WO2015147509A1

WO2015147509A1 - Temporary adhesive film for thermosetting semiconductor wafer, laminate comprising same, and method for separating laminate

Info

Publication number: WO2015147509A1
Application number: PCT/KR2015/002829
Authority: WO
Inventors: 채성원; 안흥기; 기세훈
Original assignee: 주식회사 이녹스
Priority date: 2014-03-28
Filing date: 2015-03-23
Publication date: 2015-10-01
Also published as: KR101532756B1

Abstract

The present invention relates to a temporary adhesive film for a thermosetting semiconductor wafer, a laminate comprising the same, and a method for separating the laminate and, more specifically, to a temporary adhesive film for a thermosetting semiconductor wafer, a laminate comprising the same, and a method for separating the laminate, wherein the temporary adhesive film has an excellent filling ability for bumps formed on a semiconductor wafer, is not separated during thinning and backside processing processes of the semiconductor wafer while being easily separated from the semiconductor wafer after the completion of the processes, and enables easy process handling due to excellent compatibility with equipment used for the processes.

Description

Temporary adhesive film for thermosetting semiconductor wafers, laminates and laminate separation methods comprising the same

The present invention relates to a temporary adhesive film for a thermosetting semiconductor wafer, a laminate including the same, and a method for separating the laminate. More particularly, the present invention provides excellent filling properties for bumps formed on a semiconductor wafer. A temporary adhesive film for a thermosetting semiconductor wafer which is not separated during the processing process and is easily separated from the semiconductor wafer after the end of the process, and which has excellent compatibility with the equipment used in the process, which makes the process easy to handle, and a laminate including the same. A method for separating the laminate.

Integrated circuits, power semiconductors, light emitting diodes, photonic circuits, microelectromechanical systems (MEMS), embedded passive arrays, packaging interposers, and Hosts of other silicon- and compound semiconductor-based microdevices are collectively created in arrays on wafer substrates ranging in diameter from 1 to 12 inches. These devices are then subjected to a macroscopic environment, for example, by interconnection with a printed wiring board (PWB) or a flexible printed circuit board disclosed in Korean Patent No. 1030497. ) And separated into individual devices or dies packaged to allow actual interfacing. It is becoming increasingly popular to build device packages on or around the die while the die is part of the wafer array. Also called wafer-level packaging, this implementation reduces overall packaging costs and typically achieves higher interconnect densities than conventional packages, which typically have many times larger external dimensions than actual devices. There is an advantage.

Until recently, interconnection schemes were generally limited to two dimensions, meaning that the electrical connections between the device and the corresponding board or packaging surface on which the device was mounted were all arranged in a horizontal or x-y plane. The current microelectronics industry has found that by stacking and interconnecting devices vertically, i.e. in the z-direction, an increase in device interconnect density and correspondingly a reduction in signal delay (which results in shorter distances between electrical connection points) Recognizing that this can be achieved, R & D continues in this direction.

Two common requirements for stacking these devices are thinning the device from the face in the through-wafer direction, and typically through-silicon-via or "TSV" on the back of the device. To form through-wafer electrical connections, referred to as. On the other hand, such thinning of semiconductor devices is now becoming a standard implementation even when the devices are not packaged in a stacked configuration, because they facilitate heat dissipation and are useful for smaller electronic products such as much smaller mobile phones.

Accordingly, in order to reduce the profiles of the semiconductor devices when the semiconductor devices or corresponding packages to which the device belongs are stacked and to simplify the formation of backside electrical connections on the devices, the semiconductor devices may be thinned to 100 μm or less. Interest in things is increasing.

However, device wafers thinned to less than 100 μm, particularly thinned to less than 60 μm, are extremely fragile and require development of a method for preventing cracks and breakage. In addition, although various wafer wands and chucks have been developed for transferring ultra-thin device wafers, back-processing includes steps such as chemical mechanical polishing (CMP), lithography, etching, deposition, annealing and cleaning. There is still a problem regarding how to support wafers during grinding and TSV-forming processes. This is because the various steps taken during or after thinning impose high thermal and mechanical stresses on the device wafer.

In order to solve these problems, the device wafers before the thinning recoil are faced down and bonded to the carrier wafer with a polymer adhesive, and then the thinning process and the backside treatment have been studied and implemented. This is because the carrier wafer protects the device wafer from stresses occurring during the thinning and / or post-thinning process and facilitates transfer. The carrier wafer is removed from the thinned device wafer upon completion of thermal, thermomechanical or chemical processes.

On the other hand, in the past, the adhesive composition is applied to the device wafer or the carrier wafer when the carrier wafer is adhered to the device wafer, and the rest is laminated, and then a method of curing the heat or ultraviolet rays is used. It is assumed that it should be applied evenly over a certain thickness in consideration of the bump height of the bed, and it is difficult to meet such a premise every time when applying, and if the premise is not satisfied, a gap occurs between the device wafer and the carrier wafer, and the device wafer There is a problem that the thin film process, the backside processing process cannot be performed, and the thinned device wafer is broken.

In addition, since the adhesive composition is applied every time in the bonding process between the device wafer and the carrier wafer, and the two substrates must be bonded after the first curing, the process becomes complicated and the process time is extended.

Furthermore, in order to solve the above problems, there may be a problem in that the filling and adhesion between the bumps on the film and the device wafer are lower than that of the adhesive composition when the temporary adhesive film is used instead of the adhesive composition. And adhesion force may cause voids between the film and the device wafer to cause frequent defects in the vacuum and high temperature operations included in the thin film and the back surface processing.

Furthermore, there is a very difficult problem in handling the process because it is not easy to be compatible with the thin film of the device wafer, the back processing equipment used in the manufacturing of the film type.

The present invention has been made to solve the above-mentioned problems, the first problem to be solved by the present invention, the film used for temporarily bonding the device wafer to the carrier wafer for the thinning of the device wafer, the film is not a composition By implementing it in the form, it is possible to prevent the gap between the device wafer and the carrier wafer, which may occur during the thinning and backside process, and to peel off, simplify the adhesion process between the two substrates and shorten the adhesion process time, thereby contributing to productivity improvement. The present invention provides a temporary adhesive film for a thermosetting semiconductor wafer which can be easily detached without affecting the device wafer when the carrier wafer is required to be removed.

The second problem to be solved by the present invention is a laminate comprising a temporary adhesive film for thermosetting semiconductor wafers according to the present invention can smoothly perform the thinning and backside of the device wafer, the reliability of the thinned device wafer is not degraded It is to provide a method for separating the sieve and laminate.

The present invention to solve the first problem described above, the core layer; A first adhesive layer for bonding the carrier wafer formed on one surface of the core layer; And a second adhesive layer for bonding the device wafer formed on the other surface of the core layer, and provides a temporary adhesive film for a semiconductor wafer that satisfies the following relational formula (1).

[Relationship 1]

According to a preferred embodiment of the present invention, the total thickness of the temporary adhesive film may be 65 ~ 150㎛.

According to another preferred embodiment of the present invention, the temporary adhesive film may satisfy the following relational formula 2.

[Relationship 2]

According to another preferred embodiment of the present invention, the temporary adhesive film may satisfy the following equation 3.

[Relationship 3]

According to another preferred embodiment of the present invention, the thickness of the second adhesive layer included in the temporary adhesive film may be 48 ~ 70㎛.

According to another preferred embodiment of the present invention, the thickness of the first adhesive layer is 5 ~ 10㎛, the thickness of the core layer may be 10 ~ 90㎛.

According to another preferred embodiment of the present invention, the thickness of the core layer may be 20 ~ 90㎛.

According to another preferred embodiment of the present invention, the temporary adhesive film may satisfy the following relational expression 4.

[Relationship 4]

According to another preferred embodiment of the present invention, the first adhesive layer and the core layer may satisfy the following conditions (1) and (2).

(1) The adhesive strength measured by the following measuring method 1 is 50 ~ 200 gf / 25mm, (2) The adhesive strength measured by the following measuring method 2 is 100 ~ 300 gf / 25mm.

* Adhesive strength measurement method 1

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were affixed to the first adhesive layer surface of the specimens with SUS 304 with 2 kg of rollers in accordance with JIS Z 0237 and subjected to a temperature of 25 ° C and a relative humidity of 55%. After storage for 1 hour at 180 ° bond strength is measured at a peel rate of 300 mm / min using a tensile tester.

* Adhesive strength measurement method 2

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were affixed to the first adhesive layer surface of the specimens with SUS 304 with 2 kg of rollers in accordance with JIS Z 0237 and subjected to a temperature of 25 ° C and a relative humidity of 55%. After storage for 1 hour at 60 ℃ again after the heat treatment for 60 minutes at 200 ℃ using a tensile tester to measure the 180 ° adhesive strength at a peel rate of 300mm / mim.

According to another preferred embodiment of the present invention, the second adhesive layer and the core layer may satisfy the following conditions (3), (4).

(3) The adhesive strength measured by the following measuring method 3 is 2 ~ 10 gf / 25mm, (4) The adhesive strength measured by the following measuring method 4 is 5 ~ 25 gf / 25mm.

* Adhesive Strength Measurement Method 3

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were attached to the surface of the second adhesive layer on the SUS 304 with 2 kg of rollers in accordance with JIS Z 0237, and the temperature was 25 ° C and 55% relative humidity. After storage for 1 hour at 180 ° bond strength is measured at a peel rate of 300 mm / min using a tensile tester.

* Adhesive Strength Measurement Method 4

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were attached to the surface of the second adhesive layer on the SUS 304 with 2 kg of rollers in accordance with JIS Z 0237, and the temperature was 25 ° C and 55% relative humidity. After storage for 1 hour at 60 ℃ again after the heat treatment for 60 minutes at 200 ℃ using a tensile tester to measure the 180 ° adhesive strength at a peel rate of 300mm / mim.

According to another preferred embodiment of the present invention, the first adhesive layer and the second adhesive layer may include a silicon-based adhesive binder.

According to another preferred embodiment of the present invention, the core layer is polyetheretherketone (PEEK), polyethyleneimine (PEI), polyimide (PI) and polyethersulfone (polyethersulfone, PES) It may be any one or more films selected from the group consisting of.

On the other hand, the present invention to solve the above-mentioned second problem, the temporary adhesive film according to the present invention; A carrier wafer formed facing the first adhesive layer of the temporary adhesive film; And a device wafer formed to face the second adhesive layer of the temporary adhesive film. The laminate includes a temporary adhesive film.

According to a preferred embodiment of the present invention, a protective layer may be further included between the device wafer and the temporary adhesive film.

