WO2017036854A1

WO2017036854A1 - Optoelectronic semiconductor chip

Info

Publication number: WO2017036854A1
Application number: PCT/EP2016/069883
Authority: WO
Inventors: Korbinian Perzlmaier; Anna Kasprzak-Zablocka; Lutz Höppel
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2015-09-01
Filing date: 2016-08-23
Publication date: 2017-03-09
Also published as: DE102015114579B4; DE102015114579A1; TW201724585A; TWI636597B

Abstract

The invention relates to an optoelectronic semiconductor chip (1), comprising: a semiconductor body (23), which has an active region (39); and a carrier (3), which has a first carrier surface (5), on which the semiconductor body is arranged, and a second carrier surface (7) on the side facing away from the semiconductor body, wherein the carrier has a composite body (11, 13, 15), which has at least one electrically conductive conductor body (11, 13) and at least one electrically insulating molded body (15), wherein the conductor body extends from the first carrier surface to the second carrier surface and is connected to the active region in an electrically conductive manner, and wherein the composite body is designed to be stable with respect to tension.

Description

description

OPTOELECTRONIC SEMICONDUCTOR CHIP The present disclosure relates to a semiconductor chip having a semiconductor body. The semiconductor chip further has a carrier with a first carrier surface, on which the semiconductor body is arranged. The mechanical stability of the carrier is because of

Semiconductor body is arranged on the carrier, too

decisive for the mechanical stabilization of the

Semiconductor body. An object to be solved is to provide a support of high mechanical stability.

This object is achieved by the following disclosure and

in particular solved by the objects defined in independent claims. Further advantageous

Embodiments and developments are the subject

dependent claims.

The present disclosure does not necessarily include solely disclosure that is the solution of the above

but can also contain solutions to other problems, which can then be solved by the respective relevant features, if necessary, even without the relevant for the above task characteristics.

According to at least one embodiment, the

Semiconductor chip on an active area. In accordance with at least one embodiment, the semiconductor chip is an optoelectronic semiconductor chip. The active region may be provided for generating radiation or for receiving radiation. The semiconductor body can for a

Be designed light emitting diode or for a photodiode.

Preferably, the semiconductor body for the production of

Radiation in the infrared, visible or ultraviolet

Spectral range formed. The semiconductor body can be grown epitaxially. Epitaxially grown

Semiconductor bodies require particularly good mechanical stabilization by the carrier since unstable carriers can cause breaks in the epitaxially grown semiconductor material, which can result in significant dysfunctions in the function of the chip and complete breakdown of the chip, such as when the active region breaks.

In accordance with at least one embodiment, the carrier has a second one on the side facing away from the semiconductor body

Carrier surface on. The first and the second carrier surface can be aligned with one another, preferably aligned parallel to one another, and in particular run parallel to one another.

In accordance with at least one embodiment, the carrier has at least one electrically conductive conductor body. The conductor body may extend from the first carrier surface to the second carrier surface. The conductor body is expediently electrically conductively connected to the active region of the semiconductor body. The electrically conductive conductor body may be a first conductor body. The carrier may have, in addition to the first conductor body, a second electrically conductive conductor body, wherein the first conductor body and the second conductor body with the Semiconductor bodies are preferably electrically conductively connected on different sides of the active region. The one conductor body may be electrically conductively connected to the side of the semiconductor body facing the carrier, in particular between the carrier and the active region, and the other conductor body may be electrically conductively connected to the semiconductor body on the side of the active region facing away from the carrier. Within the carrier, the first and second conductor bodies are preferably electrically isolated from each other. In the area between the active area and the carrier, the first and the second conductor body

be electrically isolated from each other, so that in this

Area no electrically conductive connection between the first and second conductor body is made. One

Short circuit can be avoided. The first conductor body and / or the second conductor body may contain or consist of a metal or a metallic material. The first conductor body and / or the second conductor body may extend from the first carrier surface to the second carrier surface.

Features that are described below with reference to a conductor body may relate to the first and / or the second conductor body, if not explicitly

Differences between the ladder bodies are highlighted.

In accordance with at least one embodiment, the carrier has a composite body. The carrier may be formed by the composite body. The composite body can be the electrical

conductive conductor body - of course possibly additionally the second electrical conductor body, as mentioned above - have. The composite body has an electrical insulating body, preferably a shaped body, on. The shaped body can be molded onto the conductor body.

In particular, a direct interface between the

Formed body and the conductor body. Material for the molded article can be rendered flowable for the molding or can already be provided ready for use, and subsequently, in particular after the flowable material has flowed onto the conductive body, the flowable material can be solidified again to form the molded article. Of the

Shaped body can determine the mechanical properties of the wearer significantly. The molded body, since it is electrically insulating, the first and second conductor body

electrically isolate from each other. The molded body can guarantee the mechanical stability of the composite body. Seen in top view of the first and / or second carrier surface, the shaped body can have an edge region which comprises the conductor body, in particular the first and the second

Ladder body, revolves. Between the first and the second conductor body may be an intermediate region of the shaped body

be arranged. About this intermediate region of the first and the second conductor region can be electrically isolated from each other. The molded body can be made in one piece. The molded body can be seen over the entire circumference of the conductor body in plan view of the first and / or second support surface directly adjacent to the conductor body. The respective support surface can be flat or uneven.

For example, the first carrier surface may be uneven, with the unevenness preferably resulting from the shaped body. The second carrier surface may be flat, for example.

In accordance with at least one embodiment, the composite body is designed to be resistant to tensile stress. Tensile loads can be caused in particular by forces acting in one direction, which are aligned along the first support surface, the second support surface or preferably parallel thereto. The tensile load force can in particular perpendicular to the

Be directed interface between the molding and the conductor body and try to solve the molding from the conductor body. Since the composite body comprises both a conductor body and the shaped body, it is of particular advantage if the composite body is designed to be resistant to tensile stress, since the carrier is not composed of one part but of several,

preferably consists of successively formed parts or is formed.

The tensile stability of the composite body is preferably ensured only by the formation of the conductor body, which is formed with respect to the molding body so that the connection between the molding and the conductor body is particularly stable.

The conductor body may be formed so that the force parallel to the first and / or second support surface, which is required to release the shaped body from the conductor body, per unit area of the contact surface

Shaped body / conductor body greater than or equal to 10 MPa, preferably greater than or equal to 50 MPa, more preferably greater than or equal to 100 MPa.

In accordance with at least one embodiment, the tensile strength of the connection between the shaped body and the conductor body, in particular for forces which are aligned along the first carrier surface and / or along the second carrier surface, is increased. In accordance with at least one embodiment, the shaped body is integrally formed on the semiconductor body and / or the conductor body. The semiconductor body or semiconductor material for the semiconductor body may therefore already be present, as well as possibly a conductor body before material for the

Molded body applied and the shaped body is formed. The shaped body can be attached to a side surface of the

Semiconductor body or arranged between the semiconductor body and the molded body elements, which are not semiconductive suitably, such as a

Power distribution layer and / or a mirror layer,

be formed. The shaped body can simulate the surface profile which is defined by the structures following it. Accordingly, the shaped body may be uneven on the side facing the semiconductor body.

