WO2017039129A1 - Procédé de fabrication d'une électrode transparente pourvue d'une électrode de câblage - Google Patents

Procédé de fabrication d'une électrode transparente pourvue d'une électrode de câblage Download PDF

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Publication number
WO2017039129A1
WO2017039129A1 PCT/KR2016/006519 KR2016006519W WO2017039129A1 WO 2017039129 A1 WO2017039129 A1 WO 2017039129A1 KR 2016006519 W KR2016006519 W KR 2016006519W WO 2017039129 A1 WO2017039129 A1 WO 2017039129A1
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Prior art keywords
pattern
electrode
photoresist
wiring
region
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PCT/KR2016/006519
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English (en)
Korean (ko)
Inventor
정성일
김판겸
권영우
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한국전기연구원
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Publication of WO2017039129A1 publication Critical patent/WO2017039129A1/fr

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

Definitions

  • the present invention relates to a method for manufacturing a transparent electrode having a wiring electrode, and more particularly, a block wiring electrode in which at least one wiring electrode activated by the electrode is electrically coupled, and a sensor electrode activated by the electrode in a one-time process.
  • the present invention relates to a method for manufacturing a transparent electrode having a wiring electrode capable of simultaneously satisfying a filling characteristic of an electrode material and an alignment work characteristic of the wiring electrode and the sensor electrode.
  • the touch panel may be divided into an active area (or an effective area) that detects a position of the input device, and an inactive area (or a dummy area) that is positioned outside the active area.
  • a transparent electrode may be formed in the active region to detect an input device, and a wiring connected to the transparent electrode and a printed circuit board connecting the wiring to an external circuit may be positioned in the inactive region.
  • the sensor electrode corresponding to the active area of the touch panel has a line width of 3 ⁇ m or more, a pattern depth of 3 ⁇ m or less, and the pattern pitch is determined in a range of 100 to 150 times the line width in consideration of the transparency of the electrode pattern.
  • the wiring electrode corresponding to the inactive region of the touch panel has a line width of several hundred micrometers or more and the depth of the pattern is the same as that of the sensor electrode.
  • the present invention has been invented to solve the above problems, and by implementing a block wiring electrode and a sensor electrode that is activated as an electrode, the wiring that can satisfy the filling characteristics of the electrode material and the alignment operation characteristics of the wiring electrode and the sensor electrode at the same time It is an object of the present invention to provide a method for manufacturing a transparent electrode having an electrode.
  • the second phase transition mask is positioned, and then exposed and plated to form a mesh pattern metal specimen having a mesh pattern thereon, the sensor pattern having a sensor pattern having a relatively wide pitch.
  • a mesh pattern forming step comprising a wiring pattern region having a wiring pattern of a region and a relatively narrow pitch; And forming a block wiring electrode in which at least one wiring electrode activated by the electrode of the wiring pattern region is electrically coupled using the mesh pattern metal specimen, and forming a sensor electrode activated by the electrode of the sensor pattern region.
  • Technical method for manufacturing a transparent electrode having a wiring electrode characterized in that comprising; step.
  • the phase shift mask comprises the steps of: preparing a chrome mask having a chromium pattern formed of a first pattern region having a relatively wide line width and a second pattern region having a relatively narrow line width; Coating a photoresist on the substrate, and then placing the chrome mask to expose and develop a photoresist pattern; And separating a phase transfer mask from the substrate on which the photoresist pattern is formed by pouring a polymer material on the substrate on which the photoresist pattern is formed and performing thermosetting.
  • the pattern height of the phase shift mask is characterized in that the range of 1 ⁇ 10 ⁇ m.
  • the phase shift mask has a first pattern region having a relatively wide line width and a second pattern region having a relatively narrow line width, and the first pattern region of the phase transition mask corresponds to the sensor pattern region, and the phase transition.
  • the second pattern region of the mask corresponds to the wiring pattern region.
  • the one-way pattern forming step the step of applying a photosensitive agent on the substrate; Placing a first phase transfer mask on the substrate to which the photosensitive agent is applied, and then irradiating ultraviolet rays to form a first relief photosensitive pattern in one direction; Forming a first plating layer on the substrate on which the first relief photosensitive pattern is formed, and then separating the first one-way pattern metal specimen having the intaglio pattern from the substrate on which the first relief photosensitive pattern is formed; And forming a second plating layer on the first one-way pattern metal specimen on which the intaglio pattern is formed, and then separating the second one-way pattern metal specimen on which the relief pattern is formed from the first one-way pattern metal specimen. It is done.
