WO2017023348A1 - Solutions tolérant l'eau et procédé pour éliminer des saletés polymères et nettoyer des substrats micro-électroniques - Google Patents

Solutions tolérant l'eau et procédé pour éliminer des saletés polymères et nettoyer des substrats micro-électroniques Download PDF

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Publication number
WO2017023348A1
WO2017023348A1 PCT/US2015/060715 US2015060715W WO2017023348A1 WO 2017023348 A1 WO2017023348 A1 WO 2017023348A1 US 2015060715 W US2015060715 W US 2015060715W WO 2017023348 A1 WO2017023348 A1 WO 2017023348A1
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WO
WIPO (PCT)
Prior art keywords
lifter
dissolver
substrate
solution
process according
Prior art date
Application number
PCT/US2015/060715
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English (en)
Inventor
Kyle J. Doyel
Michael L. Bixenman
Haley N. JONES
Kevin Soucy
Jacob Thomas
Original Assignee
Kyzen Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyzen Corporation filed Critical Kyzen Corporation
Publication of WO2017023348A1 publication Critical patent/WO2017023348A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Definitions

  • This invention relates to compositions and process for the removal of polymeric materials and cleaning of soils from integrated circuits (IC), microelectronics,
  • the invention relates to compositions and methods of use of two different cleaning solutions that are used sequentially to effectively remove polymeric soils.
  • soils are found in photoresists, solder masks, anti-reflective coating, fluxes and the like that are used in the manufacturing process.
  • polymeric materials are used to create features and structures on electronic substrates. Most common structures are metallic lines, vias, wafer bumps and wafer balls that are used to interconnect the device.
  • This process it becomes necessary to remove the polymeric material.
  • the problem is during the manufacturing process, conditions are encountered that will make the polymer difficult to remove. Because of the difficulty of the polymer removal corrosion of the metals on the substrate is possible. This possibility is eliminated or, at least, mmimized, by the instant invention.
  • the present invention is based on the use of two solutions called “lifter” and
  • the Lifter comprises:
  • a base preferably selected from one or more: metal hydroxides, non metal ion hydroxides, amines or alkanolamines.
  • the most preferred base is an alkanolamine
  • a corrosion inhibitor preferably selected from azoles, metal silicates, or non metal ion silicates, the most preferred silicate corrosion inhibitor is a sodium metasilicate;
  • the preferred azoic corrosion inhibitors are benzotriazoles, alkyl benzotriazoles, metal ion benzotriazoles or metal ion alkyl benzotriazoles, preferably a benzotriazole or tolyltriazole;
  • solvents - preferred solvents being water soluble solvents
  • other corrosion inhibitors known in the art
  • an acidic buffering agent such as organic or mineral acids.
  • the purpose of the lifter is to lift SO to 99.9% of the polymeric substance from the substrate into the solution as a solid particle without corrosion to the electronic substrate.
  • the lifter is operated at atmospheric pressure and at a temperature of 20-100° C. This is unique since removal techniques generally are designed to dissolve the polymeric substance in order to clean. It is not a requirement of this solution to dissolve but to physically attack the bond of the polymer to the substrate. It is to be understood that the proportions of water discussed herein are for a concentrate that may be diluted by the user.
  • the Dissolver comprises: 1. less than 50% water, the preferred embodiment containing less than 20% water,
  • a base preferably selected from one or more: non metal ion hydroxides, amines or alkanolamines.
  • the most preferred base is tetraalkyl ammonium hydroxide;
  • a corrosion inhibitor preferably selected from azoles, non metal ion silicates, the preferred corrosion inhibitor tetramethylammonium silicate, or benzotriazoles, and alkyl benzotriazoles, the preferred being benzotriazole and tolyltriazole;
  • Solvents - preferred solvents being water-soluble solvents, b. other corrosion inhibitors known in the art,
  • Dissolver e. an acidic buffering agent such as organic or mineral acids.
  • the purpose of the Dissolver is to operate at 20-100 degrees C at atmospheric pressure and dissolve 100% of the polymeric substance remaining after treatment with the lifter from the substrate into the solution without corrosion from the lifter step.
  • Unique to the process is the ability for the dissolver to be water tolerant in that the addition of water from the lifter and other sources does not cause corrosion or hinder cleaning.
  • the process as we describe later requires that the part will be taken from the lifter stage and directly immersed into the dissolver stage.
  • a requirement of the dissolver is that it is able to handle the drag out from the lifter stage without causing corrosion to the substrate or a loss of cleaning ability.