According to another preferred embodiment of the present invention, the protective layer may comprise a curable silicone resin.

According to another preferred embodiment of the present invention, the adhesive force between the first adhesive layer and the carrier wafer may satisfy the following conditions (5) and (6).

(5) The adhesive strength measured by the following measuring method 5 is 50 ~ 200 gf / 25mm, (6) The adhesive strength measured by the following measuring method 6 is 100 ~ 300 gf / 25mm.

* Adhesive Strength Measurement Method 5

Cut the temporary adhesive film into 2.5cm × 10cm lengths, and attach the specimen to the first adhesive layer on the silicon wafer without any surface treatment in accordance with JIS Z 0237. And 180 ° adhesive strength at a peel rate of 300 mm / min using a tensile tester after storage for 1 hour at 55% relative humidity.

* Adhesive Strength Measurement Method 6

Cut the temporary adhesive film into 2.5cm × 10cm lengths, and attach the specimen to the first adhesive layer on the silicon wafer without any surface treatment in accordance with JIS Z 0237. And then stored for 1 hour at 55% relative humidity conditions and after the heat treatment for 60 minutes at 200 ℃ again measured the 180 ° adhesive strength at a peel rate of 300mm / mim using a tensile tester.

According to another preferred embodiment of the present invention, the adhesive force between the second adhesive layer and the device wafer may satisfy the following conditions (7) and (8).

(7) The adhesive strength measured by the following measuring method 7 is 2 ~ 10 gf / 25mm, (8) The adhesive strength measured by the following measuring method 8 is 5 ~ 25 gf / 25mm.

* Measuring method of adhesive strength 7

According to JIS Z 0237, the specimen cut off the temporary adhesive film in the size of 2.5cm × 10cm in length and the silicon adhesive agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) Attached with a 2kg roller on a spin-coated silicon wafer with a thickness and stored for 1 hour at a temperature of 25 ° C and a relative humidity of 55%, and measured a 180 ° adhesive strength at a peel rate of 300 mm / min using a tensile tester. do.

* Adhesive Strength Measurement Method 8

According to JIS Z 0237, the specimen cut off the temporary adhesive film in the size of 2.5cm × 10cm in length and the silicon adhesive agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) Attached to a silicon wafer spin coated with a thickness of 2kg with a roller and stored for 1 hour at a temperature of 25 ℃ and a relative humidity of 55%, and then heat treatment at 200 ℃ for 60 minutes and then using a tensile tester of 300mm / mim The 180 ° adhesive strength is measured at the peel rate.

In addition, in order to solve the second problem described above, the present invention, the carrier wafer is bonded to face the first adhesive layer included in the temporary adhesive film according to the present invention, on the second adhesive layer included in the temporary adhesive film Bonding the device wafers to face each other to form a laminate; (2) cutting the temporary adhesive film and the device wafer interface at one end of the laminate; And (3) removing the carrier wafer and the temporary adhesive film from the laminate by separating the carrier wafer and the temporary adhesive film at an angle from one end of the cut laminate at a predetermined angle. Provides a method for separating sieves.

According to a preferred embodiment of the present invention, the device wafer of the step (1) comprises a protective layer on one surface facing the second adhesive layer, the protective layer is bonded to the second adhesive layer, step (2) Can cut the temporary adhesive film and the protective layer interface.

According to another preferred embodiment of the present invention, the step (a) between the step (2) and the step (3) of the thin film of the other surface of the device wafer that does not face the temporary adhesive film; And (b) performing back processing on the thin film-treated surface.

Hereinafter, the term used by this invention is demonstrated.

As used herein, the term “formed on a layer” or “layered” includes both cases in which the layer is formed in direct contact with the layer or indirectly after the insertion of one or more other layers on the layer. For example, "B layer formed on A layer", A layer and B layer are directly facing or contacting, or after the third, fourth C1 layer, C2 layer is formed on A layer, B layer is formed on the C2 layer. Includes all cases formed.

The temporary adhesive film for thermosetting semiconductor wafers of the present invention is used when the device wafer is temporarily bonded to the carrier wafer for thinning the device wafer, so that the device may occur during the thinning and backside process of the device wafer compared to the adhesive of the conventional composition type. It is possible to prevent gaps or peeling between the wafer and the carrier wafer, to simplify the adhesion process between the two substrates and to shorten the time required for the adhesion process, thereby contributing to productivity improvement. In addition, when the carrier wafer needs to be removed, the device wafer can be easily detached without affecting the device wafer, thereby reducing the reliability of the thinned device wafer. Furthermore, the laminate including the temporary adhesive film of the present invention is more suitable for thinning the device wafer so that the thinning and the backside process can be smoothly progressed, and the separation of the desired device wafer from the laminate can be easily performed after the end of the process. can do. Furthermore, the laminate including the temporary adhesive film of the present invention has excellent compatibility with conventional equipment used for device wafer thinning and back processing, and is easy to handle in the process.

1 is a schematic cross-sectional view of a temporary adhesive film according to an embodiment of the present invention.

Figure 2 is a schematic cross-sectional view of a laminate according to an embodiment of the present invention.

Figure 3 is a schematic cross-sectional view of a laminate according to an embodiment of the present invention.

Figure 4 is a schematic diagram of the separation process according to an embodiment of the present invention.

Figure 5 is a schematic diagram of a separation process according to an embodiment of the present invention.

Figure 6 is a schematic diagram of the separation process according to an embodiment of the present invention.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

As described above, in the related art, an adhesive composition is applied to a device wafer or a carrier wafer, and then the other one is laminated and bonded to the two wafers by curing such as heat and ultraviolet rays. It should be applied evenly over a certain thickness in consideration of the bump height present in the film.However, it is difficult to apply it evenly every time during the process.In this case, the gap between the device wafer and the carrier wafer occurs so that the thin film process and the backside process of the device wafer are performed. There was a problem such that it could not be performed and / or the thinned device wafer was broken. In addition, the adhesive composition is applied every time in the bonding process between the device wafer and the carrier wafer, and the two substrates must be adhered after the first curing, thereby increasing the complexity of the process and the time required for the process. Furthermore, in order to solve the above problems, there was a problem in that the filling and adhesion between the bumps of the film and the surface of the device wafer were significantly lower than those of the adhesive composition when the film was manufactured by the temporary adhesive film type instead of the adhesive composition. The adhesiveness and adhesion have a problem in that voids are generated between the film and the device wafer to cause frequent defects in the vacuum and high temperature operations included in the thin film and the backside processing. Furthermore, there is a very difficult problem in handling the process because it is not easy to be compatible with the thin film of the device wafer, the back processing equipment used in the manufacturing of the film type.

In the present invention, the core layer; A first adhesive layer for bonding the carrier wafer formed on one surface of the core layer; And a second adhesive layer for adhering the device wafer formed on the other surface of the core layer. The above-described problem was sought by providing a temporary adhesive film for a semiconductor wafer satisfying the following relational formula 1.

[Relationship 1]

This prevents gaps or peeling between the device wafer and the carrier wafer, which may occur during the thinning and backside of the device wafer, compared to conventional composition type adhesives, and simplifies the adhesion process between the two substrates and shortens the time required for the adhesion process. It can contribute to productivity improvement, and it can be detached more easily without affecting the device wafer when the carrier wafer needs to be removed, thereby preventing the deterioration of the reliability of the thinned device wafer. Excellent compatibility with the conventional equipment used in the process can be carried out more easily.

1 is a cross-sectional view of a temporary adhesive film for a thermosetting semiconductor wafer according to an embodiment of the present invention, the temporary adhesive film 10 according to the present invention is a core layer 12, a carrier wafer formed on one surface of the core layer A first adhesive layer 11 for bonding and a second adhesive layer 13 for bonding the device wafer formed on the other surface of the core layer may be included. In addition, the layer and the layer may directly face each other and may face each other indirectly by interposing one or more layers.

Prior to examining each layer included in the temporary adhesive film for thermosetting semiconductor wafer according to the present invention, the following relational formula 1, which the temporary adhesive film according to the present invention must satisfy, will be described first.

[Relationship 1]

The temporary adhesive film according to the present invention is a carrier to protect the device wafer from thermal and mechanical stresses applied to the device wafer in the thinning process and / or backside processing of the device wafer, and to facilitate the process such as transfer during the process. As a film used for temporarily attaching a wafer to a device wafer, conventionally, a method of applying to a device wafer with an adhesive composition rather than a film form and temporarily bonding a carrier wafer has been used. However, the process of applying the adhesive composition to the device wafer and first curing it and then bonding the carrier wafer increased the manufacturing time, required a complicated manufacturing process, and the vaporization of the solvent contained in the adhesive composition generated during the first curing There was an issue that was harmful to health. Thus, the present inventors can solve the above problems by making the film form, not the composition form has led to the present invention.

However, in the case of the film form, there may be a problem in that the filling and the adhesion between the temporary adhesive film and the device wafer are sufficiently wrapped around the bumps on the device wafer than in the composition form, and in the conventional device wafer thinning process and / or backside processing There is a compatibility problem with the equipment used, the temporary adhesive film according to the present invention must satisfy the above relationship 1.

Only when the relationship 1 is satisfied, the bump filling property and adhesion between the device wafer and the temporary adhesive film may be improved, and the compatibility with the conventional equipment may be improved, so that the device wafer may be more suitable for thinning and / or backside processing of the device wafer. If the value of Equation 1 in Equation 1 exceeds 54, despite applying some mechanical pressure in the process of placing a temporary adhesive film on the device wafer, attaching the carrier wafer onto the temporary adhesive film, and then thermally curing Adhesion between the device wafer and the temporary adhesive film may be degraded, causing voids between the device wafer and the temporary adhesive film, which may cause shrinkage / expansion in vacuum and high temperature conditions during thinning and / or back processing. There may be a problem that is broken or lowers the reliability. In addition, there may be a problem in that the compatibility with the equipment used in the conventional thin film and / or back processing to replace or redesign the equipment. If the value of Equation 1 is less than 23 in Equation 1, there may be a problem of deterioration of function of each layer as the thickness becomes too thin and the thicknesses of the three layers included in the limited thickness do not reach the desired levels.

On the other hand, the temporary adhesive film according to the present invention to satisfy the relation 1 can satisfy the following relation 2 to express the adhesion and adhesion between the device wafer and the carrier wafer more improved.

