WO2016175365A1

WO2016175365A1 - Method for forming electromagnetic wave shielding film of semiconductor package by using pocket

Info

Publication number: WO2016175365A1
Application number: PCT/KR2015/004829
Authority: WO
Inventors: 김창수; 이민진; 김종운; 김봉석; 양원석
Original assignee: (주)씨앤아이테크놀로지
Priority date: 2015-04-28
Filing date: 2015-05-14
Publication date: 2016-11-03
Also published as: TWI552276B; KR20160128106A; TW201639086A; KR101689018B1

Abstract

The present invention relates to a method for forming an electromagnetic wave shielding film of a semiconductor package by using a pocket, and according to the present invention, the method for forming an electromagnetic wave shielding film of a semiconductor package comprises: a step A of checking an exterior structure of the semiconductor package; a step B of preparing a tray for loading, attaching, and conveying the semiconductor package confirmed in step A; a step C of preparing a pressure sensitive adhesive on the top side of the tray prepared in step B; a step D of preparing a stamp for forming a pocket on the top side of the pressure sensitive adhesive prepared in step C; a step E of forming the pocket on the top side of the pressure sensitive adhesive by using the stamp prepared in step D; and a step F of loading the semiconductor package of which the exterior structure has been confirmed in step A on the pocket through a loading means.

Description

Electromagnetic shielding film formation method of semiconductor package using pocket

The present invention relates to a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket, and more particularly, to an electromagnetic wave shielding film (BGA) type solder package having solder balls or a land grid array (LGA) type semiconductor package having irregularities on land. Attaching the solder ball or unevenness on the bottom of the semiconductor package on the tray prior to the sputter deposition process to form EMI shielding, so that the sputtered particles do not penetrate during the deposition process. It is possible to reduce the damage of the semiconductor package due to excessive force at the time of separation by easily removing the adhesive pad and the semiconductor package on the tray after the deposition process is completed. To reduce product defects and improve product quality, and to automate these processes. In other words, it improves the production yield and evenly and closely deposits the electromagnetic shielding film on the top side and the four side (Sidewall) five sides except for the bottom side of the semiconductor package. The present invention relates to a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket that can shield or prevent malfunction of the device by external electromagnetic waves.

Recently, semiconductor manufacturing technology continues to develop with high integration, thinness, and miniaturization, and there are various types of highly integrated semiconductor devices, of which semiconductor packages are representative.

Semiconductor packages are widely used in various fields such as smartphones, displays, home appliances, automobiles, industrial devices, and medical devices. Recently, miniaturization, light weight, and thinness are increasing. The importance of electromagnetic shielding of semiconductor packages is increasing. Therefore, various countermeasures for electromagnetic shielding have been proposed, and they were initially manufactured as a metal shield (Shield Iid) and mounted on a semiconductor package. However, the problem of product cost increase, thinning and miniaturization due to the increase in the number of parts and processes raises the problem. Although a method of forming a shielding film using a plating or spray method has been proposed, the film quality has recently been excellent due to a problem in which it is impossible to apply to a package having problems with etching solution or chemical treatment, or due to a problem of poor coating efficiency and a thick and uneven film quality. The sputtering electromagnetic shielding film is formed to form a uniform film with the same or better electromagnetic shielding function, excellent adhesion to package mold, and excellent environmental problems, even with a thickness of 1/5 ~ 1/10 or less than the conventional proposed method. have.

In the semiconductor package, a LGA (Land Grid Array) package composed of land-type metal electrodes on a lower surface which can contact the main electrode of the main board instead of a pin, and packages the semiconductor by directly mounting the chip on a silicon wafer. WLP (Wafer Level Package), and BGA (Ball Grid Array) with solder balls on the bottom of the package that maximizes the number of input and output terminals by placing external terminals on the bottom of the package to facilitate fine pitch and multipinning. There are two types of packages, such as LGA (Land Grid Array) semiconductor package composed of lands or BGA (Ball Grid Array) semiconductor package composed of solder balls on the lower surface. In the production of such a semiconductor package, a number of technologies have been constantly researched and developed for increasing the production yield and efficiency, including the product quality.

Sputtering is one of the essential processes in the electromagnetic wave shielding film formation in recent years. In order to manufacture a semiconductor package, conventionally, an adhesive shield is attached to the upper surface of a tray, a semiconductor package is loaded thereon, and then pushed with a roller to sputter the electromagnetic wave shielding film. The process went on.

Due to the characteristic of the thickly formed shielding film for electromagnetic shielding, it is made in a high temperature state for a long time, and thus the adhesive tape is pressed or combusted on the side and bottom surfaces of the semiconductor package due to the adhesive component of the adhesive tape during the sputtering deposition process. Another problem is that the semiconductor package may be contaminated.

In addition, after the sputter deposition process, the manual package had to be removed manually from the adhesive tape to reduce the efficiency and productivity of the work, and the semiconductor package was removed due to the strong adhesive force when the semiconductor package was separated from the adhesive tape on the upper surface of the tray. There was also a problem of increasing the defect rate of the semiconductor package is damaged or the adhesive remains in the package.

In order to solve this problem, the present applicant has received a patent application for a method and apparatus for sputtering a semiconductor package using a liquid adhesive, and in the above-mentioned patent (No. 10-1479248), the adhesion of the semiconductor package is By forming an easy adhesive pad using a liquid adhesive, it is possible to prevent the semiconductor package from being damaged when the semiconductor package is separated from the tray, to solve the problem of contamination during the manufacturing process, and to improve productivity by automation.

However, the pressure-sensitive adhesive pad formed of the liquid adhesive in the above-described patent has less irregularities in the semiconductor package, that is, in the case of the LGA having no electrode step or a small land-type package, the above problems are overcome, but the irregularities in the lower surface of the package are large. Alternatively, in the case of the BGA package having solder balls on the bottom surface of the package, there is a problem that it is too difficult to be applied to the electromagnetic shielding film sputtering deposition process. That is, when the adhesive pad formed of the conventional liquid adhesive is used, if the unevenness of the bottom surface of the package is large, or in the case of the BGA package having solder balls on the bottom surface of the package, a gap occurs between the adhesive pad and the package or the bottom surface of the package. The warpage or the warpage of a large warpage package that bends or bends above or below the gap or warpage between the adhesive pad and the lower surface of the semiconductor package of the above-mentioned electrode structure during the sputter deposition process. Deposition contamination is generated on the lower surface of the semiconductor package through the gap, resulting in a problem that the defect of the semiconductor package occurs.

In addition, in the past, even if the sputtering contamination caused by a slight lift, but allowed a range that does not significantly affect the performance of the product, in recent years, the quality standards are strict and difficult to solve the conventional problem.

Therefore, regardless of the uneven size of the bottom surface of the semiconductor package and the solder ball size of the bottom surface of the BGA semiconductor package, it was required to be able to sputter evenly and precisely only on the top and four sides of the semiconductor package while suppressing contamination of the bottom surface in various types of semiconductor packages.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems. The semiconductor package may be formed by depositing the upper and fourth sides of various types of semiconductor packages regardless of the uneven surface size of the semiconductor package or the solder ball size of the lower surface of the BGA semiconductor package. The present invention provides a method for forming an electromagnetic wave shielding film for a semiconductor package using pockets that follow recesses and depressions on a lower surface of the adhesive pad to prevent or prevent deposition contamination and to easily separate the semiconductor package after deposition.

