WO2016014083A1 - Tête d'impression pourvue d'un certain nombre de memristances à oxyde vertical comportant une couche diélectrique sacrificielle - Google Patents

Tête d'impression pourvue d'un certain nombre de memristances à oxyde vertical comportant une couche diélectrique sacrificielle Download PDF

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Publication number
WO2016014083A1
WO2016014083A1 PCT/US2014/048272 US2014048272W WO2016014083A1 WO 2016014083 A1 WO2016014083 A1 WO 2016014083A1 US 2014048272 W US2014048272 W US 2014048272W WO 2016014083 A1 WO2016014083 A1 WO 2016014083A1
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WO
WIPO (PCT)
Prior art keywords
printhead
oxide
dielectric layer
memristor
bottom electrode
Prior art date
Application number
PCT/US2014/048272
Other languages
English (en)
Inventor
Ning GE
Jianhua Yang
Zhiyong Li
R. Stanley Williams
Original Assignee
Hewlett-Packard Development Company, L.P.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett-Packard Development Company, L.P. filed Critical Hewlett-Packard Development Company, L.P.
Priority to PCT/US2014/048272 priority Critical patent/WO2016014083A1/fr
Publication of WO2016014083A1 publication Critical patent/WO2016014083A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14072—Electrical connections, e.g. details on electrodes, connecting the chip to the outside...
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14016—Structure of bubble jet print heads
    • B41J2/14088—Structure of heating means
    • B41J2/14112—Resistive element
    • B41J2/14129—Layer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17526—Electrical contacts to the cartridge
    • B41J2/1753—Details of contacts on the cartridge, e.g. protection of contacts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/17—Ink jet characterised by ink handling
    • B41J2/175—Ink supply systems ; Circuit parts therefor
    • B41J2/17503—Ink cartridges
    • B41J2/17543—Cartridge presence detection or type identification
    • B41J2/17546—Cartridge presence detection or type identification electronically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01—Embodiments of or processes related to ink-jet heads
    • B41J2202/03—Specific materials used

Definitions

  • a memory system may be used to store data.
  • imaging devices such as printheads may include memory to store information relating to printer cartridge identification, security information, and authentication information, among other types of information.
  • FIG. 1 is a diagram of a printing system according to one example of the principles described herein.
  • FIG. 2A is a diagram of a printer cartridge with a number of vertical oxide memristors having a sacrificial dielectric layer according to one example of the principles described herein.
  • FIG. 2B is a cross sectional diagram of a printer cartridge with a number of vertical oxide memristors having a sacrificial dielectric layer according to one example of the principles described herein.
  • FIG. 3 is a block diagram of a printer cartridge that uses a printhead with a number of vertical oxide memristors having a sacrificial dielectric layer according to one example of the principles described herein.
  • Figs. 4A and 4B are views of a vertical oxide memristor having a sacrificial dielectric layer according to one example of the principles described herein.
  • FIG. 5 is a flowchart of a method for forming a vertical oxide memristor having a sacrificial dielectric layer according to one example of the principles described herein.
  • Figs. 6A-6K are diagrams illustrating the formation of a vertical oxide memristor having a sacrificial dielectric layer according to one example of the principles described herein.
  • Memory devices are used to store information for a printer cartridge.
  • Printer cartridges include memory to store information related to the operation of the printhead.
  • a printhead may include memory to store information related 1) to the printhead; 2) to fluid, such as ink, used by the printhead; or 3) to the use and maintenance of the printhead.
  • Other examples of information that may be stored on a printhead include information relating to 1) a fluid supply, 2) fluid identification information, 3) fluid characterization information, and 4) fluid usage data, among other types of fluid or imaging device related data. More examples of information that may be stored include identification information, serial numbers, security information, feature information, Anti-Counterfeiting (ACF) information, among other types of information. While memory usage on printheads is desirable, changing circumstances may reduce their efficacy in storing information.
  • ACF Anti-Counterfeiting
  • manufacturer may desire to store more information on a memory device.
  • Memristors may be used due to their non-volatility, low operational power consumption characteristics, and their compact size.
  • a memristor selectively stores data based on a resistance state of the memristor. For example, a memristor may be in a low resistance state indicated by a "1 ,” or a high resistance state indicated by a "0.” Memristors may form a string of ones and zeroes that will store the aforementioned data. If an analog memristor is used, there may be many different resistance states.
  • a memristor may switch between a low resistance state and a high resistance state during a switching event in which a voltage is passed to the memristor.
  • Each memristor has a switching voltage that refers to a voltage used to switch the state of the memristors.
  • the memristors switches state.
  • the switching voltage is largely based on the size of the memristor. For example, a larger memristor may use a larger voltage to execute a switching event. While memristors may be beneficial as memory storage devices, their use presents a number of complications.
  • a smaller memristor may lead to a lower switching current and takes up less space on an integrated circuit.
  • space on a computing device may be at a premium and it may therefore be desirable to reduce the size of memristor elements.
  • the ability to reduce the size of the memristor may be constrained by the width of the wire electrodes coupled to the memristor.
  • the lithographic and etching processes may connote a dimension that represents a smallest feature size that may be achieved for the memristor device. Any reduction in size past this dimension would result in a large capital investment as well as new complex lithographic and etching processes.
  • a memristor that alleviates these, and other, complications. More specifically a memristor according to the present specification uses a sacrificial dielectric layer to form a vertical switching oxide. Doing so removes the lithographic and etching processes and allows for a smaller memristor to be formed.
  • the present disclosure describes a printhead with a number of vertical oxide memristors having a sacrificial dielectric layer.
  • the printhead includes a number of nozzles to deposit an amount of fluid onto a print medium.
  • Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening.
  • the printhead also includes a memristor array having a number of memristors.
