WO2017042179A1

WO2017042179A1 - Semiconductor component

Info

Publication number: WO2017042179A1
Application number: PCT/EP2016/071010
Authority: WO
Inventors: Torsten Kramer; Marc Wisniewski; Christian Doering
Original assignee: Robert Bosch Gmbh
Priority date: 2015-09-10
Filing date: 2016-09-07
Publication date: 2017-03-16
Also published as: DE102015217298A1

Abstract

The invention relates to a semiconductor component (100), in particular a sensor element (900) for sensing at least one property of a measurement gas in a measurement gas chamber. The semiconductor component (100) comprises a membrane structure (200), wherein the membrane structure (200) is formed in particular of a plurality of honeycomb-shaped sub-membranes (220). The semiconductor component (100) also comprises a supporting structure (250) for mechanically stabilizing the membrane structure (200), wherein the sub-membranes (200) are connected to the supporting structure (250) in particular at edge regions (230) of the bottom sides (224) of the sub-membranes. In order to be able to electrically contact the membrane structure (200) more simply or to be able to heat the membrane structure (200) more evenly or to be able to sense the temperature of the membrane structure (200) more precisely, at least one conducting track (300, 302, 304) according to the invention is arranged on an end face (252) of the supporting structure (250).

Description

description

title

Semiconductor device Field of the invention

The invention relates to a semiconductor device and a sensor element with a

Semiconductor device prior art

In semiconductor devices, e.g. for fuel cells or sensor elements for detecting at least one property of a sample gas in a sample gas space, heating may be necessary or it may be necessary to increase the temperature of e.g. Accurately detect membrane structures. In the case of such semiconductor components, a resistance heater or a temperature detection element for detecting a temperature may be provided for this purpose, for example, which is arranged around the surface to be heated. A semiconductor device with a heating conductor is known from DE 197 42 696 A1.

DISCLOSURE OF THE INVENTION The invention is based on the recognition that in current semiconductor components with high-temperature membrane structures, insulated conductor tracks are thermally and electrically required in relation to the bulk chip. These can be used for power line, heating and temperature measurement. It has been shown that it is not readily possible for such semiconductor components to position the printed conductors on the membrane structure, for example when the membrane structure is formed from a plurality of honeycomb-shaped sub-membranes. Therefore, such need Semiconductor devices a comparatively high performance and relatively much time, for example, to regulate the membrane temperature

For semiconductor devices, e.g. are used in sensor elements in the exhaust system, sometimes very high temperatures are required, which must be controlled precisely and quickly. This also applies to fuel cells in which such semiconductor devices are used. Here is a fast and efficient

Temperature control is a decisive advantage for high energy efficiency. There may therefore be a need to provide a semiconductor device in which a fast and precise temperature control by accurate heating and / or direct and rapid temperature detection is possible with the lowest possible power consumption. Advantages of the invention

This need can be met by the subject matter of the present invention according to the independent claims. Advantageous embodiments of the present invention are described in the dependent claims.

According to a first aspect of the invention, a semiconductor device

proposed, which comprises a membrane structure. In this case, the membrane structure may for example be formed from a plurality of honeycomb-shaped sub-membranes, e.g. from at least 12 sub-membranes, preferably from at least 25 sub-membranes. The semiconductor device further comprises a support structure for mechanical stabilization of the membrane structure, wherein the sub-membranes are connected to the support structure. The sub-membranes may e.g. be connected to the support structures at the edge regions of their undersides. It is provided according to the invention that at least one conductor track is arranged on an end face of the support structure.

Under a front side is to understand a distal end of the support structure. The at least one conductor track can be arranged, for example, on the first distal end, that is to say, for example, on the front side of the support structure adjacent to the upper side of the membrane. It may alternatively or additionally also be arranged on the second distal end, that is to say on the end face of the support structure facing away from the upper side of the membrane. In this case, the conductor track may be formed such that it is in mechanical contact with the support structure in the region of the support structure or in the region of the membrane structure. In other words, the conductor track can be designed such that it is arranged along its extent parallel to the plane of the membrane structure with the predominant part of its length on the front side of the support structure, preferably along its entire extension, particularly preferably along its entire extent in a plane parallel to the level of the membrane structure. It is thus not arranged in such a training on the membrane structure and thus not on one of

Under membranes.

