Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/483—Containers
  • H01L33/486—Containers adapted for surface mounting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/64—Heat extraction or cooling elements
  • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Definitions

• the present disclosure relates to a semiconductor chip having a semiconductor body.
• the semiconductor chip further has a carrier with a first carrier surface, on which the semiconductor body is arranged.
• the mechanical stability of the carrier is because of
• Semiconductor body is arranged on the carrier, too
• An object to be solved is to provide a support of high mechanical stability.
• the semiconductor chip is an optoelectronic semiconductor chip.
• the active region may be provided for generating radiation or for receiving radiation.
• the semiconductor body can for a
• the semiconductor body can be grown epitaxially. Epitaxially grown
• Semiconductor bodies require particularly good mechanical stabilization by the carrier since unstable carriers can cause breaks in the epitaxially grown semiconductor material, which can result in significant dysfunctions in the function of the chip and complete breakdown of the chip, such as when the active region breaks.
• the carrier has a second one on the side facing away from the semiconductor body
• the first and the second carrier surface can be aligned with one another, preferably aligned parallel to one another, and in particular run parallel to one another.
• the carrier has at least one electrically conductive conductor body.
• the conductor body may extend from the first carrier surface to the second carrier surface.
• the conductor body is expediently electrically conductively connected to the active region of the semiconductor body.
• the electrically conductive conductor body may be a first conductor body.
• the carrier may have, in addition to the first conductor body, a second electrically conductive conductor body, wherein the first conductor body and the second conductor body with the Semiconductor bodies are preferably electrically conductively connected on different sides of the active region.
• the one conductor body may be electrically conductively connected to the side of the semiconductor body facing the carrier, in particular between the carrier and the active region, and the other conductor body may be electrically conductively connected to the semiconductor body on the side of the active region facing away from the carrier.
• the first and second conductor bodies are preferably electrically isolated from each other. In the area between the active area and the carrier, the first and the second conductor body
• the first conductor body and / or the second conductor body may contain or consist of a metal or a metallic material.
• the first conductor body and / or the second conductor body may extend from the first carrier surface to the second carrier surface.
• the carrier has a composite body.
• the carrier may be formed by the composite body.
• the composite body can be the electrical
• the composite body has an electrical insulating body, preferably a shaped body, on.
• the shaped body can be molded onto the conductor body.
• Material for the molded article can be rendered flowable for the molding or can already be provided ready for use, and subsequently, in particular after the flowable material has flowed onto the conductive body, the flowable material can be solidified again to form the molded article.
• Shaped body can determine the mechanical properties of the wearer significantly.
• the molded body since it is electrically insulating, the first and second conductor body
• the molded body can guarantee the mechanical stability of the composite body.
• the shaped body Seen in top view of the first and / or second carrier surface, can have an edge region which comprises the conductor body, in particular the first and the second
• Ladder body revolves. Between the first and the second conductor body may be an intermediate region of the shaped body
• the molded body can be made in one piece.
• the molded body can be seen over the entire circumference of the conductor body in plan view of the first and / or second support surface directly adjacent to the conductor body.
• the respective support surface can be flat or uneven.
• the first carrier surface may be uneven, with the unevenness preferably resulting from the shaped body.
• the second carrier surface may be flat, for example.
• the composite body is designed to be resistant to tensile stress.
• Tensile loads can be caused in particular by forces acting in one direction, which are aligned along the first support surface, the second support surface or preferably parallel thereto.
• the tensile load force can in particular perpendicular to the
• the composite body comprises both a conductor body and the shaped body, it is of particular advantage if the composite body is designed to be resistant to tensile stress, since the carrier is not composed of one part but of several,
• the tensile stability of the composite body is preferably ensured only by the formation of the conductor body, which is formed with respect to the molding body so that the connection between the molding and the conductor body is particularly stable.
• the conductor body may be formed so that the force parallel to the first and / or second support surface, which is required to release the shaped body from the conductor body, per unit area of the contact surface
• Shaped body / conductor body greater than or equal to 10 MPa, preferably greater than or equal to 50 MPa, more preferably greater than or equal to 100 MPa.
• the tensile strength of the connection between the shaped body and the conductor body, in particular for forces which are aligned along the first carrier surface and / or along the second carrier surface, is increased.
