WO2016188120A1 - 一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法 - Google Patents
一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法 Download PDFInfo
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- WO2016188120A1 WO2016188120A1 PCT/CN2016/000265 CN2016000265W WO2016188120A1 WO 2016188120 A1 WO2016188120 A1 WO 2016188120A1 CN 2016000265 W CN2016000265 W CN 2016000265W WO 2016188120 A1 WO2016188120 A1 WO 2016188120A1
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- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 84
- 239000010408 film Substances 0.000 claims abstract description 49
- 239000011787 zinc oxide Substances 0.000 claims abstract description 42
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 33
- 239000011733 molybdenum Substances 0.000 claims abstract description 33
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 4
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- 239000007888 film coating Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 3
- 238000012512 characterization method Methods 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 3
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
Claims (10)
- 一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法,其特征在于:使用激光器对在钠钙玻璃上制备的钼薄膜进行刻划,形成第一道刻线(P1);在完成第一道刻线(P1)刻划的钼层上依次进行以下膜层制备:铜铟镓硒层、硫化镉层、本征氧化锌层,完成上述膜层制备后,使用激光器进行刻划,形成第二道刻线(P2);在完成第二道刻线(P2)刻划后的本征氧化锌层上制备掺铝氧化锌层,使用激光器再次进行刻划,形成第三道刻划线(P3)。
- 根据权利要求1所述的全激光刻划方法,其特征在于:所述第二道刻线(P2)、第三道刻线(P3)均与第一道刻线(P1)平行。
- 一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法,其特征在于,所述方法包括以下步骤:(1)在钠钙玻璃基体上制备钼层;(2)采用激光器一对钼层进行刻划,将钼层完全刻断,形成第一道刻线(P1);所述第一道刻线(P1)一直刻划到玻璃基底表面,使第一道刻线(P1)两侧的子电池完全绝缘;(3)在钼层上制备铜铟镓硒膜层;(4)在铜铟镓硒膜层上制备硫化镉层;(5)在硫化镉层上制备本征氧化锌层;(6)采用激光器二进行刻划,将本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断,露出钼层,形成第二道刻线(P2);所述的第二道刻线(P2)将本征氧化锌层、硫化镉层以及铜铟镓硒层三层薄膜完全刻断,并且不损伤钼层表面;所述第二道刻线(P2)与第一道刻线(P1)刻线保持平行。(7)在本征氧化锌层上制备掺铝氧化锌层;(8)采用激光器三进行刻划,将掺铝氧化锌层、本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断,露出钼层,形成第三道刻线(P3),从而完成太阳能电池组件子电池的内联;所述P3刻线需要将掺铝氧化锌层、本征氧化锌层、硫化镉层、以及铜铟镓硒层四层薄膜完全刻断,并且不损伤钼层表面;所述第三道(P3)和第一道刻线(P1)、第二道刻线(P2)保持平行。
- 根据权利要求3所述的全激光刻划方法,其特征在于:所述的激光器一、激光器二、激光器三均为纳秒激光器、亚纳秒激光器或者皮秒激光 器中的一种。
- 根据权利要求4所述的全激光刻划方法,其特征在于:其中所述纳秒激光器为光纤脉冲激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式为TEM00,光束质量<1.3,脉冲宽度为1纳秒~600纳秒,单脉冲能量为1微焦~2000微焦,脉冲重复频率为1KHz~1000KHz,平均功率0~25瓦特;所述亚纳秒激光器为半导体激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式是TEM00,光束质量<1.3,脉冲宽度为600皮秒~2000皮秒,单脉冲能量为1微焦~300微焦,脉冲重复频率为10KHz~100KHz,平均功率为0~3瓦特;所述皮秒激光器为光纤脉冲激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式是TEM00,光束质量<1.3,脉冲宽度为小于10皮秒,单脉冲能量为1微焦~40微焦,脉冲重复频率为1Hz~1000KHz,平均功率为0~6瓦特。
- 根据权利要求3所述的全激光刻划方法,其特征在于:所述的第一道刻线(P1)既可以采用从膜面入射的方式也可以采用从玻璃面入射的方式;所述激光从膜面入射是指激光光束位于薄膜镀面的方向,通过聚焦透镜聚焦到薄膜表面;所述激光从玻璃面入射是指激光光束位于薄膜镀膜面的反方向,也就是位于基片的底部,通过聚焦透镜将激光穿过玻璃基底聚焦到薄膜上。
- 根据权利要求3所述的全激光刻划方法,其特征在于:所述的第二道刻线(P2)、第三道刻线(P3)均采用从膜面入射的方式。
- 根据权利要求3所述的全激光刻划方法,其特征在于:在步骤(1)中,所述钼层厚度为600纳米~1200纳米。
- 根据权利要求3或8任一项权利要求所述的全激光刻划方法,其特征在于:在步骤(3)中,所述铜铟镓硒层厚度为1.0~2.0微米;所述硫化镉层厚度为30~80纳米;所述本征氧化锌膜层厚度为50~150纳米。
- 根据权利要求3或9任一项权利要求所述的全激光刻划方法,其特征在于:在步骤(5)中,掺铝氧化锌膜层厚度为300~1000纳米。
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DE112016002346.4T DE112016002346T5 (de) | 2015-05-25 | 2016-05-17 | Komplettes Laserziehrief- und -ritzverfahren für großflächige CIGS-Dünnfilm-Solarzellenmodule |
US15/573,275 US10418508B2 (en) | 2015-05-25 | 2016-05-17 | Full-laser scribing method for large-area copper indium gallium selenide thin-film solar cell module |
GB1719020.8A GB2555277B (en) | 2015-05-25 | 2016-05-17 | Full-laser scribing method for large-area copper indium gallium selenide thin-film solar cell module |
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Cited By (4)
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CN110265508A (zh) * | 2019-07-23 | 2019-09-20 | 绵阳金能移动能源有限公司 | 一种高阻水柔性内联式cigs太阳能电池及其制备方法 |
CN110364579A (zh) * | 2019-07-23 | 2019-10-22 | 绵阳金能移动能源有限公司 | 一种柔性内联式cigs太阳能电池及其制备方法 |
CN110797417A (zh) * | 2018-08-03 | 2020-02-14 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池的制备方法 |
CN117399801A (zh) * | 2023-09-04 | 2024-01-16 | 深圳市丰源升科技有限公司 | 一种钙钛矿太阳能电池的激光刻蚀划线方法 |
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