Method for forming an electromagnetic shielding film of a semiconductor package using a pocket according to an embodiment of the present invention for achieving the above object, A method for forming an electromagnetic shielding film of a semiconductor package, A step of confirming the external structure of the semiconductor package; Preparing a tray for loading, attaching, and transferring the semiconductor package identified in step A; C step of providing a pressure-sensitive adhesive (粘着材) on the top side (Top Side) of the tray prepared in step B; Step D for preparing a stamp (Stamp) for forming a pocket (pocket) on the upper surface of the pressure-sensitive adhesive provided in step C; E step of forming a pocket on the upper surface of the pressure-sensitive adhesive material using the stamp prepared in step D; And a step F of loading the semiconductor package having the appearance structure confirmed in the step A into the pocket through a loading means; It may be characterized by including a.

Here, in the step A, the semiconductor package is a LGA (Land Grid Array) semiconductor package consisting of a land-shaped metal electrode on the lower surface or a BGA (Ball Grid Array Array) semiconductor package composed of a metal electrode of the solder ball shape on the lower surface It may also be a feature.

Here, in step A, the structure of the tray may be determined by determining the unevenness or solder ball size of the bottom side of the semiconductor package.

Here, in the step B, the tray for loading, attaching and transporting the semiconductor package may be another feature that is formed in a plane and is heat resistant.

Here, of the semiconductor package in the step A,

In the case of a semiconductor package having a large solder ball on a lower surface or a semiconductor package having a large unevenness on a lower surface, an ejector hole through which an ejector pin may pass through the tray for loading, attaching, and transferring the semiconductor package in step B. It may also be another feature that the tray is provided with an eject hole.

Here, the tray for loading, attaching and transporting the semiconductor package in the step B, the discharge hole and the discharge hole opening and closing device for discharging the outgas that may be generated in the process of forming the pocket or the sputtering process Another feature may be that the tray is provided.

Here, in the step B, the eject hole and the eject pin may be characterized in that one or more are provided in correspondence to one of the semiconductor packages.

Further, in the step B, the discharge hole and the discharge hole opening and closing device, it may be characterized in that one or more are provided respectively corresponding to one of the semiconductor package.

Here, the pressure-sensitive adhesive is a liquid adhesive, and in step C, the liquid adhesive may be applied to the entire top surface of the tray formed in a flat surface, and surface leveling may be another feature.

Here, the adhesive material is a liquid adhesive, the tray is provided with an ejector hole, in step C, the liquid adhesive is linearly applied to the upper surface of the tray provided with the ejector hole in a grid pattern and surface leveling (Surface leveling) processing may be another feature.

Here, the pressure-sensitive adhesive is a liquid adhesive, the tray is provided with an outgas discharge hole and the discharge hole opening and closing device, in the step C, the discharge hole by using the discharge hole opening and closing device to block the discharge hole, Another feature may be that the liquid adhesive is applied to the upper surface of the tray evenly and the surface leveling treatment is performed.

Here, the pressure-sensitive adhesive is a liquid adhesive, the step C, CA step of applying the liquid adhesive on the upper surface of the tray; And a CB step of semi-curing the liquid adhesive by first curing the liquid adhesive applied in the CA step. It may be another feature to include a.

Here, the pressure-sensitive adhesive is a silicon sheet, and in step C, a silicon sheet having a uniform thickness and adhesiveness on the upper surface and the lower surface is flat on the upper surface of the tray. It may be another feature to provide the adhesive by adhering.

Further, in the step C, the protective film is attached to the upper and lower surfaces of the silicon sheet (sheet), it may be another feature that the protective film is attached to the upper surface of the tray by removing.

Further, of the semiconductor package in the step A,

In the case of a semiconductor package having a large solder ball on the bottom surface or a semiconductor package having a large unevenness on the bottom surface of the package, an ejector hole through which an ejector pin may pass may pass through the tray for loading, attaching and transferring the semiconductor package in step B. It may also be another feature that the tray is provided with an eject hole.

Further, in the CA step, the liquid adhesive is applied and surface leveling (Surface leveling) so that the thickness of the liquid adhesive applied to the upper surface of the tray is formed thicker than the thickness of the unevenness of the semiconductor package or the solder ball of the semiconductor package. ) May be another feature.

Here, the pressure-sensitive adhesive is a silicon sheet, in the step C, it may be another feature that the thickness of the silicon sheet is formed to be thicker than the thickness of the unevenness of the semiconductor package or the solder ball of the semiconductor package.

Further, in the step D, it may be another feature to form a hole of the grid pattern in the silicon sheet.

Furthermore, the hole of the lattice pattern formed in the silicon sheet in step D may be formed to be smaller than the bottom surface of the semiconductor package to be loaded onto the tray in step F. .

Here, the adhesive material may be a liquid adhesive, and the stamp in step D may be another feature that the stamp has a structure corresponding to the area of the lower surface of the semiconductor package identified in step A.

Further, the stamp may be another feature that the protruding surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package is a flat surface.

Here, the protruding surface of the stamp having a structure corresponding to the area of the semiconductor package may further have a structure corresponding to the unevenness of the semiconductor package or the size of the solder balls of the semiconductor package.

In this case, a plurality of the stamps may be provided to form pockets corresponding to the plurality of semiconductor packages loaded on the tray.

The pressure-sensitive adhesive may be a silicon sheet, and the stamp in step D may be a stamp having a structure corresponding to the area of the lower surface of the semiconductor package found in step A.

Further, the protruding surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package may be another feature having a structure corresponding to the unevenness of the semiconductor package or the size of the solder ball of the semiconductor package.

In addition, a plurality of the stamps may be provided to form pockets corresponding to the plurality of semiconductor packages loaded on the tray.

Here, the pressure-sensitive adhesive is a liquid adhesive, in the step E, by pressing the adhesive provided on the upper surface of the tray with the stamp prepared in the step D to cure the secondary to form a pocket on which the semiconductor package can be loaded. It may also be another feature.

Here, the pressure-sensitive adhesive is a liquid adhesive, in step E, by pressing the adhesive material provided on the upper surface of the tray with the stamp prepared in step D completely cured to form a pocket on which the semiconductor package can be loaded. It may also be another feature.

Further, it may be another feature that the degassing treatment is performed while the pocket for loading the semiconductor package is formed while the liquid adhesive is completely cured.

Here, the adhesive material is a silicon sheet, and in step E, by pressing the adhesive material provided on the upper surface of the tray with the stamp prepared in step D, the first curing is performed to form a pocket in which a package can be loaded. It may also be a feature.

Here, the pressure-sensitive adhesive material is a silicon sheet, and in step E, by pressing the adhesive material provided on the upper surface of the tray with the stamp prepared in step D flatly completely cured to form a pocket in which a package can be loaded. It may also be characterized.

Furthermore, the silicon sheet may be completely cured while the pocket for loading the semiconductor package is formed, and degassing may be performed.

Furthermore, in the step F, the semiconductor package may be loaded so that the bottom surface of the semiconductor package coincides with the pocket formed by completely curing in the step E.

Further, in the step F, the step of loading the semiconductor package so that the bottom surface of the semiconductor package coincides with the pocket formed by curing in the step E, and completely curing while pressing the semiconductor package using a pressing device; It may also be another feature to include a further.

Furthermore, the pressing device used in the step G, the lower heater which is located under the tray, and heats the tray; A pressing plate for pressing the semiconductor package located on an upper surface of the pocket; And a pressing plate height adjusting device positioned at a side of the pressing plate and adjusting a height of the pressing plate of the semiconductor package. It may be another feature to include a.

