WO2017031779A1 - 阵列基板的制作方法及阵列基板 - Google Patents

阵列基板的制作方法及阵列基板 Download PDF

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Publication number
WO2017031779A1
WO2017031779A1 PCT/CN2015/088961 CN2015088961W WO2017031779A1 WO 2017031779 A1 WO2017031779 A1 WO 2017031779A1 CN 2015088961 W CN2015088961 W CN 2015088961W WO 2017031779 A1 WO2017031779 A1 WO 2017031779A1
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Prior art keywords
color
array substrate
color resist
region
resist
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PCT/CN2015/088961
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English (en)
French (fr)
Inventor
明星
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Wuhan China Star Optoelectronics Technology Co Ltd
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US14/897,656 priority Critical patent/US10571736B2/en
Publication of WO2017031779A1 publication Critical patent/WO2017031779A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor
    • G02F1/0063—Optical properties, e.g. absorption, reflection or birefringence
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133621—Illuminating devices providing coloured light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps

Definitions

  • the invention belongs to the technical field of liquid crystal display, and particularly relates to a method for fabricating an array substrate and an array substrate.
  • RGBW technology adds W pixels (transparent pixels) based on RGB (three-color pixel technology).
  • White light generated by RGB technology realizes white light emission through RGB color mixing, while W pixels in RGBW technology can directly penetrate
  • the white light emitted by the backlight increases the emission rate of white light, that is, increases the brightness of the liquid crystal display panel.
  • the RGBW technology in the prior art is to form four pixels of R, G, B, and W on a color film substrate, and then apply a transparent resin material on the color film substrate as a flat layer, which is a flat layer. It can be used as a protective layer and a flat layer for each pixel, and on the other hand, a transparent material can transmit light passing through the W pixel through the flat layer.
  • a transparent resin material can transmit light passing through the W pixel through the flat layer.
  • the color film substrate is fabricated, it is necessary to separately form the R, G, B, and W pixels, and then the flat layer is separately formed, which is complicated in the production process; in addition, due to the array substrate and the color film.
  • a flat layer is formed on the surface of each color resist of the color filter substrate and the surface of the control electrode of the array substrate, so that a process of two flat layers is required, which increases the array substrate and the color filter substrate. Production process, which reduces production efficiency.
  • the present invention provides a method for fabricating an array substrate and a method The array substrate produced by this method.
  • a method for fabricating an array substrate according to the present invention includes:
  • each of the color resisting regions is a first color resisting region, a second color resisting region, a third color resisting region, and a fourth Color resistance area;
  • a transparent photoresist is coated in the substrate on which the control electrode, the first color resist, the second color resist, the third color resist is formed, and the fourth color resist region to form a flat layer.
  • each of the control electrodes and the respective color resists are formed on the same substrate, and then a transparent photoresist is uniformly applied to each of the control electrodes and the respective color resists and the color resist regions to form a flat layer.
  • the method for fabricating the array substrate of the present invention does not need to form a flat layer on the surface of each color resist of the color filter substrate and the surface of the control electrode of the array substrate, which saves a process of a flat layer, thereby Increased production efficiency.
  • the transparent photoresist is completely coated on the control electrode, the first color resist, the second color resist, the third color resist, and the fourth color resist.
  • the corresponding color resist in the fourth color resist region is not separately formed, that is, the corresponding color resist in the fourth color resist region is directly formed by the transparent photoresist, thereby reducing the process of separately preparing the corresponding color resist.
  • the production efficiency of the array substrate is further improved.
  • the color resist in the fourth color resistive region is formed directly from the planar layer.
  • the solution does not need to separately form the corresponding color resistance in the fourth color resisting region, that is, the color resist in the fourth color resisting region is directly formed by the flat layer, thereby reducing the process of separately forming the color resist in the fourth color resisting region.
  • the first color resist, the second color resist, and the third color resist are red color resist, green color resist, and blue color resist, respectively.
  • the red color resistance, the green color resistance and the blue color resistance can be selected according to the specific light-emitting requirements, for example, the color resistance of a certain color can be transmitted through the corresponding light wavelength range, and the selection can pass through a certain wavelength band.
  • the color resistive material of the light in order to improve the color gamut display, so that the light passes through the respective color resists to form a better picture display.
