) are generated by injecting electrons and holes into the light-emitting layer and recombining them.
- Patent Document 1 describes a flat surface portion parallel to one surface of an organic EL element and a flat surface portion for the purpose of improving luminous efficiency and making it difficult to visually recognize streaks due to concave portions or convex portions.
- a technique relating to a double-sided light emitting organic EL element provided with a concavo-convex structure having an inclined slope is disclosed.
- the technique disclosed in Patent Document 1 does not solve the degree of visual recognition due to the difference in light transmittance between the light emitting region and the non-light emitting region.
- the present invention has been made in view of the above-described problems and situations, and the problem to be solved is an organic electroluminescence element having a high light transmittance and a small difference in light transmittance between a light-emitting region and a non-light-emitting region. It is providing the illuminating device provided with this.
- the present inventor has a refractive index greater than the refractive index of the first optical adjustment layer and the refractive index of the second optical adjustment layer in the process of examining the cause of the above-described problem. Since the optical adjustment layer and the first optical adjustment layer and the second optical adjustment layer are provided in direct contact with each other, the light transmittance is high, and the difference in light transmittance between the light emitting region and the non-light emitting region. Was found to be able to provide an organic electroluminescence device having a small size, and the present invention was achieved.
- a sealing film is provided between the second optical adjustment layer and the adhesive, 2.
- An illumination device comprising the organic electroluminescence element according to any one of items 1 to 4.
- an organic electroluminescence element having a high light transmittance and a small difference in light transmittance between a light emitting region and a non-light emitting region, and an illumination device including the same.
- the organic EL element of the present invention is larger than the refractive index of the first optical adjustment layer and the refractive index of the second optical adjustment layer, and the upper transparent electrode, the first optical adjustment layer, and the first optical adjustment layer and the second optical adjustment layer.
- the adjustment layers are provided in direct contact with each other. That is, by defining the refractive index from the upper transparent electrode to the second optical adjustment layer, the light transmittance can be increased and the light transmittance difference between the light emitting region and the non-light emitting region can be reduced. it is conceivable that.
- Sectional drawing which shows schematic structure as an example of the organic EL element of this invention
- the top view which shows schematic structure as an example of the organic EL element of this invention
- the top view which shows schematic structure as an example of the organic EL element of this invention
- Sectional drawing which shows schematic structure as an example of the organic EL element of this invention
- Front view showing the outline of vacuum ultraviolet irradiation equipment
- the organic EL device of the present invention is a laminate in which at least a lower transparent electrode, an organic functional layer including a light emitting layer, an upper transparent electrode, a first optical adjustment layer, and a second optical adjustment layer are laminated in this order on a support substrate. And a sealing substrate bonded via an adhesive so as to cover the light emitting region of the light emitting layer, and the refractive index of the first optical adjustment layer is higher than the refractive index of the second optical adjustment layer.
- the upper transparent electrode and the first optical adjustment layer, and the first optical adjustment layer and the second optical adjustment layer are provided in direct contact with each other. This feature is a technical feature common to the claimed invention.
- a sealing film is provided between the second optical adjustment layer and the adhesive, and the sealing film is the second optical adjustment. It is preferably provided in direct contact with both the layer and the adhesive.
- the upper transparent electrode is preferably a metal thin film.
- the first optical adjustment layer contains a nitrogen-containing compound.
- the organic EL element of the present invention can be suitably used as a lighting device.
- ⁇ representing a numerical range is used in the sense that numerical values described before and after the numerical value range are included as a lower limit value and an upper limit value.
- the organic EL device of the present invention is a laminate in which at least a lower transparent electrode, an organic functional layer including a light emitting layer, an upper transparent electrode, a first optical adjustment layer, and a second optical adjustment layer are laminated in this order on a support substrate. And a support substrate and a sealing substrate bonded through an adhesive so as to cover the light emitting region of the light emitting layer.
- the light transmittance can be increased and the difference in light transmittance between the light emitting region and the non-light emitting region can be decreased.
- the light emitting region is a region where the support substrate, the lower transparent electrode, the organic functional layer, the upper transparent electrode, the first optical adjustment layer, the second optical adjustment layer, and the sealing substrate overlap when viewed in plan.
- the non-light-emitting region is an upper transparent electrode among the support substrate, the lower transparent electrode, the organic functional layer, the upper transparent electrode, the first optical adjustment layer, the second optical adjustment layer, and the sealing substrate when viewed in plan.
- it demonstrates using drawing.
- the organic EL element 1 of the present invention has a laminated body 14 and a sealing substrate 18 bonded to the laminated body 14 via an adhesive 16 on a support substrate 2.
- the lower transparent electrode 4, the organic functional layer 6, the upper transparent electrode 8, the first optical adjustment layer 10, and the second optical adjustment layer 12 are laminated in this order from the support substrate 2 side.
- the upper transparent electrode 8 and the first optical adjustment layer 10 and the first optical adjustment layer 10 and the second optical adjustment layer 12 are provided in direct contact with each other.
- a gas barrier layer may be provided on the laminated body side of the support substrate 2 and / or the sealing substrate 18.
- a region indicated by a symbol L is a light emitting region
- a region indicated by a symbol NL is a non-light emitting region.
- a power supply part 4 a of the lower transparent electrode 4 is provided at one end of the support substrate 2, and an upper transparent electrode is provided at the other end facing the power supply part 4 a.
- Eight feeding parts 8a are provided.
- the sealing substrate 18 is provided so as to cover at least the light emitting region where the lower transparent electrode 4, the organic functional layer 6, and the upper transparent electrode 8 overlap.
- the power feeding unit 4a of the lower transparent electrode 4 is provided at both opposing ends of the support substrate 2 as shown in FIG. 3 while maintaining the stacking order of the organic EL elements 1 shown in FIG. It is also possible to provide the feeding portion 8a of the upper transparent electrode 8 at opposite opposite ends.
- a sealing film 20 may be provided between the second optical adjustment layer 12 and the adhesive 16. At this time, the sealing film 20 is provided in direct contact with both the second optical adjustment layer 12 and the adhesive 16.
- Support substrate (2) There is no restriction
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate (TAC), cellulose acetate butyrate, cellulose acetate propionate ( CAP), cellulose esters such as cellulose acetate phthalate, cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by J
- ⁇ Gas barrier layer> The organic EL element easily deteriorates in performance when a small amount of moisture or oxygen is present inside the element. For this reason, it is preferable to provide a gas barrier layer having a high shielding ability against moisture and oxygen in order to prevent moisture and oxygen from entering the element through the support substrate.
- the support substrate on which the gas barrier layer is formed has a water vapor transmission rate of 1 ⁇ 10 ⁇ 3 g / g at a temperature of 25 ⁇ 0.5 ° C. and a relative humidity of 90 ⁇ 2% measured by a method according to JIS K 7129-1992. (M 2 ⁇ 24h) or less, and the oxygen permeability measured by a method according to JIS K 7126-1987 is preferably 1 ⁇ 10 ⁇ 3 ml / (m 2 ⁇ 24h ⁇ atm) ( Here, 1 atm is 1.01325 ⁇ 10 5 Pa.) Or less, and the water vapor permeability at a temperature of 25 ⁇ 0.5 ° C. and a relative humidity of 90 ⁇ 2% is 1 ⁇ 10 ⁇ 3 g / ( m 2 ⁇ 24h) or less is more preferable.
- a layer made of an inorganic compound such as silica can be formed by vacuum deposition or CVD.
- a gas barrier layer can be formed by combining a conventionally known silicon-containing polymer modified layer or silicon compound layer alone or in combination.
- the method for forming the gas barrier layer is not particularly limited.
- a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but an atmospheric pressure plasma polymerization method as described in JP-A-2004-68143 is also preferable.
- the polysilazane-containing liquid is applied and dried by a wet coating method, and the formed coating film is irradiated with vacuum ultraviolet light (VUV light) having a wavelength of 200 nm or less, and the formed coating film is subjected to a modification treatment, and gas A method of forming a barrier layer is also preferable.
- VUV light vacuum ultraviolet light
- the thickness of the gas barrier layer is preferably in the range of 1 to 500 nm, more preferably in the range of 10 to 300 nm. If the thickness of the gas barrier layer is 1 nm or more, a desired gas barrier performance can be exhibited, and if it is 500 nm or less, film quality deterioration such as generation of cracks in a dense silicon oxynitride film can be prevented. Can do.
- an antistatic layer may be provided on one surface of the support substrate.
- the antistatic layer is composed of an antistatic agent and a binder resin for holding the antistatic agent.
- the antistatic layer preferably contains an organic antistatic agent as an antistatic agent.
- the organic antistatic agent preferably contains one or more selected from conjugated polymers and ionic polymers.
- the antistatic layer may be configured to include other conductive polymers and antistatic agents.
- the antistatic layer preferably does not contain metal oxide particles that are easily desorbed during lamination as an antistatic agent.
- the content of the metal oxide particles with respect to the total mass of the antistatic layer is preferably 5% by mass or less, more preferably 2% by mass or less, and particularly preferably a configuration not containing metal oxide particles.
- the metal oxide particles that are preferably not contained in the antistatic layer include, for example, ZnO, TiO 2 , SnO 2 , Al 2 O 3 , In 2 O 3 , MgO, BaO, MoO 2 , V 2 O 5, etc. These composite oxides can be mentioned. However, SiO 2 is excluded from the definition of metal oxide particles that are preferably not contained in the antistatic layer.
- the organic antistatic agent is basically composed of an organic material having antistatic ability. When the antistatic layer is formed, the organic antistatic agent has a sheet resistance value of 1 ⁇ 10 11 ⁇ / sq. Hereinafter, preferably 1 ⁇ 10 10 ⁇ / sq. Hereinafter, more preferably 1 ⁇ 10 9 ⁇ / sq.
- the organic antistatic agent include conventionally known surfactant type antistatic agents, silicone antistatic agents, organic boric acid antistatic agents, polymeric antistatic agents, and antistatic polymer materials.
- an ionic conductive material or the like is preferably used as the organic antistatic agent from the viewpoint of antistatic properties of the antistatic layer.
- the ion conductive material is a material containing ions exhibiting electrical conductivity. Examples of the ion conductive substance include conjugated polymers and ionic polymers.
- conjugated polymer examples include ⁇ -electron conductive polymer composites of polymers having the following (1) to (8) in the side chain via a connecting group.
- Aliphatic conjugated system a carbon-carbon conjugated system, such as polyacetylene, which is continuously long alternately. For example, polyacetylene, poly (1,6-heptadiene), etc.
- Aromatic conjugated system poly (3) Heterocyclic conjugated systems such as polypyrrole, polythiophene, etc. (3) Heterocyclic conjugated systems such as polypyrrole and polythiophene.
- cyclic compounds such as polypyrrole and its derivatives, polyfuran and its derivatives, polythiophene and its derivatives, polyisothionaphthene and its derivatives, polyselenophene and its derivatives, etc.
- Heteroatom-containing conjugated system Aliphatic or aromatic conjugated systems such as polyaniline bonded with heteroatoms Polymers such as polyaniline and derivatives thereof, poly (paraphenylene sulfide) and derivatives thereof, poly (paraphenylene oxide) and derivatives thereof, poly (paraphenylene selenide) and derivatives thereof, Vinylene sulfide), poly (vinylene oxide), poly (vinylene selenide), etc.
- Mixed conjugated system a conjugated polymer having a structure in which structural units of the conjugated system such as poly (phenylene vinylene) are alternately bonded, For example, poly (paraphenylene vinylene) and its derivatives, poly (pyrrole vinylene) and its derivatives, poly (thiophene vinylene) and its derivatives, poly (furanylene) and its derivatives, poly (2,2'-thienylpyrrole) Derivatives, etc.
- Double-chain conjugated system A conjugated system with multiple conjugated chains in the molecule.
- a polymer having a structure close to an aromatic conjugated system for example, polyperinaphthalene, etc.
- Metal phthalocyanine series A polymer in which metal phthalocyanines or these molecules are bonded with a hetero atom or a conjugated system, for example, Metal phthalocyanine, etc.
- Conductive complex A polymer obtained by polymerizing the conjugated polymer in a saturated polymer and a polymer obtained by graft copolymerization of the conjugated polymer chain to a saturated polymer.
- Poly (thiophene vinylene) including its derivatives), etc.
- Examples of the ionic polymer include the following (1) to (3).
- Ionene type polymer having a group (3) JP-B 53-13223, JP-B 57-15376, JP-B 53-45231, JP-B 55-145783, JP-B 55-65950, Japanese Patent Publication No. 55-67746, Japanese Patent Publication No. 57-11342, Japanese Patent Publication No. 57-19735, Japanese Patent Publication No. 58-56858, Japanese Patent Publication No. 61- 7853 JP, as seen in JP-B-62-9346 Patent Publication, cationic pendant polymer having a cationic dissociative group in the side chain
- Examples of the conductive polymer constituting the antistatic layer include an ionene conductive polymer described in JP-A-9-203810, a quaternary ammonium cationic conductive polymer having intermolecular crosslinking, and the like.
- antistatic agents examples include antistatic hard coating agents described in JP-A-2006-265271, JP-A-2007-70456, JP-A-2009-62406, and the like. Can be used.
- an antistatic agent available from Aika Kogyo Co., Ltd. which is available as a commercial product, can be appropriately selected and used.
