WO2017033931A1 - Matériau conducteur et structure de connexion - Google Patents

Matériau conducteur et structure de connexion Download PDF

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Publication number
WO2017033931A1
WO2017033931A1 PCT/JP2016/074528 JP2016074528W WO2017033931A1 WO 2017033931 A1 WO2017033931 A1 WO 2017033931A1 JP 2016074528 W JP2016074528 W JP 2016074528W WO 2017033931 A1 WO2017033931 A1 WO 2017033931A1
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Prior art keywords
solder
conductive
electrode
particles
conductive particles
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PCT/JP2016/074528
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English (en)
Japanese (ja)
Inventor
将大 伊藤
周治郎 定永
石澤　英亮
敬士 久保田
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積水化学工業株式会社
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Application filed by 積水化学工業株式会社 filed Critical 積水化学工業株式会社
Priority to JP2016556046A priority Critical patent/JPWO2017033931A1/ja
Priority to CN201680032753.8A priority patent/CN107636772A/zh
Priority to KR1020177023798A priority patent/KR20180043192A/ko
Publication of WO2017033931A1 publication Critical patent/WO2017033931A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives

Definitions

  • the present invention relates to a conductive material including conductive particles having solder.
  • the present invention also relates to a connection structure using the conductive material.
  • Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
  • anisotropic conductive material conductive particles are dispersed in a binder.
  • the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
  • FOG Glass
  • COF Chip on Film
  • an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do.
  • a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
  • the following Patent Document 1 describes an anisotropic conductive material including conductive particles and a resin component that cannot be cured at the melting point of the conductive particles.
  • the conductive particles include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), cadmium (Cd ), Metals such as gallium (Ga) and thallium (Tl), and alloys of these metals.
  • Patent Document 1 a resin heating step for heating the anisotropic conductive resin to a temperature higher than the melting point of the conductive particles and at which the curing of the resin component is not completed, and a resin component curing step for curing the resin component The electrical connection between the electrodes is described.
  • Patent Document 1 describes that mounting is performed with the temperature profile shown in FIG. In Patent Document 1, the conductive particles melt in a resin component that is not completely cured at a temperature at which the anisotropic conductive resin is heated.
  • Patent Document 2 discloses an adhesive tape that includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent are present in the resin layer. Yes.
  • This adhesive tape is in the form of a film, not a paste.
  • the solder powder or conductive particles may not be efficiently arranged between the upper and lower electrodes (lines). Further, there are cases where a large amount of solder is disposed between the electrodes (spaces) adjacent in the lateral direction to which solder should not be connected.
  • the adhesive tape described in Patent Document 2 is a film, not a paste.
  • the adhesive tape having the composition as described in Patent Document 2 it is difficult to efficiently arrange the solder powder between the upper and lower electrodes (lines).
  • a part of the solder powder is easily disposed between the electrodes (spaces) adjacent in the lateral direction. Solder powder disposed in a region where no electrode is formed does not contribute to conduction between the electrodes.
  • the object of the present invention is to selectively arrange the solder in the conductive particles between the upper and lower electrodes, making it difficult for the solder in the conductive particles to be arranged between the lateral electrodes, and to improve the conduction reliability and the insulation reliability. It is to provide a conductive material that can be enhanced. Another object of the present invention is to provide a connection structure using the conductive material.
  • the outer surface portion of the conductive portion includes a plurality of conductive particles having solder and a thermosetting component, and the melting point of the solder in the conductive particles is 25 ° C. or lower.
  • the minimum value of the viscosity of the conductive material is 25 Pa ⁇ s or more and 255 Pa ⁇ s or less
  • the average particle diameter of the conductive particles is 3 ⁇ m or more and 15 ⁇ m or less
  • the average particle diameter ⁇ m of the conductive particles is A conductive material in which B is ( ⁇ 5A + 100) or more and ( ⁇ 15A + 300) or less, where A is B and the viscosity Pa ⁇ s of the conductive material at the melting point of the solder in the conductive particles is B Provided.
  • the absolute value of the difference between the minimum value and the maximum value of the viscosity of the conductive material at 25 ° C. or higher and the melting point of the solder in the conductive particles is 50 Pa ⁇ s to 200 Pa ⁇ s.
  • the average particle diameter of the conductive particles is 7 ⁇ m or more and 13 ⁇ m or less.
  • the conductive particles are solder particles.
  • the conductive material is liquid at 25 ° C. and is a conductive paste.
  • a first connection target member having at least one first electrode on the surface
  • a second connection target member having at least one second electrode on the surface
  • the connection part is a cured product of the conductive material described above, and the first electrode and the second electrode.
  • the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode.
  • the solder portion in the connection portion is arranged in 50% or more of the area of 100% of the portion where the first electrode and the second electrode face each other.
  • the conductive material according to the present invention includes a plurality of conductive particles having solder and a thermosetting component on the outer surface portion of the conductive part, and is 25 ° C. or higher and the melting point of the solder in the conductive particles or lower.
  • the minimum value of the viscosity of the conductive material is 25 Pa ⁇ s or more and 255 Pa ⁇ s or less, the average particle diameter of the conductive particles is 3 ⁇ m or more and 15 ⁇ m or less, and the average particle diameter ⁇ m of the conductive particles is A
  • the viscosity Pa ⁇ s of the conductive material at the melting point of the solder in the conductive particles is B
  • the B is ( ⁇ 5A + 100) or more and ( ⁇ 15A + 300) or less.
  • the solder in the conductive particles can be selectively disposed between the electrodes, the solder in the conductive particles is hardly disposed between the lateral electrodes, and the conduction reliability and the insulation reliability can be improved.
  • FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive material according to an embodiment of the present invention.
  • 2A to 2C are cross-sectional views for explaining each step of an example of a method for manufacturing a connection structure using a conductive material according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a modification of the connection structure.
  • FIG. 4 is a cross-sectional view showing a first example of conductive particles that can be used as a conductive material.
  • FIG. 5 is a cross-sectional view showing a second example of conductive particles that can be used for the conductive material.
  • FIG. 6 is a cross-sectional view showing a third example of conductive particles that can be used for the conductive material.
  • the conductive material according to the present invention includes a plurality of conductive particles and a binder.
  • the conductive particles have a conductive part.
  • the conductive particles have solder on the outer surface portion of the conductive portion.
  • Solder is contained in the conductive part and is a part or all of the conductive part.
  • the binder is a component excluding conductive particles contained in the conductive material.
  • the conductive material according to the present invention contains a thermosetting component as the binder.
  • the thermosetting component preferably contains a thermosetting compound and a thermosetting agent.
  • the minimum value ( ⁇ min) of the conductive material at 25 ° C. or higher and the melting point of the solder in the conductive particles is 25 Pa ⁇ s or higher and 255 Pa ⁇ s or lower.
  • the conductive particles have an average particle size of 3 ⁇ m or more and 15 ⁇ m or less.
  • A be the average particle diameter of the conductive particles.
  • B be the viscosity ( ⁇ mp) Pa ⁇ s of the conductive material at the melting point of the solder in the conductive particles.
  • the B is ( ⁇ 5A + 100) or more and ( ⁇ 15A + 300) or less.
  • the solder in the conductive particles can be selectively disposed between the upper and lower electrodes.
  • the solder in the conductive particles easily collects between the upper and lower electrodes, and the solder in the conductive particles can be efficiently disposed on the electrodes (lines).
  • the solder in the conductive particles it is difficult for a part of the solder in the conductive particles to be arranged in a region (space) where no electrode is formed, and the amount of solder arranged in a region where no electrode is formed can be considerably reduced.
  • the solder that is not located between the opposing electrodes can be efficiently moved between the opposing electrodes. Therefore, the conduction reliability between the electrodes can be improved.
