WO2016175818A1 - Têtes d'impression avec memristances - Google Patents

Têtes d'impression avec memristances Download PDF

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Publication number
WO2016175818A1
WO2016175818A1 PCT/US2015/028431 US2015028431W WO2016175818A1 WO 2016175818 A1 WO2016175818 A1 WO 2016175818A1 US 2015028431 W US2015028431 W US 2015028431W WO 2016175818 A1 WO2016175818 A1 WO 2016175818A1
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WO
WIPO (PCT)
Prior art keywords
metal alloy
electrode
printhead
examples
oxidizing
Prior art date
Application number
PCT/US2015/028431
Other languages
English (en)
Inventor
Ning GE
Xiao Song LIU
Zhen Yi LI
Ser Chia KOH
Original Assignee
Hewlett-Packard Development Company, L.P.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett-Packard Development Company, L.P. filed Critical Hewlett-Packard Development Company, L.P.
Priority to PCT/US2015/028431 priority Critical patent/WO2016175818A1/fr
Priority to TW105102358A priority patent/TW201706140A/zh
Publication of WO2016175818A1 publication Critical patent/WO2016175818A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14088—Structure of heating means
    • B41J2/14112—Resistive element
    • B41J2/14129—Layer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14072—Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J29/00—Details of, or accessories for, typewriters or selective printing mechanisms not otherwise provided for
    • B41J29/38—Drives, motors, controls or automatic cut-off devices for the entire printing mechanism
    • B41J29/393—Devices for controlling or analysing the entire machine ; Controlling or analysing mechanical parameters involving printing of test patterns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/13—Heads having an integrated circuit

Definitions

  • Imaging devices can include printers having printheads capable of depositing ink on a substrate. Imaging devices can also include memory components, such as memristors, to store data. Memristors are devices that can be programmed to different resistive states by applying a programming energy, such as a voltage.
  • FIG. 1 is a block diagram of an example imaging device
  • FIG. 2 is a diagram of an example inkjet printing system including an inkjet printhead assembly and an ink supply assembly;
  • FIG. 3 is a diagram of an example integrated circuit to implement the example printhead assembly of FIG. 2;
  • FIG. 4A is a diagram of an example of a stage in a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4B is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4A, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4C is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4B, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4D is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4C, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4E is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4D, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4F is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4E, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4G is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4F, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4H is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4G, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4I is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4H, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4J is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4I, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4K is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4J, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4L is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4K, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 4M is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4L, of a process of manufacturing the integrated circuit of FIG. 3;
  • FIG. 5 is a conceptual diagram of a cross-sectional of an example printhead.
  • FIG. 6 is a flowchart of an example method of manufacturing a printhead with a memristor. DETAILED DESCRIPTION
  • Imaging devices may include printheads (e.g., disposable integrated printheads (IPH) or permanent printheads with off-axis ink supplies), printers, or copiers. Imaging devices also may include memory. There are many different types of memory including volatile and non-volatile memory. Volatile memory may require power to maintain its data and includes random-access memory (RAM), dynamic random access memory (DRAM), and synchronous dynamic random access memory (SDRAM), among others.
  • RAM random-access memory
  • DRAM dynamic random access memory
  • SDRAM synchronous dynamic random access memory
  • Non-volatile memory may provide persistent data by retaining stored data when not powered and may include flash memory, read only memory (ROM), Electrically Erasable Programmable ROM (EEPROM), Erasable Programmable ROM (EPROM), and resistance variable memory such as phase change random access memory (PCRAM), resistive random access memory (RRAM), and magnetoresistive random access memory (MRAM), among others.
  • flash memory read only memory
  • EEPROM Electrically Erasable Programmable ROM
  • EPROM Erasable Programmable ROM
  • PCRAM phase change random access memory
  • RRAM resistive random access memory
  • MRAM magnetoresistive random access memory
  • EPROM can be incorporated into imaging devices.
  • counterfeiting activity more secure authentication and anti-counterfeit tools having a greater storage capacity are sought.
  • demand for space on circuit boards is at a premium.
  • imaging devices that include memory (e.g., non-volatile memories, memristor memories, etc.).
