WO2016068833A1 - Tête pourvue d'un certain nombre de dispositifs de mémoire non volatile au nitrure de silicium - Google Patents

Tête pourvue d'un certain nombre de dispositifs de mémoire non volatile au nitrure de silicium Download PDF

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Publication number
WO2016068833A1
WO2016068833A1 PCT/US2014/062343 US2014062343W WO2016068833A1 WO 2016068833 A1 WO2016068833 A1 WO 2016068833A1 US 2014062343 W US2014062343 W US 2014062343W WO 2016068833 A1 WO2016068833 A1 WO 2016068833A1
Authority
WO
WIPO (PCT)
Prior art keywords
printhead
silicon nitride
fluid
switching layer
volatile memory
Prior art date
Application number
PCT/US2014/062343
Other languages
English (en)
Inventor
Zhiyong Li
Ning GE
Jianhua Yang
Max ZHANG
Original Assignee
Hewlett-Packard Development Company, L.P.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett-Packard Development Company, L.P. filed Critical Hewlett-Packard Development Company, L.P.
Priority to PCT/US2014/062343 priority Critical patent/WO2016068833A1/fr
Publication of WO2016068833A1 publication Critical patent/WO2016068833A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14072—Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
    • B41J2/04541—Specific driving circuit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
    • B41J2/0455—Details of switching sections of circuit, e.g. transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/015—Ink jet characterised by the jet generation process
    • B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
    • B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
    • B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
    • B41J2/0458—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on heating elements forming bubbles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17526—Electrical contacts to the cartridge
    • B41J2/1753—Details of contacts on the cartridge, e.g. protection of contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically

Definitions

  • a memory system may be used to store data.
  • imaging devices such as printheads may include memory to store information relating to printer cartridge identification, security information, and authentication information, among other types of information.
  • FIG. 1 is a diagram of a printing system according to one example of the principles described herein.
  • FIG. 2A is a diagram of a printer cartridge and printhead with a number of silicon nitride non-volatile memory devices according to one example of the principles described herein.
  • Fig. 2B is a cross sectional diagram of a printer cartridge and printhead with a number of silicon nitride non-volatile memory devices according to one example of the principles described herein.
  • FIG. 3 is a block diagram of a printer cartridge that uses a printhead with a number of silicon nitride non-volatile memory devices according to one example of the principles described herein.
  • Fig. 4 is a cross sectional view of a silicon nitride non-volatile memory device according to one example of the principles described herein.
  • Fig. 5 is a cross sectional view of a silicon nitride non-volatile memory device on a printhead according to one example of the principles described herein.
  • FIG. 6 is a flowchart of a method for forming a silicon nitride nonvolatile memory device according to one example of the principles described herein.
  • Memory devices are used to store information for a printer cartridge.
  • Printer cartridges include memory to store information related to the operation of the printhead.
  • a printhead may include memory to store information related 1) to the printhead; 2) to fluid, such as ink, used by the printhead; or 3) to the use and maintenance of the printhead.
  • Other examples of information that may be stored on a printhead include information relating to 1) a fluid supply, 2) fluid identification information, 3) fluid characterization information, and 4) fluid usage data, among other types of fluid or imaging device related data. More examples of information that may be stored include identification information, serial numbers, security information, feature information, and Anti-Counterfeiting (ACF) information, among other types of information. While memory usage on printheads is desirable, changing circumstances may reduce their efficacy in storing information.
  • ACF Anti-Counterfeiting
  • a switching event i.e. the switching of a memristor between resistance states
  • a printer may include an application-specific integrated circuit (ASIC) that supplies a voltage of 15.5 volts (V).
  • ASIC application-specific integrated circuit
  • the switching voltage for a memristor may be much lower, for example between 1-3 V.
  • the significantly greater supplied voltage may over-stress the memristor and the memristor device may be short circuited and destroyed due to a hard breakdown.
  • a memristor may use an oxide material in the switching layer which may include acquisition of specific machinery which performs physical vapor deposition (PVD) to deposit the oxide onto the bottom electrode.
  • PVD physical vapor deposition
  • the PVD manufacturing equipment may be expensive and contribute substantially to the production cost of the printhead circuitry.
  • the present disclosure describes a printhead with a memristor that alleviates these and other complications. More specifically, the present disclosure describes a printhead and printer cartridge that use memristors that have a high switching voltage. The higher switching voltage may make the memristor of the present specification more compatible with certain systems such as printers which supply a higher voltage to engage the memristor. Moreover, the memristors of the present disclosure may simplify the manufacturing process operations to further reduce the manufacturing cost of the memristor. [0017] The memristors of the present specification may include a bottom electrode and a top electrode.
  • a switching layer Disposed between the electrodes is a switching layer that is formed of a nitride material, such as silicon nitride (SiN x ), which may produce a higher switching voltage.
  • a nitride material such as silicon nitride (SiN x )
  • the thickness of the silicon nitride switching layer may be manipulated to produce the desired switching voltage, such as a higher voltage to match the voltage which is output by the printer ASIC.
  • the material properties of the silicon nitride material also help to raise the switching voltage of the memristor. The switching voltage may thus be adjusted based on the characteristics of the silicon nitride switching layer.
  • silicon nitride is a material that may already be used in the circuitry of the printhead, and therefore the manufacturing equipment and material may already be present in the manufacturing facility. This may eliminate the need for a manufacturer to purchase additional expensive equipment, and may further reduce the cost of the memristor.