[Relationship 2]

On the upper and lower surfaces of the core layer 12 included in the temporary adhesive film of the present invention, a first adhesive layer 11 and a second adhesive layer 12 are formed, and the core layer 12 is a carrier of the temporary adhesive film. The lamination process is more smoothly performed when laminating the temporary adhesive film on the wafer, and the stress generated when the carrier wafer and the device wafer are ground on the back surface of the device wafer of the laminated laminate is applied to the second adhesive layer and the core layer. It is to remove the complex, and is responsible for easily removing the temporary adhesive film from the carrier wafer after the carrier wafer and the device wafer is separated. Therefore, when the thickness of the core layer 12 becomes thinner than a predetermined thickness, the core layer 12 may not serve as a sufficient support in a high temperature and chemical environment in which the carrier wafer and the device wafer are attached to each other. Creases may occur, resulting in a gap between the carrier wafer and the device wafer, which may reduce the reliability of the device wafer and may not allow any further thinning and / or back processing. In addition, when the thickness of the core layer 12 becomes thicker than a predetermined thickness, it is not very desirable to thin the film by increasing the overall thickness of the temporary adhesive film, and when the thickness of the core layer 12 is increased while satisfying the above relation 1 Since the thickness of the remaining first adhesive layer and / or the second adhesive layer may be relatively reduced, the adhesion strength or the adhesion strength may be excessively increased, and the increased thickness of the core layer may reduce the filling and adhesion between the device wafer and the temporary adhesive film. There is a problem that can be caused. Therefore, in order to eliminate such a problem, the above relation 2 may be satisfied. When satisfying relation 2, the thickness of the first adhesive layer and / or the second adhesive layer is ensured within the total thickness of the temporary adhesive film, thereby functioning as a temporary adhesive film, and at the same time, a core layer having a predetermined thickness is included to provide sufficient support. And adhesion to the bumps of the device wafer can be further improved.

In addition, the temporary adhesive film according to the present invention may satisfy the following relational formula 3, in addition to the relations 1 and 2.

[Relationship 3]

By further satisfying the relation 3, the temporary adhesive film according to the present invention can be maintained at a desired level by the thickness of the first adhesive layer is a certain ratio of the total thickness of the temporary adhesive film to the desired level. If the relation 3 is less than 0.8, when the carrier wafer is separated from the temporary adhesive film for recycling of the carrier wafer as the adhesive force between the carrier wafer and the temporary adhesive film increases above a desired level as the thickness of the first adhesive layer increases. There may be a problem that is not separated or the carrier wafer is torn or broken. In addition, the increased thickness of the first adhesive layer in the temporary adhesive film having a limited thickness in terms of equipment compatibility, adhesion to the device wafer, and thinning of the film reduces the thickness of the core layer and / or the second adhesive layer, thereby degrading the function of each layer. There may be a problem. If Equation 3 exceeds 2.1, the thickness of the first adhesive layer may be so thin that the adhesion force of the carrier wafer is significantly reduced, thereby causing the carrier wafer to be peeled off and separated during the thinning and / or backside processing of the device wafer.

In addition, the temporary adhesive film according to the present invention may satisfy the relation 1 to 3, the thickness of the second adhesive layer included in the temporary adhesive film may be 48 ~ 70㎛. The second adhesive layer is a layer facing the device wafer, and the thickness of the second adhesive layer should consider both the adhesion between the device wafer and the temporary adhesive film, the adhesive force, and the separability of the temporary adhesive film after the thinning / rear processing process. If the thickness is less than 48 µm, the gap between the device wafer and the temporary adhesive film is significantly reduced due to the significant decrease in the filling, adhesion and adhesion with the bumps present on the device wafer. There is a problem that the thinning and / or backside processing process cannot be performed or the device wafer reliability of the completed process can be significantly degraded. If the thickness of the second adhesive layer exceeds 70, the adhesion force with the device wafer is significantly increased. Temporary adhesion of device wafers after thinning / rear finishing When the separation is not possible, there may be a problem that the separation of the temporary adhesive film may be impossible or the temporary adhesive film may remain on the device wafer, or the reliability of the device wafer may be degraded in the process of applying a stronger force for separation.

In addition, the temporary adhesive film according to the present invention may satisfy the following relational formula 4, while satisfying the condition of the thickness range of the relational formula 1 to 3 and the second adhesive layer.

[Relationship 4]

In the case of the temporary adhesive film that satisfies the above relation 4, the use of the semiconductor wafer is significantly prevented from the occurrence of various problems which may occur when the device wafer, the carrier wafer are attached, the device wafer thin film / after processing, and the device wafer / carrier wafer are separated. As a result, it is possible to express better physical properties of the temporary adhesive film and at the same time contribute to the thinning of the film. If the range of the relation 4 is not satisfied, any one or more of the problems caused by the above-described relations 1 to 3 and the thickness of the second adhesive layer may occur, and there is a problem in that the thickness of the film cannot be achieved.

As described above, each layer included in the temporary adhesive film according to the present invention satisfying the above-described relations and conditions will be described below, regardless of the order in which the layers are formed.

First, the 1st adhesive layer (11 of FIG. 1) is demonstrated.

The first adhesive layer 11 serves to bond the carrier wafer, and the carrier wafer is not separated until the carrier wafer and the temporary adhesive film are separated from the device wafer after the thinning / back processing process of the desired device wafer. It can hold sufficient adhesion. Preferably, the adhesive force between the first adhesive layer 11 and the core layer 12 may satisfy the following conditions (1) and (2).

First, the adhesive strength measured under the condition (1) is to attach the first adhesive layer surface of the specimen to the SUS 304 with a roller of 2kg in accordance with JIS Z 0237 After storage for 1 hour at a temperature of 25 ℃ and 55% relative humidity conditions using a tensile tester to measure the 180 ° adhesive strength at a peel rate of 300 mm / min. In addition, the adhesive strength measured under the condition (2) is to attach the first adhesive layer surface of the specimen to the SUS 304 with a roller of 2 kg in accordance with JIS Z 0237 for the specimen cut into a temporary, adhesive film having a size of 2.5 cm x 10 cm. After storage for 1 hour at a temperature of 25 ℃ and 55% relative humidity conditions after the heat treatment for 60 minutes at 200 ℃ again after the end of the heat test using a tensile tester to measure the 180 ° adhesive strength at a peel rate of 300mm / mim.

The adhesive strength is the adhesive force between the first adhesive layer and the SUS404, but when the adhesive strength is satisfied, it is possible to achieve the desired adhesive strength level required between the first adhesive layer and the carrier wafer layer. Therefore, when the adhesive strength is satisfied, the carrier adhesive may be separated during the thin film / rear processing process of the device wafer, and thus the device wafer may not be supported, the device wafer may be broken, and the problem of making transfer difficult during the process may not occur. . In addition, since the carrier wafer and the temporary adhesive film in the bonded state after the device wafer separation are not discarded, but the carrier wafer must be recycled again, the adhesion force of the carrier wafer and the temporary adhesive film must also be below a certain value to facilitate separation. Accordingly, the adhesive strength by the measuring method according to condition (1) may be 50 to 200 gf / 25mm, and the adhesive strength by the measuring method according to condition (2) is most preferably maintained at 100 to 300 gf / 25mm. Do.

The first adhesive layer 11 may be formed through an adhesive composition including an adhesive resin and a solvent, and may further include a crosslinking agent, a curing accelerator, and the like. Specific types and mixing ratios of the adhesive composition may be used without limitation when the adhesive strength may be expressed. However, preferably, the adhesive composition may include 60 to 200 parts by weight of a solvent with respect to 100 parts by weight of an adhesive resin, which may be advantageous for expression of adhesive strength. In addition, the crosslinking agent may be included in an amount of 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive resin, and in the case of a curing catalyst, 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive resin. It can be included as a wealth.

Specifically, the adhesive resin may be a thermosetting adhesive resin, and may be used without limitation as long as there is no problem in chemical resistance and heat resistance so as to smoothly perform the thin film / back processing process of the device wafer, and may express the desired adhesive force. have. As a non-limiting example, rubber, epoxy, acrylic, silicone resin, and the like may be included alone or in combination of two or more thereof. As a non-limiting example of the rubber system, acrylonitrile butadiene rubber, butadiene rubber, butyl rubber, styrene butadiene rubber, nitrile rubber and the like can be used alone or in combination of two or more. In addition, as a non-limiting example of the epoxy resin, glycidyl ether type epoxy resin, glycidyl amine type epoxy resin, glycidyl ester type epoxy resin, linear aliphatic epoxy resin, alicyclic type ( cyclo aliphatic) epoxy resin, heterocyclic containing epoxy resin, substituted epoxy resin, naphthalene-based epoxy resin and derivatives thereof, and may be a bi- or poly-functional resin, these may be included alone or in combination of two or more A well-known epoxy resin can be used. In the case of acrylic resin, methyl methacrylate, ethyl methacrylate, isobutyl methacrylate, normal-butyl methacrylate, normal-butyl methyl methacrylate, acrylic acid, methacrylic acid, itaconic acid, hydroxymethyl methacryl Acrylate, hydroxypropyl methacrylate, acrylamide, methylol acrylamide, glycidyl methacrylate, ethyl acrylate, isobutyl acrylate, normal butyl acrylate, 2-ethylhexyl acrylate polymer or terpolymer It may be included alone or in combination of two or more.

The silicone-based resin may be a resin including a silicon-bonded hydrogen atom, a hydroxy group or a hydrolyzable group, and may be a silicone resin known in the art prepared by a known technique and conventional silicone resin. Such silicone resins can typically be prepared by cohydrolysing a suitable mixture of silane precursors in an organic solvent such as toluene, for example, the silicone resin is a silane of formula R ¹ R ² ₂ SiX and a formula R ² SiX ₃ Silane wherein R ¹ is C ₁ to C ₁₀ hydrocarbyl or C ₁ to C ₁₀ halogen-substituted hydrocarbyl, R ² is R ¹ , —H or a hydrolyzable group, and X may be a hydrolyzable group The hydrolyzable group may be prepared in minutes, for example, within 30 minutes at room temperature (−23 ± 2 ° C.) to 100 ° C., in the hydrolyzable group. Means that it can react with water in the presence or absence of a catalyst in it to form silanol (Si-OH) groups Examples of hydrolyzable groups represented by R ² are -Cl, -Br, -OR ₃ , -OCH ₂ CH ₂ OR ₃ , CH ₃ C (= O) O-, Et (Me) C = NO-, CH ₃ C (= O) N (CH ₃ )-And -ONH ₂ , wherein R ³ is C ₁ to C ₈ hydrocarbyl or C ₁ to C ₈ halogen-substituted hydrocarbyl.

