WO2016206149A1 - 一种应用于半导体等离子体处理装置的弧面喷淋头 - Google Patents

一种应用于半导体等离子体处理装置的弧面喷淋头 Download PDF

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Publication number
WO2016206149A1
WO2016206149A1 PCT/CN2015/084431 CN2015084431W WO2016206149A1 WO 2016206149 A1 WO2016206149 A1 WO 2016206149A1 CN 2015084431 W CN2015084431 W CN 2015084431W WO 2016206149 A1 WO2016206149 A1 WO 2016206149A1
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shower head
spray head
plasma processing
stage
semiconductor plasma
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PCT/CN2015/084431
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English (en)
French (fr)
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吕光泉
吴凤丽
国建花
郑英杰
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沈阳拓荆科技有限公司
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Publication of WO2016206149A1 publication Critical patent/WO2016206149A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the invention relates to a arc surface shower head applied to a semiconductor plasma processing device, and belongs to the technical field of semiconductor manufacturing and application.
  • Conventional plasma processing apparatuses mostly perform plasma treatment on a load on a stage by forming a plasma in a reaction chamber.
  • a flat surface sprinkler is used as the upper plate and the surface is flat as the lower electrode, and the supply of the process gas is sprayed from the shower head, and the exhaust gas is uniformly exhausted from the periphery of the stage. After the pressure device is stabilized, a voltage is applied between the upper and lower plates to form a plasma for plasma treatment.
  • the gas transport direction is relatively transported from the center of the stage to the periphery, which tends to cause uneven distribution of gas and peripheral gas at the center of the stage, thereby causing uneven plasma distribution.
  • the plasma is controlled by the electric field at the near edge of the two plates, which is affected by the shape and material of the upper and lower plates, which causes the electric field to bend, which leads to uneven plasma distribution.
  • the above plasma distribution is not uniform, it is reflected in the plasma processing of the semiconductor, which is unevenness of the processing of the stage and the carrier, which reduces the excellent yield in the semiconductor processing process.
  • the present invention has been made in view of improving the uniformity of plasma treatment, and the object thereof is to provide a shower head which can achieve uniformity in plasma processing than conventional techniques, and mainly solves the problem that the prior art has insufficient uniformity and gas utilization. Lower technical issues.
  • the first aspect of the present invention is a shower head capable of achieving uniform processing of a semiconductor plasma processing process, the shower head being formed opposite to the stage and disposed in the reaction chamber, from the shower head Spraying a gas supply to the stage, the shower head being characterized in that: the lower surface of the shower head has an arc structure, That is, the distance between the lower surface of the shower head and the stage is not fixed, and the d from the center to the edge is not a fixed value and is a gradation value.
  • arcuate structure area under the shower head accounts for 1%-100% of the surface area under the showerhead.
  • the shower opening area of the shower head is provided with a plurality of through holes for the spray supply of gas.
  • the plurality of through holes provided by the shower head are uniformly or non-uniformly distributed in the opening area of the shower head.
  • the shower head may form an opposite electrode with the stage.
  • a voltage is applied between the shower head and the stage to form a plasma, and the object on the stage can be plasma-treated.
  • the novel curved surface sprinkler designed by the invention has the advantages of scientific and reasonable structure, can improve the gas utilization rate simply and effectively, and improve the uniformity of the plasma treatment. Can be widely used in the field of semiconductor manufacturing technology.
  • FIG. 1 is a schematic structural view of a shower head and a stage of the present invention, which is also an embodiment of the present invention
  • Figure 2 is a schematic view showing the deposition rate of the shower head of the present invention and the prior art surface having a planar structure.
  • the sprinkler of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become more apparent from the description.
  • the sprinkler head of the present invention will be described by taking a plasma ionization method to form a plasma as an example. It should be noted that the drawings used in the embodiments are all simplified in order to facilitate the explanation of the embodiments.
  • a curved surface shower head applied to a semiconductor plasma processing apparatus has a shower head formed opposite to a stage, and a lower surface of the shower head has a curved surface structure.
  • the shower head is provided with an opening area, and the opening area is provided with a plurality of through holes for spraying a reaction gas into the reaction chamber, and a voltage is applied between the shower head and the stage to form a plasma. Plasma treatment is carried out on the contents of the stage.
  • These through holes are distributed according to a certain rule, and may be uniformly distributed or non-uniformly distributed. This embodiment adopts a uniform distribution.
  • Concrete structure it includes a shower head body 2, A boss 3 is provided at the edge of the shower head main body 2; a concave portion of the shower head main body 2 is provided with an opening area, and a plurality of through holes 1 are formed in the opening area for the spray supply of gas.
  • the arcuate structural area of the lower surface of the shower head accounts for 100% of the surface area under the showerhead.
  • the process gas is supplied to the stage from the through hole of the shower head in a spray form, and is uniformly exhausted from the periphery of the stage 5, and is stabilized by the pressure control device, and the shower head and the stage 5 are used as the upper and lower sides.
  • the electrode is applied with a voltage to form a plasma field between the shower head and the stage, and the carrier 4 is subjected to plasma treatment.
  • the object 4 of the embodiment is a 300 mm silicon wafer.
  • the figure is based on the center of the silicon wafer, the x-axis is from the radial direction of the silicon wafer 3mm from the edge of the silicon wafer (-150mm-150mm), and the y-axis is the surface of the silicon wafer processed by plasma in the radial direction.
  • the deposition rate It can be seen that the lower surface of the shower head is a planar structure, and the deposition rate of the plasma treatment tends to gradually increase from the center to the edge along the radial direction of the silicon wafer, and the closer to the edge of the silicon wafer, the more obvious. With a non-planar sprinkler having a curved lower surface, the plasma treated deposition rate is averaged along the radial direction of the wafer.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种应用于半导体等离子体处理装置的弧面喷淋头，解决均匀性不够好、气体利用率较低的技术问题。喷淋头与载物台(5)形成相对面，设置于反应腔室中，从喷淋头以喷淋状向载物台(5)进行气体供给。喷淋头下表面为弧形结构，即喷淋头下表面各处与载物台(5)的距离不等值，从中心到边缘的距离不是固定值，是渐变值。喷淋头的喷淋开孔区域设置有多个通孔(1)，用于气体的喷淋状供给。喷淋头下面的弧面结构区域面积占喷淋头下表面积的1％-100％。通过喷淋头下表面的弧面结构可实现半导体等离子体处理工艺制程的均匀处理，能够提高气体的利用率。