  • the present disclosure describes a printhead with a number of silicon nitride non-volatile memory devices.
  • the printhead includes a number of nozzles to deposit an amount of fluid onto a print medium.
  • Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening.
  • the printhead also includes a number of non-volatile memory devices.
  • Each non-volatile memory device includes a bottom electrode, a switching layer disposed on a top surface of the bottom electrode, and a top electrode disposed on a top surface of the switching layer.
  • the switching layer is a silicon nitride material.
  • the present disclosure describes a printer cartridge with a number of silicon nitride non-volatile memory devices.
  • the cartridge includes a fluid supply and a printhead to deposit fluid from the fluid supply onto a print medium.
  • the printhead includes a number of non-volatile memory devices.
  • Each non-volatile memory device includes a bottom electrode and a switching layer disposed on a top surface of the bottom electrode.
  • the switching layer is a silicon nitride material.
  • Each non-volatile memory device also includes a top electrode disposed on a top surface of the switching layer.
  • the present disclosure describes a method for forming a printhead with a number of silicon nitride non-volatile memory devices. The method includes forming a bottom electrode on a substrate, depositing a switching layer on a top surface of the bottom electrode, in which the switching layer is a silicon nitride material, and forming a top electrode on a top surface of the switching layer.
  • a printer cartridge and a printhead that utilize non-volatile memory devices having a silicon nitride switching layer may be beneficial by providing a large amount of memory storage in a relatively small amount of space, as compared to existing memory devices. Additionally, the silicon nitride switching layer may allow for fine-tuning of the switching voltage of the non-volatile memory device by altering the dimensions of the switching layer. Still further, the silicon nitride non-volatile memory devices may simplify the manufacturing process by using tools which may already exist in other phases. Still further, the silicon nitride non-volatile memory devices may be less costly to manufacture by avoiding the use of thin film switching oxides.
  • a printer cartridge is meant to be understood broadly as a device used in the ejection of ink, or other fluid, onto a print medium.
  • a printer cartridge may be a fluidic ejection device that dispenses fluid such as ink, wax, polymers or other fluids.
  • a printer cartridge may include a printhead.
  • a printhead may be used in printers, graphic plotters, copiers, and facsimile machines.
  • a printhead may eject ink, or another fluid onto a medium such as paper to form a desired image or a desired three dimensional geometry.
  • the term "printer” is meant to be understood broadly as any device capable of selectively placing a fluid onto a print medium.
  • the printer is an inkjet printer.
  • the printer is a three- dimensional printer.
  • the printer is a digital titration device.
  • a fluid is meant to be understood broadly as any substance that continually deforms under an applied shear stress.
  • a fluid may be a pharmaceutical.
  • the fluid may be an ink.
  • the fluid may be a liquid.
  • the term "print medium” is meant to be understood broadly as any surface onto which a fluid ejected from a nozzle of a printer cartridge may be deposited.
  • the print medium may be paper.
  • the print medium may be an edible substrate.
  • the print medium may be a medicinal pill.
  • nonvolatile memory is meant to refer to any type of long-term persistent storage of data which retains the storage even when not powered.
  • the nonvolatile memory may be a memristor.
  • the non-volatile memory may be RAM.
  • the non-volatile memory may be flash memory.
  • the term “memristor” may refer to a passive two-terminal circuit element that maintains a functional relationship between the time integral of current and the time integral of voltage.
  • switching voltage may refer to the voltage that switches a memristor from a high resistance state to a low resistance state, from a low resistance state to a high resistance state, or combinations thereof.
  • the term "supplied voltage” may refer to a voltage supplied by a component to switch a memristor from a high resistance state to a low resistance state, from a low resistance state to a high resistance state, or combinations thereof.
  • a number of or similar language is meant to be understood broadly as any positive number including 1 to infinity; zero not being a number, but the absence of a number.
  • Fig. 1 is a diagram of a printing system (100) according to one example of the principles described herein.
  • the printing system (100) may be included on a printer.
  • the system (100) includes an interface with a computing device (102).
  • the interface enables the system (100), and specifically the processor (108), to interface with various hardware elements, such as the computing device (102), that are external and internal to the system (100).
  • Other examples of external devices include external storage devices, network devices such as servers, switches, routers, and client devices among other types of external devices.
  • the computing device (102) may be any source from which the system (100) may receive data describing a job to be executed by the controller (106) in order to eject fluid onto the print medium (126).
  • the controller (106) receives data from the computing device (102) and temporarily stores the data in the data storage device (110). Data may be sent to the controller (106) along an electronic, infrared, optical, or other information transfer path.
  • the data may represent a document and/or file to be printed. As such, data forms a job and includes job commands and/or command parameters.
  • a controller (106) includes a processor (108), a data storage device (110), and other electronics for communicating with and controlling the printhead (1 16).
  • the controller (106) receives data from the computing device (102) and temporarily stores data in the data storage device (1 10).
  • the controller (106) controls the printhead (1 16) in ejecting fluid from the nozzles (124). For example, the controller (106) defines a pattern of ejected fluid drops that form characters, symbols, and/or other graphics or images on the print medium (126). The pattern of ejected fluid drops is determined by the job commands and/or command parameters received from the computing device (102).
  • the controller (106) may be an application specific integrated circuit (ASIC), of a printer for example, which determines the level of fluid in the printhead (1 16) based on resistance values of memory devices, such as memristors, integrated on the printhead (116).