The conductor body is expediently applied to the semiconductor material of the semiconductor body prior to the formation of the shaped body. In accordance with at least one embodiment, the conductor body has a first body main surface which faces the semiconductor body. A second main body surface of the

Ladder body is turned away from the first main body surface. The conductor region may have an excellent view when viewed from the first and / or second main body surface

Have longitudinal direction. Preferably, the conductor body is elongated. The first and the second

Body main surface are preferably over at least one

Side surface of the conductor body connected to each other. The first and second body major surfaces may be aligned or parallel with each other. Preferably, the tensile strength of the Composite body increased. The respective main body surface can be flat.

The following statements, when referring to a side surface, apply to at least one, any selected plurality, or all of the side surfaces of the

Ladder body, in so far as this several side surfaces

having. If the ladder body has an excellent longitudinal direction and / or a longer side when viewed from the first body main surface, the following explanations preferably apply to the lateral surface bounding the ladder body in or along the longitudinal direction. Are two

Provided ladder body, the embodiments are preferably at least for a side surface of a conductor body, which faces the other conductor body, preferably for the two mutually facing side surfaces of the conductor body. Furthermore, the explanations regarding the side surface may alternatively or additionally also apply to a surface region in which the side surface of the first conductor body has the side surface of the second surface facing the first conductor body

Ladder body covered and / or vice versa. The respective side surface of the conductor body may be flat, curved - convex or concave - and / or structured. The respective side surface may be oblique or perpendicular to the first body main surface, second body main surface, first

Support surface and / or second support surface extend. Slant preferably means neither perpendicular nor parallel.

It has been found in in-house tests that carriers with composite bodies with two conductor bodies and a shaped body preferably tear or break where the surface of the first conductor body faces that of the second conductor body. Accordingly, one is Forming the side surface of the conductor body to increase the tensile strength in this area particularly advantageous but not necessarily limited to this area. In accordance with at least one embodiment, the conductor body is provided for increasing, preferably adhesion-promoting,

Contact surface formed between the conductor body and the molded body. The contact surface can be increased, for example, by increasing the surface area of the side surface, for example by tilting the surface

Side surface and / or through structured execution of the side surface. Alternatively or additionally, the conductor body can be formed by the shaped body, so that the

Shaped body seen from one side of the body

Conductor body extends through the conductor body to the other side of the conductor body, so that a continuous transverse strut of the shaped body is formed, which in

Seen on the first and / or second support surface extends over the region of the conductor body. For example, a transverse strut of the molding seen from one side of the first conductor region over the first

Ladder area covered area to the intermediate area. Starting from the intermediate region, in particular along a straight line, the transverse strut can continue over the region of the second conductor body and again on the side facing away from the intermediate region

Be connected edge region of the molding. Furthermore, a partial region of the shaped body can be arranged between a side of the conductor body facing the second carrier surface and the second carrier surface.

In accordance with at least one embodiment, the semiconductor chip is for electrical contacting on the part of the second Support surface formed. For this purpose, the second body main surface of the first conductor body and / or the second body main surface of the second conductor body is located

expediently free on the part of the second support surface. The respective main body surface may be provided for electrically conductive connection with electrically conductive material, for example a solder. The respective body main surface can be connected to an external electrical connection

Connection conductor, such as a conductor track of a printed circuit board, be provided.

In accordance with at least one embodiment, one, an arbitrarily selected plurality or all of the following elements have a thickness which is less than or equal to 300 μm, preferably less than or equal to 250 μm, particularly preferably less than or equal to 200 μm, for example less than or equal to 150 μm or less than or equal to 100 ym is: carrier,

Composite body, conductor body, molded body. In the following, in the case of doubt, the thickness may be the maximum, the minimum or an average value of the thickness of the respective element, for example the arithmetic or geometric mean value between maximum and minimum thickness,

be used.

According to at least one embodiment, the first body main surface covers the second body main surface, in particular completely and / or vice versa, as seen in plan view of the respective body main surface and / or the first or the second carrier surface.

According to at least one embodiment, the area of the first body main surface is larger than the area of the surface second main body surface or vice versa. A larger first main body surface offers the advantage that the

Semiconductor body facing surface is large and thus resulting in operation of the semiconductor chip heat loss from a large, thermally well conductive surface of the

Ladder body can be included. A large

Area on the part of the second body main surface, which expediently exposed by the second support surface, allows a good electrical connectivity of the

Semiconductor chips on the side of the second support surface, since a large area is provided for contacting.

According to at least one embodiment, the conductor body is designed such that the conductor body seen in cross-section, starting from the first body main surface in

Direction of the second main body surface tapers or

increased. Accordingly, a transverse dimension of the conductor body from the first body main surface may decrease or increase. The reduction, rejuvenation or

Magnification can be continuous, uniform, monotonic, and / or continuous.

According to at least one embodiment, the side surface or a main extension direction of the side surface is obliquely relative to the first support surface, to the first

Body main surface, aligned with the second support surface and / or the second body main surface. Due to the oblique orientation, the surface of the side surface compared with a perpendicular to the preferably parallel

aligned two main body surfaces, extending

Side surface to be enlarged. Because of through the

enlarged surface enlarged contact surface for Shaped body, the tensile strength of the composite can be improved.

According to at least one embodiment, the side surface, for example, seen in plan view of one of the support surfaces and / or in cross section along the thickness direction of the conductor body, one or more undercuts. Alternatively, the side surface can be formed without undercuts. A training with undercut offers the advantage that in the area of the respective undercut one

Abutment surface of the conductor body for the molding can result. The respective abutment surface preferably acts as an abutment surface in the lateral direction, thus in particular in the pulling direction. The respective abutment surface can the

Significantly increase draft stability.

Starting from an interface between moldings and

Conductor body may be given in a direction parallel to the first and / or second support surface or parallel to the first and / or second main body surface, the following sequence: partial region of the shaped body, partial region of the conductor body, partial region of the shaped body. With others

In words, in the ladder body a

Be formed abutment area, the one the

facing the remaining part of the conductor body

Has abutment surface. Between the abutment surface and the remaining part of the conductor body, a partial region of the shaped body can be arranged. The molded body can be molded onto the abutment surface. By means of the undercuts, a positive connection between the conductor body and molded body can be realized. This preferably supports the non-positive adhesive connection between the molded body and the conductor body. Is the side surface without undercutting, so there are

expediently no abutment areas.

In accordance with at least one embodiment, the conductor body is connected in a form-fitting and / or non-positively connected manner to the molded body. The conductor body can only positively or only positively or with a combination of positive and non-positive with the molding

Be connected.

