WO2017031865A1 - 显示基板及其制备方法、透明显示装置 - Google Patents
显示基板及其制备方法、透明显示装置 Download PDFInfo
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- WO2017031865A1 WO2017031865A1 PCT/CN2015/097099 CN2015097099W WO2017031865A1 WO 2017031865 A1 WO2017031865 A1 WO 2017031865A1 CN 2015097099 W CN2015097099 W CN 2015097099W WO 2017031865 A1 WO2017031865 A1 WO 2017031865A1
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- Prior art keywords
- passivation layer
- thickness
- metal layer
- layer
- display substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 238000002161 passivation Methods 0.000 claims abstract description 132
- 229910052751 metal Inorganic materials 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 121
- CRQQGFGUEAVUIL-UHFFFAOYSA-N chlorothalonil Chemical compound ClC1=C(Cl)C(C#N)=C(Cl)C(C#N)=C1Cl CRQQGFGUEAVUIL-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- -1 Si 3 N 4 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
- G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Definitions
- Embodiments of the present invention relate to a display substrate, a method of fabricating the same, and a transparent display device.
- the bandpass filter refers to a band of high transmittance in the middle of a certain band, and a high-reflection band on both sides of the passband.
- Embodiments of the present invention provide a display substrate, a method of fabricating the same, and a transparent display device.
- Embodiments of the present invention provide a display substrate including: a substrate, a plurality of pixel regions, each of the pixel regions including a plurality of sub-pixel regions, and sequentially disposed on the substrate and located in the sub-pixel a first metal layer, a passivation layer, and a second metal layer, wherein the first metal layer and the second metal layer are both semi-transflective metal layers and are located in the same pixel region
- the thickness of the passivation layer of the plurality of sub-pixel regions is different, and
- the first metal layer, the passivation layer and the second metal layer constitute a Faber cavity, and the Faber cavity allows light of different wavelengths to pass according to the thickness of the passivation layer.
- each of the pixel regions includes three sub-pixel regions, and the passivation layers corresponding to the three sub-pixel regions respectively have a first thickness, a second thickness, and a third thickness, and the first thickness is blunt
- the sub-pixel region corresponding to the layer allows red light to pass through
- the sub-pixel region corresponding to the second thickness passivation layer allows green light to pass through
- the sub-pixel region corresponding to the third thickness passivation layer allows blue light to pass through Over.
- the second metal layer is silver and the second metal layer has a thickness of 35 to 45 nm.
- the passivation layer is a passivation layer made of any of MgF 2 , SiO 2 , Si 3 N 4 , TiO 2 .
- the first metal layer is silver and the first metal layer has a thickness of 35 to 45 nm.
- the second metal layer includes a plurality of spaced apart metal strips with a gap between the plurality of metal strips that allows light to pass therethrough.
- Embodiments of the present invention also provide a method for preparing a display substrate, the method comprising the following steps:
- the step of forming a passivation layer on the first metal layer and different thicknesses of the passivation layer of the plurality of the sub-pixel regions of the same pixel region includes:
- deposition time t1 Using the same mask in the first position, deposition time t1, to obtain a first thickness of the passivation layer;
- a deposition time t2 is obtained to obtain a passivation layer of a second thickness
- a deposition time t3 is obtained to obtain a passivation layer of a third thickness.
- the thickness of the passivation layer satisfies the following formula:
- d m* ⁇ /2n; where m is an odd number, n is the refractive index of the passivation layer, and ⁇ is the wavelength of the light that the sub-pixel region corresponding to the passivation layer of the thickness allows to pass.
- the material of the passivation layer is any one of MgF 2 , SiO 2 , Si 3 N 4 , and TiO 2 .
- the second metal layer includes a plurality of spaced apart metal strips with a gap between the plurality of metal strips that allows light to pass therethrough.
- Embodiments of the present invention also provide a transparent display device including the display substrate.
- Figure 1 is a schematic diagram showing the characteristics of a band pass filter
- FIG. 2 is a schematic structural diagram of a display substrate according to an embodiment of the present invention.