  • the ASIC may include a current source and an analog to digital converter (ADC). The ASIC converts a voltage present at the current source to determine a resistance of a memory device, and then determines a
  • Computer readable program code executed through executable instructions enables the resistance determination and the subsequent digital conversion through the ADC.
  • the processor (108) may include the hardware architecture to retrieve executable code from the data storage device (110) and execute the executable code.
  • the executable code may, when executed by the processor (108), cause the processor (108) to implement at least the functionality of ejecting fluid onto the print medium (126).
  • the executable code may, when executed by the processor (108), cause the processor (108) to implement the functionality of providing instructions to the power supply (130) such that the power supply (130) provides power to the components of the system (100).
  • the data storage device (110) may store data such as executable program code that is executed by the processor (108) or other processing device.
  • the data storage device (110) may specifically store computer code representing a number of applications that the processor (108) executes to implement at least the functionality described herein.
  • the data storage device (1 10) may include various types of memory modules, including volatile and nonvolatile memory.
  • the data storage device (1 10) of the present example includes Random Access Memory (RAM), Read Only Memory (ROM), and Hard Disk Drive (HDD).
  • RAM Random Access Memory
  • ROM Read Only Memory
  • HDD Hard Disk Drive
  • Many other types of memory may also be utilized, and the present specification contemplates the use of many varying type(s) of memory in the data storage device (110) as may suit a particular application of the principles described herein.
  • different types of memory in the data storage device (1 10) may be used for different data storage needs.
  • the processor (108) may boot from Read Only Memory (ROM), maintain nonvolatile storage in the Hard Disk Drive (HDD), and execute program code stored in Random Access Memory (RAM).
  • the data storage device (110) may include a computer readable medium, a computer readable storage medium, or a non-transitory computer readable medium, among others.
  • the data storage device (1 10) may be, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing.
  • a computer readable storage medium may include, for example, the following: an electrical connection having a number of wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
  • a computer readable storage medium may be any tangible medium that can contain, or store computer usable program code for use by or in connection with an instruction execution system, apparatus, or device.
  • a computer readable storage medium may be any non-transitory medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
  • the printing system (100) includes a printer cartridge (114) that includes a printhead (1 16) and a reservoir (1 12).
  • the printer cartridge (1 14) may be removable from the printer (104) for example, as a replaceable printer cartridge (1 14).
  • the printer cartridge (1 14) includes a printhead (116) that ejects drops of fluid through a plurality of nozzles (124) towards a print medium (126).
  • the print medium (126) may be any type of suitable sheet or roll material, such as paper, card stock, transparencies, polyester, plywood, foam board, fabric, canvas, and the like.
  • the print medium (126) may be an edible substrate.
  • the print medium (126) may be a medicinal pill.
  • the printhead (1 16) may include a number of silicon nitride non-volatile memory devices that may be incorporated into the printhead (116) at the same time as other components such as transistors.
  • Nozzles (124) may be arranged in columns or arrays such that properly sequenced ejection of fluid from the nozzles (124) causes characters, symbols, and/or other graphics or images to be printed on the print medium (126) as the printhead (1 16) and print medium (126) are moved relative to each other.
  • the number of nozzles (124) fired may be a number less than the total number of nozzles (124) available and defined on the printhead (116).
  • the printer cartridge (114) also includes a fluid reservoir (1 12) to supply an amount of fluid to the printhead (1 16).
  • fluid flows between the reservoir (112) and the printhead (116).
  • a portion of the fluid supplied to printhead (1 16) is consumed during operation and fluid not consumed during printing is returned to the reservoir (112).
  • a mounting assembly positions the printhead (1 16) relative to a media transport assembly, and the media transport assembly positioning the print medium (126) relative to the printhead (116).
  • a print zone (128) is defined adjacent to the nozzles (124) in an area between the printhead (1 16) and the print medium (126).
  • the printhead (116) is a scanning type printhead (1 16).
  • the mounting assembly includes a carriage for moving the printhead (116) relative to the media transport assembly to scan the print medium (126).
  • the printhead (116) is a non-scanning type printhead (116). As such, the mounting assembly fixes the printhead (116) at a prescribed position relative to the media transport assembly.
  • the media transport assembly positions the print medium (126) relative to the printhead (1 16).
  • Fig. 2A is a diagram of a printer cartridge (1 14) and printhead (1 16) with a number of silicon nitride non-volatile memory devices according to one example of the principles described herein.
  • the printhead (1 16) may include a number of nozzles (124).
  • the printhead (1 16) may be broken up into a number of print dies with each die having a number of nozzles (124).
  • the printhead (116) may be any type of printhead (1 16) including, for example, a printhead (116) as described in Figs. 2A and 2B.
  • the examples shown in Figs. 2A and 2B are not meant to limit the present description. Instead, various types of printheads (116) may be used in conjunction with the principles described herein.
  • the printer cartridge (114) also includes a fluid reservoir (1 12), a flexible cable (236), conductive pads (238), and a memory array (240).
  • the flexible cable (236) is adhered to two sides of the printer cartridge (1 14) and contains traces that electrically connect the memory array (240) and printhead (1 16) with the conductive pads (238).
  • the printer cartridge (1 14) may be installed into a cradle.
  • the conductive pads (238) are pressed against corresponding electrical contacts in the cradle, allowing the device to communicate with, and control the electrical functions of, the printer cartridge (114).