  • memory e.g., non-volatile memories, memristor memories, etc.
  • a memristor may be a passive two-terminal circuit element that maintains a functional relationship between the time integral of current, and the time integral of voltage.
  • Such devices including memory may be used to implement anti-counterfeit technologies or to secure authentication information in the imaging devices. Examples herein may reduce production costs (e.g., reducing per-bit-cost) related to manufacturing imaging devices while improving performance and incorporating additional features (e.g., security features) into such imaging devices.
  • imaging devices disclosed herein may be configured to store data associated with identification information, authentication information, cloud-based printing, market data, information, customer-appreciated value (CAV) functions, or data.
  • Examples disclosed herein provide feasible, cost-effective and highly manufacturable structures to form a printhead on a silicon area of suitable size (e.g., a relatively small area comparable to the space available on the printhead) to implement a bank of memory bits to store identification (ID) information and provide authentication.
  • the memristor that is formed on the printhead is provided with an ID line to store identification information for authentication purposes. Further, the formed ID line can be used to receive and store security or authentication data.
  • Such security or authentication data may be used to identify a corresponding printhead (or print cartridge) as an authentic product from a specific manufacture (e.g., an authentic brand-name print cartridge).
  • the ID line can be useful for manufacturers to distribute parts that are verifiable as authentic manufacturer parts. Such verifiable authenticity of parts can aid in efforts to combat counterfeiting of after-market parts that may be of poorer quality and can sometimes damage machines or decrease performance of machines in which the counterfeit parts are installed.
  • the ID line may store encryption/decryption data (e.g., security keys) for use in secure printing that involves, just prior to printing, decrypting data sent to a printer in an encrypted format.
  • FIG. 1 depicts an example imaging device 100. While FIG. 1 illustrates the imaging device 100 with a permanent printhead, examples are not so limited.
  • the imaging device 100 may include a printing apparatus having an integrated printhead (e.g., a disposable cartridge), or other printer or copier.
  • the imaging device 100 can be coupled or otherwise in communication with a host system 102 such as a computer or processor.
  • the imaging device 100 may include a controller 104, an ink supply device 106 having a memory 107, a power supply 108, and an integrated printhead assembly 1 10.
  • printhead assembly 1 10 may be integrally coupled to the imaging device 100.
  • printhead assembly 1 10 is, for example, a disposable printer cartridge
  • printhead assembly 1 10 may be removably coupled to printing apparatus 100.
  • ink supply device 106 may be fluidly coupled to printhead assembly 1 10 to enable ink to be selectively provided to the printhead assembly 1 10.
  • printhead assembly 1 10 may include a processing driver head 1 12 and a memory (e.g., on-chip memory) 1 14.
  • Processing driver head 1 12 may include a data processor 1 16 and a driver head 1 18.
  • memory 1 14 may include an ID line to store authentication or security data.
  • memory 1 14 may be implemented using a memristor integrally formed in or printhead assembly 1 10.
  • the memristor can be integrally formed within or on the printhead assembly 1 10 using surfaces or structures (e.g., conductive materials) of the printhead.
  • a portion of the memristor itself can include one or more material(s) of an otherwise functional printhead. Examples disclosed herein may be produced using a n-type metal oxide semiconductor (NMOS) process, a complementary metal oxide semiconductor (CMOS) process, a bipolar complementary metal oxide semiconductor (BiCMOS), a Bipolar-CMOS-DMOS (BCD) process or any other process of making printheads or semiconductors.
  • NMOS n-type metal oxide semiconductor
  • CMOS complementary metal oxide semiconductor
  • BiCMOS bipolar complementary metal oxide semiconductor
  • BCD Bipolar-CMOS-DMOS
  • Examples disclosed herein may be used to manufacture an integrated circuit (IC) chip (e.g., 2.5mm x 2.5mm size chips, 5x5mm size chips, etc.) or an IC die on a printhead using an anion-based bipolar memristor based on a metal oxide system.
  • IC integrated circuit
  • an oxidizing metal alloy material of the printhead may be oxidized to form an active region of the memristor.
  • Power supply 108 may provide power to controller 104, printhead assembly 1 10 or processing driver head 1 12.
  • controller 104 can receive data from host system 102.