  • the average particle diameter (A ( ⁇ m)) of the conductive particles is 3 ⁇ m or more and 15 ⁇ m or less. From the viewpoint of more efficiently arranging the solder on the electrode, the average particle diameter (A ( ⁇ m)) of the conductive particles is preferably 3 ⁇ m or more, more preferably 7 ⁇ m or more, and preferably 15 ⁇ m or less. Is 13 ⁇ m or less.
  • the “average particle size” of the conductive particles indicates a number average particle size.
  • the average particle diameter of the conductive particles is obtained, for example, by observing 50 arbitrary conductive particles with an electron microscope or an optical microscope and calculating an average value.
  • the minimum value ( ⁇ min) of the viscosity of the conductive material at 25 ° C. or higher and the melting point of the solder in the conductive particles is 25 Pa ⁇ s or higher and 255 Pa ⁇ s or lower. From the viewpoint of more efficiently arranging the solder on the electrode, the minimum value ( ⁇ min) of the viscosity is preferably 35 Pa ⁇ s or more, and preferably 195 Pa ⁇ s or less.
  • the B (Pa ⁇ s) is ( ⁇ 5A + 100) or more and ( ⁇ 15A + 300) or less. It can be understood from the examples and comparative examples described later that the effects of the present invention can be obtained within this range. From the viewpoint of more efficiently arranging the solder on the electrode, the B (Pa ⁇ s) is preferably 25 or more, and preferably 255 or less.
  • the difference between the minimum value ( ⁇ min) and the maximum value ( ⁇ man) of the viscosity of the conductive material at 25 ° C. or higher and the melting point of the solder in the conductive particles The absolute value of is preferably 50 Pa ⁇ s or more, more preferably 80 Pa ⁇ s or more, preferably 200 Pa ⁇ s or less, more preferably 150 Pa ⁇ s or less.
  • the above viscosity is STRESSTECH (manufactured by EOLOGICA), etc., strain control 1 rad, frequency 1 Hz, temperature rising rate 20 ° C./min, and measurement temperature range 25 to 200 ° C.
  • the upper limit of the temperature is the melting point of the solder).
  • the melting point of the solder may be 200 ° C. or less.
  • the conductive material is preferably liquid at 25 ° C., and preferably a conductive paste.
  • the conductive material according to the present invention is suitably used for connection between electrodes having a small electrode width and interelectrode width.
  • the electrode width and the interelectrode width are each preferably 20 ⁇ m or more, more preferably 40 ⁇ m or more, preferably 500 ⁇ m or less, more preferably 400 ⁇ m or less.
  • the electrode width is the width of the line (L) in L / S.
  • the inter-electrode width is the width of the space (S) in L / S.
  • the conductive material can be used as a conductive paste and a conductive film.
  • the conductive material is preferably an anisotropic conductive material.
  • the conductive paste is preferably an anisotropic conductive paste.
  • the conductive film is preferably an anisotropic conductive film.
  • the conductive material is preferably used for electrical connection of electrodes.
  • the conductive material is preferably a circuit connection material.
  • the conductive particles electrically connect the electrodes of the connection target member.
  • the conductive particles have solder on the outer surface portion of the conductive portion.
  • the conductive particles may be solder particles.
  • the solder particles are formed of solder.
  • the solder particles have solder on the outer surface portion of the conductive portion.
  • the solder particles are particles in which both the central portion of the solder particles and the outer surface portion of the conductive portion are solder.
  • both the center part and the outer surface part of an electroconductive part are formed with the solder.
  • the said electroconductive particle may have a base material particle and the electroconductive part arrange
  • the conductive particles are less likely to collect on the surface, and the solder joint property between the conductive particles is low, so the conductive particles that have moved onto the electrodes tend to move out of the electrodes, and the effect of suppressing displacement between the electrodes Tend to be lower. Therefore, the conductive particles are preferably solder particles.
  • a carboxyl group or an amino group is present on the outer surface of the conductive particles (the outer surface of the solder). It is preferable that a carboxyl group is present, and an amino group is preferably present.
  • a group containing a carboxyl group or an amino group is shared on the outer surface of the conductive particle (the outer surface of the solder) via a Si—O bond, an ether bond, an ester bond or a group represented by the following formula (X).
  • a group containing a carboxyl group or an amino group is covalently bonded through an ether bond, an ester bond or a group represented by the following formula (X).
  • the group containing a carboxyl group or an amino group may contain both a carboxyl group and an amino group.
  • the right end and the left end represent a binding site.
  • the bond form between the solder surface and the group containing a carboxyl group may not include a coordinate bond, and may not include a bond due to a chelate coordinate.
  • the conductive particle is a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group or an amino group ( Hereinafter, it is preferably obtained by reacting a hydroxyl group on the surface of the solder with a functional group capable of reacting with the hydroxyl group using a compound X). In the above reaction, a covalent bond is formed.
  • conductive particles in which a group containing a carboxyl group or an amino group is covalently bonded to the surface of the solder are easily obtained. It is also possible to obtain conductive particles in which a group containing a carboxyl group or an amino group is covalently bonded to the surface of the solder via an ether bond or an ester bond.
  • the compound X can be chemically bonded to the surface of the solder in the form of a covalent bond.
  • Examples of the functional group capable of reacting with the hydroxyl group include a hydroxyl group, a carboxyl group, an ester group, and a carbonyl group.
  • a hydroxyl group or a carboxyl group is preferred.
  • the functional group capable of reacting with the hydroxyl group may be a hydroxyl group or a carboxyl group.
  • Examples of the compound having a functional group capable of reacting with a hydroxyl group include levulinic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4- Aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, decanoic acid, dodecanoic acid, tetradecanoic acid, pentadecanoic acid, Hexadecanoic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, vaccenic acid, linoleic acid, (9,12,15) -linolenic acid, nonadecanoic
  • Glutaric acid or glycolic acid is preferred. Only 1 type may be used for the compound which has the functional group which can react with the said hydroxyl group, and 2 or more types may be used together.
  • the compound having a functional group capable of reacting with the hydroxyl group is preferably a compound having at least one carboxyl group.
  • the compound X preferably has a flux action, and the compound X preferably has a flux action in a state of being bonded to the solder surface.
  • the compound having a flux action can remove the oxide film on the surface of the solder and the oxide film on the surface of the electrode.
  • the carboxyl group has a flux action.
  • Examples of the compound having a flux action include levulinic acid, glutaric acid, glycolic acid, succinic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3- Examples include methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid and 4-phenylbutyric acid. Glutaric acid or glycolic acid is preferred. As for the compound which has the said flux effect
  • the functional group capable of reacting with the hydroxyl group in the compound X is preferably a hydroxyl group or a carboxyl group.
  • the functional group capable of reacting with the hydroxyl group in the compound X may be a hydroxyl group or a carboxyl group.
  • the compound X preferably has at least two carboxyl groups.
  • the method for producing conductive particles includes, for example, using conductive particles and mixing the conductive particles, a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group, a catalyst, and a solvent.
  • conductive particles in which a group containing a carboxyl group is covalently bonded to the surface of the solder can be easily obtained by the mixing step.
  • this electroconductive particle using electroconductive particle, this electroconductive particle, the compound which has the functional group and carboxyl group which can react with the said hydroxyl group, the said catalyst, and the said solvent are mixed, and it heats. It is preferable.
  • conductive particles in which a group containing a carboxyl group is covalently bonded to the surface of the solder can be obtained more easily.
  • the solvent examples include alcohol solvents such as methanol, ethanol, propanol and butanol, acetone, methyl ethyl ketone, ethyl acetate, toluene and xylene.
  • the solvent is preferably an organic solvent, and more preferably toluene. As for the said solvent, only 1 type may be used and 2 or more types may be used together.
  • the catalyst examples include p-toluenesulfonic acid, benzenesulfonic acid, 10-camphorsulfonic acid, and the like.
  • the catalyst is preferably p-toluenesulfonic acid.
  • the said catalyst only 1 type may be used and 2 or more types may be used together.