In accordance with at least one embodiment, the side surface is provided with a surface structure. The

Surface structure may have undercuts or be formed without undercuts. The

Surface structure may be formed by one or a plurality of structural elements. The cross section of the

Structural elements may be in the thickness direction, for example perpendicular to the first carrier surface, the second carrier surface, the first body main surface and / or the second

Body main surface, change or in the thickness direction

be constant. The structural elements can along the

Side surface seen to be evenly distributed. The respective structural element can be formed by a bulge or indentation of the conductor body. The structural elements may have lateral and / or vertical protrusions or indentations

exhibit. The respective structural element is preferably designed such that it can be shaped or formed with the material intended for the formation of the shaped body, for example a flowable molding compound.

According to at least one embodiment, the

Surface structure along the side surface seen on the way from the first body main surface to the second Body main surface uniform. With a uniform surface structure, in particular over the entire course from the first to the second body main surface, the

Conductor body be formed so that the cross section of the conductor body remains the same in the thickness direction, so preferably does not change in surface area and / or shape. A uniform surface structure may be

for example, by one in supervision of the first

Body main surface formed comb-like, for example, sawtooth-like structure of the side surface. A uniform surface structure has the advantage that it can be realized in a simple manner by means of a mask, for example by manufacturing the mask with the structure for the side surface and subsequently the conductor body using this mask, for example galvanically,

is deposited.

According to at least one embodiment, the changes

Surface structure along the side surface seen on the way from the first body main surface to the second

Body main surface.

As the surface structure changes along the side surface, the cross-section may change in the thickness direction, for example, in terms of shape and / or area.

The change can be continuous or discontinuous. A discontinuous change may be due to an in

Thickness direction alternating sequence of areas

different shape and / or different

Surface area to be realized. A discontinuously changing surface structure in the thickness direction may be formed by a comb-like formation of the side surface seen in cross-section perpendicular to the first body main surface. In the case of a continuous change in the surface structure, the cross-sectional area in the thickness direction-seen, for example, away from the first main body surface-can increase or decrease continuously.

In accordance with at least one embodiment, a surface A of the side surface is greater than the thickness d of the conductor body multiplied by one of the following quantities:

B, where B is one dimension, for example a maximum

Denotes longitudinal dimension, such as the length, the first body main surface or the second body main surface, and / or

C, where C is half the circumference of the first or second

Body main surface called. According to at least one embodiment, 0 is the area of the area in which the facing each other

Side surfaces of the first and the second conductor body cover each other and it is true that 0 is greater than B * d and / or C * d. 0 may be smaller than or equal to the area A of the side surface of the first conductor body and / or less than or equal to the area A of the side surface of the second conductor body.

According to at least one embodiment:

- A / (B * d)> 1.05, preferably> 1.10,> 1.20 or> 1.30, more preferably ^ 1.40, for example ^ 1.50, 1.80, ^ 1 , 90 or 2.00, and / or

- A / (C * d)> 1.05, preferably> 1.10,> 1.20 or> 1.30, more preferably ^ 1.40, for example ^ 1.50, 1.80, ^ 1 , 90 or> 2.00.

According to at least one embodiment: - 0 / (B * d)> 1.05, preferably>1.10,> 1.20 or> 1.30, more preferably ^ 1.40, for example ^ 1.50, 1.80, ^ 1 , 90 or 2.00, and / or

- 0 / (C * d)> 1.05, preferably> 1.10,> 1.20 or> 1.30, more preferably ^ 1.40, for example ^ 1.50, 1.80, ^ 1 , 90 or> 2.00.

In accordance with at least one embodiment, a partial area of the shaped body is a connecting area which, seen from one side of the side view of the first or second carrier area, is viewed from above

Conductor body over an area covered by the conductor body in the plan view of the first and / or second body main surface area to another side of the conductor body

runs. In this case, transverse struts can be formed by the conductor body. The connection area can be in

Circumferential, so azimuthally seen to its extension direction, only partially - for example, if the

Connecting portion forms a portion of one of the support surfaces - or completely - for example, if the

Connecting area the conductor body inside the carrier durchformt or penetrates - be surrounded by the conductor body. So it can be a page or no page of the

Connection area exposed. The exposed side may, for example, be a partial region of the second carrier surface. The connection region can be transverse to, in particular as

Cross strut, or along the, in particular as a longitudinal strut, excellent longitudinal direction of the conductor body. For example, the connection area is perpendicular to the longitudinal direction. It has been found that supports with a composite body preferably break along a longitudinal direction of the conductor body, so that an additional

Querverstrebung as described is particularly advantageous. A Längsverstrebung is also already advantageous. If the carrier has two conductor bodies, a first connection region preferably extends in a plan view over the first conductor body and a further connection region extends over the second conductor body. Preferably

Connection areas over the first and the second

Ladder area aligned. For example, the further connection area continues the first connection area, preferably in a straight line.

In accordance with at least one embodiment, the shaped body projects beyond the conductor body on the side of the semiconductor body in a partial area. According to at least one embodiment, the

Semiconductor body epitaxially grown and the semiconductor chip is growing substrate, that is free of the substrate on which the semiconductor body was epitaxially grown.

Accordingly, the carrier is not subject to the

comparatively stringent requirements, to a

Growth substrate are made.

In accordance with at least one embodiment, a connection area of the semiconductor chip is formed by means of the side of the conductor body facing away from the semiconductor body. For example, the second body main surface of the first conductor body and / or the second body main surface of the second

Conductor body partially or completely from

Be covered semiconductor body. The pad can therefore be arranged below the semiconductor body.

In accordance with at least one embodiment, the conductor body has a plurality of electrically within the carrier on separate sections. The partial regions of the conductor body are preferably electrically conductively connected to the active region in each case. Between two

adjacent portions of the Leiterköpers may be arranged in each case a portion of the shaped body. As a result, one or a plurality of struts-for example, transverse and / or longitudinal struts-can be formed, which extend from one side of the first conductor body between two partial regions to another side of the conductor body. The respective strut can, starting from the intermediate region between the first and the second conductor body, between two

Extend portions of the second conductor body. In

Thickness direction, these struts can run continuously from the first support surface to the second support surface.

Preferably struts between portions of the first and second conductor body are aligned with each other or offset from each other. When aligning the

Striving through different conductor body to each other, a continuous molding body area may be formed. One

Although continuous molding area increases the stability against fractures or cracks in one direction, but can

at the same time increase the risk of fractures or cracks in another direction, for example, perpendicular to the first direction. The latter risk of fracture or cracking can be in a staggered arrangement of the struts by different

Ladder body can be reduced. The number of portions of the first conductor body and the second conductor body may be different. In accordance with at least one embodiment, the conductor body is formed in one piece. In this case, it does not have a plurality of subareas. A particularly advantageous embodiment is shown below:

An optoelectronic semiconductor chip having a semiconductor body having an active region, and a carrier having a first carrier surface, on which the semiconductor body is arranged, and a second carrier surface on the side facing away from the semiconductor body, the carrier having a composite body, the at least one electrically leifähigen Conductor body and at least one electrically insulating molded body, wherein the conductor body extends from the first support surface to the second support surface and is electrically connected to the active region.