• the shaped body is integrally formed on the semiconductor body and / or the conductor body. The semiconductor body or semiconductor material for the semiconductor body may therefore already be present, as well as possibly a conductor body before material for the
• the shaped body can be attached to a side surface of the
• Semiconductor body or arranged between the semiconductor body and the molded body elements, which are not semiconductive suitably, such as a
• the shaped body can simulate the surface profile which is defined by the structures following it. Accordingly, the shaped body may be uneven on the side facing the semiconductor body.
• the conductor body is expediently applied to the semiconductor material of the semiconductor body prior to the formation of the shaped body.
• the conductor body has a first body main surface which faces the semiconductor body.
• Ladder body is turned away from the first main body surface.
• the conductor region may have an excellent view when viewed from the first and / or second main body surface
• the conductor body is elongated.
• Body main surface are preferably over at least one
• the first and second body major surfaces may be aligned or parallel with each other.
• the tensile strength of the Composite body increased.
• the respective main body surface can be flat.
• the ladder body has an excellent longitudinal direction and / or a longer side when viewed from the first body main surface, the following explanations preferably apply to the lateral surface bounding the ladder body in or along the longitudinal direction.
• the embodiments are preferably at least for a side surface of a conductor body, which faces the other conductor body, preferably for the two mutually facing side surfaces of the conductor body.
• the explanations regarding the side surface may alternatively or additionally also apply to a surface region in which the side surface of the first conductor body has the side surface of the second surface facing the first conductor body
• Ladder body covered and / or vice versa The respective side surface of the conductor body may be flat, curved - convex or concave - and / or structured.
• the respective side surface may be oblique or perpendicular to the first body main surface, second body main surface, first
• Support surface and / or second support surface extend.
• Slant preferably means neither perpendicular nor parallel.
• the conductor body is provided for increasing, preferably adhesion-promoting,
• the contact surface formed between the conductor body and the molded body.
• the contact surface can be increased, for example, by increasing the surface area of the side surface, for example by tilting the surface
• the conductor body can be formed by the shaped body, so that the
• Shaped body seen from one side of the body
• Conductor body extends through the conductor body to the other side of the conductor body, so that a continuous transverse strut of the shaped body is formed, which in
• Seen on the first and / or second support surface extends over the region of the conductor body.
• a transverse strut of the molding seen from one side of the first conductor region over the first
• the transverse strut can continue over the region of the second conductor body and again on the side facing away from the intermediate region
• a partial region of the shaped body can be arranged between a side of the conductor body facing the second carrier surface and the second carrier surface.
• the semiconductor chip is for electrical contacting on the part of the second Support surface formed.
• the second body main surface of the first conductor body and / or the second body main surface of the second conductor body is located
• the respective main body surface may be provided for electrically conductive connection with electrically conductive material, for example a solder.
• the respective body main surface can be connected to an external electrical connection
• Connection conductor such as a conductor track of a printed circuit board, be provided.
• one, an arbitrarily selected plurality or all of the following elements have a thickness which is less than or equal to 300 ⁇ m, preferably less than or equal to 250 ⁇ m, particularly preferably less than or equal to 200 ⁇ m, for example less than or equal to 150 ⁇ m or less than or equal to 100 ym is: carrier,
• the thickness may be the maximum, the minimum or an average value of the thickness of the respective element, for example the arithmetic or geometric mean value between maximum and minimum thickness,
• the first body main surface covers the second body main surface, in particular completely and / or vice versa, as seen in plan view of the respective body main surface and / or the first or the second carrier surface.
• the area of the first body main surface is larger than the area of the surface second main body surface or vice versa.
• a larger first main body surface offers the advantage that the
• Semiconductor body facing surface is large and thus resulting in operation of the semiconductor chip heat loss from a large, thermally well conductive surface of the
• Ladder body can be included. A large
• the conductor body is designed such that the conductor body seen in cross-section, starting from the first body main surface in
• a transverse dimension of the conductor body from the first body main surface may decrease or increase.
• Magnification can be continuous, uniform, monotonic, and / or continuous.
• the side surface or a main extension direction of the side surface is obliquely relative to the first support surface, to the first
• Body main surface aligned with the second support surface and / or the second body main surface. Due to the oblique orientation, the surface of the side surface compared with a perpendicular to the preferably parallel
• the tensile strength of the composite can be improved.
• the side surface for example, seen in plan view of one of the support surfaces and / or in cross section along the thickness direction of the conductor body, one or more undercuts.