Furthermore, a plurality of vacuum suction holes are provided in the lower heater of the pressing device used in the step G, and the pressing device may vacuum suction the tray to correct and flatten the warpage of the tray. It can also be another feature.

Further, in the step G, it may be another feature to discharge the outgas generated while heating the tray so that the pocket is completely cured by using the lower heater of the pressing device.

In addition, the pressing device used in the step G, may be located on top of the pressing plate, and further comprising an upper heater for heating the pressing plate.

Here, in the step G, the pressing plate is heated so that the pocket is completely cured by using the upper heater of the pressing device, and at the same time, the oil discharged from the adhesive material is suppressed from being attached to the pressing plate. You can also do

Here, in the step G, the side of the pressing plate of the pressing device is provided with a plurality of exhaust holes, it may be another feature that the outgas generated in the curing process is discharged to the exhaust hole.

Here, in step G, when pressing the semiconductor package by using the pressing plate may be another feature to adjust the degree of unevenness of the semiconductor package or the solder ball of the semiconductor package is inserted.

Here, in step G, the degassing apparatus may be further used so that outgassing is completely performed when the semiconductor package is pressed by using the pressing plate.

Here, in the step G, in the pressing plate of the pressing device, a spring capable of applying pressure to the semiconductor package to suppress the influence of planar accumulation tolerances of the tray, each semiconductor package, and the pressing plate is further added to the pressing plate. Installing may be another feature.

Here, in the step G, in the pressing plate of the pressing device, further installing a load cell and a pressure regulating device on the pressing plate in order to suppress the influence of the plane accumulation tolerance of the tray, each of the semiconductor package and the pressing plate. It may also be a feature.

The method may further include a step H of sputtering the semiconductor package loaded in the step F.

The electromagnetic wave shielding film forming method of the semiconductor package using the pocket according to the present invention is a semiconductor package when the deposition on the top and the four sides in various types of semiconductor package irrespective of the uneven size of the bottom surface of the semiconductor package or the solder ball size of the bottom surface of the BGA semiconductor package By forming a pocket on the adhesive pad following the uneven surface of the bottom surface of the uneven surface or the semiconductor package, deposition contamination can be suppressed or prevented, and short circuit between the solder balls or lands can be prevented, resulting in defects in the semiconductor package during the sputtering deposition process. It has the effect of suppressing.

In addition, the top and four sides of the semiconductor package can be evenly and precisely deposited to shield electromagnetic waves generated by the semiconductor package or to prevent malfunction of the device by external electromagnetic waves, thereby improving quality.

In addition, since the contact area between the adhesive and the lower surface of the semiconductor package can be minimized, it can be easily unloaded while preventing damage to the solder balls when separating or separating the semiconductor package, thereby preventing damage to the semiconductor package. In addition, it can be automated and has the effect of improving the production yield.

In addition, since a flat shape such as a stamp can be formed to a portion where the bottom protrusion of the semiconductor package, which may be generated by the conventional method, rises outward, the adhesive material due to the bottom protrusion of the semiconductor package is loaded when the semiconductor package is loaded. There is no external projection, and it also has the effect of enhancing the quality sputtering effect.

1 is a flowchart schematically illustrating a method of forming an electromagnetic shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view schematically illustrating a tray shape according to a semiconductor package exterior structure and an adhesive material provided on an upper surface of the tray in a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view schematically illustrating the formation of an adhesive pad by applying a liquid adhesive, which is an adhesive, on the upper surface of the tray of the present invention, and curing the first adhesive.

4 is a cross-sectional view schematically illustrating a stamp and a pocket in a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.

5 is a cross-sectional view schematically illustrating a semiconductor package loaded in a pocket formed on an upper surface of an adhesive in the method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.

6 to 9 are cross-sectional views schematically illustrating a pressing device pressing a semiconductor package on an upper side of the semiconductor package in the method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.

10 is a schematic cross-sectional view of a sputtered semiconductor package in a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention.

Hereinafter, a preferred embodiment with reference to the accompanying drawings to be described in more detail with respect to the present invention will be described.

1 is a flowchart schematically showing a method for forming an electromagnetic shielding film of a semiconductor package using a pocket according to an embodiment of the present invention, Figure 2 is a semiconductor package in a method for forming an electromagnetic shielding film of a semiconductor package using a pocket according to an embodiment of the present invention 3 is a cross-sectional view schematically illustrating a shape of a tray according to an external structure and a state in which an adhesive is provided on an upper surface of the tray, and FIG. 3 is a liquid adhesive applied to an upper surface of the tray of the present invention, and then hardened to form an adhesive pad. 4 is a cross-sectional view schematically showing the shape of the stamp and the pocket in the method for forming an electromagnetic shielding film of the semiconductor package using the pocket according to an embodiment of the present invention, Figure 5 is an embodiment of the present invention Electromagnetic shielding film forming method using semiconductor package pocket according to FIG. 6 is a cross-sectional view schematically illustrating a semiconductor package loaded in a pocket formed on an upper surface of an adhesive material, and FIGS. 6 to 9 are top views of a semiconductor package in a method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention. 10 is a cross-sectional view schematically illustrating a pressing device of a semiconductor package, and FIG. 10 is a cross-sectional view schematically illustrating a sputtered semiconductor package in a method for forming an electromagnetic shielding film of a semiconductor package using a pocket according to an exemplary embodiment of the present invention.

1 to 10, the method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket according to an embodiment of the present invention basically includes steps A to F.

If necessary, it may further include a G stage, and more preferably, may further include an H stage.

For reference, in describing the present invention, for convenience of description, the semiconductor package is briefly described as briefly described as a package.

And in the description of the embodiment of the present invention, a representative example that can be used as an adhesive (粘着材), there is a liquid adhesive and a silicone sheet, in the case of the case of a liquid adhesive and a silicone sheet as an example if necessary in each step Will be described separately.

<< S110 >>

First, step S110 is a step of checking the appearance structure of the semiconductor package.

For example, a semiconductor package in step A110, a LGA (Land Grid Array) semiconductor package having a land-shaped metal electrode on the bottom surface of the semiconductor package or a BGA (solder ball-shaped metal electrode formed on the bottom surface of the semiconductor package) Ball Grid Array) semiconductor package and the like.

Further, in step A110, the size of the bottom side of the semiconductor package, the height of the sidewalls, the presence or absence of metal lines formed on the side surfaces, the form of the side surfaces, and the land shape of the bottom surface Determine the formation height of the adhesive pad (thickness of thickness) and attachment conditions, and the shape and structure of the tray by grasping the land protrusion level of the lower surface, the unevenness of the lower surface, the size of the solder ball attached to the lower surface, the placement and density of the solder ball. It is desirable to.

In this way, the external structure of the semiconductor package is confirmed in step S110.

<< S120 >>

Step B120 is a step of preparing a tray for loading, attaching, transferring or supporting the semiconductor package identified in step A110.

In step S120, the tray for loading, attaching, and transporting the semiconductor package is preferably formed in a plane and has heat resistance.

For example, the tray for loading, attaching, and transferring the semiconductor package is formed in a flat shape and is not thermally deformed to 250, and preferably has a flatness within 50 μm.

Alternatively, the tray for loading, attaching, and transferring the semiconductor package may include a semiconductor package having a large solder ball size at the bottom of the semiconductor package (S110), a semiconductor package having a large land protrusion step at the bottom of the semiconductor package, or a semiconductor package. In the case of any one of a semiconductor package having a large unevenness of the lower surface or a semiconductor package having a large contact area with the adhesive pad, the tray for loading, attaching and transferring the semiconductor package in step B120 may be an ejector pin. It is preferable that the tray is provided with an ejector hole through which pins can pass.