- binder resin examples include cellulose derivatives such as cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate phthalate, or cellulose nitrate, polyvinyl acetate, polystyrene, Polyesters such as polycarbonate, polybutylene terephthalate, or copolybutylene / tere / isophthalate, polyvinyl alcohol, polyvinyl formal, polyvinyl acetal, polyvinyl butyral, polyvinyl alcohol derivatives such as polyvinyl benzal, norbornene-based polymers containing norbornene compounds, polymethyl methacrylate , Polyethyl methacrylate, polypropylyl methacrylate, polybutyl methacrylate Over DOO, acrylic resins such as polymethyl acrylate, and copolymer of acrylic resin and other resins.
- the binder resin used for the antistatic layer is preferably a thermoplastic resin having a weight average molecular weight of 400,000 or more and a glass transition temperature in the range of 80 to 110 ° C.
- the glass transition temperature can be obtained by the method described in JIS K7121.
- the binder resin used here is 60% by mass or more, more preferably 80% by mass or more of the total resin mass constituting the antistatic agent layer, and an actinic radiation curable resin or a thermosetting resin is applied as necessary. You can also
- the laminate according to the present invention is configured by laminating at least a lower transparent electrode, an organic functional layer, an upper transparent electrode, a first optical adjustment layer, and a second optical adjustment layer in this order on a support substrate.
- the upper transparent electrode and the lower transparent electrode according to the present invention function as an anode or a cathode.
- the upper transparent electrode functions as a cathode
- the lower transparent electrode functions as an anode.
- the transparency in an upper transparent electrode and a lower transparent electrode means that the light transmittance in wavelength 550nm is 50% or more.
- the upper transparent electrode is preferably a thin film metal, and both the upper transparent electrode and the lower transparent electrode are more preferably a thin film metal.
- an electrode material made of a metal, an alloy, an electrically conductive compound or a mixture thereof having a high work function (4 eV or more, preferably 4.5 eV or more) is preferably used.
- electrode materials include metals such as Au and Ag, indium tin oxide (ITO), SnO 2 , ZnO, GZO (Ga doped ZnO), AZO (Al doped ZnO), and antimony doped zinc oxide.
- conductive transparent materials such as ATO (Sb-doped SnO), IZO (In 2 O 3 —ZnO), and IGZO (indium gallium zinc oxide).
- a thin film may be formed by depositing these electrode materials by a method such as vapor deposition or sputtering, and a pattern having a desired shape may be formed by photolithography, or when the pattern accuracy is not so high (about 100 ⁇ m or more) ), A pattern may be formed through a mask having a desired shape when the electrode material is deposited or sputtered. Or when using the substance which can be apply
- the film thickness of the anode depends on the material, it is usually selected within the range of 10 nm to 1 ⁇ m, preferably 10 to 200 nm.
- the anode is preferably a metal oxide from the viewpoint of improving light transmittance.
- a metal oxide is not particularly limited.
- ITO indium tin oxide
- Examples include zinc oxide, ATO (Sb-doped SnO), IZO (In 2 O 3 —ZnO), and IGZO (indium gallium zinc oxide).
- cathode As the cathode, a material having a low work function (4 eV or less) metal (referred to as an electron injecting metal), an alloy, an electrically conductive compound, and a mixture thereof as an electrode material is used.
- electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, aluminum, rare earth metals and the like.
- a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this for example, a magnesium / silver mixture, Magnesium / aluminum mixtures, magnesium / indium mixtures, aluminum / aluminum oxide (Al 2 O 3 ) mixtures, lithium / aluminum mixtures, aluminum and the like are preferred.
- the cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the cathode is preferably several hundred ⁇ / ⁇ or less.
- the film thickness is usually selected within the range of 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
- a transparent or translucent cathode can be produced by producing a conductive transparent material mentioned in the description of the anode on the cathode after producing the above metal with a thickness of 1 to 20 nm.
- the cathode is preferably provided with a thin metal that can be deposited from the viewpoint of not damaging the organic functional layer.
- silver is preferable because of its high transmittance per unit film thickness.
- the cathode may be composed of silver alone or may be composed of an alloy containing silver. Examples of such alloys include silver / magnesium (Ag / Mg), silver / copper (Ag / Cu), silver / palladium (Ag / Pd), silver / palladium / copper (Ag / Pd / Cu), silver -Indium (Ag.In) etc. are mentioned.
- Such a cathode may have a structure in which a layer made of silver (or an alloy containing silver) is divided into a plurality of layers as needed.
- the cathode composed of silver (or an alloy containing silver) preferably has a thickness in the range of 5 to 15 nm.
- a film thickness of less than 15 nm is more preferable because the absorption component or reflection component of the layer is reduced and the transmittance of the transparent electrode is improved. Further, it is preferable that the film thickness is larger than 5 nm because the conductivity of the layer becomes sufficient.
- silver when silver is used as the cathode material, it is preferable to provide a layer such as Al, Ca, or Li between the silver electrode and the electron injection layer in order to reduce the driving voltage.
- a layer such as Al, Ca, or Li between the silver electrode and the electron injection layer in order to reduce the driving voltage.
- Ca and Li are more preferable from the viewpoint of improving light transmittance.
- Organic functional layer Typical configurations of the organic functional layer according to the present invention include the following configurations, but are not limited thereto.
- the configuration of (7) is preferable but not particularly limited.
- the light emitting layer according to the present invention may be composed of a plurality of layers.
- a non-light emitting intermediate layer may be provided between the light emitting layers.
- the light emitting layer according to the present invention is a layer that emits light by recombination of electrons and holes injected from the electrode or the electron transport layer and the hole transport layer.
- the total thickness of the light emitting layer is not particularly limited, but from the viewpoint of the uniformity of the film, preventing unnecessary high voltage from being applied during light emission, and improving the stability of the emitted color against the drive current.
- the thickness is preferably adjusted in the range of 2 nm to 5 ⁇ m, more preferably in the range of 2 to 200 nm, and particularly preferably in the range of 5 to 100 nm.
- the thickness of each light emitting layer is preferably adjusted within the range of 2 nm to 1 ⁇ m, more preferably adjusted within the range of 2 to 200 nm, and further preferably adjusted within the range of 3 to 150 nm.
- the light emitting layer preferably contains a light emitting dopant (a light emitting dopant compound, a dopant compound, also simply referred to as a dopant) and a host compound (a matrix material, a light emitting host compound, also simply referred to as a host).
- a light emitting dopant a light emitting dopant compound, a dopant compound, also simply referred to as a dopant
- a host compound a matrix material, a light emitting host compound, also simply referred to as a host.
- Luminescent dopant As the luminescent dopant, a fluorescent luminescent dopant (also referred to as a fluorescent dopant or a fluorescent compound) and a phosphorescent dopant (also referred to as a phosphorescent dopant or a phosphorescent compound) are preferably used. In the present invention, it is preferable that at least one light emitting layer contains a phosphorescent light emitting dopant.
- the concentration of the light-emitting dopant in the light-emitting layer can be arbitrarily determined based on the specific dopant used and the requirements of the device, and is contained at a uniform concentration in the film thickness direction of the light-emitting layer. It may also have an arbitrary concentration distribution.
- the luminescent dopant which concerns on this invention may be used in combination of multiple types, and may use it combining the dopants from which a structure differs, and combining the fluorescent luminescent dopant and a phosphorescent luminescent dopant. Thereby, arbitrary luminescent colors can be obtained.
- the phosphorescent dopant according to the present invention is a compound in which light emission from an excited triplet is observed, specifically, a compound that emits phosphorescence at room temperature (25 ° C.), and a phosphorescence quantum yield. Is defined as a compound of 0.01 or more at 25 ° C., but a preferable phosphorescence quantum yield is 0.1 or more.
- the phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, the phosphorescence emitting dopant according to the present invention achieves the above phosphorescence quantum yield (0.01 or more) in any solvent. It only has to be done.
- phosphorescent dopants There are two types of light emission principles of phosphorescent dopants. One is the recombination of carriers on the host compound to which carriers are transported to generate an excited state of the host compound, and this energy is phosphorescent. It is an energy transfer type in which light emission from a phosphorescent dopant is obtained by transferring to a dopant. The other is a carrier trap type in which a phosphorescent dopant becomes a carrier trap, and recombination of carriers occurs on the phosphorescent dopant to emit light from the phosphorescent dopant. In any case, it is a condition that the excited state energy of the phosphorescent dopant is lower than the excited state energy of the host compound.
- the phosphorescent dopant that can be used in the present invention can be appropriately selected from known ones used in the light emitting layer of the organic EL device.
- phosphorescent dopants that can be used in the present invention include compounds described in the following documents. For example, Nature 395, 151 (1998), Appl. Phys. Lett. 78, 1622 (2001), Adv. Mater. 19, 739 (2007), Chem. Mater. 17, 3532 (2005), Adv. Mater. 17, 1059 (2005), International Publication No. 2009/100991, International Publication No. 2008/101842, International Publication No. 2003/040257, US Patent Application Publication No. 2006/835469, US Patent Application Publication No. 2006 /. No. 0202194, U.S. Patent Application Publication No. 2007/0087321, U.S. Patent Application Publication No. 2005/0244673, Inorg. Chem.
- examples of the phosphorescent dopant include an organometallic complex having Ir as a central metal. More preferably, a complex containing at least one coordination mode of metal-carbon bond, metal-nitrogen bond, metal-oxygen bond, and metal-sulfur bond is preferable.
- Fluorescent dopant A fluorescence emitting dopant (hereinafter also referred to as a fluorescence dopant) will be described.
- the fluorescent dopant is a compound that can emit light from an excited singlet, and is not particularly limited as long as light emission from the excited singlet is observed.
- Examples of the fluorescent dopant include anthracene derivatives, pyrene derivatives, chrysene derivatives, fluoranthene derivatives, perylene derivatives, fluorene derivatives, arylacetylene derivatives, styrylarylene derivatives, styrylamine derivatives, arylamine derivatives, boron complexes, coumarin derivatives, pyran derivatives, Examples include cyanine derivatives, croconium derivatives, squalium derivatives, oxobenzanthracene derivatives, fluorescein derivatives, rhodamine derivatives, pyrylium derivatives, perylene derivatives, polythiophene derivatives, and rare earth complex compounds.
- luminescent dopant using delayed fluorescence include, for example, compounds described in International Publication No. 2011/156793, Japanese Patent Application Laid-Open No. 2011-213643, Japanese Patent Application Laid-Open No. 2010-93181, and the like. Is not limited to these.
- the host compound according to the present invention is a compound mainly responsible for charge injection and transport in the light-emitting layer, and light emission itself is not substantially observed in the organic EL element.
- it is a compound having a phosphorescence quantum yield of phosphorescence of less than 0.1 at room temperature (25 ° C.), more preferably a compound having a phosphorescence quantum yield of less than 0.01.
- the mass ratio in the layer is 20% or more among the compounds contained in a light emitting layer.
- the excited state energy of the host compound is preferably higher than the excited state energy of the phosphorescent dopant contained in the same layer.
- a host compound may be used independently or may be used in combination of multiple types. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient.
- the host compound that can be used in the present invention is not particularly limited, and compounds conventionally used in organic EL devices can be used. It may be a low molecular compound or a high molecular compound having a repeating unit, or a compound having a reactive group such as a vinyl group or an epoxy group.
- Tg glass transition temperature
- the hole transport layer in the present invention is made of a material having a function of transporting holes, and may have a function of transmitting holes injected from the anode to the light emitting layer.
- the total thickness of the hole transport layer is not particularly limited, but is usually in the range of 5 nm to 5 ⁇ m, more preferably in the range of 2 to 500 nm, and still more preferably in the range of 5 to 200 nm.
- any material that has either a hole injection property or a transport property or an electron barrier property may be used. Any one can be selected and used.
- Examples of the triarylamine derivative include a benzidine type typified by ⁇ -NPD, a starburst type typified by MTDATA, and a compound having fluorene or anthracene in the triarylamine linking core part.
- hexaazatriphenylene derivatives such as those described in JP-T-2003-519432 and JP-A-2006-135145 can also be used as hole transport materials.
- a hole transport layer having a high p property doped with impurities can also be used. Examples thereof include JP-A-4-297076, JP-A-2000-196140, JP-A-2001-102175, J. Pat. Appl. Phys.
- the above-mentioned materials can be used as the hole transport material, a triarylamine derivative, a carbazole derivative, an indolocarbazole derivative, an azatriphenylene derivative, an organometallic complex, or an aromatic amine is introduced into the main chain or side chain.
- the polymer materials or oligomers used are preferably used.
- the hole transport material may be used alone or in combination of two or more.
- the electron blocking layer is a layer having a function of a hole transport layer in a broad sense, and is preferably made of a material having a function of transporting holes and a small ability to transport electrons, while transporting holes. By blocking electrons, the probability of recombination of electrons and holes can be improved. Moreover, the structure of the positive hole transport layer mentioned above can be used as an electron blocking layer as needed.
- the electron blocking layer is preferably provided adjacent to the anode side of the light emitting layer.
- the thickness of the electron blocking layer is preferably in the range of 3 to 100 nm, and more preferably in the range of 5 to 30 nm.
- the material used for the electron blocking layer the material used for the above-described hole transport layer is preferably used, and the material used as the above-described host compound is also preferably used for the electron blocking layer.
- the hole injection layer (also referred to as an anode buffer layer) is a layer provided between the anode and the light emitting layer for the purpose of lowering the driving voltage and improving the light emission luminance. (November 30, 1998, issued by NTS Corporation) ”, Volume 2, Chapter 2,“ Electrode Materials ”(pages 123 to 166).
- the hole injection layer may be provided as necessary, and may be present between the anode and the light emitting layer or between the anode and the hole transport layer as described above. The details of the hole injection layer are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069, etc.