- 3a-3e are flowcharts showing preparation of a display substrate according to an embodiment of the present invention.
- 4a-4c are flow charts of preparing a passivation layer according to an embodiment of the present invention.
- a band pass filter can have two configurations, one being a pass band of a band pass filter formed by an overlapping pass band of a long pass film system and a short pass film system.
- the spectral characteristics obtained by this structure are: a wide cutoff band and a deeper cutoff can be obtained, but a narrow pass band is not easily obtained, so it is often used to obtain a broadband pass filter.
- the second type is a filter film system formed by a Fabry-Perot interferometer.
- the spectral characteristics obtained by this structure are: a narrow pass band can be obtained, but the cut-off band width is usually narrow.
- the cutoff is not deep, so in most cases, it is necessary to use a cut-off filter to widen the cut-off band and increase the cut-off depth. Therefore, the light transmittance of the provided band pass filter is low, and the display is transparent.
- the addition of filters in the device causes the structure of the entire display device to be complicated, requiring more fabrication processes and affecting the fabrication efficiency of the display device.
- the embodiment of the present invention provides a display substrate, a preparation method thereof, and a transparent display device.
- different The passivation layer effects filtering, and the light passes through the gap between the second metal layers, thereby improving the light transmittance of the display substrate.
- Figure 1 shows the main parameters characterizing the characteristics of the filter:
- T max the transmittance of the central wavelength, that is, the peak transmittance
- the 2 ⁇ -transmittance is a half-width of the reduced transmittance, that is, a half-width, or a relative half-width by 2 ⁇ / ⁇ 0 .
- FIG. 2 is a schematic structural view of a display substrate according to an embodiment of the present invention
- FIG. 4c is a schematic structural view of the passivation layer 5 after formation.
- Embodiments of the present invention provide a display substrate including: a substrate, and a plurality of pixel regions, each of the pixel regions including a plurality of sub-pixel regions.
- the first metal layer, the passivation layer, and the second metal layer are sequentially disposed on the substrate and located in the sub-pixel region.
- the first metal layer and the second metal layer are both semi-transflective metal layers, and the thickness of the passivation layer of the plurality of sub-pixel regions located in the same pixel region is different.
- the first metal layer, the passivation layer, and the second metal layer constitute a Faber cavity.
- the Faber cavity allows light of different wavelengths to pass according to the thickness of the passivation layer.
- the Faber cavity is formed by using the first metal layer 3, the second metal layer 4 and the passivation layer 5 of different thicknesses, and the Faber cavity can allow different wavelengths of light according to the thickness of the passivation layer 5.
- the display device can realize different light passages by directly using the structure on the display substrate without using a color filter, thereby reducing the structure of the display device and enabling transparent display.
- each pixel region is selected to include three sub-pixel regions, and the passivation layers corresponding to the three sub-pixel regions respectively have a first thickness, a second thickness, and a third thickness, and the corresponding one of the first thickness passivation layer
- the pixel area allows red light to pass through
- the sub-pixel area corresponding to the second thickness passivation layer allows green light to pass through
- the sub-pixel area corresponding to the third thickness passivation layer allows blue light to pass through.
- the non-display area of the display substrate provided by the embodiment further includes a thin film transistor 2 including: a gate electrode 21; a gate insulating layer 22 disposed on the gate electrode 21; An active layer 23 on the gate insulating layer 22; a source 24 and a drain 25 disposed on the active layer 23. There is a channel between the source 24 and the drain 25.
- the first metal layer 3 is disposed in the same layer as the drain electrode 25, and the passivation layer 5 covers the source electrode 24 and the drain electrode 25.
- the principle of the display substrate provided by the embodiment of the present invention is based on the working principle of the Faber cavity, which is formed by two metal layers and a dielectric layer disposed between the two metal layers.
- the two metal layers provide a transflective function.
