CN113964220B - 一种突触器件及实现其红外光调制突触行为的方法 - Google Patents
一种突触器件及实现其红外光调制突触行为的方法 Download PDFInfo
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Abstract
本发明涉及一种突触器件及实现其红外光调制突触行为的方法。所述器件包括透明衬底、透明导电层、透明绝缘层、铜锌锡硫硒介质层、源电极和漏电极;所述透明衬底,作为器件硬支撑和光输入窗口;所述透明导电层形成于透明衬底上方,作为器件施加电信号的端子;所述透明绝缘层形成于透明导电层上方;所述铜锌锡硫硒介质层形成于透明绝缘层上方并与之接触良好,作为沟道材料使用;所述源电极和漏电极设置于铜锌锡硫硒上方并与之接触良好。本发明通过透明衬底引入激励光,实现红外光对源漏电导的调制,不仅有利于光电协同控制源漏电导,还进一步拓展突触器件响应的光谱范围。
Description
技术领域
本发明涉及微电子器件技术领域,特别是涉及一种突触器件及实现其红外光调制突触行为的方法,从而模拟生物突触在光刺激下的条件反射行为。
背景技术
为了突破传统冯·诺依曼构架计算体系的局限性,消除存储墙等多种效应对计算性能产生的不良影响,人们试图在单个电子器件上模拟突触行为,以便获得更利于模拟计算的类脑计算芯片。人体大脑对光、力、热等多种刺激的响应是通过对应感受机构传递信号而获得,研发对刺激信号进行直接响应的器件有利于对多种刺激信号的直接响应和处理。此外,人眼对于可见光可以做出判断,但是对于非可见光(如:红外、紫外等)很难做出响应。因此,开发能够对非可见光响应的光电突触非常有必要。
发明内容
有鉴于此,本发明的目的在于提供一种突触器件及实现其红外光调制突触行为的方法,用于模拟生物突触在光刺激下的条件反射行为,突破人眼的光谱响应范围。
为了实现上述目的,本发明采用如下技术方案:
一种突触器件,包含透明衬底、透明导电层、透明绝缘层、铜锌锡硫硒介质层、源电极和漏电极。
所述透明衬底,作为器件支撑层。
所述透明导电层形成于透明衬底上,作为器件施加电信号的端子。
所述透明绝缘层形成于透明导电层上。
所述铜锌锡硫硒介质层形成于透明绝缘层上并与所述透明绝缘层接触,作为沟道材料使用。
所述源电极形成于铜锌锡硫硒介质层上并与所述铜锌锡硫硒介质层接触;
所述漏电极形成于铜锌锡硫硒介质层上并与所述铜锌锡硫硒介质层接触。
进一步的,所述透明衬底作为光输入窗口。
进一步的,所述透明衬底,作为器件硬支撑层。
进一步的,所述的透明衬底的材料为玻璃、金刚石、石英、氧化铝、氧化镁、萤石或明矾。
进一步的,所述的透明导电层的材料为氧化铟锡、氧化铟镓锌或氧化铝锌。
进一步的,透明绝缘层的材料为氧化铪、氧化镁、氧化钆、氧化硅、氧化镧或氧化锆。
进一步的,所述源电极和漏电极的材料各自独立地选自透明导电材料、金属、金属合金、导电金属化合物或其任意组合。优选地所述源电极和漏电极的材料各自独立地选自透明导电材料、金属、金属合金或导电金属化合物中的一种。透明导电材料为ITO、IGZO或AZO。金属为Al、Ti、Ta、Cu、Pt、Au、W、Ni或Ag。所述金属合金为Pt/Ti、Ti/Ta、Cu/Ti、Cu/Au、Cu/Al、Ti/W或Al/Zr。所述导电金属化合物为TiN、TiW、TaN、WSi、AZO、ITO或FTO。
进一步的,所述铜锌锡硫硒介质的化学分子式为Cu2-xZn1+x Sn(SySe1-y)4,其中0<x<0.3,0<y<1。优选地,所述铜锌锡硫硒介质的化学分子式为Cu1.92Zn1.08Sn(S0.8Se0.2)4。
进一步的,所述铜锌锡硫硒介质层的厚度为2nm-1.5μm。
进一步的,透明导电层的厚度为2nm-300nm。透明绝缘层的厚度为2nm-300nm。所述源电极的厚度为2nm-300nm。漏电极的厚度为2nm-300nm。
如上任一项所述突触器件的制作方法,包括以下步骤:
步骤S1:在透明衬底上通过溅射、等离子增强化学气相沉积(PECVD)、金属有机物化学气相沉积(MOCVD)、原子层沉积(ALD)或蒸发的方式制作透明导电层;
