WO2017018265A1 - Sealing film formation device and sealing film formation method - Google Patents

Sealing film formation device and sealing film formation method Download PDF

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Publication number
WO2017018265A1
WO2017018265A1 PCT/JP2016/071098 JP2016071098W WO2017018265A1 WO 2017018265 A1 WO2017018265 A1 WO 2017018265A1 JP 2016071098 W JP2016071098 W JP 2016071098W WO 2017018265 A1 WO2017018265 A1 WO 2017018265A1
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sealing film
substrate
chamber
cover
vacuum
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PCT/JP2016/071098
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French (fr)
Japanese (ja)
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雅充 山下
和徳 中北
清人 山本
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東レエンジニアリング株式会社
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Abstract

Provided are a sealing film formation device and sealing film formation method that make it possible to stably form a sealing film having high barrier properties. Specifically, the present invention is provided with: a first decompression chamber 4 for accommodating a substrate W; a cover film formation unit 2 for supplying a cover film material by a wet process to the substrate W accommodated within the first decompression chamber 4, to form a cover film 93; a second decompression chamber 5 for accommodating the substrate W; a decompression conveyance path 6, which is a conveyance path for the substrate W from the first decompression chamber 4 to the second decompression chamber 5, and which is decompressed; and a sealing film formation unit 3 for forming a sealing film 90 by supplying a sealing film material by a dry process to the cover film 93 formed on the substrate W accommodated in the second decompression chamber 5.

Description

Sealing film forming apparatus and a sealing film forming method

This invention relates to a sealing film forming apparatus and a sealing film forming method for forming the object of the sealing film to prevent infiltration of moisture.

Such as an organic EL or a thin film solar cell, in the manufacture of sensitive electronic devices to moisture, it is necessary to seal the device to moisture to the device does not enter. Conventionally, had sealed the device by using a high glass or barrier film, in order to thinner lighter products, in recent years, high barrier property by a dry process such as a CVD method film (sealing by forming a film) on the device surface, the means for protecting the electronic device from the outside air is being employed.

However, the sealing film from such a case for protecting a sealing film, thereon when the foreign object 91 such as a step on generation to cause the particles as shown in FIG. 5 is attached on the electronic device (substrate W) When thus form a 90, easily interrupted sealing film 90 is at a site where there is a steep recess, such as a sealing film material does not Mawarikome as site 92, the deterioration of the electronic device moisture therefrom intrudes there is a possibility that may occur. In other words, the barrier properties of the sealing film was likely to be low.

Therefore, for example, in Patent Document 1, as electrospray method shown in FIG. 6, to fill the foreign substance 91 in the cover film 93 to form a cover film 93 having fluidity onto the surface of the substrate W by a wet process such as an inkjet method from the surface of the cover film 93 to form a sealing film 90 it has been proposed. Thus, it is possible to form a sealing film 90 on the smooth surface of the cover film 93 can be interrupted obtain without a high barrier property sealing film 90.

Japanese Patent Application No. 2014-105566 Patent Publication No.

However, that's method for forming the sealing film described in Patent Document 1, still barrier properties of the sealing film there is a risk that may be low. Specifically, since a large air flow the substrates near conveys the substrate to a dry process apparatus for forming a sealing film by a dry process after forming the cover film when the vacuum is generated, the cover film there is a possibility that foreign substances such as particles are attached to. As a result, the sealing film 90 as shown in FIG. 7 is interrupted in the vicinity of the foreign matter 94 is produced, the barrier property was likely to be low.

The present invention has been made in consideration of the above situation, and its object is to provide a sealing film forming apparatus and a sealing film forming method capable of stably forming a high barrier sealing film.

Sealing film forming apparatus of the present invention in order to solve the above problems, a first decompression chamber for accommodating the substrate, the cover film material by the first pressure reducing wet process to the contained substrates in the chamber supplied, and a cover film forming unit for forming a cover layer, a transport path of the second decompression chamber and the substrate from the first vacuum chamber to the second pressure reduction chamber containing the substrate, vacuum sealing film formation is as a vacuum conveying path, to feed the sealing material by a dry process to the second pressure reducing the formed on the contained substrates in the chamber cover film to form a sealing film It is characterized in that it comprises a part, a.

According to the sealing film forming apparatus, it is possible to stably form a high barrier sealing film. Specifically, a first vacuum chamber, by having vacuum conveying path, and a second vacuum chamber, constantly from the cover film is formed to a sealing film on the surface of the cover film is formed it is possible to maintain the reduced pressure environment, it is possible to prevent foreign matter from adhering to the surface of the cover film, not I Kana cover film surface having a high barrier property sealing film can be stably formed.