  • the lifter is designed to contain a high amount of water and the dissolver must tolerate this condition.
  • the invention relates to cleaning off processing residues, namely photoresist (PR) and flux residues from all manner of microelectronics, again collectively "substrate”.
  • PR photoresist
  • this process is aimed at removing photoresist from copper pillar bumped die (Cu pillar) although it may be used to remove other materials from other packaging types.
  • photoresist which is a polymeric material
  • Photoresist is used in the fabrication of features on the surface of the substrate but is not desirable on the final product
  • the photoresist comes in two types, positive and negative.
  • the process of this invention may be applied to either type but is specifically designed to solve particular issues with the increasingly popular type of negative type photoresist Negative photoresist is more commonly being supplied as a "dry film" which is in essence a sheet of negative photoresist polymer which is pressed onto the substrate.
  • the typical photolithography process ensues and layers of metals are deposited onto the substrate. Upon the completion of this process the photoresist must be removed for subsequent operations such as packaging.
  • the dissolver is a cleaning agent that is formulated to remove the photoresist via dissolution.
  • Dissolvers are organic solvents or blends of organic solvents unless otherwise specified. Dissolvers contain solvents, surfactants, buffers, corrosion inhibition agents, and other materials as determined by those skilled in die art. They are typically designed to work with specific types of photoresist however they may be formulated to have a more broad spectrum. Dissolvers remove the photoresist by chemically dissolving the photoresist into solution. Typically the resulting photoresist and dissolver solution is homogeneous.
  • Dissolvers are typically heated and agitated during cleaning to speed up the dissolution of photoresist. While it would seem that dissolvers would solve the problem of removing photoresist they do not and have several shortcomings. Typically the cost of a dissolver is higher than that of a lifter due to the solvent content. Furthermore, the solubility of the photoresist in the dissolver tends to be low necessitating a larger quantity of dissolver to hold a given amount of photoresist As it dissolves the photoresist at some point the dissolver will become saturated with photoresist and will cease to clean. At that point the dissolver will have to be disposed of, which on account of it being a solvent based liquid will necessitate significant disposal costs.
  • Dissolvers also are not tolerant of water being introduced into them. When water is introduced to dissolvers it causes the metals on the substrate to corrode rapidly. In addition water when introduced to dissolvers can cause a heterogeneous solution to form or for components of the dissolver or other dissolved materials to precipitate out, all leading to impaired cleaning performance.
  • Key to this invention is the formulation of dissolvers that are water tolerant Typically dissolvers of the invention will still function at water concentrations of up to 30% and can be improved upon further.
  • lifter refers to a cleaning composition that does not chemically dissolve the photoresist but instead accomplishes photoresist removal primarily through physical removal. This is a more common cleaning agent than dissolvers as the lifter can be easily separated from the photoresist that it has removed.
  • the lifter serves to disrupt the chemical bonds between the photoresist and the substrate. This causes the photoresist to swell while weakening the interaction between the photoresist and substrate and enhancing the interaction between the lifter and the photoresist
  • the photoresist is removed as large flakes as these may be filtered out of the lifter to enhance the longevity of the lifter and improve the economics of the process.
  • a novel composition in conjunction with the lifter.
  • a novel composition called a "protector" in conjunction with the lifter.
  • One possible shortcoming of the aqueous based lifter is that while the photoresist can be filtered out of the lifter allowing it to be used almost indefinitely ignoring the losses of volume caused by evaporation or lifter entrapment on the substrate, the corrosion inhibiting agents are removed through adsorption onto the exposed metal surfaces which limits the useful life of the lifter. Corrosion inhibitors form essentially molecular monolayers on the surface of the exposed metals. The exact mechanism and resulting structure varies based on the specific corrosion inhibitor as well as the metal.
  • the protector allows for enhanced longevity. It is this addition of corrosion inhibition and the water tolerant dissolver which enable this novel process to be effective.
  • the protector may also optionally be used in conjunction with the dissolver.