  • the planar layer is preferably made of a transparent resin material, and may be a transparent positive photoresist material or a transparent negative photoresist material. Further preferably, the thickness thereof is preferably from 1.5 ⁇ m to 5.5 ⁇ m.
  • the flat layer acts to flatten the color resists and the control electrodes, and on the other hand protects them.
  • the following steps are further included after forming the planar layer:
  • a common electrode and a pixel electrode are sequentially formed on the flat layer, and the pixel electrode is connected to the control electrode through the via hole.
  • the formation of the via is used to achieve electrical communication between the control electrode and the pixel electrode to achieve an electronic control function of the array substrate.
  • a method of forming each control electrode includes sequentially forming a gate, a source, and a drain, and a drain connected to the pixel electrode.
  • the drain is in communication with the pixel electrode through a via on the planar layer such that the drain is in electrical communication with the pixel electrode.
  • An array substrate includes: a substrate; a plurality of control electrodes spaced apart on the substrate; a first color resisting region, a second color resisting region, and a third between sequentially adjacent control electrodes a color resisting region and a fourth color resisting region, wherein the first color resisting region, the second color resisting region, and the third color resisting region are respectively provided with a first color resist, a second color resist, and a third color resist; and completely covering the control electrode a flat layer of the first color resist, the second color resist, the third color resist, and the fourth color resistive region.
  • each of the control electrodes and the respective color resists are disposed on the same substrate and are uniformly covered by the flat layer.
  • the respective control electrodes and the respective color resists are respectively disposed on different substrates.
  • the array substrate of the present invention greatly reduces the production cost and improves the production efficiency.
  • the fourth color resistive region in the array substrate of the present invention is completely made of a flat layer, and it is not necessary to separately form a corresponding color resist in the fourth color resistive region, thereby reducing a process for separately producing the corresponding color resist, thereby further Increased production efficiency.
  • the fourth color resistive region disposed on the array substrate of the present invention is used to increase the pixel type in the array substrate, and the color gamut is improved, and the light emission rate is greatly improved, that is, the brightness of the light emitted by the array substrate is increased.
  • the first color resist, the second color resist, and the third color resist are red color resist, blue color resist, and green color resist, respectively.
  • the color resistance in the fourth color resisting region is made of a flat layer. The solution does not need to separately form the color resistance in the fourth color resistive region, thereby simplifying the manufacturing process of the array substrate and improving the production efficiency.
  • the present invention has the following advantages:
  • each color resist and the control electrode are disposed on the same substrate, which greatly reduces the production cost and improves the production efficiency.
  • the alignment accuracy between the conventional array substrate and the color filter substrate is improved, that is, the aperture ratio of the liquid crystal display to which the array substrate is applied is improved;
  • the flat layer completely covers the fourth color resistive region, so that the corresponding color resistance in the fourth color resisting region is directly from the flat
  • the layer is made of tantalum, thereby saving the material for separately producing the corresponding color resistance; at the same time, the transmittance of the light at the fourth color resisting region is also improved, thereby improving the brightness of the light emitted by the array substrate;
  • the manufacturing method of the array substrate of the invention is simpler, the process process is greatly reduced, and the production efficiency is improved.
  • FIG. 1 is a flow chart of a method of fabricating an array substrate according to the present invention
  • FIG. 2 is a schematic view showing formation of respective control electrodes in a method of fabricating an array substrate according to the present invention
  • FIG. 3 is a schematic view showing formation of a first color resist in a method of fabricating an array substrate according to the present invention
  • FIG. 4 is a schematic view showing formation of a second color resist in a method of fabricating an array substrate according to the present invention
  • FIG. 5 is a schematic view showing formation of a third color resist in a method of fabricating an array substrate according to the present invention.
  • FIG. 6 is a schematic view showing formation of a flat layer in a method of fabricating an array substrate according to the present invention.
  • FIG. 7 is a schematic view showing a via hole formed on a flat layer in a method of fabricating an array substrate according to the present invention.
  • FIG. 8 is a schematic view showing formation of a common electrode in a method of fabricating an array substrate according to the present invention.
  • FIG. 9 is a schematic view showing formation of a pixel electrode in a method of fabricating an array substrate according to the present invention.
  • Figure 10 is a schematic structural view of an array substrate according to the present invention.
  • FIG. 1 shows a method for fabricating an array substrate according to the present invention.