- the transmittance of the Faber cavity can be changed by setting the phase thickness of the dielectric layer after the metal layer is determined, thereby changing the transmittance of the light which is allowed to pass, thereby making the white light
- the light that passes through the Faber's cavity changes color.
- the display substrate provided by the present embodiment passes through the first metal layer 3 and the second metal layer 4 as a metal layer, and the passivation layer 5 serves as a dielectric layer, thereby forming the first metal layer 3 in the pixel region of the display substrate.
- the passivation layer 5 and the second metal layer 4 form a Faber cavity structure.
- the display substrate can be selectively transmitted.
- the passivation layer 5 is formed with a passivation layer 51 of a first thickness, a passivation layer 52 of a second thickness, and a passivation layer 53 of a third thickness to form passivation layers of different thicknesses.
- the passivation layer 5 of three thicknesses forms a Faber cavity with the corresponding first metal layer 3 and second metal layer 4, and enables the formed Faber cavity to allow light of three wavelengths of red, green and blue to pass, thereby enabling display
- the substrate has a selective light transmission.
- the material of the passivation layer 5 may be any one of MgF 2 , SiO 2 , Si 3 N 4 , TiO 2 , or the like.
- the passivation layer 5 is a passivation layer 5 made of a Si 3 N 4 material; and when three different thicknesses of the passivation layer 5 are formed, three different thicknesses of the passivation layer 5 are disposed at different positions, and The passivation layers 5 of three different thicknesses respectively correspond to a red sub-pixel, a blue sub-pixel, and a green sub-pixel.
- the first metal layer 3 and the second metal layer 4 provided in this embodiment have a transflective function, and the first metal layer 3 and the second metal layer 4 can be disposed with different metals to have the above functions, for example,
- the first metal layer 3 and the second metal layer 4 may each be formed of a silver material, and the first metal layer 3 and the second metal layer 4 are formed to have a thickness of 35 to 45 nm, such as 35 nm, 38 nm, 40 nm, and 42 nm. 45nm. Thereby, it is ensured that the first metal layer 3 and the second metal layer 4 can have better light transmittance.
- the second metal layer 4 includes a plurality of spaced metal strips with a gap between the plurality of metal strips. That is, the second metal layer 4 is arranged at intervals, and there is a gap between the adjacent metal strips. In use, due to the lack of the second metal layer 4, the gap between the metal strips corresponds to the passivation layer 5 and the first metal. The layer 3 cannot form a Faber cavity, and therefore, the first metal layer 3 and the passivation layer 5 corresponding to the gap have no filtering action, and the light emitted from the gap is white light.
- the light reflected from the second metal layer 4 propagates to the position of the gap in the passivation layer 5, and is emitted from the gap, thereby improving the light. Utilization, and increased transmittance of the entire transparent display device.
- the display substrate provided in this embodiment forms a Fabry cavity by using the first metal layer 3, the second metal layer 4, and the passivation layer 5 of different thicknesses, thereby achieving a narrow color gamut.
- the light transmittance of the entire transparent display device is effectively improved.
- the embodiment of the invention further provides a method for preparing a display substrate, the method comprising the following steps:
- the method for preparing a display substrate provided by the embodiment of the invention enables the display substrate prepared by the method to allow light of different colors to pass.
- the structure will be described in detail below with reference to the accompanying drawings and specific embodiments.
- Step S1 as shown in FIGS. 3a and 3b, a thin film transistor 2 is formed on the substrate 1.
- a gate 21 is first formed on the substrate 1; then, as shown in FIG. 3b, A gate insulating layer 22 is formed on the gate electrode 21, an active layer 23 is formed on the gate insulating layer 22, and a source electrode 24 and a drain electrode 25 are formed on the active layer 23.
- Step S2 as shown in FIG. 3c, a first metal layer 3 is formed on the substrate at a position of the pixel region.
- a first metal layer 3 is formed on the thin film transistor 2 by an etching process.
- the first metal layer 3 may be made of a silver material and has a thickness of, for example, 40 nm.