• the side surface can be formed without undercuts.
• a training with undercut offers the advantage that in the area of the respective undercut one
• Abutment surface of the conductor body for the molding can result.
• the respective abutment surface preferably acts as an abutment surface in the lateral direction, thus in particular in the pulling direction.
• the respective abutment surface can the
• Conductor body may be given in a direction parallel to the first and / or second support surface or parallel to the first and / or second main body surface, the following sequence: partial region of the shaped body, partial region of the conductor body, partial region of the shaped body.
• abutment surface Between the abutment surface and the remaining part of the conductor body, a partial region of the shaped body can be arranged.
• the molded body can be molded onto the abutment surface.
• This preferably supports the non-positive adhesive connection between the molded body and the conductor body. Is the side surface without undercutting, so there are
• the conductor body is connected in a form-fitting and / or non-positively connected manner to the molded body.
• the conductor body can only positively or only positively or with a combination of positive and non-positive with the molding
• the side surface is provided with a surface structure.
• Surface structure may have undercuts or be formed without undercuts.
• Surface structure may be formed by one or a plurality of structural elements.
• Structural elements may be in the thickness direction, for example perpendicular to the first carrier surface, the second carrier surface, the first body main surface and / or the second
• the respective structural element can be formed by a bulge or indentation of the conductor body.
• the structural elements may have lateral and / or vertical protrusions or indentations
• the respective structural element is preferably designed such that it can be shaped or formed with the material intended for the formation of the shaped body, for example a flowable molding compound.
• Conductor body be formed so that the cross section of the conductor body remains the same in the thickness direction, so preferably does not change in surface area and / or shape.
• a uniform surface structure may be
• Body main surface formed comb-like, for example, sawtooth-like structure of the side surface.
• a uniform surface structure has the advantage that it can be realized in a simple manner by means of a mask, for example by manufacturing the mask with the structure for the side surface and subsequently the conductor body using this mask, for example galvanically,
• the cross-section may change in the thickness direction, for example, in terms of shape and / or area.
• the change can be continuous or discontinuous.
• a discontinuous change may be due to an in
• Thickness direction alternating sequence of areas
• a discontinuously changing surface structure in the thickness direction may be formed by a comb-like formation of the side surface seen in cross-section perpendicular to the first body main surface.
• the cross-sectional area in the thickness direction-seen, for example, away from the first main body surface-can increase or decrease continuously.
• a surface A of the side surface is greater than the thickness d of the conductor body multiplied by one of the following quantities:
• B is one dimension, for example a maximum
• 0 is the area of the area in which the facing each other
• Side surfaces of the first and the second conductor body cover each other and it is true that 0 is greater than B * d and / or C * d. 0 may be smaller than or equal to the area A of the side surface of the first conductor body and / or less than or equal to the area A of the side surface of the second conductor body.
• C * d > 1.05, preferably> 1.10,> 1.20 or> 1.30, more preferably ⁇ 1.40, for example ⁇ 1.50, 1.80, ⁇ 1 , 90 or> 2.00.
• a partial area of the shaped body is a connecting area which, seen from one side of the side view of the first or second carrier area, is viewed from above
• Conductor body over an area covered by the conductor body in the plan view of the first and / or second body main surface area to another side of the conductor body
• transverse struts can be formed by the conductor body.
• the connection area can be in
• Connecting portion forms a portion of one of the support surfaces - or completely - for example, if the
• connection area exposed may, for example, be a partial region of the second carrier surface.
• the connection region can be transverse to, in particular as
• Cross strut or along the, in particular as a longitudinal strut, excellent longitudinal direction of the conductor body.
• connection area is perpendicular to the longitudinal direction.
• a first connection region preferably extends in a plan view over the first conductor body and a further connection region extends over the second conductor body.
• connection area aligned.
• the further connection area continues the first connection area, preferably in a straight line.
• the shaped body projects beyond the conductor body on the side of the semiconductor body in a partial area. According to at least one embodiment, the
• Semiconductor body epitaxially grown and the semiconductor chip is growing substrate, that is free of the substrate on which the semiconductor body was epitaxially grown.
• the carrier is not subject to the
• a connection area of the semiconductor chip is formed by means of the side of the conductor body facing away from the semiconductor body.
• the pad can therefore be arranged below the semiconductor body.
