WO2017042179A1 - Composant à semi-conducteur - Google Patents

Composant à semi-conducteur Download PDF

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Publication number
WO2017042179A1
WO2017042179A1 PCT/EP2016/071010 EP2016071010W WO2017042179A1 WO 2017042179 A1 WO2017042179 A1 WO 2017042179A1 EP 2016071010 W EP2016071010 W EP 2016071010W WO 2017042179 A1 WO2017042179 A1 WO 2017042179A1
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WO
WIPO (PCT)
Prior art keywords
membrane
membrane structure
support structure
conductor track
semiconductor component
Prior art date
Application number
PCT/EP2016/071010
Other languages
German (de)
English (en)
Inventor
Torsten Kramer
Marc Wisniewski
Christian Doering
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2017042179A1 publication Critical patent/WO2017042179A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/4067—Means for heating or controlling the temperature of the solid electrolyte
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
    • G01N27/4071—Cells and probes with solid electrolytes for investigating or analysing gases using sensor elements of laminated structure
    • G01N27/4072—Cells and probes with solid electrolytes for investigating or analysing gases using sensor elements of laminated structure characterized by the diffusion barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/04—Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids
    • H01M8/04298—Processes for controlling fuel cells or fuel cell systems
    • H01M8/04313—Processes for controlling fuel cells or fuel cell systems characterised by the detection or assessment of variables; characterised by the detection or assessment of failure or abnormal function
    • H01M8/0438—Pressure; Ambient pressure; Flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00—Fuel cells; Manufacture thereof
    • H01M8/04—Auxiliary arrangements, e.g. for control of pressure or for circulation of fluids
    • H01M8/04298—Processes for controlling fuel cells or fuel cell systems
    • H01M8/04694—Processes for controlling fuel cells or fuel cell systems characterised by variables to be controlled
    • H01M8/04701—Temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30—Hydrogen technology
    • Y02E60/50—Fuel cells

Definitions

  • the invention relates to a semiconductor device and a sensor element with a
  • heating may be necessary or it may be necessary to increase the temperature of e.g. Accurately detect membrane structures.
  • a resistance heater or a temperature detection element for detecting a temperature may be provided for this purpose, for example, which is arranged around the surface to be heated.
  • a semiconductor device with a heating conductor is known from DE 197 42 696 A1.
  • the invention is based on the recognition that in current semiconductor components with high-temperature membrane structures, insulated conductor tracks are thermally and electrically required in relation to the bulk chip. These can be used for power line, heating and temperature measurement. It has been shown that it is not readily possible for such semiconductor components to position the printed conductors on the membrane structure, for example when the membrane structure is formed from a plurality of honeycomb-shaped sub-membranes. Therefore, such need Semiconductor devices a comparatively high performance and relatively much time, for example, to regulate the membrane temperature
  • Temperature control is a decisive advantage for high energy efficiency. There may therefore be a need to provide a semiconductor device in which a fast and precise temperature control by accurate heating and / or direct and rapid temperature detection is possible with the lowest possible power consumption.
  • a semiconductor device According to a first aspect of the invention, a semiconductor device
  • the membrane structure may for example be formed from a plurality of honeycomb-shaped sub-membranes, e.g. from at least 12 sub-membranes, preferably from at least 25 sub-membranes.
  • the semiconductor device further comprises a support structure for mechanical stabilization of the membrane structure, wherein the sub-membranes are connected to the support structure.
  • the sub-membranes may e.g. be connected to the support structures at the edge regions of their undersides. It is provided according to the invention that at least one conductor track is arranged on an end face of the support structure.
  • the at least one conductor track can be arranged, for example, on the first distal end, that is to say, for example, on the front side of the support structure adjacent to the upper side of the membrane. It may alternatively or additionally also be arranged on the second distal end, that is to say on the end face of the support structure facing away from the upper side of the membrane.
  • the conductor track may be formed such that it is in mechanical contact with the support structure in the region of the support structure or in the region of the membrane structure.