  • the mesh pattern forming step the step of applying a photosensitive agent on top of the one-way pattern metal specimen in which the pattern is formed in one direction; Placing the second phase transfer mask on the one-way pattern metal specimen coated with the photosensitive agent, and then irradiating ultraviolet rays to form a second relief photosensitive pattern on the one-way pattern metal specimen; And forming a third plating layer on the metal specimen on which the second relief photosensitive pattern is formed, and then separating the first mesh pattern metal specimen on which the negative mesh pattern is formed from the metal specimen on which the second relief photosensitive pattern is formed. Characterized in that.
  • the electrode forming step the step of applying a photosensitive agent on the mesh pattern metal specimen; Placing a chrome mask on the mesh pattern metal specimen coated with the photoresist, and exposing and developing the photoresist to partially remove and pattern the photoresist of the sensor electrode region where the sensor electrode is formed and the wiring electrode region where the wiring electrode is formed; Forming a fourth plating layer on the mesh pattern metal specimen on which the photoresist is patterned, and then separating a metal stamp having an embossed pattern from the mesh pattern metal specimen on which the photoresist is patterned; And covering the liquid polymer and the film sequentially on the metal stamp on which the relief pattern is formed, and then separating the film having the intaglio pattern from the metal stamp on which the relief pattern is formed.
  • the surface of the photoresist in the remaining regions except for the partially removed photoresist is flat. Reflowing in 100 ⁇ 160 °C, 30 seconds ⁇ 3 minutes to lose; characterized in that it further comprises.
  • the electrode forming step the step of applying a photosensitive agent on the mesh pattern metal specimen; After placing the chromium mask on the mesh pattern metal specimen coated with the photoresist, the photoresist of the remaining region except for the photoresist of the sensor electrode region in which the sensor electrode is formed and the wiring electrode region in which the wiring electrode is formed is exposed and developed.
  • the photoresist layer consisting of a photoresist except for the metal deposit deposited in the region where the photoresist is partially removed by adding to the photoresist removal liquid, and the top of the photoresist layer Removing the metal deposition layer deposited on the;
  • the fourth plating layer on the mesh pattern metal specimen from which the photoresist layer and the metal deposition layer have been removed, separating the metal stamp having the embossed pattern from the mesh pattern metal specimen from which the photoresist layer and the metal deposition layer have been removed. step; And covering the liquid polymer and the film sequentially on the metal stamp on which the relief pattern is formed, and then separating the film having the intaglio pattern from the metal stamp on which the relief pattern is formed.
  • the photoresist is applied in a spin coating or spray coating method
  • the spin coating is the thickness of the photosensitive agent is applied according to the viscosity of the photosensitive agent and the rotational speed of the spin coating Is controlled
  • the spray coating is characterized in that the thickness of the photosensitive agent is applied according to the viscosity of the photosensitive agent and the injection amount of the photosensitive agent.
  • the step of filling the electrode material in the intaglio pattern characterized in that it further comprises.
  • the plating is characterized in that the nickel plating or nickel alloy plating.
  • the sensor electrode and the wiring electrode characterized in that formed in the same line width.
  • the sensor electrode has a line width of 2 ⁇ m or less, and the pitch between the sensor electrode and the sensor electrode is 100 times or more than the line width, so that light transmittance characteristics are improved.
  • the wiring electrode has a line width of 2 ⁇ m or less, and the pitch between the wiring electrode and the wiring electrode is characterized in that 40 times or less of the line width.
  • the block wiring electrode is a wiring electrode in which at least one wiring electrode is electrically coupled to form a block, and the wiring electrode in the block wiring electrode has a line width of 2 ⁇ m or less, and the wiring electrode and the wiring electrode.
  • the pitch between is characterized in that 40 times or less of the line width.
  • the transparent electrode is characterized in that the flexible PCB electrically connected to the block wiring electrode is formed integrally.
  • the sensor electrode and the wiring electrode are formed to have the same line width, the sensor electrode and the wiring electrode can satisfy the filling characteristics of the electrode material such as Ag paste.
  • the sensor electrode has a line width of 2 ⁇ m or less, and by having a pitch between the sensor electrode and the sensor electrode 100 times or more, the light transmittance characteristics can be improved.
  • the wiring electrode has a line width of 2 ⁇ m or less, and the pitch between the wiring electrode and the wiring electrode is 40 times or less of the line width, thereby improving the electrical characteristics.
  • FIG. 1 is a conceptual diagram for explaining the terms according to a preferred embodiment of the present invention.
  • FIG. 2 is a flow chart according to a preferred embodiment of the present invention.
  • FIG. 3 is a flowchart of a phase shift mask preparation step according to a preferred embodiment of the present invention.
  • Figure 4 is a flow chart of one-way pattern forming step according to a preferred embodiment of the present invention.
  • FIG. 5 is a photograph of a one-way pattern metal specimen according to a preferred embodiment of the present invention.