• the conductor body has a plurality of electrically within the carrier on separate sections.
• the partial regions of the conductor body are preferably electrically conductively connected to the active region in each case. Between two
• adjacent portions of the Leitergropers may be arranged in each case a portion of the shaped body.
• the respective strut can, starting from the intermediate region between the first and the second conductor body, between two
• these struts can run continuously from the first support surface to the second support surface.
• struts between portions of the first and second conductor body are aligned with each other or offset from each other.
• a continuous molding body area may be formed.
• Ladder body can be reduced.
• the number of portions of the first conductor body and the second conductor body may be different.
• the conductor body is formed in one piece. In this case, it does not have a plurality of subareas. A particularly advantageous embodiment is shown below:
• An optoelectronic semiconductor chip having a semiconductor body having an active region, and a carrier having a first carrier surface, on which the semiconductor body is arranged, and a second carrier surface on the side facing away from the semiconductor body, the carrier having a composite body, the at least one electrically leidayen Conductor body and at least one electrically insulating molded body, wherein the conductor body extends from the first support surface to the second support surface and is electrically connected to the active region.
• FIGS. 1A and 1B show an example of a semiconductor chip on the basis of a schematic plan view (FIG. 1A) and a schematic sectional view (FIG. 1B).
• Figures 2A and 2B illustrate a situation of mechanical stress for the semiconductor chip according to Figures 1A and 1B.
• FIGS 3 to 11, 13A, 13B, and 14 to 16 show
• FIG. 12 shows an exemplary embodiment of a detailed sectional schematic view
• FIG. 1A shows a plan view of an exemplary embodiment of a semiconductor chip
• FIG. 1B shows the associated sectional view.
• the semiconductor chip 1 has a carrier 3.
• the carrier 3 has a first carrier surface 5 and a second carrier surface 7.
• the respective carrier surface 5 or 7 may be a main surface of the carrier.
• the two support surfaces 5 and 7 may be connected via one or a plurality of side surfaces 9 of the carrier.
• Carrier surface as the main surface may be larger than that of each of the side surfaces 9.
• the second support surface 7 is
• the carrier 3 has a first conductor body 11.
• Carrier 3 has a second conductor body 13. Furthermore, the carrier 3 has a shaped body 15.
• the molded body is electrically insulating, for example, an electric insulating material or an electrically insulating material composition.
• the first conductor body 11 and the second conductor body 13 are embedded in the molded body 15 and deformed by it.
• the respective conductor body 11 or 13 expediently extends from the first carrier surface 5 to the second carrier surface 7. Subareas of the first
• Support surface 5 and the second support surface 7 can through the molded body 15 and the respective conductor body 11th
• the two conductor bodies 11 and 13 are electrically insulated from each other via the shaped body 15 within the carrier 3.
• the respective side surface 9 is formed by the shaped body 15.
• the side surface 9 may have separating tracks, for example, from the
• the respective conductor body 11, 13 has a first
• the first body main surface 17 faces the semiconductor body 23.
• the first body main surface 17 is exposed on the side of the first support surface 5 and may in particular be part of this support surface.
• the second main body surface 19 faces away from the semiconductor body. The second
• Body main surface 19 lies on the side of the second
• Carrier surface 7 free and can in particular part of this
• Body main surfaces are connected to each other via at least one or, as shown, a plurality of side surfaces 21.
• the semiconductor body 23 is connected to the carrier 3
• the semiconductor body has an optoelectronically active region, for example a to Radiation generation or radiation receiving trained active area.
• the semiconductor body may, for example, according to a diode, for example a light emitting diode or a
• Photodiode be formed.
• the conductor bodies 11 and 13 are connected to the semiconductor body 23 on different sides of the active region, as will be explained in more detail later (compare the description in connection with FIG. 12). Therefore, the first conductor body 11 and the second conductor body 13 make external electrical contacts of the
• the respective conductor body in particular its second facing away from the semiconductor body 23 second
• Body main surface 19 for electrical contacting, for example, for soldering the semiconductor chip with an external electrical connection of a connection carrier, on which the semiconductor chip is arranged, for example one
• the respective main body surface 17 or 19 of the first and / or second conductor body is expediently from
• the respective conductor body has an excellent longitudinal direction.
• the first and the second conductor body may, for example, have a rectangular shape in plan view.