Features related to different

Embodiments or embodiments are described, of course, with each other and also in im

Combined features described below.

Further advantages, features and expediencies will become apparent from the following description of examples in

Connection with the figures. FIGS. 1A and 1B show an example of a semiconductor chip on the basis of a schematic plan view (FIG. 1A) and a schematic sectional view (FIG. 1B).

Figures 2A and 2B illustrate a situation of mechanical stress for the semiconductor chip according to Figures 1A and 1B.

Figures 3 to 11, 13A, 13B, and 14 to 16 show

Embodiments of semiconductor chips using schematic Top views (Figures 3 to 5, 13A and 13B) or schematic sectional views (Figures 6 to 11 and 14 to 16).

FIG. 12 shows an exemplary embodiment of a detailed sectional schematic view

Semiconductor body of the semiconductor chips from the preceding figures and its connection to the carrier.

The same, similar and equally acting elements are provided in the figures with the same reference numerals. The

Elements shown are not necessarily

shown to scale. Rather, individual elements may be exaggerated for better understanding. FIG. 1A shows a plan view of an exemplary embodiment of a semiconductor chip, and FIG. 1B shows the associated sectional view.

The semiconductor chip 1 has a carrier 3. The carrier 3 has a first carrier surface 5 and a second carrier surface 7. The respective carrier surface 5 or 7 may be a main surface of the carrier. The two support surfaces 5 and 7 may be connected via one or a plurality of side surfaces 9 of the carrier. The area of a

Carrier surface as the main surface may be larger than that of each of the side surfaces 9. The second support surface 7 is

expediently facing away from the first support surface 5. On the first support surface 5, a semiconductor body 23 of the semiconductor chip 1 is arranged. The carrier 3 has a first conductor body 11. Of the

Carrier 3 has a second conductor body 13. Furthermore, the carrier 3 has a shaped body 15. The molded body is electrically insulating, for example, an electric insulating material or an electrically insulating material composition. The first conductor body 11 and the second conductor body 13 are embedded in the molded body 15 and deformed by it. The respective conductor body 11 or 13 expediently extends from the first carrier surface 5 to the second carrier surface 7. Subareas of the first

Support surface 5 and the second support surface 7 can through the molded body 15 and the respective conductor body 11th

or 13 may be formed. The two conductor bodies 11 and 13 are electrically insulated from each other via the shaped body 15 within the carrier 3. The respective side surface 9 is formed by the shaped body 15. The side surface 9 may have separating tracks, for example, from the

Production of the semiconductor chip (see below).

The respective conductor body 11, 13 has a first

Body (main) surface 17 and a second body (main) surface

19. The first body main surface 17 faces the semiconductor body 23. The first body main surface 17 is exposed on the side of the first support surface 5 and may in particular be part of this support surface. The second main body surface 19 faces away from the semiconductor body. The second

Body main surface 19 lies on the side of the second

Carrier surface 7 free and can in particular part of this

Be carrier surface. The respective first and second

Body main surfaces are connected to each other via at least one or, as shown, a plurality of side surfaces 21. The semiconductor body 23 is connected to the carrier 3

expediently mechanically stable and / or permanently connected. The semiconductor body has an optoelectronically active region, for example a to Radiation generation or radiation receiving trained active area. The semiconductor body may, for example, according to a diode, for example a light emitting diode or a

Photodiode be formed. The conductor bodies 11 and 13 are connected to the semiconductor body 23 on different sides of the active region, as will be explained in more detail later (compare the description in connection with FIG. 12). Therefore, the first conductor body 11 and the second conductor body 13 make external electrical contacts of the

The respective conductor body, in particular its second facing away from the semiconductor body 23 second

Body main surface 19, for electrical contacting, for example, for soldering the semiconductor chip with an external electrical connection of a connection carrier, on which the semiconductor chip is arranged, for example one

Conductor of a printed circuit board, or a conductor area, such as a lead frame, in a housing for a

optoelectronic component, be provided. The respective main body surface 17 or 19 of the first and / or second conductor body is expediently from

Semiconductor body covered.

As can be seen in the plan view in FIG. 1A, the respective conductor body has an excellent longitudinal direction. The first and the second conductor body may, for example, have a rectangular shape in plan view. The two

Ladder bodies are, in particular along their longitudinal direction, aligned with each other. It should be noted that features described in connection with the exemplary embodiment for a carrier with two conductor bodies can likewise also be used for a carrier without a second conductor body. In addition, features that are common in the general part of Description are also described for the

Embodiments are used and vice versa.

The carrier 3 is formed as a composite body, the

Ladder body 11, 13 and the molded body 15 includes. As can be seen in the plan view in FIG. 1A, the shaped body 15 has an edge region 25 which completely surrounds the first and the second conductor body in the circumferential direction. Between the two conductor bodies 11 and 13, an intermediate region 27 of the shaped body is arranged, which extends consistently between the two conductor bodies and connects one side of the edge region 25 with the side of the edge region 25 of the molded body facing away from this side in a top view. The edge region 25 can be designed, for example, as a frame. The frame can be provided with a realized by the intermediate region 27 longitudinal strut.

The edge region 25 preferably has a width that is less than or equal to 50 ym in plan view of the second support surface. Preferably, the width of the edge region 25 is greater than or equal to 20 ym. A thickness of the shaped body 15 and / or the respective conductor body 11 or 13 may be less than or equal to 200 ym, preferably less than or equal to 100 ym. The carrier as a whole may have a thickness which is less than or equal to 200 μm, preferably less than or equal to 100 μm. A length and / or a width of the carrier or of the respective conductor body can be less than or equal to 3 mm in plan view of the first or second carrier surface. Alternatively or additionally, the length and / or the width of the carrier or of the respective conductor body can be greater than or equal to 300 ym in plan view of the first or second carrier surface. In the excellent longitudinal direction, the length of the respective conductor body 11, 13 can be twofold or more of the width of this conductor body seen in plan view of the second support surface 7. The width of the

Intermediate area 27 is preferably chosen such that an electrical short circuit during assembly of the semiconductor chip to a connection carrier, for example by means of a solder, is avoided. The distance may be greater than or equal to 60 μm, preferably greater than or equal to 150 μm, particularly preferably greater than or equal to 250 μm. With larger chips, of course, larger distances are possible or expedient than with smaller chips. If the distance can change in the

Doubt, the maximum or the minimum distance will be used.

Since the two external connection surfaces can be connected as surfaces of the first and second conductor body on the side facing away from the semiconductor body 23 of the carrier 3, the semiconductor chip 1 by means of SMD techniques (SMD: surface mountable device

Component) are handled and contacted.

The following is a method of making a

Described plurality of semiconductor chips, which is preferably used for the semiconductor chip described in more detail above and below. Features related to the

Semiconductor chip are described, can thus also refer to the process and vice versa.

