WO2015167495A1 - Tête d'impression avec ensemble de memristance hors puce - Google Patents

Tête d'impression avec ensemble de memristance hors puce Download PDF

Info

Publication number
WO2015167495A1
WO2015167495A1 PCT/US2014/036053 US2014036053W WO2015167495A1 WO 2015167495 A1 WO2015167495 A1 WO 2015167495A1 US 2014036053 W US2014036053 W US 2014036053W WO 2015167495 A1 WO2015167495 A1 WO 2015167495A1
Authority
WO
WIPO (PCT)
Prior art keywords
memristor
printhead
bottom electrode
assembly
switching
Prior art date
Application number
PCT/US2014/036053
Other languages
English (en)
Inventor
Ning GE
Jianhua Yang
Zhiyong Li
Max ZHANG
Original Assignee
Hewlett-Packard Development Company, L.P.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett-Packard Development Company, L.P. filed Critical Hewlett-Packard Development Company, L.P.
Priority to PCT/US2014/036053 priority Critical patent/WO2015167495A1/fr
Publication of WO2015167495A1 publication Critical patent/WO2015167495A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/17—Readable information on the head

Definitions

  • a memory assembly may be used to store data, in some examples, printing devices such as priniheads may include memory to store information relating to ink supplies, ink identification, ink characterization, ink usage, among other types of data.
  • Fig. 1 is a diagram of a printer cartridge and printhead with an off-chip memristor assembly according to one example of the principles described herein.
  • FIG. 2 is a block diagram of a printer cartridge that uses a printhead with an off-chip memristor assembly according to one example of the principles described herein,
  • FIG. 3 is a side view of an off-chip memristor assembly according to one example of the principles described herein.
  • Fig. 4 is a perspective view of a memristor device of a memristor assembly according to one example of the principles described herein.
  • Fig. 5 is a top view of an off-chip memristor assembly according to one example of the principles described herein.
  • Fig. 6 is a side view of an off-chip memristor assembly and an integrated circuit according to one example of the principles described herein,
  • Printer cartridges include memory to store information reiated to the operation of the printhead.
  • a printhead may inciude memory to store information related to the printhead, fluid, such as ink, used by the printhead, or other information relating to the use and maintenance of the printhead.
  • memory on printheads may be used to store information such as information relating to a fluid suppiy, fluid identification information, fluid characterization information, fluid usage data, among other types of fluid or imaging device reiated data. While memory usage on printheads is desirable, changing circumstances may reduce their efficacy in storing information.
  • Memristors may be used due to their non- volatility, low operational power consumption characteristics, and thei compact size. Memristors may be incorporated onto a silicon wafer during a back end of the line (BEOL) process that occurs at the end of fabrication of an integrated circuit. Such back end of the line ⁇ BEOL) processes may be expensive, specialized, and time-intensive.
  • BEOL back end of the line
  • the present disclosure describes printer cartridge and a printhead with an off-chip memristor assembly that utilize a low cost non- silicon process.
  • a memristor assembly may be formed on an electroplated substrate, such as a printhead orifice plate.
  • the memristor assembly, along with the orifice plate may then be attached to an integrated circuit via a bonding process.
  • the present specification describes an example where a memnstor assembly is used on a printhead, the off-chip memristor assembly as described herein may be used as an embedded memory device for an type of system thai uses such memory function as described herein.
  • the present disclosure describes a printhead with an off-chip memristor assembly.
  • the printhead includes a nozzle, a firing chamber to hold an amount of fluid, and an ejector to eject the amount of fluid through the nozzle.
  • the printhead aiso includes an off-chip memristor assembly.
  • the off- chip memristor assembly may include a bottom electrode and a number of switching oxides extending from the bottom electrode.
  • the memristor assembiy may aiso include a number of top electrodes extending from the number of switching oxides to align with a number of bonding pads on an integrated circuit. A portion of the bottom electrode, a switching oxide, and a top electrode may form a memristor device.
  • the bottom electrode may be a common ground for a number of memristor devices.
