WO2016188120A1 - 一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法 - Google Patents
一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法 Download PDFInfo
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- WO2016188120A1 WO2016188120A1 PCT/CN2016/000265 CN2016000265W WO2016188120A1 WO 2016188120 A1 WO2016188120 A1 WO 2016188120A1 CN 2016000265 W CN2016000265 W CN 2016000265W WO 2016188120 A1 WO2016188120 A1 WO 2016188120A1
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- laser
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- zinc oxide
- indium gallium
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- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000010409 thin film Substances 0.000 title claims abstract description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 84
- 239000010408 film Substances 0.000 claims abstract description 49
- 239000011787 zinc oxide Substances 0.000 claims abstract description 42
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 33
- 239000011733 molybdenum Substances 0.000 claims abstract description 33
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 18
- 239000005361 soda-lime glass Substances 0.000 claims description 9
- 239000000835 fiber Substances 0.000 claims description 4
- 239000007888 film coating Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims description 3
- 238000012512 characterization method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 3
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention belongs to the technical field of thin film solar cells, and in particular relates to a method for manufacturing a large-area copper indium gallium selenide thin film solar cell module.
- Copper indium gallium selenide thin film solar cells have become one of the most promising photovoltaic materials in thin film solar cells because of their adjustable optical band gap, strong radiation resistance, stable battery performance and poor light performance.
- Battery inline technology is one of the key technologies for the production of copper indium gallium selenide thin film solar modules.
- the industry generally uses mechanical needles to scribe, the processing speed is generally about 0.5m / s, the processing line width will usually reach 50 ⁇ 80 ⁇ m or more, and easy Flanging and chipping occur, the dead zone width can reach 500 ⁇ m ⁇ 600 ⁇ m, the component power loss is high; at the same time, the mechanical needle loss is serious, the mechanical needle needs to be replaced frequently and the equipment is regularly maintained, which increases the component manufacturing cost.
- the laser repetition frequency can be from 30 MHz to 1 GHz
- the processing speed can reach 2 to 3 m/s
- the focus width can be reduced by focusing on the laser, and the flanging can be reduced or even eliminated.
- the phenomenon of chipping the dead zone width is reduced to below 200 ⁇ m, thus greatly reducing the power loss of the component after scribing, and the processing efficiency is high and the production cost is low.
- the laser has the characteristics of stable operation and long life, thus reducing equipment maintenance costs and production costs.
- the laser repetition frequency reaches 30MHz ⁇ 1GHz
- the processing speed can reach 2 ⁇ 3m/s.
- the reticle width can be reduced, and the flanging and chipping phenomenon can be reduced or even eliminated, and the dead zone width can be reduced to below 200 ⁇ m. Therefore, the power loss of the component after scoring is greatly reduced, and the processing efficiency is high and the production cost is low.
- the laser has the characteristics of stable operation and long life, thus reducing equipment maintenance costs.
- Full laser scribing method for large area copper indium gallium selenide thin film solar cell module provided by the present invention, the method includes the following steps:
- the molybdenum layer is completely nicked to form a first scribe line (P1); the first scribe line (P1) is scribed all the way to the surface of the soda lime glass, so that The sub-cells on both sides of the first reticle (P1) are completely insulated;
- the laser one, the laser two, and the laser three are one of a nanosecond laser, a sub-nanosecond laser, or a picosecond laser.
- the nanosecond laser is a fiber laser
- the laser wavelength is one of 1064 nm, 532 nm, and 355 nm, or both of the wavelength modes
- the beam mode is TEM 00
- the beam quality is M 2 .
- the pulse width is 1 nanosecond to 600 nanoseconds
- the single pulse energy is 1 microjoule to 2000 microjoule
- the pulse repetition frequency is 1 kHz to 1000 kHz
- the average power is 0 to 25 watts
- the sub-nanosecond laser is a semiconductor
- the laser has a laser wavelength of one of 1064 nm, 532 nm, and 355 nm, or has more than two wavelength modes.
- the Beam Mode is TEM 00
- the beam quality (M 2 ) is ⁇ 1.3
- the pulse width is 600 picoseconds.
- single pulse energy is 1 microjoule to 300 microjoule
- pulse repetition frequency is 10KHz to 100KHz
- average power is 0 to 3 watts
- the picosecond laser is fiber laser
- laser wavelength is 1064nm
- Beam Mode is TEM 00
- beam quality (M 2 ) is ⁇ 1.3
- pulse width is less than 10 picoseconds
- single pulse energy is 1 micro.