  • FIG. 6 is a flow chart of the mesh pattern forming step according to a preferred embodiment of the present invention.
  • FIG. 7 is a photograph of a mesh pattern metal specimen according to a preferred embodiment of the present invention.
  • FIG. 8 is an exemplary view of applying a photosensitive agent according to a preferred embodiment of the present invention.
  • FIG. 9 is an exemplary view of partially removing and patterning a photoresist in accordance with a preferred embodiment of the present invention.
  • FIG. 10 is a diagram illustrating a step of separating a metal stamp in accordance with a preferred embodiment of the present invention.
  • FIG. 11 is an exemplary view illustrating a step of separating a film having an intaglio pattern in accordance with a preferred embodiment of the present invention.
  • Figure 12 is an exemplary view of the step of filling the electrode material in accordance with a preferred embodiment of the present invention.
  • Figure 13 is an illustration of film production using the second mesh pattern metal specimen in accordance with a preferred embodiment of the present invention.
  • FIG. 14 is an exemplary view of film production according to a preferred embodiment of the present invention.
  • 15 is a conceptual diagram of a conventional touch module.
  • 16 is a conceptual diagram of an FPCB integrated module according to a preferred embodiment of the present invention.
  • FIG. 1 is a conceptual diagram for explanation of terms according to a preferred embodiment of the present invention.
  • 1- (a) shows the mesh pattern metal specimen, and FIG. 1- (b) shows the patterned state after the photosensitive agent is applied to the mesh pattern metal specimen of FIG. 1- (a).
  • First phase transition mask It is divided into a first pattern region having a relatively wide line width and a second pattern region having a relatively narrow line width.
  • Second phase transition mask The pattern is implemented in a direction orthogonal to the first phase transition mask, and is divided into a first pattern region having a relatively wide line width and a second pattern region having a relatively narrow line width.
  • Mesh pattern It is divided into sensor pattern area and wiring pattern area.
  • -Sensor pattern region S A region corresponding to the first pattern region of the phase shift mask, wherein a sensor pattern having a relatively wide pitch is formed.
  • -Wiring pattern region W A region corresponding to the second pattern region of the phase shift mask, and a wiring pattern having a relatively narrow pitch is formed.
  • Sensor pattern region (S) divided into sensor electrode region and sensor non-electrode region.
  • S 1 This is the area where the sensor electrode to be activated of the sensor pattern area is used.
  • Sensor non-electrode region (S 2 ) It is an inactive region of the sensor pattern region that is not used as a sensor electrode.
  • Wiring pattern region W divided into wiring electrode region and wiring non-electrode region.
  • -Wiring electrode area W 1 This is an area in which the wiring electrode to be activated is used among the wiring pattern areas.
  • Wiring non-electrode region W 2 This is an inactive region of the wiring pattern region and is not used as a wiring electrode.
  • Sensor electrode S 1a This is an electrode in the sensor electrode area.
  • Wiring electrode W 1a is an electrode in the wiring electrode area.
  • Block wiring electrode A wiring electrode in which one or more wiring electrodes are collected to form a block. One or more wiring electrodes having the same line width are formed in one block wiring electrode. One wiring electrode region forms one block wiring electrode.
  • a method of manufacturing a transparent electrode having a wiring electrode according to an exemplary embodiment of the present invention includes a phase transition mask preparing step (S100), a one-way pattern forming step (S200), a mesh pattern forming step (S300), and the like. It can be seen that the electrode forming step (S400).
  • the phase transition mask preparation step is to prepare a first phase transition mask 122 and a second phase transition mask 124 in which a pattern is implemented in a direction orthogonal to the first phase transition mask 122.
  • the phase shift mask 120 has a first pattern region A having a relatively wide line width and a second pattern region B having a relatively narrow line width, and has a first pattern region A of the phase transition mask 120. ) Corresponds to the sensor pattern region S of FIGS. 1- (a), and the second pattern region B of the phase shift mask 120 corresponds to the wiring pattern region W of FIGS. 1- (a). .
  • FIG. 3 is a flowchart of a phase shift mask preparation step according to a preferred embodiment of the present invention. Referring to FIG. 3, flows for manufacturing the first phase transition mask and the second phase transition mask in the order of FIGS. 3- (a), 3- (b) and 3- (c) can be seen. .
  • FIG. 3- (a) illustrates the step of preparing the chrome mask 100.
  • a chrome mask 100 having a chrome pattern 100a including a first pattern region A having a relatively wide line width and a second pattern region B having a relatively narrow line width is formed. You can see that it is a preparation step.
  • the chromium mask 100 for manufacturing the chromium mask 100 for the line pattern in the first direction for example, the horizontal direction
  • the chromium mask 100 for manufacturing the phase transfer mask 120 for the electrode pattern in the first direction It can be said that the design stage.
