CN104993013A - 一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法 - Google Patents

一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法 Download PDF

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CN104993013A
CN104993013A CN201510271942.8A CN201510271942A CN104993013A CN 104993013 A CN104993013 A CN 104993013A CN 201510271942 A CN201510271942 A CN 201510271942A CN 104993013 A CN104993013 A CN 104993013A
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张宁
余新平
戴万雷
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Beijing Sifang Automation Co Ltd
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Abstract

一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，使用激光器一对在钠钙玻璃上制备的钼薄膜进行刻划，形成第一道刻线(P1)；在完成P1刻划的钼层上依次进行以下膜层制备：铜铟镓硒层、硫化镉层、本征氧化锌层，完成上述膜层制备后，使用激光器二进行刻划，形成第二道刻线(P2)，P2刻线与P1刻线平行；在完成P2刻划的本征氧化锌层上制备掺铝氧化锌层，使用激光器三进行刻划，形成第三道刻划线(P3)，P3刻线与P1刻线平行。本发明全部采用激光刻划的方式对铜铟镓硒薄膜太阳能电池进行内联，可以避免传统的机械刻划造成死区面积大以及经常更换机械针等弊端，从而提高组件的效率和刻划设备的稳定性，达到降低生产成本、提高生产效率的目的。

Description

一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法
技术领域
本发明属于薄膜太阳能电池技术领域，尤其涉及大面积铜铟镓硒薄膜太阳能电池组件制造方法。
背景技术
能源危机和环境污染是当今全球所面临的两大基本问题。太阳能取之不尽、用之不竭，是解决能源危机的一种重要途径。铜铟镓硒薄膜太阳能电池因为其材料光学带隙可调、抗辐射能力强、电池性能稳定、弱光性好等优点，使之成为薄膜太阳能电池中最有发展前景的光伏材料之一。
电池内联技术是铜铟镓硒薄膜太阳能组件生产的关键技术之一。目前对于大面积铜铟镓硒薄膜太阳能电池组件生产，业内普遍采用机械针的方式进行刻划，其加工速度一般在0.5m/s左右,加工的线宽通常会达到50～80μm以上，并且容易发生翻边和崩边现象，死区宽度可达500μm～600μm以上，组件功率损失较高；同时机械针损耗严重，需要频繁更换机械针并定期对设备进行维护，加大了组件制造成本。采用本发明所述的全激光刻划方法，由于激光器重复频率可在30MHz～1GHz，因此加工速度可达2～3m/s，通过对激光聚焦可以减小刻线宽度，减小甚至消除翻边和崩边现象，将死区宽度降至200μm以下，因此大大减小了刻划后的组件功率损失，并且加工效率高，生产成本低。另外，激光器具有运行稳定，寿命长等特点，因此降低了设备维护成本和生产成本。
发明内容