  • a-Si FFS Amorphous Silicon Fringe Field Switch
  • Step S100 As shown in FIG. 2, a plurality of control electrodes 11 are formed on the substrate 10 such that a color resistive region is formed between the adjacent two control electrodes 11.
  • the color resist regions are sequentially the first color resist regions 12, Two a color resistive region 13, a third color resisting region 14, and a fourth color resisting region 15;
  • Step S200 forming a first color resist 121 in the first color resisting region 12, forming a second color resist 131 in the second color resisting region 13 and forming a first color resisting region 14 in the first color resisting region 12 in combination with FIG. 3 to FIG.
  • the three color resists 141; the first color resist 121, the second color resist 131, and the third color resist 141 are all formed by exposure, development, and etching through a corresponding mask, and the manufacturing method thereof is the same as that in the prior art. The method is the same and will not be described here.
  • Step S300 in combination with FIG. 6, the transparent photoresist is coated in the substrate 10 and the fourth color resistive region 15 in which the control electrode 11, the first color resist 121, the second color resist 131, and the third color resist 141 are formed.
  • a flat layer 20 is formed.
  • the flat layer 20 is preferably made of a transparent resin material.
  • each control electrode 11 and each color resist are formed on the same substrate 10, and then a transparent photoresist is uniformly applied to each of the control electrodes 11 and the respective color resist and color resist regions to form a flat layer. 20.
  • the method for fabricating the array substrate of the present invention does not need to form a flat layer on the surface of each color resist of the color filter substrate and the surface of the control electrode of the array substrate, which saves a process of a flat layer, thereby Increased production efficiency.
  • the transparent photoresist is completely coated on the control electrode 11, the first color resist 121, the second color resist 131, and the third color resist 141.
  • the fourth color resisting region 15 so that the corresponding color resist in the fourth color resisting region 15 need not be separately formed, that is, the corresponding color resist in the fourth color resisting region is directly formed by the transparent photoresist, thereby reducing a separate fabrication.
  • the process of the corresponding color resistance further improves the production efficiency of the array substrate.
  • the color resistance in the fourth color resistive region 15 is directly formed by the flat layer 20.
  • the solution does not need to separately form the corresponding color resistance in the fourth color resistive region 15, that is, the color resist in the fourth color resistive region 15 is directly formed by the flat layer 20, thereby reducing the color in the fourth color resist region 15 separately. Resistance process.
  • the first color resist 121, the second color resist 131, and the third color resist 141 are red color resist, green color resist, and blue color resist, respectively.
  • the red color resistance, the green color resistance and the blue color resistance can be selected according to the specific light-emitting requirements, for example, the color resistance of a certain color can be transmitted through the corresponding light wavelength range, and the selection can pass through a certain wavelength band.
  • the color resistive material of the light in order to improve the color gamut display, so that the light passes through the respective color resists to form a better picture display.
  • the flat layer 20 may be a transparent positive photoresist material or a transparent negative photoresist material, and its thickness is preferably from 1.5 ⁇ m to 5.5 ⁇ m.
  • the flat layer 20 acts to flatten the color resists and the control electrode 11, and on the other hand protects them.
  • a via 21 is formed on the flat layer 20;
  • the common electrode 30 and the pixel electrode 40 are sequentially formed on the flat layer 20, and the pixel electrode 40 is connected to the control electrode 11 through the via hole 21.
  • the formation of the via 21 is used to achieve electrical conduction between the control electrode 11 and the pixel electrode 40 in order to achieve an electronic control function of the array substrate.
  • the common electrode 30, the insulating layer 31, and the pixel electrode 40 sequentially formed in this step are the same as those in the prior art, and are not described herein again.
  • the step of forming each of the control electrodes 11 includes sequentially forming the gate electrode 111, the source electrode 112, and the drain electrode 113. Firstly, the gate electrode 111 and the gate signal line are formed on the substrate 10, and then an amorphous silicon active layer is formed on the gate electrode 111, and the active layer is formed to form the source electrode 112, the drain electrode 113 and the corresponding signal. Line, these three processes are the same as the existing amorphous silicon process, and will not be described here.
  • the pixel electrode 40 is specifically electrically connected to the drain 113.
  • FIG. 10 shows a schematic structural view of an array substrate 100 provided in accordance with the present invention.