- the focus is ⁇ 40 microjoules
- the pulse repetition frequency is 1 Hz to 1000 kHz
- the average power is 0 to 6 watts.
- a full laser scribing method for a large-area copper indium gallium selenide thin film solar cell module characterized in that the first reticle (P1) can be either incident from the film surface or from The way in which the glass surface is incident; the incident of the laser light from the film surface means that the laser beam is located in the direction of the film coating surface, and is focused by the focusing lens to the surface of the film; the incident of the laser light from the glass surface means that the laser beam is located in the opposite direction of the film coating surface. That is, at the bottom of the substrate, the laser is focused through the glass substrate onto the film through a focusing lens.
- the second reticle (P2) is incident from the film surface.
- a full laser scribing method of a large-area copper indium gallium selenide thin film solar cell module is characterized in that the thickness of the molybdenum layer is 600 nm to 1200 nm; and the thickness of the copper indium gallium selenide layer is 1.0 to 2.0.
- the thickness of the cadmium sulfide layer is 30 to 80 nm; the thickness of the intrinsic zinc oxide film is 50 to 150 nm; and the thickness of the aluminum-doped zinc oxide film is 300 to 1000 nm.
- a full laser scribing method for a large-area copper indium gallium selenide thin film solar cell module characterized in that the first reticle (P1) is parallel to the edge of the glass substrate, and the second scribe line ( P2) is parallel to P1, and the third scribe line (P3) is also parallel to P1.
- the invention adopts the full laser scribing method to realize the in-cell interconnection of the large-area copper indium gallium selenide thin film solar cell module, can effectively reduce the dead zone area of the component, and improve the component power of the copper indium gallium selenide thin film solar cell, and can avoid the tradition.
- Mechanical scoring requires frequent replacement of mechanical needles, increasing component production efficiency and reducing production and maintenance costs.
- FIG. 1 is a schematic structural view of a copper indium gallium selenide thin film solar cell according to the present invention
- FIG. 2 is a schematic view showing a full laser scribing method of a copper indium gallium selenide thin film solar cell module of the present invention
- Figure 3 is a schematic view of the P1 scribing of the present invention.
- Figure 4 is a schematic view of the P2 scribing of the present invention.
- Figure 5 is a schematic view of the P3 scribing of the present invention.
- Figure 7 is a top view of the P2 after the first embodiment
- FIG. 8 is a topographical view after P3 scribing in the first embodiment.
- FIG. 1 is a schematic structural view of a large-area copper indium gallium selenide thin film solar cell according to the present invention; as shown in FIG. 1, the battery includes a glass substrate, a molybdenum layer, a copper indium gallium selenide layer, a cadmium sulfide layer, and an intrinsic zinc oxide layer. And an aluminum-doped zinc oxide layer;
- FIG. 2 is a schematic structural view of a full-area laser scribing of a large-area copper indium gallium selenide thin film solar cell according to the present invention; as shown in FIG. 2, the full laser scribing method includes three channels.
- Laser scribing firstly preparing a molybdenum film on a glass substrate, using a laser to sever the prepared molybdenum film to form a first scribe line (P1); and sequentially performing the following layers on the molybdenum layer on which the P1 scribe is completed.
- P1 first scribe line
- the method of fabricating the battery includes the following steps:
- Step 1 Preparation of a molybdenum film: A Mo film was prepared on a soda lime glass substrate by DC magnetron sputtering, and the film layer had a thickness of 1 ⁇ m.
- Step 2 P1 scribing: using picosecond laser, pulse width 8 picoseconds, wavelength 1064nm, scoring power 0.55W, single pulse energy 6.88uJ, repetition frequency 80kHz, laser incident from the back side of the coated substrate, sample The P1 was scored and the scoring speed was 2 m/s.
- the width of the score line after the scribe is 38.7 ⁇ m, and the schematic diagram of the scribe is shown in Fig. 3.
- the molybdenum layer in the reticle is completely removed to expose the surface of the soda lime glass, and the effect after scribing is as shown in Fig. 6.
- Step 3 preparing a copper indium gallium selenide film: a method of magnetron sputtering metal pre-film selenization is used to prepare a copper indium gallium selenide layer on the substrate on which the P1 is scribed, and the thickness of the film layer is 1 ⁇ m.
- Step 4 preparing a cadmium sulfide film: a cadmium sulfide layer is prepared on a deposited CIGS film by a chemical water bath method, and the thickness of the film layer is 50 nm.