- Examples of materials used for the hole injection layer include: Examples thereof include materials used for the hole transport layer described above. Among them, phthalocyanine derivatives represented by copper phthalocyanine, hexaazatriphenylene derivatives as described in JP-T-2003-519432, JP-A-2006-135145, etc., metal oxides represented by vanadium oxide, amorphous Conductive polymers such as carbon, polyaniline (emeraldine) and polythiophene, orthometalated complexes represented by tris (2-phenylpyridine) iridium complex, and triarylamine derivatives are preferred.
- the materials used for the hole injection layer described above may be used alone or in combination of two or more.
- the electron transport layer is made of a material having a function of transporting electrons, and may have a function of transmitting electrons injected from the cathode to the light emitting layer.
- the total thickness of the electron transport layer of the present invention is not particularly limited, but is usually in the range of 2 nm to 5 ⁇ m, more preferably in the range of 2 to 500 nm, and still more preferably in the range of 5 to 200 nm. is there.
- the electron mobility of the electron transport layer is 1 ⁇ 10 ⁇ 5 cm 2 / Vs or more. Is preferred.
- the material used for the electron transport layer may have any of an electron injecting property, a transporting property, and a hole blocking property. Any one can be selected and used.
- nitrogen-containing aromatic heterocyclic derivatives (carbazole derivatives, azacarbazole derivatives (one or more carbon atoms constituting the carbazole ring are substituted with nitrogen atoms), pyridine derivatives, pyrimidine derivatives, pyrazine derivatives, pyridazine derivatives, Triazine derivatives, quinoline derivatives, quinoxaline derivatives, phenanthroline derivatives, azatriphenylene derivatives, oxazole derivatives, thiazole derivatives, oxadiazole derivatives, thiadiazole derivatives, triazole derivatives, benzimidazole derivatives, benzoxazole derivatives, benzthiazole derivatives, etc.), dibenzofuran derivatives, And dibenzothiophene
- a metal complex having a quinolinol skeleton or a dibenzoquinolinol skeleton as a ligand such as tris (8-quinolinol) aluminum (Alq 3 ), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7 -Dibromo-8-quinolinol) aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), etc.
- a metal complex in which the central metal is replaced with In, Mg, Cu, Ca, Sn, Ga, or Pb can also be used as an electron transporting material.
- metal-free or metal phthalocyanine or those in which the terminal thereof is substituted with an alkyl group or a sulfonic acid group can be preferably used as the electron transport material.
- distyrylpyrazine derivatives that are also used as a material for the light-emitting layer can be used as an electron transport material, and n-type-Si, n-type-SiC, etc. as well as a hole injection layer and a hole transport layer.
- These inorganic semiconductors can also be used as an electron transport material.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- the electron transport layer may be doped with a doping material as a guest material to form an electron transport layer having a high n property (electron rich).
- the doping material include n-type dopants such as metal complexes and metal compounds such as metal halides.
- Specific examples of the electron transport layer having such a structure include, for example, JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J. Pat. Appl. Phys. , 95, 5773 (2004) and the like.
- the metal fluoride is doped from the viewpoint of lowering the driving voltage.
- More preferable electron transport materials include pyridine derivatives, pyrimidine derivatives, pyrazine derivatives, triazine derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, carbazole derivatives, azacarbazole derivatives, and benzimidazole derivatives.
- the electron transport material may be used alone or in combination of two or more.
- the hole blocking layer is a layer having the function of an electron transport layer in a broad sense, and is preferably made of a material having a function of transporting electrons and a small ability to transport holes. By blocking the holes, the probability of recombination of electrons and holes can be improved. Moreover, the structure of the electron carrying layer mentioned above can be used as a hole-blocking layer as needed.
- the hole blocking layer is preferably provided adjacent to the cathode side of the light emitting layer.
- the thickness of the hole blocking layer is preferably in the range of 3 to 100 nm, and more preferably in the range of 5 to 30 nm.
- the material used for the hole blocking layer As the material used for the hole blocking layer, the material used for the above-described electron transport layer is preferably used, and the material used as the above-described host compound is also preferably used for the hole blocking layer.
- An electron injection layer (also referred to as a cathode buffer layer) is a layer provided between a cathode and a light emitting layer in order to reduce drive voltage or improve light emission luminance.
- the details are described in the second volume, Chapter 2, “Electrode Materials” (pages 123 to 166) of “November 30, 1999, issued by NTS Corporation”.
- the electron injection layer may be provided as necessary, and may be present between the cathode and the light emitting layer or between the cathode and the electron transport layer as described above.
- the electron injection layer is preferably a very thin film, and its thickness is preferably in the range of 0.1 to 5 nm, although it depends on the material. Moreover, the nonuniform film
- JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like Specific examples of materials preferably used for the electron injection layer are as follows. , Metals typified by strontium and aluminum, alkali metal compounds typified by lithium fluoride, sodium fluoride, potassium fluoride, etc., alkaline earth metal compounds typified by magnesium fluoride, calcium fluoride, etc., oxidation Examples thereof include metal oxides typified by aluminum, metal complexes typified by lithium 8-hydroxyquinolate (Liq), and the like. Further, the above-described electron transport material can also be used.
- the materials used for the electron injection layer may be used alone or in combination of two or more.
- the organic functional layer in the present invention described above may further contain other additives.
- the additive include halogen elements and halogenated compounds such as bromine, iodine and chlorine, alkali metals and alkaline earth metals such as Pd, Ca and Na, transition metal compounds, complexes and salts.
- the addition amount of the additive can be arbitrarily determined, but is preferably 1000 ppm or less, more preferably 500 ppm or less, still more preferably 50 ppm or less with respect to the total mass% of the layer to be added. . However, it is not within this range depending on the purpose of improving the transportability of electrons and holes or the purpose of favoring the exciton energy transfer.
- a method for forming an organic functional layer (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) according to the present invention will be described.
- an organic functional layer hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.
- the formation method by a conventionally well-known method, such as a vacuum evaporation method and a wet method (it is also called a wet process) etc., can be used.
- wet method examples include spin coating method, casting method, ink jet method, printing method, die coating method, blade coating method, roll coating method, spray coating method, curtain coating method, and LB method (Langmuir-Blodgett method). From the viewpoint of obtaining a homogeneous thin film easily and high productivity, a method with high roll-to-roll method suitability such as a die coating method, a roll coating method, an ink jet method and a spray coating method is preferable.
- liquid medium for dissolving or dispersing the organic functional layer material examples include ketones such as methyl ethyl ketone and cyclohexanone, fatty acid esters such as ethyl acetate, halogenated hydrocarbons such as dichlorobenzene, toluene, xylene, mesitylene, and cyclohexylbenzene.
- Aromatic hydrocarbons such as cyclohexane, decalin and dodecane, and organic solvents such as DMF and DMSO can be used.
- a dispersion method it can disperse
- the vapor deposition conditions vary depending on the type of compound used, but generally the boat heating temperature is 50 to 450 ° C., the degree of vacuum is 1 ⁇ 10 ⁇ 6 to 1 ⁇ 10 ⁇ 2 Pa, and the vapor deposition rate. It is desirable to select appropriately within a range of 0.01 to 50 nm / second, a substrate temperature of ⁇ 50 to 300 ° C., and a thickness of 0.1 nm to 5 ⁇ m, preferably 5 to 200 nm. It is preferable that the organic functional layer is formed from the hole injection layer to the cathode consistently by a single evacuation, but it may be taken out halfway and subjected to different film forming methods. In that case, it is preferable to perform the work in a dry inert gas atmosphere.
- the organic EL device of the present invention is characterized in that the refractive index of the first optical adjustment layer is larger than the refractive index of the second optical adjustment layer from the viewpoint of increasing the light transmittance.
- the effect of the present invention can be obtained if the refractive index of the first optical adjustment layer is larger than the refractive index of the second optical adjustment layer, but preferably the refractive index difference is 0.3 or more, more preferably 0.6 or more. Most preferably, it is 0.9 or more.
- the refractive index is a refractive index value measured at 23 ° C. and 55% RH in a wavelength of 550 nm. The refractive index can be determined by measurement using a commercially available ellipsometer.
- the first optical adjustment layer preferably has a high refractive index from the viewpoint of increasing the light transmittance.
- the refractive index of the first optical adjustment layer is preferably 1.6 or more, more preferably 2.0 or more, and most preferably 2.3 or more.
- the second optical adjustment layer preferably has a low refractive index from the viewpoint of increasing the light transmittance.
- the refractive index of the second optical adjustment layer is preferably 1.7 or less, more preferably 1.6 or less, and most preferably 1.4 or less.
- the material of the first optical adjustment layer and the second optical adjustment layer is not particularly limited as long as an appropriate refractive index satisfying the above refractive index relationship is obtained, and an existing compound can be used.
- a compound capable of being vacuum-deposited is preferable because it can be formed on the upper transparent electrode of the organic EL element without damage.
- a compound that can be heated and evaporated by EB (electron gun) is preferable.
- the material used for an organic EL element can also be used.
- the film formation ranges of the first optical adjustment layer and the second optical adjustment layer are preferably narrower than those of a sealing substrate and a sealing film, which will be described later, from the viewpoint of storage stability of the organic EL element.
- Al 2 O 3 reffractive index 1.6
- CeO 3 reffractive index 2.2
- Ga 2 O 3 reffractive index 1.5
- HfO 2 reffractive index 2.0
- ITO indium tin oxide, refractive index 2.1
- indium zinc oxide refractive index 2.1
- MgO reffractive index 1.7
- Nb 2 O 5 refractive index 2.3
- SiO 2 refractive index 1.5
- Ta 2 O 5 Refractive index 2.2
- TiO 2 refractive index 2.3 to 2.5
- Y 2 O 3 Refractive index 1.9
- ZnO refractive index 2.1
- ZrO 2 Refractive index 2.1
- AlF 3 reffractive index 1.4
- CaF 2 reffractive index 1.2 to 1.4
- CeF 3 reffractive index 1.6
- GdF 3 reffractive index 1.6
- LaF 3 reffractive index 1.59
- LiF LiF
- the second optical adjustment layer is preferably a metal fluoride from the viewpoint that the light transmittance after storage is hardly changed.
- the first optical adjustment layer is preferably a sulfur-containing compound or a nitrogen-containing compound from the viewpoint that the light transmittance after storage hardly changes.
- nitrogen-containing compounds examples include hexanediamine, isocyanate, polyamide, polyurethane, an aromatic heterocyclic compound containing a nitrogen atom having an unshared electron pair not involved in aromaticity, and a low molecular organic compound containing a nitrogen atom.
- an aromatic heterocyclic compound containing a nitrogen atom having an unshared electron pair not involved in aromaticity is preferable.
- the low molecular organic compound containing a nitrogen atom a compound having a melting point of 80 ° C. or higher and a molecular weight M in the range of 150 to 1200 is preferable.
- the low molecular organic compound containing a nitrogen atom preferably has a larger interaction with silver or the like, and examples thereof include a nitrogen-containing heterocyclic compound and a phenyl group-substituted amine compound.
- n of [effective unshared electron pairs] with respect to the molecular weight M of the organic compound containing nitrogen atoms is defined as the effective unshared electron pair content [n / M]
- the effective unshared electron pair content [n / M] is a compound selected to satisfy 2.0 ⁇ 10 ⁇ 3 ⁇ [n / M], and 3.9 ⁇ 10 ⁇ 3 ⁇ [n / M]. Further preferred.
- Effective unshared electron pair refers to an unshared electron pair that does not participate in aromaticity and is not coordinated to a metal among the unshared electron pairs of the nitrogen atom contained in the compound. Suppose that there is.
- the aromaticity here refers to an unsaturated cyclic structure in which atoms having ⁇ electrons are arranged in a ring, and is aromatic according to the so-called “Hückel rule”, and includes the electrons contained in the ⁇ electron system on the ring.
- [Effective unshared electron pair] as described above refers to an unshared electron pair possessed by a nitrogen atom regardless of whether or not the nitrogen atom itself provided with the unshared electron pair is a hetero atom constituting an aromatic ring. Is selected depending on whether or not is involved in aromaticity. For example, even if a nitrogen atom is a heteroatom constituting an aromatic ring, if the nitrogen atom has an unshared electron pair that does not participate in aromaticity, the unshared electron pair is [effective unshared electron. It is counted as one of the pair.
- the organic compound having a nitrogen atom is composed of a plurality of compounds, for example, based on the mixing ratio of the compounds, the molecular weight M of the mixed compound obtained by mixing these compounds is obtained, and the molecular weight M with respect to the molecular weight M is determined.
- the total number n of [effective unshared electron pairs] is determined as an average value of the effective unshared electron pair content [n / M], and this value is preferably within the predetermined range described above.
- Table 1 shows the number (n), molecular weight (M), and effective unshared electron pair content (n / M) of [effective unshared electron pairs] for 43.
- the first optical adjustment layer according to the present invention preferably contains a compound containing a sulfur atom (a sulfur-containing compound).
- Organic compounds containing sulfur atoms may have a sulfide bond (also referred to as a thioether bond), a disulfide bond, a mercapto group, a sulfone group, a thiocarbonyl bond, etc. in the molecule. It is preferably a group.
- sulfur-containing compounds represented by the following general formulas (1) to (4) can be given.
- R 1 and R 2 each independently represent a substituent.
- Examples of the substituent represented by R 1 and R 2 include an alkyl group (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group).
- alkyl group for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group, tridecyl group.
- Aromatic hydrocarbon group also called aromatic carbocyclic group, aryl group, etc., for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, acenaphthenyl group, fluorenyl group Phenanthryl group, indenyl group, pyrenyl group, biphenylyl group, etc.), aromatic Heterocyclic groups (for example, furyl, thienyl, pyridyl, pyrid
- R 3 and R 4 each independently represent a substituent.