Further, the cover membrane material, may is a liquid solventless system.

By doing so, it is possible to prevent the solvent in cover film when performing a wet process in a reduced pressure environment will be cured before application completion volatilized.

Further, the cover membrane material, may is thermosetting or UV-curable or water-curable liquid.

By doing so, it is possible to easily cure the cover film is also in a reduced pressure environment.

Further, the cover film forming portion is electrospray apparatus, the pressure of the cover layer material supply said first vacuum chamber during the good or less 0.2 Pa.

By doing so, even in the reduced pressure environment prevents the abnormal discharge occurs between the first vacuum chamber and between the electrospray device and the nozzle and the stage, it is possible to form a stable cover film.

Further, the sealing film forming method of the present invention, by a wet process in a reduced pressure environment to a first vacuum contained substrates in the chamber by supplying the cover film material, a cover film in order to solve the above problems a cover film forming step of, formed in vacuum conveying step and a substrate housed in the second vacuum chamber for transporting the substrate in a reduced pressure environment from the first vacuum chamber to the second decompression chamber and to the cover film and supplies sealing material by a dry process in a reduced pressure environment it is characterized by having a sealing film forming step of forming a sealing film, the.

According to the sealing film forming method, it is possible to stably form a high barrier sealing film. Specifically, the cover film forming process, vacuum transfer step, and by having a sealing film forming step, always pressure environment since the cover film is formed to a sealing film on the surface of the cover film is formed it is possible to maintain, it is possible to prevent foreign matter from adhering to the surface of the cover film, a high barrier property sealing film on a gentle cover film surface can be stably formed.

According to the sealing film forming apparatus and a sealing film forming method of the present invention, it is possible to stably form a high barrier sealing film.

It is a schematic view showing a sealing film forming apparatus according to an embodiment of the present invention. It is a flow diagram illustrating a sealing film forming method in an embodiment of the present invention. It is a graph showing the relationship between the vacuum chamber pressure and discharge voltage in the electrospray coating. It is a schematic view showing a sealing film forming apparatus according to another embodiment. The conventional sealing film forming method is a schematic view showing a sealing film formed on the substrate. The sealing film forming method of the present invention is a schematic diagram showing a sealing film formed on the substrate. The conventional sealing film forming method is a schematic view showing a sealing film formed on the substrate.

The embodiments according to the present invention will be described with reference to the drawings.

Figure 1 is a schematic view showing a sealing film forming apparatus according to an embodiment of the present invention, a cross-sectional view.

Sealing film forming apparatus 1 has a cover film forming portion 2 and the sealing film forming unit 3, and a cover film 93 on the surface of the substrate W by the cover film forming unit 2, the surface of the cover film 93 forming the sealing film 90 by the sealing film forming unit 3.

Further, the cover film-forming portion 2 is accommodated in a first vacuum chamber 4, the cover film 93 is formed in a reduced pressure environment. Further, the sealing film forming unit 3 is accommodated in the second decompression chamber 5, the sealing film 90 is formed in a reduced pressure environment.

Further, the first decompression chamber 4 and the second vacuum chamber 5, is connected from the first vacuum chamber 4 via the vacuum transport path 6 is a conveyance path of the substrate W to the second decompression chamber 5 and which, by the internal vacuum conveying path 6 is depressurized, it is possible to form the cover film 93 and sealing film 90 remains substrate W was maintained vacuum state.

Cover film forming unit 2 is a device for supplying the cover film material by a wet process to the substrate W, it is electrospray device in this embodiment. Incidentally, it is possible to form hundreds nm ~ several tens um cover film 93 having a thickness of the film-forming target by a wet process. The barrier properties of the cover film 93 is not high, the barrier properties are ensured by the sealing film 90 which will be described later.

Cover film forming unit 2 nozzle 21, syringe 22, the power source 23, and has a stage 24, the power supply 23 to the nozzle 21 to the cover film material supplied from the syringe 22 is filled therein to apply a voltage the solution material is sprayed towards the substrate W placed on the stage 24.

Nozzle 21 is a tubular member made of conductive, opening faces in the Z-axis direction (vertical direction). The nozzle 21 is connected to the syringe 22, the cover film material from the syringe 22 into the hollow portion of the nozzle is filled. In the present embodiment uses an inner diameter 0.8 mm, the tubular body having an outer diameter of 1.2mm as the nozzle 21.