  • the line width of the chrome pattern 100a of the chrome mask 100 determines the pitch of the electrode pattern having a mesh shape.
  • a chrome pattern 100a having a wide line width is formed, and the wiring is formed.
  • a narrow line width chromium pattern 100a is formed in the region where the electrode W 1a is formed.
  • FIG. 3- (b) illustrates a step of forming a photoresist pattern.
  • the photosensitive agent is coated on the substrate 110, and then the chromium mask 100 is positioned to be exposed and developed to form the photosensitive agent pattern 110a.
  • the photoresist is applied to a predetermined thickness in the range of 1 ⁇ 10 ⁇ m on the substrate 110, such as LCD glass, and then the chromium mask 100 is placed on the photoresist, irradiated with ultraviolet rays, and then subjected to a photoresist pattern (development process) ( 110a).
  • a photoresist pattern (development process) ( 110a).
  • Figure 3- (b) it shows an implementation example of a positive type photosensitive agent.
  • phase shift mask 120 is formed from the substrate 110 on which the photosensitive agent pattern 110a is formed. It can be seen that the step obtained by separating).
  • the liquid phase transparent polymer material is poured on the photoresist pattern 110a, and then the phase shift mask 120 is manufactured through a thermosetting process, where the transparent polymer material is widely used to manufacture the phase transition mask 120. It is preferable to use PDMS or PU.
  • the height of the pattern formed on the phase shift mask 120 in FIG. 3- (c) is determined according to the thickness of the photosensitive agent applied on the substrate 110 in FIG. 3- (b).
  • the line width of the mesh pattern to be implemented may be too small to satisfy the electrical characteristics of the transparent electrode.
  • the pattern height of the phase transition mask 120 may be 1 to 10 ⁇ m. It is preferable to form in the range.
  • the one-way pattern forming step is a step of forming a one-way pattern metal specimen in which the pattern is formed in one direction by applying a photoresist on the substrate 200, then placing the first phase transition mask 122 and exposing and plating. . (S200)
  • FIG. 4 is a flowchart illustrating a one-way pattern forming step according to a preferred embodiment of the present invention. Referring to Figure 4, it can be seen the flow for producing a one-way pattern metal specimen in the order of Figures 4- (a), 4- (b), 4- (c) and 4- (d). .
  • FIG. 4 (a) shows the step of applying the photosensitizer.
  • the photosensitive agent may be applied by a process such as spin coating or spray coating.
  • FIG. 4- (b) illustrates a step of forming the first relief photosensitive pattern in one direction.
  • the first relief photosensitive pattern 200a is formed in one direction by irradiating ultraviolet rays. You can see that it is a step.
  • the first relief photosensitive pattern 200a is formed by performing an exposure process using the first phase transition mask 122 on the substrate 200 to which the photosensitive agent is applied, and the line width of the first phase transition mask 122 is formed.
  • the pitch of the first relief photosensitive pattern 200a to be implemented is determined.
  • the line width of the first relief photosensitive pattern 200a may be freely selected by adjusting the type of photoresist, the exposure amount, the development time, and the pattern height of the first phase transition mask 122.
  • FIG. 4- (c) illustrates a step of separating the first one-way pattern metal specimen.
  • the step is obtained by separating the first one-way pattern metal specimen 210 having the pattern formed thereon.
  • the first one direction in which the intaglio line pattern is implemented by first depositing a plating layer on the substrate 200 on which the first relief photosensitive pattern 200a is formed, and then applying a nickel or nickel alloy plating process (electroforming process).
  • the pattern metal specimen 210 is to be formed.
  • a nickel or nickel alloy plating process is additionally performed on the first one-way pattern metal specimen 210 to reverse the first one-way pattern metal specimen 210.
  • the embossed line pattern is implemented.
  • FIG. 5 is a photograph of a one-way pattern metal specimen according to a preferred embodiment of the present invention. Referring to Figure 5, it can be seen that the one-way pattern metal specimen.
  • the mesh pattern forming step is a step of forming a mesh pattern metal specimen in which a mesh pattern is formed by applying a photosensitive agent on the one-way pattern metal specimen, and then exposing and plating the second phase transition mask 124.
  • the mesh pattern forming step is to form a line pattern in a second direction (for example, a vertical direction) on the one-way pattern metal specimen, and is relatively relative to the sensor pattern region S having a sensor pattern having a relatively wide pitch. It is preferable to form a mesh pattern so that it consists of wiring pattern area
  • FIG. 6 is a flowchart illustrating a mesh pattern forming step according to a preferred embodiment of the present invention. Referring to FIG. 6, a flow for manufacturing a mesh pattern metal specimen in which a mesh pattern is formed in the order of FIGS. 6- (a), 6- (b), 6- (c), and 6- (d). It can be seen.