  • the conductor track can be designed such that it is arranged along its extent parallel to the plane of the membrane structure with the predominant part of its length on the front side of the support structure, preferably along its entire extension, particularly preferably along its entire extent in a plane parallel to the level of the membrane structure. It is thus not arranged in such a training on the membrane structure and thus not on one of
  • semiconductor component can be used
  • Component can be understood, which comprises at least as a carrier material, a semiconductive material, e.g. is designed from or on a silicon substrate.
  • Support material can be produced from a silicon wafer in a semiconductor process by means of various masking steps, etching steps, vapor deposition steps, etc. Instead of silicon, germanium can also be used.
  • the semiconductor component can be produced in a method of semiconductor processing or microsystem technology processing.
  • the functional layer for the sensor element e.g., a lambda probe
  • the semiconductor device may be understood as a functional element that may be housed in a larger device, e.g. a sensor element or in a
  • Fuel cell assembly is installed or installed.
  • membrane or “sub-membrane” in the context of the present invention is basically an element with an arbitrary surface area and a defined thickness to understand, the thickness is preferably from 100 nm to 5 ⁇ ,
  • the membrane or sub-membrane can, for example, for at least one or more substances in one direction
  • the membrane or the sub-membrane may be permeable to at least one or more substances in both directions.
  • Other embodiments are conceivable in principle.
  • the membrane has a plane transverse to its thickness. In this case, the membrane or extends
  • Sub-membrane in this plane by a multiple of the thickness of the membrane or the lower membrane.
  • the membrane extends in the plane at least 10 times its thickness, preferably at least 20 times its thickness, and most preferably at least 30 times its thickness.
  • a sub-membrane has, in order to avoid tensions and cracks, an extension of at most 40 times its thickness.
  • micromechanical is generally used in the context of the present
  • these can be widths of caverns or lateral
  • the trace may be e.g. have a thickness along a direction perpendicular to the plane of the membrane structure of 100nm to 10 ⁇ , preferably a thickness in the range of 200nm to 2 ⁇ .
  • the conductor track may, for example, have a width transverse to its direction of extension of 200 nm to 10 ⁇ m, preferably a width of 500 nm to 2 ⁇ m.
  • Support structure does not reduce the active membrane area. At the same time, the stability of the membrane structure is not reduced, e.g. could be the case if one arranges the at least one trace on the membrane structure or the sub-membranes and reduces the support structures to obtain the same active membrane area.
  • Supporting structure can thus advantageously take on a further function: in addition to the mechanical stabilization of the membrane structure, it serves as a carrier of a conductor formed as an electrical conductor.
  • the two functions have no negative impact on each other.
  • the support structures are robust and stable carriers or provide the support structures a stable surface.
  • a conductor track arranged on the front side of a support structure is very stable and robust against interruptions.
  • a crack in a sub-membrane on which a conductor track is arranged could interrupt the conductor track and thus lead to a failure. If, however, the conductor track is arranged on the end face of the support structure, then a crack in the lower membrane will at least not impair the functionality of the conductor track.
  • the at least one conductor track As a heating conductor track, the required heating power is reduced due to the thermal insulation through the membrane, e.g. Compared to the arrangement of a heating conductor on the surrounding the membrane structure bulk body of the semiconductor element. Because the fact that apart from the membrane only a very filigree support structure is heated less material volume must be heated. The heat output by the conductor can advantageously very targeted and by a skillful trace guidance on the support structure
  • control dynamics for the temperature control is advantageously improved and it requires less power.
  • the temperature measurement can be carried out in the immediate vicinity of the desired position on the membrane structure.
  • the at least one conductor track for example, contain a material which has a high temperature coefficient.
  • the at least one conductor track may comprise platinum as the material.
  • the connection of the lower membrane with the support structure may be, for example, a cohesive connection. This can be achieved, for example, by a deposition process in semiconductor manufacturing processes between the support structure and the membrane structure.
