WO2016169397A1 - 柔性显示装置及其制作方法 - Google Patents

柔性显示装置及其制作方法 Download PDF

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Publication number
WO2016169397A1
WO2016169397A1 PCT/CN2016/077611 CN2016077611W WO2016169397A1 WO 2016169397 A1 WO2016169397 A1 WO 2016169397A1 CN 2016077611 W CN2016077611 W CN 2016077611W WO 2016169397 A1 WO2016169397 A1 WO 2016169397A1
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WIPO (PCT)
Prior art keywords
manufacturing
flexible substrate
rigid carrier
display device
cutting
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PCT/CN2016/077611
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English (en)
French (fr)
Inventor
谢春燕
谢明哲
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/322,142 priority Critical patent/US10347669B2/en
Publication of WO2016169397A1 publication Critical patent/WO2016169397A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing

Definitions

  • the present disclosure relates to the field of display fabrication, and more particularly to a flexible display device and a method of fabricating the same.
  • a method of preparing a flexible display device in the related art is generally a method of coating a flexible material on a glass carrier to form a flexible substrate, and then preparing a thin film transistor (TFT), a light-emitting element, and the like on the flexible substrate.
  • TFT thin film transistor
  • the flexible device is usually separated from the glass carrier by a laser, but unevenness occurs due to the initial position and the end position of the flexible material coating. That is, the properties at the edge of the flexible substrate are different from those of the central region, so it is difficult to separate the entire glass carrier from the flexible device during laser separation, even damage to the flexible device.
  • One solution is to cut the uneven portion of the edge of the flexible substrate with a laser before laser stripping.
  • the flexible part can be cut, and the underlying glass cannot be damaged. Because the glass is damaged, there may be a risk of cracks and fragments in the subsequent process, which affects the overall process yield.
  • the present disclosure provides a flexible display device and a method of fabricating the same that can prevent damage to a carrier when cutting components on a carrier.
  • Some embodiments of the present disclosure provide a method of fabricating a flexible display device, including:
  • the rigid carrier plate is provided with a cutting track
  • a flexible substrate including a reserved area and a non-retained area on the rigid carrier on which the protective pattern is formed, the flexible substrate covering the protective pattern, the reserved area and the non-reserved area
  • the critical position is located in the area occupied by the cutting track;
  • the diced flexible substrate substrate is peeled off from the rigid carrier.
  • the flexible substrate is laser cut; the protection pattern is made of a material having a laser absorption rate greater than a first threshold and/or a laser reflectance greater than a second threshold.
  • the protection pattern comprises two layers; wherein a laser absorption rate of one layer is greater than a first threshold, and a light reflectivity of the other layer is greater than a second threshold.
  • the material of the protection pattern is a metal material.
  • the metal material comprises one or more of silver, aluminum, and molybdenum.
  • the protective pattern has a thickness of 1000 angstroms to 2000 angstroms.
  • the rigid carrier is a glass carrier.
  • the cutting lane is pre-printed on the rigid carrier.
  • the present disclosure provides a flexible display device obtained by the above-described manufacturing method.
  • the solution of the present disclosure provides a protection pattern on the scribe line of the rigid carrier plate, by which the rigid carrier substrate is prevented from being damaged when the flexible substrate is cut on the rigid carrier, thereby preventing the rigid carrier from rupturing and affecting the subsequent carrier.
  • the fabrication of the flexible display device further improves the process yield.
  • FIG. 1 is a schematic diagram showing the steps of a method for fabricating a flexible display device according to the present disclosure
  • 2A-2E are detailed flow diagrams of a method of fabricating a flexible display device of the present disclosure.
  • Some embodiments of the present disclosure provide a method of fabricating a flexible display device, as shown in FIG. 1, including the following steps 11 to 16.
  • a rigid carrier is provided.
  • the rigid carrier is a glass carrier.
  • a protective pattern is formed on the rigid carrier.
  • the rigid carrier is provided with a dicing road, and a material layer of the protection pattern may be deposited on the rigid carrier, and a protection pattern corresponding to the area where the scribe line is covered is formed by a patterning process; or, A protective pattern having a uniform shape of the dicing streets is printed on the rigid carrier.
  • the cutting lane is pre-printed on the rigid carrier.
  • step 13 on the rigid carrier plate on which the protective pattern is formed, a flexible substrate substrate including a reserved region and a non-retained region is formed, the flexible substrate substrate covering the protective pattern.
  • step 14 a display device of the flexible display device is fabricated on the remaining area of the flexible substrate.
  • step 15 the flexible substrate substrate is cut along a scribe line to remove a non-retained area of the flexible substrate substrate, leaving a reserved area of the flexible substrate.
  • the cut produced by the cutting is in the area where the protection pattern is located.
  • step 16 the diced flexible substrate substrate is peeled off from the rigid carrier.
  • the manufacturing method of the embodiment provides a protection pattern on the dicing road of the rigid carrier board, and the protection pattern avoids damage to the rigid carrier board when cutting the flexible substrate substrate on the rigid carrier board along the scribe line, thereby avoiding rigid loading. After the plate is broken, the subsequent flexible display device is affected, and the process yield is improved.
  • the flexible substrate substrate may be cut using a laser, and correspondingly, the protection pattern may absorb and/or reflect the energy of the laser, and the protection pattern adopts a laser absorption rate greater than a first threshold, and/or A material having a laser reflectance greater than a second threshold.
  • the first threshold and the second threshold may be set according to actual laser cutting energy.
  • the protection pattern can be divided into two layers, one layer adopts a material that can absorb laser energy, and the other layer uses a material that can reflect laser light.
  • the protective pattern is fabricated using a composite material that can absorb laser energy and a material that can reflect the laser. Wherein, the laser absorption rate of the material capable of absorbing laser energy is greater than a first threshold, and the laser reflectance of the material capable of reflecting the laser light is greater than a second threshold.
  • the thickness of the metal protection pattern is preferably 1000 angstroms to 2000 angstroms, and after the thickness is greater than 1000 angstroms, the reflectance of the silver protective pattern is substantially 100%, and the reflectance of the protective pattern made of aluminum and molybdenum is also more than 90 percent. Since the metal protection pattern such as Ag, Al, and Mo can reflect most of the laser energy, it can fully withstand the laser cutting function to protect the rigid carrier.
  • the flow of the manufacturing method of this embodiment includes steps 21 to 25.
  • a protective pattern 2 is formed on the glass carrier 1, which covers the area occupied by the dicing streets of the glass carrier 1.
  • the cutting lane may be pre-printed on one side of the glass carrier 1 , and the area occupied by the cutting lane is as shown by the dashed line in the glass carrier 1 in FIG. 2A.
  • the cutting path is provided on one side surface of the glass carrier 1, and the area occupied by the cutting path is represented by a broken line in the glass carrier 1 for convenience.
  • step 22 as shown in FIG. 2B, on the glass carrier 1 on which the protective pattern 2 is formed, the flexible substrate substrate 3 covering the protective pattern 2 is formed.
  • a display device is fabricated on the flexible substrate substrate 3; wherein the flexible substrate substrate 3 includes a reserved area A and a non-retained area, that is, the non-retained area, that is, the flexible substrate substrate 3 Part of the area A is reserved, the display device being formed in the reserved area A, the critical position of the reserved area A and the non-reserved area being located in the area of the scribe line.
  • step 24 as shown in FIG. 2D, the edge of the flexible substrate substrate 3 is cut, the non-retained portion 32 of the flexible substrate substrate 3 is removed, and the remaining portion 31 of the flexible substrate substrate 3 is retained.
  • step 25 as shown in FIG. 2E, the diced flexible substrate is peeled off from the glass carrier to obtain a flexible display composed of the remaining portion 31 of the flexible substrate and the display device 4 having been fabricated. Device. It should be noted that the specific shape of the final flexible display device is not limited as shown in FIG. 2E.
  • the manufacturing method of the embodiment can avoid damage to the rigid carrier during the process of cutting the flexible substrate, thereby prolonging the service life of the rigid carrier to a certain extent, and improving the quality of the flexible display. Rate, reducing production costs.
  • an embodiment of the present disclosure further provides a flexible display device obtained by the above manufacturing method, and the flexible display device may be a flexible display device or the like capable of being bent.