  • the conductive pads (238) allow the device to access and write to the memory array (240).
  • the memory array (240) may include a number of silicon nitride non-volatile memory devices.
  • the memory array (240) may contain a variety of information including the type of printer cartridge (114), the kind of fluid contained in the printer cartridge (114), an estimate of the amount of fluid remaining in the fluid reservoir (1 12), calibration data, error information, and other data.
  • the memory array (240) may include information regarding when the printer cartridge (1 14) should be maintained.
  • the memory array (240) may include other information as described below in connection with Fig. 3.
  • the memory array (240) may include a number of non-volatile memory devices to store information.
  • Such non-volatile memory devices may be memristors which are used due to their non-volatility, compact size, and simple fabrication.
  • the memristors may include a silicon nitride switching layer. Using a silicon nitride switching layer may be beneficial in that it may use a layer already used in transistor fabrication such that the memristor may be formed concurrently with transistors of the printhead (116) without significantly increasing
  • the system (Fig. 1 , 100) moves the carriage containing the printer cartridge (114) relative to a print medium (Fig. 1 , 126).
  • the printer (Fig. 1 , 104) sends electrical signals to the printer cartridge (114) via the electrical contacts in the cradle.
  • the electrical signals pass through the conductive pads (238) and are routed through the flexible cable (236) to the printhead (116).
  • the printhead (1 16) then ejects a small droplet of fluid from the reservoir (112) onto the surface of the print medium (Fig. 1 , 126).
  • the printhead (1 16) may include any number of nozzles (124).
  • a first subset of nozzles (124) may eject a first color of ink while a second subset of nozzles (124) may eject a second color of ink.
  • Additional groups of nozzles (124) may be reserved for additional colors of ink.
  • Fig. 2B is a cross sectional diagram of a printer cartridge (1 14) and printhead (1 16) with a number of silicon nitride non-volatile memory devices according to one example of the principles described herein.
  • the printer cartridge (1 14) may include a fluid supply (112) that supplies the fluid to the printhead (1 16) for deposition onto a print medium.
  • the fluid may be ink.
  • the printer cartridge (114) may be an inkjet printer cartridge
  • the printhead (1 16) may be an inkjet printhead
  • the ink may be inkjet ink.
  • the printer cartridge (114) may include a printhead (116) to carry out at least a part of the functionality of depositing fluid onto a print medium.
  • the printhead (1 16) may include a number of components for depositing a fluid onto a print medium.
  • the printhead (1 16) may include a number of nozzles (124).
  • Fig. 2B indicates a single nozzle (124), however a number of nozzles (124) are present on the printhead (1 16).
  • a nozzle (124) may include an ejector (242), a firing chamber (244), and an opening (246).
  • the opening (246) may allow fluid, such as ink, to be deposited onto a surface, such as a print medium (Fig. 1 , 126).
  • the firing chamber (244) may include a small amount of fluid.
  • the ejector (242) may be a mechanism for ejecting fluid through an opening (246) from a firing chamber (244), where the ejector (242) may include a firing resistor or other thermal device, a piezoelectric element, or other mechanism for ejecting fluid from the firing chamber (244).
  • the ejector (242) may be a firing resistor.
  • the firing resistor heats up in response to an applied voltage.
  • a portion of the fluid in the firing chamber (244) vaporizes to form a bubble.
  • This bubble pushes liquid fluid out the opening (246) and onto the print medium (Fig. 1 , 126).
  • a vacuum pressure within the firing chamber (244) draws fluid into the firing chamber (244) from the fluid supply (112), and the process repeats.
  • the printhead (116) may be a thermal inkjet printhead.
  • the ejector (242) may be a piezoelectric device. As a voltage is applied, the piezoelectric device changes shape which generates a pressure pulse in the firing chamber (244) that pushes fluid out the opening (246) and onto the print medium (Fig. 1 , 126).
  • the printhead (116) may be a piezoelectric inkjet printhead.
  • the printhead (1 16) and printer cartridge (1 14) may also include other components to carry out various functions related to fluidic ejection.
  • a number of these components and circuitry included in the printhead (1 16) and printer cartridge (1 14) are not indicated;
  • the printer cartridge (114) is removable from a printing system for example, as a disposable printer cartridge.
  • Fig. 3 is a block diagram of a printer cartridge (114) that uses a printhead (116) with a number of silicon nitride non-volatile memory devices (348) according to one example of the principles described herein.
  • the silicon nitride non-volatile memory devices (348) may be a number of memristors with silicon nitride switching layers.
  • the printer cartridge (1 14) includes a printhead (1 16) that carries out at least a part of the functionality of the printer cartridge (114).
  • the printhead (1 16) may include a number of nozzles (Fig. 1 , 124). The printhead (1 16) ejects drops of fluid from the nozzles (Fig.
  • the printhead (1 16) may also include other circuitry to carry out various functions related to printing.
  • the printhead (116) is part of a larger system such as an integrated printhead (IPH).
  • the printhead (1 16) may be of varying types.
  • the printhead (116) may be a thermal inkjet (TIJ) printhead or a piezoelectric inkjet (PIJ) printhead, among other types of printhead (1 16).
  • the printhead (1 16) includes a memory array (240) to store information relating to at least one of the printer cartridges (114) and the printhead (1 16).
  • the memory array (240) includes a number of nonvolatile memory devices (348) that may be a number of memristors with a silicon nitride switching layer formed in the printhead (116).