  • the support structure and the sub-membranes may also be materials which are already interconnected prior to the formation of the sub-membranes, for example, the membrane being released from the support structures by etching processes.
  • the support structures may support the sub-membranes along a direction that extends approximately parallel to the surface normal of the sub-membranes, ie, vertically.
  • the sub-membranes are e.g. as at e.g. simratic or projection-like structures of the support structure.
  • the support structures can support the sub-membranes also parallel to the surface extension of the membrane surface and thus prevent cracking. This can e.g. be relevant when increase or decrease the dimensions of the sub-membranes due to heating or cooling.
  • the support structures connected to the sub-membranes can then cushion these changes by their lateral support function so that the sub-membranes are not damaged.
  • the support structure can sit or stand on a further structure in a direction perpendicular to the plane of the membrane structure underneath the membrane structure. However, the support structure can also hang freely between the sub-membranes without mechanical contact with other structures.
  • the contacting of the at least one conductor track takes place
  • Such contact surfaces may e.g. be arranged outside of the membrane structure on the bulk body. Thus, large contact surfaces can easily be created, which allow a reliable electrical connection of at least one conductor track.
  • a sensor element in particular a solid electrolyte sensor element, for detecting at least one property of a
  • Measuring gas in a measuring gas space in particular for detecting a portion of a
  • the sensor element comprises a semiconductor component according to the invention or the sensor element has a semiconductor component according to the invention.
  • an improved temperature control dynamics can advantageously be achieved by a fast and efficient temperature control. Because for the regulation are one by the Invention provided fast-reacting heating and a fast-reacting and precise temperature measurement necessary. Also, the power required to achieve the required temperature can be advantageously reduced. Finally, the temperature distribution can be adjusted more homogeneously. This can increase the life of the sensor element and the reliability and accuracy of the
  • a "solid-state electrolyte” or a “solid electrolyte” is to be understood as a solid having electrolytic properties, that is to say having ion-conducting properties
  • Solid electrolyte or the solid electrolyte may be configured to conduct oxygen ions.
  • it may be a ceramic solid electrolyte.
  • a "solid electrolyte sensor element” is generally understood to mean a sensor element which uses at least one solid electrolyte.
  • Solid electrolyte sensor element may in particular be configured to
  • a fuel cell assembly is proposed.
  • the fuel cell arrangement comprises a semiconductor component according to the invention or the fuel cell arrangement has a semiconductor component according to the invention. This can advantageously an improved
  • Temperature control dynamics can be achieved by a fast and efficient temperature control. Also, the power required to achieve the required temperature can be advantageously reduced. Finally, the temperature distribution can be adjusted more homogeneously. This advantageously increases the efficiency of the
  • Fuel cell assembly such as their energy yield and / or the conversion of a fuel on one side of the membrane structure and an oxidant on the other side of the membrane structure. Also, the life of the fuel cell assembly can be advantageously increased.
  • a “fuel cell arrangement” is generally to be understood as a galvanic cell which has the chemical reaction energy of a preferably continuously fed fuel and an oxidizing agent in electrical
  • the fuel may be e.g. Be hydrogen, but it may also be in the form of other combustible gases.
  • oxidizing agent or
  • Oxidant can e.g. Oxygen can be used. It can at the
  • Fuel cell arrangement the fuel on one side of a membrane structure and the oxidant on another side of the membrane structure.
  • Membrane can e.g. be formed as a solid electrolyte membrane.
  • Fuel cell assembly may e.g. as micromechanical
  • Fuel cell assembly may be formed.
  • a refinement of the semiconductor component provides that at least two interconnects which are independent of one another and in particular are not connected in series are arranged on the end face of the support structure. This can advantageously be created redundancy. Falls e.g. one of the tracks, there is at least one other track that can compensate for the functionality (e.g., heating) of the failed track. Alternatively or additionally, the various interconnects which are independent of one another and in particular are not connected in series are arranged on the end face of the support structure. This can advantageously be created redundancy. Falls e.g. one of the tracks, there is at least one other track that can compensate for the functionality (e.g., heating) of the failed track. Alternatively or additionally, the various
  • Tracks have different functions. Thus, e.g. one of the tracks have a heating function and serve to heat the membrane structure. Another trace may e.g. to detect the temperature, e.g. in form of
  • Temperature sensor Again another trace may be e.g. serve for electrical contact or signal line.