  • the present disclosure describes a printer cartridge with an off-chip memristor assembly.
  • the cartridge includes a fluid supply and a printhead to deposit the fluid from the fluid supply onto a surface.
  • the printhead includes a bottom electrode and a number of switching oxides protruding from the bottom electrode.
  • the off-chip memristor assembly may also include a number of top electrodes extending from the number of switching oxides to align with a number of bonding pads on an integrated circuit, A portion of the bottom electrode, a switching oxide, and a fop electrode may form a memristor device.
  • the printer cartridge may also include an integrated circuit that includes a number of bonding pads to attach the integrated circuit to the off-chip memristor assembly via the number of top electrodes.
  • a printer cartridge and printhead as described in the present disclosure may be beneficial in that if provides for a dense, fast, non-volatile, and low energ memory device for use on an imaging system.
  • the off-chip memristor assembly may be manufactured independently from an integrated circuit and may be attached at a later point in time. Such independent manufacture may reduce the cost associated with printhead fabrication.
  • a printer cartridge may refer to a device used in the ejection of ink, or other fluid, onto a print medium, in genera!
  • a printer cartridge may be a fluidic ejection device that dispenses fiuid such as ink, wax, polymers or other fluids.
  • a printer cartridge may include a printhead.
  • a printhead may be used in printers, graphic plotters, copiers and facsimile machines, in these examples, a printhead may eject ink, or another fluid, onto a medium such as paper to form a desired image or a desired three-dimensiona! geometry.
  • off-chip may indicate that a particular eiement, such as a memristor, is not integrally formed with an integrated circuit or silicon wafer.
  • the term “memristor” ' may refer to a passive two-terminal circuit element that maintains a functional relationship between the time integral of current, and the time integral of voltage.
  • a number of or similar language may include any positive number including 1 to infinity; zero not being a number, but the absence of a number.
  • Fig. 1 is a diagram of a printer cartridge (100) and printhead (101) with an off-chip memrisior assembly according to one example of the principles described herein.
  • the printer cartridge ⁇ 100 ⁇ may include a printhead (101) to carry out at least a part of the functionality of depositing fluid onto a surface.
  • the printer cartridge (100) may include a fluid supply (119) for supplying the fluid to the printhead (101) for deposition onto a surface, in some examples, the fluid may be ink.
  • the fluid may be ink.
  • tbe printer cartridge (100) may be an inkjet printer cartridge
  • t he printhead (101) may be an inkjet printhead
  • the ink may be inkjet ink.
  • the printhead (101) may include a number of components for depositing a fluid onto a surface.
  • the printhead (101) may include an ejector (120), a firing chamber (121), and a nozzle (122).
  • the nozzle (122) may be a component that includes a small opening through which fluid, such as ink, is deposited onto a surface, such as a print medium.
  • the firing chamber (121) may include a smaii amount of fluid.
  • the ejector (120) is a component that ejects fluid through the nozzle (122).
  • the ejector (120) may be a firing resisior that heats up in response to an applied voltage.
  • the printhead (101) and printer cartridge (100) may also include other components to carry out various functions related to printing. For simplicity, in Fig. 1, a number of these components and circuitry included in the printhead (101) and printer cartridge (100) are not indicated; however such components may be present in the printhead (101) and printer cartridge (100), In some examples, the printer cartridge (100) is a disposable printer cartridge.
  • the printhead (101) may of varying types.
  • the printhead (101) may be a thermal inkjet (TIJ) printhead or a piezoelectric inkjet (PIJ) printhead, among other types of printhead ( 01).
  • an "ejector'' is a mechanism for ejecting fluid through a nozzle from a firing chamber (121), where the ejector (120) may include a firing resistor or other thermal device, a piezoelectric element, or other mechanism for ejecting fluid from the firing chamber (121).
  • Fig. 2 is a block diagram of a printer cartridge (200) printer cartridge that uses a printhead (201) with an off-chip memristor assembly (202) according to one example of the principles described herein.