First, a semiconductor layer sequence for the

Semiconductor body 23 of the later semiconductor chip

provided. The semiconductor layer sequence is on one

Substrate arranged, for example, the growth substrate on which the semiconductor layer sequence, epitaxially grown, has. The semiconductor layer sequence has a active area. The semiconductor layer sequence is divided into a plurality of semiconductor bodies, each having an active region. This active area can be made up of a partial area of the active area of the

Semiconductor layer sequence may be formed. In addition, a plurality of conductor bodies on the semiconductor layer sequence or in each case at least one conductor body, preferably two conductor bodies, arranged or formed on a semiconductor body, so that the respective conductor body is electrically conductively connected to the active region. Are two

Conductor body provided for a semiconductor body, they are preferably electrically conductive on different sides of the active region with the semiconductor body

connected. Preferably, after the formation of the conductor body, for example, before or after the training of

Semiconductor body, a mass is provided for a shaped body layer. The mass is provided either flowable or in the solid state and subsequently rendered fluid, for example liquefied. Then, the flowable mass is molded to the conductor body and cured after molding to form the shaped body layer.

This creates a carrier layer, the one

Composite layer comprising the shaped body layer and the conductor body. In other words, a composite is formed which has the composite body layer and the semiconductor body arranged on the composite body layer. The composite is then singulated into semiconductor chips, each comprising a semiconductor body and a composite body. Side surfaces of the composite body can therefore separation tracks, for example

Sawing traces. The shaped body of the composite body comprises a piece of the shaped body layer. Of the

Composite body further comprises one or two conductor body. Before the separation, the substrate is expediently thinned or partially or completely removed.

Figures 2A and 2B illustrate the handling of the

Semiconductor chips, for example, the recording of a

Semiconductor chips 1, about to place this on a suitable for contacting connection carrier. When handling semiconductor chips 1 with the one described above

Composite body has been found that when the

Semiconductor chip, for example by means of a holding device 29 in an edge region, for example, on the part of the second support surface 7, is held, so that the mechanical

Support of the carrier 3 mainly in the edge area

takes place, and subsequently a load which is symbolized by the force F, for example in one

central region occurs, the carrier 3 of the chip and thus the semiconductor body breaks. In particular, it has been found that the rupture occurs in a plurality of chips in the intermediate region 27 of the molding. The force F leads, for example because of the bending moment caused, to a tensile load which acts on the carrier 3, and in particular on the contact surface between the shaped body 15 and the respective conductor body 11 or 13, in particular in the intermediate region 27. The tensile load acts

in particular in the lateral direction and is indicated in Figure 2A by the horizontally oriented arrows. If the force F is too large, the semiconductor chip breaks as shown in FIG. 2B. The holding device 29 can be realized for example by a nozzle which holds the semiconductor chip 1 by negative pressure. Already exerted by the negative pressure necessary for the holding function force may be sufficient to the carrier 3 as shown in Figure 2B and thereby make the chip useless. Similar mechanical stresses can occur if a chip is placed on soldering areas (solder pads) on a connection carrier.

The following measures are proposed, such as

Tensile stability of the carrier 3 with the composite body comprising the molded body 15 and the conductor body 11 and 13, can be improved.

The tensile stability can be increased for example by the fact that the contact surface or adhesive surface, ie the surface between the shaped body 15 and the respective conductor body 11 or 13, in which the molded body and the

Conductor body adjacent to each other, is increased. For this purpose, for example, the surface of the respective conductor body 11, 13 are increased. Preferably, the measures for increasing the adhesive surface or contact surface between the shaped body and the conductor body are selected so that the necessary modifications already during the formation of the conductor body, for example by galvanic

Apply, can be carried out and subsequently the molding as a flowable molding compound to the already

can flow prefabricated conductor body. After curing of the molding compound, the contact surface or adhesive surface between the molding and the conductor body is increased.

The contact or adhesive surface is preferably enlarged

relative to a carrier having conductor bodies of the same thickness and / or a shaped body of the same thickness, as the zugstabilisierte carrier. The carrier preferably need not be changed in terms of dimensions. The

Contact surface between moldings and the respective Ladder body may be opposite a cuboid or

cube-shaped conductor body, approximately as shown in Figures 1A and 1B, are significantly increased. This can

be achieved for example by suitable design of the respective conductor body. Examples are given below, the contact area being increased in all examples.

As already mentioned above, initial breakage points of the carrier 3 occur predominantly in the intermediate region 27, which is why it is particularly expedient to increase the tensile stability in this region. Some of the ones presented below

Modifications are therefore limited to the mutually facing side surfaces of the conductor body, but this is not to be regarded as limiting, since appropriate measures alternatively or additionally for other side surfaces, for example, facing away from the intermediate region

Side surface and / or connecting these side surfaces

Side surfaces of the respective conductor body can be applied. In the intermediate region 27, however, the modifications are particularly advantageous.

Of course, the measures described below, even if they are described separately from each other, can complement each other insofar as they are not mutually exclusive.

In the figures 3 and 4 each an embodiment with a structured side surface 21 of the conductor body 11, 13 is indicated. In FIGS. 3 and 4, the mutually facing side surfaces 21 of the conductor bodies 11, 13 are each similarly structured, wherein the individual

Structural elements are aligned. Deviating from the illustration, the side surfaces can also be different be structured and / or the structural elements of different side surfaces seen in plan offset from each other

be arranged. According to Figure 3, the side surface 21 of the respective

Ladder body structured like a sawtooth. The single ones

Structural elements are considered to be away from the respective conductor body and / or in the direction of the other conductor body

formed tapered projections. Seen from the outside, the structural elements can thus be from one end of the

Beginning conductor body, especially in the lateral direction, widen, for example, until the structural elements pass into a main body of the respective conductor body. The structure in Figure 3 is in plan view of the second

Support surface 7 executed undercuts. In particular, between the shaped body 15 and the respective ladder body for loads in the pulling direction, that is, for example, perpendicular to the excellent longitudinal direction of the respective

Ladder body and / or the main extension direction of the structured side surface, a non-positive connection formed. This is not for example by a

positive connection, as for example by

Abutment surfaces, which can resist a separation of the molded body and the conductor body under tensile load, is supported.

In contrast, in FIG. 4, the structural elements, viewed in a plan view of the second support surface 7, have undercuts 31 which form abutment surfaces which increase the tensile stability of the

Composite, especially in addition to increasing the adhesive surface, can increase. The structural elements in Figure 4 are also formed as projections which are between them Define recesses, wherein the recesses are initially seen narrow from the outside of the conductor body and then widen. In the direction of the main body of the respective conductor body, the recesses can then taper again before the structural elements in the

Pass main body. On the basis of the undercut, starting from an end face 53 of the structural element-the end face is expediently a lateral end face and / or the end face facing the other ladder body-the conductor body is given the following sequence in plan view of the second support face: Material of the conductor body (this forms

expediently the structural element), material of the

Shaped body, material of the conductor body (this forms expediently the main body of the conductor body). At the end surface 53 of the molded body 15, in particular its intermediate region 27, adjacent.