  • a memristor may be set to a particular resistance state. As memristors are nonvolatile, this resistance state is retained even when power is removed from the printhead (116).
  • a memristor has a metal-insulator-metal layered structure. More specifically, the memristor may include a bottom electrode (metal), a switching layer (insulator), and a top electrode (metal).
  • the number of non-volatile memory devices (348) are grouped together into a memory array (240).
  • the memory array (240) may be a cross bar array.
  • each memristor may be formed at an intersection of a first number of elements and a second number of elements, the elements forming a grid of intersecting nodes, each node defining a memristor.
  • the memory array (240) may include a number of non-volatile memory devices (348), such as memristors that form a one-to-one structure with a number of transistors.
  • an integrated circuit may include a number of addressing units. Each addressing unit may include a number of components that allow for multiplexing and logic operations.
  • the memristor may be designed to be individually addressed by a distinct addressing unit.
  • the addressing units may be transistors.
  • the memristor may share a one transistor-one memristor (1T1 M) addressing structure with the addressing units of the integrated circuit.
  • the memory array (240) may be used to store any type of data. Examples of data that may be stored in the memory array (240) include fluid supply specific data and/or fluid identification data, fluid characterization data, fluid usage data, printhead (1 16) specific data, printhead (116) identification data, warranty data, printhead (1 16) characterization data, printhead (1 16) usage data, authentication data, security data, Anti-Counterfeiting data (ACF), fluid drop weight, firing frequency, initial printing position, acceleration information, and gyro information, among other forms of data. In a number of examples, the memory array (240) is written at the time of manufacturing and/or during the operation of the printer cartridge (1 14).
  • ACF Anti-Counterfeiting data
  • the printer cartridge (1 14) may be coupled to a controller (106).
  • the controller (106) receives a control signal from an external computing device (Fig. 1 , 102).
  • the controller (106) may be an application-specific integrated circuit (ASIC), for example, a printer ASIC.
  • a computing device (Fig. 1 , 102) may send a job to the printer cartridge (1 14), the job being made up of text, images, or combinations thereof to be deposited onto a print medium (Fig. 1 , 126).
  • the controller (106) may facilitate storing information to the memory array (240). Specifically, the controller (106) may pass at least one control signal to the number of non-volatile memory devices (348).
  • the controller (106) may be coupled to the printhead (1 16), via a control line such as an identification line. Via the identification line, the controller (106) may change the resistance state of a number of memristors in the memory array (240) to effectively store information to a memory array (240). For example, the controller (106) may send data such as authentication data, security data, and job data, in addition to other types of data to the printhead (116) to be stored on the memory array (240).
  • the controller (106) may share a number of lines of communication with the printhead (1 16), such as data lines, clock lines, and fire lines.
  • lines of communication such as data lines, clock lines, and fire lines.
  • the different communication lines are indicated by a single arrow.
  • Fig. 4 is a cross-sectional view of a silicon nitride non-volatile memory device (Fig. 3, 348) according to one example of the principles described herein.
  • this non-volatile memory device may be a memristor (450) with a silicon nitride switching layer (454).
  • a memristor (450) is a non-volatile memory device (Fig. 3, 348) that retains stored information even when not powered on.
  • the memristor (450) may selectively store data based on a resistance state of the memristor (450).
  • the memristor (450) may be in a low resistance state indicated by a "1", or a high resistance state indicated by a "0".
  • the memristors (450) in a memory array (Fig. 2, 240) may form a string of ones and zeroes that will store the aforementioned data. If an analog memristor (450) is used, there may be many different resistance states.
  • a memristor (450) may switch between a low resistance state and a high resistance state during a switching event in which a sufficiently large voltage is passed through the memristor (450).
  • Each memristor (450) has a switching voltage that refers to a voltage used to switch the state of the memristor (450).
  • the memristor (450) switches states.
  • the memristor (450) of the present specification may have a higher switching voltage.
  • the memristor (450) may include a bottom electrode (452), a switching layer (454), and a top electrode (456).
  • the memristor (450) may be situated on top of a substrate (458).
  • the memristor (450) may be disposed in an inter-layer dielectric (460) that is disposed on top of the switching layer (454).
  • the inter-layer dielectric (460) is etched through to allow the top electrode (456) to be in electrical communication with the switching layer (454).
  • the inter-layer dielectric (460) may be a silicon oxide formed from tetraethyl orthosilicate (TEOS).
  • TEOS tetraethyl orthosilicate
  • the inter-layer dielectric (460) may be a silicon nitride.
  • the memristor (450) may share a number of these components with other transistors and memristors (450) on the printhead (Fig. 1 , 1 16).
  • a silicon nitride material used to form the silicon nitride switching layer (454) of the memristor may also function as an inter- layer dielectric when disposed on top of a transistor.
  • the bottom electrode (452) may be an electrical connection between the memristor (450) and other components. Examples of components that may attach to the bottom electrode (452) include a ground connection, a number of connection pads, a current regulator, a capacitor, a resistor, a transistor, and metal traces, among other memory array (Fig. 2, 240) components.
  • a switching layer (454) may be disposed on a top surface of the bottom electrode (452). The switching layer (454) may be an insulator between the bottom electrode (452) and the top electrode (456). For example, in a first state, the switching layer (454) may be insulating such that current does not readily pass from the bottom electrode (452) to the top electrode (456).