  • an off-chip memristor assembly (202) is a collection of memristor devices that are independent of a silicon wafer, the silicon wafer including integrated circuits and other functional components of the system, in other words, the memristor devices may not be integrally formed with such a silicon wafer.
  • the memristor assembly (202) may be formed on an orifice piate of a printer.
  • the printer cartridge (200) may be in communication with a controiiing device such that the controiling device sends instructions to the printer cartridge (200).
  • a controiiing device may send a print job to the printer cartridge (200), the print job being made up of text, images, or combinations thereof to be printed.
  • the printer cartridge (200) includes a number of components for carrying out the operations of the printer cartridge (200).
  • the printer cartridge (200) may include a printhead (201 ).
  • the printhead (201 ⁇ may carry out at least a part of the functionality of the printer cartridge (200).
  • the printhead (201) may include a number of printhead dies and a number of nozzles (Fig. 1 , 122).
  • the printhead dies may eject drops of fluid from the nozzles (Fig. 1 , 122) onto a print medium in accordanc with a received print job.
  • the printhead (201) ma include a thin metallic piece of material to form a firing chamber (Fig. 1, 121) of an inkjet printer system.
  • This thin metallic piece of material may be referred to as an orifice plate, in some examples, the orifice plate may be between 20 and 40 micrometers thick. In some examples, the orifice piate may be 100 micrometers thick.
  • the printhead (201) may include a memristor assembly (202) to store information relating to at least one of the printer cartridge (200) and the printhead (201 ).
  • the memristor assembly (202) may include a number of memristor devices formed in the printhead (201). For exam pie. as will e described in detaii beiow, the memristor devices may be formed on top of an electro-plated substrate.
  • the memristor assembly (202) may be used to store any type of data.
  • Examples of data that may be stored in the memristor assembly (202) that is formed in a printhead (201) include fluid suppiy specific data and/or fluid identification data, fluid characterization data, fluid usage data, printhead (201) specific data, printhead (201) identification data, warranty data, printhead (201) characterization data, printhead (201) usage data, authentication data, security data, Anti-Counterfeits ng data (ACF), fluid drop weight, firing frequency, initial printing position, acceleration information, and gyro information, among other forms of data, in a number of examples, the memristor assembly (202) may be written at the time of manufacturing and/or during the operation of the printer cartridge (200),
  • the printer cartridge (200) may also include a controller (203) to receive data from the controlling device and to send the data (204) onto the printhead (201).
  • the controller (203) may send data (204) such as autheniication data, security data, and print job data, in addition to other types of data (204 ⁇ to the printhead (201) to be stored on the memristor assembly (202).
  • Fig. 3 is a side view of an off-chip memristo assembly (302) according to one example of the principles described herein.
  • the off-chip memristor assembly (302) may be used in a printhead (Fig. 1, 101).
  • the memristor assembly (302) includes a bottom electrode (305).
  • the bottom electrode (305) may be shared by the memristor devices (311) of the memristor assembly (302) and may be a common ground for a number of memristor devices (311 ).
  • the bottom electrode (305) may be a substrate that provides mechanical stability to the memristor assembly (302) as well as an electrical connection between the memristor assembly (302) and other components that may attach to the bottom electrode (305). Examples of other components that attach to the bottom electrode (305) include a ground connection, a number of connection pads, a current regulator, a capacitor, a resistor, and metal traces, among other memristor assembly (302) components.
  • the bottom electrode (305) includes a substrate (310).
  • the substrate (310) may be metallic.
  • the substrate (310) may be nickel. More specifically, the substrate (310) may be an electroplated substrate.
  • a base may be subject to a physical vapor deposition process to sputter on a Iayer of metallic substances such as stainless steel and chrome.
  • the base may be constructed of glass, silicon, or other base iayer material that wouid provide mechanical rigidity to the memristor assembly (302). If the base is constructed out of glass or silicon, the thickness of the substrate may be between 200 and 600 micrometers thick.