For example, when the tray is used to check the appearance of the package, the ejector pin may pass through a package having an area of more than 0.3mm in the solder ball of the BGA package or 25mm25mm in the bottom of the semiconductor package. It is preferable that a hole is provided.

In more detail, the numerical values are examples, and the standards for providing the eject holes may vary according to various appearance structures of the semiconductor package or separation and separation methods of the packages.

Here, more preferably, the eject hole and the eject pin may be provided with one or a plurality of ejection pins based on one semiconductor package. In this case, the out gas, which may be generated in the pocket forming process or the sputtering process, may be discharged through the eject hole.

Thus, the tray provided with the ejector pin and the ejector hole is also preferable, and the following tray is also preferable. That is, the tray is provided with a discharge hole (not shown) and a discharge hole opening / closing device (not shown) for discharging out gas that may be generated during the pocket forming process or the sputtering process. It is desirable.

Using a tray provided with a discharge hole and a discharge hole opening and closing device, the outgas generated in the process of forming the pocket can be more effectively discharged. Here, the ejector hole and the ejector pin may be used as the discharge hole and the discharge hole opening and closing device or may be provided with the discharge hole and the discharge hole opening and closing device separately.

And when using a tray provided with a discharge hole and the discharge hole opening and closing device, the degassing exhaust device may be mounted on the tray. The degassing device is a device for discharging the outgas discharged through the discharge hole to the outside.

When the degassing device is installed in the tray provided with the discharge hole and the opening / closing device, the degassing device exhausts the outgas discharged through the discharge hole to the outside, thereby more effectively removing the outgas.

In addition, according to various external structures of the semiconductor package or a method of separating and separating the package, a standard for providing the discharge hole may vary. In addition, the discharge hole and the discharge hole opening and closing device may be in the form of one or a plurality of semiconductor package based.

In this manner, in step S120, the tray as described above is prepared.

<< S130 >>

Next, step C (S130) is a step of preparing an adhesive material (粘着材) on the upper surface of the tray prepared in step B (S120).

Here, when the pressure-sensitive adhesive is a liquid adhesive, in step S130, as in the example shown in Figure 2 (a), the liquid adhesive 120 is a pressure-sensitive adhesive on the top surface (Top Side) of the tray 110 formed in a plane It is preferable to apply the entire surface to the surface evenly and to perform a surface leveling treatment.

For example, the liquid adhesive 120 may be uniformly applied to the top surface of the tray 110 formed in a flat surface, and may be treated to have a flatness within 30 μm after surface leveling.

Here, squeegee (not shown) or flat bar (not shown) may be used to increase flatness.

Alternatively, as in the example shown in (b) of FIG. 2, when the tray 130 having the ejector hole 135 is used, the liquid adhesive 140 is lattice on the upper surface of the tray 130. It is preferable to apply the pattern linearly and to perform a surface leveling treatment.

In more detail, the method of applying the liquid adhesive may vary depending on the size of the solder ball attached to the BGA semiconductor package or the area of the bottom surface of the semiconductor package, the land protrusion level of the LGA semiconductor package, and the unevenness of the bottom surface of the semiconductor package.

For example, when the solder ball size of the BGA package is small, the area of the bottom surface of the package is small, or the LGA package land protrusion step is small, the tray in which the liquid adhesive 120 is formed in a flat plane as shown in FIG. It may also be applied to the entire surface of the 110.

Alternatively, when the solder ball size of the BGA semiconductor package is large, the area of the bottom surface of the semiconductor package is large, or the LGA semiconductor package land protrusion step is large, the eject hole 135 is formed in the tray 130 as shown in FIG. It may be provided with the liquid adhesive 140 may be applied to the tray 130 in a lattice.

Here, in order to reduce the contact area between the adhesive pad formed by curing the liquid adhesive 140 and the package so as to facilitate separation and separation of the semiconductor package after sputtering is completed, a dispenser may be used to linearly apply the liquid adhesive in a lattice pattern. (Not shown) may be used to linearly apply the liquid adhesive in a lattice pattern.

And, in case of using the tray provided with the discharge hole and the discharge hole opening and closing device, the discharge hole is closed with the opening and closing device (that is, closes the entrance and exit of the discharge hole), and the liquid adhesive is applied to the upper surface of the tray in a flat manner and the surface leveling is performed. You can also do it. For reference, the discharge hole is provided to discharge the outgas that may be generated in the process of forming a pocket or the sputtering to be described later.

On the other hand, in the case of using a liquid adhesive as an adhesive, it may be described that the C step (S130) is composed of a CA step and a CB step. Here, the CA step is a step of applying a liquid adhesive on the upper surface of the tray, the CB step may be referred to a step of semi-curing the liquid adhesive by primary curing the liquid adhesive applied in the CA step.

In this case, the CA step is applied to the liquid adhesive on the upper surface of the tray and surface leveling as described above. The first step is to harden in the CB stage. Here, 1st Curing is the first hardening, and it is not hardened to harden completely, but hardening to lower the viscosity and increase the hardness.

And the liquid adhesive that is the adhesive material may be referred to as a semi-cured adhesive pad for convenience of description for the first curing. That is, even after several curing processes, the adhesive material which has undergone at least one curing may be referred to as an adhesive pad.

Here, for example, to explain more, it is preferable that the primary curing temperature of the liquid adhesive is semi-cured with heat of 50 ℃ ~ 150 ℃. More preferably, the first curing time of the liquid adhesive forms a semi-cured adhesive pad under conditions of 10 minutes with heat of 50 ° C to 150 ° C.

In more detail, the numerical values are examples, and the primary curing temperature and time may vary according to various appearance structures of the package or separation and separation methods of the package.

In addition, primary hardening may be considered here as the order of hardening. Therefore, the primary curing of the silicone sheet to be described later and the primary curing of the liquid adhesive may be the same or different. This is because the silicone sheet is not in the liquid state, but the liquid adhesive is in the liquid state before the first curing.

Therefore, the conditions of primary curing when forming a pocket using a silicone sheet to be described later as an adhesive (curing temperature, curing time, etc.) are the conditions of primary curing when forming a pocket using a liquid adhesive as the adhesive. (Curing temperature, curing time, etc.) are the same, it is preferable to limit to limit and not to analyze. Understand the curing sequence occurring in the electromagnetic shielding film forming method using the semiconductor package pocket according to the present invention, the curing conditions (curing temperature, curing time, etc.) for each curing sequence can be set differently as needed, the same curing conditions ( Curing temperature, curing time, etc.) may be repeatedly performed once or more times.

Primary hardening makes the liquid adhesive in a semi-cured adhesive pad state, and it has an adhesive force and elasticity at the same time to facilitate insertion of solder balls or land protruding electrodes. In FIG. 3, the concept of the first curing of the adhesive is schematically illustrated in a cross-sectional view. In FIG. 3, reference numeral 210 denotes a tray formed in a plane, reference numeral 230 denotes a tray having an eject hole, reference numeral 220 denotes a liquid adhesive applied to the upper surface of the tray, and reference numeral 240 denotes a tray. The liquid adhesive is linearly coated in a lattice pattern on the upper surface of the tray provided with the eject hole.

Next, in the case where the adhesive material is a silicon sheet, in step C, an upper surface and a lower surface of the adhesive sheet are attached to the upper surface of the tray by attaching a sheet having a uniform thickness and adhesiveness to the upper surface of the tray. It is to provide an adhesive.