• Ladder bodies are, in particular along their longitudinal direction, aligned with each other. It should be noted that features described in connection with the exemplary embodiment for a carrier with two conductor bodies can likewise also be used for a carrier without a second conductor body. In addition, features that are common in the general part of Description are also described for the
• Embodiments are used and vice versa.
• the carrier 3 is formed as a composite body, the
• Ladder body 11, 13 and the molded body 15 includes. As can be seen in the plan view in FIG. 1A, the shaped body 15 has an edge region 25 which completely surrounds the first and the second conductor body in the circumferential direction. Between the two conductor bodies 11 and 13, an intermediate region 27 of the shaped body is arranged, which extends consistently between the two conductor bodies and connects one side of the edge region 25 with the side of the edge region 25 of the molded body facing away from this side in a top view.
• the edge region 25 can be designed, for example, as a frame.
• the frame can be provided with a realized by the intermediate region 27 longitudinal strut.
• the edge region 25 preferably has a width that is less than or equal to 50 ym in plan view of the second support surface. Preferably, the width of the edge region 25 is greater than or equal to 20 ym.
• a thickness of the shaped body 15 and / or the respective conductor body 11 or 13 may be less than or equal to 200 ym, preferably less than or equal to 100 ym.
• the carrier as a whole may have a thickness which is less than or equal to 200 ⁇ m, preferably less than or equal to 100 ⁇ m.
• a length and / or a width of the carrier or of the respective conductor body can be less than or equal to 3 mm in plan view of the first or second carrier surface.
• the length and / or the width of the carrier or of the respective conductor body can be greater than or equal to 300 ym in plan view of the first or second carrier surface.
• the length of the respective conductor body 11, 13 can be twofold or more of the width of this conductor body seen in plan view of the second support surface 7.
• Intermediate area 27 is preferably chosen such that an electrical short circuit during assembly of the semiconductor chip to a connection carrier, for example by means of a solder, is avoided.
• the distance may be greater than or equal to 60 ⁇ m, preferably greater than or equal to 150 ⁇ m, particularly preferably greater than or equal to 250 ⁇ m. With larger chips, of course, larger distances are possible or expedient than with smaller chips. If the distance can change in the
• the two external connection surfaces can be connected as surfaces of the first and second conductor body on the side facing away from the semiconductor body 23 of the carrier 3, the semiconductor chip 1 by means of SMD techniques (SMD: surface mountable device
• Component are handled and contacted.
• the following is a method of making a
• the semiconductor layer sequence is on one
• Substrate arranged, for example, the growth substrate on which the semiconductor layer sequence, epitaxially grown, has.
• the semiconductor layer sequence has a active area.
• the semiconductor layer sequence is divided into a plurality of semiconductor bodies, each having an active region. This active area can be made up of a partial area of the active area of the
• Semiconductor layer sequence may be formed.
• a plurality of conductor bodies on the semiconductor layer sequence or in each case at least one conductor body, preferably two conductor bodies, arranged or formed on a semiconductor body, so that the respective conductor body is electrically conductively connected to the active region.
• Conductor body provided for a semiconductor body they are preferably electrically conductive on different sides of the active region with the semiconductor body
• a mass is provided for a shaped body layer.
• the mass is provided either flowable or in the solid state and subsequently rendered fluid, for example liquefied. Then, the flowable mass is molded to the conductor body and cured after molding to form the shaped body layer.
• Composite layer comprising the shaped body layer and the conductor body.
• a composite is formed which has the composite body layer and the semiconductor body arranged on the composite body layer.
• the composite is then singulated into semiconductor chips, each comprising a semiconductor body and a composite body. Side surfaces of the composite body can therefore separation tracks, for example
• the shaped body of the composite body comprises a piece of the shaped body layer.
• Composite body further comprises one or two conductor body. Before the separation, the substrate is expediently thinned or partially or completely removed.
• FIGS. 2A and 2B illustrate the handling of the
• Semiconductor chip for example by means of a holding device 29 in an edge region, for example, on the part of the second support surface 7, is held, so that the mechanical
• the force F leads, for example because of the bending moment caused, to a tensile load which acts on the carrier 3, and in particular on the contact surface between the shaped body 15 and the respective conductor body 11 or 13, in particular in the intermediate region 27.