  • Each memristor includes a bottom electrode disposed on top of a substrate, a vertical switching oxide abutting the bottom electrode and disposed on top of the substrate, a sacrificial dielectric layer abutting the vertical switching oxide and disposed on top of the substrate, and a top electrode abutting the vertical switching oxide and disposed on top of the sacrificial dielectric layer.
  • the present disclosure describes a printer cartridge with a number of vertical oxide memristors having a sacrificially-formed dielectric layer.
  • the cartridge includes a fluid supply and a printhead to deposit fluid from the fluid supply onto a print medium.
  • the printhead includes a memristor array with a number of memristors.
  • Each memristor includes a bottom electrode disposed on top of a substrate, a vertical switching oxide abutting the bottom electrode and disposed on top of the substrate, a sacrificially-formed dielectric layer abutting the vertical switching oxide and disposed on top of the substrate, and a top electrode abutting the vertical switching oxide and disposed on top of the sacrificially-formed dielectric layer.
  • the present specification describes a method for forming a vertical oxide memristor having a sacrificial dielectric layer.
  • the method includes forming a bottom electrode disposed on a top surface of a substrate, depositing a sacrificial dielectric layer on the bottom electrode and a top surface of the substrate, and forming a top electrode on a top surface of the sacrificial dielectric layer.
  • the top electrode is in planar orientation relative to the bottom electrode.
  • the method also includes removing a portion of the sacrificial dielectric layer to maintain a portion of the sacrificial dielectric layer underneath the top electrode and forming a vertical switching oxide between the bottom electrode and the top electrode.
  • a printer cartridge and a printhead that utilize a vertical oxide memristor having a sacrificial dielectric layer may be beneficial by providing a simplified and cost-effective manufacturing process to produce a memristor that is not constrained by lithographic and etching process restrictions.
  • a printer cartridge may refer to a device used in the ejection of ink, or other fluid, onto a print medium.
  • a printer cartridge may be a fluidic ejection device that dispenses fluid such as ink, wax, polymers or other fluids.
  • a printer cartridge may include a printhead.
  • a printhead may be used in printers, graphic plotters, copiers and facsimile machines.
  • a printhead may eject ink, or another fluid, onto a medium such as paper to form a desired image or a desired three-dimensional geometry.
  • the term "printer” is meant to be understood broadly as any device capable of selectively placing a fluid onto a print medium.
  • the printer is an inkjet printer.
  • the printer is a three-dimensional printer.
  • the printer is a digital titration device.
  • a fluid is meant to be understood broadly as any substance that continually deforms under an applied shear stress.
  • a fluid may be a pharmaceutical.
  • the fluid may be an ink.
  • the fluid may be a liquid.
  • the term "print medium” is meant to be understood broadly as any surface onto which a fluid ejected from a nozzle of a printer cartridge may be deposited.
  • the print medium may be paper.
  • the print medium may be an edible substrate.
  • the print medium may be a medicinal pill.
  • the term “memristor” may refer to a passive two-terminal circuit element that maintains a functional relationship between the time integral of current, and the time integral of voltage. More specifically, a “vertical oxide memristor” is a memristor in which the top electrode and bottom electrode are aligned horizontally with a vertically-oriented switching oxide disposed between the bottom electrode and the top electrode.
  • a number of or similar language may include any positive number including 1 to infinity; zero not being a number, but the absence of a number
  • Fig. 1 is a diagram of a printing system (100) according to one example of the principles described herein.
  • the printing system (100) includes a printer (104).
  • the printer (104) includes an interface with a computing device (102).
  • the interface enables the printer (104) and specifically the processor (108) to interface with various hardware elements, such as the computing device (102), external and internal to the printer (104).
  • Other examples of external devices include external storage devices, network devices such as servers, switches, routers, and client devices among other types of external devices.
  • the computing device (102) may be any source from which the printer (104) may receive data describing a print job to be executed by the controller (106) of the printer (104) in order to print an image onto the print medium (126).
  • the controller (106) receives data from the computing device (102) and temporarily stores the data in the data storage device (110).
  • Data may be sent to the printer (104) along an electronic, infrared, optical, or other information transfer path.
  • the data may represent a document and/or file to be printed.
  • data forms a print job for the printer (104) and includes print job commands and/or command parameters.
  • a controller (106) of the printer (104) includes a processor (108), a data storage device (110), and other electronics for communicating with and controlling the printhead (1 16), mounting assembly (1 18), and media transport assembly (120).
  • the controller (106) receives data from the computing device (102) and temporarily stores data in the data storage device (1 10).
  • the controller (106) controls the printhead (1 16) in ejecting fluid from the nozzles (124). For example, the controller (106) defines a pattern of ejected fluid drops that form characters, symbols, and/or other graphics or images on the print medium (126). The pattern of ejected fluid drops is determined by the print job commands and/or command parameters received from the computing device (102).
  • the controller (106) may be an application specific integrated circuit (ASIC) stored on the printer (104) to determine the level of fluid in the printhead (116) based on resistance values of memristors integrated on the printhead (116).
  • the printer ASIC may include a current source and an analog to digital converter (ADC).
  • the ASIC converts a voltage present at the current source to determine a resistance of a memristor, and then determine a corresponding digital resistance value through the ADC.
  • Computer readable program code, executed through executable instructions enables the resistance determination and the subsequent digital conversion through the ADC.
  • the processor (108) may include the hardware architecture to retrieve executable code from the data storage device (110) and execute the executable code.
  • the executable code may, when executed by the processor (108), cause the processor (108) to implement at least the functionality of printing on the print medium (126), and actuating the mounting assembly (118) and the media transport assembly (120) according to the present specification.
  • the executable code may, when executed by the processor (108), cause the processor (108) to implement the functionality of providing instructions to the power supply (130) such that the power supply (130) provides power to the components of the printer (104).