Here, if the protective film is attached to the upper and lower surfaces of the silicon sheet (sheet) is preferable because it can prevent the contamination of the silicon sheet by impurities as much as possible. When placing a silicon sheet with a protective film on the tray, it is preferable to remove the protective film and attach it to the upper surface of the tray.

Since the silicone sheet is excellent in formability and can be processed into a pad shape, there is no need for primary thermal curing. In addition, the use of silicon with low vapor pressure in the silicon sheet can suppress outgassing during the sputtering process.

Here, in the case of the semiconductor package in step A110, the semiconductor package having a large bottom solder ball or a semiconductor package having a large unevenness in the bottom surface, the tray for loading, attaching and transferring the semiconductor package in step B120 may be Preferably, the tray is provided with an ejector hole through which an ejector pin may pass.

For example, when checking the appearance of a package, a package having an ejector hole may be used for a package having an area in which the size of the solder ball of the BGA package exceeds 0.3 mm or the size of the bottom surface of the package exceeds 25 mm × 25 mm. It is preferable.

In more detail, the numerical values are examples, and the standards for providing the eject holes may vary according to the appearance structure of the various lower surfaces of the package or the separation and separation methods of the packages.

Here, referring to the thickness of the adhesive material provided on the upper surface of the tray, when the adhesive is a liquid adhesive, the thickness of the liquid adhesive applied to the upper surface of the tray is thicker than the thickness of the unevenness of the semiconductor package or the solder ball size of the semiconductor package. It is preferable to apply a liquid adhesive to form and to perform a surface leveling (Surface leveling) process. At this time, for example, the liquid adhesive thickness is preferably formed to be approximately 100 ~ 500um thicker than the thickness of the unevenness of the semiconductor package.

When the silicon sheet is used as the pressure-sensitive adhesive, the thickness of the silicon sheet is preferably about 100 to 500 um thicker than the thickness of the unevenness of the semiconductor package or the size of the solder balls of the semiconductor package.

Here, the numerical values are taken as an example and the thickness of the pressure-sensitive adhesive material may vary depending on the appearance structure and the shape of the various lower surfaces of the package.

As described above, in step C130, an adhesive material is provided on the top side of the tray.

<< S140 >>

Next, step D140 is a step of preparing a stamp for forming a pocket (pocket) on the upper surface of the pressure-sensitive adhesive provided in step C130 (S130).

When the liquid adhesive is used as the pressure-sensitive adhesive in step C (S130), the stamp in step D (S140) is preferably a stamp having a structure corresponding to the area of the lower surface of the semiconductor package identified in step A (S110).

The protrusion surface of the stamp having a structure corresponding to the area of the bottom surface of the semiconductor package is preferably a flat surface or a structure corresponding to the unevenness of the semiconductor package or the size of the solder ball of the semiconductor package.

It is also preferable that a plurality of stamps be provided to form pockets corresponding to the plurality of semiconductor packages to be loaded on the tray.

That is, since a plurality of pockets are formed by a plurality of stamps, and a plurality of semiconductor packages can be loaded in a plurality of pockets, the electromagnetic shielding film sputtering process can be performed on a plurality of semiconductor packages at once.

An example of such a stamp 350 (see FIG. 4A) is schematically illustrated in FIG. 4A. In this case, as shown in the stamp 350 shown in FIG. 4A so as to correspond to the side surface of the semiconductor package, the protrusion surface of the stamp 350 is formed to protrude vertically (FIG. 4B). The pocket 321 may be formed (see FIG. 4C) so that the side portion of the pocket is vertical.

Alternatively, the pocket 321 may be formed such that the side portion of the pocket is inclined as shown in FIG. The semiconductor package may be loaded onto an inclined surface (surface formed obliquely in the pocket, see FIG. 4D) of the pocket 321 formed using the stamp.

When the semiconductor package is loaded in a pocket having an inclined surface as shown in FIG. 4D, the semiconductor package 400 is loaded in the pocket as shown in FIG. 5C. When the semiconductor package is separated after sputtering with respect to the semiconductor package, the contact area between the semiconductor package 400 and the pocket 321 (see FIG. 4 (d)) is smaller as shown in FIG. It can be easily removed.

As such, FIG. 4 illustrates an example of a stamp, and in addition to the form illustrated in FIG. 4, various types of stamps may be used as needed.

Referring to the case of using the silicon sheet as the adhesive in step C (S130) as follows.

When the semiconductor package is a silicon package in step A (S110), a semiconductor package having a large solder ball size on the bottom surface of the package or a semiconductor package having a large unevenness on the bottom surface of the package, the tray for loading, attaching and transferring the semiconductor package in step B is A tray having an ejector hole through which the ejector pins can pass may be used.

The upper and lower surfaces are flat and have a uniform thickness and are adhered to the upper surface of the tray by using an adhesive silicone sheet having an adhesive. In operation D140, holes or pockets of a lattice pattern may be formed in the silicon sheet.

Here, the hole of the grid pattern to be formed in the silicon sheet is preferably formed to be smaller in size than the lower surface of the semiconductor package to be loaded to the upper side of the tray in step S160 to be described later.

The stamp for forming the pocket in the silicon sheet is preferably a stamp having a structure corresponding to the bottom surface area of the semiconductor package identified in step A110, and the protrusion having a structure corresponding to the bottom area of the semiconductor package. More preferably, the surface is flat or has a structure corresponding to the unevenness of the semiconductor package.

It is also preferable that a plurality of stamps are provided to form pockets corresponding to the plurality of semiconductor packages to be loaded onto the tray.

That is, since a plurality of pockets are formed by a plurality of stamps, and a plurality of semiconductor packages can be loaded in a plurality of pockets, it is preferable because an electromagnetic wave shielding film sputtering process can be performed on a plurality of semiconductor packages at one time.

An exemplary view of such a stamp 350 is schematically shown in FIG. Here, the stamp protruding surface corresponding to the side surface of the package, such as the stamp 350 as shown in (a) of FIG. 4, is formed vertically (see (c) of FIG. 4) or (d) of FIG. As shown, the package may be loaded (see (c) of FIG. 5) on the inclined surface of the pocket formed by inclining. Therefore, FIGS. 4 and 5 illustrate examples and may include various types of stamps.

As described above, a stamp 350 is prepared to form a pocket on the upper surface of the adhesive material 320 provided in the tray 310 in step S140.

<< S150 >>

In the step S150, the pocket is formed on the upper surface of the adhesive using the stamp prepared in the step S140.

When the adhesive material prepared in step C (S130) is a liquid adhesive, in step E (S150), the adhesive material 320 provided on the upper surface of the tray 310 with the stamp 350 prepared in step D (S140) (FIG. 4 ( Curing while pressing flat (as shown schematically in b) forms pockets into which the semiconductor package can be loaded. Particularly, in the case where the primary curing is performed in step S130, the curing in the present step D (S140) may be referred to as secondary curing.

Or (a) the pressure-sensitive adhesive 320 prepared on the upper surface of the tray 310 with the stamp 350 prepared in step S140 (as shown schematically in FIG. 4 (b)) while completely hardening ( Or curing performed last several times during curing, to form a pocket into which the semiconductor package can be loaded.

At this time, while the liquid adhesive as the adhesive 320 is completely cured, a pocket in which the semiconductor package can be loaded is formed, and degassing to remove the outgas discharged while curing is preferably performed.