  • FIG. 6 (a) illustrates a step of applying a photosensitive agent on the one-way pattern metal specimen.
  • the pattern is a step of applying a photosensitive agent on the second one-way pattern metal specimen 220 formed in one direction.
  • FIG. 6- (a) ' the state where the photosensitive agent is applied to the upper portion of the second one-way pattern metal specimen 220 in which the pattern is formed in one direction is viewed from the top of the C-C' cross section.
  • 6- (b) illustrates forming a second relief photosensitive pattern. 6- (b), after placing the second phase transition mask 124 on the second one-way pattern metal specimen 220 coated with the photosensitive agent, the first relief photosensitive pattern 200a is irradiated with ultraviolet rays. It can be seen that the step of forming a mesh pattern by forming a second relief photosensitive pattern 220a orthogonal to and.
  • 6- (c) illustrates a step of separating the first mesh pattern metal specimen.
  • 6- (c) after forming a tertiary plating layer on the metal specimen on which the first relief photosensitive pattern 200a and the second relief photosensitive pattern 220a are formed, a negative mesh pattern is formed from the metal specimen. It can be seen that the step is obtained by separating the first mesh pattern metal specimen 300.
  • FIG. 6- (d) illustrates a step of separating the second mesh pattern metal specimen as an additional process.
  • the second mesh having the embossed mesh pattern formed from the first mesh pattern metal specimen 300 is described. It can be seen that the step obtained by separating the pattern metal specimen 310.
  • FIG. 7 is a photograph of a mesh pattern metal specimen according to a preferred embodiment of the present invention. Referring to FIG. 7, it can be seen that the mesh pattern metal specimen has a mesh pattern formed thereon.
  • the electrode forming step includes a block wiring electrode W 1A in which at least one wiring electrode W 1a that is activated as an electrode of the wiring pattern region W is electrically coupled using a mesh pattern metal specimen, and a sensor. It is a step of forming a sensor electrode (S 1a ) that is activated as an electrode of the pattern region (S). (S400)
  • This electrode forming step is described in I.
  • the electrode forming step includes applying a photosensitive agent (FIG. 8), partially removing and patterning the photosensitive agent (FIG. 9), separating a metal stamp (FIG. 10), and separating the film on which the intaglio pattern is formed. (FIG. 11) and filling the electrode material (FIG. 12).
  • FIG. 8 is an exemplary view of applying a photosensitive agent according to a preferred embodiment of the present invention.
  • 8- (a) shows the plane of the first mesh pattern metal specimen 300 on which the negative mesh pattern is formed
  • FIG. 8- (b) shows the side of FIG. 8- (a)
  • FIG. 8- ( c) shows a plane on which the photosensitive agent is applied on the upper portion of the first mesh pattern metal specimen 300
  • FIG. 8- (d) shows the side of FIG.
  • the photosensitive agent is coated on the first mesh pattern metal specimen 300 on which the negative mesh pattern is formed.
  • the photosensitive agent may be applied by spin coating or spray coating, and the spin coating may be adjusted according to the viscosity of the photosensitive agent and the rotational speed of the spin coating, and the spray coating may be applied according to the viscosity of the photosensitive agent and the injection amount of the photosensitive agent.
  • the thickness of the photosensitizer to be applied can be adjusted.
  • the most ideal photoresist coating thickness is to fill the photoresist only in the intaglio mesh pattern, but in reality, the photoresist may be applied to a portion that is not a mesh pattern at a constant thickness.
  • the photoresist remaining in the portion other than the negative mesh pattern may have an undesirable electrode pattern formed between the negative mesh patterns when the electrode material (for example, Ag paste) filling process is applied. Since it is necessary, it is preferable that the residual layer thickness of the remaining photosensitive agent is formed to 500 nm or less.
  • FIG. 9 is an exemplary view illustrating a step of partially removing and patterning a photosensitive agent according to a preferred embodiment of the present invention.
  • Fig. 9- (a) a sensor electrode (S 1a) a sensor electrode region formed (S 1) and the wire electrode (W 1a) showing a portion of the patterned planar remove the photosensitive material of the wiring electrode region (W 1) is formed 9- (b) shows a side view based on the CC ′ section of FIG. 9- (a).
  • a chromium mask is positioned on a mesh pattern metal specimen coated with a photoresist, and then exposed and developed to form a sensor electrode region S 1 and a wiring electrode W 1a in which a sensor electrode S 1a is formed. It can be seen that the step of patterning by partially removing the photoresist of the wiring electrode region W 1 is formed.