For the purposes of this application, the term "semiconductor component" can be used

Component can be understood, which comprises at least as a carrier material, a semiconductive material, e.g. is designed from or on a silicon substrate. The

Support material can be produced from a silicon wafer in a semiconductor process by means of various masking steps, etching steps, vapor deposition steps, etc. Instead of silicon, germanium can also be used. The semiconductor component can be produced in a method of semiconductor processing or microsystem technology processing. The functional layer for the sensor element (e.g., a lambda probe) may be e.g. a solid electrolyte layer, e.g. yttrium stabilized zirconium oxide (YSZ) supported by a variety of support structures

Untermembranen or membrane honeycomb is formed as a functional membrane. The semiconductor device may be understood as a functional element that may be housed in a larger device, e.g. a sensor element or in a

Fuel cell assembly is installed or installed.

Under a "membrane" or "sub-membrane" in the context of the present invention is basically an element with an arbitrary surface area and a defined thickness to understand, the thickness is preferably from 100 nm to 5 μηι,

particularly preferably from 300 nm to 1 μηι. The membrane or sub-membrane can, for example, for at least one or more substances in one direction

be permeable. For example, the membrane or the sub-membrane may be permeable to at least one or more substances in both directions. Other embodiments are conceivable in principle. The membrane has a plane transverse to its thickness. In this case, the membrane or extends

Sub-membrane in this plane by a multiple of the thickness of the membrane or the lower membrane. For example, the membrane extends in the plane at least 10 times its thickness, preferably at least 20 times its thickness, and most preferably at least 30 times its thickness. A sub-membrane has, in order to avoid tensions and cracks, an extension of at most 40 times its thickness.

The term "micromechanical" is generally used in the context of the present

Invention to understand a property of a three-dimensional structure, dimensions in the micrometer range, in particular in a range of 1 μηι to 1000 μηι,

exhibit. For example, these can be widths of caverns or lateral

Extensions of membranes, which are in this range. However, this does not rule out that additional larger or smaller dimensions may occur here. The trace may be e.g. have a thickness along a direction perpendicular to the plane of the membrane structure of 100nm to 10μηι, preferably a thickness in the range of 200nm to 2μηι.

The conductor track may, for example, have a width transverse to its direction of extension of 200 nm to 10 μm, preferably a width of 500 nm to 2 μm.

In comparison with the prior art, this positioning of the at least one strip conductors on the stability-providing support structures or on the front side of the support structure enables a fast and efficient temperature control. The arrangement of the at least one conductor track on the end face of the

Support structure does not reduce the active membrane area. At the same time, the stability of the membrane structure is not reduced, e.g. could be the case if one arranges the at least one trace on the membrane structure or the sub-membranes and reduces the support structures to obtain the same active membrane area. The

Supporting structure can thus advantageously take on a further function: in addition to the mechanical stabilization of the membrane structure, it serves as a carrier of a conductor formed as an electrical conductor. The two functions have no negative impact on each other. In this way, the benefits of the support structure increases advantageous. Further advantageously, the support structures are robust and stable carriers or provide the support structures a stable surface. In contrast to an arrangement of conductor tracks which are arranged on the membrane, a conductor track arranged on the front side of a support structure is very stable and robust against interruptions. For a diaphragm can be exposed to mechanical deformations, for example by pressure differences or mechanical stresses, more strongly than the front side of the diaphragm

Support structures. For example, a crack in a sub-membrane on which a conductor track is arranged could interrupt the conductor track and thus lead to a failure. If, however, the conductor track is arranged on the end face of the support structure, then a crack in the lower membrane will at least not impair the functionality of the conductor track.

Further advantageous is the arrangement of the conductor on the front side of the support structure overcoming relatively long distances parallel to the plane of the membrane structure in a single plane possible, namely the plane of the end face of the support structure. This advantageously simplifies the manufacturing process. Because there are no steps, e.g. between the level of the sub-membranes and the level of the

Face of the support structure to be overcome. When forming the at least one conductor track as a heating conductor track, the required heating power is reduced due to the thermal insulation through the membrane, e.g. Compared to the arrangement of a heating conductor on the surrounding the membrane structure bulk body of the semiconductor element. Because the fact that apart from the membrane only a very filigree support structure is heated less material volume must be heated. The heat output by the conductor can advantageously very targeted and by a skillful trace guidance on the support structure

evenly guided directly to the desired sub-membranes. As a result, the control dynamics for the temperature control is advantageously improved and it requires less power.