  • the memristor (450) would be in a high resistance state. Then, during a switching event, the switching layer (454) may be changed to a second state, becoming conductive. In a conductive state, the switching layer (454) causes the memristor (450) to be in a low resistance state. The switching layer (454) allows the memristor (450) to store information by changing the resistance state. In one example, a high resistance state may correspond with logical "0" and a low resistance state may correspond with logical "1".
  • the switching layer (454) may be composed of a non-oxide material such as silicon nitride (SiN x ), where x is less than or equal to 1.33.
  • a SiN x switching layer (454) allows the memristor (450) to switch between states, i.e., to switch between a low resistance state and a high resistance state through the application of a switching voltage.
  • the silicon nitride switching layer (454) may be fabricated at the same time a silicon nitride material is deposited on top of a transistor. For example, as will be described in Fig.
  • a silicon nitride material may be simultaneously deposited on top of both the bottom electrode (452) and a transistor, with the portion of the silicon nitride material that is on top of the bottom electrode (452) referred to as the switching layer (454) of the memristor (450).
  • a SiN x switching layer (454) may be deposited using plasma enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), chemical vapor deposition (CVD), and physical vapor deposition (PVD), among other formation processes.
  • PECVD plasma enhanced chemical vapor deposition
  • LPCVD low-pressure chemical vapor deposition
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • silicon nitride may be deposited onto a printhead (Fig. 1 , 116) circuit using one of these methods
  • the SiN x switching layer (454) may be deposited on the bottom electrode (452) at the same time that the silicon nitride is otherwise deposited on the printhead (Fig. 1 , 1 16).
  • formation of the SiN x switching layer (454) may use the same equipment and machinery used in the production process of the printhead (Fig. 1 , 116) circuit. This may reduce the amount of expensive equipment needed to produce the printhead (Fig. 1 , 1 16
  • Using a SiN x switching layer (454) may also be beneficial in that it may allow for a thicker switching layer (454) to be used in the memristor (450).
  • a thicker switching layer (454) combined with the material properties of SiN x , may increase the robustness of the memristor (450) such that it is not as susceptible to breakdown.
  • the switching voltage for a memristor (450) may be around 2-3V.
  • printers Fig. 1 , 104 supply a higher voltage such as 15.5 V to execute a switching event.
  • a SiN x switching layer (454) may allow for a higher switching voltage of the memristor (450) such that it is not overloaded during a switching event.
  • the switching layer (454) thickness may also be manipulated in order to achieve the desired switching voltage of the memristor (450) and to prevent overload. Still further, the combination of the material properties of the SiN x switching layer (454) and the switching layer (454) thickness serve to raise the switching voltage of the memristor (450) and increase the robustness of the memristor (450). In some examples, the switching layer (454) thickness may be between 25 and 500 Angstroms.
  • the memristor (450) also includes an inter-layer dielectric (460) disposed on a top surface of the SiN x switching layer (454).
  • the inter-layer dielectric (460) is placed to isolate the top electrode (456), bottom electrode (452), and switching layer (454).
  • the inter-layer dielectric (460) may be etched in order to create a connection between the top electrode (456) and the switching layer (454).
  • the inter-layer dielectric (460) may be formed of any insulating material, such as silicon dioxide (Si02) from a chemical vapor deposition (CVD) reaction of tetraethyl orthosilicate (TEOS).
  • the inter-layer dielectric (460) may be formed of a silicon nitride such as SiN x used to form the switching layer (454).
  • the memristor (450) also includes a top electrode (456) disposed both on a top surface of the inter-layer dielectric (460) and on a top surface of the switching layer (454) though a path etched into the inter-layer dielectric (460).
  • the top electrode (456) may be an electrical connection between the memristor (450) and other components. Examples of components that may attach to the top electrode (456) include a ground
  • connection a number of connection pads, a current regulator, a capacitor, a resistor, and metal traces, among other memory array (Fig. 2, 240) components.
  • Fig. 5 is a cross sectional view of a silicon nitride non-volatile memory device (Fig. 3, 348) on a printhead (Fig. 1 , 1 16) according to one example of the principles described herein. Specifically, Fig. 5 depicts a memristor (450) disposed on a printhead (Fig. 1 , 1 16) along with a transistor (562). For simplicity, some of the components of the memristor (450) as depicted in Fig. 4 have been omitted, however, the memristor (450) as depicted in Fig. 5 is similar to the memristor (450) depicted in Fig. 4.
  • a memristor (450) is a non-volatile memory device (Fig. 3, 348) that retains stored information even when not powered on.
  • the memristor (450) may be coupled with a number of transistors (562) to store information directly on the printhead (Fig. 1 , 116).
  • the information stored on the printhead (Fig. 1 , 116) may include fluid supply specific data and/or fluid identification data, fluid characterization data, fluid usage data, printhead (Fig. 1 , 116) specific data, printhead (Fig. 1 , 116) identification data, warranty data, printhead (Fig. 1 , 1 16) characterization data, printhead (Fig. 1 , 116) usage data, authentication data, security data, Anti-Counterfeiting data (ACF), ink drop weight, firing frequency, initial printing position, acceleration information, gyro information, and any combination thereof, among other forms of data.
  • ACF Anti-Counterfeiting data
  • the transistor (562) may include a substrate (564) on which the transistor (562) is fabricated.
  • the substrate (564) may be a p-type substrate (564) and may provide electrical connectivity between the printhead (Fig. 1 , 116) and the transistor (562) and the memristor (450).