  • the array substrate 100 includes a substrate 10; a plurality of control electrodes 11 spaced apart on the substrate 10; as shown in FIG. 2, the array substrate 100 further includes a first color resistive region 12 between successive adjacent control electrodes 11.
  • the second color resistive region 13, the third color resistive region 14 and the fourth color resistive region 15, the first color resisting region 12, the second color resisting region 13, and the third color resisting region 14 are respectively provided with a first color resist 121.
  • each of the control electrodes 11 and the respective color resists are disposed on the same substrate 10 and uniformly covered by the flat layer 20.
  • the respective control electrodes and the respective color resists are respectively set differently in the prior art. Compared with the substrate, the production cost is greatly reduced and the production efficiency is improved.
  • the fourth color resistive region 15 in the array substrate 100 of the present invention is completely made of the flat layer 20, and it is not necessary to separately form a corresponding color resist, thereby reducing the process of separately producing the corresponding color resist, thereby further improving the production. effectiveness.
  • the fourth color resistive region 15 disposed on the array substrate 100 of the present invention is used to increase the pixel type in the array substrate 100, which greatly increases the light emission rate, that is, increases the brightness of the light emitted by the array substrate 100.
  • the first color resist 121, the second color resist 131, and the third color resist 141 are preferably a red color resist, a blue color resist, and a green color resist, respectively.
  • the color resistance in the fourth color resistive region 15 is made of the flat layer 20. Since the color resist in the fourth color resistive region 15 is not separately formed, the manufacturing process of the array substrate 100 is simplified, and the production efficiency is improved.