Description

一种应用于半导体等离子体处理装置的弧面喷淋头 技术领域
本发明涉及一种应用于半导体等离子体处理装置的弧面喷淋头，属于半导体制造及应用技术领域。
背景技术
现有等离子体处理装置，大多是通过在反应腔室形成等离子体来对载物台上所载物进行等离子体处理。通常是使用表面平整的喷淋头作为上极板和表面平整的载物台做为下电极，从喷淋头以喷淋状进行工艺气体的供给，从载物台周围均匀排气，通过控压装置稳压后，在上下极板间施加电压，形成等离子体来进行等离子体处理。
在上述工艺过程中，相对来说气体运输方向为由载物台中心向外围运输，容易造成载物台中心的气体与外围气体分布不均，从而造成等离子分布的不均匀。另外，等离子体受电场控制在两极板的接近边缘处会受到上下极板的形状及材质的影响，从而会导致电场弯曲，进而导致等离子体的分布不均匀。在上述等离子体分布不均匀的情况下，体现在半导体的等离子体处理过程中就是对载物台及载物处理的不均匀，会降低半导体处理制程中的优良品率。
目前，随着半导体技术的不断发展，所需处理物面积会不断增大，传统喷淋头的处理方式而导致的均匀性降低问题会越发显著。因此，需要设计一种新型的喷淋头，提高等离子体工艺制程的均匀性，以适应技术不断提高的需要。
 技术问题
本发明是鉴于改善等离子体处理的均匀性而提出的，其目的是提供一种可以实现等离子体处理的均匀性高于传统技术的喷淋头，主要解决现有技术均匀性不够好、气体利用率较低的技术问题。
技术解决方案
本发明第一方面，是一种可实现半导体等离子体处理工艺制程的均匀处理的喷淋头，所述喷淋头与载物台形成相对面，设置于反应腔室中，从喷淋头以喷淋状向载物台进行气体供给，该喷淋头的特征在于：所述喷淋头下表面为弧形结构， 即喷淋头下表面各处与载物台距离为非固定值，从中心到边缘的d不是固定值，是渐变值 。
进一步地，所述喷淋头下面的弧面结构区域面积占喷淋头下表面积的1%-100%。
进一步地，所述喷淋头的喷淋开孔区域设置有多个通孔，用于气体的喷淋状供给。
进一步地，所述喷淋头设置的多个通孔为均匀或非均匀分布在喷淋头的开孔区域内。
进一步地，所述喷淋头可与载物台形成相对电极。
进一步地，所述喷淋头与载物台间施加电压形成等离子体，可对载物台上所载物进行等离子体处理。
 有益效果
本发明的有益效果及特点：
本发明所设计的新型弧面喷淋头，其结构科学合理，能够简单有效地提高气体的利用率，并改善等离子体处理的均匀性。可广泛应用于半导体制造技术领域。
 附图说明
图1是本发明喷淋头与载物台的结构示意图，也是本发明的实施例;
图2是本发明与现有下表面为平面结构的喷淋头沉积速率对比示意图。
 本发明的最佳实施方式
本发明的实施方式
下面结合附图和具体实施例对本发明的喷淋头做进一步详细说明。根据下面说明，本发明的优点和特征将更清楚。本文以射频电离方式形成等离子体为例，对本发明的喷淋头进行描述。需说明的是，实施例所用的附图均采用简化图，以便于辅助实施例的解释说明。
实施例
参照图1，一种应用于半导体等离子体处理装置的弧面喷淋头，其喷淋头与载物台形成相对面，喷淋头下表面为弧面结构。上述喷淋头上设有开孔区域，开孔区域设置有多个通孔，用于向反应腔室内以喷淋状喷射反应气体，喷淋头与载物台间施加电压形成等离子体，可对载物台上所载物进行等离子体处理。