On the other hand, in the case of using a silicone sheet other than the liquid adhesive as the adhesive material in this step E (S150), the adhesive material (that is, silicon sheet) provided on the upper surface of the tray 310 with the stamp 350 prepared in step D (S140) ( First pressing while flattening 320 forms a pocket 321 into which the package can be loaded.

Or complete curing (or several times of curing) while pressing the adhesive (i.e. silicon sheet) provided on the upper surface of the tray with the stamp prepared in step S140 (as schematically shown in FIG. 4 (b)). Curing sequentially) to form a pocket 321 into which the package can be loaded.

At this time, the silicon sheet as the adhesive material is completely cured to form a pocket 321 through which the semiconductor package can be loaded, and the degassing treatment to remove the outgas discharged while curing is also preferably performed.

For reference, the first or second curing may be regarded as the order of curing. Therefore, the primary curing of the silicone sheet and the primary curing of the liquid adhesive may be the same or different. This is because the silicone sheet is not in the liquid state, but the liquid adhesive is in the liquid state before the first curing.

Therefore, the conditions of primary curing (curing temperature, curing time, etc.) when forming a pocket using a silicone sheet as an adhesive material are the conditions of the primary curing when forming a pocket using a liquid adhesive as the adhesive (curing temperature). , Curing time, etc.) is preferably the same and not interpreted. Understand the curing sequence occurring in the electromagnetic shielding film forming method using the semiconductor package pocket according to the present invention, the curing conditions (curing temperature, curing time, etc.) for each curing sequence can be set differently as needed, the same curing conditions ( Curing temperature, curing time, etc.) may be implemented.

Briefly summarizing the E step (S150) described above, basically in step E (S150) to form a pocket using a stamp on the upper surface of the adhesive material provided on the tray. And in the pocket forming process, it is also possible to selectively perform a curing treatment for the adhesive material as needed.

<< S160 >>

In step S160, the semiconductor package whose exterior structure is confirmed in step S110 is loaded into a pocket through loading means.

When the liquid adhesive is used as the adhesive in step C130 (S130), in step F160, the semiconductor package is loaded to match the bottom surface of the semiconductor package in a pocket formed by completely curing the adhesive in step E150.

Alternatively, in step F160, the semiconductor package is loaded to coincide with the bottom surface of the semiconductor package in the pocket formed by secondary curing in step S150.

When the silicon sheet is used as the adhesive, in step F160, the semiconductor package is loaded to coincide with the bottom surface of the semiconductor package in the pocket formed by completely curing in step E150.

As described above, the adhesive material (liquid adhesive or silicone sheet) may be completely cured while forming the pocket in step E150, or may be cured to a degree having some viscosity and hardness as necessary. Regardless of the degree of curing, the semiconductor package is loaded so that the bottom surface of the semiconductor package coincides with the pocket formed on the adhesive.

As illustrated in FIG. 5 (a), the semiconductor package 400 is loaded such that the bottom surface of the semiconductor package 400 coincides with a pocket formed in the adhesive material 320 provided in the tray 310.

After step A (S110) to step F160 (S160) described as described above may be made by further including a G step (S170), or may further comprise a further H step (S180).

Hereinafter, the steps G170 and H180 will be described.

<< S170 >>

G step (S170), the bottom surface of the semiconductor package in step F160 (S160) for the pocket formed by curing in the step E150 (secondary curing when using a liquid adhesive, primary curing when using a silicon sheet) After loading the semiconductor package to match the pocket, it is a step of completely curing while pressing the semiconductor package by using a pressing device.

For example, as shown in FIG. 5B, a semiconductor package is loaded in a pocket formed in the adhesive material 320 in the tray 310, and the adhesive is pressed while the pressing plate 500 is pressed from the upper side of the semiconductor package. It is to harden the ash 320.

6 to 9 are cross-sectional views schematically showing a pressing device of the pressing device on the upper side of the semiconductor package in the method for forming an electromagnetic shielding film using the semiconductor package pocket according to the embodiment of the present invention.

The pressing device used in step G170 is located at the bottom of the tray 310 (see FIG. 6), and is located on the upper surface of the lower heater 611 (see FIG. 6) and the pocket for heating the tray 310 (see FIG. 6). And a pressing plate 650 (see FIG. 6) for pressing the semiconductor package 400 (see FIG. 6) located and a pressing plate height adjusting device 652 (see FIG. 6). Here, the pressing plate height adjusting device 652 (see FIG. 6) is a device for adjusting the height of the pressing plate 650 (see FIG. 6) of the semiconductor package.

Secondary curing is performed while pressing the upper surface of the semiconductor package 400 with the pressing plate 650. Here, the side of the pressing plate of the pressing device is provided with a plurality of exhaust holes, it is preferable that the outgas generated in the curing process is discharged through the exhaust holes.

As described above, a plurality of exhaust holes are provided at the edge of the pressing plate 650 and the pressing plate height adjusting device 652 is installed to adjust the degree of insertion of the solder ball of the semiconductor package 400 into the pocket formed on the adhesive pad 320. .

When the pressure applied through the pressure plate adjusting device 652 is changed according to the thickness of the adhesive pad 620, the solder ball size of the semiconductor package, and the protruding land step, for example, in the case of the semiconductor package 400, the semiconductor package 400 is Adjust the pressure to 2-5 Newtons.

In addition, when pressing the semiconductor package using the pressing plate, it is preferable that the degree of unevenness of the semiconductor package or the degree of insertion of the solder balls of the semiconductor package into the (adhesive) may be adjusted. In addition, it is more preferable to use a degassing apparatus (not shown) so that degassing can be made completely when pressing the semiconductor package using the pressing plate.

In addition, secondary curing means complete curing, and it is preferable that outgassing is completely made through a plurality of exhaust holes from the adhesive pad 620 or the silicon sheet 620.

More preferably, a plurality of vacuum exhaust holes 612 (see FIG. 6) are provided in the lower heater 611 (see FIG. 6) of the pressing device, and the tray 310 (see FIG. 6) is vacuum-adsorbed to provide a tray ( 310, see FIG. 6, it is preferable that the warpage can be corrected and flattened.

In addition, in step G170, using the lower heater 611 (see FIG. 6) of the pressing device, the pocket (in other words, the pocket formed adhesive material) is generated while heating the tray 310 (see FIG. 6) to completely cure. It is preferable to discharge outgas.

For example, complete curing is performed by heating at a temperature of 100 ° C. to 200 ° C. for 10 minutes or less in the lower heater 611 installed at the bottom of the tray 610. 612 is preferably treated to be discharged.

In addition, it is also preferable that the pressing device further includes an upper heater 655 (see FIG. 6) positioned above the pressing plate and heating the pressing plate.

When the upper heater is included in the pressing device, in step G, while the pressing plate is heated to completely cure the pocket by using the upper heater of the pressing device, the outgas discharged from the adhesive can be prevented from adhering to the pressing plate. Do.

In addition, the upper heater 655 installed on the pressing plate 650 promotes secondary curing, that is, complete curing of the adhesive pad 620, and suppresses the outgas discharged in the process from sticking to the pressing plate 650, and exhausts. It may be discharged through the hole 612 to prevent contamination during the process.

In order to suppress the influence of the flat accumulation tolerance of the tray and each semiconductor package and the pressing plate on the pressing plate of the pressing device, a spring is applied to the pressing plate of the pressing device, or the load cell and the pressure regulator are mounted on the pressing plate. It is preferable.