  • the substrate (3 0) may include a coating material (306).
  • a coating material (306).
  • a iayer of another metallic substance may be deposited on the substrate (310).
  • the metallic substance may be conductive.
  • this coating material (306) include, but are not limited to palladium, gold, tantalum, rhodium, copper, platinum, titanium nitride, and tantalum nitride among other coating materials.
  • the coating material (306) may change the resistivity of the bottom electrode (305).
  • the bottom electrode (305) is an orifice plate that is used to eject ink from a thermal inkjet printer.
  • the memristor assembly (302) also includes a number of switching oxides (307) extending from the bottom electrode (305).
  • the number of switching oxides (307) may extend perpendicular to a surface of the bottom electrode (305).
  • the switching oxide (307) is an insulator between the bottom electrode (305) and the top electrodes (308).
  • the switching oxide (307) may have nominal insulation, and then during a switching event, the switching oxide (307) may switch to a second form, becoming conductive.
  • the switching oxide (307) allows the stat of the memristor devic to switch from a Sow resistive state to a high resistive state.
  • the switching oxides (307) may be formed by oxidizing the coating material (306).
  • the switching oxides ⁇ 307) may be formed by thermal oxidation, a process which exposes the coating materia! ⁇ 306) to oxidizing agents at elevated temperatures.
  • thermal oxidation processes thai may be used include a furnace oxidation process, a rapid thermal process, a rapid thermal oxidation, and a rapid thermal annealing, among other oxidation processes.
  • the switching oxides (307) are formed by performing piasma oxidation, which exposes the coating materials (308) to oxygen piasma at controlled
  • the switching oxides (307) are formed through a physicaS vapor deposition process wherein atoms or molecuies may be ejected from a target material to the conducting material ⁇ 306). For example, a target materiai is bombarded with energetic particles, in response, atoms or molecules of the target material are dislodged and built up to form the switching oxides (307). While specific examples of switching oxide (307) formation processes have been given, other oxide forming processes are also
  • the switching oxides (307) may have a thickness of between about, a few nanometers to a dozen nanometers.
  • the switching oxides (307) may be magnesium oxide, titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, iron oxide, cobait oxide, copper oxide, zinc oxide, aluminum oxide, gallium oxide, silicon oxide, germanium oxide, tin dioxide, bismuth oxide, nickel oxide, yttrium oxide, gadolinium oxide, and rhenium oxide, among other oxides.
  • the switching oxides (307) may be ternary and complex oxides such as silicon oxyniiride. The oxides presented may be formed using a number of different processes such as sputtering from an oxide target or oxidizing a deposited metal or alloy layer.
  • the mem istor assembly (302) may aiso include a number of top electrodes (308) extending from the number of switching oxides (307).
  • the number of switching oxides (307) may extend perpendicular from the bottom electrode (305).
  • the top electrodes (308) may aiso be perpendicular to the bottom electrode (305) and may extend from the switching oxides (307),
  • each switching oxide (307) may have a corresponding top electrode (308) extending therefrom.
  • the top electrodes (308) may be formed from a metallic material such as tantalum or a tantalum-aluminum alloy, or other conducting material such as titanium, titanium nitride, copper, aluminum, and gold among other metallic materials.
  • the top electrodes (308) may be formed by a metallic deposition process such as physical vapor deposition (PVD), in which a target material is vaporized, meaning atoms are dislodged from the surface of the target material. The atoms are then built up on a surface. More specifically, atoms of the target material may be built up on the surface of the switching oxides (307) to form the top electrodes (308). While specific reference is made to PVD, other processes may be used to form the fop electrodes (308).
  • PVD physical vapor deposition
  • top electrodes (208) may then be further altered via a number of processes including photolithography, lithography, and etching, among other surface altering processes.
  • the memnstor assembly (302) may include a number of memristor devices (311) that are formed of the above described components.