In the formation of the at least one conductor track as a temperature-detecting element, the temperature measurement can be carried out in the immediate vicinity of the desired position on the membrane structure. For this purpose, the at least one conductor track, for example, contain a material which has a high temperature coefficient. For example, the at least one conductor track may comprise platinum as the material. Then it is also suitable as a heating trace. The connection of the lower membrane with the support structure may be, for example, a cohesive connection. This can be achieved, for example, by a deposition process in semiconductor manufacturing processes between the support structure and the membrane structure. The support structure and the sub-membranes may also be materials which are already interconnected prior to the formation of the sub-membranes, for example, the membrane being released from the support structures by etching processes.

The support structures may support the sub-membranes along a direction that extends approximately parallel to the surface normal of the sub-membranes, ie, vertically. In this case, the sub-membranes are e.g. as at e.g. simratic or projection-like structures of the support structure. At the same time, however, the support structures can support the sub-membranes also parallel to the surface extension of the membrane surface and thus prevent cracking. This can e.g. be relevant when increase or decrease the dimensions of the sub-membranes due to heating or cooling. The support structures connected to the sub-membranes can then cushion these changes by their lateral support function so that the sub-membranes are not damaged. The support structure can sit or stand on a further structure in a direction perpendicular to the plane of the membrane structure underneath the membrane structure. However, the support structure can also hang freely between the sub-membranes without mechanical contact with other structures.

Advantageously, the contacting of the at least one conductor track takes place

Contact surfaces. Such contact surfaces may e.g. be arranged outside of the membrane structure on the bulk body. Thus, large contact surfaces can easily be created, which allow a reliable electrical connection of at least one conductor track.

According to a second aspect of the invention, a sensor element, in particular a solid electrolyte sensor element, for detecting at least one property of a

Measuring gas in a measuring gas space, in particular for detecting a portion of a

Gas component proposed in the sample gas or a temperature of the sample gas.

In this case, the sensor element comprises a semiconductor component according to the invention or the sensor element has a semiconductor component according to the invention. As a result, an improved temperature control dynamics can advantageously be achieved by a fast and efficient temperature control. Because for the regulation are one by the Invention provided fast-reacting heating and a fast-reacting and precise temperature measurement necessary. Also, the power required to achieve the required temperature can be advantageously reduced. Finally, the temperature distribution can be adjusted more homogeneously. This can increase the life of the sensor element and the reliability and accuracy of the

Sensor element can be increased.

In the context of the present invention, a "solid-state electrolyte" or a "solid electrolyte" is to be understood as a solid having electrolytic properties, that is to say having ion-conducting properties

Solid electrolyte or the solid electrolyte may be configured to conduct oxygen ions. For example, it may be a ceramic solid electrolyte. A "solid electrolyte sensor element" is generally understood to mean a sensor element which uses at least one solid electrolyte. The

Solid electrolyte sensor element may in particular be configured to

to detect at least one property of a gas in a measurement space,

in particular an oxygen content and / or an air ratio. Others too

However, solid-state electrolyte sensor elements are conceivable in principle.

According to a third aspect of the invention, a fuel cell assembly is proposed. In this case, the fuel cell arrangement comprises a semiconductor component according to the invention or the fuel cell arrangement has a semiconductor component according to the invention. This can advantageously an improved

Temperature control dynamics can be achieved by a fast and efficient temperature control. Also, the power required to achieve the required temperature can be advantageously reduced. Finally, the temperature distribution can be adjusted more homogeneously. This advantageously increases the efficiency of the

Fuel cell assembly, such as their energy yield and / or the conversion of a fuel on one side of the membrane structure and an oxidant on the other side of the membrane structure. Also, the life of the fuel cell assembly can be advantageously increased. A "fuel cell arrangement" is generally to be understood as a galvanic cell which has the chemical reaction energy of a preferably continuously fed fuel and an oxidizing agent in electrical

Energy is changing. The fuel may be e.g. Be hydrogen, but it may also be in the form of other combustible gases. As oxidizing agent or

Oxidant can e.g. Oxygen can be used. It can at the

Fuel cell arrangement, the fuel on one side of a membrane structure and the oxidant on another side of the membrane structure. The

Membrane can e.g. be formed as a solid electrolyte membrane. The

Fuel cell assembly may e.g. as micromechanical

Fuel cell assembly may be formed.

Advantageous developments of the invention are the subject of the dependent claims.