7 to 9 are cross-sectional views schematically showing an embodiment of the pressing plate of the pressing device on the upper side of the semiconductor package in the method for forming an electromagnetic shielding film using the semiconductor package pocket according to the embodiment of the present invention.

For further explanation of each drawing, FIG. 7 shows the individual package 400 to suppress the influence of the planar cumulative tolerance of the tray 310 and each of the semiconductor packages 400 and the presser plate 750 in the presser plate 750 of the presser. Or cross-sectional view showing an example in which a spring 753 that can apply pressure to a plurality of packages 400 is additionally installed on the pressing plate 750.

As shown in FIG. 7, in the pressing plate 750 of the pressing device, an individual package 400 or a plurality of packages may be used to suppress the influence of the planar cumulative tolerance of the tray 310 and each of the semiconductor packages 400 and the pressing plate 750. A spring 753 may be additionally installed in the press plate 750 to apply pressure to the package 400. Here, reference numeral 755 denotes an upper heater, reference numeral 752 denotes a presser plate height adjusting device, reference numeral 611 denotes a lower heater, reference numeral 612 denotes a vacuum exhaust hole, and reference numeral 320 denotes an adhesive material (adhesive pad). .

And FIG. 8 applies pressure to individual packages 400 or multiple packages 400 to suppress the effect of planar cumulative tolerances of tray 310 and each package 400 and press plate 850 on press plate 850. It is sectional drawing which showed the example which further installed the plate spring 853) which can be installed in the pressing board 850.

As exemplarily shown in FIG. 8, in the pressing plate 850 of the pressing device, the individual package 400 is used to suppress the influence of the planar cumulative tolerance of the tray 310 and each semiconductor package 400 and the pressing plate 850. Alternatively, a form in which the leaf springs 853 that can apply pressure to the plurality of packages 400 may be additionally installed on the pressing plate 850. Here, reference numeral 855 denotes an upper heater, reference numeral 852 denotes a pressing plate height adjusting device, reference numeral 611 denotes a lower heater, reference numeral 612 denotes a vacuum exhaust hole, and reference numeral 620 denotes an adhesive pad.

9 is a view of pressing the load cell 961 and the pressure regulating device 963 to suppress the influence of the stacked stacking tolerances of the tray 310 and each package 400 and the pressing plate 950 in the pressing plate 950 of the pressing device. It is sectional drawing which showed the example further installed in 950.

As shown in FIG. 9, the load cell 961 and the pressure regulating device may be used to suppress the influence of the planar cumulative tolerances of the tray 310, the semiconductor package 400, and the pressing plate 950 in the pressing plate 950 of the pressing device. It is also preferable to form 963 in addition to the pressing plate 950.

Here, the pressure regulating device 963 and the load cell 961 may perform the same function as the pressing plate height adjusting device. And the edge of the lid-shaped pressing plate 950 to secure a predetermined space so as not to contact the tray 310 to adjust the pressure applied to the package 930 through the pressure regulating device 963. Here, reference numeral 955 denotes an upper heater, reference numeral 611 denotes a lower heater, reference numeral 612 denotes a vacuum exhaust hole, and reference numeral 320 denotes an adhesive pad.

<< S180 >>

Step H180 is a step of sputtering the semiconductor package loaded in step F160 to form an electromagnetic shielding film.

10 is a schematic cross-sectional view of a sputtered semiconductor package in a method for forming an electromagnetic shielding film using pockets of a semiconductor package according to an embodiment of the present invention.

For deposition on the semiconductor package by sputtering, a conventional deposition method can be used. Therefore, a detailed description of sputtering will be omitted. However, when deposition is completed by sputtering,

electromagnetic shielding films

1040 and 1090 are formed as shown in the cross-sectional view schematically illustrated in FIG. 10.

In FIG. 10,

reference numerals

310 and 1060 denote trays,

reference numerals

320 and 1070 denote adhesive pads,

reference numerals

1030 and 1080 denote semiconductor packages, reference numeral 1065 denotes eject holes, and reference numeral 1067 denotes eject pins. It is shown.

Claims

In the electromagnetic wave shielding film forming method of a semiconductor package,

A step of confirming the external structure of the semiconductor package;

Preparing a tray for loading, attaching, and transferring the semiconductor package identified in step A;

C step of providing a pressure-sensitive adhesive (粘着材) on the top side (Top Side) of the tray prepared in step B;

Step D for preparing a stamp (Stamp) for forming a pocket (pocket) on the upper surface of the pressure-sensitive adhesive provided in step C;

E step of forming a pocket on the upper surface of the pressure-sensitive adhesive material using the stamp prepared in step D; And

A step F of loading the semiconductor package having the appearance structure confirmed in the step A into the pocket through a loading means; Electromagnetic shielding film forming method of a semiconductor package using a pocket, characterized in that it comprises a.
The method of claim 1,

In step A,

The semiconductor package,

LGA (Land Grid Array) semiconductor package composed of land-type metal electrodes on the lower surface or BGA (Ball Grid Array) semiconductor package composed of metal electrodes in solder ball shape on the lower surface of the semiconductor package using a pocket .
The method of claim 1,

In step A,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that the structure of the tray is determined by determining the unevenness or solder ball size of the bottom side of the semiconductor package.
The method of claim 1,

In step B,

The tray for loading, attaching, and transporting the semiconductor package is formed in a plane and has heat resistance.
The method of claim 1,

Of the semiconductor package in the step A,

If the lower solder ball is a semiconductor package with a large semiconductor package

The tray for loading, attaching and transporting the semiconductor package in the step B,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that the tray is provided with an ejector hole through which an ejector pin can pass.
The method of claim 1,

The tray for loading, attaching and transporting the semiconductor package in the step B,

The electromagnetic shielding film forming method of a semiconductor package using a pocket, characterized in that the tray is provided with a discharge hole and a discharge hole opening and closing device for discharging the outgas generated in the process of forming the pocket or the sputtering process.
The method of claim 5,

In step B,

The eject hole and the eject pin,

In response to one of the semiconductor packages,

Method for forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that each one or a plurality are provided.
The method of claim 6,

In step B,

The discharge hole and the discharge hole opening and closing device,

In response to one of the semiconductor packages,

Method for forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that each one or a plurality are provided.
The method of claim 1,

The adhesive material is a liquid adhesive,

In step C,

Method for forming an electromagnetic wave shielding film of a semiconductor package using a pocket, characterized in that the entire surface of the tray is formed in a flat planar liquid adhesive applied to the surface and the surface leveling (Surface leveling) process.
The method according to claim 1 or 5,

The adhesive material is a liquid adhesive,

The tray is provided with an ejector hole,

In step C,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, wherein a liquid adhesive is linearly applied in a lattice pattern on a surface of the tray provided with the ejector hole and a surface leveling process is performed.
The method according to claim 1 or 6,

The adhesive material is a liquid adhesive,

The tray is provided with an outgas discharge hole and a discharge hole opening and closing device,

In step C,

The discharge hole is blocked by the discharge hole using the discharge hole opening and closing device,

Method for forming a semiconductor package electromagnetic shielding film using a pocket, characterized in that the entire surface of the tray to apply a liquid adhesive evenly and surface leveling (Surface leveling) process.
The method of claim 1,

The adhesive material is a liquid adhesive,

The step C,

CA step of applying the liquid adhesive on the upper surface of the tray; And

CB step of semi-curing the liquid adhesive by first curing the liquid adhesive applied in the CA step; Electromagnetic shielding film forming method of a semiconductor package using a pocket, characterized in that it comprises a.
The method of claim 1,