However, in the case of the rubber-based adhesive resins listed above, it may not be suitable for the device wafer thin film / rear processing, which proceeds under high temperature conditions, and in the case of epoxy resin, the device wafer thin film is significantly reduced after curing. It is not suitable for the rear processing process and there is a problem that can reduce the bump filling property and adhesion between the device wafer and the temporary adhesive film. In addition, in the case of acrylic resin, the heat resistance is not good, preferably using a silicone-based resin expresses the desired adhesive force, and may be more preferable in heat resistance and chemical resistance.

In addition, the solvent can be used without limitation in the case of a solvent that is normally not a problem in dissolving the adhesive resin as described above, and as a non-limiting example, saturated aliphatic hydrocarbons such as n-pentane, hexane, n- Heptane, isooctane and dodecane), cycloaliphatic hydrocarbons such as cyclopentane and cyclohexane, aromatic hydrocarbons such as benzene, toluene, xylene and mesitylene, cyclic ethers such as tetrahydrofuran (THF) and di Oxane), ketones (e.g. methyl isobutyl ketone (MIBK), methylethylketone (MEK)), halogenated alkanes (e.g. trichloroethane) and halogenated aromatic hydrocarbons (e.g. bromobenzene and chlorobenzene) It is not limited to this. The organic solvent may be a single organic solvent or a mixture of two or more different organic solvents as defined above, respectively.

In addition, the specific kind of the crosslinking agent may vary depending on the specific kind of the above-described adhesive resin, and as a non-limiting example, MeSi (OCH ₃ ) ₃ , CH ₃ Si (OCH ₂ CH ₃ ) ₃ , CH ₃ Si (OCH ₂ CH ₂ CH ₃ ) ₃ , CH ₃ Si [O (CH ₂ ) ₃ CH ₃ ] ₃ , CH ₃ CH ₂ Si (OCH ₂ CH ₃ ) ₃ , C ₆ H ₅ Si (OCH ₃ ) ₃ , C ₆ H ₅ CH ₂ Si (OCH ₃ ) ₃ , C ₆ H ₅ Si (OCH ₂ CH ₃ ) ₃ , CH ₂ = CHSi (OCH ₃ ) ₃ , CH ₂ = CHCH ₂ Si (OCH ₃ ) ₃ , CF ₃ CH ₂ CH ₂ Si (OCH ₃ ) ₃ , CH ₃ Si (OCH ₂ CH ₂ OCH ₃ ) ₃ , CF ₃ CH ₂ CH ₂ Si (OCH ₂ CH ₂ OCH ₃ ) ₃ , CH ₂ = CHSi (OCH ₂ CH ₂ OCH ₃ ) ₃ , CH ₂ = CHCH ₂ Si (OCH ₂ CH ₂ OCH ₃ ) ₃ , C ₆ H ₅ Si (OCH ₂ CH ₂ OCH ₃ ) ₃ , Si (OCH ₃ ) ₄ , Si (OC ₂ H ₅ ) ₄ And alkoxy silanes such as Si (OC ₃ H ₇ ) ₄ ; Organoacetoxysilanes such as CH ₃ Si (OCOCH ₃ ) ₃ , CH ₃ CH ₂ Si (OCOCH ₃ ) _3, and CH ₂ = CHSi (OCOCH ₃ ) ₃ ;, CH ₃ Si [ON = C (CH ₃ ) CH Organominominooxysilanes such as ₂ CH ₃ ] ₃ , Si [ON = C (CH ₃ ) CH ₂ CH ₃ ] _4, and CH ₂ = CHSi [ON = C (CH ₃ ) CH ₂ CH ₃ ] ₃ ; Organoacetamidosilanes, such as ₃ Si [NHC (= O) CH ₃ ] ₃ and C ₆ H ₅ Si [NHC (= O) CH ₃ ] ₃ ; CH ₃ Si [NH (SC ₄ H ₉ ] ₃ And amino silanes such as CH ₃ Si (NHC ₆ H ₁₁ ) ₃ , and organoaminooxysilanes, wherein the crosslinker is a single silane or a mixture of two or more different silanes, each as described above. Can be.

In addition, in the case of the curing catalyst can be used without limitation the catalyst used in the conventional thermosetting, the specific kind thereof may be used to change differently depending on the type of adhesive resin used. As a non-limiting example, it may include a platinum group metal selected from platinum, rhodium, ruthenium, palladium, osmium or iridium metal or an organometallic compound thereof, or a combination thereof, and may be included alone or in combination of two or more thereof. .

The method of forming the first adhesive layer 11 through the adhesive composition as described above may be by a method of forming a film on a conventional support member. As a non-limiting example, comma coating, reverse It may be formed by any one of coating, gravure coating, braid coating, silk screen coating and slot die head coating. More specifically, the adhesive composition may be coated on one surface of the core layer to be described below by any one of the above methods, and prepared by drying for 3 to 6 minutes at 120 to 170 ° C and 200 to 230 ° C, respectively. However, it is not limited to this manufacturing method. The first adhesive layer 11 thus prepared may have a thickness of preferably 5 to 10 μm, and if the thickness is less than 5 μm, the adhesive force between the first adhesive layer 11 and the carrier wafer may be weak, resulting in thin / back processing of the device wafer. In the process, the carrier wafer is separated and the process cannot be performed or the reliability of the device wafer is degraded. When the thickness exceeds 10 μm, the adhesive force between the first adhesive layer 11 and the carrier wafer becomes too strong, When the carrier wafer is separated from the temporary adhesive film for reuse, the separation is not easy, and as the thickness of the first adhesive layer 11 increases, the overall thickness of the temporary adhesive film is increased, which is very undesirable in terms of thinning of the film.

Next, the core layer 12 facing the above-mentioned first adhesive layer 11 will be described.

The core layer 12 performs a lamination process more smoothly when laminating the temporary adhesive film to the carrier function and carrier wafer of the temporary adhesive film according to the present invention, the carrier wafer and the device wafer of the laminate bonded The second adhesive layer and the core layer are combined to remove the stress generated when grinding the back surface of the device wafer, and serves to easily remove the temporary adhesive film from the carrier wafer after the carrier wafer and the device wafer are separated. The core layer 12 may be used without limitation in the case of a film of a material having no change in physical properties and shape in various high temperature physical environments subjected to the thin film / back processing of the device wafer, or a chemical environment by etching by chemicals. have. Preferably, it is composed of polyetheretherketone (PEEK), polyethyleneimine (PEI), polyimide (PI) and polyethersulfone (PES) in consideration of all hygroscopicity, heat resistance and chemical resistance Any one or more films selected from the group may be used, and it is preferable to use a polyimide film in consideration of the purchase price while expressing properties over an appropriate level. The core layer may preferably be a film having surface roughness formed by this method in order to improve adhesive strength with the first adhesive layer and the second adhesive layer.

The core layer 12 may have a thickness of preferably 10 to 90 μm, and more preferably 20 to 90 μm in terms of preventing shape deformation of the film. If the thickness of the core layer 12 is less than 10 μm, wrinkles may occur or the shape may be changed due to conditions such as attaching the temporary adhesive film to the carrier wafer and the device wafer, and then during the thin film / backside processing process of the device wafer. There is a problem that can be wrong, the generation of such wrinkles or shapes may cause a separation or clearance of the device wafer and / or carrier wafer can not proceed the process or may have a problem of lowering the reliability of the manufactured device wafer. In addition, when the thickness of the core layer 12 exceeds 90㎛, the overall thickness of the temporary adhesive film may be increased to cause problems in thinning of the film and compatibility with conventional thin film / rear processing equipment. The thickness of the core layer 12 increased within the total thickness range may have a problem in that the thickness of the first adhesive layer and / or the second adhesive layer may be decreased to properly express the function of each layer.

Next, the second adhesive layer 13 formed to face the other surface on which the first adhesive layer 11 is not formed in the core layer 12 will be described.

The second adhesive layer 13 functions to bond the device wafer, and the device wafer does not cause separation or clearance during the thin film / backside processing process, and does not physically affect the device wafer after the process is completed. It can have an adhesive force that can be easily separated without. Accordingly, the second adhesive layer 13 and the core layer 12 can satisfy the following conditions (3) and (4).

First, the adhesive strength measured as the condition (3) is to attach the second adhesive layer surface of the specimen to the SUS 304 with a roller of 2kg in accordance with JIS Z 0237 for the specimen cut the temporary adhesive film to the length of 2.5cm × 10cm After storage for 1 hour at a temperature of 25 ℃ and 55% relative humidity conditions using a tensile tester to measure the 180 ° adhesive strength at a peel rate of 300 mm / min. In addition, as the condition (4), the measured adhesive strength was measured by cutting the temporary adhesive film to a size of 2.5 cm × 10 cm in width and length by using a roller of 2 kg on the surface of the second adhesive layer of the specimen according to JIS Z 0237. After adhesion for 1 hour at 25 ℃ and 55% relative humidity conditions, after the heat treatment for 60 minutes at 200 ℃ again measured the 180 ° adhesive strength at a peeling rate of 300mm / mim using a tensile tester .

Although the adhesive strength does not directly indicate the adhesive strength between the device wafer and the second adhesive layer 13, the second adhesive layer 13 that satisfies the adhesive strength may satisfy the desired level of adhesive strength between the device wafers. have. If the adhesive strength is not satisfied, the device wafer may be separated during the thin film / rear processing process or the gap may be generated between the device wafer and the second adhesive layer, or the vacuum may not be performed. As the voids repeat shrinkage expansion, the device wafer may break or the reliability may be degraded.

The second adhesive layer 13 may be formed on the core layer through an adhesive composition, and the adhesive composition may be formed through an adhesive composition including an adhesive resin and a solvent, and further include a crosslinking agent, a curing accelerator, and the like. Can be. Specific types and mixing ratios of the adhesive composition may be used without limitation when the adhesive strength may be expressed. However, preferably, the adhesive composition may include 60 to 200 parts by weight of a solvent with respect to 100 parts by weight of an adhesive resin, which may be advantageous for expression of adhesive strength. In addition, the crosslinking agent may be included in an amount of 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive resin, and in the case of a curing catalyst, 0.1 to 50 parts by weight based on 100 parts by weight of the adhesive resin. It can be included as a wealth.

The adhesive composition for forming the second adhesive layer as described above may be the same as the adhesive composition capable of forming the first adhesive layer, different compositions may be used to express the desired adhesive force, and the first adhesive layer and the first adhesive layer may be formed of an adhesive resin. 2 Even when the adhesive layer uses a silicone-based resin, it may be used by changing a specific kind in order to express the desired adhesive strength differently.

