WO2016155181A1 - X射线平板探测器及其制备方法与白色绝缘材料 - Google Patents
X射线平板探测器及其制备方法与白色绝缘材料 Download PDFInfo
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- WO2016155181A1 WO2016155181A1 PCT/CN2015/086441 CN2015086441W WO2016155181A1 WO 2016155181 A1 WO2016155181 A1 WO 2016155181A1 CN 2015086441 W CN2015086441 W CN 2015086441W WO 2016155181 A1 WO2016155181 A1 WO 2016155181A1
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- flat panel
- thin film
- film transistor
- panel detector
- gate
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- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 14
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Images
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
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Definitions
- the present disclosure relates to an X-ray flat panel detector, a method of fabricating the same, and a white insulating material.
- Patent Document 1 describes a flat panel detection which realizes the cost reduction of the flat panel detector, thereby promoting the application of the flat panel detector more quickly and more widely.
- the key component of the indirect flat panel detector is the flat panel detector (FPD) for acquiring images, which consists of X-ray conversion layer and photodiode, thin film transistor, signal storage basic pixel. Unit and signal amplification and signal reading components.
- the working principle is: X-rays are converted into visible light of about 550 nm by the X-ray conversion layer, and visible light is converted into an electrical signal via a photodiode, and the electrical signal is stored in the signal storage unit through the thin film transistor, and is stored in the pixel unit by the driving circuit. The electric charge is transmitted to the readout circuit, and the readout circuit performs further amplification, analog/digital conversion, and the like on the electrical signal to finally obtain image information.
- the amorphous silicon film in the photodiode has a photo-induced degradation effect, resulting in a decrease in photoelectric conversion efficiency of the photodiode after a long period of illumination. Thinning the thickness of the amorphous silicon film helps to reduce the photo-induced degradation problem. However, the thickness of the amorphous silicon film is reduced, the incident light is not sufficiently absorbed, and a large amount of light is transmitted through the photodiode element, thereby reducing the conversion of the photodiode. effectiveness.
- Patent Document 1 Chinese Patent Publication CN101159283A
- the present disclosure provides an X-ray flat panel detector.
- the X-ray flat panel detector can reflect the light passing through the photoelectric conversion diode back into the photoelectric conversion diode, thereby effectively improving the utilization efficiency of the incident light, thereby improving the quantum detection efficiency and sensitivity of the detector.
- the X-ray flat panel detector provided by the present disclosure includes:
- An insulating reflective layer disposed on the thin film transistor substrate and having a reflective effect, wherein a contact hole exposing a source of the thin film transistor substrate is disposed in the insulating reflective layer;
- a pixel electrode disposed on the insulating reflective layer, the pixel electrode being electrically connected to a source of the thin film transistor substrate by covering sidewalls and a bottom surface of the contact hole;
- An X-ray conversion layer disposed on the electrode.
- the thin film transistor substrate includes:
- a source and a drain formed on the active layer are identical to each other.
- the insulating reflective layer is made of a white insulating material containing a powder of 80% to 98% of a resin matrix and 2% to 20% of a light diffusing and reflective functional material.
- the light diffusing reflective functional material is a white inorganic material such as titanium dioxide, zinc oxide, barium sulfate, calcium carbonate or the like, preferably titanium dioxide, more preferably anatase titanium dioxide.
- the resin matrix is at least one selected from the group consisting of polyethylene-vinyl acetate, ethylene-vinyl acetate formaldehyde crosslinked polymer, thermoplastic polyurethane elastomer, or ions of the above three materials.
- Type complex type modified material.
- the white insulating material may further contain 0.5% to 8% of an auxiliary agent.
- the auxiliary agent is a plasticizer.
- the present disclosure also provides a white insulating material comprising a powder of 80% to 98% resin matrix and 2% to 20% light diffusing functional material.
- the light diffusing reflective functional material is a white inorganic material such as titanium dioxide, zinc oxide, barium sulfate, calcium carbonate or the like, preferably titanium dioxide, more preferably anatase titanium dioxide.
- the resin matrix is at least one selected from the group consisting of polyethylene-vinyl acetate, ethylene-vinyl acetate formaldehyde crosslinked polymer, thermoplastic polyurethane elastomer, or ions of the above three materials.
- Type complex type modified material.
- the white insulating material may further contain 0.5% to 8% of an auxiliary agent.
- the auxiliary agent is a plasticizer.
- the present disclosure also provides a method for preparing the X-ray flat panel detector, comprising the following steps:
- the pixel electrode is electrically connected to a source of the thin film transistor substrate through sidewalls and a bottom surface formed on the contact hole;
- An X-ray conversion layer is formed on the electrode.
- the thin film transistor substrate is prepared as follows:
- a source electrode, a drain electrode, and a data scan line are formed on the active layer.