A refinement of the semiconductor component provides that at least two interconnects which are independent of one another and in particular are not connected in series are arranged on the end face of the support structure. This can advantageously be created redundancy. Falls e.g. one of the tracks, there is at least one other track that can compensate for the functionality (e.g., heating) of the failed track. Alternatively or additionally, the various

Tracks have different functions. Thus, e.g. one of the tracks have a heating function and serve to heat the membrane structure. Another trace may e.g. to detect the temperature, e.g. in form of

Temperature sensor. Again another trace may be e.g. serve for electrical contact or signal line. In this way, the support structures can be optimally used to serve as a support or substrate for various tracks. Thus, the available space in the plane parallel to the

Membrane structure can be optimally used. The conductor tracks or the plurality of conductor tracks are preferably connected in parallel. They can be particularly advantageously also different circuits, very particularly preferably be assigned to each other separate circuits or connected to it.

A refinement of the semiconductor component provides that the conductor track or the at least one conductor track is designed to be electrical or electronic

Contact components on the membrane structure electrically. As a result, the support structures can advantageously be used as a support or as a substrate for printed conductors, so as to also electrically contact electrical and / or electronic components arranged centrally in the membrane structure. So can such For example, components can be supplied with power or (electrical) signals can be routed to or from these components. Advantageously, the active membrane surface is thereby not reduced by interconnects running on the membrane structure itself.

Alternatively or additionally, the conductor track or the at least one conductor track can be configured as a heating conductor track to heat the membrane structure, wherein the

Conductor is particularly suitable for generating temperatures of at least 300 ° C or temperatures of at least 600 ° C. With this configuration, the membrane structure can be heated with particular accuracy and with low power. In contrast to a (partially) arranged on the membrane structure trace the membrane structure or the lower membrane is not exposed to the risk of damage by a very selective heating effect directly on the membrane structure. Also, the risk of a different thermal expansion of the membrane material and a conductor track arranged thereon with the associated thermal

Tensions eliminated. Finally, advantageously, the active membrane surface is not reduced by running on the membrane structure itself interconnects.

Alternatively or additionally, the conductor track or the at least one conductor track may be formed as a temperature detection element or as a temperature element and be adapted to detect a temperature. The temperature to be detected may be a temperature of the membrane structure. By means of this embodiment, the temperature of the membrane structure can be determined using a simple

Capture the production process with great precision. Because there are no steps between the level of the sub-membranes and the level of the face of the

Overcome support structure. Also, such a long life of

Temperature detection can be ensured because damage to the conductor, e.g. due to cracks in sub-membranes or deformation of sub-membranes is not possible. At the same time, the active membrane surface is not reduced by conductor tracks running on the membrane structure itself.

A development of the semiconductor device provides that the conductor has a length L along the end face of the support structure, wherein the length L corresponds to at least three times the diameter D of a lower membrane, in particular at least five times the diameter D of a lower membrane. The diameter D can be the longest extent of a sub-membrane in the plane of the lower membrane be understood. The diameter D of a sub-membrane is thereby

for example, at most 40 times its thickness, preferably at most 30 times its thickness. This advantageously provides e.g. a particularly efficient heating of the membrane structure by means of the conductor track is possible or a particularly accurate detection of the temperature of the membrane structure or more sub-membranes is possible. Even if the point to be heated or the point at which the temperature is to be detected, is arranged far from the edge of the membrane structure in the direction of the center of the membrane structure. Also, the contacting of electrical components that are far from

Edge of the membrane structure are arranged on the membrane structure is so advantageously possible. As the length increases, the production of such traces also becomes more economical since, e.g. in the production by means of photolithographic processes, the production of the required masks is easier and the proportion of not

used material of the conductor path advantageously decreases. If e.g. an expensive material such as When platinum or a platinum alloy or gold is used as the material for the trace (s) and the material is applied by a vapor deposition process, with longer trace lengths the proportion of material used to create traces (e.g., platinum or gold) increases. The detached with the photoresist, not remaining on the semiconductor device share, which must be recycled consuming, thereby decreases advantageous. Thus, the semiconductor device with increasing length of the conductor can be made more cost-effective.