步骤S2:在透明导电层上通过溅射、PECVD、MOCVD、ALD或蒸发的方式制作透明绝缘层;
步骤S3:在透明绝缘层上,采用先旋涂后硒化退火的方式制备铜锌锡硫硒介质层;
步骤S4:在铜锌锡硫硒上制作源电极和漏电极。
本发明还提供一种采用如上所述的突触器件或者如上所述的方法制作的突触器件实现红外光调制突触行为的方法,采用红外光脉冲和电脉冲共同作用模拟生物突触在光刺激下的条件反射行为。
进一步的,采用红外光脉冲作用于透明导电层,源漏间电导发生连续变化。
进一步的,所述采用红外光脉冲和电脉冲共同作用模拟生物突触在光刺激下的条件反射行为包括以下步骤:首先,采用系列红外光脉冲照射透明导电层,光脉冲撤除后源漏间趋稳电流为I1;随后,采用系列电脉冲刺激透明导电层,电脉冲撤除后源漏间趋稳电流为I2;接着,采用上述系列红外光脉冲和系列电脉冲共同刺激透明导电层,两刺激撤除后源漏间趋稳电流为I3;最后,再次用上述系列红外光脉冲照射透明导电层,光脉冲撤除后源漏间趋稳电流为I4,此时,I4>I1。
进一步的,所述红外光的波长为900nm-1100nm。
进一步的,所述的电脉冲的参数为:0.1V-3V、0.1Hz-500MHz电压脉冲。
本发明还提供一种采用上述突触器件实现红外光刺激下条件反射行为的方法。首先,采用固定波长的系列红外光脉冲照射透明导电层,光脉冲撤除后源漏间趋稳电流为I1;随后,采用系列电脉冲刺激透明导电层,电脉冲撤除后源漏间趋稳电流为I2;接着,采用该固定波长的系列红外光脉冲和系列电脉冲共同刺激透明导电层,两刺激撤除后源漏间趋稳电流为I3;最后,再次用该固定波长的系列红外光脉冲照射透明导电层,光脉冲撤除后源漏间趋稳电流为I4。此时,I4>I1。
进一步的,所述红外光的波长为900nm-1100nm。
进一步的,所述的电脉冲的参数为:0.1V-3V、0.1Hz-500MHz电压脉冲。
本发明中,所述系列红外光脉冲照射透明导电层,所述的透明衬底作为光输入窗口,光从透明衬底入射,照射透明导电层。
本发明与现有技术相比具有以下有益效果:
本发明采用铜锌锡硫硒作为光电信号转化的介质层,光信号可以调节源漏间电导,不仅可以模拟突触行为,还可以模拟红外光刺激下条件反射行为,突破人眼的光谱响应范围。
附图说明
图1是本发明的结构示意图;
图2是本发明一实施例中光刺激对源漏间电流的影响;
图3是本发明一实施例中器件对970nm红外光刺激条件反射行为的模拟。
图中,01-源电极;02-铜锌锡硫硒介质层;03-漏电极;04-透明绝缘层;05-透明导电层;06-透明衬底。
具体实施方式
下面结合附图及实施例对本发明做进一步说明。
请参照图1,本发明提供一种电子突触器件,包含透明衬底06、透明导电层05、透明绝缘层04、铜锌锡硫硒介质层02、源电极01和漏电极03。
所述透明衬底06,作为器件硬支撑层和光输入窗口。
所述透明导电层05形成于透明衬底06上,作为器件施加电信号的端子。
所述透明绝缘层04形成于透明导电层05上。
所述铜锌锡硫硒介质层02形成于透明绝缘层04上并与所述透明绝缘层04接触良好,作为沟道材料使用。
所述源电极01形成于铜锌锡硫硒介质层02上并与所述铜锌锡硫硒介质层02接触良好。
所述漏电极03形成于铜锌锡硫硒介质层02上并与所述铜锌锡硫硒介质层02接触良好。
在本发明的一实施例中,所述的透明衬底06的材料为玻璃、金刚石、石英、氧化铝、氧化镁、萤石或明矾。
在本发明的一实施例中,所述的透明导电层05为2nm-300nm的氧化铟锡、氧化铟镓锌或氧化铝锌。
在本发明的一实施例中,所述的透明绝缘层04为2nm-300nm的氧化铪、氧化镁、氧化钆、氧化硅、氧化镧或氧化锆。
在本发明的一实施例中,所述的铜锌锡硫硒介质层02厚度为2nm-1.5μm。
在本发明的一实施例中,所述的源电极01厚度为2nm-300nm。所述的漏电极03厚度为2nm-300nm。
在本发明一实施例中,所述源电极01和漏电极03的材料各自独立地选自透明导电材料、金属、金属合金或导电金属化合物中的一种。透明导电材料为ITO、IGZO或AZO;金属为Al、Ti、Ta、Cu、Pt、Au、W、Ni或Ag;所述金属合金为Pt/Ti、Ti/Ta、Cu/Ti、Cu/Au、Cu/Al、Ti/W或Al/Zr;所述导电金属化合物为TiN、TiW、TaN、WSi、AZO、ITO或FTO。