  • the data may be authentication or security data to be stored in an ID line or the data may be print data.
  • Controller 104 may process the data into printer control information or image data that is provided to ink supply device 106 or printhead assembly 1 10 to efficiently control printing apparatus 100.
  • controller 104 may store received security data into an ID line as part of a one time programing (OTP) process.
  • OTP one time programing
  • the security data may be useful for anti- counterfeiting data features to, for example, confirm that an ink cartridge including printhead assembly 1 10 is an authentic part.
  • the security data may be used to implement secure printing based on data received at the printing system in an encrypted format.
  • Memory 107 and memory 1 14 may be used to store any type of data.
  • memory 107 and memory 1 14 may store ink supply specific data, ink identification data, ink characterization data, ink usage data, etc.
  • Memory 107 and memory 1 14 may also store printhead specific data, printhead identification data, warranty data, printhead characterization data, printhead usage data, authentication data, anti- counterfeiting data, etc.
  • memory 107, the memory 1 14, or both may be written to at the time of manufacturing, during the operation of printing apparatus 100, or both.
  • FIG. 2 depicts an example inkjet printing system 220 including an inkjet printhead assembly 210 and an ink supply assembly 222.
  • inkjet printing system 220 may include a mounting assembly 224, a media transport assembly 226, a controller 204, and a power supply 208 that may provide power to the various electrical components of inkjet printing system 220.
  • Inkjet printhead assembly 210 may include a memory (e.g., on-chip memory) 214, one or more printhead die(s) 230, and one or more nozzle(s) 232. Memory 214 and a printhead die 230 may be operably coupled to the controller 204.
  • a memory e.g., on-chip memory
  • Memory 214 and a printhead die 230 may be operably coupled to the controller 204.
  • printhead die 230 may eject drops of ink through nozzle 232 toward a print medium 234 so as to print onto print medium 234.
  • Printhead 230 may include a fluid ejection device, and print media 234 may be any suitable material such as, for example, paper, card stock, transparencies, Mylar, fabric, etc.
  • nozzles 232 may be organized in one or more columns or arrays that eject ink to produce characters, symbols, graphics or images on print medium 234 as inkjet printhead assembly 210 and print medium 234 are moved relative to one another.
  • printhead assembly 220 may be used to eject ink, liquids, fluids, and other flowable materials.
  • Ink supply assembly 222 may include a reservoir 236 for storing ink that is to be provided to the printhead assembly 210.
  • the ink supply assembly 222 may include a one-way ink delivery system that provides ink to inkjet printhead assembly 210.
  • ink supply assembly 222 may include a recirculating ink delivery system, wherein a portion (e.g., a first portion) of the ink provided to printhead assembly 210 is consumed during printing and another portion (e.g., a second portion) of the ink provided to printhead assembly 210 is returned to reservoir 236 or ink supply assembly 222.
  • inkjet phnthead assembly 210 and ink supply assembly 222 may be housed together in the same physical structure, such as in an inkjet cartridge or pen.
  • ink supply assembly 222 may be separate from inkjet phnthead assembly 210 and may provide ink to inkjet phnthead assembly 210 via a coupling or an interface connection (e.g., a supply tube).
  • reservoir 236 may be removed, replaced, or refilled.
  • reservoir 236 may include a local reservoir located within the cartridge or a larger reservoir located outside of the cartridge.
  • the larger reservoir which may be removed, replaced or refilled, may be fluidly coupled to the ink supply of the smaller local reservoir and may refill the ink supply of the smaller local reservoir.
  • mounting assembly 224 may position inkjet phnthead assembly 210 relative to media transport assembly 226, and media transport assembly 226 may position print medium 234 relative to inkjet phnthead assembly 210.
  • a print zone 238 may be defined adjacent to nozzles 232 between inkjet phnthead assembly 210 and print medium 234.
  • inkjet phnthead assembly 210 may include a scanning type phnthead assembly.
  • mounting assembly 224 may include a carriage that moves inkjet phnthead assembly 210 relative to print medium 234 to enable scanning.
  • inkjet phnthead assembly 210 may include a non-scanning type phnthead assembly.