- Step 5 preparing an intrinsic zinc oxide film: a DC magnetron sputtering method is used to prepare an intrinsic zinc oxide layer on a substrate on which a cadmium sulfide film is formed, and the film layer has a thickness of 50 nm.
- Step 6 P2 scribing: picosecond laser with a pulse width of 8 picoseconds, a wavelength of 1064 nm with a scoring power of 5 W, a single pulse energy of 5 ⁇ J, and a repetition rate of 1000 kHz.
- the laser is incident from the coated glass membrane surface, and the sample is subjected to P2.
- the scribing speed is 2m/s, and the width of the P2 line after scribing is 46.64 ⁇ m.
- the schematic diagram of the scribing is shown in Figure 4.
- the intrinsic zinc oxide, cadmium sulfide and copper indium gallium selenide are completely cut.
- the molybdenum layer is exposed, and the effect diagram after scribing is shown in FIG.
- Adopt The automatic tracking system ensures that the P2 line is parallel to the P1 line.
- Step 7 preparing an aluminum-doped zinc oxide film: using a magnetron sputtering method, an aluminum zinc oxide layer is prepared on the P2-etched substrate, and the film thickness is 800 nm.
- Step 8 P3 scribing: using a picosecond laser with a pulse width of 8 picoseconds, a wavelength of 1064 nm, a scribing power of 5.5 W, a single pulse energy of 5.5 uJ, and a repetition rate of 1000 kHz.
- the laser is incident from the coated glass film surface.
- the sample was subjected to P3 scribing, the scoring speed was 2m/s, and the aluminum-doped zinc oxide layer, the intrinsic zinc oxide, the cadmium sulfide layer and the copper indium gallium selenide layer were completely cut to expose the molybdenum layer, and the component was scored and scored.
- the schematic view is shown in Fig. 5.
- the width of the scribe line is 47 ⁇ m, and the effect after scribing is as shown in Fig. 8. It can be seen from Figure 8 that the dead zone width of the assembly is 196 ⁇ m.
- An automatic tracking system is used to ensure that the P3 line is parallel to the P1 line.
- Step one is the same as in the first embodiment.
- Step 2 P1 scribing: using a picosecond laser with a pulse width of 8 picoseconds, a wavelength of 532 nm, a scribing power of 2.5 W, a single pulse energy of 31.25 ⁇ J, and a repetition rate of 80 kHz.
- the laser is incident from the back side of the coated substrate to the sample.
- the P1 was scored and the scoring speed was 2 m/s. After the scribe, the width of the scribe line was 35 ⁇ m, and the Mo layer in the scribe line was completely removed to expose the surface of the soda lime glass.
- Steps 3 to 8 are the same as in Embodiment 1.
- Step one is the same as in the first embodiment.
- Step 2 P1 scribing: using a nanosecond laser with a pulse width of 10 nanoseconds, a wavelength of 1064 nm, a scribing power of 3.2 W, a single pulse energy of 40 uJ, a repetition rate of 80 kHz, and a laser incident from the back side of the coated substrate to sample P1 is scored and the scoring speed is 2m/s.
- the width of the scribe line was 33 ⁇ m, and the Mo layer in the scribe line was completely removed to expose the surface of the soda lime glass.
- Steps 3 to 8 are the same as in Embodiment 1.
- Step one is the same as in the first embodiment.
- Step 2 P1 scribing: using a sub-nanosecond laser with a pulse width of 800 picoseconds, a wavelength of 532 nm, a scoring power of 0.65 W, a single pulse energy of 8.13 uJ, a repetition rate of 80 kHz, and a laser incident from the back side of the coated substrate, The sample was scored with P1 and the scoring speed was 2 m/s. After the scribe, the width of the scribe line was 30 ⁇ m, and the Mo layer in the scribe line was completely removed to expose the surface of the soda lime glass.
- Steps 3 to 8 are the same as in Embodiment 1.
- Steps 1 to 5 are the same as in Embodiment 1.
- Step 6 P2 scribing: sub-nanosecond laser with pulse width of 800 picoseconds, wavelength of 532 nm, scoring power of 2.1 W, single pulse energy of 5 uJ, repetition frequency of 100 kHz, laser incident from the coated glass film surface, The sample was subjected to P2 scribing, the scoring speed was 0.2m/s, and the width of the P2 engraved line after scribing was 48 ⁇ m. After engraving, the intrinsic zinc oxide, cadmium sulfide and copper indium gallium selenide of the battery were completely cut to expose the molybdenum layer. . An automatic tracking system is used to ensure that the P2 line is parallel to the P1 line.
- Steps 7 to 8 are the same as in Embodiment 1.