本发明的目的在于提供一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法完成铜铟镓硒薄膜太阳能电池的全部三道刻划，实现太阳能电池组件的子电池内联。由于激光器重复频率达到30MHz～1GHz，因此加工速度可达2～3m/s，通过对激光聚焦可以减小刻线宽度，减小甚至消除翻边和崩边现象，将死区宽度降至200μm以下，因此大大减少了刻划后的组件功率损失，并且加工效率高，生产成本低。另外，激光器具有运行稳定，寿命长等特点，因此降低了设备维护成本。
本发明提供的一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，所述方法包括以下步骤：
(1)在钠钙玻璃基体上制备钼层；
(2)采用激光器一对钼层进行刻划，将钼层完全刻断，形成第一道刻线(P1)；所述第一道刻线(P1)一直刻划到钠钙玻璃表面，使第一道刻线(P1)两侧的子电池完全绝缘；
(3)在钼层上制备铜铟镓硒膜层；
(4)在铜铟镓硒膜层上制备硫化镉层；
(5)在硫化镉层上制备本征氧化锌层；
(6)采用激光器二进行刻划，将本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断，露出钼层，形成第二道刻线(P2)；所述的第二道刻线(P2)将本征氧化锌层、硫化镉层、以及铜铟镓硒层三层薄膜完全刻断，并且不损伤钼层表面，所述第二道刻线(P2)与第一道刻线(P1)刻线保持平行。
(7)在本征氧化锌层上制备掺铝氧化锌层；
(8)采用激光器三进行刻划，将掺铝氧化锌层、本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断，露出钼层，形成第三道刻线(P3)，从而完成铜铟镓硒薄膜太阳能电池组件子电池的内联；所述P3刻线需要将掺铝氧化锌层、本征氧化锌层、硫化镉层、以及铜铟镓硒层四层薄膜完全刻断，并且不损伤钼层表面；所述第三道(P3)和第一道刻线(P1)、第二道刻线(P2)保持平行。
根据上述的一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，所述的激光器一、激光器二、激光器三均为纳秒激光器、亚纳秒激光器或者皮秒激光器中的一种；其中所述纳秒激光器为光纤脉冲激光器，激光波长为1064nm、532nm和355nm中的一种，或者兼具两种以上波长模式，光束模式(Beam Mode)为TEM00，光束质量(M2)<1.3，脉冲宽度为1纳秒～600纳秒，单脉冲能量为1微焦～2000微焦，脉冲重复频率为1KHz～1000KHz，平均功率0～25瓦特；所述亚纳秒激光器为半导体激光器，激光波长为1064nm、532nm和355nm中的一种，或者兼具两种以上波长模式，光束模式(Beam Mode)是TEM00，光束质量(M2)<1.3，脉冲宽度为600皮秒～2000皮秒，单脉冲能量为1微焦～300微焦，脉冲重复频率为10KHz～100KHz，平均功率为0～3瓦特；所述皮秒激光器为光纤脉冲激光器，激光波长为1064nm、532nm和355nm中的一种，或者兼具两种以上波长模式，光束模式(BeamMode)是TEM00，光束质量(M2)<1.3，脉冲宽度为小于10皮秒，单脉冲能量为1微焦～40微焦，脉冲重复频率为1Hz～1000KHz，平均功率为0～6瓦特。
根据上述的一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，其特征在于，所述的第一道刻线(P1)既可以采用从膜面入射的方式也可以采用从玻璃面入射的方式；所述激光从膜面入射是指激光光束位于薄膜镀面的方向，通过聚焦透镜聚焦到薄膜表面；所述激光从玻璃面入射是指激光光束位于薄膜镀膜面的反方向，也就是位于基片的底部，通过聚焦透镜将激光穿过玻璃基底聚焦到薄膜上。