  • the array substrate of the present invention includes the respective color resists and the control electrode 11 at the same time, only two processes of the black matrix and the spacer can be completed in the subsequent fabrication of the color filter substrate.
  • a black matrix layer may also be formed on the array substrate 100, as formed after each color resist is formed in step S100. The setting can compensate the alignment error of the array substrate and the color film substrate, and further improve the alignment precision of the array substrate and the color film substrate.
  • the array substrate 100 of the present invention is suitable for use in a variety of display fields and display technologies. It is applicable to the display field of mobile display and large size; it is suitable for product design of LTPS (low temperature polysilicon) and a-Si structure; the invention is also applicable to display structures such as FFS/TN/VA/IPS. In addition, the present invention is also applicable to product design of in cell touch structure and display technology of RGBW.
  • LTPS low temperature polysilicon
  • a-Si structure the invention is also applicable to display structures such as FFS/TN/VA/IPS.
  • the present invention is also applicable to product design of in cell touch structure and display technology of RGBW.

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Abstract

一种阵列基板及其制作方法。制作方法包括在基板（10）上形成多个控制电极（11），以使相邻的两个控制电极（11）之间形成第一色阻区域（12）、第二色阻区域（13）、第三色阻区域（14）和第四色阻区域（15）；依次在第一色阻区域（12）形成第一色阻（121）、在第二色阻区域（13）形成第二色阻（131）、在第三色阻区域（14）形成第三色阻（141）；在形成有控制电极（11）、第一色阻（121）、第二色阻（131）、第三色阻（141）的基板（10）和第四色阻区域（15）内涂布透明光阻以形成平坦层（20）。制作方法进一步提高了阵列基板的生产效率。

Description

阵列基板的制作方法及阵列基板
相关申请的交叉引用
本申请要求享有于2015年8月25日提交的名称为“阵列基板的制作方法及阵列基板”的中国专利申请CN201510524659.1的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明属于液晶显示技术领域，具体涉及一种阵列基板的制作方法以及一种阵列基板。
背景技术
RGBW技术是在RGB(三色型像素技术)的基础上增加了W像素(透明像素)，RGB技术产生的白光是通过RGB的混色来实现白光的出射，而RGBW技术中的W像素可直接透过背光源发出的白光，这便增加了白光的出射率，即增加了液晶显示面板的亮度。
现有技术中的RGBW技术的做法是将R、G、B、W四种像素均形成在彩膜基板上，随后将透明树脂材料涂布在彩膜基板上作为平坦层，该平坦层一方面可作为各像素的保护层以及平坦层，另一方面其透明材料可使经过W像素的光透过该平坦层。然而，由于现有技术中在制作彩膜基板时，需分别制作好R、G、B、W四种像素后才另外形成平坦层，其制作流程较为繁杂；另外，由于在阵列基板与彩膜基板的制作过程中，需分别在彩膜基板的各个色阻的表面以及阵列基板的控制电极的表面形成平坦层，因此需要经过两道平坦层的制程，这便增加了阵列基板与彩膜基板的制作流程，从而降低了生产效率。