The surface structure in Figs. 3 and 4 is

uniform, so that the cross section of the respective conductor body does not change neither in shape nor surface area on the way from the second body main surface 19 to the first body main surface 17 (not explicitly shown in the figures). The structures according to FIGS. 3 and 4 can be produced, for example, in such a way that via a mask on the

Semiconductor material of the semiconductor body 23 free areas are defined, which have the desired shape for the respective conductor body shape. The mask may, for example, a suitably structured mask, for example a

Photoresist mask, his. The mask material-free area is, for example, galvanically, with conductor material for the

Ladder body filled. The conductor body is metallic, for example. Since the surface structure is uniform, the mask can be compared with others described below Structures are comparatively easy to form, for example, with only one mask layer and / or without undercuts or inclined flanks. In the exemplary embodiment according to FIG. 5, a plurality of connecting regions 33 of the molded body 15 are provided which, in particular in a plan view of the second

Support surface 7 seen from the one side of the respective conductor body 11 and 13 extend to the other side, for example, from the edge region 25 to

Intermediate region 27. Through the connecting regions 33, transverse struts may be formed in the molded body. It may alternatively or additionally be provided longitudinal struts, which extend along the excellent longitudinal direction of the respective

Ladder body extend (not shown). As shown in FIG. 5, the respective conductor body can have a plurality of partial regions, in the exemplary embodiment three partial regions, wherein between each two adjacent partial regions of the same conductor body a respective connection region 33 is arranged. The subregions of the respective conductor body may be continuous, that is to say separated by the entire carrier, so that the connection region 33 can extend continuously from the second carrier surface 7 as far as the first carrier surface 5. Alternatively and / or additionally thereto, one or a plurality of connection regions

33 be provided, wherein the respective connection portion 33 in the circumferential direction - ie in particular azimuthal to its extension direction - is completely surrounded by the conductor body material and / or only partially, for example, not limited on one side, the conductor body.

For example, according to the one shown in FIG

Embodiment connecting areas 33 are provided, which are exposed by the second support surface 7, but otherwise in the circumferential direction of the respective conductor body 11, 13th

are limited. According to FIG. 7, the connection region 33 is completely surrounded by the conductor body material as viewed in the circumferential direction along its extension direction. Such

continuous connecting regions, as shown in Figures 5 to 7, significantly increase the stability and

in particular also the tensile stability of the carrier 3.

The conductor bodies 11, 13 according to FIG. 5 can be formed by a suitably formed mask with subsequent deposition, for example electrodeposition, sputtering or

Evaporation, the portions of the conductor body 11 and the portions of the conductor body 13 are formed. Not to be covered with conductor material areas are suitably covered with the mask material.

In the structure according to FIG. 6, first of all a mask for the region of the respective semiconductor body is provided

Ladder body - that's the area between the

Connection region 33 and the semiconductor body in Figure 6 - provided. The areas that are free of the mask become

filled accordingly. The mask can then be removed. Subsequently, a further mask can be provided, in which a part of the mask for the

Connection area 33 provided area covered. If the conductor material is subsequently deposited, the structure shown in FIG. 6 with a recess for the result

Connection region 33. The procedure according to FIG. 7 can be followed similarly, wherein, after the formation of the recess, a region of the conductor body which is remote from the semiconductor body is additionally formed, which forms the region for the body

Limiting portion 33 provided region of the respective conductor body on the semiconductor body distant side. This semiconductor body-remote region of the conductor body can be defined by means of a further mask, the mask which defines the recess preferably still not being removed in order to prevent conductor material from entering the recess actually provided for the connection region. Alternatively, the mask structure defining the recess may be overmolded to form the

form semiconductor-distant area. In this case, no additional mask is required.

After removing the last mask used in the process, those of the mask and the conductor material of the

respective conductor body free areas - these include the connecting portions 33 - are filled with the mass for the molding.

Connecting regions 33 through different conductor bodies 11 and 13 can be aligned with each other, as shown in FIG. A connection region 33 through a conductor body can pass over the intermediate region 27

straight line in a connection region 33 pass through or open the other conductor body. Alternatively or additionally, connecting regions 33 can be arranged offset from one another by different conductor bodies 11 or 13, as shown in FIGS. 13A or 13B. A staggered

Arrangement has opposite to one another aligned

Arrangement the advantage that the risk of breakage along a formed by the connecting portions 33

continuous molded body portion extending from a

Starting conductor body extends over the intermediate region 27 and continues over the other conductor body, is avoided. The number of connecting regions 33 via different conductor bodies 11, 13 can, as shown in FIG. 13B, different or, as shown in Figure 13A and Figure 5, be the same. Accordingly, the first conductor body 11 and the second conductor body 13 can be the same number

Have partial areas or a different number of partial areas. Assign the ladder body on a different number of sub-areas, so on the number of

Subareas of a ladder body used at the

Semiconductor body facing away from the carrier exposed, the polarity of the conductor body formed by the

Connection to the active area - n- or p-conducting - are displayed.

The embodiments according to FIGS. 8 to 10 and 14 have in common that the first main body surface 17 and the second main body surface 19 are each different

Have surface content. In Figure 8, the first

The body main surface 17 is smaller than the second body main surface 19, and in Figs. 9 and 10, the reverse is the case. In the ladder bodies in Figure 8 increases the

Conductor body in cross section, which was suitably taken perpendicular to the excellent longitudinal direction, the

respective conductor body 11 and 13 seen continuously from the first body main surface 17 away. In the conductor bodies in Figure 9, the conductor body tapers in cross section, which expediently perpendicular to

taken longitudinal direction of the respective conductor body 11 and 13, respectively, seen continuously away from the first body main surface 17. In FIGS. 8 and 9, at least one side surface 21 of a conductor body 11, 13, expediently a side surface 21 facing the other conductor body 11 or 13, is inclined. There may be two opposite side surfaces 21 of the same

Ladder body oblique. For example, a Angle the respective oblique side surface with the

Surface normals of the first and / or second

Body major surface, 20 ° or more, preferably 30 ° or more, or 40 ° or more.

In the embodiment of Figure 8 is the for

electrical contact on the part of the second

Body surface 19 available surface advantageously large, while in Figure 9 and 10, the available for the heat absorption of the waste heat from the semiconductor body surface is advantageously large.

In FIGS. 8 and 9, the cross section changes in FIG

Thickness direction continuously, while it changes discontinuously in Figure 10. On an area with great

Cross-sectional area follows there from the respective first

Body main surface 17 away seen an area with a smaller cross-sectional area. The conductor bodies 11, 13 are preferably arranged relative to one another such that an intermediate region 27 of the shaped body 15 is formed between them, which has a t-shaped shape in cross-section. The respective

Conductor body 11 or 13 may have on the side of the semiconductor body 23 in the space between the two conductor bodies protruding projection.