  • a flow diagram of the process of the invention is shown in the sole figure.
  • the present invention is a dual chemistry process.
  • the key improvement upon such a process by the present invention is the use of a novel dissolver which is water tolerant negating the need for intermediate rinses.
  • First the path of the substrate will be described and then particulars of each step will be discussed.
  • the substrate covered in photoresist enters the process and goes into stage 1 which is filled with the aqueous lifter.
  • the aqueous lifter is maintained at a temperature and concentration suitable to remove the majority of the photoresist from the substrate with no corrosion.
  • the substrate is contacted with the aqueous lifter for a duration that affords a high throughput with maximal cleaning.
  • the substrate is moved into the next step.
  • the substrate will have preferably greater than around 90% of the photoresist removed.
  • the next step in the preferred embodiment of the invention is stage 2 with the water tolerant organic dissolver.
  • the next step could be a rinse or series of rinses with water or other fluids. While the intent of the process is to eliminate this step it may under very select circumstances be beneficial as determined by those of ordinary skill in the art
  • the present process adds the protector as well as the composition of the organic dissolver.
  • the substrate contacted with the water tolerant organic dissolver. This organic dissolver is of a novel water tolerant formulation.
  • the dissolver is preferably heated as well as agitated, both of which increase the dissolution rate of the photoresist
  • the substrate is cleaned in stage 2 for a time that has been determined to dissolve all remaining traces of photoresist from the substrate and not cause undue corrosion.
  • the substrate is then rinsed with DI water.
  • DI water In the preferred embodiment of the process there would only be one rinse of DI water.
  • this rinse could involve fluids other than water or a series of several different rinses in one or more different fluids.
  • Upon the completion of the rinse die substrate is dried and is found to be free of photoresist and cleaning fluids with no corrosion.
  • aqueous lifter at a desired concentration, typically in the 15-30% lifter concentrate by weight in water but may be used from 1-99% by weight in water.
  • the lifter is usually heated to a desired temperature, typically between 30°C and 100°C. The exact temperature is determined by one skilled in the art
  • One of the defining features of the invention is the use of the protector in stage 1. As noted above the corrosion inhibitors become depleted in the lifter due to their adsorption onto the metal of the substrate, which is the desired effect of corrosion inhibitors. Hie inventive process reduces the need to discard and replace the lifter and can even eliminate that need entirely by adding a protector to stage
  • the protector comprises a corrosion inhibitor dissolved in an appropriate solvent. This fluid serves to replace the lost corrosion inhibitor thereby extending the useful life of the lifter resulting in a more cost effective process.
  • the additions of protector are determined by a control system.
  • the control system may be automatic, semiautomatic, or manually controlled by an operator.
  • the control system may also handle other aspects of the cleaning process or may be dedicated to detenm ning when to add the protector and how much to add to stage 1. The other aspects of the control system will be discussed
  • control system is consolidated as subsystems in one computer controlled system however, it is not a requirement
  • the simplest control system and one that is not preferred but acceptable would be for an operator of the cleaning process to observe cleaned substrates for corrosion and upon noticing corrosion and manually add the protector to stage 1.
  • a slightly more preferred implementation would be a control system that adds the protector at a periodic interval determined by the operator.
  • the control system in stage 1 will add additional lifter to account for the lost volume carried out by evaporation or the substrate to maintain a certain lifter concentration, more details on that later, and at the same time add the protector as a fixed percentage of the added lifter.
  • an operator or a dosing system adds lifter to the process to maintain the volume and
  • the concentration of the corrosion inhibitor contained in both the protector and the lifter is determined analytically either by an operator or an online analytical technique. This concentration would then be used to determine the exact amount of protector that needed to be added. This would minimize the waste of process.
  • These appropriate additions of protector can allow the contents of stage 1 to never have to be discarded. In the event mat it does not completely eliminate the need to completely replace the contents of stage 1 it has been found to substantially extend the life of the lifter.
  • benzotriazole as a key corrosion inhibitor in the lifter formulation.