针对上述技术存在的问题，在本领域中希望寻求一种阵列基板的制作方法及阵列基板，该阵列基板的制作方法可有效减少其制程，从而大大提高生产效率。
发明内容
本发明根据现有技术的不足之处，提出了一种阵列基板的制作方法以及一种 应用该方法制作的阵列基板。
根据本发明提供的一种阵列基板的制作方法，包括：
在基板上形成多个控制电极，以使相邻的两个控制电极之间形成色阻区域，各色阻区域依次为第一色阻区域、第二色阻区域、第三色阻区域和第四色阻区域；
依次在第一色阻区域形成第一色阻、在第二色阻区域形成第二色阻、在第三色阻区域形成第三色阻；
在形成有控制电极、第一色阻、第二色阻、第三色阻的基板和第四色阻区域内涂布透明光阻以形成平坦层。
本发明的阵列基板的制作方法中，将各个控制电极和各个色阻形成在同一基板上，随后对各个控制电极和各个色阻以及色阻区域统一涂覆透明光阻从而形成平坦层。与现有技术相比，本发明的阵列基板的制作方法无需在彩膜基板的各个色阻的表面以及阵列基板的控制电极的表面分别形成平坦层，这便节省了一道平坦层的制程，从而提高了生产效率。另外，本发明的阵列基板的制作方法中，在形成第三色阻后，将透明光阻完全涂覆在控制电极、第一色阻、第二色阻、第三色阻和第四色阻区域内，从而无需单独形成第四色阻区域内的相应色阻，即第四色阻区域内的相应色阻直接由透明光阻形成，因此又减少了一道单独制作该相应色阻的制程，从而进一步提高了阵列基板的生产效率。
在一些实施方案中，第四色阻区域内的色阻由平坦层直接形成。该方案无需单独形成第四色阻区域内的相应色阻，即第四色阻区域内的色阻直接由平坦层形成，因而减少了一道单独制作第四色阻区域内的色阻的制程。
在一些实施方案中，第一色阻、第二色阻和第三色阻分别为红色色阻、绿色色阻和蓝色色阻。该方案中可根据具体的出光需要对红色色阻、绿色色阻和蓝色色阻进行选材，如在某一颜色的色阻可透过相应的光的波长范围内，选取能够透过某一波段的光的色阻材料，以便提高色域显示，从而使光透过各个色阻后形成更好的画面显示。
在一些实施方案中，平坦层优选采用透明树脂材料制成，可以为透明正性光阻材料或透明负性光阻材料。进一步优选地，其厚度优选为1.5微米至5.5微米。该平坦层一方面对各色阻和控制电极起平坦化的作用，另一方面还对其起到保护作用。
在一些实施方案中，在形成平坦层后还包括以下步骤：
在平坦层上形成过孔；
在平坦层上顺次形成公共电极和像素电极，像素电极通过过孔与控制电极相连。该过孔的形成用于实现控制电极与像素电极的电连通，以便实现阵列基板的电控功能。
在一些实施方案中，形成各控制电极的方法包括依次形成栅极、源极和漏极，并且漏极与像素电极相连。该实施方案中漏极通过平坦层上的过孔与像素电极相连通，以使漏极与像素电极电连通。
根据本发明提供的一种阵列基板，包括：基板；间隔式设置在基板上的多个控制电极；位于顺次相邻控制电极之间的第一色阻区域、第二色阻区域、第三色阻区域和第四色阻区域，第一色阻区域、第二色阻区域、第三色阻区域分别设置有第一色阻、第二色阻和第三色阻；以及完全覆盖控制电极、第一色阻、第二色阻、第三色阻和第四色阻区域的平坦层。
在本发明的阵列基板中，各个控制电极和各个色阻均设置在同一基板上，并被平坦层统一覆盖，与现有技术中将各个控制电极和各个色阻分别设置在不同的基板上相比，本发明的阵列基板大大降低了生产成本，提高了生产效率。另外，本发明的阵列基板中的第四色阻区域完全由平坦层制成，无需单独形成第四色阻区域内相应的色阻，因此减少了一道单独制作该相应色阻的制程，从而进一步提高了生产效率。同时，本发明的阵列基板上设置的第四色阻区域用于增加阵列基板中的像素种类，提高了色域的同时还大大提升了光的出射率，即增加了阵列基板出光的亮度。
在一些实施方案中，第一色阻、第二色阻和第三色阻分别为红色色阻、蓝色色阻和绿色色阻。
在一些实施方案中，第四色阻区域内的色阻由平坦层制成。该方案无需单独形成第四色阻区域内的色阻，从而简化了阵列基板的制作工艺流程，提高了生产效率。
与现有技术相比，本发明具有以下优点：
1)本发明的阵列基板的制作方法中，各色阻和控制电极均设置在同一基板上，大大降低了生产成本，提高了生产效率。同时也改善了传统阵列基板和彩膜基板之间的对组精度，即提高了应用该阵列基板的液晶显示器的开口率；
2)平坦层完全覆盖第四色阻区域，使第四色阻区域内的相应色阻直接由平 坦层制成，从而节省了单独制作该相应色阻的材料；同时也提高了光在第四色阻区域处的透过率，进而提高了阵列基板出光的亮度；
3)本发明的阵列基板的制作方法较现有技术相比，制作流程更为简单，大大减少了工艺制程，提高了生产效率。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1是根据本发明的阵列基板的制作方法的流程图；
图2是根据本发明的阵列基板的制作方法中形成各控制电极的示意图；
图3是根据本发明的阵列基板的制作方法中形成第一色阻的示意图；
图4是根据本发明的阵列基板的制作方法中形成第二色阻的示意图；
图5是根据本发明的阵列基板的制作方法中形成第三色阻的示意图；
图6是根据本发明的阵列基板的制作方法中形成平坦层的示意图；
图7是根据本发明的阵列基板的制作方法中在平坦层上形成过孔的示意图；