  • the heating temperature is preferably 90 ° C or higher, more preferably 100 ° C or higher, preferably 130 ° C or lower, more preferably 110 ° C or lower.
  • the conductive particles react with the isocyanate compound to the hydroxyl group on the surface of the solder using the isocyanate compound. It is preferable that it is obtained through the process of making it. In the above reaction, a covalent bond is formed.
  • the hydroxyl group on the surface of the solder with the isocyanate compound it is possible to easily obtain conductive particles in which the nitrogen atom of the group derived from the isocyanate group is covalently bonded to the surface of the solder.
  • a group derived from an isocyanate group can be chemically bonded to the surface of the solder in the form of a covalent bond.
  • a silane coupling agent can be easily reacted with a group derived from an isocyanate group. Since the conductive particles can be easily obtained, the group containing a carboxyl group is introduced by a reaction using a silane coupling agent having a carboxyl group, or the reaction using a silane coupling agent is performed. It is preferably introduced later by reacting a compound derived from a silane coupling agent with a compound having at least one carboxyl group.
  • the conductive particles are preferably obtained by reacting the isocyanate compound with a hydroxyl group on the surface of the solder using the isocyanate compound and then reacting a compound having at least one carboxyl group.
  • the compound having at least one carboxyl group preferably has a plurality of carboxyl groups.
  • isocyanate compound examples include diphenylmethane-4,4'-diisocyanate (MDI), hexamethylene diisocyanate (HDI), toluene diisocyanate (TDI), and isophorone diisocyanate (IPDI). Isocyanate compounds other than these may be used. After reacting this compound on the surface of the solder, by reacting the residual isocyanate group and a compound having reactivity with the residual isocyanate group and having a carboxyl group, the surface of the solder is represented by the above formula (X). A carboxyl group can be introduced through the group represented.
  • MDI diphenylmethane-4,4'-diisocyanate
  • HDI hexamethylene diisocyanate
  • TDI toluene diisocyanate
  • IPDI isophorone diisocyanate
  • the isocyanate compound a compound having an unsaturated double bond and having an isocyanate group may be used. Examples include 2-acryloyloxyethyl isocyanate and 2-isocyanatoethyl methacrylate. After reacting the isocyanate group of this compound on the surface of the solder, reacting the compound having a functional group having reactivity with the remaining unsaturated double bond and having a carboxyl group, A carboxyl group can be introduced to the surface via a group represented by the above formula (X).
  • silane coupling agent examples include 3-isocyanatopropyltriethoxysilane (“KBE-9007” manufactured by Shin-Etsu Silicone) and 3-isocyanatepropyltrimethoxysilane (“Y-5187” manufactured by MOMENTIVE). As for the said silane coupling agent, only 1 type may be used and 2 or more types may be used together.
  • Examples of the compound having at least one carboxyl group include levulinic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-amino Butyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, decanoic acid, dodecanoic acid, tetradecanoic acid, pentadecanoic acid, hexadecane Examples include acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, vaccenic acid, linoleic acid, (9,12,15) -linolenic acid, nonadecanoic acid, arachidic acid
  • the carboxyl group of the compound having a plurality of carboxyl groups is reacted with the hydroxyl group on the surface of the solder.
  • the group containing can be left.
  • the conductive particles are used and the isocyanate compound is used to react the hydroxyl group on the surface of the solder with the isocyanate compound, and then the compound having at least one carboxyl group is reacted.
  • the conductive particles in which a group containing a carboxyl group is bonded to the surface of the solder via the group represented by the above formula (X) are obtained.
  • conductive particles in which a group containing a carboxyl group is introduced on the surface of the solder can be easily obtained by the above-described steps.
  • the following method can be given as a specific method for producing the conductive particles.
  • Conductive particles are dispersed in an organic solvent, and a silane coupling agent having an isocyanate group is added. Thereafter, a silane coupling agent is covalently bonded to the surface of the solder using a reaction catalyst between a hydroxyl group and an isocyanate group on the surface of the solder of the conductive particles.
  • a hydroxyl group is produced
  • Conductive particles are dispersed in an organic solvent, and a compound having an isocyanate group and an unsaturated double bond is added. Thereafter, a covalent bond is formed using a reaction catalyst of a hydroxyl group and an isocyanate group on the surface of the solder of the conductive particles. Thereafter, the unsaturated double bond introduced is reacted with a compound having an unsaturated double bond and a carboxyl group.
  • the reaction catalyst for hydroxyl groups and isocyanate groups on the surface of the solder of the conductive particles includes tin catalysts (dibutyltin dilaurate, etc.), amine catalysts (triethylenediamine, etc.), carboxylate catalysts (lead naphthenate, potassium acetate, etc.) And a trialkylphosphine catalyst (such as triethylphosphine).
  • the compound having at least one carboxyl group is a compound represented by the following formula (1): Is preferred.
  • the compound represented by the following formula (1) has a flux action.
  • the compound represented by following formula (1) has a flux effect
  • X represents a functional group capable of reacting with a hydroxyl group
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • the organic group may contain a carbon atom, a hydrogen atom, and an oxygen atom.
  • the organic group may be a divalent hydrocarbon group having 1 to 5 carbon atoms.
  • the main chain of the organic group is preferably a divalent hydrocarbon group.
  • a carboxyl group or a hydroxyl group may be bonded to a divalent hydrocarbon group.
  • Examples of the compound represented by the above formula (1) include citric acid.
  • the compound having at least one carboxyl group is preferably a compound represented by the following formula (1A) or the following formula (1B).
  • the compound having at least one carboxyl group is preferably a compound represented by the following formula (1A), and more preferably a compound represented by the following formula (1B).
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • R in the above formula (1A) is the same as R in the above formula (1).
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • R in the above formula (1B) is the same as R in the above formula (1).
  • a group represented by the following formula (2A) or the following formula (2B) is bonded to the surface of the solder.
  • a group represented by the following formula (2A) is preferably bonded to the surface of the solder, and more preferably a group represented by the following formula (2B) is bonded.
  • the left end portion represents a binding site.
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • R in the above formula (2A) is the same as R in the above formula (1).
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • R in the above formula (2B) is the same as R in the above formula (1).
  • the molecular weight of the compound having at least one carboxyl group is preferably 10,000 or less, more preferably 1000 or less, and even more preferably 500 or less.
  • the molecular weight means a molecular weight that can be calculated from the structural formula when the compound having at least one carboxyl group is not a polymer and when the structural formula of the compound having at least one carboxyl group can be specified. Further, when the compound having at least one carboxyl group is a polymer, it means a weight average molecular weight.
  • the conductive particles may have a conductive particle main body and an anionic polymer disposed on the surface of the conductive particle main body.
  • the conductive particles are preferably obtained by surface-treating the conductive particle body with an anionic polymer or a compound that becomes an anionic polymer.
  • the conductive particles are preferably a surface treated product of an anionic polymer or a compound that becomes an anionic polymer.
  • the anion polymer and the compound used as the said anion polymer only 1 type may respectively be used and 2 or more types may be used together.
  • the anionic polymer is a polymer having an acidic group.
  • an anionic polymer for example, a (meth) acrylic polymer copolymerized with (meth) acrylic acid, synthesized from a dicarboxylic acid and a diol, and having carboxyl groups at both ends are used.
  • Polyester polymer having a carboxyl group at both ends obtained from an intermolecular dehydration condensation reaction of dicarboxylic acid, a polyester polymer synthesized from dicarboxylic acid and diamine and having a carboxyl group at both ends, and a modification having a carboxyl group
  • a method of reacting the carboxyl group of the anionic polymer with the hydroxyl group on the surface of the conductive particle main body using Poval (“GOHSEX T” manufactured by Nippon Synthetic Chemical Co., Ltd.) or the like can be mentioned.