  • the support structures can be optimally used to serve as a support or substrate for various tracks.
  • Membrane structure can be optimally used.
  • the conductor tracks or the plurality of conductor tracks are preferably connected in parallel. They can be particularly advantageously also different circuits, very particularly preferably be assigned to each other separate circuits or connected to it.
  • a refinement of the semiconductor component provides that the conductor track or the at least one conductor track is designed to be electrical or electronic
  • the support structures can advantageously be used as a support or as a substrate for printed conductors, so as to also electrically contact electrical and / or electronic components arranged centrally in the membrane structure. So can such For example, components can be supplied with power or (electrical) signals can be routed to or from these components.
  • the active membrane surface is thereby not reduced by interconnects running on the membrane structure itself.
  • the conductor track or the at least one conductor track can be configured as a heating conductor track to heat the membrane structure, wherein the
  • Conductor is particularly suitable for generating temperatures of at least 300 ° C or temperatures of at least 600 ° C.
  • the membrane structure can be heated with particular accuracy and with low power.
  • a (partially) arranged on the membrane structure trace the membrane structure or the lower membrane is not exposed to the risk of damage by a very selective heating effect directly on the membrane structure. Also, the risk of a different thermal expansion of the membrane material and a conductor track arranged thereon with the associated thermal
  • the conductor track or the at least one conductor track may be formed as a temperature detection element or as a temperature element and be adapted to detect a temperature.
  • the temperature to be detected may be a temperature of the membrane structure.
  • Temperature detection can be ensured because damage to the conductor, e.g. due to cracks in sub-membranes or deformation of sub-membranes is not possible. At the same time, the active membrane surface is not reduced by conductor tracks running on the membrane structure itself.
  • the conductor has a length L along the end face of the support structure, wherein the length L corresponds to at least three times the diameter D of a lower membrane, in particular at least five times the diameter D of a lower membrane.
  • the diameter D can be the longest extent of a sub-membrane in the plane of the lower membrane be understood. The diameter D of a sub-membrane is thereby
  • Edge of the membrane structure are arranged on the membrane structure is so advantageously possible. As the length increases, the production of such traces also becomes more economical since, e.g. in the production by means of photolithographic processes, the production of the required masks is easier and the proportion of not
  • the used material of the conductor path advantageously decreases. If e.g. an expensive material such as When platinum or a platinum alloy or gold is used as the material for the trace (s) and the material is applied by a vapor deposition process, with longer trace lengths the proportion of material used to create traces (e.g., platinum or gold) increases. The detached with the photoresist, not remaining on the semiconductor device share, which must be recycled consuming, thereby decreases advantageous. Thus, the semiconductor device with increasing length of the conductor can be made more cost-effective.
  • an expensive material such as When platinum or a platinum alloy or gold is used as the material for the trace (s) and the material is applied by a vapor deposition process, with longer trace lengths the proportion of material used to create traces (e.g., platinum or gold) increases. The detached with the photoresist, not remaining on the semiconductor device share, which must be recycled consuming, thereby decreases advantageous. Thus, the semiconductor device with increasing length of the conductor can be made more cost-effective.
  • the support structure is formed from a plurality of wall-like support elements, wherein the support elements have a profile which is mechanically connected to the edge regions of the lower sides of the sub-membranes.
  • This advantageously has the effect that the sub-membranes are arranged at defined locations of the support structures.
  • the support effect or the effect of the mechanical stabilization of the membrane structure by the support structure is thereby significantly improved.
  • the durability of the membrane structure is increased so advantageous.