  • the data storage device (110) may store data such as executable program code that is executed by the processor (108) or other processing device.
  • the data storage device (110) may specifically store computer code representing a number of applications that the processor (108) executes to implement at least the functionality described herein.
  • the data storage device (1 10) may include various types of memory modules, including volatile and nonvolatile memory.
  • the data storage device (1 10) of the present example includes Random Access Memory (RAM), Read Only Memory (ROM), and Hard Disk Drive (HDD) memory.
  • RAM Random Access Memory
  • ROM Read Only Memory
  • HDD Hard Disk Drive
  • Many other types of memory may also be utilized, and the present specification contemplates the use of many varying type(s) of memory in the data storage device (1 10) as may suit a particular application of the principles described herein.
  • different types of memory in the data storage device (1 10) may be used for different data storage needs.
  • the processor (108) may boot from Read Only Memory (ROM), maintain nonvolatile storage in the Hard Disk Drive (HDD) memory, and execute program code stored in Random Access Memory (RAM).
  • the data storage device (110) may include a computer readable medium, a computer readable storage medium, or a non- transitory computer readable medium, among others.
  • the data storage device (1 10) may be, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing.
  • a computer readable storage medium may include, for example, the following: an electrical connection having a number of wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
  • a computer readable storage medium may be any tangible medium that can contain, or store computer usable program code for use by or in connection with an instruction execution system, apparatus, or device.
  • a computer readable storage medium may be any non-transitory medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
  • the printing system (100) includes a printer cartridge (114) that includes a printhead (116), a reservoir (112), and a conditioning assembly (132).
  • the printer cartridge (1 14) may be removable from the printer (104) for example, as a replaceable printer cartridge (114).
  • the printer cartridge (114) includes a printhead (116) that ejects drops of fluid through a plurality of nozzles (124) towards a print medium (126).
  • the print medium (126) may be any type of suitable sheet or roll material, such as paper, card stock, transparencies, polyester, plywood, foam board, fabric, canvas, and the like.
  • the print medium (126) may be an edible substrate.
  • the print medium (126) may be a medicinal pill.
  • Nozzles (124) may be arranged in columns or arrays such that properly sequenced ejection of fluid from the nozzles (124) causes characters, symbols, and/or other graphics or images to be printed on the print medium (126) as the printhead (116) and print medium (126) are moved relative to each other.
  • the number of nozzles (124) fired may be a number less than the total number of nozzles (124) available and defined on the printhead (1 16).
  • the printer cartridge (114) also includes a fluid reservoir (112) to supply an amount of fluid to the printhead (116).
  • fluid flows from the reservoir (112) to the printhead (116), and the reservoir (112) and the printhead (116) form a one-way fluid delivery system or a recirculating fluid delivery system.
  • a one-way fluid delivery system fluid supplied to the printhead (116) is consumed during printing.
  • a recirculating fluid delivery system however, a portion of the fluid supplied to printhead (116) is consumed during printing. Fluid not consumed during printing is returned to the reservoir (112).
  • the reservoir (112) may supply fluid under positive pressure through a conditioning assembly (132) to the printhead (116) via an interface connection, such as a supply tube.
  • the reservoir (112) may include pumps and pressure regulators.
  • Conditioning in the conditioning assembly (132) may include filtering, pre-heating, pressure surge absorption, and degassing. Fluid is drawn under negative pressure from the printhead (116) to the reservoir (1 12). The pressure difference between the inlet and outlet to the printhead (1 16) is selected to achieve the correct backpressure at the nozzles (124).
  • a mounting assembly (118) positions the printhead (1 16) relative to media transport assembly (120), and media transport assembly (120) positioning the print medium (126) relative to printhead (116).
  • a print zone (128) is defined adjacent to the nozzles (124) in an area between the printhead (1 16) and the print medium (126).
  • the printhead (116) is a scanning type printhead (1 16).
  • the mounting assembly (118) includes a carriage for moving the printhead (116) relative to the media transport assembly (120) to scan the print medium (126).
  • the printhead (116) is a non-scanning type printhead (116).
  • the mounting assembly (1 18) fixes the printhead (116) at a prescribed position relative to the media transport assembly (120).
  • the media transport assembly (120) positions the print medium (126) relative to the printhead (116).
  • Fig. 2A is a diagram of a printer cartridge (114) and printhead (1 16) with a number of vertical oxide memristors having a sacrificial dielectric layer according to one example of the principles described herein.
  • the printhead (116) may comprise a number of nozzles (124).
  • the printhead (116) may be broken up into a number of print dies with each die having a number of nozzles (124).
  • the printhead (116) may be any type of printhead (116) including, for example, a printhead (116) as described in Figs. 2A and 2B.
  • the examples shown in Figs. 2A and 2B are not meant to limit the present description. Instead, various types of printheads (116) may be used in conjunction with the principles described herein.
  • the printer cartridge (114) also includes a fluid reservoir (112), a flexible cable (236), conductive pads (238), and a memristor array (240).
  • the flexible cable (236) is adhered to two sides of the printer cartridge (114) and contains traces that electrically connect the memristor array (240) and printhead (1 16) with the conductive pads (238).
  • the printer cartridge (114) may be installed into a cradle that is integral to the carriage of a printer (Fig. 1 , 104).
  • the conductive pads (238) are pressed against corresponding electrical contacts in the cradle, allowing the printer (Fig. 1 , 104) to communicate with, and control the electrical functions of, the printer cartridge (114).
  • the conductive pads (238) allow the printer (Fig. 1 , 104) to access and write to the memristor array (240).
  • the memristor array (240) may contain a variety of information including the type of printer cartridge (114), the kind of fluid contained in the printer cartridge (114), an estimate of the amount of fluid remaining in the fluid reservoir (1 12), calibration data, error information, and other data.