As shown in Figure 14, a discontinuous change of the cross section is not required, but a region of larger cross-sectional area may be over an oblique region of the side surface in a region with a smaller, preferably constant, cross-section of the respective

Pass on ladder body. The structures according to FIG. 8 and FIG. 9 can be produced by means of suitable masks which have suitably oblique flanks, wherein the mask according to FIG. 8

undercut-free and the mask for Figure 9 with a

Undercut can be performed. The structure according to FIG. 10 can be produced with a multi-stage masking technique, in which first the region of the respective conductor body close to the semiconductor body is applied by means of a first mask and then a further mask is used for the region with the smaller width of the conductor body. The region with the oblique side surface according to FIG. 14 can be defined via a mask with an undercut. The respective side surface 21 in the exemplary embodiments according to FIGS. 5 to 9 can be unstructured, in particular flat.

FIG. 11 shows an example with conductor bodies 11, 13 with a discontinuous cross-section in the thickness direction and a surface structure changing in the thickness direction. In

Thickness alternate wide and narrow areas of the respective conductor body 11 and 13 alternately, so that one, preferably considered in cross-section comb-like, toothing of the respective conductor body with the

Shaped body material is formed. The side surface thus has in the thickness direction Hinterschitte. In lateral

However, the structure is preferably the structure

undercut free. Thus, it can be seen in Zugbelastungsrichtung a non-positive adhesive connection between the conductor body and the respective shaped body are formed, which is not supported in particular by a positive connection. The shown in Figure 11 Structure can also be done using multiple masking levels

getting produced. In Fig. 11, the two are

opposite side surfaces 21 of the respective

Ladder body 11, 13 structured formed.

The exemplary embodiments according to FIGS. 15 and 16 have in common that the respective side surface is not flat. Furthermore, the respective side surface has no

rectilinear main direction of extension. In particular, the respective side surface of the respective conductor body 11, 13 is curved. In FIG. 15, the lateral surface is convexly curved when viewed from the outside, whereas in FIG. 16 it is concavely curved from the outside. Due to the corresponding curved execution of the side surface of the content of the side surface can be increased accordingly. The concave curved embodiment according to FIG. 16 is in contrast

advantageous because the areas for electrical connection and for thermal connection in the semiconductor body 23 are larger than the area available within the carrier.

In FIGS. 15 and 16, the cross section varies such that it first increases (FIG. 15) or decreases (FIG. 16) starting from the first main body surface 17 and then decreases again (FIG. 15) or enlarged (FIG. 16). The respective magnification

or reduction can be continuous. The main body surfaces 17 and 19 may be the same size. FIGS. 8 to 11 and FIGS. 14 to 16 have in common that the cross section of the respective conductor body in FIG

Thickness direction, in particular in shape and / or area, changes. Due to the modifications described above can - with

Exception to the measures according to FIGS. 6 and 7, 13A and 13B

- It can be achieved that the surface of the side surface 21 is increased. This surface can be through the

Side surface realized part of the adhesive or contact surface or at least determine this. In Figures 6, 7, 13A and 13B either new inner surfaces of the

Ladder body created that enlarge the contact or adhesive surface to the molding (Figure 7, 13A, 13B) or it is a body main surface of the conductor body to increase the contact or adhesive surface suitably structured formed (Figure 6). With an enlargement of the respective side surface, a surface A of the side surface 21 may be larger than the thickness d of the conductor body 11 or 13 multiplied by one of the following quantities:

B, where B is one dimension, for example a maximum

Longitudinal dimension, about the length, the first body main surface 17 or the second body main surface 19 denotes, and / or

C, where C is half the circumference of the first or second

Body main surface called. Advantageously:

- A / (C * d)> 1.05, preferably>1.10,> 1.20 or> 1.30, more preferably ^ 1.40, for example ^ 1.50, 1.80, ^ 1 , 90 or> 2.00. In particular, in the case of two side surfaces 21 of different conductor bodies, which face each other, but for example staggered and / or different sizes, 0 denotes the area of the area in which the mutually facing side surfaces of the first and the second conductor body mutually

cover. 0 may be less than or equal to the area of the side surface of the first conductor body or less than or equal to the surface area of the side surface of the second

Be ladder body. Advantageously:

- 0 / (B * d)> 1.05, preferably> 1.10,> 1.20 or> 1.30, more preferably ^ 1.40, for example ^ 1.50, 1.80, ^ 1 , 90 or 2.00, and / or

Such ratios can be with the above

Measures, if necessary in combination, can be achieved.

In FIG. 12, the semiconductor body 23 from the preceding exemplary embodiments is shown in greater detail and, in addition, the connection between the semiconductor body 23 and the carrier 3 is explained in greater detail. The semiconductor body 23 is preferably epitaxially grown and may for example be based on II-VI or III-V semiconductor material. The semiconductor body 23 has a first semiconductor layer 35 and a second one

Semiconductor layer 37, wherein the second semiconductor layer 37 faces the carrier 3. Between the two

Semiconductor layers 37 and 35 is the active region of the semiconductor body 39 for generating radiation or for

Radiation reception arranged. Between the semiconductor body 23 and the carrier 3 is a, preferably electrically conductive, mirror layer 41

preferably arranged for radiation generated in the active region or to be received by the active region

is formed reflective. The mirror layer may, for example, contain or consist of a metal or a metallic material. The first semiconductor layer 35 may be p-type or n-type. The second

Semiconductor layer 37 preferably has the other conductivity type, ie is n-type or p-type. The first and / or second semiconductor layer may be doped for the respective type of line. The first conductor body 11 is electrically conductively connected to the first semiconductor layer 35. For this purpose, a plated-through hole is formed in the semiconductor body. The through-connection comprises a recess or recess 43 in the semiconductor body, which extends from the side facing the carrier to the side of the active region 39 facing away from the carrier. The recess 43 may be through the active area, the second

Semiconductor layer 37 and the mirror layer 41 extend. In the recess 43, a conductor material 45 is arranged, for example, a metal which is electrically conductively connected to the semiconductor body on the side facing away from the active region. The second conductor body 13 is preferably electrically conductively connected via the mirror layer 41 to the side of the semiconductor body 23 facing the carrier 3.