  • the chromium mask designed for forming the sensor electrode S 1a and the wiring electrode W 1a is placed on the first mesh pattern metal specimen 300 on which the photosensitive agent is applied and the negative mesh pattern is formed, and then irradiated with ultraviolet rays. Through the process, the photoresist of the portion to form the sensor electrode S 1a and the wiring electrode W 1a may be removed.
  • the process shows an example of applying a positive type photoresist.
  • the surface of the photoresist in the remaining region except for the partially removed photoresist is flattened. It is preferable to further include the step of reflowing in 30 degreeC-3 minutes.
  • the reflow temperature may be in the range of 100 to 160 ° C. It is desirable to maintain.
  • Reflowing in less than 30 seconds is not enough time to flatten the surface of the photoresist, and in excess of 3 minutes there is no superior property compared to reflowing for less than 30 seconds. It is preferable to carry out.
  • FIG. 10 is an exemplary view illustrating a step of separating a metal stamp according to a preferred embodiment of the present invention.
  • FIG. 10- (a) shows a metal stamp 400 on which a relief pattern is formed after metal deposition on a patterned mesh pattern metal specimen.
  • FIG. 10- (b) is a cross-sectional view taken along line CC 'of FIG. 10- (a). The process seen from the perspective on the basis of this is shown.
  • the metal stamp 400 having the embossed pattern is separated from the first mesh pattern metal specimen 300. It can be confirmed that it is a step obtained by.
  • a fourth plating layer may be formed by performing a nickel or nickel alloy plating process.
  • 11 is an exemplary view illustrating a step of separating a film having an intaglio pattern according to a preferred embodiment of the present invention.
  • 11- (a) shows a plane of the film 410 on which the intaglio pattern 412 is formed using an ultraviolet molding or thermoforming process
  • FIG. 11- (b) shows the CC of FIG. 11- (a). The process seen from the side of the cross section is shown.
  • the liquid polymer 410a is poured over the metal stamp 400 having the relief pattern formed thereon, and then covers the transparent film 410b such as PET. Thereafter, the liquid polymer 410a is cured using ultraviolet or thermal curing, and then the film 410 having the intaglio pattern 412 is formed from the metal stamp 400 by a sieve bonded to the transparent film 410b. Will be.
  • FIG. 12 is a view illustrating a step of filling an electrode material according to a preferred embodiment of the present invention.
  • 12- (a) shows the plane of the film 420 filled with the electrode material in the intaglio pattern 412 of FIG. 11- (b), and
  • FIG. 12- (b) shows the CC of FIG. 12- (a). Side is shown based on the cross section.
  • the step of separating the film 410 on which the intaglio pattern 412 is formed may be a step of filling an electrode material in the intaglio pattern 412.
  • the filling rate of the wiring electrode W 1a is lowered when the electrode material is filled under the same conditions. .
  • the electrode material eg, Ag paste
  • the intaglio pattern 412 implemented in the form of a mesh pattern so that the sensor electrode S 1a and the wiring electrode W 1a are at least one.
  • a transparent electrode film made of an electrically coupled block wiring electrode W 1A is manufactured. Since the sensor electrode S 1a and the wiring electrode W 1a have the same line width, uniform filling is possible.
  • the remaining photoresist layer remaining between the intaglio mesh pattern and the pattern prevents the filling of the electrode material on the surface of the mesh pattern metal specimen as shown in ⁇ of FIG. 12- (b).
  • the filled electrode material it is difficult for the filled electrode material to escape out of the pattern line width having a value of 2 ⁇ m or less and the intaglio mesh pattern having one or more times larger than the corresponding line width, but the size of hundreds of micrometers is filled in the area filled outside the mesh pattern. It has a line width with a very low pattern height of 500 nm or less.
  • This structure is similar to the filling process of the wiring electrode W 1a having an excessively large line width as described above, and thus the filling rate is very low due to the phenomenon that the electrode material escapes during the filling process, resulting in only the inside of the negative mesh pattern.
  • the electrode material is filled.
  • both the sensor electrode S 1a and the wiring electrode W 1a can be implemented.
  • the first mesh pattern metal specimen 300 is formed.
  • An electrode forming step using the second mesh pattern metal specimen 310 having the separated embossed mesh pattern is described as follows.
  • an additional nickel or nickel alloy plating process may be performed on the first mesh pattern metal specimen 300 to manufacture a second mesh pattern metal specimen 310 having an embossed mesh pattern.
  • the pattern metal specimen 300 and the second mesh pattern metal specimen 310 may be selectively used according to the characteristics of the subsequent process.
  • FIG. 13 is an exemplary view of film production using a second mesh pattern metal specimen according to a preferred embodiment of the present invention. Referring to FIG. 13, it can be seen that a film is manufactured using the second mesh pattern metal specimen 310 replicated from the first mesh pattern metal specimen 300 of FIG. 6 (c).