  • the memristor array (240) may include information regarding when the printer cartridge (114) should be maintained.
  • the memristor array (240) may include other information as described below in connection with Fig. 3.
  • the printer (Fig. 1 , 104) moves the carriage containing the printer cartridge (114) over a print medium (Fig. 1 , 126). At appropriate times, the printer (Fig. 1 , 104) sends electrical signals to the printer cartridge (114) via the electrical contacts in the cradle. The electrical signals pass through the conductive pads (238) and are routed through the flexible cable (236) to the printhead (116). The printhead (1 16) then ejects a small droplet of fluid from the reservoir (112) onto the surface of the print medium (Fig. 1 , 126). These droplets combine to form an image on the surface of the print medium (Fig. 1 , 126).
  • the printhead (116) may include any number of nozzles (124).
  • a first subset of nozzles (124) may eject a first color of ink while a second subset of nozzles (124) may eject a second color of ink.
  • Additional groups of nozzles (124) may be reserved for additional colors of ink.
  • Fig. 2B is a cross sectional diagram of a printer cartridge (114) and printhead (116) with a number of vertical oxide memristors having a sacrificial dielectric layer according to one example of the principles described herein.
  • the printer cartridge (114) may include a fluid supply (112) that supplies the fluid to the printhead (116) for deposition onto a print medium
  • the fluid may be ink.
  • the printer cartridge (114) may be an inkjet printer cartridge
  • the printhead (1 16) may be an inkjet printhead
  • the ink may be inkjet ink.
  • the printer cartridge (114) may include a printhead (116) to carry out at least a part of the functionality of depositing fluid onto a print medium.
  • the printhead (116) may include a number of components for depositing a fluid onto a surface.
  • the printhead (116) may include a number of nozzles (124).
  • Fig. 2B indicates a single nozzle (124), however a number of nozzles (124) are present on the printhead (116).
  • a nozzle (124) may include an ejector (242), a firing chamber (244), and an opening (246).
  • the opening (246) may allow fluid, such as ink, to be deposited onto a surface, such as a print medium (Fig. 1 , 126).
  • the firing chamber (244) may include a small amount of fluid.
  • the ejector (242) may be a mechanism for ejecting fluid through the opening (246) from a firing chamber (244), where the ejector (242) may include a firing resistor or other thermal device, a
  • the ejector (242) may be a firing resistor.
  • the firing resistor heats up in response to an applied voltage.
  • a portion of the fluid in the firing chamber (244) vaporizes to form a bubble.
  • This bubble pushes liquid fluid out the opening (246) and onto the print medium (Fig. 1 , 126).
  • a vacuum pressure within the firing chamber (244) draws fluid into the firing chamber (244) from the fluid supply (112), and the process repeats.
  • the printhead (116) may be a thermal inkjet printhead.
  • the ejector (242) may be a piezoelectric device. As a voltage is applied, the piezoelectric device changes shape which generates a pressure pulse in the firing chamber (244) that pushes a fluid out the opening (246) and onto the print medium (Fig. 1, 126).
  • the printhead (116) may be a piezoelectric inkjet printhead.
  • the printhead (116) and printer cartridge (114) may also include other components to carry out various functions related to printing. For simplicity, in Figs. 2A and 2B, a number of these components and circuitry included in the printhead (116) and printer cartridge (114) are not indicated; however such components may be present in the printhead (1 16) and printer cartridge (1 14). In some examples, the printer cartridge (114) is removable from a printing system for example, as a disposable printer cartridge.
  • Fig. 3 is a block diagram of a printer cartridge (114) that uses a printhead (116) with a number of vertical oxide memristors having a sacrificial dielectric layer according to one example of the principles described herein.
  • the printer cartridge (114) includes a printhead (116) that carries out at least a part of the functionality of the printer cartridge (114).
  • the printhead (116) may include a number of nozzles (Fig. 1, 124).
  • the printhead (116) ejects drops of fluid from the nozzles (Fig. 1 , 124) onto a print medium (Fig. 1 , 126) in accordance with a received print job.
  • the printhead (116) may also include other circuitry to carry out various functions related to printing.
  • the printhead (116) is part of a larger system such as an integrated printhead (IPH).
  • the printhead (116) may be of varying types.
  • the printhead (116) may be a thermal inkjet (TIJ) printhead or a piezoelectric inkjet (PIJ) printhead, among other types of printhead (116).
  • the printhead (116) includes a memristor array (240) to store information relating to at least one of the printer cartridge (114) and the printhead (116).
  • the memristor array (240) includes a number of memristor cells (348) formed in the printhead (116).
  • a memristor within each memristor cell (348) may be set to a particular resistance state. As memristors are non-volatile, this resistance state is retained even when power is removed from the printhead (116).
  • a memristor has a metal-insulator-metal layered structure. More specifically, the memristor may include a bottom electrode (metal), a switching oxide (insulator), and a top electrode (metal).
  • a memristor may be classified as an anion device which includes an oxide insulator. Examples of such oxide insulators include transition metal oxides, complex oxides, and large band gap dielectrics in addition to other non-oxide materials.
  • an aluminum-copper-silicon alloy oxide or tantalum oxide may be an example of a switching oxide in an anion device. In an anionic device, the switching mechanism is the oxygen vacancies in the oxide that are positively charged.
  • the electrodes i.e., the bottom electrode, the top electrode, or combinations thereof
  • the electrodes are formed from an electrochemically active metal such as copper or silver.
  • the number of memristor cells (348) are grouped together into a memristor array (240).
  • the memristor array (240) may be a cross bar array.
  • each memristor may be formed at an intersection of a first set of elements and a second number of elements, the elements forming a grid of intersecting nodes, each node defining a memristor.
  • the memristor array (240) may include a number of memristor cells (348) that form a one-to-one structure with a number of transistors.
