WO2017032247A1 - Procédé de fabrication d'une plaque de masque magnétique destinée à une évaporation - Google Patents

Procédé de fabrication d'une plaque de masque magnétique destinée à une évaporation Download PDF

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Publication number
WO2017032247A1
WO2017032247A1 PCT/CN2016/095610 CN2016095610W WO2017032247A1 WO 2017032247 A1 WO2017032247 A1 WO 2017032247A1 CN 2016095610 W CN2016095610 W CN 2016095610W WO 2017032247 A1 WO2017032247 A1 WO 2017032247A1
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WIPO (PCT)
Prior art keywords
layer
mask
metal
photoresist
photoresist film
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PCT/CN2016/095610
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English (en)
Chinese (zh)
Inventor
魏志凌
赵录军
魏志浩
张炜平
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昆山允升吉光电科技有限公司
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Publication of WO2017032247A1 publication Critical patent/WO2017032247A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C23F1/04—Chemical milling
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching

Definitions

  • the invention belongs to the display panel industry, and relates to a mask for vapor deposition used in the process of manufacturing an OLED display panel, and particularly relates to a method for fabricating a magnetic mask for vapor deposition.
  • OLED Organic Light-Emitting Diode
  • OLED has no backlight, high contrast, thin thickness, wide viewing angle, fast response, flexible panel, and wide temperature range.
  • the excellent characteristics of structure, process and process are considered to be the next generation of flat panel display emerging application technologies.
  • OLED is a solid material
  • VTE vacuum thermal evaporation
  • the organic molecules located in the vacuum chamber are slightly heated (evaporated), so that these molecules are condensed in the form of a thin film on a substrate having a lower temperature.
  • a high-precision mask suitable for the accuracy of the OLED light-emitting display unit is required as a medium.
  • FIG. 1 is a schematic view showing a structure of a mask for OLED evaporation, in which a mask 11 having a mask pattern 10 is fixed on the outer frame 12, wherein the mask 11 and the outer frame 12 are made of a metal material.
  • 2 is a schematic enlarged cross-sectional view taken along the line A-A in FIG. 1, 20 is a mask portion, and 21 is a mask opening when an organic material is vapor-deposited, since the mask 11 is generally formed by an etching process of a metal foil.
  • the size of the mask portion (20) and the opening (21) of the mask pattern (10) may be limited by the thickness h (h is generally greater than 30 ⁇ m) of the foil itself and the process, thereby limiting the resolution of the final OLED product;
  • the width dimension d1 of the opening (21) is difficult to further reduce (it is very difficult to make the opening of d1 less than 30um at present), and even if it can be made small, the opening of a large aspect ratio cannot satisfy the high-quality evaporation. process.
  • the metal-type mask body 11 will have a large mass, which may cause the mask body 11 to sag (ie, a concave phenomenon occurs in the middle of the board surface), which is accurate.
  • a higher mask evaporation process is disadvantageous. In view of this, there is a need in the industry for a solution that can solve this problem.
  • the present invention provides a central mask manufacturing process, and the mask produced by the process can effectively overcome the above problems, and the specific technical solutions are as follows.
  • a method for manufacturing a magnetic mask for vapor deposition comprising the steps of:
  • a metal support layer is fabricated, and a metal support layer having a certain thickness is formed, and the metal support layer is provided with a specific window structure;
  • a surface of the metal support layer is coated, and a surface of the metal support layer having a window structure is coated with a photoresist having a certain thickness to form a photoresist film layer;
  • the metal supporting layer and the photoresist film layer having an opening structure constitute the magnetic mask, the thickness of the photoresist film layer is not greater than the thickness of the metal supporting layer, and the opening formed on the mask layer
  • the structure corresponds to the non-exposed area in the step S3
  • the opening structure formed on the mask layer is inside the window structure of the metal supporting layer, and at least one inside each window structure on the metal supporting layer The opening structure.