  • a photoresist is applied to an upper portion of the second mesh pattern metal specimen 310 (FIG. 13- (a)) having an embossed mesh pattern replicated from the first mesh pattern metal specimen 300 (FIG. 13- ( b)), the chrome mask is placed on the second mesh pattern metal specimen 310 coated with the photoresist and irradiated with ultraviolet rays, and then partially removed the photoresist through the developing process (FIG. 13- (c)), and then the second mesh pattern A plating layer may be formed on the metal specimen 310 (FIG. 13- (d)).
  • a metal stamp is prepared from the second mesh pattern metal specimen 310 (FIG. 13- (e)), and the metal layer is re-created by reforming the plating layer on the metal stamp (FIG. 13- ( f)), after separating and obtaining a film having a negative pattern formed therefrom (FIG. 13- (g)), a transparent electrode film can be prepared by filling an electrode material in the negative pattern (FIG. 13- (h)).
  • the sensor electrode when the transparent electrode film is manufactured using the second mesh pattern metal specimen 310 having the embossed mesh pattern, the sensor electrode may be implemented but the wiring electrode may not be implemented.
  • FIG. 14 is an exemplary view of film production according to a preferred embodiment of the present invention. Referring to FIG. 14, it is understood that II forms an electrode through a process of partially removing and patterning photoresist except for the photoresist of the sensor electrode region S 1 and the wiring electrode region W 1 , unlike in the case of I. Can be.
  • the electrode forming step is the step of applying a photosensitive agent on the mesh pattern metal specimen (Fig. 14- (a)), the step of removing part of the photosensitive agent and patterning (Fig. 14- (b)), the photoresist layer after metal deposition And removing the metal deposition layer deposited on the photoresist layer (FIG. 14- (c)), separating the metal stamp (FIG. 14- (d)), and separating the film on which the intaglio pattern is formed (FIG. 14- (e)) and filling the electrode material into the intaglio pattern (FIG. 14- (f)).
  • Figure 14- (a) shows the step of applying a photoresist on the mesh pattern metal specimen.
  • the photosensitive agent is coated on the first mesh pattern metal specimen 300 on which the negative mesh pattern is formed.
  • the photosensitive agent to be applied may be applied by spin coating or spray coating, which is the same as described with reference to FIG. 8.
  • Figure 14- (b) shows the step of partially removing and patterning the photoresist.
  • the sensor electrode region S 1 and the wiring where the sensor electrode is formed by exposure and development are formed. It can be seen that the photoresist of the remaining region except for the photoresist of the wiring electrode region W 1 on which the electrode is formed is partially removed and patterned.
  • 14- (c) shows a step of removing the photoresist layer after the metal deposition and the metal deposition layer deposited on the photoresist layer.
  • the metal is deposited in a region where the photoresist is partially removed by adding it to the photoresist removing liquid. It can be seen that the photoresist layer 301 made of a photoresist except for the deposit 302a and the metal deposition layer 302 deposited on the photoresist layer 301 are removed.
  • Figure 14- (d) shows the step of separating the metal stamp.
  • the photoresist layer 301 and the metal deposition layer 302 have been removed, the photoresist layer 301 and It can be seen that the metal stamp 400 having the embossed pattern is separated from the first mesh pattern metal specimen 300 from which the metal deposition layer 302 is removed.
  • FIG. 14- (e) illustrates a step of separating the film on which the intaglio pattern is formed.
  • the film on which the intaglio pattern 412 is formed from the metal stamp 400. It can be seen that 410 is obtained by separating.
  • FIG. 14- (f) shows the step of filling the electrode material in the intaglio pattern.
  • the electrode material is filled in the intaglio pattern 412 to form the film 420 filled with the electrode material, thereby realizing the sensor electrode and the wiring electrode. This is the same as described with reference to FIG.
  • the conventional touch module is composed of a transparent electrode film, a flexible PCB (Flexible PCB or FPCB), a flexible PCB connector (FPCB connector), both wires in the bonding process of the transparent electrode film and the flexible PCB terminal
  • a flexible PCB Flexible PCB or FPCB
  • FPCB connector flexible PCB connector
  • FIG. 16 is a conceptual diagram of an FPCB integrated module according to a preferred embodiment of the present invention.
  • FIG. 16- (a) shows the plane of the Ag electrode-filled transparent electrode film
  • FIG. 16- (b) shows that the transparent electrode film is cut to form a plug type FPCB.
  • the flexible PCB in which the transparent electrode is electrically connected to the block wiring electrode is integrally formed based on the problem of FIG. 15. That is, there is a separate flexible PCB, but there is a problem that the alignment is broken due to misalignment, in the present invention, the sensor electrode (S 1a ) and the wiring electrode (W 1a ) is electrically coupled to at least one block wiring electrode (W 1A ). Since this all comes out at once, the above problem does not occur.