  • a single memristor device (311), indicated by the dashed line, may include a portion of the bottom electrode (30S), a first switching oxide (307-1) and a corresponding top electrode (308-1),
  • a number of other memristor devices (311) may also be formed from the bottom electrode (305) and the remaining switching oxides (307-2, 307-3) and top electrodes (308-3). While Fig.
  • a memristor assembly (302) with three memristor devices (311), corresponding to the three switching oxides (307-1, 307-2, 307-3) and the three corresponding top electrodes (308-1, 308-2, 308-3), a memristor assembly (302) may include any number of memristor devices (311) as defined by the number of switching oxides (307) and top electrodes (308),
  • the memristor assembly (302) may include a dielectric material ⁇ 309 ⁇ deposited on the bottom electrode (305).
  • the dielectric material (309) may insulate the conduction of electrical signals between the bottom electrode (305) and the number of top electrodes (308).
  • the dielectric materia! (309) may be silicon dioxide, silicon nitride, or silicon carbide, among other dielectrics.
  • Fig, 4 is a perspective view of a memristor device (41 ) of a memristor assembly (Fig. 2, 202) according to one example of the principles described herein.
  • the memristor assembly (Fig. 2, 202) includes a bottom electrode (405).
  • the bottom electrode (405) may be shared by a number of memristor devices (411).
  • the memristor assembly (Fig, 2, 202 ⁇ also includes a number of switching oxides (407) protruding from the bottom electrode (405) and a number of top electrodes (408) extending from, and in line with, the number of switching oxides (407).
  • a memristor assembly (Fig. 3, 302) may include a number of switching oxides (407) and a corresponding number of top electrodes (408),
  • Each memristor device (411), while sharing a bottom electrode (405) may have a switching oxide (407) and a top electrode (408 ⁇ that are distinct from the switching oxides (not shown) and top electrodes (not shown) of the other memristor devices (not shown).
  • a portion of the bottom electrode (405), a switching electrode (407), and a top electrode (408) form a single memristor device (41 ⁇ .
  • one memristor device (411 ) is indicated in Fig. 4, similar devices are formed by the bottom electrode (405) and the switching oxides (Fig. 3, 307-1 , 307-2, 307-3) and the top electrodes (Fig.
  • each distinct memristor device (411) includes a distinct switching oxide (407 ⁇ and a corresponding top electrode (408), while sharing a common bottom electrode (405) with other memristor devices (411).
  • the memristor device (411) may be a non-voiatile memory device thai retains stored information even when not powered on.
  • the memristor device (411) may seiectiveiy store data based on a resistive state of the memristor.
  • the memristor device (411) may be in a !ow resistive state indicated by a "1," or a high resistive state indicated by a "0.”
  • the memristor devices (411) of the memristor assembly (Fig. 2, 202) may form a string of ones and zeroes that will store the aforementioned data. If an analog memristor device (411) is used, there may be many different resistive states.
  • Fig, 5 is a top view of an off-chip memristor assembly (502) according to one example of the principles described herein.
  • the memristor assembly (502) may include a shared bottom electrode (505) that forms part of each memristor device (Fig. 4, 411) of th memristor assembly (502).
  • each memristor device may include a distinct switching oxide (Fig. 3, 307) extending from the bottom electrode (505) up and perpendicular to the surface of the bottom electrode (505).
  • a top electrode (508) Disposed on each switching oxide (Fig. 3, 307) is a top electrode (508).
  • a memristor device (Fig. 4, 4 1) includes a distinct top electrode (508) and a distinct switching oxide (Fig.
  • the memristor assembly (502) of Fig. 5 may include nine distinct memristor devices (Fig. 4, 411), As indicated in Fig. 5, the memristor devices ⁇ Fig. 4, 411) may be arranged as rows and columns. Whiie Fig. 5 depicts nine top electrodes (508), and as a result nine memristor devices ⁇ Fig. 4, 411), a memristor assembly (502) may include any number of memristor devices (Fig. 4, 411) and top electrodes (508).
  • Fig. 6 is a side view of an off-chip memristor assembly (602) and an integrated circuit (612) according to one example of the principles described herein.
  • the memristor assembly (602) may include a bottom electrode (605) that is shared by each memristor device (Fig. 3, 311), a number of switching oxides (not shown), a number of top electrodes (608) and a dielectric material (609).
  • the number of top electrodes (608) may attach to a number of bonding pads (613) found on the integrated circuit (612).