  • an improved decoupling of the sub-membranes and the conductor can be effected. Because the sub-membranes can be connected to the profile such that the connection ends significantly spaced from the end face of the support structure. To this In the case of mechanical and / or thermal stress, which acts on the lower membranes and thus also on the profile, an impairment of the
  • a refinement of the semiconductor component provides that the profile has a first section with a first width B1 and a second section with a second width B2.
  • the first section faces the membrane structure.
  • the second section adjoins the first section.
  • the first section is arranged between the second section and the membrane structure.
  • the first width B1 is greater than the second width B2.
  • the first width B1 can be at least twice as large as the second width B2.
  • the first width B1 is at least three times as large as the second width B.
  • the first width B1 and the second width B2 are respectively determined parallel to the membrane structure. This facilitates sealing of the membrane structure.
  • a development of the semiconductor device provides that the support structure and the membrane structure enclose a plurality of cavities.
  • the support structure and membrane structure may e.g. be made micromechanically.
  • the cavities have at least one cross section parallel to the plane of the membrane structure, selected from the group consisting of: a triangle, a quadrilateral, a pentagon, a hexagon, a polygon, a circle. It can in a membrane structure and cavities with different cross section parallel to the plane of the membrane structure, selected from the group consisting of: a triangle, a quadrilateral, a pentagon, a hexagon, a polygon, a circle. It can in a membrane structure and cavities with different
  • Cross section may be formed, for example, combined hexagons and triangles or combined hexagons and pentagons.
  • the cross-section may in particular have an average width of 5 ⁇ m to 100 ⁇ m, preferably from 10 ⁇ m to 50 ⁇ m, particularly preferably from 15 ⁇ m to 25 ⁇ m.
  • the micromechanical support structure can have a height transversely, in particular perpendicular, to an extension direction of the micromechanical Solid electrolyte sensor element, in particular from 10 ⁇ to 200 ⁇ ,
  • micromechanical support structure may in particular be designed such that a reference gas space is formed in which one or more reference gases can be located.
  • a development of the semiconductor device provides that the support structure on the support structure facing side of the conductor an electrically insulating
  • Insulation layer in particular, the insulating layer adjacent to the conductor track.
  • a thin adhesion promoter layer can be provided directly underneath the conductor track, it being possible for the adhesion promoter layer to be applied to the insulation layer.
  • the adhesion promoter layer is of metallic design or has an electrical conductivity which is better than the insulation layer by at least a factor of 10
  • the adhesion promoter layer is considered to belong to the conductor track.
  • Adhesive layer tantalum include. On the primer layer, then e.g. a platinum (Pt) comprehensive conductor track layer may be arranged. The adhesion promoter layer or the tantalum layer can then be regarded as belonging to the conductor track if, under the tantalum layer, e.g. Silicon nitride (SiN) comprehensive support structure which acts as an insulating layer.
  • a platinum (Pt) comprehensive conductor track layer may be arranged on the primer layer.
  • the adhesion promoter layer or the tantalum layer can then be regarded as belonging to the conductor track if, under the tantalum layer, e.g. Silicon nitride (SiN) comprehensive support structure which acts as an insulating layer.
  • SiN Silicon nitride
  • insulation layer in the context of the present invention basically designates a layer which is formed from an insulating material.
  • Insulating material is configured to electrically and / or thermally insulate an area which the insulating material fills.
  • Insulating material be set up to carry a transfer of heat and / or
  • Insulation material can be used at least one material selected from the group consisting of: silicon nitride, low-stress silicon nitride.
  • low-stress designates basically in the context of the invention that the
  • low-stress silicon nitride is treated by an annealing step after deposition of the silicon nitride so that residual stresses are completely or at least partially degraded.
  • the semiconductor component provides that the membrane structure is at least partially formed as a solid electrolyte membrane.
  • the semiconductor component can be used particularly advantageously as a sensor for detecting at least one property of a gas or as a fuel cell arrangement.
  • a development of the semiconductor device provides that the end face of the support structure protrudes beyond the plane of the membrane structure. This allows a particularly simple production. At the same time, a (vertical) distance between the conductor track and the membrane structure can thus be created particularly advantageously. In this way, a decoupling of mechanical and / or thermal stress, which acts on the sub-membranes, can be effected particularly well by the conductor track. The life of the conductor can be increased so advantageous.