The method of forming the second adhesive layer 13 through the adhesive composition as described above may be performed by a method of forming a film on a conventional support member. As a non-limiting example, comma coating and reverse It may be formed by any one of coating, gravure coating, braid coating, silk screen coating and slot die head coating. More specifically, the adhesive composition is coated on one surface of the core layer 12 by any one of the above methods, and may be prepared by drying for 3 to 6 minutes at 120 to 170 ° C and 200 to 230 ° C, respectively. However, it is not limited to this manufacturing method. The thickness of the prepared second adhesive layer 13 may be preferably 48 to 70 μm, and the critical meaning of the thickness of the second adhesive layer 13 will be omitted as described above.

The order of forming the second adhesive layer 13 and the first adhesive layer 11 on the core layer 12 is not limited, and any one may be formed first or simultaneously.

On the other hand, the present invention is a temporary adhesive film for thermosetting semiconductor wafer according to the present invention; A carrier wafer formed facing the first adhesive layer of the temporary adhesive film; And a device wafer formed on the second adhesive layer of the temporary adhesive film. The laminate includes a temporary adhesive film.

Specifically, Figure 2 is a cross-sectional view of a laminate according to an embodiment of the present invention, the carrier wafer 20 is attached to face the first adhesive layer 11 included in the temporary adhesive film 10, the temporary adhesive The device wafer 30 may be attached to face the second adhesive layer 13 included in the film 10. The thickness of the laminate may be 1.3 to 1.8 mm, and if the thickness of the laminate is outside the above range, compatibility with equipment used in the thin film / backside processing process of the device wafer may be a problem.

First, the carrier wafer 20 may be a conventional material having strength necessary to prevent breakage or deformation of the wafer in a process such as thin film / backside processing and transport of the device wafer, preferably glass or silicon-based. It may include any one or more materials selected from the group consisting of acrylic, preferably by using a silicon-based chemical resistance during the stress relief process (step of flattening the polishing surface with fluoric acid, etc.) after the thinning process of the wafer There is an advantage to this. However, using the same material as the material used for the device wafer can prevent the warpage of the wafer, which may occur during thin film / rear processing under high temperature conditions due to the same coefficient of linear expansion of the carrier wafer and the device wafer. Such carrier wafers may preferably be 600-800 μm thick.

A certain level of adhesive strength is required between the carrier wafer 20 and the first adhesive layer 11 of the temporary adhesive film 10. If the adhesive strength is not retained, the carrier wafer is used in the thin film / rear processing of the device wafer. The separation of the device wafer may not be supported, cracking of the device wafer may occur, and problems may occur that may make it difficult to transfer during the process. In addition, since the carrier wafer 20 and the temporary adhesive film 10 in the bonded state after the device wafer separation are not discarded, but the carrier wafer must be recycled again, the higher the adhesive strength is not good, the carrier wafer and the temporary adhesive film are not good. The adhesive strength is preferably below a certain value to facilitate separation.

Accordingly, the adhesive force between the first adhesive layer 11 and the carrier wafer 20 may satisfy the following conditions (5) and (6).

First, the adhesive strength of the condition (5) is a silicon wafer that has not been subjected to any surface treatment of the surface of the first adhesive layer of the test piece according to JIS Z 0237 LG Siltron) was attached with a roller of 2kg and stored at 25 ° C. and 55% relative humidity for 1 hour, and then measured 180 ° adhesive strength at a peel rate of 300 mm / min using a tensile tester. In addition, the adhesive strength of the condition (6) is that the specimen cut the temporary adhesive film in the size of 2.5cm × 10cm in width and length to the silicon wafer without any surface treatment of the first adhesive layer surface of the specimen according to JIS Z 0237 Attached with a 2kg roller, stored for 1 hour at 25 ° C and 55% relative humidity, and then heat treated at 200 ° C for 60 minutes, followed by a 180 ° adhesive strength at a peel rate of 300mm / mim using a tensile tester. The measurement result.

If the adhesive strength of the conditions (5) and (6) is satisfied, the carrier wafer may not be separated from the device wafer, and after separating the device wafer, the carrier wafer may be more easily separated and reused from the temporary adhesive film. More preferred laminates can be implemented.

Next, the device wafer 30 will be described.

The device wafer 30 may be a conventional device wafer including bumps, and may include silicon-based wafers containing silicon, potassium-arsenic wafers, gallium-in wafers, germanium wafers, gallium-arsenic-aluminum wafers, and the like. It may be, preferably a silicon-based wafer. The thickness of the device wafer may be 600 to 800 μm before the thin film process, and may be 700 to 900 μm in thickness including bumps.

The surface of the device wafer 30 facing the second adhesive layer 13 of the temporary adhesive film 10 may be a circuit forming surface having bumps or the like. The second adhesive layer 13 and the device wafer 30 are separated from the device wafer 30 during the thin film / rear processing process and do not generate a gap, and do not physically affect the device wafer after the process is completed. An adhesive strength that can be easily separated can be retained. Accordingly, the adhesive strength between the second adhesive layer 13 and the device wafer 30 can satisfy the following conditions (7) and (8).

First, the adhesive strength of the condition (7) is a silicon release agent (KS-3755, Shin-Etsu) of the second adhesive layer surface of the specimen in accordance with JIS Z 0237 for the specimen cut the temporary adhesive film in the size of 2.5cm × 10cm Chemical Co., Ltd.) was attached to a spin-coated silicon wafer with a thickness of 1 μm with a roller of 2 kg and stored for 1 hour at a temperature of 25 ° C. and a relative humidity of 55%, followed by 300 mm / min using a tensile tester. It is the result of measuring 180 degree adhesive strength by the peeling rate of. In addition, the adhesive strength under the condition (8) is that the second adhesive layer surface of the specimen was cut into a size of 2.5 cm × 10 cm in the temporary adhesive film in accordance with JIS Z 0237, and the silicone release agent (KS-3755, Shin-Etsu Chemical) Co., Ltd.) was attached to a spin-coated silicon wafer (LG Siltron) with a thickness of 1 μm with a roller of 2 kg, stored for 1 hour at a temperature of 25 ° C. and a relative humidity of 55%, and then again to 200 ° C. for 60 minutes. After completion of the inter-heat treatment, a 180 ° adhesive strength was measured at a peel rate of 300 mm / mim using a tensile tester.

If the adhesive strength is not satisfied, the device wafer may be separated during the thin film / rear processing process or the gap may be generated between the device wafer and the second adhesive layer, or the vacuum may not be performed. As the voids repeat shrinkage expansion, the device wafer may break or the reliability may be degraded.

Meanwhile, according to an exemplary embodiment of the present invention, the device wafer 30 may further be attached to the second adhesive layer 13 by further including a protective layer. Specifically, Figure 3 is a cross-sectional view of a laminate according to an embodiment of the present invention, the protective layer 40 is formed on the device wafer 30, preferably on the circuit formation surface including bumps, circuit patterns, etc. The protective layer 40 may be attached to face the second adhesive layer 13 of the temporary bonding film.

The protective layer 40 protects the pattern formed on the circuit forming surface of the device wafer 30 and easily separates the carrier wafer 20 and the temporary adhesive film 10 after the thin film / backside processing process of the device wafer. And may be formed on the device wafer by any one of spin coating, comma coating, reverse coating, gravure coating, braid coating, silk screen coating and slot die head coating. The protective layer may be removed from the device wafer through separation of the carrier wafer and the temporary adhesive film after the thin film / backside processing of the device wafer and cleaning.

The protective layer 40 may include a curable silicone resin, a curable fluorine resin, an alcohol, a wax, and the like, and a curing reaction such as a solvent addition resin, a solvent condensation resin, a solvent-free addition resin, a solvent-free condensation resin, or the like. Type resin can be used individually or in combination of 2 or more types. It is preferable to use a curable silicone resin capable of minimizing the influence on compatibility and bumps with the device wafer.

The protective layer 40 may further include a curing agent in addition to the curable silicone resin. The content of the curing agent is preferably 0.5 to 5.0% by weight of the total protective layer 40 composition, more preferably 1.0 to 3.0% by weight may be included. When the content of the curing agent is less than 0.5% by weight, a problem may occur that the silicon transfer occurs on the pattern of the device wafer 30 circuit forming surface by uncuring, and when the content of the curing agent exceeds 5.0% by weight, Since the control of the curing rate is difficult, the pot life of the protective layer 40 composition liquid may be shortened. A solvent may be included in the protective layer 40, and the solvent may be an aqueous or organic solvent, but is not particularly limited.

The laminate according to the present invention as described above (1) adheres the carrier wafer to face on the first adhesive layer included in the temporary adhesive film according to the present invention, the device wafer on the second adhesive layer included in the temporary adhesive film Adhering to face each other to form a laminate; (2) cutting the temporary adhesive film and the device wafer interface at one end of the laminate; And (3) removing the carrier wafer and the temporary adhesive film from the laminate by separating the carrier wafer and the temporary adhesive film at a predetermined angle from one end of the cut laminate to separate the device wafer from the laminate. do.

First, step (1) will be described.

Step (1) is a step of manufacturing a laminate, and attaching the device wafer 30 and the carrier wafer 20 to the temporary adhesive film 10 according to the present invention.

The order in which the carrier wafer 20 and the device wafer 30 are adhered to the temporary adhesive film 10 is not limited, and may be simultaneously bonded or any one layer may be adhered first and the other layer may be adhered.

Preferably, after bonding the carrier wafer 20 to the first adhesive layer 11 of the temporary adhesive film 10, the device wafer 30 may be bonded to the second adhesive layer 13 of the temporary adhesive film 10. In addition, the process for adhering after the bonding is preferably performed under vacuum pressure to prevent defects of the device wafer due to bubbles in advance. In addition, in order to minimize the generation of voids between the bumps and the temporary adhesive film 10 formed on the device wafer 1 to 10 minutes, more preferably 2 to 5 minutes at 50 ~ 200 ℃, preferably 100 ~ 150 ℃ It may be carried out by applying heat and / or a pressure of 50 to 5000 kgf, wherein the degree of vacuum may be performed at 10 torr to 10 ⁻³ torr, preferably 1 torr to 10 ⁻² torr.

According to a preferred embodiment of the present invention, the device wafer 30 may be a device wafer having a protective layer (40 in FIG. 3) formed on the circuit formation surface, in this case, the second adhesive layer (10) of the temporary adhesive film 10 The protective layer 40 is bonded to 13 to perform the above-described lamination process.