  • a transistor (562) is an electrical component that acts as a switch by allowing electrical current to pass through the transistor (562).
  • the transistor may include a source (566), a gate (568), a gate oxide (582), and a drain (570).
  • the source (566) and drain (570) may be n-type doped regions. Note that in another example the locations of the source (566) and drain (570) may be reversed. Also note that in another example the doping of the p-type substrate (564) and the n-type source (566) and drain (570) may also be reversed.
  • the transistor (562) may also include a gate dielectric layer (572) to electrically isolate the components of the transistor (562) from one another. In some examples the gate dielectric layer (572) may act as the substrate (Fig. 4, 458) on which the memristor (450) is formed.
  • a number of openings may be etched into the gate dielectric layer (572) such that electrical vias (574) may be placed.
  • the memristor (450) and the transistor (562) may be deposited as a part of the same printhead (Fig. 1 , 116) circuitry.
  • the silicon nitride material (SiN x ) (580) that forms the switching layer (Fig. 4, 454) of the memristor (450) is also deposited across the top of the transistor (562).
  • a portion of the silicon nitride material (580) that is deposited around the sides and top of the bottom electrode (Fig. 4, 452) may be referred to as the silicon nitride switching layer (Fig. 4, 454).
  • this deposition of the silicon nitride material (580) may be performed in one operation across both devices.
  • the thickness of the SiN x material (580) may be manipulated in order to obtain the desired switching voltage in the memristor (450), without causing adverse reactions in the transistor (562).
  • the SiN x material (580) thickness may be between 25 and 500 Angstroms.
  • the inter-layer dielectric (460) described in figure 4 is deposited on a top surface of the SiN x switching material (580).
  • the inter-layer dielectric (460) is then etched in two places simultaneously, forming a void for the top electrode (456) of the memristor (450) to occupy, and a void which forms an opening in which a connection path (578) to connect the transistor (562) with the memristor (450) is formed.
  • a top connecting layer (576) may be deposited on top of the inter-layer dielectric (460), filling in the voids formed during the previous etching operation, and forming the top electrode (Fig.
  • the top connecting layer (576) may be formed from a metallic conductive material such as tantalum or tantalum-aluminum alloy, or other conducting material such as titanium, titanium nitride, copper, aluminum, and gold among other metallic materials.
  • a number of processes may be used to perform any of these depositions and form any of these layers, such as physical vapor deposition (PVD), plasma enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), or chemical vapor deposition (CVD).
  • PVD physical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • LPCVD low-pressure chemical vapor deposition
  • CVD chemical vapor deposition
  • a number of methods may be used to perform the etching processes, such as "liquid” (wet) etching, or "plasma” (dry) etching, in which a chemical agent removes the uppermost layer of the substrate that are not protected by a photoresist.
  • Fig. 6 is a flowchart of a method (600) for forming a silicon nitride non-volatile memory device (Fig. 3, 348) according to one example of the principles described herein.
  • the silicon nitride non-volatile memory device (Fig. 3, 348) may be a memristor (Fig. 4, 450) with a silicon nitride switching layer (Fig. 4, 454).
  • the method (600) may include forming (block 601) a bottom electrode (Fig. 4, 454) of the memristor (Fig. 4, 450).
  • the bottom electrode (Fig. 4, 452) may be formed on top of a substrate (Fig. 4, 458) such as the gate dielectric layer (Fig.
  • the bottom electrode (Fig. 4, 452) may be formed from a metallic material such as an aluminum-copper alloy or other metallic materials. A number of processes may be used to form the bottom electrode (Fig. 4, 452).
  • the bottom electrode (Fig. 4, 452) may be formed by a metallic deposition process such as physical vapor deposition (PVD), in which a target material is vaporized, meaning atoms are dislodged from the surface of the target material. The atoms are then built up on a surface. More specifically, atoms of the target material may be built up on the surface of a substrate to form the bottom electrode (Fig. 4, 452).
  • PVD physical vapor deposition
  • the substrate may be a polycrystalline silicate. While specific reference is made to PVD, other processes may be used to form the bottom electrode (Fig. 4, 452). Examples of such processes include a lift-off process and shadow masking deposition, among other processes.
  • the bottom electrode (Fig. 4, 452) may then be further altered via a number of processes including photolithography, lithography, and etching, among other surface altering processes.
  • the method (600) also includes depositing (block 602) a switching layer (Fig. 4, 454) on a top surface of the bottom electrode (Fig. 4, 452).
  • a silicon nitride (SiN x ) switching layer (Fig. 4, 454) may be deposited on the bottom electrode (Fig. 4, 452).
  • the SiN x switching layer (Fig. 4, 454) may be formed using PECVD, LPCVD, CVD, or PVD, among other formation processes.
  • the deposition of the silicon nitride material (Fig. 5, 580) that forms the switching layer (Fig. 4, 454) may simultaneously deposit a layer of silicon nitride over the electrical vias (Fig. 5, 574) and the gate dielectric layer (Fig.
  • a single layer of silicon nitride material (Fig. 5, 580) may be deposited to form the SiN x switching layer (Fig. 4, 454) as well as a silicon nitride layer on the transistor (Fig. 5, 562). Doing so may be beneficial as an operation that is used to form transistors (Fig. 5, 562) may also be used to form the switching layer (Fig. 4, 454) of the memristor (Fig. 4, 450).