  • mounting assembly 224 may fix inkjet phnthead assembly 210 relative to media transport assembly 226, and media transport assembly 226 may position or move print medium 234 relative to inkjet phnthead assembly 210.
  • controller 204 may include a processor or firmware to communicate with and control inkjet phnthead assembly 210, mounting assembly 224, and media transport assembly 226. For instance, controller 204 may receive data from a host system. The received data may then be sent to inkjet printing system 220 along with electronic information, infrared information, optical information, and information transfer path information via controller 204. In some examples, the data can be associated with a document or file to be printed, print job commands, or command parameters.
  • FIG. 3 depicts an example integrated circuit 340 that may be used to implement printhead assembly 1 10, 210, or memory 1 14, 214 illustrated in FIG. 1 and FIG. 2.
  • the integrated circuit illustrated in FIG. 3 may be implemented with NMOS based on a front end of line process (FEOL) or any other suitable process such as CMOS, BICMOS, BCD, etc.
  • FEOL front end of line process
  • integrated circuit 340 may be incorporated into a printhead (e.g., printhead silicon) 330 and can include a substrate material (e.g., a first material, a P-type silicon substrate, or an N-type silicon substrate) 342 including doped regions 344 (e.g., N+ doping to decrease resistivity), a gated oxide material 346 (e.g., a second material) and an insulating material (e.g., a third material, such as a polysilicon insulating material) 348.
  • Gate oxide material 346 may be located between substrate material 342 and insulating material 348.
  • integrated circuit 340 may include an interlayer dielectric (ILD) material (e.g., a fourth material) 350 and conductive materials (e.g., fifth and sixth materials) 352, 354. In some example, there may be only one of conductive material 352 and 354.
  • ILD interlayer dielectric
  • conductive materials 352, 354 may include metal or metal alloys. However, examples are not so limited, and conductive materials 352, 354 can include other materials capable of permitting the flow of electric charges. As illustrated in FIG. 3, some portions of ILD material 350 may be in contact with substrate material 342, some portions of conductive material 352 may be in contact with substrate material 342, other portions of conductive material 352 may be in contact with ILD material 350, and conductive material 354 may be in contact with conductive material 352.
  • the ILD material 350 may include borophosphosilicate glass (BPSG), undoped silicate glass (USG), or both and may be used as a metal-oxide- semiconductor field effect transistor (MOSFET) for logic or a power field effect transistor (PowerFET) for integrated circuit 340.
  • BPSG borophosphosilicate glass
  • USG undoped silicate glass
  • MOSFET metal-oxide- semiconductor field effect transistor
  • PowerFET power field effect transistor
  • Conductive material 352 may include a metal such as an aluminum-copper alloy (e.g., aluminum copper (AICu) or aluminum copper silicon (AlCuSi)), and conductive material 354 may include titanium nitride (TiN), tantalum nitride (TaN), niobium nitride (NbN), hafnium nitride (HfN), zirconium nitride (ZrN), ruthenium oxide (RuO2), iridium oxide (lrO2), aluminum (Al), tantalum (Ta), titanium (Ti), copper (Cu), cobalt (Co), nitrogen (Ni), niobium (Nb), molybdenum (Mo), tungsten (W), hafnium (Hf), zirconium (Zr), chromium (Cr) or any other suitable metal.
  • a metal such as an aluminum-copper alloy
  • conductive material 354 may include titanium nitride (T
  • the materials including substrate 342 through conductive material 352 or the conductive material 354 may be integral to printhead assembly 1 10, 210, and one or both of the conductive materials 352, 354 may form a bottom electrode for a memristor 356.
  • the structure of substrate material 342 through conductive material 354 may be integral structures of a printhead used for printing functionality.
  • a memristor may be formed on conductive material 352, conductive material 354, or both.
  • conductive material 354 may be an oxidizing layer that is oxidized into the memristor material.
  • integrated circuit 340 may include a memristor active region with a memristive material (e.g., a seventh material, such as a metal oxide) 358 and a memristor top electrode material (e.g., second electrode, an eighth material) 360.
  • the top electrode material 360 may include a conductive material, such as a metal.
  • memristor top electrode material 360 may include other materials capable of permitting the flow of electric charges.