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
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Abstract

一种柔性显示装置及其制作方法。制作方法包括：提供一刚性载板，刚性载板上设置有切割道；在刚性载板上形成一保护图案（2），保护图案覆盖切割道；在形成有保护图案的刚性载板上，形成包括保留区域（A）以及非保留区域的柔性衬底基板（3），柔性衬底基板覆盖保护图案，保留区域与非保留区域的临界位置位于切割道所占区域内；在柔性衬底基板的保留区域上，制作柔性显示装置的显示器件（4）；沿切割道对柔性衬底基板进行切割，去除柔性衬底基板的非保留区域并保留柔性衬底基板的保留区域；其中，切割所产生的切口落入保护图案所在区域内；以及将切割后的柔性衬底基板从刚性载板上剥离。

Description

柔性显示装置及其制作方法
相关申请的交叉引用
本申请主张在2015年4月23日在中国提交的中国专利申请号No.201510196706.4的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示器制作领域，特别是一种柔性显示装置及其制作方法。
背景技术
相关技术中的柔性显示器件的制备方法通常是在玻璃载板上涂布柔性材料，以形成柔性基板，然后在柔性基板上制备薄膜晶体管(TFT)和发光元件等。在完成显示器件制作之后，通常是利用激光将柔性器件(柔性基板、TFT以及发光元件)与玻璃载板分离，但是由于在柔性材料涂布的起始位置和结束位置会有不均匀现象发生，也就是柔性基板边缘处的性质会与其中心区域有所不同，所以在利用激光分离的过程中，要将整片玻璃载板与柔性器件分离会很困难，甚至对柔性器件造成损害。一种解决办法是在激光剥离前，将柔性基板边缘不均匀部分利用激光切割掉。但在切割过程中，只能切割柔性部分，不能对下层的玻璃产生损伤，因为玻璃一旦有损伤，在后续工艺中就可能有裂片、碎片的风险，影响整体的工艺良率。
发明内容
本公开提供一种柔性显示装置及其制作方法，能够防止切割载板上的元件时对载板造成损伤。
本公开的一些实施例提供一种柔性显示装置的制作方法，包括：
提供一刚性载板，所述刚性载板上设置有切割道；
在所述刚性载板上形成一保护图案，所述保护图案覆盖所述切割道；
在形成有所述保护图案的刚性载板上，形成包括有保留区域以及非保留区域的柔性衬底基板，所述柔性衬底基板覆盖所述保护图案，所述保留区域与所述非保留区域的临界位置位于所述切割道所占区域内；
在所述柔性衬底基板的保留区域上，制作所述柔性显示装置的显示器件；
沿所述切割道对所述柔性衬底基板进行切割，去除所述柔性衬底基板的非保留区域并保留所述柔性衬底基板的保留区域；其中，切割所产生的切口落入所述保护图案所在区域内；以及
将切割后的柔性衬底基板从所述刚性载板上剥离。
可选的，对所述柔性衬底基板进行激光切割；所述保护图案采用激光吸收率大于第一阈值，和/或激光反射率大于第二阈值的材料制成。
可选的，所述保护图案包括两层；其中一层的激光吸收率大于第一阈值，另一层的光反射率大于第二阈值。
可选的，所述保护图案的材料为金属材料。
可选的，所述金属材料包括银、铝和钼中的一种或多种。
可选的，所述保护图案的厚度为1000埃至2000埃。
可选的，所述刚性载板为玻璃载板。
可选的，所述切割道预先印制在所述刚性载板上。
此外，本公开提供一种柔性显示装置，该柔性显示装置由上述制作方法得到。
本公开的方案在刚性载板的切割道上设置了保护图案，通过该保护图案防止切割刚性载板上的柔性衬底基板时对所述刚性载板造成损伤，从而避免刚性载板破裂后影响后续柔性显示装置的制作，进而提高了工艺良率。
附图说明
图1为本公开的柔性显示装置的制作方法的步骤示意图；
图2A-图2E为本公开柔性显示装置的制作方法的详细流程示意图。
具体实施方式
为使本公开的技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
本公开的一些实施例提供一种柔性显示装置的制作方法，如图1所示，包括以下步骤11至步骤16。