- Examples of the substituent represented by R 3 and R 4 include the same substituents as R 1 and R 2 .
- R 5 represents a substituent.
- Examples of the substituent represented by R 5 include the same substituents as R 1 and R 2 .
- R 6 represents a substituent.
- Examples of the substituent represented by R 6 include the same substituents as R 1 and R 2 .
- the thicknesses of the first optical adjustment layer and the second optical adjustment layer can be adjusted as appropriate.
- the thickness of the first optical adjustment layer is preferably in the range of 10 to 500 nm.
- the range of 20 to 250 nm is more preferable, and the range of 30 to 150 nm is most preferable.
- the thickness of the second optical adjustment layer is preferably within the range of 10 to 500 nm, more preferably within the range of 20 to 400 nm, and most preferably within the range of 50 to 200 nm.
- Examples of the sealing means used for sealing the organic EL element of the present invention include a method of bonding a sealing substrate, an electrode, and a support substrate with an adhesive.
- the sealing substrate may be disposed so as to cover the display area of the organic EL element, and may be a concave plate shape or a flat plate shape.
- electrical insulation is not particularly limited.
- the same material as that used for the above-described support substrate can be used.
- the sealing substrate is preferably provided with a gas barrier layer similarly to the support substrate. Further, an antistatic layer may be provided on the sealing substrate.
- a polymer film can be preferably used because the organic EL element can be thinned.
- the polymer film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 ⁇ 10 ⁇ 3 ml / (m 2 ⁇ 24 h ⁇ atm) or less, and a method according to JIS K 7129-1992.
- the measured water vapor permeability (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)%) is preferably 1 ⁇ 10 ⁇ 3 g / (m 2 ⁇ 24 h) or less.
- the adhesive include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing adhesives such as 2-cyanoacrylates. be able to.
- hot-melt type polyamide, polyester, and polyolefin can be mentioned.
- a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
- an organic EL element may deteriorate with heat processing, what can be adhesively cured from room temperature (25 degreeC) to 80 degreeC is preferable. Further, a desiccant may be dispersed in the adhesive.
- coating of the adhesive agent to a sealing substrate may use a commercially available dispenser, and may print it like screen printing.
- the electrode and the organic functional layer are coated on the outside of the electrode facing the support substrate with the organic functional layer interposed therebetween, and an inorganic or organic layer is formed in contact with the support substrate to form a sealing film.
- the material for forming the film may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
- silicon oxide, silicon dioxide, silicon nitride, or the like may be used. it can.
- a smaller refractive index difference between the sealing film and the adhesive is preferable in terms of increasing the transmittance.
- a laminated structure of these inorganic layers and layers made of organic materials it is preferable to have a laminated structure of these inorganic layers and layers made of organic materials.
- the method of forming these films There are no particular limitations on the method of forming these films. For example, vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
- the organic EL element of the present invention can be used as a display device, a display, and various light emission sources.
- lighting devices home lighting, interior lighting
- clock and liquid crystal backlights billboard advertisements, traffic lights, light sources of optical storage media, light sources of electrophotographic copying machines, light sources of optical communication processors, light
- the light source of a sensor etc. it is not limited to this, Especially, it can use effectively for the use as a backlight of a liquid crystal display device, and a light source for illumination.
- antistatic layer (organic antistatic agent 1)
- a colloidal silica-containing monomer (A) is prepared, and this colloidal silica-containing monomer (A) is used to form an organic
- An antistatic hard coat agent (A) which is an antistatic agent was prepared. And the antistatic layer was formed using this organic antistatic agent.
- colloidal silica-containing monomer (A) To 130 parts by mass of colloidal silica (SiO 2 component 30% by mass, average particle size 20 nm, manufactured by Nissan Chemical Co., Ltd.) dispersed using ethyl acetate as a solvent, 2-methacryloyloxyethyl isocyanate (MOI) (molecular weight 155, 30 parts by mass of Showa Denko KK) and 0.1 parts by mass of di-n-butyltin dilaurate (DBTDL) as a catalyst were added and stirred at room temperature (25 ° C.) for 24 hours. The reaction of the isocyanate group was confirmed by infrared spectroscopy, and ethyl acetate as a solvent was removed with an evaporator to obtain a colloidal silica-containing monomer (A).
- MOI 2-methacryloyloxyethyl isocyanate
- DBTDL di-n-butyltin dilaurate
- antistatic hard coat agent (A) To 100 parts by mass of the colloidal silica-containing monomer (A) produced above (non-volatile content: 36% by mass), a methyl ethyl ketone solution of Li + / CF 3 SO 3 — (non-volatile content: 50% by mass, Sanko Chemical Industries ( 5 parts by mass of the product) were mixed and stirred. As an initiator, 1 part by mass of Irgacure 907 (manufactured by BASF Japan) was added to prepare an antistatic hard coat agent (A) which is an organic antistatic agent.
- Irgacure 907 manufactured by BASF Japan
- the prepared antistatic hard coat agent (A), which is an organic antistatic agent, was applied and dried on the support substrate under the condition that the thickness after curing was 10 ⁇ m. Thereafter, using an 80 W / cm mercury lamp, ultraviolet irradiation treatment was performed under the condition of 300 mJ to form an antistatic layer made of an organic antistatic agent.
- Non-catalytic perhydropolysilazane 20% by weight dibutyl ether solution (Aquamica NN120-20, manufactured by AZ Electronic Materials) and amine catalyst (N, N, N ′, N′-tetramethyl-1,6-diaminohexane) ) Is mixed with a 20% by weight dibutyl ether solution (Aquamica NAX120-20, manufactured by AZ Electronic Materials) containing 5% by weight of the solid content in a ratio of 4: 1, and the thickness is further adjusted. Therefore, it was diluted appropriately with dibutyl ether to prepare a coating solution.
- the coating solution prepared on the underlayer was applied with a die coater so that the thickness after drying was 100 nm, and dried at 80 ° C. for 2 minutes.
- the coating film after drying was subjected to a modification treatment to irradiate 2.5 mJ / cm 2 of vacuum ultraviolet radiation.
- a silicon-containing polymer modified layer was formed.
- substitution with nitrogen was performed so that an atmosphere with an oxygen concentration of 0.1% by volume was obtained.
- the temperature of the stage on which the PET film was placed was 80 ° C., and the stage conveyance speed was 0.5 m / min.
- the vacuum ultraviolet irradiation apparatus 100 shown in FIG. 5 carries the resin film (support substrate) 2 on the stage 104 and conveys the inside of the chamber 102.
- the stage 104 includes a heater and can heat the resin film 2.
- the chamber 102 is divided into three zones in the transport direction V of the resin film 2 by a shielding plate 106, and a plurality of Xe excimer lamps 108 are installed in the central zone.
- the Xe excimer lamp 108 is supported by a holder 110 containing a power source and is controlled to be lit.
- a silicon compound layer having a thickness of 300 nm was formed by a plasma CVD method to obtain a support substrate with a gas barrier layer.
- the film forming conditions for the silicon compound layer are as follows.
- Feed rate of raw material gas (hexamethyldisiloxane: HMDSO): 50 sccm (Standard Cubic Centimeter per Minute)
- Supply amount of oxygen gas (O 2 ): 500 sccm Degree of vacuum in the vacuum chamber: 3Pa
- Applied power from the power source for plasma generation 1.2 kW
- Frequency of power source for plasma generation 80 kHz
- Film transport speed 0.5 m / min
- the silicon-containing polymer modified layer was applied with a film thickness of 300 nm and UV-cured in the same manner as described above.
- Anode (lower transparent electrode) A target of In 2 O 3 : ZnO (90% by mass: 10% by mass) is attached to a commercially available sputtering apparatus, and consists of IZO having a thickness of 250 nm under the following conditions. An anode was formed.
- Each of the vapor deposition crucibles in the vacuum vapor deposition apparatus was filled with the constituent material of each layer in an amount optimal for device fabrication.
- a crucible made of a resistance heating material made of molybdenum or tungsten was used as the evaporation crucible.
- the deposition crucible containing the following compound M-2 was energized and heated, and deposited on the anode at a deposition rate of 0.1 nm / sec. A hole injection transport layer was formed.
- the following compound BD-1 and the following compound H-1 were co-deposited at a deposition rate of 0.1 nm / second so that the concentration of the compound BD-1 was 5% by mass, and a fluorescence exhibiting blue light emission with a thickness of 15 nm. A light emitting layer was formed.
- the following compound GD-1, the following compound RD-1 and the following compound H-2 were deposited at a deposition rate of 0.1% so that the compound GD-1 had a concentration of 17% by mass and the compound RD-1 had a concentration of 0.8% by mass.
- Co-evaporation was performed at 1 nm / second to form a phosphorescent light emitting layer having a thickness of 15 nm and exhibiting a yellow color.
- cathode (upper transparent electrode) Subsequently, 8 nm of silver was deposited at a deposition rate of 0.3 nm / second to form a cathode.
- optical adjustment layer Formation of optical adjustment layer Subsequently, anthracene was deposited at a rate of 0.1 nm / second to form an optical adjustment layer (referred to as a first optical adjustment layer) having a thickness of 45 nm.
- Adhesive Composition 100 parts by mass of “Opanol B50 (manufactured by BASF, Mw: 340,000)” as polyisobutylene resin (A), “Nisseki” as polybutene resin (B) 30 parts by weight of polybutene grade HV-1900 (manufactured by Nippon Oil Corporation, Mw: 1900), “TINUVIN 765 (manufactured by BASF Japan, having tertiary hindered amine groups)” as a hindered amine light stabilizer (C) ”0.5 0.5 parts by mass of “IRGANOX 1010 (manufactured by BASF Japan, both ⁇ -positions of hindered phenol groups have tertiary butyl groups)” as a hindered phenol-based antioxidant (D), and cyclic olefin As the polymer (E), “Eastotac H-100L Resin (Eastman Chemical Co. ) "50 parts by weight
- sealing substrate The support substrate with a gas barrier prepared above was prepared, and this was used as a sealing substrate as it was. Next, the prepared solution of the adhesive composition is applied to the surface on the cathode side (gas barrier layer side) of the sealing substrate so that the thickness of the adhesive layer formed after drying is 20 ⁇ m. An adhesive layer was formed by drying at 2 ° C. for 2 minutes. Next, as a release sheet, a release treatment surface of a polyethylene terephthalate film subjected to a release treatment with a thickness of 38 ⁇ m was attached to the formed adhesive layer surface to produce a sealing substrate.
- the sealing substrate produced by the above method was left for 24 hours or more in a nitrogen atmosphere. After leaving, the release sheet was removed, and lamination was performed so as to cover the cathode of the organic light emitting device with a vacuum laminator heated to 80 ° C. Furthermore, it heated and sealed at 120 degreeC for 30 minutes, and the organic EL element 101 was produced.
- the organic EL element 102 was produced in the same manner except that the (first) optical adjustment layer and the second optical adjustment layer were formed as follows.
- magnesium fluoride (MgF 2 ) set in a crucible for electron gun deposition was deposited using an electron gun to form a first optical adjustment layer.
- the deposition rate was about 1 nm / sec.
- Second optical adjustment layer On the first optical adjustment layer, anthracene was deposited at a rate of 0.1 nm / second to form a second optical adjustment layer having a thickness of 45 nm.
- MoO 3 Heat deposition was performed at a deposition rate of about 0.2 nm / sec.
- Nb 2 O 5 Evaporated at an evaporation rate of about 1 nm / sec using an electron gun.
- TiO 2 Evaporation was performed at an evaporation rate of about 1 nm / sec using an electron gun.
- CaF 2 Vapor was deposited using an electron gun at a deposition rate of about 1 nm / sec.
- MgF 2 Vapor was deposited using an electron gun at a deposition rate of about 1 nm / sec.
- NaF Heat deposition was performed at a deposition rate of about 0.2 nm / sec.
- Organic compound A heat-deposited at a deposition rate of about 0.1 nm / sec.
- the difference in appearance between the light emitting region and the non-light emitting region was evaluated according to the following evaluation criteria.
- a light transmittance difference (transparency difference) between the light emitting region and the non-light emitting region is not so much seen.
- Evaluation results are shown in Table 2.
- the light transmittance of the organic EL elements 102 to 111 is shown as a relative value where the light transmittance of the organic EL element 101 is 100.
- the organic EL device of the present invention has a higher light transmittance and a smaller visual difference between the light emitting region and the non-light emitting region than the organic EL device of the comparative example. It was done. From the above, the refractive index of the first optical adjustment layer is larger than the refractive index of the second optical adjustment layer, and the upper transparent electrode, the first optical adjustment layer, and the first optical adjustment layer and the second optical adjustment layer are directly Provided in contact with the organic EL device has a high light transmittance and a small visual difference between the light emitting region and the non-light emitting region (small difference in light transmittance between the light emitting region and the non-light emitting region). It can be seen that it is useful for providing an element.
- Example 2 ⁇ Production of organic EL element >> ⁇ Preparation of organic EL element 201>
- an organic EL element 201 was produced in the same manner except that a sealing film was formed between the second optical adjustment layer and the adhesive as follows.
- a silicon nitride film was formed by a deposition CVD plasma CVD film forming apparatus to form a sealing film.
- the film thickness of the silicon nitride film was 300 nm.