  • memristive material 358 may be formed by oxidizing an oxidation layer that includes an oxidizing metal alloy. The oxidizing metal alloy may oxidize to form memristive material 358, which may include a metal oxide of the oxidizing metal alloy.
  • integrated circuit 340 may include a dielectric material (e.g., a ninth material) 362, a conductive material (e.g., a tenth material) 364, a thermal inkjet resistor material (e.g., an eleventh material) 366, and a passivation material (e.g., a twelfth material) 368.
  • thermal inkjet resistor material 366 may include tantalum aluminum (TaAI), tantalum aluminum oxide (TaAIOx), tungsten silicon nitride (WSiN), tantalum silicon nitride (TaSiN), or an aluminum-copper alloy.
  • FIG. 4A to FIG. 4M are diagrams of examples of stages in a process of manufacturing the example integrated circuit 340 of FIG. 3. In some examples, the process described below of incorporating memristor memories into an on-chip printhead can occur when fabricating the integrated circuit 340 of FIG. 3. While FIG.
  • FIG. 4M depict a particular number of materials being formed and particular material(s) being formed in a particular order, the order in which any one or more of the materials are formed may be changed or the number of materials formed may be changed or both (e.g., increased, decreased, etc.).
  • FIG. 4A is a diagram of an example of a stage in a process of manufacturing the integrated circuit 340 illustrated in FIG. 3.
  • the process may begin with a substrate material 442.
  • FIG. 4B is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4A, of the process of manufacturing the integrated circuit 340 illustrated in FIG. 3.
  • a gate oxide material 446 may be deposited on substrate material 442.
  • FIG. 4C is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4B, of the process of manufacturing the integrated circuit 340 illustrated in FIG. 3.
  • FIG. 4A is a diagram of an example of a stage in a process of manufacturing the integrated circuit 340 illustrated in FIG. 3.
  • FIG. 4B is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4A, of the process of manufacturing the integrated circuit 340 illustrated in FIG. 3.
  • a gate oxide material 446 may be deposited on substrate material 442.
  • FIG. 4C is a
  • an insulating material 448 can be deposited and patterned (e.g., etched away) above substrate material 442 and gate oxide material 446. For example, a portion of the materials 446, 448 can be patterned or etched away, to remove portions of gate oxide material 446 and insulating material 448.
  • FOX field oxide
  • STI shallow trench isolation
  • DTI deep trench isolation
  • transition isolation is done through a looped transistor design.
  • gate oxide material 446 can be formed on substrate material 442
  • insulating material 448 can be formed on gate oxide material 446, as illustrated in FIG. 4C.
  • FIG. 4D is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4C, of the process of manufacturing integrated circuit 340 illustrated in FIG. 3.
  • an in-situ doping or implanting process can be used to provide first material 442 with conductive doped regions 444 (e.g., a doping of N+ to create a very low resistivity in a range).
  • Conductive doped regions 444 may provide electrically conductive pathways for electrons to flow between, for example, separate structures of gate oxide material 446.
  • spacers (not illustrated) can be deposited adjacent to conductive doped regions 444 and gate oxide material 446.
  • lightly doped drains (not illustrated) can be deposited adjacent to conductive doped regions 444.
  • FIG. 4E is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4D, of the process of manufacturing integrated circuit 340 illustrated in FIG. 3.
  • ILD material 450 can be formed or deposited on substrate material 442.
  • FIG. 4F is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4E, of the process of manufacturing integrated circuit 340 illustrated in FIG. 3.
  • the patterned structures of gate oxide material 446 and insulating material 448 may be formed.
  • ILD material 450 may be contact patterned or etched away using, for example, a photo lithography process to form the patterned structures of ILD material 450.
  • FIG. 4G is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4F, of the process of manufacturing integrated circuit 340 illustrated in FIG. 3.
  • conductive materials 452, 454 may be deposited on ILD material 450 and substrate material 442.
  • conductive material 454 may be formed of TiN TaN, NbN, HfN, ZrN, RuO2, lrO2, Al, Ta, Ti, Cu, Co, Ni, Nb, Mo, W, Hf, Zr, or Cr.