在本发明一实施例中,进一步的,所述铜锌锡硫硒介质的化学分子式为Cu2-xZn1+ xSn(SySe1-y)4,其中0<x<0.3,0<y<1。
在本发明一实施例中,所述电子突触器件的制作方法,包括以下步骤:
步骤S1:在透明衬底06上通过溅射、PECVD、MOCVD、ALD或蒸发的方式制作透明导电层05;
步骤S2:在透明导电层05上通过溅射、PECVD、MOCVD、ALD或蒸发的方式制作透明绝缘层04;
步骤S3:在透明绝缘层04上,采用先旋涂后硒化退火的方式制备铜锌锡硫硒介质层02;
步骤S4:在铜锌锡硫硒介质层上制作源电极01和漏电极03。
本发明还提供一种采用上述突触实现970nm光刺激下条件反射行为的方法。首先,采用970nm波长的系列红外光脉冲照射透明导电层05,光脉冲撤除后源漏间趋稳电流为I1;随后,采用系列电脉冲刺激透明导电层05,电脉冲撤除后源漏间趋稳电流为I2;接着,采用970nm波长系列红外光脉冲和系列电脉冲共同刺激透明导电层05,两刺激撤除后源漏间趋稳电流为I3;最后,再次用970nm波长的系列红外光脉冲照射透明导电层05,光脉冲撤除后源漏间趋稳电流为I4。此时,I4>I1。
实施例1:
一种电子突触器件,其结构如图1所示,由透明衬底06、厚度为300纳米的透明导电ITO层、厚度为30nm的氧化铪层、厚度为750nm的Cu1.92Zn1.08Sn(S0.8Se0.2)4介质层、厚度为100nm的Ti金属层作为源电极01和厚度为100nm的Ti金属层作为漏电极03构成。其中,厚度为300纳米的透明导电ITO层为透明导电层05。厚度为30nm的氧化铪为透明绝缘层04。厚度为750nm的Cu1.92Zn1.08Sn(S0.8Se0.2)4介质为铜锌锡硫硒介质层02。
如上所述的电子突触器件制备方法包括如下步骤:
1、选取透明衬底,所述透明衬底06为1mm厚的玻璃。所述透明衬底06作为器件硬支撑层和光输入窗口。
2、在透明衬底06上,通过磁控溅射制备厚度为300nm的所述透明导电ITO层,所述透明导电ITO层作为器件施加电信号的端子。
3、随后,在所述透明导电ITO层上,采用原子层沉积法制备厚度为30nm的氧化铪层。
4、接着,将Cu、Zn、Sn、S和Se粉(Cu、Zn、Sn、S和Se粉加入量分别是1.10mmol、0.76mmol、0.72mmol、2.7mmol、0.3mmol,mmol是“毫摩尔”)一起溶于乙二胺(5ml)和乙二硫醇(0.5ml)中,并使其在70摄氏度搅拌90分钟。在此溶液中,加入1ml由乙醇胺、巯基乙酸和乙二醇甲醚(三者摩尔比率为1:1:2)的混合液接着搅拌30分钟获得含铜、锌、锡、硫、硒的溶液。再将溶液(20滴溶液)滴在氧化铪层表面(2cm*2cm的片子),并将其550摄氏度硒化15分钟获得厚度为750nm的所述Cu1.92Zn1.08Sn(S0.8Se0.2)4介质层。所述Cu1.92Zn1.08Sn(S0.8Se0.2)4介质层与所述氧化铪层接触良好,作为沟道材料使用。
5、采用钢制硬掩模,在Cu1.92Zn1.08Sn(S0.8Se0.2)4介质层上通过溅射法溅射厚度为100nm的Ti金属层制备所述源电极01,所述源电极01与所述Cu1.92Zn1.08Sn(S0.8Se0.2)4介质层接触良好。采用钢制硬掩模,在Cu1.92Zn1.08Sn(S0.8Se0.2)4介质层上通过溅射法溅射厚度为100nm的Ti金属层制备所述漏电极03,所述漏电极03与所述Cu1.92Zn1.08Sn(S0.8Se0.2)4介质层接触良好。