Further, the nozzle 21 is connected to the power source 23, in a state where a voltage is applied to the cover film material through the hollow portion of the nozzle 21, and is configured to spray a solution material from the lower side to the upper side. The sprayed solution material from the nozzle 21, the spray is formed between the nozzle 21 and the substrate W, it is deposited as a cover film 93 to the substrate W.

Syringe 22 has a piston that slides inside wall of the tubular cylinder and the cylinder cover film material which is retained in the cylinder by driving in the direction in which the piston is pushed against the cylinder relative to the piston extruded from the opposite side, a cover film material extruded is supplied to the nozzle 21. Further, the piston is connected to a drive source (not shown), by the driving source piston feeding the cover film material 5 ~ 100 ul / min of about a trace amount to the nozzle 21 by precision drive. Incidentally, the syringe 22 is not the first decompression chamber 4 inside, may be installed on the atmosphere side of the outer chamber.

Stage 24 is a plate having a mechanism for gripping the substrate W, electrically conductive. In the present embodiment, the stage 24 is a metal plate. Stage 24 is configured to grounded contact from the nozzle 21 relative to the substrate W when forming the cover film opposite to the substrate W to grip the substrate W. Thus, a potential difference occurs between the nozzle 21 and the stage 24 to which a voltage is applied by the power source 23, the electric force lines are formed between the nozzle 21 and the stage 24. Then, the cover film material which voltage is applied ejected from the nozzle 21, under the influence of the electric line of force to fly toward the stage 24 (i.e. flying in the Z-axis direction) to form a spray.

Sealing film forming unit 3 is a device for supplying sealing film material by a dry process to the substrate W, a plasma CVD apparatus in the present embodiment. Incidentally, it is possible to form the sealing film 90 having a thickness of several tens nm ~ number um in the film-forming target by a dry process.

Sealing film forming unit 3, the film forming chamber 31, the electrode unit 32, the plasma gas supply source 33, a raw material gas supply source 34, a high frequency power source 35, and the electrode unit 32 has a stage 36 in the film forming chamber It is provided. Plasma gas and the raw material gas from the plasma gas source 33 and the raw material gas supply source 34 in a state where the pressure was reduced in the film forming chamber 31 is supplied by the high frequency power is applied to the electrode unit 32 by the high-frequency power source 35, inductively coupled plasma is generated plasma gas into plasma, the inductively coupled plasma to decompose the raw material gas. By this decomposed material gas deposited on the placed substrate W on the stage 36, the sealing film 90 is formed.

Deposition chamber 31, for example a plurality of stainless steel plates are box-shaped body of hollow formed by combining the rectangular shape, the electrode unit 32 is disposed within the space of the deposition chamber 31.

Further, the film forming chamber 31 is partially opened, the mesh 37 is provided in the opening, it is connected to the second decompression chamber 5 to be described later through a mesh 37. Then, in conjunction with the inside of the second decompression chamber 5 is reduced, the inside of the deposition chamber 31 also is reduced.

The outer wall portion which forms a film forming chamber 31 and plasma gas source 33 and the raw material gas supply source 34 is provided, the plasma gas and the raw material gas is supplied thereto from the film forming chamber 31.

In the present embodiment uses an HMDS (hexamethyldisilazane) gas as a source gas. In contrast, by using argon gas and hydrogen gas as the plasma gas, Si compound film is formed as a sealing film, also by the oxygen gas is used as the plasma gas, SiO2 film is formed as a sealing film that. Si compound film has high adhesion than SiO2 film, the SiO2 film has a higher barrier property than Si compound film. In the present embodiment has performed a plurality of times of deposition so that the the Si compound film and the SiO2 film are formed alternately, thereby forming a sealing film 90 having a both adhesion and high barrier property.

Electrode unit 32 is composed of a conductive material such as copper, it has a substantially U-shape, and is fixed to the wall of the deposition chamber 31.

Further, both ends of the electrode unit 32 is connected to a high frequency power supply 35, by the high-frequency power supply 35 is a high frequency power is applied to the electrode unit 32 in operation, a substantially U-shaped in the interior space of the film forming chamber 31 breakdown occurs between the electrode units 32 to the plasma the plasma gas.