  • concentration of benzotriazole may be manually determined by commercially available test kits. Using these test kits an operator will check the concentration of benzotriazole in stage 1 and add the protector as necessary to keep the triazole in the required range.
  • control system adds the appropriate amount of concentrated lifter and water.
  • the simplest implementation of this control system is one that automatically will add a fixed ratio of lifter concentrate and water when a float switch is tripped. As noted above, this control system could also add the required amount of protector.
  • the control system continuously monitors the concentration of the aqueous lifter by one or more methods and adds concentrated lifter and water as required.
  • the control system monitors both the corrosion inhibitor concentration as well as the general concentration of the lifter in real time and adds the appropriate amount of protector, water, or concentrated lifter.
  • the exact method of determining the concentration of the lifter is left to those skilled in the art.
  • Non-limiting examples of methods of determining the concentration of the lifter are: conductivity, pH, titration, gas chromatography, sonic velocity, high performance liquid chromatography, spectroscopy, fluorescence, nonvolatile residue, density, refractive index, differential density, or other methods known to those skilled in the art
  • the aqueous lifter may contain a beneficial or inert chemical that is easily detected by a convenient analytical method for the purpose of concentration determination, which serves as a tracer component
  • control system can remove portions of the aqueous lifter from stage 1 and filter out the photoresist from the solution and returning the purified lifter back to stage 1.
  • No specific filtration mechanism is preferred although one skilled in the art can select a batch or online filtration system that is optimized for removing the photoresist
  • control system can alert operators to empty the solid waste filtrate.
  • Stage 2 contains the water tolerant organic dissolver of the invention.
  • This stage is typically heated with the preferred temperature of around 70°C.
  • the heating of the dissolver is useful for improving the dissolution rate and the amount of photoresist that the dissolver can hold. Due to evaporative losses and drag out losses the volume of dissolver in this step will decrease over time.
  • a control system may be used to automatically add dissolver to replenish the lost amount
  • the dissolver may be supplied as a ready to use formulation or as a concentrate that is diluted with a certain solvent or blend of solvents. As the dissolver is water tolerant it can accept a relatively large quantity of water before its performance is degraded. Typically this value is up to, but not limited to, 30% by weight water.
  • the process control system can monitor the water concentration in stage 2 and automatically replace the dissolver once the water content reaches a certain level.
  • this removed dissolver can have the water extracted or separated from it by any number of means and reused.
  • One skilled in the art may find it advantageous to remove the water from the dissolver via decanting, distillation, molecular sieves, or any number of commonly available techniques.
  • Wafers had either a high lead solder alloy or a lead free solder alloy, allowing for evaluation on corrosion of a wide range of process materials
  • the lifter was formulated according to Table 1. The lifter was then diluted to a concentration of 25% with the balance being DI water and heated to 70°C. Examples of all wafer types tested were individually submerged in the lifter with agitation for 30 minutes. Upon removal the wafers were inspected and determined to have the majority, >90% of the photoresist removed from the substrate. A total of 250 wafers were cleaned in the lifter before the test ended, with no degradation of cleaning abilities or corrosion inhibition observed with the lifter. Due to the elevated temperatures and entrapment of lifter on the substrates the volume of the aqueous lifter would decrease. Additional lifter, diluted to 25% with the balance being DI water was added when needed.
  • a protector with the formulation of Table 2 was added at a rate of 2.5% of the lifter. This maintained corrosion inhibition for the duration of the test and limited the additions of lifter to only what was required to maintain the system volume and not for cleaning or corrosion performance issues.
  • the aqueous lifter was filtered of the photoresist. Without rinsing the wafers were then placed in contact with the neat dissolver composition disclosed in Table 3. This dissolver was heated to 70°C and was agitated to provide fluid flow. After 30 minutes in the dissolvcr the wafers were removed and rinsed with DI water. The wafers were found to have virtually all photoresist removed with no corrosion evident under high magnification.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