Next, after the step (1), the device wafer 30 included in the laminate comprises: (a) thin-filming another surface of the device wafer that does not face the temporary adhesive film; And (b) performing back processing on the thin film-treated surface.

The thin film treatment of step (a) may be a conventional grinding process, it is possible to use a known grinding method and apparatus. The grinding is preferably performed while cooling by supplying water to the wafer and the grindstone (diamond, etc.).

Step (b) may be performed on the back surface of the thin film processed device wafer, and may include various processes used at the wafer level. Specifically, electrode formation, metal wiring formation, protective film formation, and the like may be performed. More specifically, metal sputtering for forming electrodes, wet etching for etching the metal sputtering layer, and resist for forming a metal wiring mask Pattern formation by coating, exposure, and development, stripping of resist, dry etching, metal plating, silicon etching for TSV formation, oxide film formation on a silicon surface, and the like. As a specific method for this, a conventionally known method can be used.

And (2) cutting the temporary adhesive film and the device wafer interface at one end of the laminate as a step (2).

Specifically, Figure 4 is a schematic diagram showing a separation process according to a preferred embodiment of the present invention, it can be seen that the cut between the temporary adhesive film 10 and the device wafer interface 30 at one end of the laminate. The cutting method may be a conventional method, and any method may be used without limitation as long as it does not affect the device wafer.

Next, in step (3), the carrier wafer 20 and the temporary adhesive film 10 are separated from one end of the cut laminate at an angle to remove the carrier wafer and the temporary adhesive film from the laminate. do.

The specific method of making the predetermined angle and spaced apart may be carried out without limitation in a limit that does not affect the device wafer, and may be spaced apart by a conventional method such as a jig, peel off through tape attachment.

Specifically, FIGS. 4 and 5 are schematic diagrams illustrating a separation process according to an exemplary embodiment of the present invention. The device wafer includes the carrier wafer 20 and the temporary adhesive film 10 included at either end of the laminate as shown in FIG. 4. It can be removed as shown in Figure 5 by continuously lifting in the P direction in the P direction with respect to (30).

6 is a schematic diagram showing a separation process according to an exemplary embodiment of the present invention. If the protective layer 40 is included on the circuit forming surface of the device wafer 30, the carrier wafer 20 and the temporary bonding are performed. The film 10 may be continuously lifted and removed at a predetermined angle in the Q direction with respect to the protective film 40 and the device wafer 30.

Although the present invention will be described in more detail with reference to the following examples, the following examples are not intended to limit the scope of the present invention, which will be construed as to aid the understanding of the present invention.

The surface of the polyimide film (LN Grade, SKC Kolon PI Corporation) having a thickness of 25 μm, which was treated with a corona on both surfaces after filtering the adhesive composition for device wafers using a capsule filter having a pore diameter of 0.6 μm. Coated with a comma coater, dried at 150 ° C. and 220 ° C. for 5 minutes, respectively, and then treated with a fluorine-releasing polyethylene terephthalate (PET) protective film having a thickness of 38 μm (SRF-T38-1L, Zerontec Co., Ltd). .) Was laminated to obtain a primary temporary adhesive film coated with a device adhesive (second adhesive layer) having a thickness of 50 µm from which toluene and unreacted silicone monomers were removed.

Thereafter, the adhesive composition for carrier wafer was filtered using a capsule filter having a pore diameter of 0.6 μm, coated on the other side of the polyimide film using a comma coater, and dried at 120 ° C. and 150 ° C. for 5 minutes, respectively. A carrier adhesive in which toluene and unreacted silicone monomers were removed by laminating a fluorine-releasing polyethylene terephthalate (PET) protective film (SRF-T38-1L, Zerontec Co., Ltd.) having a thickness of 38 μm. First Adhesive Layer) A second temporary adhesive film coated with a thickness of 7.5 μm was obtained. The second temporary adhesive film was then aged in an oven fixed at 60 ° C. for 12 hours to prepare a temporary adhesive film as shown in Table 1 having a thickness of 84.5 μm.

(1) Adhesive Composition for Device Wafers

100 parts by weight of toluene was added to the solvent based on 100 parts by weight of the thermosetting silicone adhesive (DC-7657, Dow Corning), followed by mixing using a stirrer. 1.204 parts by weight of a crosslinking agent (SO-7678, Dow Corning) was added to 100 parts by weight of the silicone adhesive to the mixture, followed by stirring at room temperature for 2 hours. Thereafter, 0.82 parts by weight of a platinum catalyst (NC-25, Dow Corning) was added to 100 parts by weight of the silicone adhesive as a curing catalyst, and re-stirred at room temperature for 2 hours to prepare an adhesive composition for a device wafer.

(2) Adhesive Composition for Carrier Wafer

100 parts by weight of toluene was added to the solvent based on 100 parts by weight of the thermosetting silicone adhesive (DC-7660, Dow Corning), followed by mixing using a stirrer. 1.204 parts by weight of a crosslinking agent (SO-7028, Dow Corning) was added to the mixture based on 100 parts by weight of a silicone adhesive, followed by stirring at room temperature for 2 hours. Thereafter, 0.82 parts by weight of a platinum catalyst (NC-25, Dow Corning) was added to 100 parts by weight of the silicone adhesive as a curing catalyst, and re-stirred at room temperature for 2 hours to prepare an adhesive composition for a carrier wafer.

It was prepared in the same manner as in Example 1, but changed the thickness of the first adhesive layer, the core layer, the second adhesive layer as shown in Table 1 to prepare a temporary adhesive film.

Comparative Example 5

After mixing 71% by weight of vinyl functional silicone resin and 29% by weight of Si-H functional polydimethylsiloxane, the mixture was treated with 150 parts by weight of mesitylene to 100 parts by weight of the mixture, and stirred at room temperature for 2 hours. Thereafter, 20 ppm of platinum acetylacetonate was added to the mixed solution, followed by stirring at room temperature for 2 hours to prepare a temporary adhesive composition.

Experimental Example 1

The physical properties of the temporary adhesive films prepared through the Examples and Comparative Examples 1 to 4 are shown in Tables 1 and 2 below.

1. Evaluation of Satisfaction Condition (1) ~ (5)

The first adhesive layer, the core layer, and the second adhesive layer of the prepared temporary adhesive film were evaluated to satisfy the following conditions. When satisfied, (circle) and when not satisfied, it was shown by x.

(1) [Relationship 1]

(2) [Relationship 2]

(3) [Relationship 3]

(4) the thickness of the second adhesive layer 48 ~ 70㎛

(5) [Relationship 4]

2. Measurement of adhesive strength between layers

* Measurement of adhesive strength between the first adhesive layer and the core layer

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were affixed to the first adhesive layer surface of the specimens with SUS 304 with 2 kg of rollers in accordance with JIS Z 0237 and subjected to a temperature of 25 ° C and a relative humidity of 55%. After storage for 1 hour at 180 ° bond strength was measured at a peel rate of 300 mm / min using a tensile tester.

In addition, the test piece was cut in a size of 2.5 cm x 10 cm in the temporary adhesive film in accordance with JIS Z 0237 to attach the first adhesive layer surface of the test piece to the SUS 304 with a roller of 2 kg, the temperature of 25 ℃ and 55% relative After storage for 1 hour in a humidity condition and after the heat treatment for 60 minutes at 200 ℃ again using a tensile tester 180 ° adhesive strength was measured at a peel rate of 300mm / mim.

* Adhesion strength measurement between the second adhesive layer and the core layer

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were attached to the surface of the second adhesive layer on the SUS 304 with 2 kg of rollers in accordance with JIS Z 0237, and the temperature was 25 ° C and 55% relative humidity. After storage for 1 hour at 180 ° bond strength was measured at a peel rate of 300 mm / min using a tensile tester.

In addition, the specimen cut into a cross-section, 2.5cm × 10cm size of the temporary adhesive film in accordance with JIS Z 0237 to attach the second adhesive layer surface of the specimen to the SUS 304 with a roller of 2kg and a temperature of 25 ℃ and 55% relative After storage for 1 hour in a humidity condition and after the heat treatment for 60 minutes at 200 ℃ again using a tensile tester 180 ° adhesive strength was measured at a peel rate of 300mm / mim.

Experimental Example 2

The physical properties of the temporary adhesive films prepared in Examples and Comparative Examples were measured and shown in Table 1.

1. Measurement of adhesive strength between carrier wafer and temporary adhesive film

Cut the temporary adhesive film into 2.5cm × 10cm lengths, and attach the specimen to the first adhesive layer on the silicon wafer without any surface treatment in accordance with JIS Z 0237. And 180 ° adhesive strength was measured at a peel rate of 300 mm / min using a tensile tester after storage for 1 hour at 55% relative humidity.

In addition, the specimen cut in the size of 2.5cm × 10cm of the temporary adhesive film was attached to the first adhesive layer surface of the specimen on a silicon wafer without any surface treatment according to JIS Z 0237 with a roller of 2kg and 25 ° C. After storage for 1 hour at a temperature of 55% and a relative humidity of 55%, the heat treatment was completed for 60 minutes at 200 ° C., and then 180 ° adhesive strength was measured at a peel rate of 300 mm / mim using a tensile tester.

2. Measurement of adhesion strength between device wafer and temporary adhesive film

According to JIS Z 0237, the second adhesive layer surface of the specimen cut out of the temporary adhesive film in a size of 2.5 cm x 10 cm was 1 μm of silicon release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.). Attached to a thick spin-coated silicon wafer (LG Siltron) with a 2 kg roller, stored for 1 hour at 25 ° C and 55% relative humidity, and then 180 ° at a peel rate of 300 mm / min using a tensile tester. Adhesive strength was measured.

In addition, in the method of Measurement 2, the second adhesive layer surface of the specimen was cut into a silicone release agent (KS-3755, Shin-Etsu Chemical Co. Ltd.) according to JIS Z 0237. , Ltd.) was attached to a spin coated silicon wafer (LG Siltron) with a thickness of 1 μm with a roller of 2 kg, stored for 1 hour at 25 ° C. and 55% relative humidity, and then heat-treated at 200 ° C. for 60 minutes. After completion, the 180 ° adhesive strength was measured at a peel rate of 300 mm / mim using a tensile tester.

Experimental Example 3

Bonding a 12-inch carrier wafer (LG Siltron) to face the first adhesive layer of the temporary adhesive film prepared in Examples and Comparative Examples 1 to 4, the average height 15um (15 to face the second adhesive layer of the temporary adhesive film Device wafers (diameter: 300 mm, thickness: 725 um, chip shape: 10 mm × 10 mm) with 1369 (37 × 37 = 1369) chips installed per chip in a grid arrangement of 100um pitch Square, chip patterns are formed over the entire surface of the wafer), and then a laminate is prepared by applying heat and pressure at 150 ° C. and 500 kgf for 5 minutes under 0.5 torr vacuum. The physical properties of the laminates were measured and shown in Tables 1 and 2 below.