• the tensile load acts
• the holding device 29 can be realized for example by a nozzle which holds the semiconductor chip 1 by negative pressure. Already exerted by the negative pressure necessary for the holding function force may be sufficient to the carrier 3 as shown in Figure 2B and thereby make the chip useless. Similar mechanical stresses can occur if a chip is placed on soldering areas (solder pads) on a connection carrier.
• Tensile stability of the carrier 3 with the composite body comprising the molded body 15 and the conductor body 11 and 13, can be improved.
• the tensile stability can be increased for example by the fact that the contact surface or adhesive surface, ie the surface between the shaped body 15 and the respective conductor body 11 or 13, in which the molded body and the
• Conductor body adjacent to each other is increased.
• the surface of the respective conductor body 11, 13 are increased.
• the measures for increasing the adhesive surface or contact surface between the shaped body and the conductor body are selected so that the necessary modifications already during the formation of the conductor body, for example by galvanic
• Apply can be carried out and subsequently the molding as a flowable molding compound to the already
• the contact surface or adhesive surface between the molding and the conductor body is increased.
• the contact or adhesive surface is preferably enlarged
• the carrier preferably need not be changed in terms of dimensions.
• Contact surface between moldings and the respective Ladder body may be opposite a cuboid or
• each an embodiment with a structured side surface 21 of the conductor body 11, 13 is indicated.
• the mutually facing side surfaces 21 of the conductor bodies 11, 13 are each similarly structured, wherein the individual
• Structural elements are aligned. Deviating from the illustration, the side surfaces can also be different be structured and / or the structural elements of different side surfaces seen in plan offset from each other
• Structural elements are considered to be away from the respective conductor body and / or in the direction of the other conductor body
• the structural elements can thus be from one end of the
• Support surface 7 executed undercuts.
• the shaped body 15 and the respective ladder body for loads in the pulling direction that is, for example, perpendicular to the excellent longitudinal direction of the respective
• Abutment surfaces which can resist a separation of the molded body and the conductor body under tensile load, is supported.
• Shaped body, material of the conductor body (this forms expediently the main body of the conductor body).
• the end surface 53 of the molded body 15, in particular its intermediate region 27, adjacent.
• FIGS. 3 and 4 can be produced, for example, in such a way that via a mask on the
• the mask may, for example, a suitably structured mask, for example a
• Photoresist mask his.
• the mask material-free area is, for example, galvanically, with conductor material for the
• the conductor body is metallic, for example. Since the surface structure is uniform, the mask can be compared with others described below Structures are comparatively easy to form, for example, with only one mask layer and / or without undercuts or inclined flanks.
• a plurality of connecting regions 33 of the molded body 15 are provided which, in particular in a plan view of the second
• Support surface 7 seen from the one side of the respective conductor body 11 and 13 extend to the other side, for example, from the edge region 25 to
• transverse struts may be formed in the molded body. It may alternatively or additionally be provided longitudinal struts, which extend along the excellent longitudinal direction of the respective
• the respective conductor body can have a plurality of partial regions, in the exemplary embodiment three partial regions, wherein between each two adjacent partial regions of the same conductor body a respective connection region 33 is arranged.
• the subregions of the respective conductor body may be continuous, that is to say separated by the entire carrier, so that the connection region 33 can extend continuously from the second carrier surface 7 as far as the first carrier surface 5.
• one or a plurality of connection regions may be continuous, that is to say separated by the entire carrier, so that the connection region 33 can extend continuously from the second carrier surface 7 as far as the first carrier surface 5.
• connection portion 33 in the circumferential direction - ie in particular azimuthal to its extension direction - is completely surrounded by the conductor body material and / or only partially, for example, not limited on one side, the conductor body.
• Embodiment connecting areas 33 are provided, which are exposed by the second support surface 7, but otherwise in the circumferential direction of the respective conductor body 11, 13th
• connection region 33 is completely surrounded by the conductor body material as viewed in the circumferential direction along its extension direction.
• the conductor bodies 11, 13 according to FIG. 5 can be formed by a suitably formed mask with subsequent deposition, for example electrodeposition, sputtering or
• the portions of the conductor body 11 and the portions of the conductor body 13 are formed. Not to be covered with conductor material areas are suitably covered with the mask material.