对本实施例中的晶体管进行电学测试(采用半导体参数测试仪Keithley4200scs进行转移特性曲线测试,即在透明导电层上施加电脉冲测试源漏之间的响应电流),图2是管子经不同波长光照射产生的源漏电流。测试时候,光从透明衬底入射,电压施加于透明导电层(即,透明导电层或底电极),漏电极施加读取电压而源电极接地。实验发现,不同波长光都可以通过透明衬底入射而调节源漏间电导,体现出光栅调控源漏电导的效应。图3是器件对970nm红外光刺激条件反射行为的模拟。测试中,我们首先施加10个970nm波长的光脉冲,光激发产生了源漏间电流,撤除光脉冲后源漏电流趋近于0(图3(a));随后,采用10个0.1V电脉冲施加于透明电极(图上的透明导电层即是透明电极),电脉冲同样产生了源漏电流的响应,在撤除电脉冲后源漏电流趋稳于4.76nA(图3(b));接着,在下方(下方就是衬底下面)同时施加上述光脉冲和电脉冲,激励产生了更高的源漏电流响应,在撤除两个脉冲激励后源漏电流趋于5.66nA(图3(c));最后,再次使用10个970nm波长的光脉冲从下往上照射,撤除光照后的源漏电流趋稳于0.36nA(图3(d))。这说明,器件由原先对光信号不响应(I1=0)变成具有良好响应(I4=0.36nA)。该过程很好模拟了生物体对光的条件反射行为。
本发明未详细阐述部分属于本领域技术人员的公知技术。以上所述仅为本发明较佳实施例,在不脱离本发明设计精神的前提下,凡依本发明申请专利范围所做的均等变化与修饰,皆属于本发明涵盖的范围。
Claims (9)
1.一种突触器件,其特征在于:包含透明衬底、透明导电层、透明绝缘层、铜锌锡硫硒介质层、源电极和漏电极;
所述透明衬底,作为器件支撑层;
所述透明导电层形成于透明衬底上,作为器件施加电信号的端子;
所述透明绝缘层形成于透明导电层上;
所述铜锌锡硫硒介质层形成于透明绝缘层上并与所述透明绝缘层接触,作为沟道材料使用;
所述源电极形成于铜锌锡硫硒介质层上并与所述铜锌锡硫硒介质层接触;
所述漏电极形成于铜锌锡硫硒介质层上并与所述铜锌锡硫硒介质层接触;
所述铜锌锡硫硒介质的化学分子式为Cu2-xZn1+x Sn(SySe1-y)4,其中0<x<0.3,0<y<1。
2.根据权利要求1所述的一种突触器件,其特征在于:所述源电极和漏电极的材料各自独立地选自金属、金属合金、导电金属化合物或其任意组合。
3.根据权利要求2所述的一种突触器件,其特征在于:所述金属为Al、Ti、Ta、Cu、Pt、Au、W、Ni或Ag;所述金属合金为Pt/Ti、Ti/Ta、Cu/Ti、Cu/Au、Cu/Al、Ti/W或Al/Zr;所述导电金属化合物为TiN、TiW、TaN、WSi、AZO、ITO或FTO。
4.根据权利要求1所述的一种突触器件,其特征在于:所述铜锌锡硫硒介质层的厚度为2nm-1.5μm。
5.根据权利要求1所述的一种突触器件,其特征在于:透明导电层的厚度为2nm-300nm;透明绝缘层的厚度为2nm-300nm。
6.如权利要求1-5任一项所述的一种突触器件的制作方法,其特征在于:包括以下步骤:
步骤S1:在透明衬底上通过溅射、PECVD、MOCVD、ALD或蒸发的方式制作透明导电层;
步骤S2:在透明导电层上通过溅射、PECVD、MOCVD、ALD或蒸发的方式制作透明绝缘层;
步骤S3:在透明绝缘层上,采用先旋涂后硒化退火的方式制备铜锌锡硫硒介质层;
步骤S4:在铜锌锡硫硒介质层上制作源电极和漏电极;
所述铜锌锡硫硒介质的化学分子式为Cu2-xZn1+x Sn(SySe1-y)4,其中0<x<0.3,0<y<1。
7.一种采用如权利要求1-5任一项所述的突触器件或者如权利要求6所述的方法制作的突触器件实现红外光调制突触行为的方法,其特征在于,采用红外光脉冲和电脉冲共同作用模拟生物突触在光刺激下的条件反射行为。
8.根据权利要求7所述的方法,其特征在于,所述采用红外光脉冲和电脉冲共同作用模拟生物突触在光刺激下的条件反射行为包括以下步骤:首先,采用系列红外光脉冲照射透明导电层,光脉冲撤除后源漏间趋稳电流为I1;随后,采用系列电脉冲刺激透明导电层,电脉冲撤除后源漏间趋稳电流为I2;接着,采用上述系列红外光脉冲和系列电脉冲共同刺激透明导电层,两刺激撤除后源漏间趋稳电流为I3;最后,再次用上述系列红外光脉冲照射透明导电层,光脉冲撤除后源漏间趋稳电流为I4,此时,I4>I1。
9.根据权利要求7所述的方法,其特征在于,采用红外光脉冲作用于透明导电层,源漏间电导发生连续变化。
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