  • anion portion of the anionic polymer examples include the carboxyl group, and other than that, a tosyl group (p—H 3 CC 6 H 4 S ( ⁇ O) 2 —), a sulfonate ion group (—SO 3 —) ), And phosphate ion groups (—PO 4 ⁇ ) and the like.
  • a compound having a functional group that reacts with a hydroxyl group on the surface of the conductive particle main body and a functional group that can be polymerized by addition or condensation reaction is used as another method for the surface treatment.
  • the method of polymerizing on the surface of an electroconductive particle main body is mentioned.
  • the functional group that reacts with the hydroxyl group on the surface of the conductive particle body include a carboxyl group and an isocyanate group, and the functional group that polymerizes by addition and condensation reactions includes a hydroxyl group, a carboxyl group, an amino group, and (meta ) An acryloyl group is mentioned.
  • the weight average molecular weight of the anionic polymer is preferably 2000 or more, more preferably 3000 or more, preferably 10,000 or less, more preferably 8000 or less.
  • the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, a sufficient amount of charge and flux properties can be introduced on the surface of the conductive particles. Thereby, the cohesiveness of electroconductive particle can be effectively improved at the time of conductive connection, and the oxide film on the surface of an electrode can be effectively removed at the time of connection of the connection object member.
  • the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, it is easy to dispose an anionic polymer on the surface of the conductive particle body, and it is possible to effectively increase the cohesiveness of the solder particles at the time of conductive connection.
  • the conductive particles can be arranged more efficiently on the electrode.
  • the weight average molecular weight indicates a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).
  • the weight average molecular weight of the anionic polymer is measured by dissolving the solder in the conductive particles, removing the conductive particles with dilute hydrochloric acid that does not cause decomposition of the anionic polymer, and then measuring the weight average molecular weight of the remaining anionic polymer. Can be obtained.
  • the acid value per 1 g of the conductive particles is preferably 1 mgKOH or more, more preferably 2 mgKOH or more, preferably 10 mgKOH or less, more preferably 6 mgKOH or less.
  • the acid value can be measured as follows. 1 g of conductive particles is added to 36 g of acetone and dispersed with an ultrasonic wave for 1 minute. Thereafter, phenolphthalein is used as an indicator and titrated with a 0.1 mol / L potassium hydroxide ethanol solution.
  • FIG. 4 is a cross-sectional view showing a first example of conductive particles that can be used as a conductive material.
  • the conductive particles 21 shown in FIG. 4 are solder particles.
  • the conductive particles 21 are entirely formed of solder.
  • the conductive particles 21 do not have base particles in the core, and are not core-shell particles.
  • both the center part and the outer surface part of an electroconductive part are formed with the solder.
  • FIG. 5 is a cross-sectional view showing a second example of conductive particles that can be used as a conductive material.
  • the electroconductive particle 31 shown in FIG. 5 is equipped with the base material particle 32 and the electroconductive part 33 arrange
  • the conductive portion 33 covers the surface of the base particle 32.
  • the conductive particles 31 are coated particles in which the surface of the base particle 32 is covered with the conductive portion 33.
  • the conductive portion 33 has a second conductive portion 33A and a solder portion 33B (first conductive portion).
  • the conductive particle 31 includes a second conductive portion 33A between the base particle 32 and the solder portion 33B. Therefore, the conductive particles 31 are composed of the base particle 32, the second conductive portion 33A disposed on the surface of the base particle 32, and the solder portion 33B disposed on the outer surface of the second conductive portion 33A.
  • FIG. 6 is a cross-sectional view showing a third example of conductive particles that can be used as a conductive material.
  • the conductive portion 33 in the conductive particle 31 has a two-layer structure.
  • the conductive particle 41 shown in FIG. 6 has a solder part 42 as a single-layer conductive part.
  • the conductive particles 41 include base particles 32 and solder portions 42 disposed on the surfaces of the base particles 32.
  • the substrate particles include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles.
  • the substrate particles are preferably substrate particles excluding metal, and are preferably resin particles, inorganic particles excluding metal particles, or organic-inorganic hybrid particles.
  • the substrate particles may be copper particles.
  • the base particle may have a core and a shell disposed on the surface of the core, or may be a core-shell particle.
  • the core may be an organic core, and the shell may be an inorganic shell.
  • the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; polycarbonate , Polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polysulfone, polyphenylene oxide , Polyacetal, polyimide, polyamideimide, polyether ether Tons, polyether sulfone, divinyl benzene polymer, and divinylbenzene copolymer,
  • polyolefin resins such as polyethylene, polypropylene,
  • the divinylbenzene copolymer examples include divinylbenzene-styrene copolymer and divinylbenzene- (meth) acrylic acid ester copolymer. Since the hardness of the resin particles can be easily controlled within a suitable range, the resin for forming the resin particles is a polymer obtained by polymerizing one or more polymerizable monomers having an ethylenically unsaturated group. It is preferably a coalescence.
  • the polymerizable monomer having an ethylenically unsaturated group includes a non-crosslinkable monomer and And a crosslinkable monomer.
  • non-crosslinkable monomer examples include styrene monomers such as styrene and ⁇ -methylstyrene; carboxyl group-containing monomers such as (meth) acrylic acid, maleic acid, and maleic anhydride; (Meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl ( Alkyl (meth) acrylate compounds such as meth) acrylate and isobornyl (meth) acrylate; 2-hydroxyethyl (meth) acrylate, glycerol (meth) acrylate, polyoxyethylene (meth) acrylate, glycidyl (meth) acrylate, etc.
  • Oxygen atom-containing (meth) acrylate compounds Nitrile-containing monomers such as (meth) acrylonitrile; Vinyl ether compounds such as methyl vinyl ether, ethyl vinyl ether, and propyl vinyl ether; Acids such as vinyl acetate, vinyl butyrate, vinyl laurate, and vinyl stearate Vinyl ester compounds; unsaturated hydrocarbons such as ethylene, propylene, isoprene, and butadiene; halogen-containing monomers such as trifluoromethyl (meth) acrylate, pentafluoroethyl (meth) acrylate, vinyl chloride, vinyl fluoride, and chlorostyrene Etc.
  • Nitrile-containing monomers such as (meth) acrylonitrile
  • Vinyl ether compounds such as methyl vinyl ether, ethyl vinyl ether, and propyl vinyl ether
  • Acids such as vinyl acetate, vinyl butyrate, vinyl laurate, and vinyl stea
  • crosslinkable monomer examples include tetramethylolmethane tetra (meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, and dipenta Erythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri (meth) acrylate, glycerol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) Polyfunctional (meth) acrylate compounds such as acrylate, (poly) tetramethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate; triallyl (iso) sia Silane-
  • the resin particles can be obtained by polymerizing the polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of this method include a method of suspension polymerization in the presence of a radical polymerization initiator, and a method of polymerizing by swelling a monomer together with a radical polymerization initiator using non-crosslinked seed particles.
  • examples of inorganic substances for forming the substrate particles include silica, alumina, barium titanate, zirconia, and carbon black.
  • the inorganic substance is preferably not a metal.
  • the particles formed from the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary. The particle
  • examples of the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
  • the substrate particles are metal particles
  • examples of the metal for forming the metal particles include silver, copper, nickel, silicon, gold, and titanium.
  • the metal particles are preferably copper particles.
  • the substrate particles are preferably not metal particles.
  • the method for forming the conductive part on the surface of the base particle and the method for forming the solder part on the surface of the base particle or the surface of the second conductive part are not particularly limited.
  • Examples of the method for forming the conductive portion and the solder portion include a method by electroless plating, a method by electroplating, a method by physical collision, a method by mechanochemical reaction, a method by physical vapor deposition or physical adsorption, And a method of coating the surface of the substrate particles with a paste containing metal powder or metal powder and a binder. Electroless plating, electroplating or physical collision methods are preferred.