- Step S3 as shown in FIG. 3d, forming a passivation layer on the first metal layer, and different thicknesses of the passivation layers of the plurality of sub-pixel regions located in the same pixel region.
- the passivation layer 5 is formed to include a passivation layer 51 of a first thickness, a passivation layer 52 of a second thickness, and a passivation layer 53 of a third thickness.
- a passivation layer 51 of a first thickness of thickness d1 is deposited using a mask 6 in a first position, deposition time t1.
- a deposition time t2 As shown in FIG. 4b, in a second position, a deposition time t2, a passivation layer 52 of a second thickness having a thickness d2 is deposited.
- deposition time t3 As shown in FIG. 4c, in a third position, deposition time t3, a third thickness of passivation layer 53 having a thickness of d3 is deposited.
- the deposition speed was made the same, and the thickness of the formed passivation layer was controlled by controlling the deposition time t1, t2, and t3.
- a passivation layer 5 of varying thickness is deposited on the first metal layer 3 by a PECVD process.
- the thickness of the passivation layer corresponding to the three sub-pixels of R, G, and B is different.
- the wavelength corresponding to red light is 760 to 622 nm
- the wavelength corresponding to blue light is 450 to 435 nm
- the wavelength corresponding to green light is 577 to 492 nm.
- d1 180.6 nm.
- the material of the passivation layer 5 may be any one of MgF 2 , SiO 2 , Si 3 N 4 , TiO 2 , or the like.
- the passivation layer 5 is a passivation layer 5 made of a Si 3 N 4 material; and when three different thicknesses of the passivation layer 5 are formed, three different thicknesses of the passivation layer 5 can be disposed at different positions.
- three different thicknesses of the passivation layer 5 correspond to a red sub-pixel, a blue sub-pixel, and a green sub-pixel, respectively.
- Step S4 as shown in FIG. 3e, forming a second metal layer on the passivation layer; and the first metal layer, the passivation layer and the second metal layer constitute a Faber cavity.
- the Faber cavity allows light of different wavelengths to pass according to the thickness of the passivation layer.
- a second metal layer 4 is formed on the formed passivation layer 5, and the formed second metal layer 4 has a gap structure.
- the layer material is available in silver and has a thickness of 40 nm.
- Embodiments of the present invention also provide a transparent display device including the display substrate.
- the Faber cavity is formed by using the first metal layer, the second metal layer and the passivation layers of different thicknesses, and the Faber cavity can allow light of different wavelengths to pass according to the thickness of the passivation layer, thereby
- the display device can realize different light passages by directly using the structure on the display substrate without using a color filter, reducing the structure of the display device, improving the production efficiency, and realizing transparent display.