图8是根据本发明的阵列基板的制作方法中形成公共电极的示意图；
图9是根据本发明的阵列基板的制作方法中形成像素电极的示意图；
图10是根据本发明的阵列基板的结构示意图；
在附图中，相同的部件使用相同的附图标记，附图并未按照实际的比例绘制。
具体实施方式
下面将结合附图对本发明作进一步说明。
这里所介绍的细节是示例性的，并仅用来对本发明的实施例进行例证性讨论，它们的存在是为了提供被认为是对本发明的原理和概念方面的最有用和最易理解的描述。关于这一点，这里并没有试图对本发明的结构细节作超出于基本理解本发明所需的程度的介绍，本领域的技术人员通过说明书及其附图可以清楚地理解如何在实践中实施本发明的几种形式。
图1显示了根据本发明提供的一种阵列基板的制作方法，这里以a-Si FFS(非晶硅边缘场开关)技术为例作具体阐述。具体包括以下步骤：
步骤S100：结合图2所示，在基板10上形成多个控制电极11，以使相邻的两个控制电极11之间形成色阻区域，各色阻区域依次为第一色阻区域12、第二 色阻区域13、第三色阻区域14和第四色阻区域15；
步骤S200：结合图3至图5所示，依次在第一色阻区域12形成第一色阻121、在第二色阻区域13形成第二色阻131、在第三色阻区域14形成第三色阻141；第一色阻121、第二色阻131和第三色阻141的制作方法均通过相应的光罩进行曝光、显影、蚀刻后得到，其制作方法与现有技术中的制作方法相同，这里不再赘述。
步骤S300：结合图6所示，在形成有控制电极11、第一色阻121、第二色阻131、第三色阻141的基板10和第四色阻区域15内涂布透明光阻以形成平坦层20。平坦层20优选采用透明树脂材料制成。
本发明的阵列基板的制作方法中，将各个控制电极11和各个色阻形成在同一基板10上，随后对各个控制电极11和各个色阻以及色阻区域统一涂覆透明光阻从而形成平坦层20。与现有技术相比，本发明的阵列基板的制作方法无需在彩膜基板的各个色阻的表面以及阵列基板的控制电极的表面分别形成平坦层，这便节省了一道平坦层的制程，从而提高了生产效率。另外，本发明的阵列基板的制作方法中，在形成第三色阻141后，将透明光阻完全涂覆在控制电极11、第一色阻121、第二色阻131、第三色阻141和第四色阻区域15内，从而无需单独形成第四色阻区域15内的相应色阻，即第四色阻区域内的相应色阻直接由透明光阻形成，因此又减少了一道单独制作该相应色阻的制程，从而进一步提高了阵列基板的生产效率。
根据本发明，第四色阻区域15内的色阻由平坦层20直接形成。该方案无需单独形成第四色阻区域15内的相应色阻，即第四色阻区域15内的色阻直接由平坦层20形成，因而减少了一道单独制作第四色阻区域15内的色阻的制程。
优选地，第一色阻121、第二色阻131和第三色阻141分别为红色色阻、绿色色阻和蓝色色阻。该方案中可根据具体的出光需要对红色色阻、绿色色阻和蓝色色阻进行选材，如在某一颜色的色阻可透过相应的光的波长范围内，选取能够透过某一波段的光的色阻材料，以便提高色域显示，从而使光透过各个色阻后形成更好的画面显示。
根据本发明，平坦层20可以为透明正性光阻材料或透明负性光阻材料，其厚度优选为1.5微米至5.5微米。该平坦层20一方面对各色阻和控制电极11起平坦化的作用，另一方面还对其起到保护作用。
根据本发明，如图7至图9所示，在形成平坦层20后还包括以下步骤：
如图7所示，在平坦层20上形成过孔21；
如图8和图9所示，在平坦层20上顺次形成公共电极30和像素电极40，像素电极40通过过孔21与控制电极11相连。该过孔21的形成用于实现控制电极11与像素电极40的电导通，以便实现阵列基板的电控功能。该步骤中顺序形成的公共电极30、绝缘层31以及像素电极40与现有技术中的制程做法相同，这里不再赘述。
此外，根据本发明，如图2所示，形成各控制电极11的步骤包括依次形成栅极111、源极112和漏极113。这里首先包括在基板10上制作出栅极111和栅信号线，其次在栅极111上形成非晶硅有源层，有源层形成后紧接着形成源极112、漏极113和相应的信号线，这三道制程与现有的非晶硅制程相同，这里也不再赘述。其中，像素电极40具体是与漏极113电连接。
图10显示了根据本发明提供的阵列基板100的结构示意图。该阵列基板100包括基板10；间隔式设置在基板10上的多个控制电极11；结合图2所示，阵列基板100还包括位于顺次相邻控制电极11之间的第一色阻区域12、第二色阻区域13、第三色阻区域14和第四色阻区域15，第一色阻区域12、第二色阻区域13、第三色阻区域14分别设置有第一色阻121、第二色阻131和第三色阻141；以及完全覆盖控制电极11、第一色阻121、第二色阻131、第三色阻141和第四色阻区域15的平坦层20。
在本发明的阵列基板100中，各个控制电极11和各个色阻均设置在同一基板10上，并被平坦层20统一覆盖，与现有技术中将各个控制电极和各个色阻分别设置在不同的基板上相比，大大降低了生产成本，提高了生产效率。另外，本发明的阵列基板100中的第四色阻区域15完全由平坦层20制成，无需单独形成相应的色阻，因此减少了一道单独制作该相应色阻的制程，从而进一步提高了生产效率。同时，本发明的阵列基板100上设置的第四色阻区域15用于增加阵列基板100中的像素种类，其大大提升了光的出射率，即增加了阵列基板100出光的亮度。