  • Examples of the method by physical vapor deposition include methods such as vacuum vapor deposition, ion plating, and ion sputtering. Further, in the method based on the physical collision, for example, a sheeter composer (manufactured by Tokuju Kogakusha Co., Ltd.) or the like is used.
  • the melting point of the base material particles is preferably higher than the melting points of the conductive part and the solder part.
  • the melting point of the substrate particles is preferably higher than 160 ° C, more preferably higher than 300 ° C, still more preferably higher than 400 ° C, and particularly preferably higher than 450 ° C.
  • the melting point of the substrate particles may be less than 400 ° C.
  • the melting point of the substrate particles may be 160 ° C. or less.
  • the softening point of the substrate particles is preferably 260 ° C. or higher.
  • the softening point of the substrate particles may be less than 260 ° C.
  • the conductive particles may have a single layer solder portion.
  • the conductive particles may have a plurality of layers of conductive parts (solder part, second conductive part). That is, in the conductive particles, two or more conductive portions may be stacked. When the conductive part has two or more layers, the conductive particles preferably have solder on the outer surface portion of the conductive part.
  • the solder is preferably a metal (low melting point metal) having a melting point of 450 ° C. or lower.
  • the solder part is preferably a metal layer (low melting point metal layer) having a melting point of 450 ° C. or lower.
  • the low melting point metal layer is a layer containing a low melting point metal.
  • the solder in the conductive particles is preferably metal particles having a melting point of 450 ° C. or lower (low melting point metal particles).
  • the low melting point metal particles are particles containing a low melting point metal.
  • the low melting point metal is a metal having a melting point of 450 ° C. or lower.
  • the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower.
  • the solder in the conductive particles preferably contains tin.
  • the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, and still more preferably. It is 70% by weight or more, particularly preferably 90% by weight or more.
  • the tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
  • ICP-AES high-frequency inductively coupled plasma emission spectrometer
  • EDX-800HS fluorescent X-ray analyzer
  • the solder is melted and joined to the electrodes, and the solder conducts between the electrodes. For example, since the solder and the electrode are not in point contact but in surface contact, the connection resistance is lowered.
  • the use of conductive particles having solder on the outer surface of the conductive portion increases the bonding strength between the solder and the electrode, and as a result, the solder and the electrode are more unlikely to peel off, and the conduction reliability is effective. To be high.
  • the low melting point metal constituting the solder part and the solder particles is not particularly limited.
  • the low melting point metal is preferably tin or an alloy containing tin.
  • the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
  • the low melting point metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, or tin-indium alloy because of its excellent wettability to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
  • the material constituting the solder is preferably a filler material having a liquidus of 450 ° C. or lower based on JIS Z3001: Welding terms.
  • the composition of the solder include a metal composition containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like.
  • the solder in the conductive particles is nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese. Further, it may contain a metal such as chromium, molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder and the electrode, the solder in the conductive particles preferably contains nickel, copper, antimony, aluminum, or zinc.
  • the content of these metals for increasing the bonding strength is preferably 0% in 100% by weight of the solder in the conductive particles. 0.0001% by weight or more, preferably 1% by weight or less.
  • the melting point of the second conductive part is preferably higher than the melting point of the solder part.
  • the melting point of the second conductive part is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, still more preferably more than 450 ° C, particularly preferably more than 500 ° C, most preferably Preferably it exceeds 600 degreeC. Since the solder part has a low melting point, it melts during conductive connection. It is preferable that the second conductive portion does not melt during conductive connection.
  • the conductive particles are preferably used by melting solder, preferably used by melting the solder part, and used without melting the solder part and melting the second conductive part. It is preferred that Since the melting point of the second conductive part is higher than the melting point of the solder part, only the solder part can be melted without melting the second conductive part at the time of conductive connection.
  • the absolute value of the difference between the melting point of the solder part and the melting point of the second conductive part exceeds 0 ° C, preferably 5 ° C or more, more preferably 10 ° C or more, still more preferably 30 ° C or more, and particularly preferably 50 ° C. or higher, most preferably 100 ° C. or higher.
  • the second conductive part preferably contains a metal.
  • the metal which comprises the said 2nd electroconductive part is not specifically limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and alloys thereof. Further, tin-doped indium oxide (ITO) may be used as the metal. As for the said metal, only 1 type may be used and 2 or more types may be used together.
  • the second conductive part is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or a gold layer, and even more preferably a copper layer.
  • the conductive particles preferably have a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably have a nickel layer or a gold layer, and still more preferably have a copper layer.
  • the thickness of the solder part is preferably 0.005 ⁇ m or more, more preferably 0.01 ⁇ m or more, preferably 10 ⁇ m or less, more preferably 1 ⁇ m or less, and still more preferably 0.3 ⁇ m or less.
  • the thickness of the solder portion is not less than the above lower limit and not more than the above upper limit, sufficient conductivity is obtained, and the conductive particles are not hardened, and the conductive particles are sufficiently deformed when connecting between the electrodes. .
  • the shape of the conductive particles is not particularly limited.
  • the conductive particles may have a spherical shape or a shape other than a spherical shape such as a flat shape.
  • the content of the conductive particles in 100% by weight of the conductive material is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, most preferably. It is 30% by weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.
  • the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be arranged more efficiently on the electrodes, and more solder in the conductive particles is arranged between the electrodes. It is easy to do and the conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, the content of the conductive particles is preferably large.
  • thermosetting compound is a compound that can be cured by heating.
  • examples of the thermosetting compound include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
  • an epoxy compound or an episulfide compound is preferable, and an epoxy compound is more preferable.
  • the conductive material preferably contains an epoxy compound.
  • the said thermosetting compound only 1 type may be used and 2 or more types may be used together.
  • the thermosetting compound preferably includes a thermosetting compound having a nitrogen atom, and a thermosetting compound having a triazine skeleton is used. It is preferable to include.
  • thermosetting compound having a nitrogen atom examples include triazine triglycidyl ether, and the like.
  • TEPIC series (TEPIC-G, TEPIC-S, TEPIC-SS, TEPIC-HP, TEPIC-L, TEPIC-, manufactured by Nissan Chemical Industries, Ltd.) PAS, TEPIC-VL, TEPIC-UC) and the like.
  • the above-mentioned epoxy compound includes an aromatic epoxy compound. Crystalline epoxy compounds such as resorcinol type epoxy compounds, naphthalene type epoxy compounds, biphenyl type epoxy compounds, and benzophenone type epoxy compounds are preferred.
  • An epoxy compound that is solid at normal temperature (23 ° C.) and has a melting temperature equal to or lower than the melting point of the solder is preferable. The melting temperature is preferably 100 ° C. or lower, more preferably 80 ° C. or lower, and preferably 40 ° C. or higher.
  • the content of the thermosetting compound in 100% by weight of the conductive material is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less. More preferably, it is 98 weight% or less, More preferably, it is 90 weight% or less, Most preferably, it is 80 weight% or less.
  • the content of the thermosetting compound is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrodes, and the displacement between the electrodes can be further suppressed, The conduction reliability can be further improved. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting compound is large.
  • the content of the epoxy compound in 100% by weight of the conductive material is preferably 10% by weight or more, more preferably 15%. % By weight or more, preferably 50% by weight or less, more preferably 30% by weight or less.
  • thermosetting agent thermosets the thermosetting compound.
  • examples of the thermosetting agent include an imidazole curing agent, a phenol curing agent, a thiol curing agent, an amine curing agent, an acid anhydride curing agent, a thermal cation initiator (thermal cation curing agent), and a thermal radical generator.
  • the said thermosetting agent only 1 type may be used and 2 or more types may be used together.
  • the imidazole curing agent is not particularly limited, and 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s- Examples include triazine isocyanuric acid adducts.
  • the thiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis-3-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate. .
  • the solubility parameter of the thiol curing agent is preferably 9.5 or more, and preferably 12 or less.