• Connection region 33 and the semiconductor body in Figure 6 - provided. The areas that are free of the mask become
• Connection area 33 provided area covered. If the conductor material is subsequently deposited, the structure shown in FIG. 6 with a recess for the result
• connection region 33 The procedure according to FIG. 7 can be followed similarly, wherein, after the formation of the recess, a region of the conductor body which is remote from the semiconductor body is additionally formed, which forms the region for the body
• This semiconductor body-remote region of the conductor body can be defined by means of a further mask, the mask which defines the recess preferably still not being removed in order to prevent conductor material from entering the recess actually provided for the connection region.
• the mask structure defining the recess may be overmolded to form the
• respective conductor body free areas - these include the connecting portions 33 - are filled with the mass for the molding.
• Connecting regions 33 through different conductor bodies 11 and 13 can be aligned with each other, as shown in FIG.
• a connection region 33 through a conductor body can pass over the intermediate region 27
• connection region 33 straight line in a connection region 33 pass through or open the other conductor body.
• connecting regions 33 can be arranged offset from one another by different conductor bodies 11 or 13, as shown in FIGS. 13A or 13B. A staggered
• Starting conductor body extends over the intermediate region 27 and continues over the other conductor body, is avoided.
• the number of connecting regions 33 via different conductor bodies 11, 13 can, as shown in FIG. 13B, different or, as shown in Figure 13A and Figure 5, be the same. Accordingly, the first conductor body 11 and the second conductor body 13 can be the same number
• FIGS. 8 to 10 and 14 have in common that the first main body surface 17 and the second main body surface 19 are each different
• the body main surface 17 is smaller than the second body main surface 19, and in Figs. 9 and 10, the reverse is the case. In the ladder bodies in Figure 8 increases the
• FIGS. 8 and 9 taken longitudinal direction of the respective conductor body 11 and 13, respectively, seen continuously away from the first body main surface 17.
• Ladder body oblique.
• Body major surface 20 ° or more, preferably 30 ° or more, or 40 ° or more.
• Body main surface 17 away seen an area with a smaller cross-sectional area.
• the conductor bodies 11, 13 are preferably arranged relative to one another such that an intermediate region 27 of the shaped body 15 is formed between them, which has a t-shaped shape in cross-section.
• Conductor body 11 or 13 may have on the side of the semiconductor body 23 in the space between the two conductor bodies protruding projection.
• a discontinuous change of the cross section is not required, but a region of larger cross-sectional area may be over an oblique region of the side surface in a region with a smaller, preferably constant, cross-section of the respective
• FIG. 8 and FIG. 9 can be produced by means of suitable masks which have suitably oblique flanks, wherein the mask according to FIG. 8
• Undercut can be performed.
• the structure according to FIG. 10 can be produced with a multi-stage masking technique, in which first the region of the respective conductor body close to the semiconductor body is applied by means of a first mask and then a further mask is used for the region with the smaller width of the conductor body.
• the region with the oblique side surface according to FIG. 14 can be defined via a mask with an undercut.
• the respective side surface 21 in the exemplary embodiments according to FIGS. 5 to 9 can be unstructured, in particular flat.
• FIG. 11 shows an example with conductor bodies 11, 13 with a discontinuous cross-section in the thickness direction and a surface structure changing in the thickness direction.
• Thickness alternate wide and narrow areas of the respective conductor body 11 and 13 alternately, so that one, preferably considered in cross-section comb-like, toothing of the respective conductor body with the
• Shaped body material is formed.
• the side surface thus has in the thickness direction Schuschitte. In lateral
• the structure is preferably the structure
• Ladder body 11, 13 structured formed.
• the exemplary embodiments according to FIGS. 15 and 16 have in common that the respective side surface is not flat. Furthermore, the respective side surface has no
• the respective side surface of the respective conductor body 11, 13 is curved.
• the lateral surface is convexly curved when viewed from the outside, whereas in FIG. 16 it is concavely curved from the outside. Due to the corresponding curved execution of the side surface of the content of the side surface can be increased accordingly.
• the concave curved embodiment according to FIG. 16 is in contrast
• the areas for electrical connection and for thermal connection in the semiconductor body 23 are larger than the area available within the carrier.
• the cross section varies such that it first increases (FIG. 15) or decreases (FIG. 16) starting from the first main body surface 17 and then decreases again (FIG. 15) or enlarged (FIG. 16).