Stage 36 is a plate having a mechanism for gripping the substrate W, and the opposite side, that provided in the second vacuum chamber 5 side and the electrode unit 32 across the mesh 37. Thus, the raw material gas is decomposed in the film forming chamber 31 is directed to the stage 36 through the mesh 37, to form a sealing film on the substrate W mounted on the stage 36. Here, by the mesh 37 is grounded, only radicals required for the deposition of the decomposed raw material gas passes through the mesh 37, unnecessary electron to deposition, ion, etc. adhered or repelled to the mesh 37 It is.

First decompression chamber 4 has a vacuum pump 41, by operating the vacuum pump 41, to the inner space (environment is lower pressure than the atmospheric pressure) vacuum environment. Then, the inside of the first vacuum chamber 4 is provided with a cover film forming unit 2, a cover film-forming operation by a wet process using a cover film forming unit 2 may be carried out in a reduced pressure environment.

Further, the first vacuum chamber 4 and the shutter 42 and the shutter 43 is provided by the shutter 42 is opened, carries the substrate W from the apparatus of the previous step from the cover film-forming unit 2, the shutter 43 is by opening, device process after the cover film forming unit 2 (in the present embodiment the sealing film forming unit 3) can be unloaded substrate W to.

Second decompression chamber 5 has a vacuum pump 51, by operating the vacuum pump 51, the internal space in a reduced pressure environment. Then, the inside of the second decompression chamber 5 is provided with a sealing film forming unit 3, be implemented sealing film formation operation by the dry process using the sealing film forming unit 3 in a reduced pressure environment it can.

Further, the second decompression chamber 5 and the shutter 52 and the shutter 53 is provided, by which the shutter 52 is opened, a sealing film forming unit 3 apparatus of the previous step from (in this embodiment the cover film forming section 2 ) carries the substrate W from by the shutter 53 is opened, it is possible to unload the substrate W to the device process after the sealing film forming unit 3.

Vacuum conveying path 6 is a conveying path of the substrate W from the first vacuum chamber 4 to the second decompression chamber 5, the partition wall 61, and a vacuum pump 62.

Partition wall 61 is a wall portion that blocks between the first vacuum chamber 4 and the second vacuum chamber 5 from the outside air, the substrate W is transported inside partitioned by the partition wall 61. Then, it is possible to vacuum environment vacuum conveying path 6 by the vacuum pump 62 is operated, the second decompression chamber from when the cover film 93 to the substrate W are formed in the first vacuum chamber 4 during the 5 to the sealing film 90 is formed on the substrate W, thereby maintaining a reduced pressure environment.

Here, within the first vacuum chamber 4, inside the second vacuum chamber 5, and pressure in the vacuum conveying path 6 are not necessarily identical. For example, by lower than the pressure of the pressure in the vacuum conveying path 6 first vacuum chamber 4 and the second vacuum chamber 5, when the cover film 93 is cured by the first decompression chamber within 4 it is possible to prevent the outgas generated enters the second vacuum chamber 5.

Also, by keeping the pressure environment in the vacuum conveying path 6 by supplying an inert gas such as Ar, it is higher than the pressure in the first vacuum chamber 4 and the second decompression chamber 5, such as a gas is first It prevents contamination from one vacuum chamber 4 to a vacuum conveying path 6, and also it is possible to prevent being mixed into vacuum conveying path 6 from the second decompression chamber 5.

Also, vacuum to the transport path 6 is transporting device 63 is provided for conveying the substrate W, by the hand 64 of the transfer device is moved to the first vacuum chamber 4, to take out the substrate W from the stage 24 can be, also, by the hand 64 is moved to the second vacuum chamber 5, it is possible to place the substrate W on the stage 36.

Next, an operation flow of the sealing film forming method of the present invention using the above sealing film forming apparatus 1 in FIG. The vacuum pump 41 in the present embodiment, the vacuum pump 51 and vacuum pump 62, it is always in operation, the first vacuum chamber 4, inside of the second vacuum chamber 5, and vacuum conveying path 6 is always under reduced pressure and those are.

First, the shutter 42 is opened, the substrate W is carried by a transport device (not shown) from the device before the step of the wet process to the first vacuum chamber 4 is placed to the stage 24 (step S1).

Then, the shutter 42 is closed, the pressure in the first vacuum chamber 4 after reaching a predetermined value, the cover film 93 on the surface of the substrate W is formed by a wet process (step S2).

After the cover film 93 is formed, the cover film 93 is cured by the first decompression chamber within 4 (step S3). It means for curing the cover layer 93 is heated, and the like ultraviolet irradiation.