  • FIG. 1 a shows a plan view of a detail of a semiconductor component according to the invention
  • FIG. 1 b shows a plan view of an enlarged detail of the membrane structure and the support structure of the semiconductor component from FIG. 1 a;
  • FIG. FIG. 1 c a cross section through the membrane structure and the support structure of the semiconductor component from FIG. 1 b;
  • FIG. 1 b shows a plan view of an enlarged detail of the membrane structure and the support structure of the semiconductor component from FIG. 1 a;
  • FIG. 1 c shows a cross section through the membrane structure and the support structure of the semiconductor component from FIG. 1 b;
  • FIG. 2 shows a perspective view of the membrane structure and the support structure with two conductor tracks of a semiconductor component according to the invention.
  • Figs. 1 a and 1 b show a plan view of an inventive semiconductor device 100.
  • the semiconductor device 100 may be formed, for example, as a sensor element 900 or as a solid electrolyte sensor element 900 for detecting at least one property of a measurement gas in a measurement gas space.
  • the sensor element 900 can be used as a lambda probe in the exhaust gas system of a motor vehicle or as a knock sensor.
  • the semiconductor component 100 can also be designed as a fuel cell 910 or as a fuel cell arrangement 910.
  • the semiconductor device 100 in this case comprises a bulk body 1 10, which is formed as a semiconductor chip and, for example. May include silicon or germanium.
  • An active region of the semiconductor device 100 is formed as a membrane structure 200.
  • the membrane structure 200 is formed of a plurality of honeycomb-shaped
  • Sub-membranes 220 formed.
  • the semiconductor device 100 further comprises a support structure 250 for mechanical stabilization of the membrane structure 200.
  • the sub-membranes 220 and the support structures 250 are formed like honeycombs in the form of regular hexagons.
  • the honeycombs have a diameter D that is dimensioned through the center of the honeycomb from one of the six corners to the opposite corner.
  • other honeycomb shapes are conceivable, for example generally polygons. For example, triangles, squares, pentagons or octagons are possible as well as circular honeycombs.
  • the diameter D then corresponds in each case to the longest extent in the plane 205 of the lower membrane, in the case of a triangle the diameter corresponds to the longest triangular height of the three sides.
  • On one end face 252 of the support structure 250 at least one conductor track 300, 302, 304 is arranged. For the sake of clarity in the figure is here, only Exactly one conductor 300, 302, 304 shown.
  • Conductor track 300, 302, 304 along the support structure corresponds to the sum of the partial lengths L, 'of the individual sections of the conductor track 300, 302, 304 on the support structure along the honeycomb boundary.
  • the length L is at least the
  • the sub-membranes 220 do not cover the end face 252. In other words, the end face 252 - when the conductor 300 is thought away - along the plane 205 of the membrane structure 200 and the sub-membranes 220 viewed between the
  • Sub-membranes 220 arranged and exposed.
  • the end face 252 can project beyond the plane of the sub-membranes 220 perpendicular to the plane of the sub-membranes 220.
  • the conductor track 300, 302, 304 runs along the honeycomb boundaries on the end face 252 of the support structure 250.
  • the conductor track 300, 302, 304 does not leave the end face 252 of the support structure 250 in the region of the membrane structure 200.
  • the support structure 250 is used as a carrier for the at least one interconnect 300 and the active area of the membrane structure 200 (perpendicular to the plane 205 of FIG
  • Membrane structure 200 out and electrically connected to these contact surfaces 1 12. Via the contact surfaces 1 12, the conductor 300, 302, 304 are supplied with power or it can be tapped off along the conductor 300, 302, 304 voltage between the contact surfaces 1 12 or general electrical signals can be tapped or sent.
  • interconnects 300, 302, 304 are preferably connected in parallel or connected to different circuits.