  • a first memristor device (Fig, 3, 311), via the first top electrode (608-1), may attach to the integrated circuit (612) via a first bonding pad (613-1) using a bonding process.
  • a second memrisior device (Fig. 3, 311), via the second top electrode (608-2), may attach to the integrated circuit (612) via a second bonding pad (613-2) using a bonding process.
  • a third memristor device ⁇ Fig, 3, 311), via the third top electrode (608-3) may attach to the integrated circuit (612) via a third bonding pad (613-3) using a bonding process.
  • a number of bonding processes may be used to attach the memrisio assembly (602) to the integrated circuit (612).
  • a gang bonding process may be used.
  • the top electrode (608) material and the bonding pad (613) material may be chosen to facilitate the bonding process.
  • the top electrodes (608) and the bonding pads (613) may be formed of gold to facilitate a gold-goid bonding process.
  • Other examples of bonding processes by which the memristor devices ⁇ Fig 3, 311) are attached to the bonding pads (613 ⁇ may include conductive adhesive bonding, and plasma-enhanced bonding, among other bonding techniques.
  • the integrated circuit may be a pre-fabricated silicon die that includes other transistors and capacitors thai may have been attached during front end of the line ⁇ FEOL ⁇ processes or back end of the Sine ⁇ 8EOL ⁇ processes.
  • the memristor assembly (602) may be designed to form a one-to-one addressing structure with the integrated circuit (612).
  • an integrated circuit (612) may include a number of addressing units (614).
  • Each addressing unit (614) may include a number of components that allow for multiplexing and logic operations.
  • a first addressing unit (614-1) may include a source (615-1), a gate (616-1), and a drain (617-1).
  • one source (615-1), gate (616-1), and drain ⁇ 817- 1) are indicated by a reference numeral, but other addressing units (614-2, 614- 3) contain similar elements.
  • the memristor devices ⁇ Fig. 3, 311) may be designed to be individually addressed by a distinct addressing unit (614).
  • the memristor device (Fig. 3, 311 ⁇ that corresponds to ihe first top electrode (808-1) may have a corresponding first addressing unit (614-1) of the integrated circuit
  • the rnernristor device (Fig, 3, 311) that corresponds to the second top electrode (608-2) may have a corresponding second addressing unit (614-2) in the integrated circuit (612).
  • the addressing units (614) may be transistors.
  • the memristor devices (Fig. 3, 311 ) may share a one-transistor one-memristor (1T1 ) addressing structure with the addressing units (614) of the integrated circuit (612).
  • the addressing units may be diodes.
  • the memristor devices (Fig. 3, 31 1 ) may share a one-diode one-memristor (1 D1 ) addressing structure with the addressing units (614) of the integrated circuit (612).
  • the number of memristor devices (Fig. 3, 311) on a memristor assembly (602) may be less than the number of bond pads
  • a number of memristor assemblies (602) may be bonded to the integrated circuit (612 ⁇ via different groupings of different bond pads (613).
  • the integrated circuit (612) may include other elements, such as a contact (618) to connect an addressing unit (614) to a bonding pad (613). For simplicity, a single contact (618) is indicated in Fig. 6.
  • the integrated circuit (612) may also include an inter-layer dielectric (619) to isolate a substrate of the integrated circuit (612) from the bonding pads (613).
  • the present specification allows for a base, such as an orifice plate, to be formed via an electroplating process.
  • a number of switching oxides (Fig. 3, 307 ⁇ may be formed on the base and a number of top electrodes (Fig. 3, 308) may then be formed on the switching oxides (Fig. 3, 307); a portion of the orifice piate, a switching oxide (Fig. 3, 307), and a top electrode (Fig. 3, 308) making up a memristor device (Fig. 3, 311).
  • the orifice plate with memristor assembly (Fig. 2, 202) may then be attached to a pre- fabricated Silicon integrated circuit or other flexible circuit for use in a printhead (Fig. 1 , 101 ).
  • a printer cartridge (Fig. 1, 100 ⁇ and a printhead (Fig, 1 101) with an off-chip memristor assembly (Fig. 1 , 102) may have a number of advantages, including: (1 ) de-coupiing memristor manufacturing and integrated circuit manufacturing; (2) allowing flexibility for FEOL and BEOL processes; (3) simplifying manufacturing processes; (4) allowing for cost control in printer memory device manufacturing; (5) increasing storage capacity of memory used on a printhead in a reduced space; and (6) improving printhead memory performance.