- the silicon nitride film has an electrode provided so as to face the substrate, a high-frequency power source that supplies plasma excitation power to the electrode, a bias power source that supplies bias power to a holding member that holds the substrate,
- a film was formed by a plasma CVD film forming apparatus provided with a gas supply means for supplying a carrier gas and a source gas toward the electrode.
- Silane gas (SiH 4 ), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and hydrogen gas (H 2 ) were used as the film forming gas.
- the supply amounts of these gases were 100 sccm for silane gas, 200 sccm for ammonia gas, 500 sccm for nitrogen gas, and 500 sccm for hydrogen gas.
- the film forming pressure was 50 Pa.
- the electrode was supplied with 3000 W plasma excitation power at a frequency of 13.5 MHz from a high frequency power source. Further, 500 W bias power was supplied to the holding member from a bias power source.
- the organic EL element 201 showed a smaller change rate of light transmittance before and after the storage stability test than the organic EL element 103.
- the sealing film is provided between the second optical adjustment layer and the adhesive, and the sealing film is provided in direct contact with both the second optical adjustment layer and the adhesive. It can be seen that the present invention is useful for providing an organic EL device excellent in.
- Nitrogen-containing compounds 1 to 3 Heat deposition was performed at a deposition rate of about 0.1 nm / sec.
- the organic EL elements 301 to 303 showed a smaller change rate of light transmittance before and after the storage stability test than the organic EL element 201. From the above, it can be seen that the inclusion of the nitrogen-containing compound in the first optical adjustment layer is useful for providing an organic EL device having excellent storage stability.
- Example 2 In the same manner as in Example 1 and Example 2, light transmittance and storage stability were evaluated. The evaluation results are shown in Table 5. The light transmittance of the organic EL elements 401 and 402 is shown as a relative value where the light transmittance of the organic EL element 101 is 100.
- the organic EL elements 401 and 402 have higher light transmittance than the organic EL element 302, and the light transmittance ratio between the light emitting region and the non-light emitting region is small. It was. From the above, it can be seen that providing a layer made of Li and Ca between the electron injection layer and the cathode is useful for providing an organic EL element having high light transmittance.
- the present invention can be particularly suitably used for providing an organic EL element having a high light transmittance and a small difference in light transmittance between a light emitting region and a non-light emitting region.
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Abstract
Description
照明用途の電子デバイスとしては、有機エレクトロルミネッセンス(electroluminescence:EL)素子が広く知られている。有機EL素子は、発光する化合物を含有する発光層を陽極と陰極とで挟んだ構成を有し、発光層に電子及び正孔を注入して、再結合させることにより励起子(エキシトン)を生成させ、このエキシトンが失活する際の光の放出(蛍光・リン光)を利用して発光する素子であり、数V~数十V程度の電圧で発光が可能であり、更に自己発光型であるために視野角に富み、視認性が高く、薄膜型の完全固体素子であるために省スペース、携帯性等の観点から注目されている。
前記第1光学調整層の屈折率が、前記第2光学調整層の屈折率よりも大きく、
前記上部透明電極と前記第1光学調整層、及び、前記第1光学調整層と前記第2光学調整層が、それぞれ直接接して設けられていることを特徴とする有機エレクトロルミネッセンス素子。
前記封止膜が、前記第2光学調整層及び前記接着剤の両方に直接接して設けられていることを特徴とする第1項に記載の有機エレクトロルミネッセンス素子。
本発明の有機EL素子は、支持基板上に、少なくとも、下部透明電極、発光層を含む有機機能層、上部透明電極、第1光学調整層及び第2光学調整層がこの順に積層された積層体と、発光層の発光領域を被覆するようにして支持基板と接着剤を介して貼合された封止基板とを有することを特徴とする。これにより、光透過率を高くし、かつ、発光領域と非発光領域との光透過率の差を小さくすることができる。
ここで、発光領域とは、平面視したときに、支持基板、下部透明電極、有機機能層、上部透明電極、第1光学調整層、第2光学調整層及び封止基板とが重複する領域をいい、非発光領域とは、平面視したときに、支持基板、下部透明電極、有機機能層、上部透明電極、第1光学調整層、第2光学調整層及び封止基板のうち、上部透明電極(又は下部透明電極)を除く、支持基板、下部透明電極(又は上部透明電極)、有機機能層、第1光学調整層、第2光学調整層及び封止基板のみが積層されている領域をいう。
以下、図面を用いて説明する。
積層体14は、支持基板2側から、下部透明電極4、有機機能層6、上部透明電極8、第1光学調整層10、第2光学調整層12がこの順に積層されている。
このとき、上部透明電極8と第1光学調整層10、及び、第1光学調整層10と第2光学調整層12は、それぞれ直接接して設けられている。
支持基板2及び/又は封止基板18の積層体側には、ガスバリアー層が設けられていてもよい。
図1に示す有機EL素子においては、符号Lで示される領域が発光領域、符号NLで示される領域が非発光領域となる。
封止基板18は、少なくとも、下部透明電極4、有機機能層6及び上部透明電極8が重複している発光領域を被覆するようにして設けられている。
このとき、封止膜20は、第2光学調整層12及び接着剤16の両方に直接接して設けられている。
本発明の有機EL素子に用いる支持基板は、ガラス、プラスチック等の種類には特に制限はなく、好ましくは、ガラス、石英、透明樹脂フィルムを挙げることができる。特に好ましくは、有機EL素子にフレキシブル性を与えることが可能な樹脂フィルムである。
有機EL素子は、素子内部に微量の水分や酸素が存在すると容易に性能劣化が生じてしまう。このため、支持基板を通して素子内部に水分や酸素が侵入することを防止するため、水分や酸素に対して高い遮蔽能を有するガスバリアー層を設けることが好ましい。
本発明の有機EL素子においては、支持基板の一方の面に帯電防止層を有していてもよい。帯電防止層は、帯電防止剤と、帯電防止剤を保持するためのバインダー樹脂から構成される。
有機帯電防止剤としては、共役系ポリマー及びイオン性ポリマーから選ばれる1種以上を含むことが好ましい。また、帯電防止層は、その他の導電性ポリマーや帯電防止剤を含んで構成されていてもよい。
有機帯電防止剤とは、基本的には帯電防止能を有する有機材料から構成されている。有機帯電防止剤は、帯電防止層を形成する際に、帯電防止層の裏面側のシート抵抗値を1×1011Ω/sq.以下、好ましくは1×1010Ω/sq.以下、更に好ましくは1×109Ω/sq.以下とすることができる材料である。
有機帯電防止剤としては、従来公知の界面活性剤型帯電防止剤、シリコーン系帯電防止剤、有機ホウ酸系帯電防止剤、高分子系帯電防止剤、帯電防止ポリマー材料等を挙げることができる。特に、有機帯電防止剤として、イオン導電性物質等を用いることが帯電防止層の帯電防止の観点から好ましい。イオン導電性物質は、電気伝導性を示すイオンを含有する物質である。イオン導電性物質としては、例えば、共役系ポリマーやイオン性ポリマーを挙げることができる。
共役系ポリマーとしては、下記(1)~(8)を、接続基を介して側鎖に持つポリマーのπ電子導電性ポリマー複合体等を挙げることができる。
(1)脂肪族共役系:ポリアセチレンのような炭素-炭素の共役系で交互に長く連なっているポリマーで、例えば、ポリアセチレン、ポリ(1,6-ヘプタジエン)等
(2)芳香族共役系:ポリ(パラフェニレン)のような芳香族炭化水素が長く結合する共役が発達したポリマーで、例えば、ポリパラフェニレン、ポリナフタレン、ポリアントラセン等
(3)複素環式共役系:ポリピロール、ポリチオフェンのような複素環式化合物が結合して共役系が発達したポリマーで、例えば、ポリピロールとその誘導体、ポリフランとその誘導体、ポリチオフェンとその誘導体、ポリイソチオナフテンとその誘導体、ポリセレノフェンとその誘導体等
(4)含ヘテロ原子共役系:ポリアニリンのような脂肪族又は芳香族の共役系をヘテロ原子で結合したポリマーで、ポリアニリンとその誘導体等、ポリ(パラフェニレンスルフィド)とその誘導体、ポリ(パラフェニレンオキシド)とその誘導体、ポリ(パラフェニレンセレニド)とその誘導体、また、脂肪族系では、ポリ(ビニレンスルフィド)、ポリ(ビニレンオキシド)、ポリ(ビニレンセレニド)等
(5)混合型共役系:ポリ(フェニレンビニレン)のような上記共役系の構成単位が交互に結合した構造を持つ共役系ポリマーで、例えば、ポリ(パラフェニレンビニレン)とその誘導体、ポリ(ピロールビニレン)とその誘導体、ポリ(チオフェンビニレン)とその誘導体、ポリ(フランビニレン)とその誘導体、ポリ(2,2′-チエニルピロール)とその誘導体等
(6)複鎖型共役系:分子中に複数の共役鎖を持つ共役系で、芳香族共役系に近い構造を有しているポリマーで、例えば、ポリペリナフタレン等
(7)金属フタロシアニン系:金属フタロシアニン類又はこれらの分子間をヘテロ原子や共役系で結合したポリマーで、例えば、金属フタロシアニン等
(8)導電性複合体:上記共役系ポリマー鎖を飽和ポリマーにグラフト共重合したポリマー及び飽和ポリマー中で上記共役系ポリマーを重合することで得られる複合体で、例えば、(3)のポリチオフェン(誘導体を含む。)、ポリピロール(誘導体を含む。)、(4)のポリアニリン(誘導体を含む。)等を、また、(5)のポリ(パラフェニレンビニレン)(その誘導体を含む。)、ポリ(チオフェンビニレン)(その誘導体を含む。)等
イオン性ポリマーとしては、下記(1)~(3)等を挙げることができる。
(1)特公昭49-23828号公報、特公昭49-23827号公報、特公昭47-28937号公報等に見られるようなアニオン性高分子化合物
(2)特公昭55-734号公報、特開昭50-54672号公報、特公昭59-14735号公報、特公昭57-18175号公報、特公昭57-18176号公報、特公昭57-56059号公報等に見られるような、主鎖中に解離基を持つアイオネン型ポリマー
(3)特公昭53-13223号公報、特公昭57-15376号公報、特公昭53-45231号公報、特公昭55-145783号公報、特公昭55-65950号公報、特公昭55-67746号公報、特公昭57-11342号公報、特公昭57-19735号公報、特公昭58-56858号公報、特開昭61-27853号公報、特公昭62-9346号公報等に見られるような、側鎖中にカチオン性解離基を持つカチオン性ペンダント型ポリマー
帯電防止層を構成する導電性ポリマーとしては、特開平9-203810号公報に記載されているアイオネン導電性ポリマー又は分子間架橋を有する第4級アンモニウムカチオン導電性ポリマー等を挙げることができる。
帯電防止層を構成するその他の帯電防止剤としては、例えば、特開2006-265271号公報、特開2007-70456号公報、特開2009-62406号公報等に記載されている帯電防止ハードコート剤を用いることができる。また、市販品としても入手可能な、例えば、アイカ工業社の帯電防止剤等も適宜選択して用いることができる。