  • the method (600) also includes forming (block 603) a top electrode (Fig. 4, 456) on a top surface of the SiN x switching layer (Fig. 4, 454).
  • the top electrode (Fig. 4, 456) may be formed from a metallic material such as tantalum or a tantalum-aluminum alloy, or other conducting material such as titanium, titanium nitride, copper, aluminum, a copper aluminum alloy, and gold among other metallic materials.
  • Forming (block 603) a top electrode (Fig. 4, 456) may include etching through an inter-layer dielectric (Fig. 4, 460) up to the SiN x switching layer (Fig. 4, 454). Forming (block 603) the top electrode (Fig. 4, 456) may be performed at the same time as a connection path (Fig. 5, 578) is formed to allow an electrical contact to be coupled with the transistor (Fig. 5, 562).
  • the inter- layer dielectric (Fig. 4, 460) may be etched down to the silicon nitride material (Fig. 5, 580).
  • the inter-layer dielectric (Fig. 4, 460) and a portion of the silicon nitride material (Fig. 5, 580) may be etched through to form the connection path (Fig. 5, 578) of the transistor.
  • the top electrode may be formed by a metallic deposition process such as physical vapor deposition (PVD), in which a target material is vaporized, meaning atoms are dislodged from the surface of the target material. The atoms are then built up on a surface. More specifically, atoms of the target material may be built up on the surface of the switching layer (Fig. 4, 454) to form the top electrode (Fig. 4, 456). While specific reference is made to PVD, other processes may be used to form the top electrode (Fig. 4, 456). Examples of such processes include a lift-off process and shadow masking deposition, among other processes.
  • the top electrode (Fig. 4, 456) may then be further altered via a number of processes including photolithography, lithography, and etching, among other surface altering processes.
  • the specification and figures describe a printer cartridge (Fig. 1 , 114), and printhead (Fig. 1 , 116) with a number of silicon nitride non-volatile memory devices (Fig. 3, 348), in which the non-volatile memory devices (Fig. 3, 348) may be a number of memristors (Fig. 4, 450) with a silicon nitride switching layer (Fig. 4, 454).
  • the printer cartridge (Fig. 1 , 114) and printhead (Fig. 1 , 116) described herein may have a number of advantages, including: (1) utilizing a low- cost process to form the switching layer (Fig. 4, 454) of the memristor (Fig.
  • the computer usable program code may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the computer usable program code, when executed via, for example, the processor (Fig. 1 , 108) of the system (Fig. 1 , 100) or other programmable data processing apparatus, implement the functions or acts specified in the flowchart and/or block diagram block or blocks.
  • the computer usable program code may be embodied within a computer readable storage medium; the computer readable storage medium being part of the computer program product.
  • the computer readable storage medium is a non-transitory computer readable medium.

Abstract

L'invention concerne une tête d'impression pourvue d'un certain nombre de dispositifs de mémoire non volatile au nitrure de silicium. Cette tête d'impression comprend un certain nombre de buses servant à déposer une quantité de fluide sur un support d'impression. Chaque buse comprend une chambre de mise à feu destinée à contenir la quantité de fluide, un orifice pour distribuer la quantité de fluide sur le support d'impression et un éjecteur pour éjecter la quantité de fluide par l'orifice. La tête d'impression comprend également un réseau de mémoire comprenant un certain nombre de dispositifs de mémoire non volatile au nitrure de silicium. Dans un exemple, les dispositifs de mémoire non volatile au nitrure de silicium sont des memristances pourvues d'une couche de commutation au nitrure de silicium. Chaque memristance comprend une électrode inférieure, une couche de commutation au nitrure de silicium disposée sur une surface supérieure de l'électrode inférieure et une électrode supérieure disposée sur une surface supérieure de la couche de commutation.
PCT/US2014/062343 2014-10-27 2014-10-27 Tête pourvue d'un certain nombre de dispositifs de mémoire non volatile au nitrure de silicium WO2016068833A1 (fr)

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WO2017210260A1 (fr) * 2016-05-31 2017-12-07 Nike Innovate C.V. Procédé et appareil pour imprimer des structures tridimensionnelles avec des informations d'image
US11351775B2 (en) 2019-02-06 2022-06-07 Hewlett-Packard Development Company, L.P. Integrated circuits including customization bits
US11433664B2 (en) 2019-02-06 2022-09-06 Hewlett-Packard Development Company, L.P. Writing a nonvolatile memory to programmed levels

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US20130278656A1 (en) * 2012-04-19 2013-10-24 Alexander Govyadinov Determining an Issue with an Inkjet Nozzle Using an Impedance Difference
WO2013162553A1 (fr) * 2012-04-25 2013-10-31 Hewlett-Packard Development Company, L.P. Memristances non linéaires
US20140167042A1 (en) * 2011-07-14 2014-06-19 Jianhua Yang Memristors having mixed oxide phases

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WO2017210260A1 (fr) * 2016-05-31 2017-12-07 Nike Innovate C.V. Procédé et appareil pour imprimer des structures tridimensionnelles avec des informations d'image
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US11584084B2 (en) 2016-05-31 2023-02-21 Nike, Inc. Method and apparatus for printing three-dimensional structures with image information
US11351775B2 (en) 2019-02-06 2022-06-07 Hewlett-Packard Development Company, L.P. Integrated circuits including customization bits
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US11731419B2 (en) 2019-02-06 2023-08-22 Hewlett-Packard Development Company, L.P. Integrated circuits including customization bits

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