  • the solubility parameter is calculated by the Fedors method.
  • the solubility parameter of trimethylolpropane tris-3-mercaptopropionate is 9.6, and the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11.4.
  • the amine curing agent is not particularly limited, and hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5].
  • examples include undecane, bis (4-aminocyclohexyl) methane, metaphenylenediamine, and diaminodiphenylsulfone.
  • thermal cation initiator examples include iodonium cation curing agents, oxonium cation curing agents, and sulfonium cation curing agents.
  • examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate.
  • examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate.
  • sulfonium-based cationic curing agent examples include tri-p-tolylsulfonium hexafluorophosphate.
  • the thermal radical generator is not particularly limited, and examples thereof include azo compounds and organic peroxides.
  • examples of the azo compound include azobisisobutyronitrile (AIBN).
  • examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
  • the reaction initiation temperature of the thermosetting agent is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, preferably 250 ° C. or lower, more preferably 200 ° C. or lower, still more preferably 150 ° C. Hereinafter, it is particularly preferably 140 ° C. or lower.
  • the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder is more efficiently arranged on the electrode.
  • the reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
  • the reaction initiation temperature of the thermosetting agent is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, More preferably, it is 10 ° C. or higher.
  • the reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
  • the content of the thermosetting agent is not particularly limited.
  • the content of the thermosetting agent with respect to 100 parts by weight of the thermosetting compound is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, more preferably 100 parts by weight or less, more preferably 75 parts by weight or less.
  • the content of the thermosetting agent is not less than the above lower limit, it is easy to sufficiently cure the conductive material.
  • the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
  • the conductive material preferably contains a flux. By using flux, the solder can be more effectively placed on the electrode.
  • the flux is not particularly limited. As the flux, a flux generally used for soldering or the like can be used.
  • the conductive material may not contain flux.
  • Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin. Etc. As for the said flux, only 1 type may be used and 2 or more types may be used together.
  • Examples of the molten salt include ammonium chloride.
  • Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid.
  • Examples of the pine resin include activated pine resin and non-activated pine resin.
  • the flux is preferably an organic acid or pine resin having two or more carboxyl groups.
  • the flux may be an organic acid having two or more carboxyl groups, or pine resin. By using an organic acid having two or more carboxyl groups, pine resin, the conduction reliability between the electrodes is further enhanced.
  • the above rosins are rosins whose main component is abietic acid.
  • the flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
  • the active temperature (melting point) of the flux is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, preferably 200 ° C. or lower, more preferably 190 ° C. or lower, even more preferably 160. ° C or lower, more preferably 150 ° C or lower, still more preferably 140 ° C or lower.
  • the active temperature (melting point) of the flux is preferably 80 ° C. or higher and 190 ° C. or lower.
  • the activation temperature (melting point) of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
  • the flux having an active temperature (melting point) of 80 ° C. or higher and 190 ° C. or lower includes succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point) 104 ° C.), dicarboxylic acids such as suberic acid (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), malic acid (melting point 130 ° C.) and the like.
  • the boiling point of the flux is preferably 200 ° C. or lower.
  • the melting point of the flux is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, and more preferably 10 ° C or higher. More preferably.
  • the melting point of the flux is preferably higher than the reaction start temperature of the thermosetting agent, more preferably 5 ° C or higher, more preferably 10 ° C or higher. More preferably.
  • the flux may be dispersed in the conductive material or may be adhered on the surface of the conductive particles.
  • the solder can be efficiently aggregated on the electrode portion. This is because, when heat is applied at the time of joining, when the electrode formed on the connection target member is compared with the portion of the connection target member around the electrode, the thermal conductivity of the electrode portion is that of the connection target member portion around the electrode. Due to the fact that it is higher than the thermal conductivity, the temperature rise of the electrode portion is fast. At the stage where the melting point of the solder in the conductive particles is exceeded, the solder in the conductive particles dissolves, but the oxide film formed on the surface does not reach the melting point (activation temperature) of the flux and is not removed.
  • the flux is preferably a flux that releases cations by heating.
  • a flux that releases cations upon heating the solder can be placed more efficiently on the electrode.
  • thermal cation initiator is an example of the flux that releases cations by heating.
  • the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less.
  • the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
  • the conductive material may be, for example, a filler, an extender, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant as necessary.
  • various additives such as an antistatic agent and a flame retardant may be included.
  • connection structure includes a first connection target member having at least one first electrode on the surface, a second connection target member having at least one second electrode on the surface, and the first The connection object member and the connection part which has connected the said 2nd connection object member are provided.
  • the material of the connection part is the conductive material described above, and the connection part is a cured product of the conductive material described above.
  • the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.
  • the method for manufacturing the connection structure includes the step of disposing the conductive material on the surface of the first connection target member having at least one first electrode on the surface, using the conductive material described above, A second connection target member having at least one second electrode on the surface opposite to the first connection target member side of the material, the first electrode and the second electrode A step of arranging the first connection target member and the second connection target member by connecting the first connection target member and the second connection target member by heating the conductive material to a temperature equal to or higher than the melting point of the solder in the conductive particles. Forming a portion with the conductive material, and electrically connecting the first electrode and the second electrode with a solder portion in the connection portion.
  • the conductive material is heated above the curing temperature of the thermosetting component and the thermosetting compound.
  • connection structure since a specific conductive material is used, solder in a plurality of conductive particles easily collects between the first electrode and the second electrode.
  • the solder can be efficiently arranged on the electrode (line).
  • a part of the solder is difficult to be disposed in a region (space) where no electrode is formed, and the amount of solder disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved.
  • a conductive paste is used instead of a conductive film. It is preferable to use it.
  • the thickness of the solder part between the electrodes is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less.
  • the solder wetted area on the surface of the electrode is preferably 50% or more, more preferably 60% or more, still more preferably 70% or more, preferably Is 100% or less.
  • connection target member in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the second connection is applied to the conductive material.
  • the weight of the target member is preferably added, and in the step of arranging the second connection target member and the step of forming the connection portion, the conductive material exceeds the weight force of the second connection target member. It is preferable that no pressure is applied. In these cases, the uniformity of the amount of solder can be further enhanced in the plurality of solder portions.
  • the thickness of the solder portion can be made even more effective, and a large amount of solder in a plurality of conductive particles tends to gather between the electrodes, and the solder in the plurality of conductive particles is more efficiently distributed on the electrode (line). Can be arranged. In addition, it is difficult for a part of the solder in the plurality of conductive particles to be disposed in the region (space) where the electrode is not formed, and the amount of solder in the conductive particle disposed in the region where the electrode is not formed is further increased. Can be reduced. Therefore, the conduction reliability between the electrodes can be further enhanced. In addition, the electrical connection between the laterally adjacent electrodes that should not be connected can be further prevented, and the insulation reliability can be further improved.
  • connection portion if the weight of the second connection target member is added to the conductive material without applying pressure, the connection portion is Solder arranged in a region (space) where no electrode is formed before it is formed is more likely to gather between the first electrode and the second electrode, and solder in a plurality of conductive particles can be It has also been found that it can be arranged more efficiently on the line).
  • a configuration in which a conductive paste is used instead of a conductive film and a configuration in which the weight of the second connection target member is added to the conductive paste without applying pressure are used in combination. This has a great meaning in order to obtain the effects of the present invention at a higher level.
  • WO2008 / 023452A1 describes that it is preferable to pressurize with a predetermined pressure at the time of bonding from the viewpoint of efficiently moving the solder powder to the electrode surface, and the pressurizing pressure further ensures the solder area.
  • the pressure is set to 0 MPa or more, preferably 1 MPa or more.
  • a predetermined pressure may be applied to the adhesive tape by its own weight.
  • WO2008 / 023452A1 it is described that the pressure applied intentionally to the adhesive tape may be 0 MPa, but there is no difference between the effect when the pressure exceeding 0 MPa is applied and when the pressure is set to 0 MPa. Not listed.