A development of the semiconductor device provides that the support structure is formed from a plurality of wall-like support elements, wherein the support elements have a profile which is mechanically connected to the edge regions of the lower sides of the sub-membranes. This advantageously has the effect that the sub-membranes are arranged at defined locations of the support structures. It is also possible to advantageously achieve a hermetic seal of the membrane structure so that the two sides of the membrane structure can separate different spaces from one another, in particular in a gas-tight manner. Furthermore, the support effect or the effect of the mechanical stabilization of the membrane structure by the support structure is thereby significantly improved. The durability of the membrane structure is increased so advantageous. At the same time an improved decoupling of the sub-membranes and the conductor can be effected. Because the sub-membranes can be connected to the profile such that the connection ends significantly spaced from the end face of the support structure. To this In the case of mechanical and / or thermal stress, which acts on the lower membranes and thus also on the profile, an impairment of the

Conductor avoided advantageous and thus extends the life of the conductor. A refinement of the semiconductor component provides that the profile has a first section with a first width B1 and a second section with a second width B2. In this case, the first section faces the membrane structure. The second section adjoins the first section. In this case, the first section is arranged between the second section and the membrane structure. In this case, the first width B1 is greater than the second width B2. In this case, for example, the first width B1 can be at least twice as large as the second width B2. Particularly preferably, the first width B1 is at least three times as large as the second width B. In this case, the first width B1 and the second width B2 are respectively determined parallel to the membrane structure. This facilitates sealing of the membrane structure. Furthermore, a particularly good mechanical stabilization of the membrane structure is achieved. At the same time, a sufficient distance, e.g. a lateral distance, between the end face of the support structure and the edge of a lower membrane, which is adjacent to the conductor track, guaranteed. This provides for a beneficial

Decoupling of mechanical and / or thermal stress between the

Sub-membrane or the membrane structure and the conductor track through a sufficiently long relaxation path.

A development of the semiconductor device provides that the support structure and the membrane structure enclose a plurality of cavities. The support structure and membrane structure may e.g. be made micromechanically.

In this case, the cavities have at least one cross section parallel to the plane of the membrane structure, selected from the group consisting of: a triangle, a quadrilateral, a pentagon, a hexagon, a polygon, a circle. It can in a membrane structure and cavities with different

Cross section may be formed, for example, combined hexagons and triangles or combined hexagons and pentagons.

The cross-section may in particular have an average width of 5 μm to 100 μm, preferably from 10 μm to 50 μm, particularly preferably from 15 μm to 25 μm. Furthermore, the micromechanical support structure can have a height transversely, in particular perpendicular, to an extension direction of the micromechanical Solid electrolyte sensor element, in particular from 10 μηι to 200 μηι,

preferably from 20 μηι to 100 microns, more preferably from 30 μηι to 50 μηι have. Other dimensions are also conceivable. The micromechanical support structure may in particular be designed such that a reference gas space is formed in which one or more reference gases can be located.

A development of the semiconductor device provides that the support structure on the support structure facing side of the conductor an electrically insulating

Insulation layer, in particular, the insulating layer adjacent to the conductor track. This advantageously has the effect that the conductor track is electrically decoupled from the sub-membranes and from the support structures. Also, a thermal decoupling of the conductor of the semiconductor device is possible, thereby faster heating during heating can be achieved and it is less power needed for heating. In temperature acquisition, the temperature can be determined more precisely and quickly.

A thin adhesion promoter layer can be provided directly underneath the conductor track, it being possible for the adhesion promoter layer to be applied to the insulation layer. In the case where the adhesion promoter layer is of metallic design or has an electrical conductivity which is better than the insulation layer by at least a factor of 10, in the context of this application the adhesion promoter layer is considered to belong to the conductor track. For example, a thin compared to the wiring layer

Adhesive layer tantalum (Ta) include. On the primer layer, then e.g. a platinum (Pt) comprehensive conductor track layer may be arranged. The adhesion promoter layer or the tantalum layer can then be regarded as belonging to the conductor track if, under the tantalum layer, e.g. Silicon nitride (SiN) comprehensive support structure which acts as an insulating layer.

The term "insulation layer" in the context of the present invention basically designates a layer which is formed from an insulating material. This

Insulating material is configured to electrically and / or thermally insulate an area which the insulating material fills. In particular, that can

Insulating material be set up to carry a transfer of heat and / or

electrical currents at least largely avoided. For the Insulation material can be used at least one material selected from the group consisting of: silicon nitride, low-stress silicon nitride. The term "low-stress" designates basically in the context of the invention that the

low-stress silicon nitride is treated by an annealing step after deposition of the silicon nitride so that residual stresses are completely or at least partially degraded.

A development of the semiconductor component provides that the membrane structure is at least partially formed as a solid electrolyte membrane. As a result, the semiconductor component can be used particularly advantageously as a sensor for detecting at least one property of a gas or as a fuel cell arrangement.