• FIGS. 8 to 11 and FIGS. 14 to 16 have in common that the cross section of the respective conductor body in FIG
• Thickness direction in particular in shape and / or area, changes. Due to the modifications described above can - with
• Ladder body created that enlarge the contact or adhesive surface to the molding (Figure 7, 13A, 13B) or it is a body main surface of the conductor body to increase the contact or adhesive surface suitably structured formed ( Figure 6).
• a surface A of the side surface 21 may be larger than the thickness d of the conductor body 11 or 13 multiplied by one of the following quantities:
• B is one dimension, for example a maximum
• first body main surface 17 or the second body main surface 19 denotes, and / or
• Body main surface called.
• cover. 0 may be less than or equal to the area of the side surface of the first conductor body or less than or equal to the surface area of the side surface of the second
• B * d > 1.05, preferably> 1.10,> 1.20 or> 1.30, more preferably ⁇ 1.40, for example ⁇ 1.50, 1.80, ⁇ 1 , 90 or 2.00, and / or
• C * d > 1.05, preferably> 1.10,> 1.20 or> 1.30, more preferably ⁇ 1.40, for example ⁇ 1.50, 1.80, ⁇ 1 , 90 or> 2.00.
• the semiconductor body 23 from the preceding exemplary embodiments is shown in greater detail and, in addition, the connection between the semiconductor body 23 and the carrier 3 is explained in greater detail.
• the semiconductor body 23 is preferably epitaxially grown and may for example be based on II-VI or III-V semiconductor material.
• the semiconductor body 23 has a first semiconductor layer 35 and a second one
• Semiconductor layers 37 and 35 is the active region of the semiconductor body 39 for generating radiation or for
• the mirror layer may, for example, contain or consist of a metal or a metallic material.
• the first semiconductor layer 35 may be p-type or n-type.
• Semiconductor layer 37 preferably has the other conductivity type, ie is n-type or p-type.
• the first and / or second semiconductor layer may be doped for the respective type of line.
• the first conductor body 11 is electrically conductively connected to the first semiconductor layer 35.
• a plated-through hole is formed in the semiconductor body.
• the through-connection comprises a recess or recess 43 in the semiconductor body, which extends from the side facing the carrier to the side of the active region 39 facing away from the carrier.
• the recess 43 may be through the active area, the second
• a conductor material 45 is arranged, for example, a metal which is electrically conductively connected to the semiconductor body on the side facing away from the active region.
• the second conductor body 13 is preferably electrically conductively connected via the mirror layer 41 to the side of the semiconductor body 23 facing the carrier 3.
• the conductor body 11 is expediently
• an insulating layer 47 is provided, which partially is provided between the carrier 3 and the semiconductor body.
• the insulation layer is interrupted.
• Seed layers 59 and 51 may be part of a
• Semiconductor layer sequence from which a plurality of semiconductor bodies are formed, applied and subsequently patterned accordingly.
• the seed layers 49 and 51 can be applied already structured.
• the material of the shaped body 15 can, as shown, the respective
• the respective seed layer 49 and 51 is preferably made electrically conductive.
• the respective seed layer contains a metal that is for galvanic
• the shaped body and / or the respective conductor body is preferably radiopaque.
• the Shaped body can be absorbent, especially black,
• the mirror layer is arranged between the carrier and the semiconductor body, this does not significantly affect the radiation power coupled out in the case of a radiation-emitting semiconductor chip.
• the respective conductor body 11, 13 can in the
• one or more polymers or one or more ceramic materials are suitable for the shaped body 15.
• the polymeric materials may be epoxies, silicones, acrylates, polyethanes, polyterephthalates or polysilazanes. It is also possible that the polymer materials are filled with inorganic particles, such as scattering particles.
• the polymers are filled with particles of at least one of glass, TiO 2, SiO 2, ZnO, ZrO 2, BN, Si 3 N 4, Al 2 O 3 and AlN.
• the ceramic powders may be in the form of microparticles or nanoparticles, for example, loosely bound or bound in pastes or inks.
• the ceramic powders have at least one of the materials ZnO, ZrO 2, BN, Si 3 N 4, Al 2 O 3 and AlN.
• Insulation layer are also different silica or Silsesquioxane particularly suitable. Of the
• Process for curing the printed layers can be done by sintering in the oven or by local sintering by laser or by UV irradiation.

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• 2015
  • 2015-09-01 DE DE102015114579.0A patent/DE102015114579B4/de active Active
• 2016
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