  • an integrated circuit may include a number of addressing units. Each addressing unit may include a number of components that allow for multiplexing and logic operations.
  • the memristor cell (348) may be designed to be individually addressed by a distinct addressing unit.
  • the addressing units may be transistors.
  • the memristor cell (348) may share a one transistor-one memristor (1T1 M) addressing structure with the addressing units of the integrated circuit.
  • the memristor array (240) may be used to store any type of data. Examples of data that may be stored in the memristor array (240) include fluid supply specific data and/or fluid identification data, fluid characterization data, fluid usage data, printhead (116) specific data, printhead (116)
  • the memristor array (240) is written at the time of manufacturing and/or during the operation of the printer cartridge (114).
  • the printer cartridge (114) may be coupled to a controller (106) that is disposed within the printer (Fig. 1, 104).
  • the controller (106) receives a control signal from an external computing device (Fig. 1 , 102).
  • the controller (106) may be an Application-Specific Integrated Circuit (ASIC) found on the printer (Fig. 1 , 104).
  • a computing device (Fig. 1 , 102) may send a print job to the printer cartridge (114), the print job being made up of text, images, or combinations thereof to be printed.
  • the controller (106) may facilitate storing information to the memristor array (240). Specifically, the controller (106) may pass at least one control signal to the number of memristor cells (348).
  • the controller (106) may be coupled to the printhead (1 16), via a control line such as an identification line. Via the identification line, the controller (106) may change the resistance state of a number of memristors in the memristor array (240) to effectively store information to a memristor array (240). For example, the controller (106) may send data such as authentication data, security data, and print job data, in addition to other types of data to the printhead (116) to be stored on the memristor array (240).
  • data such as authentication data, security data, and print job data
  • the controller (106) may share a number of lines of communication with the printhead (116), such as data lines, clock lines, and fire lines.
  • lines of communication such as data lines, clock lines, and fire lines.
  • the different communication lines are indicated by a single arrow.
  • Figs. 4A and 4B are views of a vertical oxide memristor (348) having a sacrificial dielectric layer (450) according to one example of the principles described herein. Specifically, Fig. 4A is a cross-sectional view of the vertical oxide memristor (348) and Fig. 4B is a top view of the vertical oxide memristor (348).
  • the memristor (348), indicated in Fig. 4A by the dashed box, may have a metal-insulator-metal layered structure. More specifically, the memristor (348) may include a bottom electrode (452), a vertical switching oxide (454), and a top electrode (456).
  • the bottom electrode (452) may be an electrical connection between the memristor (348) and other components.
  • the top electrode (456) may also be an electrical connection between the memristor (348) and other components.
  • a surface of the bottom electrode (452) may be coupled to a first routing element (458-1).
  • the routing element (458-1 ) may be an electrical communication component that passes a control signal to the memristor (348).
  • the controller (Fig. 1 , 106) may pass a control signal through the routing element (458-1) to change the state of the memristor (348) such that the memristor (348) may store
  • components that may attach to the bottom electrode (452) include a ground connection, a number of connection pads, a current regulator, a capacitor, a resistor, and metal traces, among other memristor array (Fig. 2, 240) components.
  • the bottom electrode (452) may be formed of a number of metallic materials, or any other material that conducts electricity. Examples of such mechanical materials include titanium nitride, tantalum, tantalum nitride, platinum, aluminum, copper, an aluminum-copper alloy, and an aluminum- copper-silicon alloy among other metallic materials. In some examples, the bottom electrode (452) may be of varying thicknesses such as between 4,000 and 8,000 angstroms (A) thick. The bottom electrode (452) may be disposed on a substrate (460). The substrate (460) may be any material that provides mechanical rigidity to the memristor (348).
  • the substrate (460) may be formed of a dielectric material, such as silicon oxide, that may be formed on top of a silicon wafer.
  • dielectric materials such as silicon oxide
  • Other examples of dielectric materials that may form a portion of the substrate (460) include un-doped silicon glass (USG), borophosphosilicate glass (BPSG), tetraethyl orthosilicate (TEOS), and combinations thereof, among other dielectric materials.
  • the memristor (348) also includes a vertical switching oxide (454) that abuts the bottom electrode (452) and is also disposed on top of the substrate (460).
  • the vertical switching oxide (454) may abut a side surface of the bottom electrode (452) and may be disposed on a top surface of the substrate (460).
  • the vertical switching oxide (454) may be an insulator between the bottom electrode (452) and the top electrode (456).
  • the vertical switching oxide (454) in a first state, the vertical switching oxide (454) may be insulating such that current does not readily pass from the bottom electrode (452) to the top electrode (456).
  • the vertical switching oxide (454) may switch to a second state, becoming conductive.
  • the vertical switching oxide (454) allows a memristor (348) to store information by changing the memristor state.
  • the vertical switching oxide (454) may be less than 1.2 micrometers thick.
  • the vertical switching oxide (454) may be formed using a sacrificial dielectric layer (450).
  • a sacrificial dielectric layer (450) in this fashion may be advantageous in that size-limiting processes such as lithography and etching may not have a restricting impact on the size of the vertical switching oxide (454).
  • the vertical switching oxide (454) may be made of a metal oxide or nitride-based dielectric material.
  • specific examples of vertical switching oxide (454) materials include magnesium oxide, titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, iron oxide, cobalt oxide, copper oxide, zinc oxide, aluminum oxide, gallium oxide, silicon oxide, germanium oxide, tin dioxide, bismuth oxide, nickel oxide, yttrium oxide, gadolinium oxide, and rhenium oxide, among other oxides.
  • the vertical switching oxide (454) may be ternary and complex oxides such as silicon oxynitride.
  • the oxides presented may be formed using a number of different processes such as sputtering from an oxide target or oxidizing a deposited metal or alloy layer.