  • the metal supporting layer in the step S1 is fabricated by a chemical etching, laser cutting or electroforming process.
  • the metal supporting layer in the step S1 is fabricated by a chemical etching process, and the chemical etching process includes the following steps:
  • the exposed photosensitive film region is a region other than the window structure, and the photosensitive film in the region where the window structure is located is not exposed;
  • step S13 developing, performing a development process on the photosensitive film layer after the exposure process in step S12, removing the photosensitive film on the region where the window structure is not exposed, to form an area to be etched;
  • the film is removed, and the etched sheet is subjected to a film-removing treatment, and the photosensitive film adhered on the surface thereof is completely removed, thereby forming a metal supporting layer having a window structure.
  • the magnetic mask is formed in an oven for baking and curing.
  • window structures on the metal supporting layer are arranged in an array manner.
  • the film is coated by a photoresist film or a photoresist film coating method.
  • the thickness of the metal supporting layer ranges from 20 to 60 ⁇ m; and the thickness of the mask layer ranges from 2 to 20 ⁇ m.
  • the opening structure formed on the mask layer has a size ranging from 15 to 40 ⁇ m.
  • the method further includes:
  • the protective film is pressed, and a protective film is pressed on the opposite side of the metal sheet having the photosensitive film layer to form a protection for the metal sheet in the S14 etching step.
  • the material of the metal supporting layer in the present invention is stainless steel, Invar or other nickel-based alloy.
  • the constituent materials of the conventional mask are all metal alloys
  • the present invention provides a method for fabricating a mask completely different from the existing etching process, and the magnetic mask produced by the method
  • the utility model has the following advantages: the organic mask layer constituting the mask can be made thin due to the function of the metal mask supporting layer, so that the opening of the opening is further ensured under the premise that the opening of the mask layer has a small aspect ratio. The width dimension is made smaller so that the resulting final magnetic mask can be evaporated to form a higher resolution OLED product.
  • FIG. 1 is a schematic structural view of a mask for OLED evaporation in the prior art
  • Figure 2 is a schematic enlarged cross-sectional view taken along line A-A of Figure 1;
  • FIG. 3 is a flow chart showing a magnetic mask manufacturing process provided by the present invention.
  • FIG. 4 is a schematic view showing the fabrication of a mask using the method provided by the present invention.
  • Figure 5 is a schematic view showing another method of fabricating a mask using the method provided by the present invention.
  • FIG. 6 is a schematic view showing a manufacturing process of a metal supporting layer in the present invention.
  • FIG. 7 is a schematic view showing another manufacturing process of the technical support layer in the present invention.
  • Figure 8 is a schematic overall view of a magnetic mask produced by the method of the present invention.
  • Figure 9 is a cross-sectional view taken along line B-B of Figure 8.
  • Figure 10 is a schematic overall view of a mask layer constituting a magnetic mask
  • Figure 11 is a schematic overall view of a metal support layer constituting a magnetic mask
  • Figure 12 is an enlarged schematic view showing a region I in Figure 9;
  • FIG. 13 is a schematic overall view of another magnetic mask produced by the method of the present invention.
  • Figure 14 is an enlarged schematic view of a portion I of Figure 13;
  • Figure 15 is a cross-sectional view taken along line B-B of Figure 14;
  • Figure 16 is a schematic view of the reverse side of Figure 14;
  • Figure 17 is a schematic view showing another structure different from the mask of the present invention.
  • Figure 18 is a schematic view showing the vapor deposition of an organic material using the magnetic mask of the present invention.
  • 41 is a metal supporting layer
  • 410 is a window structure on a metal supporting layer
  • 42 is a photoresist film layer
  • 420 is an opening structure on the photoresist film layer 42
  • 421 is an exposed region
  • 422 is a developing region
  • 40 is a metal sheet
  • 60 is a photosensitive film layer
  • 601 is a region exposed on the photosensitive film layer
  • 602 is an unexposed region
  • 600 is a bare region to be etched after development
  • 61 is a protective film layer
  • 30 is a magnetic mask
  • 311 is an opening unit formed by an array of opening structures 420 provided on the magnetic mask 30 for vapor deposition
  • BB is a section to be cross-section
  • d2 is between adjacent two opening units 311.