Then, the substrate W is transferred from the first vacuum chamber 4 via the vacuum conveyance path 6 into the second vacuum chamber 5 (step S4). Thus, formation of the sealing film 90 from the time the formation of the cover film 93 is initiated pressure environment until the time is completed is maintained.

Here, during the conveyance of the substrate W is a shutter 43 and the shutter 52 is opened, the transport of the substrate W is performed by the transport device 63. At this time, in order to prevent outgassing occurring during the curing of the emergency cover film 93 that adversely affect the formation of the sealing film 90 enters the second decompression chamber 5, the shutter 43 is the hand 64 opened stage 24 while receiving a substrate W from which the shutter 52 is closed, the hand 64 so that the shutter 52 after the shutter 43 housed in a vacuum conveying path 6 receives the substrate W is closed to open. Then, the hand 64 enters the second vacuum chamber 5, and passes the substrate W to the stage 36.

Next, it closes the shutter 52, the pressure of the second pressure reducing chamber 5 after reaching a predetermined value, the sealing film 90 on the surface of the cover film 93 by a dry process is formed (step S5).

Finally, the shutter 53 is opened, the substrate W from the second decompression chamber 5 is carried out by the transport device (not shown), it is conveyed to the device of the next step (step S6).

Or of the sealing film forming apparatus 1 and the sealing film forming method sealing film 90 formed by using a takes the form as shown in FIG. That is, the cover film 93 is formed on the surface of the substrate W, the sealing film 90 is formed on the surface of the cover film 93.

Since the cover film 93 is formed by applying a covering film material that is flowable substrate W using a wet process, foreign materials 91 adhering to the substrate W by any chance is transported to the first vacuum chamber 4 cover film 93 even if it wraps the foreign object 91, the surface has no sharp recess so as not Mawarikome is sealing film material, becomes gentle. Then, the sealing film 90 is formed on the surface of the cover film 93.

Further, by forming the cover film 93 is formed of a sealing film 90 from the time of starting is reduced environment maintained until such time completed, so that the foreign matter 94 adheres to the surface of the cover film 93 as shown in FIG. 7 since there is no such, it can be interrupted obtain without a high barrier property sealing film 90.

On the other hand, in the series of steps of manufacturing an electronic device, other processes for even many of them carried out in a reduced pressure environment, reduced-pressure environment from the time of formation of the cover film 93 is started to the point the formation of the sealing film 90 is completed there it is maintained, the air pressure in order to perform a wet process returned to atmospheric pressure, there is also characterized in that it is possible to save time and effort is performed again under reduced pressure after the wet process.

Here, the cover film 93 wraps foreign matter 91, for the surface of the cover film 93 is gentle during the wet process cover film material is preferably held in a liquid state. However, under a low pressure environment solvent for easily volatilized, it is difficult to maintain the liquid state. Therefore, it is preferable that the solvent of the cover film material is free of low vapor pressure solvent. The cover film material itself such as epoxy resin, if a liquid solvent-free, such as an acrylic resin, since it is not necessary to consider the volatility of the solvent, more preferred.

Also, the curing in the form of a cover film material, if the cover film material is a heat-curable or ultraviolet curable liquid, and is easy to control the progress of curing even in a reduced pressure environment preferred. In addition, it may be a water-curable. At this time, although it may be cured by a slight water contained in the first vacuum chamber 4, the first vacuum chamber by the water supply means (not shown) after completion of the feeds the cover film material to the substrate W 4 of the water from the outside to the inside may be supplied.

Next, the relationship between pressure and discharge voltage of the first vacuum chamber 4 in the case of adopting electrospray applied as a wet process in the graph of FIG.

The electrospray coating, although a voltage is applied to the previously described nozzle 21, abnormal discharge occurred in the reduced pressure environment between and between the nozzle 21 and the stage 24 with the wall surface of the nozzle 21 and the first pressure reducing chamber 4 there is a possibility that the electrospray coating is difficult to perform.

Figure 3 is a plot of the discharge voltage between the wall surface of the nozzle 21 first vacuum chamber 4 in the chamber pressure of a plurality of patterns. In the present embodiment, the distance between the wall surface of the nozzle 21 and the first pressure reducing chamber 4 is about 200 mm, distance between the nozzle 21 and the stage 24 is 50 ~ 100 mm. As a result, for example, as shown by the two-dot chain line in FIG. 3, the change in discharge voltage takes a minimum value at a certain pressure in accordance with Paschen's law, the pressure in the pressure below has higher discharge voltage as low.