  • AlCuSi may be used as a bottom electrode for the memristor 356 illustrated in FIG. 3.
  • FIG. 4H is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4G, of the process of manufacturing integrated circuit 340 illustrated in FIG. 3.
  • An oxidation layer may be deposited on conductive material 452 or conductive material 454 or both.
  • the oxidation layer may include an oxidizing metal alloy, such as a binary metal alloy.
  • the oxidizing metal alloy may include aluminum and tantalum.
  • the oxidation layer may be oxidized to form (e.g., grow) a memristive material 458 of a memristor active region.
  • the memristive material 458 may be formed by performing thermal oxidation, and exposing the oxidizing metal alloy to oxidizing agents (e.g., air, O2, H2O, CO2, etc.) at elevated temperatures (e.g., 100-400°C or higher).
  • thermal oxidation may be performed on the oxidizing metal alloy using a furnace oxidation process.
  • thermal oxidation may be performed using a rapid thermal processing (RTP) method, including rapid thermal oxidation (RTO) and/or rapid thermal annealing (RTA).
  • RTP rapid thermal processing
  • RTO rapid thermal oxidation
  • RTA rapid thermal annealing
  • memristive material 458 may be formed by performing plasma oxidation, and exposing the oxidizing metal alloy to oxygen plasma at ambient or elevated temperatures. Also, memristive material 458 may be formed by performing ozone oxidation, and exposing the oxidizing metal alloy to ozone at ambient or elevated temperatures. Furthermore, other oxidation processes may be used such as exposing the oxidizing metal alloy to oxidizing liquids such as H2O2. In some examples, the memristive material 458 may be TiOx or TaOx and may have a thickness of between about, for example, a few nanometers to a dozen nanometers.
  • memristive material 458 may include a binary oxide, such TaOxAIOx or TaAIOx. Furthermore in some examples, memristive material 458 may include a ternary oxide. For instance, the memristive material 458 may include TaAICuOx. In another example, memristive material 458 may include AlOxSiOyCuOz or other complex oxides.
  • FIG. 4I is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4H, of the process of manufacturing integrated circuit 340 illustrated in FIG. 3.
  • a memristor top electrode 460 may be deposited on the memristive material 458.
  • memristor top electrode 460 can be formed using Ta or TaAI.
  • FIG. 4J is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4I. As illustrated in FIG. 4J, memristive material 458 or the memristor top electrode material 460 or both may be patterned or etched using a photo lithography process.
  • FIG. 4K is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4J, of the process of manufacturing integrated circuit 340 illustrated in FIG. 3.
  • a dielectric material 462 may be deposited, patterned, or etched on ILD material 450, conductive material 452, conductive material 454, and memristor top electrode material 460.
  • FIG. 4L is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4K.
  • a conductive material 464 may be formed on dielectric material 462, conductive material 454, and memristor top electrode material 460.
  • conductive material 464 and a thermal inkjet resistor material 466 may be patterned or etched to form bond pad openings.
  • FIG. 4M is a diagram of an example of a stage, subsequent to the stage illustrated in FIG. 4L, of the process of manufacturing integrated circuit 340 illustrated in FIG. 3.
  • a thermal inkjet resistor material 466 may be formed on conductive material 464.
  • thermal inkjet resistor material 466 may include a dual material including a high sheet resistive material (e.g., TaAI, TaAIOx, WSiN, TaSiN) and a lower resistive material (e.g., AICu).
  • a passivation material 468 illustrated in FIG. 4L can be formed on dielectric material 462, conductive material 464, and thermal inkjet resistor material 466.
  • FIG. 5 is a conceptual diagram of a cross-sectional of an example printhead 500.
  • Printhead 500 may include a substrate 510, a first electrode 520, a memristor with an oxidation layer 530 and an active region 540, a second electrode 550, and an additional layer 560.
  • Substrate 510 may be analogous to substrate material 342 of FIG. 3, which may be, for example, a silicon substrate.
  • First electrode 520 may be coupled to substrate 510 and may carry current through printhead 500 to active region 540.
  • First electrode 520 may be analogous to conductive material 352, 354 of FIG. 3.
  • Second electrode 550 may have similar function and may be analogous to top electrode material 360 of FIG. 3.