  • WO2008 / 023452A1 recognizes nothing about the importance of using a paste-like conductive paste instead of a film.
  • a conductive paste is used instead of a conductive film, it becomes easy to adjust the thicknesses of the connection part and the solder part depending on the amount of the conductive paste applied.
  • the conductive film in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is.
  • the melt viscosity of the conductive film compared with the conductive paste, the melt viscosity of the conductive film cannot be sufficiently lowered at the melting temperature of the solder, and the aggregation of the solder tends to be hindered.
  • FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive material according to an embodiment of the present invention.
  • connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3.
  • Part 4 is formed of the conductive material described above.
  • the conductive material includes solder particles as conductive particles.
  • the connecting portion 4 includes a solder portion 4A in which a plurality of solder particles are gathered and joined to each other, and a cured product portion 4B in which a thermosetting component is thermally cured.
  • the first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface).
  • the second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface).
  • the first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A.
  • no solder exists in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a.
  • connection structure 1 a plurality of solder particles gather between the first electrode 2 a and the second electrode 3 a, and after the plurality of solder particles melt, After the electrode surface wets and spreads, it solidifies to form the solder portion 4A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. That is, by using solder particles, the solder portion 4A, the first electrode 2a, and the solder as compared with the case where the outer surface portion of the conductive portion is made of conductive particles such as nickel, gold or copper are used. The contact area between the portion 4A and the second electrode 3a increases. For this reason, the conduction
  • the conductive material may contain a flux.
  • the flux is generally deactivated gradually by heating.
  • connection structure 1 shown in FIG. 1 all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a.
  • the connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X.
  • the connection part 4X has the solder part 4XA and the hardened
  • most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area
  • the solder part 4XA protruding laterally from the region where the first and second electrodes 2a and 3a are opposed is a part of the solder part 4XA and is not a solder separated from the solder part 4XA.
  • the amount of solder away from the solder portion can be reduced, but the solder away from the solder portion may exist in the cured product portion.
  • connection structure 1 If the amount of solder particles used is reduced, the connection structure 1 can be easily obtained. If the amount of the solder particles used is increased, it becomes easy to obtain the connection structure 1X.
  • the portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode is seen.
  • the solder portion in the connection portion is preferably disposed.
  • connection structure 1 using the conductive material Next, an example of a method for manufacturing the connection structure 1 using the conductive material according to the embodiment of the present invention will be described.
  • the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared.
  • a conductive material 11 including a thermosetting component 11B and a plurality of solder particles 11A is disposed on the surface of the first connection target member 2 (first Process).
  • the used conductive material 11 contains a thermosetting compound and a thermosetting agent as the thermosetting component 11B.
  • the conductive material 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided. After the conductive material 11 is disposed, the solder particles 11A are disposed both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
  • the arrangement method of the conductive material 11 is not particularly limited, and examples thereof include application by a dispenser, screen printing, and discharge by an inkjet device.
  • the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared.
  • the 2nd connection object member 3 is arrange
  • the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
  • the conductive material 11 is heated to a temperature equal to or higher than the melting point of the solder particles 11A (third step).
  • the conductive material 11 is heated above the curing temperature of the thermosetting component 11B (binder).
  • the solder particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect).
  • the thermosetting component 11B is thermoset. As a result, as shown in FIG.
  • connection portion 4 that connects the first connection target member 2 and the second connection target member 3 is formed of the conductive material 11.
  • the connection part 4 is formed of the conductive material 11
  • the solder part 4A is formed by joining a plurality of solder particles 11A
  • the cured part 4B is formed by thermosetting the thermosetting component 11B.
  • the electrode of the first connection target member Even when the first connection target member and the second connection target member are overlapped in a state where the alignment with the electrode of the second connection target member is shifted, the shift is corrected and the first connection target is corrected.
  • the electrode of the member can be connected to the electrode of the second connection target member (self-alignment effect). This is because the molten solder self-aggregated between the electrode of the first connection target member and the electrode of the second connection target member is the electrode of the first connection target member and the electrode of the second connection target member.
  • connection structure with alignment As the area where the solder and the other components of the conductive material are in contact with each other is minimized, the energy becomes more stable. Therefore, the force that makes the connection structure with alignment, which is the connection structure with the smallest area, works. Because. At this time, it is desirable that the conductive material is not cured, and that the viscosity of components other than the conductive particles of the conductive material is sufficiently low at that temperature and time.
  • connection structure 1 shown in FIG. 1 is obtained.
  • the second step and the third step may be performed continuously.
  • the laminated body of the 1st connection object member 2, the electrically-conductive material 11, and the 2nd connection object member 3 which are obtained is moved to a heating part, and the said 3rd connection object is carried out.
  • You may perform a process.
  • the laminate In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
  • the heating temperature in the third step is preferably 140 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and still more preferably 200 ° C. or lower.
  • connection structure As the heating method in the third step, a method of heating the entire connection structure using a reflow furnace or an oven above the melting point of the solder and the curing temperature of the thermosetting component, or a connection structure The method of heating only the connection part of these is mentioned.
  • the first and second connection target members are not particularly limited. Specifically as said 1st, 2nd connection object member, electronic components, such as a semiconductor chip, a semiconductor package, LED chip, LED package, a capacitor
  • the first and second connection target members are preferably electronic components.
  • At least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
  • the second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for connection of such a connection object member, there exists a tendency for a solder not to gather on an electrode.
  • the conductive reliability between the electrodes can be efficiently collected by collecting the solder on the electrodes. Can be sufficiently increased.
  • connection target member Peripherals, area arrays, etc. exist in the form of the connection target member.
  • the electrodes are present only on the outer peripheral portion of the substrate.
  • the area array substrate there are electrodes in the plane.
  • the electrode provided on the connection target member examples include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, a SUS electrode, and a tungsten electrode.
  • the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode.
  • the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode.
  • the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
  • the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
  • the trivalent metal element include Sn, Al, and Ga.
  • connection target member Peripherals, area arrays, etc. exist in the form of the connection target member.
  • the electrodes are present only on the outer peripheral portion of the substrate.
  • the area array substrate there are electrodes in the plane.
  • Thermosetting compound "YL980” manufactured by Mitsubishi Chemical Corporation, bisphenol A type epoxy resin "HP-7200H” manufactured by DIC, dicyclopentadiene type epoxy resin, softening point 78-88 ° C
  • Thermosetting agent "HXA3922HP” manufactured by Asahi Kasei E-Materials
  • Curing accelerator "2MA-OK” manufactured by Shikoku Kasei Kogyo Co., Ltd., imidazole curing accelerator
  • Inorganic filler “SE-1050-SPJ” manufactured by Admatex, average particle size 0.3 ⁇ m
  • Conductive particles SnBi solder particles (average particle size 30 ⁇ m), manufactured by Mitsui Kinzoku Co., Ltd., Sn42Bi58 SnBi solder particles (average particle size 13 ⁇ m), manufactured by Mitsui Kinzoku Co., Ltd., Sn42Bi58 SnBi solder particles (average particle diameter 10 ⁇ m), manufactured by Mitsui Kinzoku Co., Ltd., Sn42Bi58 SnBi solder particles (average particle size 7 ⁇ m), manufactured by Mitsui Kinzoku Co., Ltd., Sn42Bi58 SnBi solder particles (average particle size 3 ⁇ m), manufactured by Mitsui Kinzoku Co., Ltd., Sn42Bi58
  • a 250 ⁇ m copper electrode with a pitch of 400 ⁇ m is provided on the surface of a semiconductor chip body (size 5 ⁇ 5 mm, thickness 0.4 mm)
  • a semiconductor chip was prepared, which is arranged in an area array and has a passivation film (polyimide, thickness 5 ⁇ m, opening diameter of electrode part 200 ⁇ m) formed on the outermost surface.