帯電防止層において帯電防止剤を保持するためのバインダー樹脂としては、例えば、セルロースジアセテート、セルローストリアセテート、セルロースアセテートブチレート、セルロースアセテートフタレート、又はセルロースナイトレート等のセルロース誘導体、ポリ酢酸ビニル、ポリスチレン、ポリカーボネート、ポリブチレンテレフタレート、又はコポリブチレン/テレ/イソフタレート等のポリエステル、ポリビニルアルコール、ポリビニルホルマール、ポリビニルアセタール、ポリビニルブチラール、ポリビニルベンザール等のポリビニルアルコール誘導体、ノルボルネン化合物を含有するノルボルネン系ポリマー、ポリメチルメタクリレート、ポリエチルメタクリレート、ポリプロピルチルメタクリレート、ポリブチルメタクリレート、ポリメチルアクリレート等のアクリル樹脂、アクリル樹脂と他の樹脂との共重合体を用いることができる。特に、セルロース誘導体、及び、アクリル樹脂が好ましく、更にアクリル樹脂が最も好ましく用いられる。
本発明に係る積層体は、支持基板上に、少なくとも、下部透明電極、有機機能層、上部透明電極、第1光学調整層及び第2光学調整層がこの順に積層されて構成されている。
本発明に係る上部透明電極及び下部透明電極は、陽極又は陰極として機能するものである。例えば、上部透明電極が陰極として機能する場合には、下部透明電極が陽極として機能する。
なお、上部透明電極及び下部透明電極における透明とは、波長550nmでの光透過率が50%以上であることをいう。
陽極としては、仕事関数の大きい(4eV以上、好ましくは4.5eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としては、Au、Ag等の金属、インジウム・スズ酸化物(ITO)、SnO2、ZnO、GZO(GaドープZnO)、AZO(AlドープZnO)、アンチモンドープ酸化亜鉛、ATO(SbドープSnO)、IZO(In2O3-ZnO)、IGZO(インジウム・ガリウム・亜鉛酸化物)等の導電性透明材料が挙げられる。
陽極は、これらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、あるいはパターン精度をあまり必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。
あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式等湿式成膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また、陽極としてのシート抵抗は数百Ω/□以下が好ましい。
陽極の膜厚は材料にもよるが、通常10nm~1μm、好ましくは10~200nmの範囲内で選ばれる。
陰極としては、仕事関数の小さい(4eV以下)金属(電子注入性金属と称する。)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。このような電極物質の具体例としては、ナトリウム、ナトリウム-カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、アルミニウム、希土類金属等が挙げられる。これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。
また、陰極に上記金属を1~20nmの膜厚で作製した後に、陽極の説明で挙げる導電性透明材料をその上に作製することで、透明又は半透明の陰極を作製することができ、これを応用することで陽極と陰極との両方が透過性を有する素子を作製することができる。
陰極は、銀単独で構成されていてもよいし、あるいは銀を含有する合金から構成されていてもよい。そのような合金としては、例えば、銀・マグネシウム(Ag・Mg)、銀・銅(Ag・Cu)、銀・パラジウム(Ag・Pd)、銀・パラジウム・銅(Ag・Pd・Cu)、銀・インジウム(Ag・In)などが挙げられる。
このような陰極においては、銀(あるいは銀を含有する合金)から構成されている層が、必要に応じて複数の層に分けて積層された構成であってもよい。
また、銀(あるいは銀を含有する合金)から構成される陰極は、膜厚が5~15nmの範囲にあることが好ましい。膜厚が15nmより薄いと層の吸収成分又は反射成分が少なくなり、透明電極の透過率が向上するためより好ましい。また、膜厚が5nmより厚いと層の導電性が十分になるため好ましい。
本発明に係る有機機能層の代表的な構成としては、以下の構成を挙げることができるが、これらに限定されるものではない。
(2)(陽極)/発光層/電子輸送層/(陰極)
(3)(陽極)/正孔輸送層/発光層/(陰極)
(4)(陽極)/正孔輸送層/発光層/電子輸送層/(陰極)
(5)(陽極)/正孔輸送層/発光層/電子輸送層/電子注入層/(陰極)
(6)(陽極)/正孔注入層/正孔輸送層/発光層/電子輸送層/(陰極)
(7)(陽極)/正孔注入層/正孔輸送層/(電子阻止層/)発光層/(正孔阻止層/)電子輸送層/電子注入層/(陰極)
本発明に係る発光層は、電極、又は電子輸送層及び正孔輸送層から注入されてくる電子及び正孔が再結合して発光する層である。
発光層の厚さの総和は特に制限はないが、膜の均質性や、発光時に不必要な高電圧が印加されることを防止し、かつ、駆動電流に対する発光色の安定性向上の観点から、好ましくは2nm~5μmの範囲内に調整され、更に好ましくは2~200nmの範囲内に調整され、特に好ましくは5~100nmの範囲内に調整される。
また、個々の発光層の厚さとしては、2nm~1μmの範囲内に調整することが好ましく、より好ましくは2~200nmの範囲内に調整され、更に好ましくは3~150nmの範囲内に調整される。
発光ドーパントとしては、蛍光発光性ドーパント(蛍光ドーパント、蛍光性化合物ともいう)と、リン光発光性ドーパント(リン光ドーパント、リン光性化合物ともいう)が好ましく用いられる。本発明においては、少なくとも1層の発光層がリン光発光ドーパントを含有することが好ましい。
発光層中の発光ドーパントの濃度については、使用される特定のドーパント及びデバイスの必要条件に基づいて、任意に決定することができ、発光層の膜厚方向に対し、均一な濃度で含有されていてもよく、また任意の濃度分布を有していてもよい。
また、本発明に係る発光ドーパントは、複数種を併用して用いてもよく、構造の異なるドーパント同士の組み合わせや、蛍光発光性ドーパントとリン光発光性ドーパントとを組み合わせて用いてもよい。これにより、任意の発光色を得ることができる。
本発明に係るリン光発光性ドーパントとは、励起三重項からの発光が観測される化合物であり、具体的には、室温(25℃)にてリン光発光する化合物であり、リン光量子収率が、25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。
上記リン光量子収率は、第4版実験化学講座7の分光IIの398頁(1992年版、丸善)に記載の方法により測定できる。溶液中でのリン光量子収率は種々の溶媒を用いて測定できるが、本発明に係るリン光発光性ドーパントは、任意の溶媒のいずれかにおいて上記リン光量子収率(0.01以上)が達成されればよい。
いずれの場合においても、リン光発光性ドーパントの励起状態のエネルギーはホスト化合物の励起状態のエネルギーよりも低いことが条件である。
本発明において使用できるリン光発光性ドーパントとしては、有機EL素子の発光層に使用される公知のものの中から適宜選択して用いることができる。
例えば、Nature 395,151(1998)、Appl.Phys.Lett.78,1622(2001)、Adv.Mater.19,739(2007)、Chem.Mater.17,3532(2005)、Adv.Mater.17,1059(2005)、国際公開第2009/100991号、国際公開第2008/101842号、国際公開第2003/040257号、米国特許出願公開第2006/835469号明細書、米国特許出願公開第2006/0202194号明細書、米国特許出願公開第2007/0087321号明細書、米国特許出願公開第2005/0244673号明細書、Inorg.Chem.40,1704(2001)、Chem.Mater.16,2480(2004)、Adv.Mater.16,2003(2004)、Angew.Chem.lnt.Ed.2006,45,7800、Appl.Phys.Lett.86,153505(2005)、Chem.Lett.34,592(2005)、Chem.Commun.2906(2005)、Inorg.Chem.42,1248(2003)、国際公開第2009/050290号、国際公開第2002/015645号、国際公開第2009/000673号、米国特許出願公開第2002/0034656号明細書、米国特許第7332232号明細書、米国特許出願公開第2009/0108737号明細書、米国特許出願公開第2009/0039776号明細書、米国特許第6921915号明細書、米国特許第6687266号明細書、米国特許出願公開第2007/0190359号明細書、米国特許出願公開第2006/0008670号明細書、米国特許出願公開第2009/0165846号明細書、米国特許出願公開第2008/0015355号明細書、米国特許第7250226号明細書、米国特許第7396598号明細書、米国特許出願公開第2006/0263635号明細書、米国特許出願公開第2003/0138657号明細書、米国特許出願公開第2003/0152802号明細書、米国特許第7090928号明細書、Angew.Chem.lnt.Ed.47,1(2008)、Chem.Mater.18,5119(2006)、Inorg.Chem.46,4308(2007)、Organometallics 23,3745(2004)、Appl.Phys.Lett.74,1361(1999)、国際公開第2002/002714号、国際公開第2006/009024号、国際公開第2006/056418号、国際公開第2005/019373号、国際公開第2005/123873号、国際公開第2007/004380号、国際公開第2006/082742号、米国特許出願公開第2006/0251923号明細書、米国特許出願公開第2005/0260441号明細書、米国特許第7393599号明細書、米国特許第7534505号明細書、米国特許第7445855号明細書、米国特許出願公開第2007/0190359号明細書、米国特許出願公開第2008/0297033号明細書、米国特許第7338722号明細書、米国特許出願公開第2002/0134984号明細書、米国特許第7279704号明細書、米国特許出願公開第2006/098120号明細書、米国特許出願公開第2006/103874号明細書、国際公開第2005/076380号、国際公開第2010/032663号、国際公開第第2008/140115号、国際公開第2007/052431号、国際公開第2011/134013号、国際公開第2011/157339号、国際公開第2010/086089号、国際公開第2009/113646号、国際公開第2012/020327号、国際公開第2011/051404号、国際公開第2011/004639号、国際公開第2011/073149号、米国特許出願公開第2012/228583号明細書、米国特許出願公開第2012/212126号明細書、特開2012-069737号公報、特開2012-195554号公報、特開2009-114086号公報、特開2003-81988号公報、特開2002-302671号公報、特開2002-363552号公報、特開2009-231516号公報、国際公開第2012/112853号、特許第5124942号公報、特許第4784600号公報、特開2010-47764号公報等である。
中でも、リン光発光性ドーパントとしては、Irを中心金属に有する有機金属錯体が挙げられる。さらに好ましくは、金属-炭素結合、金属-窒素結合、金属-酸素結合、金属-硫黄結合の少なくとも一つの配位様式を含む錯体が好ましい。
蛍光発光性ドーパント(以下、蛍光ドーパントともいう。)について説明する。
蛍光ドーパントは、励起一重項からの発光が可能な化合物であり、励起一重項からの発光が観測される限り特に限定されない。
遅延蛍光を利用した発光ドーパントの具体例としては、たとえば、国際公開第2011/156793号、特開2011-213643号公報、特開2010-93181号公報等に記載の化合物が挙げられるが、本発明はこれらに限定されない。
本発明に係るホスト化合物は、発光層において主に電荷の注入及び輸送を担う化合物であり、有機EL素子においてそれ自体の発光は実質的に観測されない。
好ましくは室温(25℃)においてリン光発光のリン光量子収率が、0.1未満の化合物であり、更に好ましくはリン光量子収率が0.01未満の化合物である。
また、発光層に含有される化合物のうちで、その層中での質量比が20%以上であることが好ましい。
また、ホスト化合物の励起状態エネルギーは、同一層内に含有されるリン光発光性ドーパントの励起状態エネルギーよりも高いことが好ましい。
ホスト化合物は、単独で用いてもよく、又は複数種併用して用いてもよい。ホスト化合物を複数種用いることで、電荷の移動を調整することが可能であり、有機EL素子を高効率化することができる。
ここで、ガラス転移点(Tg)とは、DSC(Differential Scanning Calorimetry:示差走査熱量法)を用いて、JIS K 7121に準拠した方法により求められる値である。
特開2001-257076号公報、同2002-308855号公報、同2001-313179号公報、同2002-319491号公報、同2001-357977号公報、同2002-334786号公報、同2002-8860号公報、同2002-334787号公報、同2002-15871号公報、同2002-334788号公報、同2002-43056号公報、同2002-334789号公報、同2002-75645号公報、同2002-338579号公報、同2002-105445号公報、同2002-343568号公報、同2002-141173号公報、同2002-352957号公報、同2002-203683号公報、同2002-363227号公報、同2002-231453号公報、同2003-3165号公報、同2002-234888号公報、同2003-27048号公報、同2002-255934号公報、同2002-260861号公報、同2002-280183号公報、同2002-299060号公報、同2002-302516号公報、同2002-305083号公報、同2002-305084号公報、同2002-308837号公報、米国特許出願公開第2003/0175553号明細書、米国特許出願公開第2006/0280965号明細書、米国特許出願公開第2005/0112407号明細書、米国特許出願公開第2009/0017330号明細書、米国特許出願公開第2009/0030202号明細書、米国特許出願公開第2005/0238919号明細書、国際公開第2001/039234号、国際公開第2009/021126号、国際公開第2008/056746号、国際公開第2004/093207号、国際公開第2005/089025号、国際公開第2007/063796号、国際公開第2007/063754号、国際公開第2004/107822号、国際公開第2005/030900号、国際公開第2006/114966号、国際公開第2009/086028号、国際公開第2009/003898号、国際公開第2012/023947号、特開2008-074939号公報、特開2007-254297号公報、欧州特許第2034538号明細書等である。
本発明における正孔輸送層とは、正孔を輸送する機能を有する材料からなり、陽極より注入された正孔を発光層に伝達する機能を有していればよい。
正孔輸送層の総厚については特に制限はないが、通常は5nm~5μmの範囲内であり、より好ましくは2~500nmの範囲内であり、更に好ましくは5~200nmの範囲内である。