  • the memristor (348) also includes a sacrificial dielectric layer (450) that abuts the vertical switching oxide (454) and is disposed on top of the substrate (460).
  • the sacrificial dielectric layer (450) may abut a side surface of the vertical switching oxide (454) and may be disposed on a top surface of the substrate (460).
  • a portion of the sacrificial dielectric layer (450) that is beneath the top electrode (456) remains after an etching process.
  • the sacrificial dielectric layer (450) may be oriented planar relative to the bottom electrode (452) and the top electrode (456).
  • the use of a sacrificial dielectric layer (450) is beneficial by offering a simplified
  • the memristor (348) also includes a top electrode (456) that abuts the vertical switching oxide (454) and is disposed on top of the sacrificial dielectric layer (450).
  • the top electrode (456) abuts a side surface of the vertical switching oxide (454) and is disposed on a top surface of the sacrificial dielectric layer (450).
  • the top electrode (456) may be vertically-positioned relative to the sacrificial dielectric layer (450) and may be horizontally-positioned relative to the vertical switching oxide (454) and the bottom electrode (452).
  • the top electrode (456) may be an electrical connection between the memristor (348) and other components. Via a top surface, the top electrode (456) may be coupled to a second routing element (458-2) such as a data line.
  • a second routing element (458-2) such as a data line.
  • Other examples of components that may attach to the top electrode (456) include a ground connection, a number of connection pads, a current regulator, a capacitor, a resistor, and metal traces, among other memristor array (Fig. 2, 240) components.
  • the top electrode (456) may be formed from a metallic material such as tantalum or a tantalum-aluminum alloy, or other conducting material such as titanium, titanium nitride, copper, aluminum, platinum, and gold among other metallic materials.
  • the top electrode (456) may be of varying thickness.
  • the top electrode (456) may be between 4,000 and 8.000 angstroms (A) thick.
  • the memristor (348) may also include a dielectric layer (462) to electrically isolate the memristor (348) from other memristors (348) in an array (Fig. 2, 240) as well as to electrically isolate the components within a memristor (348).
  • the memristor array (Fig. 2, 240) may be a cross bar array.
  • each memristor (348) may be formed at an intersection of a first set of elements and a second number of elements, the elements forming a grid of intersecting nodes, each node defining a memristor (348).
  • the memristor array (Fig. 2, 240) may include a number of memristors (348) that form a one-to-one structure with a number of transistors.
  • an integrated circuit may include a number of addressing units. Each addressing unit may include a number of components that allow for multiplexing and logic operations.
  • the memristor (348) may be designed to be individually addressed by a distinct addressing unit.
  • the addressing units may be transistors.
  • the memristor (348) may share a one transistor-one memristor (1T1 M) addressing structure with the addressing units of the integrated circuit.
  • Fig. 5 is a flowchart of a method (500) for forming a vertical oxide memristor (Fig. 3, 348) having a sacrificial dielectric layer (Fig. 4, 450) according to one example of the principles described herein.
  • the method (500) includes forming (block 501) a bottom electrode (Fig. 4, 452) on a top surface of the substrate (Fig. 4, 460).
  • the substrate (Fig. 4, 460) may be any material that provides mechanical rigidity to the memristor (Fig. 3, 348), such as silicon for example.
  • forming (block 501) the bottom electrode (Fig. 4, 452) may include deposition of a metallic substance on a top surface of the substrate (Fig. 4, 460) and etching the substance to generate a geometry defined as the bottom electrode (Fig. 4, 452).
  • the formation (block 501 ) of the bottom electrode (Fig. 4, 452) is depicted in Fig. 6A.
  • the method (500) also includes depositing (block 502) a sacrificial dielectric layer (Fig. 4, 450) on the substrate (Fig. 4, 460) and the bottom electrode (Fig. 4, 452).
  • the sacrificial dielectric layer (Fig. 4, 450) may be blanket deposited on the bottom electrode (Fig. 4, 452) and a top surface of the substrate (Fig. 4, 460).
  • the portion of the sacrificial dielectric (Fig. 4, 450) deposited on the side surface of the bottom electrode (Fig. 4, 452) may be adjacent to a portion of the sacrificial dielectric (Fig. 4, 450) that is deposited on a top surface of the substrate (Fig. 4, 460) as depicted in Fig. 6B.
  • the portion of the sacrificial dielectric layer (Fig. 4, 450) that is adjacent to the side surface of the bottom electrode (Fig. 4, 452) may be etched away such that a space is created between the bottom electrode (Fig. 4, 452) and the top electrode (Fig. 4, 456). This space is subsequently filled with an oxide material to form the vertical switching oxide (Fig. 4, 454).
  • a first portion of the sacrificial dielectric layer (Fig. 4, 450) that is disposed on a top surface of the substrate (Fig. 4, 460) will similarly be etched away, while a second portion of the sacrificial dielectric layer (Fig. 4, 450), specifically a portion underneath the top electrode (Fig. 4, 456) may remain.
  • the method (500) also includes forming (block 503) a top electrode (Fig. 4, 456) on the sacrificial dielectric layer (Fig. 4, 450). More specifically, the top electrode (Fig. 4, 456) may abut a portion of the sacrificial dielectric layer (Fig. 4, 450) that is disposed on the side surface of the bottom electrode (Fig. 4, 452) as depicted in Fig. 6C. In this example, the top electrode (Fig. 4, 456) is planarly-oriented relative to the bottom electrode (Fig. 4, 452).
  • the top electrode (Fig. 4, 456) may be formed (block 503) by a number of formation processes such as physical vapor deposition (PVD).
  • forming (block 503) the top electrode (Fig. 4, 456) may include deposition of a metallic substance and etching of the substance to generate a geometry defined as the top electrode (Fig. 4, 456).
  • the formation (block 503) of the top electrode (Fig. 4, 456) is depicted in Fig. 6C.