  • the at least one conductor track 300 can serve for the electrical contacting of electrical or electronic components, not illustrated here, on the membrane structure 200.
  • the at least one conductor 300 may alternatively or additionally be used as a heating conductor 302 for heating the membrane structure 200.
  • the at least one heating conductor 302 is operated as a resistance conductor track.
  • the heating conductor 302 can be designed, for example, for producing temperatures of at least 300 ° C. or temperatures of at least 600 ° C.
  • the at least one conductor 300 as
  • Temperature element 304 formed and adapted to detect a temperature, in particular a temperature of the membrane structure 200th
  • the conductor track 300, 302, 304 may comprise metallic material. It can e.g. a platinum alloy or platinum.
  • the support structure 250 or at least the end face 252 of the support structure may be formed as an insulating layer 320, the
  • Insulation layer 320 may be e.g. Silicon nitride (SiN) include. Between the support structure 250 and the insulation layer 320, an adhesion promoter layer can be arranged (not shown in the figures). This primer layer may e.g. Tantalum and have a thickness between 5nm and 250nm.
  • the conductor track 300, 302, 304 may be covered by a protective layer (not illustrated here), which may prevent or at least slow down damage or corrosion of the conductor track 300.
  • a protective layer may e.g. be made of titanium (Ti) or comprise at least titanium.
  • the protective layer may cover in the manner of a crown only the front side of the conductor track 300, 302, 304. However, it can also cover the printed conductor 300, 302, 304 like a glaze, in particular completely or media-tightly.
  • FIG. 1 c shows that the sub-membranes 200 are connected to the support structure 250.
  • the compound is preferably designed hermetically sealed. Irrespective of this, as described above, ions, if appropriate also only selectively, can diffuse through the membrane structure 200 or through individual sub-membranes 220.
  • the sub-membranes 200 are connected to the support structure 250 at edge regions 230 of their undersides 224, for example.
  • the support structure 250 is formed of a plurality of wall-like support members 260.
  • the support elements 260 on a profile 270 which is mechanically connected to the edge regions 230 of the lower sides 224 of the lower membranes 220.
  • the profile 270 has a first section 272 with a first width B1 and a second section 274 with a second width B2.
  • the first section 272 faces the membrane structure 200.
  • the second section 274 is adjacent to the first
  • the first portion 272 is disposed between the second portion 274 and the membrane structure 200.
  • the first width B1 is greater than the second width B2.
  • the first width B1 is at least twice as large as the second width B2 or even at least three times as large as the second width B2.
  • the first width B1 and the second width B2 are each determined parallel to the membrane structure 200.
  • the support element 260 has a third section 276 on the side of the first section 272 facing away from the second section 274.
  • the third section 276 protrudes beyond the profile 270.
  • the end face 252 of the support structure 250 is the side of the third section 276 facing away from the first section 272.
  • the third section 276 has a third width B3 on its end formed as end face 252. This third width may e.g. approximately equal to the second width B2, and thus may e.g. be smaller than the first width B1.
  • Figure 2 shows an embodiment for a semiconductor device 100, e.g. for a micromechanical sensor element 900 or as a solid electrolyte sensor element 900 or for a fuel cell 910 in perspective
  • Embodiment two interconnects 300a, 300b shown.
  • Tracks 300a, 300b may be e.g. be designed as a heating conductor 302a, the other e.g. as a temperature element 304b. It can also both conductors
  • 300a, 300b may be formed as heating tracks 302a, 302b, e.g. are connected in parallel. If one heating trace 302a fails, then the other would be
  • Heating trace 302b able to ensure the heating function.
  • the lifetime of the semiconductor device 100 can be increased by this built-in redundancy.
  • more than two conductor tracks 300a, 300b are conceivable, which extend on the end face 252 of the support structure 250, for example three, four, five, six or up to 30 tracks 300, 302, 304, which can be controlled independently of one another.
  • at least one printed conductor 300, 302, 304 may alternatively or additionally be provided on an end face of the supporting structure 250 disposed at the other distal end of the support structure 250.