例えば、ポルフィリン誘導体、フタロシアニン誘導体、オキサゾール誘導体、オキサジアゾール誘導体、トリアゾール誘導体、イミダゾール誘導体、ピラゾリン誘導体、ピラゾロン誘導体、フェニレンジアミン誘導体、ヒドラゾン誘導体、スチルベン誘導体、ポリアリールアルカン誘導体、トリアリールアミン誘導体、カルバゾール誘導体、インドロカルバゾール誘導体、イソインドール誘導体、アントラセンやナフタレン等のアセン系誘導体、フルオレン誘導体、フルオレノン誘導体、及びポリビニルカルバゾール、芳香族アミンを主鎖又は側鎖に導入した高分子材料又はオリゴマー、ポリシラン、導電性ポリマー又はオリゴマー(例えばPEDOT:PSS、アニリン系共重合体、ポリアニリン、ポリチオフェン等)等が挙げられる。
トリアリールアミン誘導体としては、α-NPDに代表されるベンジジン型や、MTDATAに代表されるスターバースト型、トリアリールアミン連結コア部にフルオレンやアントラセンを有する化合物等が挙げられる。
また、特表2003-519432号公報や特開2006-135145号公報等に記載されているようなヘキサアザトリフェニレン誘導体も同様に正孔輸送材料として用いることができる。
さらに、不純物をドープしたp性の高い正孔輸送層を用いることもできる。その例としては、特開平4-297076号公報、特開2000-196140号公報、同2001-102175号公報の各公報、J.Appl.Phys.,95,5773(2004)等に記載されたものが挙げられる。
また、特開平11-251067号公報、J.Huang et.al.著文献(Applied Physics Letters 80(2002),p.139)に記載されているような、いわゆるp型正孔輸送材料やp型-Si、p型-SiC等の無機化合物を用いることもできる。さらに、Ir(ppy)3に代表されるような中心金属にIrやPtを有するオルトメタル化有機金属錯体も好ましく用いられる。
正孔輸送材料としては、上記のものを使用することができるが、トリアリールアミン誘導体、カルバゾール誘導体、インドロカルバゾール誘導体、アザトリフェニレン誘導体、有機金属錯体、芳香族アミンを主鎖又は側鎖に導入した高分子材料又はオリゴマー等が好ましく用いられる。
例えば、Appl.Phys.Lett.69,2160(1996)、J.Lumin.72-74,985(1997)、Appl.Phys.Lett.78,673(2001)、Appl.Phys.Lett.90,183503(2007)、Appl.Phys.Lett.90,183503(2007)、Appl.Phys.Lett.51,913(1987)、Synth.Met.87,171(1997)、Synth.Met.91,209(1997)、Synth.Met.111,421(2000)、SID Symposium Digest,37,923(2006)、J.Mater.Chem.3,319(1993)、Adv.Mater.6,677(1994)、Chem.Mater.15,3148(2003)、米国特許出願公開第2003/0162053号明細書、米国特許出願公開第2002/0158242号明細書、米国特許出願公開第2006/0240279号明細書、米国特許出願公開第2008/0220265号明細書、米国特許第5061569号明細書、国際公開第2007/002683号、国際公開第2009/018009号、欧州特許第650955号明細書、米国特許出願公開第2008/0124572号明細書、米国特許出願公開第2007/0278938号明細書、米国特許出願公開第2008/0106190号明細書、米国特許出願公開第2008/0018221号明細書、国際公開第2012/115034号、特表2003-519432号公報、特開2006-135145号公報、米国特許出願公開第2013/0049576号明細書等である。
電子阻止層とは、広い意味では正孔輸送層の機能を有する層であり、好ましくは正孔を輸送する機能を有しつつ電子を輸送する能力が小さい材料からなり、正孔を輸送しつつ電子を阻止することで電子と正孔の再結合確率を向上させることができる。
また、前述する正孔輸送層の構成を必要に応じて、電子阻止層として用いることができる。
電子阻止層は、発光層の陽極側に隣接して設けられることが好ましい。
電子阻止層の厚さとしては、好ましくは3~100nmの範囲内であり、更に好ましくは5~30nmの範囲内である。
電子阻止層に用いられる材料としては、前述の正孔輸送層に用いられる材料が好ましく用いられ、また、前述のホスト化合物として用いられる材料も電子阻止層に好ましく用いられる。
正孔注入層(陽極バッファー層ともいう。)とは、駆動電圧低下や発光輝度向上のために陽極と発光層との間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されている。
本発明において正孔注入層は必要に応じて設け、上記のように陽極と発光層又は陽極と正孔輸送層との間に存在させてもよい。
正孔注入層は、特開平9-45479号公報、同9-260062号公報、同8-288069号公報等にもその詳細が記載されており、正孔注入層に用いられる材料としては、例えば前述の正孔輸送層に用いられる材料等が挙げられる。
中でも、銅フタロシアニンに代表されるフタロシアニン誘導体、特表2003-519432号公報や特開2006-135145号公報等に記載されているようなヘキサアザトリフェニレン誘導体、酸化バナジウムに代表される金属酸化物、アモルファスカーボン、ポリアニリン(エメラルディン)やポリチオフェン等の導電性高分子、トリス(2-フェニルピリジン)イリジウム錯体等に代表されるオルトメタル化錯体、トリアリールアミン誘導体等が好ましい。
前述の正孔注入層に用いられる材料は単独で用いてもよく、また、複数種を併用して用いてもよい。
本発明において電子輸送層とは、電子を輸送する機能を有する材料からなり、陰極より注入された電子を発光層に伝達する機能を有していればよい。
本発明の電子輸送層の総厚については特に制限はないが、通常は2nm~5μmの範囲内であり、より好ましくは2~500nmの範囲内であり、更に好ましくは5~200nmの範囲内である。
一方で、電子輸送層の厚さを大きくすると電圧が上昇しやすくなるため、特に厚さが大きい場合においては、電子輸送層の電子移動度は1×10-5cm2/Vs以上であることが好ましい。
例えば、含窒素芳香族複素環誘導体(カルバゾール誘導体、アザカルバゾール誘導体(カルバゾール環を構成する炭素原子の一つ以上が窒素原子に置換されたもの)、ピリジン誘導体、ピリミジン誘導体、ピラジン誘導体、ピリダジン誘導体、トリアジン誘導体、キノリン誘導体、キノキサリン誘導体、フェナントロリン誘導体、アザトリフェニレン誘導体、オキサゾール誘導体、チアゾール誘導体、オキサジアゾール誘導体、チアジアゾール誘導体、トリアゾール誘導体、ベンズイミダゾール誘導体、ベンズオキサゾール誘導体、ベンズチアゾール誘導体等)、ジベンゾフラン誘導体、ジベンゾチオフェン誘導体、シロール誘導体、芳香族炭化水素環誘導体(ナフタレン誘導体、アントラセン誘導体、トリフェニレン等)等が挙げられる。
また、配位子にキノリノール骨格やジベンゾキノリノール骨格を有する金属錯体、例えば、トリス(8-キノリノール)アルミニウム(Alq3)、トリス(5,7-ジクロロ-8-キノリノール)アルミニウム、トリス(5,7-ジブロモ-8-キノリノール)アルミニウム、トリス(2-メチル-8-キノリノール)アルミニウム、トリス(5-メチル-8-キノリノール)アルミニウム、ビス(8-キノリノール)亜鉛(Znq)等、及びこれらの金属錯体の中心金属がIn、Mg、Cu、Ca、Sn、Ga又はPbに置き替わった金属錯体も、電子輸送材料として用いることができる。
また、これらの材料を高分子鎖に導入した、又はこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。
電子輸送層においては、電子輸送層にドープ材をゲスト材料としてドープして、n性の高い(電子リッチ)電子輸送層を形成してもよい。ドープ材としては、金属錯体やハロゲン化金属など金属化合物等のn型ドーパントが挙げられる。このような構成の電子輸送層の具体例としては、例えば、特開平4-297076号公報、同10-270172号公報、特開2000-196140号公報、同2001-102175号公報、J.Appl.Phys.,95,5773(2004)等の文献に記載されたものが挙げられる。
また、駆動電圧を下げるという点などから、金属フッ化物がドープされていることが好ましい。
米国特許第6528187号明細書、米国特許第7230107号明細書、米国特許出願公開第2005/0025993号明細書、米国特許出願公開第2004/0036077号明細書、米国特許出願公開第2009/0115316号明細書、米国特許出願公開第2009/0101870号明細書、米国特許出願公開第2009/0179554号明細書、国際公開第2003/060956号、国際公開第2008/132085号、Appl.Phys.Lett.75,4(1999)、Appl.Phys.Lett.79,449(2001)、Appl.Phys.Lett.81,162(2002)、Appl.Phys.Lett.81,162(2002)、Appl.Phys.Lett.79,156(2001)、米国特許第7964293号明細書、米国特許出願公開第2009/030202号明細書、国際公開第2004/080975号、国際公開第2004/063159号、国際公開第2005/085387号、国際公開第2006/067931号、国際公開第2007/086552号、国際公開第2008/114690号、国際公開第2009/069442号、国際公開第2009/066779号、国際公開第2009/054253号、国際公開第2011/086935号、国際公開第2010/150593号、国際公開第2010/047707号、欧州特許第2311826号明細書、特開2010-251675号公報、特開2009-209133号公報、特開2009-124114号公報、特開2008-277810号公報、特開2006-156445号公報、特開2005-340122号公報、特開2003-45662号公報、特開2003-31367号公報、特開2003-282270号公報、国際公開第2012/115034号等である。
正孔阻止層とは、広い意味では電子輸送層の機能を有する層であり、好ましくは電子を輸送する機能を有しつつ正孔を輸送する能力が小さい材料からなり、電子を輸送しつつ正孔を阻止することで電子と正孔の再結合確率を向上させることができる。
また、前述する電子輸送層の構成を必要に応じて、正孔阻止層として用いることができる。
正孔阻止層は、発光層の陰極側に隣接して設けられることが好ましい。
正孔阻止層の厚さとしては、好ましくは3~100nmの範囲内であり、更に好ましくは5~30nmの範囲内である。
電子注入層(陰極バッファー層ともいう。)とは、駆動電圧低下や発光輝度向上のために陰極と発光層との間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されている。
本発明において電子注入層は必要に応じて設け、上記のように陰極と発光層との間、又は陰極と電子輸送層との間に存在させてもよい。
電子注入層はごく薄い膜であることが好ましく、素材にもよるがその厚さは0.1~5nmの範囲内が好ましい。また、構成材料が断続的に存在する不均一な膜であってもよい。
前述した本発明における有機機能層は、更に他の添加物が含まれていてもよい。
添加物としては、例えば、臭素、ヨウ素、塩素等のハロゲン元素やハロゲン化化合物、Pd、Ca、Na等のアルカリ金属やアルカリ土類金属、遷移金属の化合物や錯体、塩等が挙げられる。
添加物の添加量は、任意に決定することができるが、添加される層の全質量%に対して1000ppm以下であることが好ましく、より好ましくは500ppm以下であり、更に好ましくは50ppm以下である。
ただし、電子や正孔の輸送性を向上させる目的や、励起子のエネルギー移動を有利にするための目的などによってはこの範囲内ではない。
本発明に係る有機機能層(正孔注入層、正孔輸送層、電子阻止層、発光層、正孔阻止層、電子輸送層、電子注入層等)の形成方法について説明する。
有機機能層の形成方法としては、特に制限はなく、従来公知の、例えば、真空蒸着法、湿式法(ウェットプロセスともいう。)等による形成方法を用いることができる。
湿式法としては、スピンコート法、キャスト法、インクジェット法、印刷法、ダイコート法、ブレードコート法、ロールコート法、スプレーコート法、カーテンコート法、LB法(ラングミュア-ブロジェット法)等があるが、均質な薄膜が得られやすく、かつ高生産性の点から、ダイコート法、ロールコート法、インクジェット法、スプレーコート法などのロール・ツー・ロール方式適性の高い方法が好ましい。
有機機能層材料を溶解又は分散する液媒体としては、例えば、メチルエチルケトン、シクロヘキサノン等のケトン類、酢酸エチル等の脂肪酸エステル類、ジクロロベンゼン等のハロゲン化炭化水素類、トルエン、キシレン、メシチレン、シクロヘキシルベンゼン等の芳香族炭化水素類、シクロヘキサン、デカリン、ドデカン等の脂肪族炭化水素類、DMF、DMSO等の有機溶媒を用いることができる。
また、分散方法としては、超音波、高剪断力分散やメディア分散等の分散方法により分散することができる。
有機機能層の形成は、1回の真空引きで一貫して正孔注入層から陰極まで作製するのが好ましいが、途中で取り出して異なる成膜法を施しても構わない。その際は作業を乾燥不活性ガス雰囲気下で行うことが好ましい。
本発明の有機EL素子において、光透過率を高くする観点から、第1光学調整層の屈折率が第2光学調整層の屈折率よりも大きくなっていることを特徴とする。
第1光学調整層の屈折率が第2光学調整層の屈折率より大きければ本発明の効果を得ることができるが、好ましくは屈折率差が0.3以上、より好ましくは0.6以上、最も好ましくは0.9以上である。
なお、本発明において、屈折率とは、23℃・55%RHの環境下で測定した、波長550nmにおける屈折率の値とする。屈折率は、市販のエリプソメーターを用いて測定して求めることができる。
第1光学調整層の屈折率は、1.6以上が好ましく、2.0以上がより好ましく、2.3以上が最も好ましい。
第2光学調整層の屈折率は、1.7以下が好ましく、1.6以下がより好ましく、1.4以下が最も好ましい。
有機EL素子の上部透明電極上に、ダメージなく成膜できるという点から、真空成膜できる化合物が好ましい。特に、加熱蒸着やEB(電子銃)蒸着できる化合物が好ましい。
また、有機EL素子に用いられる材料も用いることができる。
第1光学調整層及び第2光学調整層の成膜範囲としては、有機EL素子の保存性の観点から、後述する封止基板や封止膜よりも狭い範囲とすることが好ましい。
含窒素化合物としては、例えば、ヘキサンジアミン、イソシアネート、ポリアミド、ポリウレタン、芳香族性に関与しない非共有電子対を有する窒素原子を含む芳香族複素環化合物、窒素原子を含有する低分子有機化合物等が挙げられる。中でも、芳香族性に関与しない非共有電子対を有する窒素原子を含む芳香族複素環化合物が好ましい。
窒素原子を含有する低分子有機化合物としては、融点が80℃以上であり、かつ、分子量Mが150~1200の範囲内にある化合物が好ましい。また、窒素原子を含有する低分子有機化合物は、銀等との相互作用が大きい方が好ましく、例えば、含窒素複素環化合物、フェニル基置換アミン化合物が挙げられる。
本発明に係る第1光学調整層は、硫黄原子を含む化合物(含硫黄化合物)を含有することが好ましい。