根据上述的一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，其特征在于，所述的第二道刻线(P2)采用从膜面入射的方式。
根据上述的一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，其特征在于，所述的第三道刻线(P3)采用从膜面入射的方式。
根据上述的一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，其特征在于，所述钼层厚度为600纳米～1200纳米；所述铜铟镓硒层厚度为1.0～2.0微米；所述硫化镉层厚度为30～80纳米；所述本征氧化锌薄膜厚度为50～150纳米；所述掺铝氧化锌薄膜厚度为300～1000纳米。
根据上述的一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，其特征在于，所述第一道刻线(P1)与玻璃基体边缘平行，所述第二道刻线(P2)与P1平行，所述第三道刻线(P3)也与P1平行。
本发明采用全激光刻划的方式实现对大面积铜铟镓硒薄膜太阳能电池组件的子电池内联，可有效降低组件死区面积，提高铜铟镓硒薄膜太阳能电池的组件功率，可以避免传统的机械刻划需要经常更换机械针头的问题，提高了组件生产效率，降低了生产和维护成本。
附图说明
图1为本发明所述的铜铟镓硒薄膜太阳能电池的结构示意图；
图2本发明铜铟镓硒薄膜太阳能电池组件的全激光刻划方法示意图；
图3为本发明所述的P1刻划的示意图；
图4为本发明所述的P2刻划的示意图；
图5为本发明所述的P3刻划的示意图；
图6为实施例一中P1刻划后的形貌图；
图7为实施例一中P2刻划后的形貌图；
图8为实施例一中P3刻划后的形貌图。
具体实施方式
以下结合实施案例以及说明书附图对本发明的技术方案作进一步地说明。
实施例一
图1为本发明所述的大面积铜铟镓硒薄膜太阳能电池结构示意图；如图1所示，该电池包括玻璃基体、钼层、铜铟镓硒层、硫化镉层、本征氧化锌层以及掺铝氧化锌层；图2为本发明所述的一种大面积铜铟镓硒薄膜太阳能电池的全激光刻划的结构示意图；如图2所示，该全激光刻划方法包含三道激光刻划，首先在玻璃基底上制备钼膜，使用激光器一将已经制备好的钼膜刻断，形成第一道刻线(P1)；在完成P1刻划的钼层上依次进行以下膜层制备：铜铟镓硒薄膜、硫化镉薄膜、本征化锌薄膜，使用激光器二进行刻划，形成第二道刻线(P2)，P2刻线与P1刻线平行，第二道刻线将钼层以上的铜铟镓硒、硫化镉以及本征氧化锌完全清除；在完成P2刻划的本征氧化锌层上制备掺铝氧化锌层，使用激光器三进行刻划，形成第三道刻划线(P3)，P3刻线与P1刻线平行，第三道激光刻划将钼层以上的铜铟镓硒、硫化镉以、本征氧化锌以及掺铝氧化锌完全清除。
根据本发明，该电池的制作方法包括以下的步骤：
步骤一，制备钼膜：采用直流磁控溅射的方法在钠钙玻璃基底上制备Mo膜，膜层的厚度为1μm。
步骤二，P1刻划：采用皮秒激光器，脉冲宽度8皮秒，波长为1064nm，刻划功率为0.55W，单脉冲能量为6.88uJ，重复频率为80kHz，激光从镀膜基底背面入射，对样品进行P1刻划，刻划速度为2m/s。刻划后刻线的宽度为38.7μm，刻划的示意图如图3所示，刻线内钼层被完全清除，露出钠钙玻璃表面，刻划后的效果如图6所示。
步骤三，制备铜铟镓硒薄膜：采用磁控溅射金属预置膜后硒化的方法，在完成P1刻划的基片上制备铜铟镓硒层，膜层的厚度为1μm。
步骤四，制备硫化镉薄膜：采用化学水浴法，在沉积CIGS薄膜上制备硫化镉层，膜层的厚度为50nm。
步骤五，制备本征氧化锌薄膜：采用直流磁控溅射的方法，在完成硫化镉薄膜的基片上制备本征氧化锌层，膜层的厚度为50nm。