Abstract

La présente invention concerne une tête d'impression avec ensemble de memristance hors puce. La tête d'impression comprend une buse, une chambre de mise à feu destinée à contenir une certaine quantité de fluide et un éjecteur destiné à éjecter ladite quantité de fluide à travers la buse. La tête d'impression comprend également un ensemble de memristance hors puce. L'ensemble de memristance hors puce comprend une électrode inférieure. Un certain nombre d'oxydes de commutation s'étend depuis l'électrode inférieure. Un certain nombre d'électrodes supérieures s'étend à partir du nombre d'oxydes de commutation afin de s'aligner avec un certain nombre de plots de connexion sur un circuit intégré. Une partie de l'électrode inférieure, un oxyde de commutation et une électrode supérieure forment un dispositif de memristance. L'électrode inférieure est une masse commune pour un certain nombre de dispositifs de memristance.
PCT/US2014/036053 2014-04-30 2014-04-30 Tête d'impression avec ensemble de memristance hors puce WO2015167495A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2014/036053 WO2015167495A1 (fr) 2014-04-30 2014-04-30 Tête d'impression avec ensemble de memristance hors puce

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/036053 WO2015167495A1 (fr) 2014-04-30 2014-04-30 Tête d'impression avec ensemble de memristance hors puce

Publications (1)

Publication Number Publication Date
WO2015167495A1 true WO2015167495A1 (fr) 2015-11-05

Family

ID=54359047

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/036053 WO2015167495A1 (fr) 2014-04-30 2014-04-30 Tête d'impression avec ensemble de memristance hors puce

Country Status (1)

Country Link
WO (1) WO2015167495A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646660A (en) * 1994-08-09 1997-07-08 Encad, Inc. Printer ink cartridge with drive logic integrated circuit
US20030081070A1 (en) * 2001-10-26 2003-05-01 Chien-Hung Liu Driver transistor structure of inkjet print head chip and the method for making the same
WO2010144097A1 (fr) * 2009-06-12 2010-12-16 Hewlett-Packard Development Company, L.P. Mémoire sur puce hiérarchique
US20130023106A1 (en) * 2010-03-12 2013-01-24 Pickett Matthew D Device having memristive memory
US20130106930A1 (en) * 2011-10-27 2013-05-02 Perry V. Lea Printhead assembly including memory elements

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646660A (en) * 1994-08-09 1997-07-08 Encad, Inc. Printer ink cartridge with drive logic integrated circuit
US20030081070A1 (en) * 2001-10-26 2003-05-01 Chien-Hung Liu Driver transistor structure of inkjet print head chip and the method for making the same
WO2010144097A1 (fr) * 2009-06-12 2010-12-16 Hewlett-Packard Development Company, L.P. Mémoire sur puce hiérarchique
US20130023106A1 (en) * 2010-03-12 2013-01-24 Pickett Matthew D Device having memristive memory
US20130106930A1 (en) * 2011-10-27 2013-05-02 Perry V. Lea Printhead assembly including memory elements

Similar Documents

Publication Publication Date Title
US6902256B2 (en) Ink jet printheads
TWI613798B (zh) 具高介電可抹除可規劃唯讀記憶體胞元之列印頭及列印機墨匣
US7758165B2 (en) Ink-jet printhead and manufacturing method thereof
CN107438522B (zh) 喷墨打印头
US8449079B2 (en) Fluid ejection device having first and second resistors
US20030224614A1 (en) Chamber having a protective layer
US9950520B2 (en) Printhead having a number of single-dimensional memristor banks
JP5615450B2 (ja) 流体吐出アセンブリ及び関連方法
EP3063009A1 (fr) Têtes d'impression sur lesquelles sont formées des mémoires
WO2016068927A1 (fr) Tête d'impression pourvue d'un certain nombre de sélecteurs enfermés partagés
US9776400B2 (en) Printhead with a number of memristor cells and a parallel current distributor
US20080002000A1 (en) Protective Layers for Micro-Fluid Ejection Devices and Methods for Depositing the Same
WO2006053221A2 (fr) Dispositif d'ejection d'un microfluide a energie ultrafaible
WO2016068833A1 (fr) Tête pourvue d'un certain nombre de dispositifs de mémoire non volatile au nitrure de silicium
WO2015167495A1 (fr) Tête d'impression avec ensemble de memristance hors puce
JP6520237B2 (ja) 液滴吐出ヘッド、液体カートリッジおよび画像形成装置
WO2016014082A1 (fr) Tête d'impression avec un certain nombre de cellules de memristance et un certain nombre de cellules de déclenchement couplées à une ligne de déclenchement partagée
US20180186151A1 (en) Alternative ground lines for inter-slot grounding
US20180022103A1 (en) Printheads with eprom cells having etched multi-metal floating gates
CN115151424A (zh) 热喷墨打印头以及包括该打印头的打印组装件和打印设备
JP2018176697A (ja) 液体吐出ヘッドのヒューズ部の切断方法、液体吐出装置
WO2016014087A1 (fr) Tête d'impression ayant un certain nombre de memristances fermées par une électrode supérieure
WO2016014085A1 (fr) Tête d'impression pourvue d'un certain nombre de memristances disposés sur des transistors à grille blindée
WO2016068872A1 (fr) Tête d'impression pourvue de memristances à structures différentes
WO2016068841A1 (fr) Tête d'impression pourvue d'un certain nombre de memristances à rapport de résistance élevé

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14890950

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14890950

Country of ref document: EP

Kind code of ref document: A1