在步骤11中，提供一刚性载板。可选的，该刚性载板为玻璃载板。
在步骤12中，在刚性载板上形成一保护图案。在本步骤中，所述刚性载板上设置有切割道，可在刚性载板上沉积保护图案的材料层，通过构图工艺形成出对应覆盖所述切割道所在区域的保护图案；或者，将与所述切割道整体形状一致的保护图案印在刚性载板上。可选的，所述切割道预先印制在所述刚性载板上。
在步骤13中，在形成有保护图案的刚性载板上，形成包括保留区域以及非保留区域的柔性衬底基板，所述柔性衬底基板覆盖所述保护图案。
在步骤14中，在所述柔性衬底基板的保留区域上，制作柔性显示装置的显示器件。
在步骤15中，沿切割道对所述柔性衬底基板进行切割，去除所述柔性衬底基板的非保留区域、保留所述柔性衬底基板的保留区域。其中，切割所产生的切口在保护图案所在区域内。
在步骤16中，将切割后的柔性衬底基板从所述刚性载板上剥离。
本实施例的制作方法在刚性载板的切割道上设置了保护图案，通过该保护图案避免沿所述切割道切割刚性载板上的柔性衬底基板时对刚性载板造成损伤，进而避免刚性载板破裂后影响后续柔性显示装置的制作，提高了工艺良率。
具体地，在上述步骤15中，可使用激光对柔性衬底基板进行切割，对应地，保护图案可以吸收和/或反射掉激光的能量，保护图案采用激光吸收率大于第一阈值，和/或激光反射率大于第二阈值的材料。这里第一阈值和第二阈值可根据实际的激光切割能量而设定。
当然，为能够更好地过滤掉激光的能量，可选的，在本公开的一些本实施 例中，所述保护图案可分为两层，一层采用可以吸收激光能量的材料，另一层采用可以反射激光的材料。或者，在本公开的一些本实施例中，所述保护图案采用可以吸收激光能量的材料和可以反射激光的材料的复合材料进行制作。其中，所述可以吸收激光能量的材料的激光吸收率大于第一阈值，所述可以反射激光的材料的激光反射率大于第二阈值。
在实际应用中，可以选用常见的金属材料来形成保护图案，如银Ag、铝Al和钼Mo等。其中，金属保护图案的厚度优选为1000埃至2000埃，在厚度大于1000埃后，银制保护图案的反射率基本可达100％，而铝、钼制成的保护图案的反射率也都在90％以上。由于Ag、Al和Mo等金属保护图案可反射绝大部分的激光能量，因此完全能够承受住激光切割起到保护刚性载板的作用。
下面对本实施例的制作方法的流程进行详细介绍。
本实施例的制作方法的流程包括步骤21至步骤25。
在步骤21中，如图2A所示，在玻璃载板1上形成保护图案2，所述保护图案2覆盖所述玻璃载板1的切割道所占区域。具体的，所述切割道可以预先印制在所述玻璃载板1的一侧，切割道所占区域如图2A中玻璃载板1内虚线所示。需要说明的是，切割道设置在玻璃载板1的一侧表面，为了方便在图中由玻璃载板1内的虚线来表现切割道所占区域。
在步骤22中，如图2B所示，在形成有保护图案2的玻璃载板1上，形成覆盖保护图案2的柔性衬底基板3。
在步骤23中，如图2C所示，在柔性衬底基板3上制作显示器件；其中，柔性衬底基板3包括保留区域A以及不保留区域，所述不保留区域即柔性衬底基板3除保留区域A的部分，所述显示器件形成在保留区域A中，所述保留区域A与非保留区域的临界位置位于所述切割道区域内中。
在步骤24中，如图2D所示，对柔性衬底基板3的边缘进行切割，去除所述柔性衬底基板3的不保留部分32，保留所述柔性衬底基板3的保留部分31。
在步骤25中，如图2E所示，将切割后的柔性衬底基板从玻璃载板上剥离，得到由柔性衬底基板的保留部分31以及已经制作好显示器件4组成柔性显示 装置。需要说明的是，图2E所示并不限定最终柔性显示装置的具体形状。
综上所述，本实施例的制作方法能够避免在切割柔性衬底基板过程中对刚性载板造成损伤，从而在一定程度上即延长了刚性载板的使用寿命，且提高了柔性显示器的良品率，降低了制作成本。
此外本公开的实施例还提供一种由上述制作方法得到的柔性显示装置，所述柔性显示装置可以是柔性显示屏等能够弯曲的设备。
以上所述是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (9)