优选地，第一色阻121、第二色阻131、第三色阻141分别优选为红色色阻、蓝色色阻和绿色色阻。
本发明提供的阵列基板100中，第四色阻区域15内的色阻由平坦层20制成。 由于无需单独形成第四色阻区域15内的色阻，从而简化了阵列基板100的制作工艺流程，提高了生产效率。
可以理解的是，由于本发明的阵列基板同时包括了各个色阻以及控制电极11，因此在后续制作彩膜基板时只需完成黑矩阵和隔离子两道制程即可。优选地，黑矩阵层也可形成在阵列基板100上，如在步骤S100中形成各个色阻后形成。该设置可补偿阵列基板与彩膜基板的对准误差，进一步提高了阵列基板与彩膜基板的对准精度。
本发明的阵列基板100适用于多种显示领域和显示技术。如适用于移动显示领域和大尺寸的显示领域；适用于LTPS(低温多晶硅)以及a-Si结构的产品设计中；本发明还适用于FFS/TN/VA/IPS等显示结构。另外，本发明还可适用于in cell touch(内嵌式触控技术)结构的产品设计以及RGBW的显示技术中。
应注意的是，前面所述的例子仅以解释为目的，而不能认为是限制了本发明。虽然已经根据示例性实施例对本发明进行了描述，然而应当理解，这里使用的是描述性和说明性的语言，而不是限制性的语言。在当前所述的和修改的所附权利要求的范围内，在不脱离本发明的范围和精神的范围中，可以对本发明进行改变。尽管这里已经根据特定的方式、材料和实施例对本发明进行了描述，但本发明并不仅限于这里公开的细节；相反，本发明可扩展到例如在所附权利要求的范围内的所有等同功能的结构、方法和应用。

Claims (16)

  1. 一种阵列基板的制作方法，包括：
    在基板上形成多个控制电极，以使相邻的两个所述控制电极之间形成色阻区域，各所述色阻区域依次为第一色阻区域、第二色阻区域、第三色阻区域和第四色阻区域；
    依次在所述第一色阻区域形成第一色阻、在所述第二色阻区域形成第二色阻、在所述第三色阻区域形成第三色阻；
    在形成有所述控制电极、所述第一色阻、第二色阻、第三色阻的基板和所述第四色阻区域内涂布透明光阻以形成平坦层。
  2. 根据权利要求1所述的阵列基板的制作方法，其中，所述第四色阻区域内的色阻由所述平坦层直接形成。
  3. 根据权利要求1所述的阵列基板的制作方法，其中，所述第一色阻、第二色阻和第三色阻分别为红色色阻、绿色色阻和蓝色色阻。
  4. 根据权利要求2所述的阵列基板的制作方法，其中，所述第一色阻、第二色阻和第三色阻分别为红色色阻、绿色色阻和蓝色色阻。
  5. 根据权利要求1所述的阵列基板的制作方法，其中，所述平坦层由透明树脂材料制成。
  6. 根据权利要求2所述的阵列基板的制作方法，其中，所述平坦层由透明树脂材料制成。
  7. 根据权利要求1所述的阵列基板的制作方法，其中，所述平坦层的厚度为1.5微米至5.5微米。
  8. 根据权利要求2所述的阵列基板的制作方法，其中，所述平坦层的厚度为1.5微米至5.5微米。
  9. 根据权利要求1所述的阵列基板的制作方法，其中，在形成所述平坦层后还包括以下步骤：
    在所述平坦层上形成过孔；
    在所述平坦层上顺次形成公共电极和像素电极，所述像素电极通过所述过孔与所述控制电极相连。
  10. 根据权利要求2所述的阵列基板的制作方法，其中，在形成所述平坦层 后还包括以下步骤：
    在所述平坦层上形成过孔；
    在所述平坦层上顺次形成公共电极和像素电极，所述像素电极通过所述过孔与所述控制电极相连。
  11. 根据权利要求9所述的阵列基板的制作方法，其中，形成各控制电极的方法包括依次形成栅极、源极和漏极，并且所述漏极与所述像素电极相连。
  12. 根据权利要求10所述的阵列基板的制作方法，其中，形成各控制电极的方法包括依次形成栅极、源极和漏极，并且所述漏极与所述像素电极相连。
  13. 一种阵列基板，包括：
    基板，
    间隔式设置在所述基板上的多个控制电极，
    位于顺次相邻所述控制电极之间的第一色阻区域、第二色阻区域、第三色阻区域和第四色阻区域，所述第一色阻区域、第二色阻区域、第三色阻区域分别对应设置有第一色阻、第二色阻和第三色阻，以及
    完全覆盖所述控制电极、所述第一色阻、所述第二色阻、所述第三色阻和所述第四色阻区域的平坦层。
  14. 根据权利要求13所述的阵列基板，其中，所述第一色阻、所述第二色阻和所述第三色阻分别为红色色阻、蓝色色阻和绿色色阻。
  15. 根据权利要求13所述的阵列基板，其中，所述第四色阻区域内的色阻由所述平坦层制成。
  16. 根据权利要求14所述的阵列基板，其中，所述第四色阻区域内的色阻由所述平坦层制成。
PCT/CN2015/088961 2015-08-25 2015-09-06 阵列基板的制作方法及阵列基板 Ceased WO2017031779A1 (zh)

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