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- 一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法,其特征在于:使用激光器对在钠钙玻璃上制备的钼薄膜进行刻划,形成第一道刻线(P1);在完成第一道刻线(P1)刻划的钼层上依次进行以下膜层制备:铜铟镓硒层、硫化镉层、本征氧化锌层,完成上述膜层制备后,使用激光器进行刻划,形成第二道刻线(P2);在完成第二道刻线(P2)刻划后的本征氧化锌层上制备掺铝氧化锌层,使用激光器再次进行刻划,形成第三道刻划线(P3)。
- 根据权利要求1所述的全激光刻划方法,其特征在于:所述第二道刻线(P2)、第三道刻线(P3)均与第一道刻线(P1)平行。
- 一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法,其特征在于,所述方法包括以下步骤:(1)在钠钙玻璃基体上制备钼层;(2)采用激光器一对钼层进行刻划,将钼层完全刻断,形成第一道刻线(P1);所述第一道刻线(P1)一直刻划到玻璃基底表面,使第一道刻线(P1)两侧的子电池完全绝缘;(3)在钼层上制备铜铟镓硒膜层;(4)在铜铟镓硒膜层上制备硫化镉层;(5)在硫化镉层上制备本征氧化锌层;(6)采用激光器二进行刻划,将本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断,露出钼层,形成第二道刻线(P2);所述的第二道刻线(P2)将本征氧化锌层、硫化镉层以及铜铟镓硒层三层薄膜完全刻断,并且不损伤钼层表面;所述第二道刻线(P2)与第一道刻线(P1)刻线保持平行。(7)在本征氧化锌层上制备掺铝氧化锌层;(8)采用激光器三进行刻划,将掺铝氧化锌层、本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断,露出钼层,形成第三道刻线(P3),从而完成太阳能电池组件子电池的内联;所述P3刻线需要将掺铝氧化锌层、本征氧化锌层、硫化镉层、以及铜铟镓硒层四层薄膜完全刻断,并且不损伤钼层表面;所述第三道(P3)和第一道刻线(P1)、第二道刻线(P2)保持平行。
- 根据权利要求3所述的全激光刻划方法,其特征在于:所述的激光器一、激光器二、激光器三均为纳秒激光器、亚纳秒激光器或者皮秒激光 器中的一种。
- 根据权利要求4所述的全激光刻划方法,其特征在于:其中所述纳秒激光器为光纤脉冲激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式为TEM00,光束质量<1.3,脉冲宽度为1纳秒~600纳秒,单脉冲能量为1微焦~2000微焦,脉冲重复频率为1KHz~1000KHz,平均功率0~25瓦特;所述亚纳秒激光器为半导体激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式是TEM00,光束质量<1.3,脉冲宽度为600皮秒~2000皮秒,单脉冲能量为1微焦~300微焦,脉冲重复频率为10KHz~100KHz,平均功率为0~3瓦特;所述皮秒激光器为光纤脉冲激光器,激光波长为1064nm、532nm和355nm中的一种,或者兼具两种以上波长模式,光束模式是TEM00,光束质量<1.3,脉冲宽度为小于10皮秒,单脉冲能量为1微焦~40微焦,脉冲重复频率为1Hz~1000KHz,平均功率为0~6瓦特。
- 根据权利要求3所述的全激光刻划方法,其特征在于:所述的第一道刻线(P1)既可以采用从膜面入射的方式也可以采用从玻璃面入射的方式;所述激光从膜面入射是指激光光束位于薄膜镀面的方向,通过聚焦透镜聚焦到薄膜表面;所述激光从玻璃面入射是指激光光束位于薄膜镀膜面的反方向,也就是位于基片的底部,通过聚焦透镜将激光穿过玻璃基底聚焦到薄膜上。
- 根据权利要求3所述的全激光刻划方法,其特征在于:所述的第二道刻线(P2)、第三道刻线(P3)均采用从膜面入射的方式。
- 根据权利要求3所述的全激光刻划方法,其特征在于:在步骤(1)中,所述钼层厚度为600纳米~1200纳米。
- 根据权利要求3或8任一项权利要求所述的全激光刻划方法,其特征在于:在步骤(3)中,所述铜铟镓硒层厚度为1.0~2.0微米;所述硫化镉层厚度为30~80纳米;所述本征氧化锌膜层厚度为50~150纳米。
- 根据权利要求3或9任一项权利要求所述的全激光刻划方法,其特征在于:在步骤(5)中,掺铝氧化锌膜层厚度为300~1000纳米。
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