L'invention concerne des compositions et un procédé permettant l'élimination de matières polymères et le nettoyage de saletés à partir d'éléments électroniques pendant la fabrication. Deux solutions de nettoyage différentes sont utilisées séquentiellement pour éliminer efficacement des saletés polymères. Les deux solutions de nettoyage sont appelées "désincrusteur" et "dissolveur". Le but du désincrusteur est de déloger 50 à 99,9 % de la substance polymère à partir du substrat dans la solution sous forme de particule solide sans corrosion du substrat électronique. Le but du dissolveur est de dissoudre la substance polymère restant après traitement avec le désincrusteur à partir du substrat dans la solution sans corrosion à partir de l'étape de désincrustation. La caractéristique unique du procédé est la capacité du dissolveur à être tolérant à l'eau, en ce que l'ajout d'eau à partir du désincrusteur et d'autres sources ne provoque pas de corrosion ou n'empêche pas le nettoyage.
PCT/US2015/060715 2015-08-06 2015-11-13 Solutions tolérant l'eau et procédé pour éliminer des saletés polymères et nettoyer des substrats micro-électroniques WO2017023348A1 (fr)

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US201562201683P 2015-08-06 2015-08-06
US62/201,683 2015-08-06

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022159273A1 (fr) * 2021-01-22 2022-07-28 Eci Technology, Inc. Surveillance sélective de produits chimiques de base

Citations (11)

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US20020134963A1 (en) * 1998-07-06 2002-09-26 Ekc Technology, Inc. Post etch cleaning composition for dual damascene system
US20050115671A1 (en) * 2003-12-02 2005-06-02 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus and substrate treating method
US20050266683A1 (en) * 1998-07-06 2005-12-01 Lee Wai M Remover compositions for dual damascene system
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
WO2009073588A1 (fr) * 2007-12-06 2009-06-11 Mallinckrodt Baker, Inc. Décapant pour photorésine contenant un fluorure ou compositions de nettoyage pour élimination de résidus contenant un matériau conjugué oligomère ou polymère d'un composé alpha-hydroxycarbonyl/amine ou une réaction ammonium
US20100056410A1 (en) * 2006-09-25 2010-03-04 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
US20100242998A1 (en) * 2009-03-27 2010-09-30 Eastman Chemical Company Compositions and methods for removing organic substances
US20100317559A1 (en) * 2009-06-15 2010-12-16 Robert J. Ryther High alkaline cleaners, cleaning systems and methods of use for cleaning zero trans fat soils
US20120283163A1 (en) * 2008-10-21 2012-11-08 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US20130273479A9 (en) * 2009-03-27 2013-10-17 Eastman Chemical Company Processess and compositions for removing substances from substrates

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020134963A1 (en) * 1998-07-06 2002-09-26 Ekc Technology, Inc. Post etch cleaning composition for dual damascene system
US20050266683A1 (en) * 1998-07-06 2005-12-01 Lee Wai M Remover compositions for dual damascene system
US20050115671A1 (en) * 2003-12-02 2005-06-02 Dainippon Screen Mfg. Co., Ltd. Substrate treating apparatus and substrate treating method
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
US20100056410A1 (en) * 2006-09-25 2010-03-04 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
US20100112728A1 (en) * 2007-03-31 2010-05-06 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation
WO2009073588A1 (fr) * 2007-12-06 2009-06-11 Mallinckrodt Baker, Inc. Décapant pour photorésine contenant un fluorure ou compositions de nettoyage pour élimination de résidus contenant un matériau conjugué oligomère ou polymère d'un composé alpha-hydroxycarbonyl/amine ou une réaction ammonium
US20120283163A1 (en) * 2008-10-21 2012-11-08 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US20100242998A1 (en) * 2009-03-27 2010-09-30 Eastman Chemical Company Compositions and methods for removing organic substances
US20130273479A9 (en) * 2009-03-27 2013-10-17 Eastman Chemical Company Processess and compositions for removing substances from substrates
US20100317559A1 (en) * 2009-06-15 2010-12-16 Robert J. Ryther High alkaline cleaners, cleaning systems and methods of use for cleaning zero trans fat soils

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022159273A1 (fr) * 2021-01-22 2022-07-28 Eci Technology, Inc. Surveillance sélective de produits chimiques de base

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