  • 312 is a gap between two adjacent opening units 311 on the photoresist film layer 42;
  • 411 is a support strip between two adjacent window structures 410, and d4 is the width of the support strip 411;
  • h1 is the thickness of the mask layer (i.e., the thickness of the photoresist film layer)
  • h2 is the thickness of the metal supporting layer
  • d3 is the spacing between adjacent two opening structures 420 in the same opening unit 311 on the mask layer.
  • B-B is a section to be cross-sectioned
  • Fig. 18 80 is a substrate, 81 is a fixing mechanism for fixing the mask assembly, and 82 is an organic vapor deposition source.
  • FIG. 3 is a flow chart showing the manufacturing process of the magnetic mask provided by the present invention
  • FIG. 4 is a schematic view showing the method for fabricating the mask by using the method provided by the present invention
  • FIG. 5 is a schematic view showing another process of fabricating a mask by using the method provided by the present invention
  • FIG. 6 is a schematic view showing a process of fabricating a metal support layer according to the present invention
  • FIG. 7 is another embodiment of the technical support layer of the present invention.
  • the magnetic mask manufacturing process provided by the present invention comprises the steps of: S1, metal support layer fabrication; S2, metal support layer surface coating; S3, photoresist film exposure; S4, photoresist film development .
  • a metal support layer is fabricated, a metal support layer 41 having a certain thickness is formed, and a specific window structure 410 is disposed on the metal support layer 41;
  • a metal support layer surface coating a surface of the metal support layer 41 having the window structure 410 is coated with a photoresist having a certain thickness to form a photoresist film layer 42;
  • the photoresist film layer is exposed, the metal support layer 41 has a photoresist film layer 42 on one side of the exposure process, the predetermined area is exposed, the exposed area 421 and the non-exposed area 422 are formed on the photoresist film layer 42;
  • the photoresist film is developed, the photoresist in the non-exposed region 422 in the step S3 is removed by development, the photoresist of the exposed region 421 is retained, and the photoresist film layer 42 having the opening structure 420 is formed after development to constitute the magnetic material for vapor deposition.
  • a mask layer of the reticle
  • the metal supporting layer 41 and the photoresist film layer 42 having the opening structure 420 constitute a magnetic mask plate according to the present invention.
  • the thickness of the photoresist film layer 42 is not greater than the thickness of the metal supporting layer 41, and the opening structure 420 formed on the mask layer.
  • the opening structure 420 formed on the mask layer is inside the window structure 410 of the metal supporting layer 41 (i.e., the edge of the opening structure 420 is inside the region formed by the edge of the window structure 410)
  • Each of the window structures 410 on the metal support layer 41 has at least one opening structure 420 therein.
  • FIG. 5 is a schematic view showing another embodiment of the mask fabrication by the method provided by the present invention, which has the following difference from that shown in FIG. 4: in the embodiment shown in FIG. 5, each window structure on the metal support layer 41
  • the interior 410 has two open structures 420; and in the embodiment of FIG. 4, each of the window structures 410 on the metal support layer 41 has only one open structure 420 therein.
  • each of the window structures 410 on the metal support layer 41 may have more open structures 420 inside, even inside each of the window structures 410 on the metal support layer 41.
  • the opening structure 420 can form an array (see, for example, subsequent embodiments).
  • the metal supporting layer in the step S1 of the present invention is fabricated by a chemical etching process.