  • such a trace 300, 302, 304 may extend below the sub-membranes 220.
  • Fig. 1 c could be such as a
  • the proposed sensor element 900 including a semiconductor device 100 may be incorporated into sensor elements for electrochemical sensing elements, e.g. used for lambda probes. Lambda sensors can be used for recording or

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Abstract

L'invention concerne un composant à semi-conducteur (100), en particulier un élément de détection (900) pour la détection d'au moins une caractéristique d'un gaz à mesurer dans un espace de gaz à mesurer. Le composant à semi-conducteur (100) comporte une structure de membrane (200), la structure de membrane (200) étant en particulier formée à partir d'une pluralité de sous-membranes (200) en forme de nid d'abeilles. Le composant à semi-conducteur (100) comporte en outre une structure de support (250) pour la stabilisation mécanique de la structure de membrane (200), les sous-membranes (200), en particulier au niveau de régions de bord (230) de leurs faces inférieures (224), étant reliées à la structure de support (250). Selon l'invention, afin de pouvoir mettre la structure à membrane (200) en contact électrique plus facilement, ou de pouvoir chauffer plus uniformément la structure de membrane (200), ou de pouvoir détecter plus précisément la température de la structure de membrane (200), au moins un tracé conducteur (300, 302, 304) est disposé sur une face frontale (252) de la structure de support (250).
PCT/EP2016/071010 2015-09-10 2016-09-07 Composant à semi-conducteur WO2017042179A1 (fr)

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DE102015217298.8 2015-09-10
DE102015217298.8A DE102015217298A1 (de) 2015-09-10 2015-09-10 Halbleiter-Bauelement

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19742696A1 (de) 1997-09-26 1999-05-06 Siemens Matsushita Components Bauelement mit planarer Leiterbahn
WO2005030376A1 (fr) * 2003-09-23 2005-04-07 Lilliputian Systems, Inc. Îlots de membranes à couche mince soumises à une contrainte
WO2013190164A1 (fr) * 2012-06-21 2013-12-27 Consejo Superior De Investigaciones Científicas (Csic) Membrane électrolytique à oxyde solide placée sur un support comportant des nervures de silicium dopé pour des applications dans des micropiles à combustible à oxyde solide
US20140262838A1 (en) * 2013-03-12 2014-09-18 Robert Bosch Gmbh Microelectrochemical Sensor and Method for Operating a Microelectrochemical Sensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59009246D1 (de) * 1990-07-04 1995-07-20 Siemens Ag Sauerstoffsensor mit halbleitendem Galliumoxid.
DE4428155C2 (de) * 1994-08-09 1996-12-19 Siemens Ag Verfahren zur Herstellung eines Gassensors
DE10356507B4 (de) * 2003-12-03 2012-01-26 Robert Bosch Gmbh Gefederte mikromechanische Struktur und Verfahren zu ihrer Herstellung
DE102005023699B4 (de) * 2005-05-23 2013-11-07 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements mit einer Membran
DE102012201304A1 (de) * 2012-01-31 2013-08-01 Robert Bosch Gmbh Mikromechanische Feststoffelektrolyt-Sensorvorrichtung und entsprechendes Herstellungsverfahren

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19742696A1 (de) 1997-09-26 1999-05-06 Siemens Matsushita Components Bauelement mit planarer Leiterbahn
WO2005030376A1 (fr) * 2003-09-23 2005-04-07 Lilliputian Systems, Inc. Îlots de membranes à couche mince soumises à une contrainte
WO2013190164A1 (fr) * 2012-06-21 2013-12-27 Consejo Superior De Investigaciones Científicas (Csic) Membrane électrolytique à oxyde solide placée sur un support comportant des nervures de silicium dopé pour des applications dans des micropiles à combustible à oxyde solide
US20140262838A1 (en) * 2013-03-12 2014-09-18 Robert Bosch Gmbh Microelectrochemical Sensor and Method for Operating a Microelectrochemical Sensor

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