硫黄原子を含有する有機化合物としては、分子内にスルフィド結合(チオエーテル結合ともいう。)、ジスルフィド結合、メルカプト基、スルホン基、チオカルボニル結合等を有していればよく、特に、スルフィド結合、メルカプト基であることが好ましい。
R3及びR4で表される置換基としては、R1及びR2と同様の置換基が挙げられる。
R5で表される置換基としては、R1及びR2と同様の置換基が挙げられる。
R6で表される置換基としては、R1及びR2と同様の置換基が挙げられる。
本発明の有機EL素子の封止に用いられる封止手段としては、例えば、封止基板と電極、支持基板とを接着剤で接着する方法を挙げることができる。封止基板としては、有機EL素子の表示領域を覆うように配置されていればよく、凹板状でも、平板状でもよい。また、電気絶縁性は特に限定されない。
封止基板としては、具体的には、前述の支持基板に用いられるのと同様の材料を用いることができる。
封止基板は、支持基板と同様に、ガスバリアー層を設けることが好ましい。また、封止基板には、帯電防止層を設けてもよい。
なお、有機EL素子が熱処理により劣化する場合があるので、室温(25℃)から80℃までに接着硬化できるものが好ましい。また、接着剤中に乾燥剤を分散させておいてもよい。封止基板への接着剤の塗布は市販のディスペンサーを使ってもよいし、スクリーン印刷のように印刷してもよい。
封止膜と接着剤との屈折率差は、透過率を高めるという点から、小さいほうが好ましい。
本発明の有機EL素子は、表示デバイス、ディスプレイ、各種発光光源として用いることができる。
発光光源として、例えば、照明装置(家庭用照明、車内照明)、時計や液晶用バックライト、看板広告、信号機、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、これに限定されるものではなく、特に液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
《有機EL素子の作製》
〈有機EL素子101の作製〉
(1)支持基板の準備
両面を表面活性化処理した、厚さ100μmのポリエチレンテレフタレート(PET)フィルム(東レ社製のルミラー(登録商標)U48)の一方の面に、下記の方法で有機帯電防止剤を含む帯電防止層を形成した。
下記の方法に従って、コロイダルシリカ含有単量体(A)を調製し、このコロイダルシリカ含有単量体(A)を用いて、有機帯電防止剤である帯電防止ハードコート剤(A)を調製した。そして、この有機帯電防止剤を用いて帯電防止層を形成した。
溶媒として酢酸エチルを用いて分散したコロイダルシリカ(SiO2成分30質量%、平均粒子径20nm、日産化学(株)製)の130質量部に、2-メタクリロイルオキシエチルイソシアネート(MOI)(分子量155、昭和電工(株)製)の30質量部と、触媒としてジラウリン酸ジ-n-ブチル錫(DBTDL)を0.1質量部加えて、室温(25℃)で24時間撹拌した。赤外分光法によりイソシアネート基の反応の確認を行い、エバボレーターで溶媒である酢酸エチルを除去して、コロイダルシリカ含有単量体(A)を得た。
上記で製造したコロイダルシリカ含有単量体(A)(不揮発分:36質量%)の100質量部に、Li+/CF3SO3 -のメチルエチルケトン溶液(不揮発分:50質量%、三光化学工業(株)製)の5質量部を混合して撹拌した。開始剤としては、Irgacure907(BASFジャパン社製)を1質量部加え、有機帯電防止剤である帯電防止ハードコート剤(A)を調製した。
次に、支持基板上に、調製した有機帯電防止剤である帯電防止ハードコート剤(A)を、硬化後の厚さが10μmとなる条件で、塗布及び乾燥した。この後、80W/cmの水銀灯を用い、300mJの条件で紫外線照射処理を行い、有機帯電防止剤からなる帯電防止層を形成した。
次に、PETフィルムのもう一方の面に厚さ2μmの下地層を形成した。具体的には、UV硬化型樹脂オプスター(登録商標)Z7527(JSR社製)を、乾燥後の厚さが2μmとなるように塗布した。塗膜を80℃で乾燥した後、大気下で高圧水銀ランプを用いて照射エネルギー量が0.5J/cm2の紫外線を照射する硬化処理を施した。
下地層を形成したPETフィルムを120mm×100mmの大きさで切り出し、下地層上に、ケイ素含有ポリマー改質層を、以下のようにして形成した。
チャンバー102内は、遮蔽板106によって樹脂フィルム2の搬送方向Vに三つのゾーンに分けられ、中央のゾーンには複数のXeエキシマランプ108が設置されている。Xeエキシマランプ108は、電源を内蔵するホルダー110によって支持され、点灯制御される。ケイ素含有ポリマーの塗膜が形成された樹脂フィルム2を、このXeエキシマランプ108が設置されたゾーン内を通過させることにより、真空紫外線を照射することができる。
ケイ素化合物層の成膜条件は、以下のとおりである。
酸素ガス(O2)の供給量:500sccm
真空チャンバー内の真空度:3Pa
プラズマ発生用電源からの印加電力:1.2kW
プラズマ発生用電源の周波数:80kHz
フィルムの搬送速度:0.5m/min
市販のスパッタ装置に、In2O3:ZnO(90質量%:10質量%)のターゲットを取り付け、以下の条件にて、厚さ250nmのIZOからなる陽極を形成した。
アルゴン流量:99sccm
酸素流量:1sccm
出力:5W/cm2
作製した陽極上に、以下のようにして、各種有機層を形成した。
続いて、銀を蒸着速度0.3nm/秒で8nm蒸着し、陰極とした。
続いて、アントラセンを0.1nm/秒で蒸着し、厚さ45nmの光学調整層(第1光学調整層とする。)を形成した。
(6.1)接着剤組成物の調製
ポリイソブチレン系樹脂(A)として「オパノールB50(BASF製、Mw:34万)」100質量部、ポリブテン樹脂(B)として「日石ポリブテン グレードHV-1900(新日本石油社製、Mw:1900)」30質量部、ヒンダードアミン系光安定剤(C)として「TINUVIN765(BASF・ジャパン製、3級のヒンダードアミン基を有する)」0.5質量部、ヒンダードフェノール系酸化防止剤(D)として「IRGANOX1010(BASF・ジャパン製、ヒンダードフェノール基のβ位が二つともターシャリーブチル基を有する)」0.5質量部、及び環状オレフィン系重合体(E)として「Eastotac H-100L Resin(イーストマンケミカル.Co.製)」50質量部を、トルエンに溶解し、固形分濃度約25質量%の接着剤組成物を調製した。
上記で作製したガスバリアー付き支持基板を用意し、これをそのまま封止基板とした。次に、調製した上記接着剤組成物の溶液を乾燥後に形成される接着層の厚さが20μmとなるように封止基板の陰極側(ガスバリアー層側)となる表面に塗工し、120℃で2分間乾燥させて接着層を形成した。次に、形成した接着層面に対して、剥離シートとして、厚さ38μmの剥離処理をしたポリエチレンテレフタレートフィルムの剥離処理面を貼付して、封止基板を作製した。
放置後、剥離シートを除去し、80℃に加熱した真空ラミネーターで有機発光素子の陰極を覆う形でラミネートした。更に、120℃で30分加熱し封止し、有機EL素子101を作製した。
有機EL素子101の作製において、(第1)光学調整層及び第2光学調整層を以下のようにして形成した以外は同様にして、有機EL素子102を作製した。
陰極上に、電子銃蒸着用のるつぼにセットしておいたフッ化マグネシウム(MgF2)を電子銃を用いて蒸着し、第1光学調整層を形成した。蒸着速度は、約1nm/secとした。
第1光学調整層上に、アントラセンを0.1nm/秒で蒸着し、厚さ45nmの第2光学調整層を形成した。
有機EL素子102の作製において、第1光学調整層及び第2光学調整層の材料及び厚さを表2に記載のように変更した以外は同様にして、有機EL素子103~111を作製した。
表2に記載の各材料を用いた光学調整層の形成方法は、以下に示すとおりである。
Nb2O5:電子銃を用いて、蒸着速度約1nm/secで蒸着した。
TiO2:電子銃を用いて、蒸着速度約1nm/secで蒸着した。
CaF2:電子銃を用いて、蒸着速度約1nm/secで蒸着した。
MgF2:電子銃を用いて、蒸着速度約1nm/secで蒸着した。
NaF:蒸着速度約0.2nm/secで加熱蒸着した。
有機化合物A:蒸着速度約0.1nm/secで加熱蒸着した。
〈光透過率の測定〉
作製した各有機EL素子について、このサンプルの全光線透過率(%)を、日本電色工業株式会社製NDH7000を用いて、JIS K 7361準拠して測定した。
B:発光領域と非発光領域との光透過率差がやや見られる。
C:発光領域と非発光領域との光透過率差が見られるが、実用上問題ない。
D:発光領域と非発光領域との光透過率差が大きく実用上問題ある。
以上から、第1光学調整層の屈折率が第2光学調整層の屈折率よりも大きく、上部透明電極と第1光学調整層、及び、第1光学調整層と第2光学調整層がそれぞれ直接接して設けられていることが、光透過率が高く、かつ、発光領域と非発光領域との視覚上の差が小さい(発光領域と非発光領域との光透過率の差が小さい)有機EL素子を提供することに有用であることがわかる。
《有機EL素子の作製》
〈有機EL素子201の作製〉
実施例1の有機EL素子103の作製において、第2光学調整層と接着剤との間に以下のようにして封止膜を形成した以外は同様にして、有機EL素子201を作製した。
以下の条件で、窒化ケイ素膜をデポアップ方式のプラズマCVD成膜装置によって成膜し、封止膜を形成した。窒化ケイ素膜の膜厚は、300nmとした。
成膜ガスは、シランガス(SiH4)、アンモニアガス(NH3)、窒素ガス(N2)及び水素ガス(H2)を用いた。これらのガスの供給量は、シランガスが100sccm、アンモニアガスが200sccm、窒素ガスが500sccm、水素ガスが500sccmとした。
また、成膜圧力は、50Paとした。
電極には、高周波電源から周波数13.5MHzで3000Wのプラズマ励起電力を供給した。さらに、保持部材には、バイアス電源から500Wのバイアス電力を供給した。
〈光透過率の測定〉
実施例1と同様にして、光透過率を測定した。
測定結果を表3に示す。なお、有機EL素子201の光透過率は、有機EL素子101の光透過率を100とする相対値で示している。
作製した各有機EL素子について、60℃・相対湿度90%の環境下に100時間静置した後の光透過率を測定し、保存性試験前後での光透過率の変化率(%)を下記式に従って算出した。
評価結果を表3に示す。
以上から、第2光学調整層と接着剤との間に封止膜が設けられ、当該封止膜が第2光学調整層及び接着剤の両方に直接接して設けられていることが、保存性に優れた有機EL素子を提供することに有用であることがわかる。
《有機EL素子の作製》
〈有機EL素子301~303の作製〉
実施例2の有機EL素子201の作製において、第1光学調整層の材料を表4に記載のように変更した以外は同様にして、有機EL素子301~303を作製した。
表4に記載の各材料を用いた光学調整層の形成方法は、以下に示すとおりである。
実施例1及び実施例2と同様にして、光透過率及び保存性を評価した。
評価結果を表4に示す。なお、有機EL素子301~303の光透過率は、有機EL素子101の光透過率を100とする相対値で示している。
以上から、第1光学調整層に含窒素化合物が含有されていることが、保存性に優れた有機EL素子を提供することに有用であることがわかる。
《有機EL素子の作製》
〈有機EL素子401及び402の作製〉
実施例3の有機EL素子302の作製において、電子注入層と陰極との間に、アルミニウム(厚さ0.6nm)に代えて、リチウム(厚さ1.5nm)、カルシウム(厚さ1.5nm)をそれぞれ蒸着した以外は同様にして、有機EL素子401及び402を作製した。
実施例1及び実施例2と同様にして、光透過率及び保存性を評価した。
評価結果を表5に示す。なお、有機EL素子401及び402の光透過率は、有機EL素子101の光透過率を100とする相対値で示している。
以上から、電子注入層と陰極との間にLi、Caからなる層を設けることが、光透過率が高い有機EL素子を提供することに有用であることが分かる。
2 支持基板
4 下部透明電極
4a 給電部
6 有機機能層
8 上部透明電極
8a 給電部
10 第1光学調整層
12 第2光学調整層
14 積層体
16 接着剤
18 封止基板
20 封止膜
100 真空紫外線照射装置
102 チャンバー
104 ステージ
106 遮蔽板
108 Xeエキシマランプ
110 ホルダー
L 発光領域
NL 非発光領域
Claims (5)
- 支持基板上に、少なくとも、下部透明電極、発光層を含む有機機能層、上部透明電極、第1光学調整層及び第2光学調整層がこの順に積層された積層体と、前記発光層の発光領域を被覆するようにして前記支持基板と接着剤を介して貼合された封止基板と、を有する有機エレクトロルミネッセンス素子であって、
前記第1光学調整層の屈折率が、前記第2光学調整層の屈折率よりも大きく、
前記上部透明電極と前記第1光学調整層、及び、前記第1光学調整層と前記第2光学調整層が、それぞれ直接接して設けられていることを特徴とする有機エレクトロルミネッセンス素子。 - 前記第2光学調整層と前記接着剤との間に、封止膜が設けられ、
前記封止膜が、前記第2光学調整層及び前記接着剤の両方に直接接して設けられていることを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子。 - 前記上部透明電極が、金属薄膜であることを特徴とする請求項1又は請求項2に記載の有機エレクトロルミネッセンス素子。
- 前記第1光学調整層に、含窒素化合物が含有されていることを特徴とする請求項1から請求項3までのいずれか一項に記載の有機エレクトロルミネッセンス素子。
- 請求項1から請求項4までのいずれか一項に記載の有機エレクトロルミネッセンス素子を備えたことを特徴とする照明装置。
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JP2006004917A (ja) * | 2004-05-20 | 2006-01-05 | Semiconductor Energy Lab Co Ltd | 発光素子及び表示装置 |
WO2012168978A1 (ja) * | 2011-06-09 | 2012-12-13 | パナソニック株式会社 | 有機発光パネルおよびその製造方法 |
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JP2018195521A (ja) * | 2017-05-22 | 2018-12-06 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
JP6996869B2 (ja) | 2017-05-22 | 2022-01-17 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング | 有機エレクトロルミネッセンス素子 |
JP2019172873A (ja) * | 2018-03-29 | 2019-10-10 | 日産化学株式会社 | 硬化性組成物、その硬化物、及び電子デバイス |
JP7155576B2 (ja) | 2018-03-29 | 2022-10-19 | 日産化学株式会社 | 硬化性組成物、その硬化物、及び電子デバイス |
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JPWO2017056553A1 (ja) | 2018-07-19 |
US20180269430A1 (en) | 2018-09-20 |
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