  • FIG. 6 is a schematic view showing the manufacturing process of the metal supporting layer in the present invention, and the chemical etching process includes the following steps:
  • the exposed photosensitive film region is a region 601 other than the window structure 410, and the photosensitive film of the region 602 where the window structure 410 is located is not exposed;
  • the film is removed, and the etched sheet is subjected to a film-removing treatment, and the photosensitive film (ie, the previously exposed photosensitive film) adhered to the surface is completely removed, thereby obtaining a metal supporting layer 41 having a window structure 410.
  • FIG. 7 is a schematic view showing another manufacturing process of the technical support layer in the present invention. Unlike the embodiment shown in FIG. 6, in the embodiment shown in FIG. 7, a protective film pressing step is also included, that is, in the chemical etching process. Prior to the S14 etching step, a protective film 61 is pressed against the opposite side of the metal sheet 40 having the photosensitive film layer 60 to form a protective sheet for the metal sheet in the S14 etching step. Specifically, as shown in FIG. 7, in the S11 filming step, the protective film 61 is pressed under the metal sheet 40. surface.
  • the metal supporting layer can also be produced by a laser cutting process or an electroforming process.
  • the S4 photoresist film layer developing step further includes the following steps:
  • the window structure 41 on the metal support layer of the magnetic mask obtained by the present invention is arranged in an array manner, and correspondingly, is disposed in the mask.
  • the opening structures 420 on the film layer are also arranged in an array.
  • the film is coated by a photoresist film or a photoresist film coating method.
  • the photoresist dry film is used for the overmolding method, that is, the photoresist is pre-formed into a dry film of a certain thickness, and then the photoresist dry film is attached to the surface of the metal support layer by pressing; the photoresist is coated with a photoresist
  • the overmolding method is to uniformly coat the emulsion-like wet film on the surface of the metal supporting layer by mechanical coating.
  • the thickness of the metal supporting layer 41 ranges from 20 to 60 ⁇ m; the thickness of the mask layer (ie, the thickness of the photoresist film layer 42) ranges from: 2-20 ⁇ m.
  • the thickness of the support layer 41 is 25 ⁇ m, 30 ⁇ m, 35 ⁇ m, 40 ⁇ m, 45 ⁇ m, 50 ⁇ m, 55 ⁇ m, and the thickness of the photoresist film layer 42 is 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 12 ⁇ m, 15 ⁇ m, and 18 ⁇ m.
  • the thickness range of the metal supporting layer 41 is not limited to 20-60 ⁇ m, and the thickness of the mask layer (ie, the thickness of the photoresist film layer 42) is not limited to 2. -20 ⁇ m.
  • the opening structure formed on the mask layer serves as a final definition of the evaporation quality of the organic material in the evaporation application process.
  • the size of the opening structure 420 formed on the mask layer is 15-40 ⁇ m can be specifically designed to be 18 ⁇ m, 20 ⁇ m, 25 ⁇ m, 30 ⁇ m, and 35 ⁇ m.
  • the material of the metal supporting layer in the present invention is stainless steel, Invar or other nickel-based alloy. It is also possible to select other metal materials with superior properties, and even other non-metal materials that can function the same as the above metal materials.
  • FIG. 8 is a schematic overall view of a magnetic mask produced by the method of the present invention
  • FIG. 9 is a cross-sectional view taken along line BB of FIG. 8
  • FIG. 10 is an overall schematic view of a mask layer constituting a magnetic mask.
  • FIG. 11 is a schematic overall view of a metal supporting layer constituting a magnetic mask;
  • FIG. 12 is an enlarged schematic view showing a region I of FIG.
  • FIG. 8 is a schematic overall view of a magnetic mask produced by the method of the present invention.
  • a schematic cross-sectional view is shown in FIG. 9.
  • the magnetic mask 30 is composed of a two-layer structure of a photoresist film layer 42 and a metal support layer 41.
  • the resist layer 42 is provided with a plurality of opening units 311 formed by an array of opening structures 420. As shown in FIG.