  • a portion of the sacrificial dielectric layer (Fig. 4, 450) may then be removed (block 504). Specifically, a portion of the sacrificial dielectric layer (Fig. 4, 450) may be removed such that a portion of the sacrificial dielectric layer (Fig. 4, 450) that is underneath the top electrode (Fig. 4, 456) may remain intact. As described above, a vertical switching oxide (Fig. 4, 454) may then be formed (block 505) between the bottom electrode (Fig. 4, 452) and the top electrode (Fig. 4, 456). More specifically, the vertical switching oxide (Fig. 4, 454) may be formed in a cavity that was previously occupied by a removed portion of the sacrificial dielectric layer (Fig.
  • Forming (block 505) the vertical switching oxide (Fig. 4, 454) may include depositing a switching oxide material and etching a portion of the switching oxide material away.
  • the switching oxide material may be deposited across an entire surface of the memristor (Fig. 3, 348) as indicated in Figs. 6E and 6F and then etching away a portion of the switching oxide to retain a vertical portion, which vertical portion is disposed between the bottom electrode (Fig. 4, 452) and the top electrode (Fig. 4, 456) as indicated in Figs. 6G and 6H.
  • the vertical switching oxide (Fig. 4, 454) may be formed (block 505) by a deposition process such as physical vapor deposition wherein atoms or molecules may be ejected from a target material onto the bottom electrode (Fig. 4, 452), the top electrode (Fig. 4, 456), the substrate (Fig. 4, 460) or combinations thereof.
  • a target material is bombarded with energetic particles.
  • atoms or molecules of the target material are dislodged and built up to form the vertical switching oxide (Fig. 4, 454).
  • a deposition process is illustrated in Figs. 6E and 6G.
  • the vertical switching oxide (Fig. 4, 454) may be formed by a metal oxidation process.
  • the vertical switching oxide (Fig. 4, 454) may be formed by thermal oxidation, a process which exposes the bottom electrode (Fig. 4, 452) and top electrode (Fig. 4, 456) to oxidizing agents at elevated temperatures.
  • thermal oxidation processes include a furnace oxidation process, a rapid thermal process, a rapid thermal oxidation, and a rapid thermal annealing, among other oxidation processes.
  • the vertical switching oxide (Fig. 4, 454) is formed by performing plasma oxidation, which exposes the bottom electrode (Fig. 4, 452) and top electrode (Fig. 4, 456) to oxygen plasma at controlled temperatures.
  • a bi-metal vertical switching oxide (Fig. 4, 454) may be formed.
  • a bi-metal vertical switching oxide (Fig. 4, 454) may indicate that a number of materials make up the switching oxide.
  • a bi-metal switching oxide may be formed by forming the bottom electrode (Fig. 4, 452) and the top electrode (Fig. 4, 456) out of different materials.
  • the bi-metal switching oxide may be formed at the surfaces of the bottom electrode (Fig. 4,452) and the top electrode (Fig. 4, 456). Then through an oxidation process distinct switching oxide materials may form on each electrode to form a bi-metal vertical switching oxide (Fig. 4, 454). While specific examples of vertical switching oxide (Fig. 4, 454) formation processes have been given, other oxide forming processes are also contemplated by the present
  • the method (500) may include other operations such as depositing at least one dielectric layer (Fig. 4, 462) and forming routing elements (Fig. 4, 458-1 , 458-2) within the dielectric layers (Fig. 4, 462).
  • the routing elements (Fig. 4, 458-1 , 458-2) being in electrical communication with the bottom electrode (Fig. 4, 452), the top electrode (Fig. 4, 456), or
  • Figs. 6A-6K are diagrams illustrating the formation of a vertical oxide memristor (Fig. 3, 348) having a sacrificial dielectric layer (Fig. 4, 450) according to one example of the principles described herein.
  • Fig. 6A depicts a bottom electrode (452) being formed on a substrate (460).
  • the bottom electrode (452) may be a metallic substance made of titanium, tantalum, copper, aluminum, platinum, and alloys thereof, among other metallic substances.
  • the metallic substance may be deposited on the substrate (460) and etched to form a geometry referred to as the bottom electrode (452).
  • the substrate (460) may include a first dielectric layer that is deposited on a top surface of a silicon wafer.
  • the dielectric layer may be USG, BPSG, silicon nitride, tetraethyl orthosilicate, and combinations thereof, among other dielectrics.
  • the first dielectric layer may electrically isolate the memristor (Fig. 3, 348) from other memristors (Fig. 3, 348) and may electrically isolate the individual components of the memristor (Fig. 3, 348).
  • the sacrificial dielectric (Fig. 4, 450) is deposited on top of the bottom electrode (452) and the substrate (460). More specifically, a sacrificial dielectric material (450-1) is deposited such that it abuts a side surface of the bottom electrode (452) and is disposed on a top surface of the substrate (460).
  • the top electrode (456) is formed on top of the sacrificial dielectric material (450-1 ). More specifically, the top electrode (456) is formed on a top surface of the sacrificial dielectric material (450-1) such that it is adjacent to a portion of the sacrificial dielectric material (450-1) that abuts the side surface of the bottom electrode (452). In other words, a portion of the sacrificial dielectric material (450-1) is positioned between the vertical walls of the bottom electrode (452) and the top electrode (456). As with the bottom electrode (452), formation of the top electrode (456) may include deposition of a metallic substance and the metallic substance may be etched to form a geometry referred to as the top electrode (456).
  • a portion of the sacrificial dielectric material (450-1) may then be etched away as depicted in Fig. 6D to form the sacrificial dielectric layer (450). Specifically, a portion of the sacrificial dielectric material (450-1) that is not underneath the top electrode (456) may be etched away. Doing so may leave a portion of the sacrificial dielectric material (450-1) underneath the top electrode (456) intact as the sacrificial dielectric layer (450). The etching away also removes a portion of the sacrificial dielectric material (450-1) that is disposed between the bottom electrode (452) and the top electrode (456) that will be filled by the vertical switching oxide (Fig. 4, 454).