A development of the semiconductor device provides that the end face of the support structure protrudes beyond the plane of the membrane structure. This allows a particularly simple production. At the same time, a (vertical) distance between the conductor track and the membrane structure can thus be created particularly advantageously. In this way, a decoupling of mechanical and / or thermal stress, which acts on the sub-membranes, can be effected particularly well by the conductor track. The life of the conductor can be increased so advantageous.

drawings

Other features and advantages of the present invention will become apparent to those skilled in the art from the following description of exemplary embodiments, which are not to be construed as limiting the invention with reference to the accompanying drawings.

FIG. 1 a shows a plan view of a detail of a semiconductor component according to the invention; FIG.

FIG. 1 b shows a plan view of an enlarged detail of the membrane structure and the support structure of the semiconductor component from FIG. 1 a; FIG. FIG. 1 c: a cross section through the membrane structure and the support structure of the semiconductor component from FIG. 1 b; FIG.

2 shows a perspective view of the membrane structure and the support structure with two conductor tracks of a semiconductor component according to the invention.

Figs. 1 a and 1 b show a plan view of an inventive semiconductor device 100. The semiconductor device 100 may be formed, for example, as a sensor element 900 or as a solid electrolyte sensor element 900 for detecting at least one property of a measurement gas in a measurement gas space. For example, the sensor element 900 can be used as a lambda probe in the exhaust gas system of a motor vehicle or as a knock sensor. The semiconductor component 100 can also be designed as a fuel cell 910 or as a fuel cell arrangement 910. The semiconductor device 100 in this case comprises a bulk body 1 10, which is formed as a semiconductor chip and, for example. May include silicon or germanium. An active region of the semiconductor device 100 is formed as a membrane structure 200. The membrane structure 200 is formed of a plurality of honeycomb-shaped

Sub-membranes 220 formed. The semiconductor device 100 further comprises a support structure 250 for mechanical stabilization of the membrane structure 200. In the illustrated embodiment, the sub-membranes 220 and the support structures 250 are formed like honeycombs in the form of regular hexagons. The honeycombs have a diameter D that is dimensioned through the center of the honeycomb from one of the six corners to the opposite corner. However, in principle, other honeycomb shapes are conceivable, for example generally polygons. For example, triangles, squares, pentagons or octagons are possible as well as circular honeycombs. In principle, it is also possible for different sub-membranes and the support structure delimiting them to have mutually different shapes. For example, triangles and hexagons or pentagons and hexagons can be combined. It is not necessary that they are regular polygons. The diameter D then corresponds in each case to the longest extent in the plane 205 of the lower membrane, in the case of a triangle the diameter corresponds to the longest triangular height of the three sides. On one end face 252 of the support structure 250, at least one conductor track 300, 302, 304 is arranged. For the sake of clarity in the figure is here, only Exactly one conductor 300, 302, 304 shown. A length L of

Conductor track 300, 302, 304 along the support structure corresponds to the sum of the partial lengths L, 'of the individual sections of the conductor track 300, 302, 304 on the support structure along the honeycomb boundary. Preferably, the length L is at least the

Three times the diameter D of the sub-membranes 220, most preferably at least five times the diameter D of the sub-membranes 220th

The sub-membranes 220 do not cover the end face 252. In other words, the end face 252 - when the conductor 300 is thought away - along the plane 205 of the membrane structure 200 and the sub-membranes 220 viewed between the

Sub-membranes 220 arranged and exposed. The end face 252 can project beyond the plane of the sub-membranes 220 perpendicular to the plane of the sub-membranes 220. In this case, the conductor track 300, 302, 304 runs along the honeycomb boundaries on the end face 252 of the support structure 250. The conductor track 300, 302, 304 does not leave the end face 252 of the support structure 250 in the region of the membrane structure 200. As a result, the support structure 250 is used as a carrier for the at least one interconnect 300 and the active area of the membrane structure 200 (perpendicular to the plane 205 of FIG

Membrane structure is considered) is not reduced. Because no conductor tracks 300, 302, 204 extend on the membrane structure 200. The conductor track 300, 302, 304 is

For example, to contact surfaces 1 12 on the bulk body 1 10 next to the

Membrane structure 200 out and electrically connected to these contact surfaces 1 12. Via the contact surfaces 1 12, the conductor 300, 302, 304 are supplied with power or it can be tapped off along the conductor 300, 302, 304 voltage between the contact surfaces 1 12 or general electrical signals can be tapped or sent.

It is of course conceivable that more than one conductor track 300, 302, 304 is arranged on the end face 252 of the support structure 250. In the presence of a plurality of interconnects 300, 302, 304, these interconnects are preferably connected in parallel or connected to different circuits.