这些通孔按照一定的规律进行分布，可以是均匀分布也可以是非均匀分布，本实施例采用均匀分布。
具体结构：它包括喷淋头主体2， 喷淋头主体2的边缘处设有凸台3；喷淋头主体2的凹面部分设置有开孔区域，开孔区域上制有多个通孔1，用于气体的喷淋状供给。
所述喷淋头下表面的弧面结构区域面积占喷淋头下表面积的100%。
从喷淋头的通孔以喷淋状对载物台进行工艺气体的供给，并从载物台5周围均匀排气，通过控压装置稳压后，喷淋头与载物台5作为上下电极来施加电压可在喷淋头与载物台间形成等离子体场，对所载物4进行等离子体处理，本实施例载物台所载物4是300mm硅片。
参照图2，是使用相同的工艺配方，分别在喷淋头下表面是平面结构以及在喷淋头下表面成弧形结构的情况下，进行等离子体处理的沉积速率情况对比图。
该图是以硅片的圆心为原点，x轴是沿着硅片径向距离硅片边3mm的坐标由（-150mm-150mm），y轴是硅片表面沿着径向方向经过等离子体处理的沉积速率。可见，喷淋头下表面是平面结构，经过等离子体处理的沉积速率沿着硅片径向方向呈现由中心向边缘逐渐变大的趋势，越靠近硅片边缘越明显。而使用下表面为弧形的非平面结构的喷淋头，经过等离子体处理的沉积速率沿着硅片径向方向表现的很平均。
 工业实用性
序列表自由内容

Claims (1)

  1. 1 、一种应用于半导体等离子体处理装置的弧面喷淋头，所述喷淋头与载物台形成相对面，设置于反应腔室中，从喷淋头以喷淋状向载物台进行气体供给，其特征在于：所述喷淋头下表面为弧形结构， 即喷淋头下表面各处与载物台的距离不等值，从中心到边缘的d不是固定值，是渐变值 。
    2 、如权利要求1所述的应用于半导体等离子体处理装置的弧面喷淋头，其特征在于：所述喷淋头下面的弧面结构区域面积占喷淋头下表面积的1%-100%。
    3 、如权利要求1所述的应用于半导体等离子体处理装置的弧面喷淋头，其特征在于：所述喷淋头的喷淋开孔区域设置有多个通孔，用于气体的喷淋状供给。
    4 、如权利要求1所述的应用于半导体等离子体处理装置的弧面喷淋头，其特征在于：所述喷淋头设置的多个通孔为均匀或非均匀分布在喷淋头的开孔区域内。
    5 、如权利要求1所述的应用于半导体等离子体处理装置的弧面喷淋头，其特征在于：喷淋头可与载物台形成相对电极。
    6 、如权利要求1所述的应用于半导体等离子体处理装置的弧面喷淋头，其特征在于：喷淋头与载物台间施加电压形成等离子体，可对载物台上所载物进行等离子体处理。
PCT/CN2015/084431 2015-06-25 2015-07-20 一种应用于半导体等离子体处理装置的弧面喷淋头 WO2016206149A1 (zh)

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CN104752144A (zh) * 2015-03-25 2015-07-01 沈阳拓荆科技有限公司 一种应用于半导体等离子体处理装置的非完全平面喷淋头
CN104835712A (zh) * 2015-03-25 2015-08-12 沈阳拓荆科技有限公司 一种应用于半导体等离子体处理装置的弧面喷淋头

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