  • the width d2 of the gap 312 between the adjacent two opening units 311 is larger than the spacing d3 between the adjacent two opening structures 420 in the same opening unit 311;
  • the metal supporting layer 41 serves as a carrier of the photoresist film layer 42,
  • the metal support layer 41 is provided with a plurality of hollowed window structures 410, which are distinguished by a plurality of internally staggered support bars 411, as shown in FIG.
  • the photoresist film layer 42 of the magnetic mask 30 is closely adhered to the metal supporting layer 41, and the photoresist is
  • the opening unit 311 of the film layer 42 corresponds to the window structure 410 of the metal supporting layer 41, that is, as shown in FIG.
  • each of the opening units 311 constituted by the opening structure 420 corresponds to the position of the corresponding window structure 410.
  • the support bars 411 of the metal supporting layer 41 are disposed on the gap 312 formed between the adjacent two opening units 311 on the photoresist film layer 42. As shown in FIGS. 9 and 12, the position of the support bar 411 is between the opening unit 311 and the opening unit 311. The gap 312 position corresponds.
  • the width of the support strip 411 is adapted to the width of the gap 312 formed between the adjacent two opening units 311 on the photoresist film layer 42, and the metal support layer 41 does not block the opening structure 420 of the photoresist film layer 42. As shown in FIG. 12, the width d4 of the support bar 411 is not greater than the width d2 of the gap 312 between the corresponding adjacent two opening cells 311.
  • the open area 311 of the mask layer of the magnetic mask and the hollow window of the metal supporting layer 41 form an array of 4*3, as shown in FIG. 10 and FIG. 11, the positions of the opening unit 311 are one by one. Corresponds to the position of the window structure 410.
  • FIG. 13 to 17 are schematic views showing an embodiment of another different magnetic mask produced by the technical solution provided by the present invention.
  • 13 is an overall schematic view of a magnetic mask
  • FIG. 14 is an enlarged schematic view of a portion I of FIG. 13
  • FIG. 15 is a schematic cross-sectional view of the BB direction of FIG. 14; Another structurally similar schematic.
  • the window structure 410 of the magnetic mask metal support layer 41 and the opening structure 420 of the photoresist film layer 42 are in a one-to-one correspondence, that is, each window structure 410 is internally provided with a
  • the opening structure 420 is integrally formed in an array.
  • each window structure 410 in the embodiment shown in FIG. The portion is provided with two opening structures 420.
  • the mask structure fabricated by the technical solution provided by the present invention may also have one window structure corresponding to three opening structures 420, and even one window structure corresponds to more opening structures 420.
  • Figure 18 is a schematic view showing the vapor deposition of an organic material using the magnetic mask of the present invention.
  • the mask 30 mounted on the outer frame 12 is fixed to the fixing mechanism 81 by the outer frame 12, and the upper portion of the mask 30 is disposed.
  • the substrate 80 to be vapor-deposited is provided with an organic vapor deposition source 82.
  • the organic material in the organic evaporation source 82 is diffused into the chamber by evaporation, and the diffused organic material is deposited on the substrate 80 through the hollow opening of the mask 30.
  • An organic light emitting layer is formed.
  • a magnetic adsorption device is generally disposed behind the substrate.
  • the mask plate according to the present invention retains a metal layer structure, which has the magnetic properties of the conventional mask plate, and can be adsorbed by the magnetic adsorption device behind the substrate in the later application process, thereby further reducing the amount of sag of the mask.
  • the constituent materials of the conventional mask are all metal alloys
  • the present invention provides a method for fabricating a mask completely different from the existing etching process, and the magnetic method produced by the method.
  • the reticle has the following advantages: due to the role of the metal mask supporting layer, the organic mask layer constituting the reticle can be made thin, so that the mask layer opening has a small aspect ratio, further The width dimension of the opening is made smaller so that the resulting final magnetic mask can be evaporated to form a higher resolution OLED product.