The at least one conductor track 300 can serve for the electrical contacting of electrical or electronic components, not illustrated here, on the membrane structure 200. The at least one conductor 300 may alternatively or additionally be used as a heating conductor 302 for heating the membrane structure 200. For this purpose, the at least one heating conductor 302 is operated as a resistance conductor track. In this case, the heating conductor 302 can be designed, for example, for producing temperatures of at least 300 ° C. or temperatures of at least 600 ° C.

Alternatively or additionally, the at least one conductor 300 as

Temperature element 304 formed and adapted to detect a temperature, in particular a temperature of the membrane structure 200th

The conductor track 300, 302, 304 may comprise metallic material. It can e.g. a platinum alloy or platinum. The support structure 250 or at least the end face 252 of the support structure may be formed as an insulating layer 320, the

Electric current compared to the conductor significantly worse leads. These

Insulation layer 320 may be e.g. Silicon nitride (SiN) include. Between the support structure 250 and the insulation layer 320, an adhesion promoter layer can be arranged (not shown in the figures). This primer layer may e.g. Tantalum and have a thickness between 5nm and 250nm. The conductor track 300, 302, 304 may be covered by a protective layer (not illustrated here), which may prevent or at least slow down damage or corrosion of the conductor track 300. Such a protective layer may e.g. be made of titanium (Ti) or comprise at least titanium. The protective layer may cover in the manner of a crown only the front side of the conductor track 300, 302, 304. However, it can also cover the printed conductor 300, 302, 304 like a glaze, in particular completely or media-tightly.

FIG. 1 c shows that the sub-membranes 200 are connected to the support structure 250. The compound is preferably designed hermetically sealed. Irrespective of this, as described above, ions, if appropriate also only selectively, can diffuse through the membrane structure 200 or through individual sub-membranes 220. In this case, the sub-membranes 200 are connected to the support structure 250 at edge regions 230 of their undersides 224, for example. The support structure 250 is formed of a plurality of wall-like support members 260. In this case, the support elements 260 on a profile 270 which is mechanically connected to the edge regions 230 of the lower sides 224 of the lower membranes 220. The profile 270 has a first section 272 with a first width B1 and a second section 274 with a second width B2. The first section 272 faces the membrane structure 200. The second section 274 is adjacent to the first

Section 272. The first portion 272 is disposed between the second portion 274 and the membrane structure 200. In this case, the first width B1 is greater than the second width B2. Preferably, the first width B1 is at least twice as large as the second width B2 or even at least three times as large as the second width B2. The first width B1 and the second width B2 are each determined parallel to the membrane structure 200.

The support element 260 has a third section 276 on the side of the first section 272 facing away from the second section 274. The third section 276 protrudes beyond the profile 270. The end face 252 of the support structure 250 is the side of the third section 276 facing away from the first section 272. The third section 276 has a third width B3 on its end formed as end face 252. This third width may e.g. approximately equal to the second width B2, and thus may e.g. be smaller than the first width B1.

Figure 2 shows an embodiment for a semiconductor device 100, e.g. for a micromechanical sensor element 900 or as a solid electrolyte sensor element 900 or for a fuel cell 910 in perspective

Presentation. On the front side 252 of the support structure 250 are in this

Embodiment two interconnects 300a, 300b shown. One of the

Tracks 300a, 300b may be e.g. be designed as a heating conductor 302a, the other e.g. as a temperature element 304b. It can also both conductors

300a, 300b may be formed as heating tracks 302a, 302b, e.g. are connected in parallel. If one heating trace 302a fails, then the other would be

Heating trace 302b able to ensure the heating function. Thus, the lifetime of the semiconductor device 100 can be increased by this built-in redundancy. In principle, more than two conductor tracks 300a, 300b are conceivable, which extend on the end face 252 of the support structure 250, for example three, four, five, six or up to 30 tracks 300, 302, 304, which can be controlled independently of one another. In embodiments not shown here, at least one printed conductor 300, 302, 304 may alternatively or additionally be provided on an end face of the supporting structure 250 disposed at the other distal end of the support structure 250. In other words, such a trace 300, 302, 304 may extend below the sub-membranes 220. In Fig. 1 c could be such as a

Such conductor track 300, 302, 304 at the lower end in the figure of the second

Be arranged portions 274, ie on the end faces of the thorn-like downwardly projecting elements.