  • this is a configuration of an improved touch module integrally attached to a connector for an FPCB by integrally implementing a flexible PCB on a transparent electrode film, and manufacturing a flexible PCB integrally in a transparent electrode film manufacturing process to reduce the process cost. Not only can it be reduced, there is an advantage that can reduce the defect in the contact portion between the wiring electrode and the flexible PCB.
  • a pattern having a thickness of 2 ⁇ m or less may be realized for both the sensor electrode S 1a and the wiring electrode W 1a by using a phase transition mask of a transparent polymer material (PDMS or PU).
  • PDMS transparent polymer material
  • an exposure pattern using a chrome mask is removed to form an electrode pattern on the corresponding part by removing the photoresist from the outer shape of the wiring electrode, thereby facilitating pattern design.
  • alignment of the sensor electrode S 1a and the wiring electrode W 1a may be easy.
  • the filling property of the electrode material eg, Ag paste
  • the sensor electrode (S 1a ) has a line width of 2 ⁇ m or less, and the pitch between the sensor electrode (S 1a ) and the sensor electrode (S 1a ) has more than 100 times the line width, thereby improving the light transmittance characteristics Can be.
  • the pitch between the wire electrode (W 1a) has a line width of said Genie 2 ⁇ m or less
  • the wiring electrode (W 1a) and the wire electrode (W 1a) is jinim the most 40 times the line width, to improve the electrical characteristics Can be.
  • the block wiring electrode W 1A is a wiring electrode in which one or more wiring electrodes W 1a are electrically coupled to form a block, and the wiring electrode W 1a in the block wiring electrode W 1A has a line width of 2 ⁇ m or less.
  • the pitch between the wiring electrode W 1a and the wiring electrode W 1a is 40 times or less of the line width, thereby improving electrical characteristics.
  • the present invention relates to a method for manufacturing a transparent electrode having a wiring electrode, and more particularly, a block wiring electrode in which at least one wiring electrode activated by the electrode is electrically coupled, and a sensor electrode activated by the electrode in a one-time process.
  • a transparent electrode having a wiring electrode that can satisfy the filling characteristics of the electrode material and the alignment operation characteristics of the wiring electrode and the sensor electrode at the same time.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemically Coating (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'une électrode transparente pourvue d'une électrode de câblage, plus précisément un procédé tel que susmentionné qui met en œuvre, au cours d'un processus à une seule étape, à la fois une électrode de câblage en bloc dans laquelle une ou plusieurs électrodes de câblage devant faire office d'électrodes sont couplées électriquement, ainsi qu'une électrode de capteur devant faire office d'électrode, ce qui permet de satisfaire à la fois une caractéristique de remplissage d'un matériau d'électrode et une caractéristique de travail d'alignement de l'électrode de câblage et l'électrode de capteur. La présente invention a pour objet un procédé de fabrication d'une électrode transparente pourvue d'une électrode de câblage. Ledit procédé comprend : une étape de préparation de masques de déphasage consistant à préparer un premier masque de déphasage et un second masque de déphasage pourvu d'un motif appliqué dans une direction orthogonale au premier masque de déphasage ; une étape de formation d'un motif unidirectionnel consistant à former un échantillon métallique à motif unidirectionnel comportant un motif formé de manière unidirectionnelle en recouvrant d'un photosensibilisateur une partie supérieure d'un substrat, en plaçant le premier masque de déphasage sur celle-ci, puis en procédant à une exposition à la lumière et à un placage ; une étape de formation d'un motif maillé consistant à former un échantillon métallique à motif maillé comportant un motif maillé en recouvrant du photosensibilisateur une partie supérieure de l'échantillon métallique à motif unidirectionnel, en plaçant le second masque de déphasage sur celle-ci, puis en procédant à une exposition à la lumière et à un placage, le motif maillé se composant d'une région de motif de capteur pourvue d'un motif de capteur ayant un pas relativement large et d'une région de motif de câblage pourvue d'un motif de câblage ayant un pas relativement étroit ; et une étape de formation d'une électrode consistant à former une électrode de câblage en bloc dans laquelle une ou plusieurs électrodes de câblage devant faire office d'électrodes sont couplées électriquement à partir de la région de motif de câblage, ainsi qu'une électrode de capteur devant faire office d'électrode à partir de la région de motif de capteur en utilisant l'échantillon métallique à motif maillé.
PCT/KR2016/006519 2015-09-02 2016-06-20 Procédé de fabrication d'une électrode transparente pourvue d'une électrode de câblage WO2017039129A1 (fr)

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