  • the vertical switching oxide (Fig. 4, 454) may be formed in a number of ways.
  • a switching oxide material (454-1) may be deposited on top of the bottom electrode (452), the top electrode (456) and the substrate (460).
  • the switching oxide material (454-1) may then be etched away as indicated in Fig. 6G to form the vertical switching oxide (454) between the bottom electrode (452) and the top electrode (456).
  • each of the bottom electrode (452) and the top electrode (456) may be oxidized such that two separate switching oxide materials (454-1 , 454-2) are formed on the bottom electrode (452) and the top electrode (456) respectively.
  • the switching oxide materials (454-1 , 454-2) may then be etched away as indicated in Fig. 6H to form a bi-metal switching oxide (454) between the bottom electrode (452) and the top electrode (456).
  • the method may include deposition of another dielectric layer (462).
  • Fig. 6I depicts the deposition of a dielectric material (462-1) to electrically isolate the components within a memristor (Fig. 3, 348) as well as to electrically isolate the memristor (Fig. 3, 348) from other memristors (Fig. 3, 348).
  • Fig. 6J depicts a portion of the dielectric material (462-1) being etched to make the dielectric layer (462) which houses the routing elements (458) that electrically couple the bottom electrode (452) and the top electrode (456) to other components such as the controller (Fig. 1 , 106) and other control lines.
  • Fig. 6K depicts the deposition and etching of a metallic substance to form the routing elements (458-1 , 458-2) used to couple the memristor (Fig. 3, 348) to other components.
  • the method (500) and operations depicted in Figs.5 and 6A-6K may be beneficial in that a memristor (Fig. 3, 348) on a printhead (Fig. 1 , 116) may be reduced to a smaller size and may not be constrained to the lithography and etch process constraints. Moreover, the memristor (Fig. 3, 348) described herein may be robust in that it is positioned on a thick substrate (Fig. 4, 460) and is not as susceptible to breakdown.
  • a printer cartridge (Fig. 1 , 114) and printhead (Fig. 1 , 116) with a number of vertical oxide memristors (Fig. 3, 348) having a sacrificial dielectric layer (Fig. 4, 450) may have a number of advantages, including: (1) reducing the size of the memristor (Fig. 3, 348) smaller than allowed by lithographic techniques; (2) reducing a manufacturing cost of the memristor (Fig. 3, 348); (3) providing a simple, cost-effective bi-metal memristor (Fig. 3, 348); (4) improving printhead (Fig. 1 , 1 16) memory performance; and (5) reducing cost of effective memristor (Fig. 3, 348) fabrication.
  • the computer usable program code may be provided to a processor of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the computer usable program code, when executed via, for example, the processor (Fig. 1, 108) of the printer (Fig. 1 , 104) or other programmable data processing apparatus, implement the functions or acts specified in the flowchart and/or block diagram block or blocks.
  • the computer usable program code may be embodied within a computer readable storage medium; the computer readable storage medium being part of the computer program product.
  • the computer readable storage medium is a non-transitory computer readable medium.

Abstract

La présente invention concerne une tête d'impression avec un certain nombre de memristances à oxyde vertical comportant une couche diélectrique sacrificielle. La tête d'impression comprend un certain nombre de buses pour déposer une quantité de fluide sur un support d'impression. Chaque buse comprend une chambre déclenchement pour maintenir la quantité de fluide, une ouverture pour distribuer la quantité de fluide sur le support d'impression, et un éjecteur pour éjecter la quantité de fluide à travers l'ouverture. La tête d'impression comprend également un réseau de memristances comprenant un certain nombre de memristances. Chaque memristance comprend une électrode inférieure disposée sur un substrat, un oxyde de commutation vertical venant en butée contre l'électrode inférieure et disposé sur le substrat, une couche sacrificielle diélectrique venant en butée contre l'oxyde de commutation vertical et disposée sur le substrat, et une électrode supérieure venant en butée contre l'oxyde de commutation vertical et disposée sur la couche diélectrique sacrificielle.
PCT/US2014/048272 2014-07-25 2014-07-25 Tête d'impression pourvue d'un certain nombre de memristances à oxyde vertical comportant une couche diélectrique sacrificielle WO2016014083A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005020312A1 (fr) * 2003-07-28 2005-03-03 Intel Corporation Procede pour produire un dispositif a semi-conducteur a canal extremement etroit
US20090244132A1 (en) * 2008-04-01 2009-10-01 Kevin Bruce Fluid Ejection Device
US20110310181A1 (en) * 2009-03-31 2011-12-22 Hewlett-Packard Development Company, L.P. Inkjet pen/printhead with shipping fluid
US20120120728A1 (en) * 2010-11-16 2012-05-17 Samsung Electronics Co., Ltd Non-volatile memory device
US20130106930A1 (en) * 2011-10-27 2013-05-02 Perry V. Lea Printhead assembly including memory elements

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005020312A1 (fr) * 2003-07-28 2005-03-03 Intel Corporation Procede pour produire un dispositif a semi-conducteur a canal extremement etroit
US20090244132A1 (en) * 2008-04-01 2009-10-01 Kevin Bruce Fluid Ejection Device
US20110310181A1 (en) * 2009-03-31 2011-12-22 Hewlett-Packard Development Company, L.P. Inkjet pen/printhead with shipping fluid
US20120120728A1 (en) * 2010-11-16 2012-05-17 Samsung Electronics Co., Ltd Non-volatile memory device
US20130106930A1 (en) * 2011-10-27 2013-05-02 Perry V. Lea Printhead assembly including memory elements

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