The proposed semiconductor device 100 with the heating conductor 200 or

For example, the proposed sensor element 900 including a semiconductor device 100 may be incorporated into sensor elements for electrochemical sensing elements, e.g. used for lambda probes. Lambda sensors can be used for recording or

Determination of an oxygen concentration in the exhaust gas of internal combustion engines can be used: The use in fuel cell 910 is conceivable. Finally, it should be noted that terms such as "comprising," "comprising," etc., do not exclude other elements, and terms such as "a" or "an" do not exclude a multitude. Thus, for reasons of readability, for example, the term "a printed circuit" is to be understood as synonymous with the expression "at least one printed circuit". By analogy, this also applies to other elements in this application, e.g. for the

Membrane structure and / or the support structure and / or the front side. It should also be appreciated that features described with reference to any of the above embodiments may also be used in combination with other features of other embodiments described above. Reference signs in the claims are not to be considered as limiting.

Claims

Claims:

Semiconductor component, in particular sensor element for detecting at least one property of a sample gas in a sample gas chamber, comprising

a membrane structure (200), wherein the membrane structure (200) is formed from a plurality of honeycomb-shaped sub-membranes (220),

a support structure (250) for mechanical stabilization of the membrane structure

(200)

wherein the sub - membranes (200), in particular at edge regions (230) of their undersides (224), are connected to the support structure (250), characterized in that at least one conductor track (300, 302, 304) on an end face (252) of the

Support structure (250) is arranged.

Semiconductor component according to Claim 1,

wherein on the end face (252) of the support structure (250) at least two mutually independent, in particular not connected in series, conductor tracks (300a, 300b, 302, 304) are arranged.

Semiconductor component according to Claim 1 or 2, characterized

wherein the conductor track (300) is configured to electrically contact electrical or electronic components on the membrane structure (200),

or

wherein the conductor track (300) is arranged as a heating conductor track (302), the

Heating membrane structure (200),

wherein the conductor track (302) is particularly suitable for generating temperatures of at least 300 ° C or temperatures of at least 600 ° C, or

wherein the conductor track (300) is designed as a temperature detection element (304) and is adapted to detect a temperature, in particular a temperature of the membrane structure (200). 4. Semiconductor component according to one of the preceding claims,

wherein the conductor track (300, 302, 304) has a length L along the end face (252) of the Supporting structure (250), wherein the length L corresponds to at least three times the diameter D of a lower membrane (220), in particular at least five times the diameter D of a lower membrane (220).

Semiconductor component according to one of the preceding claims,

wherein the support structure (250) consists of a plurality of wall-like support elements

(260) is formed,

wherein the support elements (260) have a profile (270) that matches the

Edge regions (230) of the lower sides (224) of the lower membranes (220) is mechanically connected.

Semiconductor component according to Claim 5,

wherein the profile (270) has a first section (272) with a first width B1 and a second section (274) with a second width B2,

wherein the first portion (272) faces the membrane structure (200), the second portion (274) contiguous with the first portion (272), the first portion (272) between the second portion (274) and the membrane structure (200 ) is arranged

wherein the first width B1 is greater than the second width B2, wherein the first width B1 is in particular at least twice as large as the second width B2, the first width B1 and the second width B2 respectively parallel to the

Membrane structure (200) can be determined.

Semiconductor component according to one of the preceding claims,

wherein the support structure (250) and the membrane structure (200) comprise a plurality of

Enclose cavities (280),

wherein the support structure (250) and the membrane structure (200) are made in particular micromechanically,

wherein the cavities (280) have at least one cross-section parallel to the plane of the membrane structure (200) selected from the group consisting of: a triangle,

a square,

a pentagon,

a hexagon,

a polygon,

a circle.

8. Semiconductor component according to one of the preceding claims, wherein the support structure (250) on the support structure (250) facing side of the conductor track (300, 302, 304) has an electrically insulating insulating layer (320),

wherein, in particular, the insulating layer (320) adjoins the conductor track (300, 302, 304).

9. Semiconductor component according to one of the preceding claims,

wherein the membrane structure (200) at least in sections as a

Solid electrolyte membrane is formed.

10. Semiconductor component according to one of the preceding claims,

wherein the end face (252) of the support structure (250) over the plane (205) of the

Membrane structure (200) protrudes.

1 1. Sensor element for detecting at least one property of a sample gas in a sample gas space, in particular for detecting a portion of a

Gas component in the measurement gas or a temperature of the measurement gas, wherein the sensor element (900) comprises a semiconductor device (100) according to any one of the preceding claims.

12. A fuel cell assembly, wherein the fuel cell assembly comprises a semiconductor device (100) according to any one of claims 1 to 10.