  • the memristor may be coupled between first electrode 520 and second electrode 550.
  • the memristor may be formed with oxidation layer 530.
  • oxidation layer 530 may include an oxidizing metal alloy.
  • the oxidizing metal alloy may be oxidized to form a memristive material which then makes up active region 540.
  • Both oxidation layer 530 and active region 540 are shown as the same component in FIG. 5. This is to illustrate that active region 540 may be formed out of oxidation layer 530.
  • all of the oxidizing metal alloy is oxidized to the memristive material, while in some other examples, a portion of the oxidizing metal alloy is oxidized to the memristive material.
  • Additional layer 560 may be coupled between substrate 510 and first electrode 520. Additional layer 560 may represent the other materials and components of printhead 500, such as those illustrated in FIG. 3 and in the manufacturing process illustrated in FIG. 4A to FIG. 4M. In some examples, additional layer 560 may include a gated oxide layer coupled to substrate 510 and a polysilicon layer coupled to the gated oxide layer.
  • FIG. 6 is a flowchart of an example method 600 for manufacturing printheads with memristors.
  • method 600 may include forming a printhead body having a first electrode.
  • the first electrode can include conductive material 352 or 354 as illustrated in FIG. 3.
  • the method 600 may include coupling an oxidation layer having an oxidizing metal alloy with the first electrode.
  • components may be coupled by forming an electrical connection between the components.
  • the oxidation layer may be coupled to the first electrode by forming a direct, surface contact or by other forms of physical connection.
  • the method 600 may include forming a memristor active region by oxidizing the oxidizing metal alloy to form a memristive material.
  • performing oxidation to form the memristive material can include performing a furnace oxidation process, as described in relation to FIG. 4A to FIG. 4M.
  • performing thermal oxidation can include performing a rapid thermal processing method.
  • the method 600 may include coupling a second electrode with the memristor active region. Additionally, in some examples, method 600 may include other operations, such as etching the first electrode, the switching oxide material, and the second electrode, as described in relation to FIG. 4A to FIG. 4M.

Abstract

L'invention concerne la fabrication d'une tête d'impression avec une memristance qui peut comprendre la formation d'un corps de tête d'impression ayant une première électrode, le couplage d'une couche d'oxydation avec la première électrode, la formation d'une région active, et le couplage d'une seconde électrode avec la région active. La couche d'oxydation peut comprendre un alliage métallique oxydant. La région active peut être formée par oxydation de l'alliage métallique oxydant pour former un matériau memristif.
PCT/US2015/028431 2015-04-30 2015-04-30 Têtes d'impression avec memristances WO2016175818A1 (fr)

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PCT/US2015/028431 WO2016175818A1 (fr) 2015-04-30 2015-04-30 Têtes d'impression avec memristances
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050099458A1 (en) * 2003-11-12 2005-05-12 Edelen John G. Printhead having embedded memory device
US20060055745A1 (en) * 2004-09-14 2006-03-16 Fuji Xerox Co., Ltd. Piezoelectric element, liquid droplet ejection head, and liquid droplet ejection apparatus
US20060238576A1 (en) * 2005-04-25 2006-10-26 Lee Francis C Inkjet printhead chip
US20130026440A1 (en) * 2010-04-19 2013-01-31 Jianhua Yang Nanoscale switching devices with partially oxidized electrodes
US20130106930A1 (en) * 2011-10-27 2013-05-02 Perry V. Lea Printhead assembly including memory elements

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050099458A1 (en) * 2003-11-12 2005-05-12 Edelen John G. Printhead having embedded memory device
US20060055745A1 (en) * 2004-09-14 2006-03-16 Fuji Xerox Co., Ltd. Piezoelectric element, liquid droplet ejection head, and liquid droplet ejection apparatus
US20060238576A1 (en) * 2005-04-25 2006-10-26 Lee Francis C Inkjet printhead chip
US20130026440A1 (en) * 2010-04-19 2013-01-31 Jianhua Yang Nanoscale switching devices with partially oxidized electrodes
US20130106930A1 (en) * 2011-10-27 2013-05-02 Perry V. Lea Printhead assembly including memory elements

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