  • the number of copper electrodes is 10 ⁇ 10 in total per 100 semiconductor chips.
  • the same pattern is formed on the surface of the glass epoxy substrate body (size 20 ⁇ 20 mm, thickness 1.2 mm, material FR-4) with respect to the electrodes of the first connection target member.
  • positioned was prepared.
  • the level difference between the surface of the copper electrode and the surface of the solder resist film is 15 ⁇ m, and the solder resist film protrudes from the copper electrode.
  • the anisotropic conductive paste immediately after fabrication was applied to the upper surface of the glass epoxy substrate so as to have a thickness of 100 ⁇ m to form an anisotropic conductive paste layer.
  • a semiconductor chip was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other.
  • the weight of the semiconductor chip is added to the anisotropic conductive paste layer.
  • the anisotropic conductive paste layer was heated so that the temperature became 139 ° C. (melting point of solder) after 5 seconds from the start of temperature increase. Further, 15 seconds after the start of temperature increase, the anisotropic conductive paste layer was heated to 160 ° C. to cure the anisotropic conductive paste, and a connection structure was obtained. No pressure was applied during heating.
  • a 250 ⁇ m copper electrode with a pitch of 400 ⁇ m is provided on the surface of a semiconductor chip body (size 5 ⁇ 5 mm, thickness 0.4 mm).
  • a semiconductor chip was prepared, which is arranged (peripheral) on the outer periphery of the chip and has a passivation film (polyimide, thickness 5 ⁇ m, opening diameter of electrode part 200 ⁇ m) formed on the outermost surface.
  • the number of copper electrodes is a total of 36 pieces of 10 ⁇ 4 sides per semiconductor chip.
  • the same pattern is formed on the surface of the glass epoxy substrate body (size 20 ⁇ 20 mm, thickness 1.2 mm, material FR-4) with respect to the electrodes of the first connection target member.
  • the step between the surface of the copper electrode where the copper electrode is disposed and the solder resist film is formed in the region where the copper electrode is not disposed and the surface of the solder resist film is 15 ⁇ m, and the solder resist film is made of copper. It protrudes from the electrode.
  • the anisotropic conductive paste immediately after fabrication was applied to the peripheral portion on the upper surface of the glass epoxy substrate so as to have a thickness of 100 ⁇ m to form an anisotropic conductive paste layer.
  • a semiconductor chip was laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other.
  • the weight of the semiconductor chip is added to the anisotropic conductive paste layer.
  • the anisotropic conductive paste layer was heated so that the temperature became 139 ° C. (melting point of solder) after 5 seconds from the start of temperature increase. Further, 15 seconds after the start of temperature increase, the anisotropic conductive paste layer was heated to 160 ° C. to cure the anisotropic conductive paste, and a connection structure was obtained. No pressure was applied during heating.
  • Viscosity The viscosity ( ⁇ mp) of the conductive material at the melting point of the solder in the conductive particles is not more than 25 ° C., and the minimum value of the viscosity of the conductive material at the melting point of the solder in the conductive particles is not more than 25 ° C. ) And the maximum value ( ⁇ max) were measured under the conditions of strain control 1 rad, frequency 1 Hz, heating rate 20 ° C./min, and measurement temperature range 25 to 200 ° C. using STRESSTECH (manufactured by EOLOGICA).
  • Ratio X is 90% or more ⁇ : Ratio X is 80% or more and less than 90% ⁇ : Ratio X is 60% or more and less than 80% X: Ratio X is less than 60%
  • ⁇ Average value of connection resistance is 10 7 ⁇ or more ⁇ : Average value of connection resistance is 10 6 ⁇ or more, less than 10 7 ⁇ ⁇ : Average value of connection resistance is 10 5 ⁇ or more, less than 10 6 ⁇ ⁇ : Connection The average resistance is less than 10 5 ⁇

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

L'invention concerne un matériau conducteur qui permet un agencement sélectif de brasure dans des particules conductrices entre des électrodes agencées verticalement, qui rend difficile un agencement de brasure dans des particules conductrices entre des électrodes agencées horizontalement, et qui peut améliorer la fiabilité de conduction et la fiabilité d'isolation. Le matériau conducteur selon la présente invention contient, dans la partie de surface extérieure d'une partie conductrice dudit matériau, un composant thermodurcissable et une pluralité de particules conductrices comprenant de la brasure. La valeur minimale de la viscosité du matériau conducteur est de 25 à 255 Pa·s à une température allant de 25 °C au point de fusion de la brasure dans les particules conductrices. Le diamètre de particule moyen des particules conductrices est de 3 à 15 μm. Quand le diamètre de particule moyen des particules conductrices est A (µm) et la viscosité (Pa·s) du matériau conducteur au point de fusion (°C) de la brasure dans les particules conductrices est B, B est supérieur ou égal à (-5A + 100) et inférieur ou égal à (-15A + 300).
PCT/JP2016/074528 2015-08-24 2016-08-23 Matériau conducteur et structure de connexion WO2017033931A1 (fr)

Priority Applications (3)

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JP2016556046A JPWO2017033931A1 (ja) 2015-08-24 2016-08-23 導電材料及び接続構造体
CN201680032753.8A CN107636772A (zh) 2015-08-24 2016-08-23 导电材料以及连接结构体
KR1020177023798A KR20180043192A (ko) 2015-08-24 2016-08-23 도전 재료 및 접속 구조체

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11404607B2 (en) 2019-05-28 2022-08-02 Samsung Electronics Co.. Ltd. Display apparatus, source substrate structure, driving substrate structure, and method of manufacturing display apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008023452A1 (fr) * 2006-08-25 2008-02-28 Sumitomo Bakelite Co., Ltd. Bande adhésive, structure de jonction, et ensemble semi-conducteur
JP2009032657A (ja) * 2007-06-26 2009-02-12 Sony Chemical & Information Device Corp 異方性導電材料、接続構造体及びその製造方法
JP2011175846A (ja) * 2010-02-24 2011-09-08 Hitachi Chem Co Ltd 回路部材接続用接着フィルム、回路部材接続構造体及び回路部材接続構造体の製造方法
JP2012169263A (ja) * 2011-01-24 2012-09-06 Sekisui Chem Co Ltd 異方性導電材料、接続構造体の製造方法及び接続構造体
JP2013173819A (ja) * 2012-02-23 2013-09-05 Tamura Seisakusho Co Ltd 熱硬化性樹脂組成物
JP2013258139A (ja) * 2012-05-18 2013-12-26 Sekisui Chem Co Ltd 導電材料、接続構造体及び接続構造体の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008023452A1 (fr) * 2006-08-25 2008-02-28 Sumitomo Bakelite Co., Ltd. Bande adhésive, structure de jonction, et ensemble semi-conducteur
JP2009032657A (ja) * 2007-06-26 2009-02-12 Sony Chemical & Information Device Corp 異方性導電材料、接続構造体及びその製造方法
JP2011175846A (ja) * 2010-02-24 2011-09-08 Hitachi Chem Co Ltd 回路部材接続用接着フィルム、回路部材接続構造体及び回路部材接続構造体の製造方法
JP2012169263A (ja) * 2011-01-24 2012-09-06 Sekisui Chem Co Ltd 異方性導電材料、接続構造体の製造方法及び接続構造体
JP2013173819A (ja) * 2012-02-23 2013-09-05 Tamura Seisakusho Co Ltd 熱硬化性樹脂組成物
JP2013258139A (ja) * 2012-05-18 2013-12-26 Sekisui Chem Co Ltd 導電材料、接続構造体及び接続構造体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11404607B2 (en) 2019-05-28 2022-08-02 Samsung Electronics Co.. Ltd. Display apparatus, source substrate structure, driving substrate structure, and method of manufacturing display apparatus

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CN107636772A (zh) 2018-01-26
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JPWO2017033931A1 (ja) 2018-06-07

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