步骤六，P2刻划：皮秒激光器，脉冲宽度为8皮秒，波长为1064nm刻划功率为5W，单脉冲能量为5μJ,重复频率为1000kHz，激光从镀膜玻璃膜面入射，对样品进行P2刻划，刻划速度为2m/s，刻划后的P2刻线宽度为46.64μm，刻划的示意图如图4所示，电池本征氧化锌、硫化镉以及铜铟镓硒完全刻断，露出钼层，刻划后的效果图如图7所示。采用自动追踪系统保证P2划线与P1划线平行。
步骤七，制备掺铝氧化锌薄膜：采用磁控溅射方法，在完成P2刻划的基片上制备铝氧化锌层，膜层厚度为800nm。
步骤八，P3刻划：采用皮秒激光器，脉冲宽度为8皮秒，波长为1064nm，刻划功率为5.5W，单脉冲能量5.5uJ，重复频率为1000kHz，激光从镀膜玻璃膜面入射，对样品进行P3刻划，刻划速度为2m/s，将掺铝氧化锌层，本征氧化锌，硫化镉层以及铜铟镓硒层完全刻断，露出钼层，完成组件刻划，刻划示意图如图5所示，刻线的宽度为47μm，刻划后的效果如图8所示。从图8可见组件的死区宽度为196μm。采用自动追踪系统保证P3划线与P1划线平行。
实施例二
步骤一，与实施例1相同。
步骤二，P1刻划：采用皮秒激光器，脉冲宽度8皮秒，波长为532nm，刻划功率为2.5W，单脉冲能量为31.25μJ，重复频率为80kHz，激光从镀膜基底背面入射，对样品进行P1刻划，刻划速度为2m/s。刻划后刻线的宽度为35μm，刻线内Mo层被完全清除，露出钠钙玻璃表面。
步骤三～步骤八，与实施例1相同。
实施例三
步骤一，与实施例1相同。
步骤二，P1刻划：采用纳秒激光器，脉冲宽度10纳秒，波长为1064nm，刻划功率为3.2W，单脉冲能量为40uJ，重复频率为80kHz，激光从镀膜基底背面入射，对样品进行P1刻划，刻划速度为2m/s。刻划后刻线的宽度为33μm，刻线内Mo层被完全清除，露出钠钙玻璃表面。
步骤三～步骤八，与实施例1相同。
实施例四
步骤一，与实施例1相同。
步骤二，P1刻划：采用亚纳秒激光器，脉冲宽度800皮秒，波长为532nm，刻划功率为0.65W，单脉冲能量为8.13uJ，重复频率为80kHz，激光从镀膜基底背面入射，对样品进行P1刻划，刻划速度为2m/s。刻划后刻线的宽度为30μm，刻线内Mo层被完全清除，露出钠钙玻璃表面。
步骤三～步骤八，与实施例1相同。
实施例五
步骤一～步骤五，与实施例1相同。
步骤六：P2刻划：亚纳秒激光器，脉冲宽度为800皮秒，波长为532nm，刻划功率为2.1W，单脉冲能量为5uJ,重复频率为100kHz，激光从镀膜玻璃膜面入射，对样品进行P2刻划，刻划速度为0.2m/s，刻划后的P2刻线宽度为48μm，刻划后电池的本征氧化锌、硫化镉以及铜铟镓硒完全刻断，露出钼层。采用自动追踪系统保证P2划线与P1划线平行。
步骤七～步骤八，与实施例1相同。
尽管本发明的内容已经通过上述优选实施例作了详细的介绍，但应当认识到上述的描述不应该被认为是本发明的限制。本领域技术人员阅读了上述内容后，对于本发明的多种修改和替代都将是显而易见的。因此，本发明的保护范围应由所附的权利要求来限定。

Claims (10)

1.一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，其特征在于：
使用激光器对在钠钙玻璃上制备的钼薄膜进行刻划，形成第一道刻线(P1)；在完成第一道刻线(P1)刻划的钼层上依次进行以下膜层制备：铜铟镓硒层、硫化镉层、本征氧化锌层，完成上述膜层制备后，使用激光器进行刻划，形成第二道刻线(P2)；在完成第二道刻线(P2)刻划后的本征氧化锌层上制备掺铝氧化锌层，使用激光器再次进行刻划，形成第三道刻划线(P3)。
2.根据权利要求1所述的全激光刻划方法，其特征在于：