In this case, the device wafer is a device wafer having a protective layer spin-coated to a thickness of 1um after diluting a silicon release agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) in toluene on the circuit forming surface It was.

On the other hand, in the case of the temporary adhesive composition prepared in Comparative Example 5, the bump (ball phase) electrode of an average height of 15um (15 ± 2um) is 1369 per chip (37 × 37 = 1369 in a grid arrangement of 100um pitch After the spin coating of the temporary bonding composition of Comparative Example 5 on the installed device wafer (diameter: 300 mm, thickness: 725 um, chip shape: 10 mm × 10 mm square, the entire wafer surface) Soft baking removes residual mesitylene solvent. At this time, the time required for the spin coating took about 60 seconds when coating one sheet. Soft baking conditions were performed for 5 minutes in a hot plate fixed at 150 ℃. Subsequently, the carrier wafer (LG Siltron) was bonded to the solvent-free temporary bonding composition at 120 ° C. for 2 minutes in a vacuum chamber to prepare a bonded laminate. The laminate thus prepared was cured for 10 minutes at 200 ° C. for hard baking of the temporary bonding composition of Comparative Example 5 to prepare a laminate in which the temporary bonding composition was cured. Except the items, the remaining physical properties were measured and shown in Tables 1 and 2.

1. Evaluation of adhesion

Adhesion of the interface between the device wafer and the temporary adhesive film was observed by visual and optical microscopy. When no voids occurred, ○ (excellent) was observed and △ (good) when 1 to 3 voids were evaluated. The case where abnormality generate | occur | produced was evaluated as (triangle | delta) and x (defect).

2. Grinding resistance

By grinding the device wafer back side of the laminate by using a back side grinder (DFG850, manufactured by Disco) on the back side of the device wafer of the laminate, the device wafer thickness of the laminate was finished to 50 um, and then visually and visually Inspection was carried out. The case where abnormality did not occur was evaluated as (circle) (excellent), the case where abnormality, such as a device wafer cracking or a temporary adhesive film peeling, was evaluated as (triangle | delta) and (defect).

3. Temporary adhesive film core layer shape deformation resistance

Observe the shape of the core layer contained in the laminate with the naked eye and an optical microscope to see if there is no abnormality such as wrinkles or deformation of the core layer. Was evaluated.

4. Heat resistance

The laminate was placed in a 250 ° C. oven under a nitrogen atmosphere for 1 hour, cooled, and visually inspected by visual and optical microscope. The case where abnormality did not occur was evaluated as (circle) (excellent), and the case where abnormality occurred was evaluated by (triangle | delta) and x (defective).

5. Chemical resistance

The laminate was impregnated into a barrel containing 70% by weight aqueous sulfuric acid solution, 70% by weight aqueous sodium hydroxide solution and TMF for 2 hours, and then visually inspected by visual and optical microscope. The case where abnormality did not occur was evaluated as (circle) (excellent), and the case where abnormality occurred was evaluated by (triangle | delta) and x (defective).

6. Peelability

At one end of the laminate, the temporary adhesive film and the device wafer interface were cut with a knife, and the carrier wafer and the temporary adhesive film were lifted with tweezers. Then, visual inspection was performed by visual and optical microscopy, and when the device wafer was not broken or cracked, no abnormality was evaluated as ○ (excellent), and the abnormality was evaluated as △ (normal) and × (bad). .

7. Carrier Wafer Reusability

The laminate end end interface of the temporary adhesive film and the device wafer was cut with a knife and the carrier wafer was lifted up. Thereafter, visual inspection was carried out to visually evaluate the case where no abnormality occurred such as cracking or cracking of the carrier wafer, and the case of abnormality was evaluated as △ (normal) and × (defect).

8. Equipment Compatibility

The equipment compatibility with DFG850 manufactured by Disco Co., Ltd., which is used for rear-side processing of device wafers, was evaluated as ○ (excellent) when there was no problem in equipment compatibility, and △ (normal) and × (bad) when problems occurred. .

9. Evaluation of the yield of the laminate per hour (UPH)

In the preparation of the carrier and the device wafer for producing the laminate, the time taken to complete the manufacture of the bonded body was measured with a stopwatch. At this time, the laminating equipment was tested with TSV Temporary Wafer Bonding System (Kostek System Incorporation). In addition, a laminate fabrication test was conducted for 1 hour to test how many laminates could be produced per hour.

Table 1

		Example 1	Example 2	Example 3	Example 4	Example 5	Example 6	Example 7	Example 8	Example 9	Example 10
a		7.5	5	5	5	9.5	5	7.5	7.5	7.5	7.5
b		25	25	12.5	15	25	25	50	60	60	87.5
c		50	50	50	50	50	65	50	50	70	50
Total thickness		82.5	80	67.5	70	84.5	95	107.5	117.5	137.5	145
Condition 1		○	○	○	○	○	○	○	○	○	○
Condition 1		29.95	29.37	24.78	25.7	30.42	32.84	39.03	42.66	46.34	52.65
Condition 2		○	○	○	○	○	○	○	○	○	○
Condition 2		38.31	43.86	36.55	38.01	35.41	52.63	51.08	56.19	66.41	70.24
Condition 3		○	○	○	○	○	○	○	○	○	○
Condition 3		1.21	1.78	1.64	1.67	0.96	1.94	1.38	1.44	1.56	1.6
Condition 4		○	○	○	○	○	○	○	○	○	○
Condition 4		50	50	50	50	50	65	50	50	70	50
Condition 5		○	○	×	○	○	×	×	×	×	×
Condition 5		32.5	30	42.5	40	34.5	45	7.5	-2.5	17.5	-30
Adhesive strength (gf / 25mm)	A1	76	62	54	60	143	65	84	91	95	116
	A2	143	114	110	133	300	147	193	207	216	258
	B1	4.3	4.2	3.6	3.9	4.3	8.5	3.9	4.0	8.8	6.9
	B2	15.1	15.8	14.9	15.4	16.2	27.3	14.7	16.0	28.2	21.3
Adhesiveness		○	○	○	○	○	○	○	○	○	○
Adhesive strength (gf / 25mm)	C1	67	61	56	62	158	58	91	99	101	129
	C2	131	129	113	131	305	141	206	227	226	277
	D1	3.4	3.7	3.7	3.6	4.1	8.1	3.6	4.1	8.7	6.5
	D2	13.5	14.6	13.8	14.4	17.9	27.1	13.1	15.5	29.1	20.8
Grinding Resistance		○	○	○	○	○	○	○	○	○	○
Deformation within shape		○	○	×	△	○	○	○	○	○	○
Heat resistance		○	○	○	○	○	○	○	○	○	○
Chemical resistance		○	○	○	○	○	○	○	○	○	○
Peelability		○	○	○	○	○	△	○	○	×	○
Carrier Wafer Reusability		○	○	○	○	△	○	○	○	○	○
Equipment compatibility		○	○	○	○	○	○	○	○	△	△
UPH		21	21	21	21	21	21	21	21	20	20

TABLE 2

		Example 11	Example 12	Example 13	Example 14	Example 15	Comparative Example 1	Comparative Example 2	Comparative Example 3	Comparative Example 4	Comparative Example 5
a		7.5	4	7.5	7.5	12	7.5	10	5	5	-
b		10	25	25	25	25	100	90	90	10	-
c		50	50	45	75	50	50	70	70	45	-
Total thickness		67.5	79	77.5	107.5	87	157.5	170	165	60	60
Condition 1		○	○	○	○	○	×	×	×	×	-
Condition 1		24.51	29.14	28.79	35.66	31	57.19	56.84	56.06	22.56	-
Condition 2		×	○	○	○	○	×	○	×	×	-
Condition 2		30.65	47.24	35.76	51.08	32.75	76.63	74.26	93.56	24.59	-
Condition 3		○	×	○	○	×	○	○	×	○	-
Condition 3		1.09	2.22	1.17	1.38	0.77	1.67	1.3	2.56	1.54	-
Condition 4		○	○	×	×	○	○	○	○	×	-
Condition 4		50	50	45	75	50	50	70	70	45	-
Condition 5		×	○	×	×	×	×	×	×	○	-
Condition 5		47.5	29	27.5	57.5	37	-42.5	-10	-15	40	-
Adhesive strength (gf / 25mm)	A1	71	40	76	75	153	121	148	83	43	-
	A2	138	87	143	142	310	304	336	161	99	-
	B1	4.1	4.1	4.1	8.2	4.3	8.3	8.4	7.9	3.9	-
	B2	14.9	15.4	16.6	26.5	16.2	26.7	27.9	26.5	12.8	-
Adhesiveness		○	○	△	○	○	×	×	×	△	○
Adhesive strength (gf / 25mm)	C1	69	38	66	68	168	111	138	76	41	-
	C2	134	79	138	137	325	293	317	153	94	-
	D1	3.9	4.0	3.7	9.3	4.1	8.1	8.6	8.5	3.5	-
	D2	13.4	14.6	14.2	30.3	17.9	26.5	28.4	28.6	10.2	-
Grinding Resistance		○	△	△	○	○	×	×	×	△	○
Deformation within shape		×	○	○	○	○	○	○	○	×	○
Heat resistance		○	○	○	○	○	○	○	○	△	○
Chemical resistance		○	○	○	○	○	○	○	○	○	○
Peelability		○	○	○	×	○	×	×	×	○	○
Carrier Wafer Reusability		○	○	○	○	×	△	×	○	○	△
Equipment compatibility		○	○	○	○	○	×	×	×	○	○
UPH		21	21	21	19	21	19	19	19	21	9

In Tables 1 and 2, a, b, and c mean a first adhesive layer, a core layer, and a second adhesive layer, respectively.

In addition, A1 and A2 are the adhesive strength between the first adhesive layer of the temporary adhesive film and SUS 304, where A1 is the result measured without heat treatment, and A2 is the measured strength after heat treatment at 200 ° C.

In addition, B1 and B2 is the adhesive strength between the second adhesive layer of the temporary adhesive film and SUS 304, wherein B1 is the result measured without heat treatment, B2 is the measured strength after heat treatment at 200 ℃.

In addition, C1 and C2 is the adhesive strength between the temporary adhesive film and the carrier wafer, where C1 is the result measured without heat treatment, C2 is the measured strength after heat treatment at 200 ℃.