  • the mask plate produced by the present invention finally determines the deposition effect of the organic material as the opening structure 420 of the photoresist film layer 42. Since the photoresist has the characteristics of an organic material, it is relatively easy to achieve "light and thin”. Due to its "light” characteristics, the metal support layer 41 underneath it is easy To achieve support thereof; and the "thin” feature, the opening structure 42 disposed thereon can easily realize a small-sized opening design.
  • the "magnetic mask” and the “mask” are the same concept; in the present invention, it should be noted that the photoresist and the photosensitive film are two different concepts, although they are all materials having photosensitive characteristics, However, in comparison, the photoresist after exposure has more stable performance than the exposed photosensitive film.
  • the photoresist is used as a permanent material after exposure, which is not easily damaged by the outside, and the photosensitive film is only etched. Auxiliary material.
  • any reference to "an embodiment”, “an embodiment”, “an exemplary embodiment” or the like means that a particular component, structure or feature described in connection with the embodiment is included in at least one embodiment of the invention. This schematic representation throughout the specification does not necessarily refer to the same embodiment. Further, when a specific component, structure or feature is described in connection with any embodiment, it is claimed that such a component, structure or feature in combination with other embodiments is within the scope of those skilled in the art.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une plaque de masque magnétique destinée à une évaporation. Le procédé comprend : S1 : la fabrication d'une couche de support métallique ; S2 : le recouvrement de la surface de la couche de support métallique avec un film ; S3 : la réalisation d'une exposition sur une couche de film de résine photosensible ; et S4 : la réalisation d'un développement sur la couche de film de résine photosensible. Selon la plaque de masque magnétique fabriquée au moyen du procédé, une couche de masque organique formant la plaque de masque peut être réalisée de manière à être très mince, en outre, la largeur d'une ouverture est rendue plus petite, de sorte que la plaque de masque magnétique finale peut être utilisée pour une évaporation, pour former des produits à diodes électroluminescentes organiques (OLED) présentant une résolution plus élevée.
PCT/CN2016/095610 2015-08-22 2016-08-17 Procédé de fabrication d'une plaque de masque magnétique destinée à une évaporation WO2017032247A1 (fr)

Applications Claiming Priority (2)

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CN201510517492.6A CN105063553A (zh) 2015-08-22 2015-08-22 一种蒸镀用磁性掩模板的制作方法
CN2015105174926 2015-08-22

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CN105220110A (zh) * 2015-10-20 2016-01-06 昆山允升吉光电科技有限公司 一种蒸镀用复合磁性掩模板的制作方法
CN105714248A (zh) * 2016-04-01 2016-06-29 昆山允升吉光电科技有限公司 一种高精度蒸镀用复合掩模板组件制作方法
CN105714246A (zh) * 2016-04-01 2016-06-29 昆山允升吉光电科技有限公司 一种oled蒸镀用掩模板组件制作方法
CN105720083A (zh) * 2016-04-01 2016-06-29 昆山允升吉光电科技有限公司 一种高精度蒸镀用复合掩模板组件
CN107419216A (zh) * 2016-05-18 2017-12-01 上海和辉光电有限公司 一种金属掩膜板的制备方法
CN107507915B (zh) * 2017-08-09 2019-09-13 武汉华星光电半导体显示技术有限公司 一种制造有机发光显示面板的基板及蒸镀装置
CN110373629A (zh) * 2018-04-12 2019-10-25 上海和辉光电有限公司 一种高精度金属掩膜板及制造方法、高精度金属掩膜装置
CN108277454B (zh) * 2018-04-23 2021-01-26 京东方科技集团股份有限公司 精细掩模板及其制备方法
CN110158025B (zh) * 2018-05-31 2021-01-26 京东方科技集团股份有限公司 掩膜板的制作方法及掩膜板
CN108914056A (zh) * 2018-07-27 2018-11-30 京东方科技集团股份有限公司 一种掩膜板及其制作方法
CN111640882B (zh) * 2020-06-30 2022-09-16 湖北长江新型显示产业创新中心有限公司 一种显示面板及其制造方法、显示装置
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