Here, in the present embodiment has a voltage of approximately 12kV to the nozzle 21 in electrospray coating, electrospray coating by suppressing abnormal discharge between the chamber walls if the chamber pressure is 0.2Pa or less was carried out, it is possible to form the cover film 93 stably.

The sealing film forming apparatus and a sealing film forming method described above, a high sealing film barrier property can be stably formed.

Here, the sealing film forming apparatus and a sealing film forming method of the present invention may be of other forms within the scope of the present invention is not limited to the embodiment described above. For example, in the embodiment of FIG. 1 are provided separately vacuum conveying path 6 having a partition wall 61 between the first decompression chamber 4 and the second decompression chamber 5, the first pressure reduction, as shown in FIG. 4 chamber 4 and the second vacuum chamber 5 and may be directly connected so the. In this case, the space where the openings of the first vacuum chamber 4, respectively of the outer wall of the second decompression chamber 5 is formed by connecting is vacuum conveying path 6.

Further, the substrate W is not limited to the sheet form as shown in FIG. 1 and the like, may be of a long film-like. In this case, the substrate W may be conveyed by a roll-to-roll, provided with an opening of minimum dimensions at this time the first vacuum chamber 4 and the second vacuum chamber 5 to the substrate W passes, the substrate W with the transport path, it can be gas generated in the process of the first vacuum chamber 4 and the second decompression chamber 5 is a do not easily enter the structure to another chamber.

The cover film forming section 2 may be other wet process apparatus is not limited to the electrospray device. For example, it may be a slit nozzle coating device and an inkjet application apparatus.

Moreover, a sealing film forming unit 3 may be another dry process apparatus is not limited to the CVD apparatus. For example, it may be a sputtering apparatus.

1 sealing film forming apparatus 2 cover layer forming portion 3 a sealing film forming unit 4 first decompression chamber 5 second vacuum chamber 6 vacuum conveying path 21 nozzle 22 the syringe 23 power 24 Stage 31 film forming chambers 32 electrode unit 33 Plasma gas supply 34 material gas supply source 35 high frequency power supply 36 stage 37 mesh 41 vacuum pump 42 shutter 43 shutter 51 vacuum pump 52 shutter 53 shutter 61 partition wall 62 a vacuum pump 63 conveying device 64 hand 90 sealing film 91 foreign matter 92 parts 93 cover film 94 foreign substance W substrate

Claims (5)

  1. A first vacuum chamber housing the substrate,
    A cover film forming unit for supplying the cover film material to form a cover film by the first pressure reducing wet process to the contained substrates in the chamber,
    A second decompression chamber for accommodating the substrate,
    A conveying path of the substrate from the first vacuum chamber to the second vacuum chamber, a vacuum conveying path is reduced,
    A sealing film forming unit for supplying the sealing film material to form a sealing film by the cover film to a dry process that is formed on a substrate housed in said second decompression chamber,
    Characterized in that it comprises a sealing film forming apparatus.
  2. The cover layer material, characterized in that it is a liquid solvent-free, protective film forming apparatus according to claim 1.
  3. The cover layer material, characterized in that it is a heat curing type or ultraviolet ray curing type or water-curable liquid, the protective film forming apparatus according to claim 1 or 2.
  4. The cover film-forming unit is electrospray device, and wherein the pressure of said cover layer material the first vacuum chamber at the time of supply is less than 0.2 Pa, in any one of claims 1 to 3 protective film forming apparatus according.
  5. A cover film forming step of supplying a cover film material to form a cover film by a wet process in a reduced pressure environment to a first vacuum stowed substrate into the chamber,
    A vacuum conveying step of conveying the substrate in a reduced pressure environment from the first vacuum chamber to the second decompression chamber,
    A sealing film forming step of supplying the sealing film material to form a sealing film by the second vacuum dry process in a reduced pressure environment to the cover film formed on the contained substrates in the chamber,
    And having a sealing film forming method.
PCT/JP2016/071098 2015-07-27 2016-07-19 Sealing film formation device and sealing film formation method WO2017018265A1 (en)

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JP2015-147965 2015-07-27

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KR20187003216A KR20180035826A (en) 2015-07-27 2016-07-19 Sealing film formation device and sealing film formation method
CN 201680043453 CN107849693A (en) 2015-07-27 2016-07-19 Sealing film formation device and sealing film formation method

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