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Abstract
Description
Claims (13)
- 一种显示基板,包含:基板,多个像素区域,每个所述像素区域包括多个子像素区域,以及依次设置在所述基板上且位于所述子像素区域的第一金属层、钝化层及第二金属层,其中,所述第一金属层及所述第二金属层均为半透半反射的金属层,且位于同一个所述像素区域的多个所述子像素区域的钝化层厚度不同,且所述第一金属层、钝化层及第二金属层构成法珀腔,所述法珀腔根据所述钝化层厚度的不同允许不同波长的光透过。
- 如权利要求1所述的显示基板,其中,每个所述像素区域包括三个子像素区域,对应三个所述子像素区域的钝化层分别具有第一厚度、第二厚度及第三厚度,且所述第一厚度钝化层对应的子像素区域允许红色光透过,所述第二厚度钝化层对应的子像素区域允许绿色光透过,所述第三厚度钝化层对应的子像素区域允许蓝色光透过。
- 如权利要求1或2所述的显示基板,其中,所述钝化层的厚度满足以下公式:d=m*λ/2n;其中,m为奇数,n为钝化层折射率,λ为该厚度的钝化层对应的子像素区域允许通过的光线的波长。
- 如权利要求1-3任一项所述的显示基板,其中,所述第二金属层为银,且所述第二金属层的厚度为35~45nm。
- 如权利要求1-4任一项所述的显示基板,其中,所述钝化层为MgF2、SiO2、Si3N4、TiO2中的任一材料制作的钝化层。
- 如权利要求1-5任一项所述的显示基板,其中,所述第一金属层为银;且所述第一金属层的厚度为35~45nm。
- 如权利要求1-6任一项所述的显示基板,其中,所述第二金属层包括多个间隔设置的金属条,且所述多个金属条之间具有允许光线透过的间隙。
- 一种显示基板的制备方法,包括步骤:提供一基板;在所述基板上的像素区域形成第一金属层;在所述第一金属层上形成钝化层,其中,位于同一个所述像素区域的多个子像素区域的钝化层厚度不同;以及在所述钝化层上形成第二金属层,使所述第一金属层、所述钝化层及所属第二金属层构成法珀腔,所述法珀腔根据所述钝化层厚度的不同允许不同波长的光透过。
- 如权利要求8所述的显示基板的制备方法,其中,所述在第一金属层上形成钝化层,且位于同一个所述像素区域的多个子像素区域的钝化层厚度不同的步骤包括:使用同一张掩膜板在第一位置,沉积时间t1,得到第一厚度的钝化层;在第二位置,沉积时间t2,得到第二厚度的钝化层;以及在第三位置,沉积时间t3,得到第三厚度的钝化层。
- 如权利要求8或9所述的显示基板的制备方法,其中,所述钝化层的厚度满足以下公式:d=m*λ/2n;其中,m为奇数,n为钝化层折射率,λ为该厚度的钝化层对应的子像素区域允许通过的光线的波长。
- 如权利要求8-10任一项所述的显示基板的制备方法,其中,所述钝化层的材料为MgF2、SiO2、Si3N4、TiO2中的任一种。
- 如权利要求8-11任一项所述的显示基板的制备方法,其中,所述第二金属层包括多个间隔设置的金属条,且所述多个金属条之间具有允许光线透过的间隙。
- 一种透明显示装置,包括如权利要求1-7任一项所述的显示基板。
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US15/115,450 US20170261664A1 (en) | 2015-08-21 | 2015-12-11 | Display substrate, manufacture method thereof, and transparent display device |
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CN105070728B (zh) * | 2015-08-21 | 2018-07-10 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、透明显示装置 |
CN106526949B (zh) | 2016-11-15 | 2019-08-27 | 京东方科技集团股份有限公司 | 显示基板及其制造方法 |
CN107274786B (zh) * | 2017-07-06 | 2021-04-06 | 京东方科技集团股份有限公司 | 显示面板、显示装置及显示方法 |
CN107451541B (zh) * | 2017-07-14 | 2020-08-14 | Oppo广东移动通信有限公司 | 滤光膜、虹膜识别模组及电子装置 |
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CN103308486A (zh) * | 2013-05-23 | 2013-09-18 | 中国科学院长春光学精密机械与物理研究所 | 基于表面等离子体的复合谐振腔红外光子吸收器件 |
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2015
- 2015-08-21 CN CN201510520352.4A patent/CN105070728B/zh active Active
- 2015-12-11 WO PCT/CN2015/097099 patent/WO2017031865A1/zh active Application Filing
- 2015-12-11 US US15/115,450 patent/US20170261664A1/en not_active Abandoned
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CN101149512A (zh) * | 2006-09-21 | 2008-03-26 | 胜华科技股份有限公司 | 半透式液晶显示面板与其应用的电子装置 |
CN101551544A (zh) * | 2008-04-03 | 2009-10-07 | 胜华科技股份有限公司 | 具触控功能的彩色滤光片及液晶显示装置 |
CN203259680U (zh) * | 2013-05-15 | 2013-10-30 | 京东方科技集团股份有限公司 | 彩色滤光片及显示装置 |
CN105070728A (zh) * | 2015-08-21 | 2015-11-18 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、透明显示装置 |
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CN105070728B (zh) | 2018-07-10 |
US20170261664A1 (en) | 2017-09-14 |
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