The adhesive material is a silicon sheet,

In step C,

A semiconductor package using a pocket, wherein the upper and lower surfaces of the tray are attached to a top surface of the tray by attaching a silicon sheet having a flat, uniform thickness and adhesiveness to the upper surface of the tray. Electromagnetic shielding film formation method.
The method of claim 13,

In step C,

Protective film is attached to the upper and lower surfaces of the silicon sheet (sheet),

Method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that for removing the protective film attached to the upper surface of the tray.
The method of claim 13,

Of the semiconductor package in the step A,

If the lower solder ball is a semiconductor package with a large semiconductor package

The tray for loading, attaching and transporting the semiconductor package in the step B is a tray having an ejector hole through which an ejector pin can pass. Method of forming a shielding film.
The method of claim 12,

In the CA step,

The liquid adhesive is applied and surface leveling is performed so that the thickness of the liquid adhesive applied to the upper surface of the tray is thicker than the thickness of the unevenness of the semiconductor package or the size of the solder balls of the semiconductor package. Electromagnetic shielding film formation method of a semiconductor package using the said pocket.
The method of claim 1,

The adhesive material is a silicon sheet,

In step C,

The thickness of the silicon sheet is formed to be thicker than the thickness of the unevenness of the semiconductor package or the size of the solder ball of the semiconductor package.
The method of claim 15,

In step D,

Forming a hole of a lattice pattern in the silicon sheet; and forming an electromagnetic shielding film of a semiconductor package using a pocket.
The method of claim 18,

The hole of the grid pattern formed in the silicon sheet in the step D,

The electromagnetic wave shielding film forming method of a semiconductor package using a pocket, characterized in that formed in the step F is smaller than the lower surface of the semiconductor package to be loaded to the upper side of the tray.
The method of claim 1,

The adhesive material is a liquid adhesive,

The stamp in the step D,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that the stamp having a structure corresponding to the area of the lower surface of the semiconductor package identified in step A.
The method of claim 20,

The stamp is,

The projecting surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package is a flat surface, characterized in that the electromagnetic shielding film forming method of a semiconductor package using a pocket.
The method of claim 20,

Protruding surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package has a structure corresponding to the unevenness of the semiconductor package or the size of the solder ball of the semiconductor package formed electromagnetic shielding film of the semiconductor package using a pocket Way.
The method of claim 20,

And a plurality of stamps are provided to form pockets corresponding to the plurality of semiconductor packages loaded on the tray.
The method of claim 1,

The adhesive material is a silicon sheet,

The stamp in the step D,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that the stamp having a structure corresponding to the area of the lower surface of the semiconductor package identified in step A.
The method of claim 24,

The stamp is,

Method for forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that the projecting surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package is a flat surface.
The method of claim 24,

Protruding surface of the stamp having a structure corresponding to the area of the lower surface of the semiconductor package has a structure corresponding to the unevenness of the semiconductor package or the size of the solder ball of the semiconductor package, characterized in that the electromagnetic shielding film forming method of the semiconductor package using a pocket .
The method of claim 24,

A method for forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that a plurality of the stamp is provided to form a pocket corresponding to the plurality of semiconductor packages loaded on the tray.
The method of claim 1,

The adhesive is a liquid adhesive,

In step E,

Method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that to form a pocket in which the semiconductor package can be loaded by secondary curing while pressing the adhesive material provided on the upper surface of the tray with the stamp prepared in step D. .
The method of claim 1,

The adhesive is a liquid adhesive,

In step E,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, wherein the stamp prepared in step D is completely cured while pressing the adhesive provided on the upper surface of the tray to form a pocket in which the semiconductor package can be loaded.
The method of claim 29,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, wherein the liquid adhesive is completely cured and the pocket for loading the semiconductor package is formed while the liquid adhesive is completely cured.
The method of claim 1,

The adhesive material is a silicon sheet,

In step E,

The method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that to form a pocket in which the package can be loaded by first curing while pressing the adhesive provided on the upper surface of the tray with the stamp prepared in step D.
The method of claim 1,

The adhesive material is a silicon sheet,

In step E,

The method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that to form a pocket for the package can be loaded by completely curing while pressing the adhesive material provided on the upper surface of the tray with the stamp prepared in step D.
The method of claim 32,

A method for forming an electromagnetic wave shielding film for a semiconductor package using a pocket, wherein the silicon sheet is completely cured and the pocket for loading the semiconductor package is formed while the silicon sheet is completely cured.
The method of claim 29 or 32,

In step F,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that for loading the semiconductor package to match the bottom surface of the semiconductor package to the pocket formed by completely curing in step E.
The method of claim 28 or 31,

In step F,

Loading the semiconductor package to coincide with a bottom surface of the semiconductor package in the pocket formed by curing in step E,

G step of completely curing while pressing the semiconductor package using a pressing device; Electromagnetic shielding film forming method of a semiconductor package using a pocket, characterized in that it further comprises.
The method of claim 35, wherein

The pressing device used in the G stage,

A lower heater positioned below the tray and heating the tray;

A pressing plate for pressing the semiconductor package located on an upper surface of the pocket; And

Located on the side of the pressing plate, the pressing plate height adjusting device for adjusting the height of the pressing plate of the semiconductor package; Electromagnetic shielding film forming method of a semiconductor package using a pocket, characterized in that it comprises a.
The method of claim 36,

The lower heater of the pressing device used in the step G is provided with a plurality of vacuum suction holes (Vacuum Suction holes),

The pressing device,

A method of forming an electromagnetic shielding film of a semiconductor package using a pocket, wherein the tray may be vacuum suctioned to correct and flatten warpage of the tray.
The method of claim 36,

In step G,

The method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that to discharge the outgas generated by heating the tray so that the pocket is completely cured using the lower heater of the pressing device.
The method of claim 36,

The pressing device used in the step G,

And an upper heater positioned above the press plate and heating the press plate.
The method of claim 39,

In step G,

Electromagnetic waves of the semiconductor package using the pocket, characterized in that the pressing plate is heated to completely cure the pocket by using the upper heater of the pressing device, and the outgas discharged from the adhesive material is contaminated to contaminate the pressing plate. Method of forming a shielding film.
The method of claim 36,

In step G,

A side of the pressing plate of the pressing device is provided with a plurality of exhaust holes, the outgoing gas generated during the hardening process to discharge the electromagnetic wave shielding film of the semiconductor package using a pocket, characterized in that the exhaust hole.
The method of claim 36,

In step G,

The method of forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that when pressing the semiconductor package using the pressing plate to adjust the degree of unevenness of the semiconductor package or the solder ball of the semiconductor package.
The method of claim 35, wherein

In step G,

Method for forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that the degassing exhaust device is used so that outgassing is completely pressed when pressing the semiconductor package by using the pressing plate.
The method of claim 36,

In step G,

In the pressing plate of the pressing device,

Forming an electromagnetic shielding film of a semiconductor package using a pocket, characterized in that for further suppressing the influence of the plane cumulative tolerance of the tray, each semiconductor package and the pressing plate, a spring for applying pressure to the semiconductor package is further provided on the pressing plate. Way.
The method of claim 36,

In step G,

In the pressing plate of the pressing device,

And a load cell and a pressure regulating device are further provided on the pressing plate to suppress the influence of the planar cumulative tolerance of the tray, each of the semiconductor packages and the pressing plate.
The method of claim 1,

And sputtering the semiconductor package loaded in the step F. The method of claim 1, further comprising sputtering the semiconductor package.