所述第二道刻线(P2)、第三道刻线(P3)均与第一道刻线(P1)平行。
3.一种大面积铜铟镓硒薄膜太阳能电池组件的全激光刻划方法，其特征在于，所述方法包括以下步骤：
(1)在钠钙玻璃基体上制备钼层；
(2)采用激光器一对钼层进行刻划，将钼层完全刻断，形成第一道刻线(P1)；所述第一道刻线(P1)一直刻划到玻璃基底表面，使第一道刻线(P1)两侧的子电池完全绝缘；
(3)在钼层上制备铜铟镓硒膜层；
(4)在铜铟镓硒膜层上制备硫化镉层；
(5)在硫化镉层上制备本征氧化锌层；
(6)采用激光器二进行刻划，将本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断，露出钼层，形成第二道刻线(P2)；所述的第二道刻线(P2)将本征氧化锌层、硫化镉层以及铜铟镓硒层三层薄膜完全刻断，并且不损伤钼层表面；所述第二道刻线(P2)与第一道刻线(P1)刻线保持平行。
(7)在本征氧化锌层上制备掺铝氧化锌层；
(8)采用激光器三进行刻划，将掺铝氧化锌层、本征氧化锌层、硫化镉层以及铜铟镓硒层同时刻断，露出钼层，形成第三道刻线(P3)，从而完成太阳能电池组件子电池的内联；所述P3刻线需要将掺铝氧化锌层、本征氧化锌层、硫化镉层、以及铜铟镓硒层四层薄膜完全刻断，并且不损伤钼层表面；所述第三道(P3)和第一道刻线(P1)、第二道刻线(P2)保持平行。
4.根据权利要求3所述的全激光刻划方法，其特征在于：
所述的激光器一、激光器二、激光器三均为纳秒激光器、亚纳秒激光器或者皮秒激光器中的一种。
5.根据权利要求4所述的全激光刻划方法，其特征在于：
其中所述纳秒激光器为光纤脉冲激光器，激光波长为1064nm、532nm和355nm中的一种，或者兼具两种以上波长模式，光束模式为TEM00，光束质量<1.3，脉冲宽度为1纳秒～600纳秒，单脉冲能量为1微焦～2000微焦，脉冲重复频率为1KHz～1000KHz，平均功率0～25瓦特；所述亚纳秒激光器为半导体激光器，激光波长为1064nm、532nm和355nm中的一种，或者兼具两种以上波长模式，光束模式是TEM00，光束质量<1.3，脉冲宽度为600皮秒～2000皮秒，单脉冲能量为1微焦～300微焦，脉冲重复频率为10KHz～100KHz，平均功率为0～3瓦特；所述皮秒激光器为光纤脉冲激光器，激光波长为1064nm、532nm和355nm中的一种，或者兼具两种以上波长模式，光束模式是TEM00，光束质量<1.3，脉冲宽度为小于10皮秒，单脉冲能量为1微焦～40微焦，脉冲重复频率为1Hz～1000KHz，平均功率为0～6瓦特。
6.根据权利要求3所述的全激光刻划方法，其特征在于：
所述的第一道刻线(P1)既可以采用从膜面入射的方式也可以采用从玻璃面入射的方式；所述激光从膜面入射是指激光光束位于薄膜镀面的方向，通过聚焦透镜聚焦到薄膜表面；所述激光从玻璃面入射是指激光光束位于薄膜镀膜面的反方向，也就是位于基片的底部，通过聚焦透镜将激光穿过玻璃基底聚焦到薄膜上。
7.根据权利要求3所述的全激光刻划方法，其特征在于：
所述的第二道刻线(P2)、第三道刻线(P3)均采用从膜面入射的方式。
8.根据权利要求3所述的全激光刻划方法，其特征在于：
在步骤(1)中，所述钼层厚度为600纳米～1200纳米。
9.根据权利要求3或8任一项权利要求所述的全激光刻划方法，其特征在于：
在步骤(3)中，所述铜铟镓硒层厚度为1.0～2.0微米；所述硫化镉层厚度为30～80纳米；所述本征氧化锌膜层厚度为50～150纳米。
10.根据权利要求3或9任一项权利要求所述的全激光刻划方法，其特征在于：
在步骤(5)中，掺铝氧化锌膜层厚度为300～1000纳米。
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