In the partial region of the recess 43 between the side of the semiconductor body 23 facing the carrier 3 and the active region 39, the conductor body 11 is expediently

electrically separated from the semiconductor body, as well as on the carrier side facing the semiconductor body. For this purpose, an insulating layer 47 is provided, which partially is provided between the carrier 3 and the semiconductor body. For the contact formation to the first semiconductor layer 35, the insulation layer is interrupted. Between the

respective conductor body 11 and 13 and the

Semiconductor body 23, preferably immediately adjacent in the respective conductor body 11 and 13, a seed layer 49 and 51 is arranged. The

Seed layers 59 and 51 may be part of a

be continuous seed layer in the manufacturing process continuously on the semiconductor body or the

Semiconductor layer sequence, from which a plurality of semiconductor bodies are formed, applied and subsequently patterned accordingly. Alternatively, the seed layers 49 and 51 can be applied already structured. The material of the shaped body 15 can, as shown, the respective

Ladder body 11 seen in the direction of the semiconductor body 23, project beyond. Optionally, the molded body 15 and the insulating layer, the mirror layer 41, the second

Semiconductor layer, the active region 39 and / or the first semiconductor layer 35 regions or completely

overtop. The respective seed layer 49 and 51 is preferably made electrically conductive. For example, the respective seed layer contains a metal that is for galvanic

Applying the conductor body is suitable. The side facing away from the carrier side of the semiconductor body, the

Forming the radiation exit side of the semiconductor chip 1. Via the mirror layer 41, radiation which is emitted from the active region in the direction of the carrier 3, in

Direction of the radiation exit surface are reflected back.

The shaped body and / or the respective conductor body is preferably radiopaque. Of the Shaped body can be absorbent, especially black,

be executed. Since the mirror layer is arranged between the carrier and the semiconductor body, this does not significantly affect the radiation power coupled out in the case of a radiation-emitting semiconductor chip.

The respective conductor body 11, 13 can in the

Examples of examples, tin, nickel, gold, tungsten, silver or copper or a plurality of these

Contain or consist of materials.

For example, one or more polymers or one or more ceramic materials are suitable for the shaped body 15. The polymeric materials may be epoxies, silicones, acrylates, polyethanes, polyterephthalates or polysilazanes. It is also possible that the polymer materials are filled with inorganic particles, such as scattering particles.

For example, the polymers are filled with particles of at least one of glass, TiO 2, SiO 2, ZnO, ZrO 2, BN, Si 3 N 4, Al 2 O 3 and AlN. The ceramic powders may be in the form of microparticles or nanoparticles, for example, loosely bound or bound in pastes or inks. For example, the ceramic powders have at least one of the materials ZnO, ZrO 2, BN, Si 3 N 4, Al 2 O 3 and AlN. For the production of

Insulation layer are also different silica or Silsesquioxane particularly suitable. Of the

Process for curing the printed layers can be done by sintering in the oven or by local sintering by laser or by UV irradiation.

This patent application claims the priority of German Patent Application 10 2015 114 579.0, the disclosure of which is hereby incorporated by reference. The invention is not limited by the description with reference to the embodiments. Rather, the includes

Invention every new feature as well as every combination of

Features, which includes in particular any combination of features in the claims, even if this feature or this combination itself is not explicitly in the

Claims or embodiments is given.

Reference sign list

1 semiconductor chip

3 carriers

5 first support surface

7 second support surface

9 side surface

11 first conductor body

13 second conductor body

15 moldings

17 first main body surface

19 second main body surface

21 side surface

23 semiconductor body

25 border area

27 intermediate area

29 Holding device

31 undercut

33 connection area

35 semiconductor layer

37 semiconductor layer

39 active area

41 mirror layer

43 recess

45 conductor material

47 insulation layer

49 germ layer

51 germ layer

53 end surface

F force

Claims

claims

1. Optoelectronic semiconductor chip (1) with a

A semiconductor body (23) having an active region (39) and a carrier (3) having a first one

Support surface (5) on which the semiconductor body

is arranged, and a second carrier surface (7) on the side facing away from the semiconductor body side, wherein the carrier has a composite body (11, 13, 15), the at least one electrically conductive conductor body (11, 13) and at least one electrically insulating

Shaped body (15), wherein the conductor body extends from the first support surface to the second support surface and is electrically conductively connected to the active region, and wherein the composite body is formed zugstabil.

2. Semiconductor chip according to claim 1,

in which the shaped body (15) is integrally formed on the conductor body (11, 13).

3. Semiconductor chip according to at least one of the preceding claims,

wherein the conductor body (11, 13) for increasing the

Contact surface between the conductor body and the

Shaped body (15) is formed.

4. Semiconductor chip according to at least one of the preceding claims,

in which one, any selected plurality or all of the following elements have a thickness which is less than or equal to 300 μιη: carrier (3), Composite body (11, 13, 15), conductor body (11, 13), molded body (15).

Semiconductor chip according to at least one of the preceding claims,

in which the conductor body (11, 13) has a first one

A body main surface (17) facing the semiconductor body (23) and a second body main surface (19) facing away from the first body main surface, the first and second body main surfaces being connected to each other via at least one side surface (21) of the conductor body ,

Semiconductor chip according to Claim 5

wherein the area of the first body main surface (17) is greater than the area of the second

Body main surface (19) or vice versa.

Semiconductor chip according to Claim 5 or 6

in which the conductor body (11, 13) seen in cross-section, starting from the first body main surface (17) in the direction of the second body main surface (19) tapers or increases.

A semiconductor chip according to any one of claims 5 to 7, wherein a main extension direction of the side surface (21) is oriented obliquely relative to the first support surface, the first body main surface, the second support surface and / or the second body main surface.

Semiconductor chip according to one of claims 5 to 8, wherein the side surface (21) one or more

Having undercuts (31).

10. Semiconductor chip according to one of claims 5 to 8, wherein the side surface (21) is formed without undercuts.

11. Semiconductor chip according to one of claims 5 to 10,

in which the side surface (21) with a

Surface structure is provided.

Semiconductor chip according to Claim 11,

in which the surface structure along the side surface

(21) seen on the way from the first

Body main surface (17) to the second main body surface

(19) is uniform.

Semiconductor chip according to Claim 11,

in which the surface structure along the

Side surface (21) seen on the way from the first body main surface (17) to the second body main surface (19) changes.

14. Semiconductor chip according to at least one of claims 5 to 13,

in which for a surface A of the side surface (21) of the conductor body (11, 13):

A / (B * d)> 1.20, and / or

A / (C * d)> 1.20, where

B is the maximum longitudinal dimension of the first

Body main surface (17) or the second

Denotes the main body surface (19) of the conductor body,

C half the circumference of the first or second

Denotes the main body surface of the conductor body, and d denotes the thickness of the conductor body. Semiconductor chip according to at least one of the preceding claims,

in which a portion of the shaped body (15) a

Connecting portion (33) which, seen in plan view of the first support surface (5), extends from one side of the conductor body (11, 13) over a region covered by the conductor body in the plan view to another side of the conductor body.

Semiconductor chip according to at least one of the preceding claims,

in which the conductor body (11, 13) has a plurality of partial regions which are electrically separated from one another within the carrier,

the subregions of the conductor body are respectively electrically conductively connected to the active region, and between two adjacent subregions of the

Ladder each one region of the shaped body (15) is arranged.

Semiconductor chip according to at least one of the preceding claims,

in which the conductor body is a first conductor body (11) and the composite body has a second conductor body (13), which is electrically conductively connected to the semiconductor body (23) on another side of the active region than the first conductor body.