In addition, D1 and D2 are the adhesive strength between the temporary adhesive film and the device wafer, where D1 is the result measured without heat treatment, and D2 is the measured strength after heat treatment at 200 ° C.

Specifically, in Tables 1 and 2, Comparative Examples 1 to 5, which do not satisfy the condition 1 according to the present invention, can be found to be remarkably poor in adhesiveness compared to the examples, and also significantly in the grinding resistance compared to the examples. You can see that it is not good. Furthermore, in the case of Comparative Examples 1 to 4 it can be confirmed that the equipment compatibility is also very poor.

In addition, in Example 11, which does not satisfy the condition 2 according to the present invention, there was a problem that an abnormality in which the shape of the core layer of the temporary adhesive film was deformed occurred, and in Example 12, which did not satisfy the condition 3 according to the present invention. When the grinding resistance is not good compared to Example 1, it can be seen that the reusability of the carrier wafer is significantly poor compared to Example 1 in the case of Example 15.

In addition, in the case of Example 13, which does not satisfy the condition 4 according to the present invention, the grinding resistance was not good, and in Example 14, it was confirmed that the peelability of the device wafer was poor.

In addition, in Example 3, which does not satisfy the condition 5 according to the present invention, a deformation occurs in the shape of the core layer of the temporary adhesive film, and in the case of Example 6, there is a problem in that the peelability of the device wafer is lowered. For Examples 7, 8 and 10, no significant problems were found in the experiment, but may be undesirable in terms of thinning of the film as the total thickness of the temporary adhesive film exceeds 100 μm. In addition, in the case of Example 9 there is a problem that the peelability with the device wafer is poor, if the condition 5 according to the present invention is not satisfied, it can be seen that a film that does not satisfy any of all physical properties can be produced.

On the other hand, in the case of manufacturing a laminate by spin coating a non-film temporary adhesive composition (Comparative Example 5) onto a device wafer, similar physical properties were observed in the documents such as adhesion and grinding resistance as compared to the film type examples. Carrier wafer reusability was not good, and compared with the production rate of the laminate per hour, the Example manufactures 19 to 21 laminates per hour, but Comparative Example 5 produced only 9 laminates per hour, It can be seen that the film form is excellent in all physical properties and at the same time remarkably excellent in hourly production.

Claims

Core layer;

A first adhesive layer for bonding the carrier wafer formed on one surface of the core layer; And

And a second adhesive layer for adhering the device wafer formed on the other surface of the core layer, wherein the temporary adhesive film for semiconductor wafer satisfies the following relational formula (1).

[Relationship 1]
The method of claim 1,

The total thickness of the temporary adhesive film is a temporary adhesive film for thermosetting semiconductor wafer, characterized in that 65 ~ 150㎛.
The method of claim 1,

The temporary adhesive film is a temporary adhesive film for thermosetting semiconductor wafer, characterized in that the following relation 2.

[Relationship 2]
The method of claim 3,

The temporary adhesive film is a temporary adhesive film for thermosetting semiconductor wafer, characterized in that the following relation 3.

[Relationship 3]
The method of claim 4, wherein

The thickness of the second adhesive layer included in the temporary adhesive film is a temporary adhesive film for thermosetting semiconductor wafer, characterized in that 48 ~ 70㎛.
The method of claim 1,

The thickness of the first adhesive layer is 5 ~ 10㎛, the thickness of the core layer is a temporary adhesive film for thermosetting semiconductor wafer, characterized in that 10 ~ 90㎛.
The method of claim 6,

The thickness of the core layer is a temporary adhesive film for thermosetting semiconductor wafer, characterized in that 20 ~ 90㎛.
The method of claim 5,

The temporary adhesive film is a temporary adhesive film for thermosetting semiconductor wafer, characterized in that the following relation 4.

[Relationship 4]
The method of claim 1,

The first adhesive layer and the core layer satisfy the following conditions (1), (2), the temporary adhesive film for a thermosetting semiconductor wafer.

(1) The adhesive strength measured by the following measuring method 1 is 50 ~ 200 gf / 25mm

(2) The adhesive strength measured by the following measuring method 2 is 100 ~ 300 gf / 25mm

* Adhesive strength measurement method 1

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were affixed to the first adhesive layer surface of the specimens with SUS 304 with 2 kg of rollers in accordance with JIS Z 0237 and subjected to a temperature of 25 ° C and a relative humidity of 55%. After storage for 1 hour at 180 ° bond strength is measured at a peel rate of 300 mm / min using a tensile tester.

* Adhesive strength measurement method 2

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were affixed to the first adhesive layer surface of the specimens with SUS 304 with 2 kg of rollers in accordance with JIS Z 0237 and subjected to a temperature of 25 ° C and a relative humidity of 55%. After 1 hour storage at 200 ℃ again after the heat treatment for 60 minutes at 200 ℃ using a tensile tester to measure the 180 ° adhesive strength at a peel rate of 300mm / mim.
The method of claim 1,

The second adhesive layer and the core layer satisfy the following conditions (3), (4), the temporary adhesive film for a thermosetting semiconductor wafer.

(3) The adhesive strength measured by the following measuring method 3 is 2 ~ 10 gf / 25mm

(4) The adhesive strength measured by the following measuring method 4 is 5 ~ 25 gf / 25mm

* Adhesive Strength Measurement Method 3

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were attached to the surface of the second adhesive layer on the SUS 304 with 2 kg of rollers in accordance with JIS Z 0237, and the temperature was 25 ° C and 55% relative humidity. After storage for 1 hour at 180 ° bond strength is measured at a peel rate of 300 mm / min using a tensile tester.

* Adhesive Strength Measurement Method 4

Specimens cut into temporary and horizontally 2.5cm × 10cm sized specimens were attached to the surface of the second adhesive layer on the SUS 304 with 2 kg of rollers in accordance with JIS Z 0237, and the temperature was 25 ° C and 55% relative humidity. After storage for 1 hour at 200 ℃ 60 minutes after the end of heat treatment again using a tensile tester to measure the 180 ° adhesive strength at a peel rate of 300mm / min.
The method of claim 1,

The first adhesive layer and the second adhesive layer is a temporary adhesive film for a thermosetting semiconductor wafer, characterized in that it comprises a silicon-based adhesive binder.
The method of claim 1,

The core layer is at least one film selected from the group consisting of polyetheretherketone (PEEK), polyethyleneimine (PEI), polyimide (PI) and polyethersulfone (PES) Temporary adhesive film for thermosetting semiconductor wafer.
The temporary adhesive film according to any one of claims 1 to 12;

A carrier wafer formed facing the first adhesive layer of the temporary adhesive film; And

And a device wafer formed facing the second adhesive layer of the temporary adhesive film.
The method of claim 13,

Laminated body comprising a temporary adhesive film, characterized in that further comprising a protective layer between the device wafer and the temporary adhesive film.
The method of claim 14,

The protective layer is a laminate comprising a temporary adhesive film, characterized in that it comprises a curable silicone resin.
The method of claim 13,

A laminate comprising a temporary adhesive film, wherein the adhesive force between the first adhesive layer and the carrier wafer satisfies the following conditions (5) and (6).

(5) The adhesive strength measured by the following measuring method 5 is 50 ~ 200 gf / 25mm

(6) The adhesive strength measured by the following measuring method 6 is 100 ~ 300 gf / 25mm

* Adhesive Strength Measurement Method 5

Cut the temporary adhesive film into 2.5cm × 10cm lengths, and attach the specimen to the first adhesive layer on the silicon wafer without any surface treatment in accordance with JIS Z 0237. And 180 ° adhesive strength at a peel rate of 300 mm / min using a tensile tester after storage for 1 hour at 55% relative humidity.

* Adhesive Strength Measurement Method 6

Cut the temporary adhesive film into 2.5cm × 10cm lengths, and attach the specimen to the first adhesive layer on the silicon wafer without any surface treatment in accordance with JIS Z 0237. And after storing for 1 hour at 55% relative humidity conditions and again after the heat treatment for 60 minutes at 200 ℃ using a tensile tester to measure the 180 ° adhesive strength at a peel rate of 300mm / mim.
The method of claim 13,

A laminate comprising a temporary adhesive film, wherein the adhesive force between the second adhesive layer and the device wafer satisfies the following conditions (7) and (8).

(7) The adhesive strength measured by the following measuring method 7 is 2 ~ 10 gf / 25mm

(8) The adhesive strength measured by the following measuring method 8 is 5 ~ 25 gf / 25mm

* Measuring method of adhesive strength 7

According to JIS Z 0237, the specimen cut off the temporary adhesive film in the size of 2.5cm × 10cm in length and the silicon adhesive agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) 2kg of roller was attached to the spin-coated silicon wafer with thickness, and stored for 1 hour at 25 ℃ and 55% relative humidity, and then 180 ° adhesive strength was applied at a peel rate of 300 mm / min using a tensile tester. Measure

* Adhesive Strength Measurement Method 8

According to JIS Z 0237, the specimen cut off the temporary adhesive film in the size of 2.5cm × 10cm in length and the silicon adhesive agent (KS-3755, Shin-Etsu Chemical Co., Ltd.) Attached to a spin-coated silicon wafer with a thickness of 2kg with a roller, stored for 1 hour at 25 ℃ and 55% relative humidity conditions and then heat treatment at 200 ℃ for 60 minutes and 300 mm / mim using a tensile tester The 180 ° adhesive strength is measured at the peel rate.
(1) The carrier wafer is adhered to face the first adhesive layer included in the temporary adhesive film according to any one of claims 1 to 12, and the device wafer is mounted on the second adhesive layer included in the temporary adhesive film. Bonding to face to form a laminate;

(2) cutting the temporary adhesive film and the device wafer interface at one end of the laminate; And

(3) removing the carrier wafer and the temporary adhesive film from the laminate by separating the carrier wafer and the temporary adhesive film at a predetermined angle from one end of the cut laminate; a laminate comprising a temporary adhesive film comprising a How to separate.
The method of claim 18,

The device wafer of step (1) includes a protective layer on one surface facing the second adhesive layer, and the protective layer is bonded to the second adhesive layer, step (2) is to cut the temporary adhesive film and the protective layer interface Separation method of a laminate comprising a temporary adhesive film, characterized in that.
19. The method of claim 18, wherein the step (2) and (3)

(a) thin film processing the other surface of the device wafer that does not face the temporary adhesive film; And

(B) performing a back surface processing on the surface of the thin film; separation method of the laminate comprising a temporary adhesive film further comprises.