  1. 一种柔性显示装置的制作方法，包括：
    提供一刚性载板，所述刚性载板上设置有切割道；
    在所述刚性载板上形成一保护图案，所述保护图案覆盖所述切割道；
    在形成有所述保护图案的刚性载板上，形成包括保留区域以及非保留区域的柔性衬底基板，所述柔性衬底基板覆盖所述保护图案，所述保留区域与所述非保留区域的临界位置位于所述切割道所占区域内；
    在所述柔性衬底基板的保留区域上，制作所述柔性显示装置的显示器件；
    沿所述切割道对所述柔性衬底基板进行切割，去除所述柔性衬底基板的非保留区域并保留所述柔性衬底基板的保留区域；其中，切割所产生的切口落入所述保护图案所在区域内；
    将切割后的柔性衬底基板从所述刚性载板上剥离。
  2. 根据权利要求1所述的制作方法，其中，所述沿所述切割道对所述柔性衬底基板进行切割包括：
    利用激光沿所述切割道对所述柔性衬底基板进行切割；
    所述保护图案采用激光吸收率大于第一阈值，和/或激光反射率大于第二阈值的材料制成。
  3. 根据权利要求2所述的制作方法，其中，
    所述保护图案包括两层；其中一层的激光吸收率大于第一阈值，另一层的光反射率大于第二阈值。
  4. 根据权利要求2所述的制作方法，其中，
    所述保护图案的材料为金属材料。
  5. 根据权利要求4所述的制作方法，其中，
    所述金属材料包括银、铝和钼中的一种或多种。
  6. 根据权利要求5所述的制作方法，其中，
    所述保护图案的厚度为1000埃至2000埃。
  7. 根据权利要求1所述的制作方法，其中，
    所述刚性载板为玻璃载板。
  8. 根据权利要求1所述的制作方法，其中，所述切割道预先印制在所述刚性载板上。
  9. 一种柔性显示装置，其中，所述柔性显示装置由权利要求1-8任一项的所述制作方法得到。
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