- the insulating reflective layer is made of a white insulating material comprising a powder of 80% to 98% of a resin matrix and 2% to 20% of a light diffusing and reflective functional material.
- the light diffusing reflective functional material is a white inorganic material such as titanium dioxide, zinc oxide, barium sulfate, calcium carbonate or the like, preferably titanium dioxide, more preferably anatase titanium dioxide.
- the resin matrix is at least one selected from the group consisting of polyethylene-vinyl acetate, ethylene-vinyl acetate formaldehyde crosslinked polymer, thermoplastic polyurethane elastomer, or ions of the above three materials.
- Type complex type modified material.
- the white insulating material may further contain 0.5% to 8% of an auxiliary agent.
- the auxiliary agent is a plasticizer.
- the X-ray flat panel detector of the present disclosure has high quantum detection efficiency and sensitivity.
- FIG. 1 is a schematic view showing the structure of an X-ray flat panel detector of the present disclosure.
- FIG. 2 is a flow chart showing a method of preparing an X-ray flat panel detector of the present disclosure.
- the X-ray flat panel detector of the present disclosure can reflect the light transmitted through the photoelectric conversion diode back into the photoelectric conversion diode, effectively improve the utilization efficiency of the incident light, and improve the quantum detection efficiency and sensitivity of the detector.
- the X-ray flat panel detector of the present embodiment includes:
- a pixel electrode 4 disposed on the insulating reflective layer 5, the pixel electrode 4 being electrically connected to the source 7 of the thin film transistor substrate 6 by covering a sidewall and a bottom surface of the contact hole 8;
- the X-ray conversion layer 1 is disposed on the electrode 2.
- the insulating reflective layer 5 is made of a white insulating material.
- a white insulating material can be produced by forming a white insulating material into a film and curing it.
- the white insulating material comprises a powder of 80% to 98% resin matrix and 2% to 20% light diffusing functional material, and further may contain 0.5% to 8% auxiliary.
- the "%" means the weight % of each component with respect to the white insulating material unless otherwise specified.
- the white insulating material is used to form the X-ray flat panel detector of the present disclosure.
- the insulating reflective layer can reflect the light transmitted through the photoelectric conversion diode back into the photoelectric conversion diode, thereby effectively improving the utilization efficiency of the incident light and improving the quantum detection efficiency and sensitivity of the detector.
- the light diffuse reflection functional material is a reflective material, such as a white inorganic material, such as titanium dioxide, zinc oxide, barium sulfate, calcium carbonate, etc., preferably titanium dioxide, most preferably anatase Type titanium dioxide.
- a white inorganic material such as titanium dioxide, zinc oxide, barium sulfate, calcium carbonate, etc., preferably titanium dioxide, most preferably anatase Type titanium dioxide.
- the light diffuse reflection functional material is preferably in the form of a powder.
- the powder may have an average particle diameter of from 1 to 1,000 ⁇ m, preferably from 200 to 500 ⁇ m, more preferably from 250 to 300 ⁇ m.
- the modified titanium oxide obtained by modifying titanium dioxide with at least one of a rare earth metal inorganic substance and an organic rare earth metal complex is preferable.
- the modified titanium dioxide particles are less prone to agglomeration, are easy to infiltrate in the organic phase, improve their compatibility with organic molecules, and improve dispersion stability.
- the resin substrate is a resin material having a light transmitting effect
- the resin matrix is at least one selected from the group consisting of polyethylene-vinyl acetate, ethylene-vinyl acetate formaldehyde cross-linked polymer.
- the thermoplastic polyurethane elastomer is more preferably an ionic or complex type modified material of the above three materials.
- the bond strength of the resin matrix will be greatly reduced, and the creep resistance of the film formation will be poor.
- the rubber layer Under the long-term static load, the rubber layer will also slide. At the same time, it has moisture resistance, cold resistance and mechanical stability.
- the above characteristics of the resin material can be improved by modifying the material constituting the resin substrate.
- the white insulating material may further contain 0.5% to 8% of an auxiliary agent.
- the auxiliaries well known in the art for example, plasticizers, lubricants, antioxidants, UV inhibitors, stabilizers, etc.
- plasticizers for example, plasticizers, lubricants, antioxidants, UV inhibitors, stabilizers, etc.
- a plasticizer is preferred, and a plasticizer known in the art can be used.
- a white insulating material is formed, and further, a film is formed and cured to form an insulating reflective layer.
- the method for film formation and curing is appropriately selected depending on the resin matrix, and is not particularly limited.
- the thin film transistor substrate includes:
- a source and a drain formed on the active layer are identical to each other.
- the thin film transistor substrate is not limited to the above structure, and the top-gate type and the bottom-gate type thin film collective tube in the prior art can be applied to the present disclosure without further limitation.
- a method of manufacturing an X-ray flat panel detector in the present disclosure includes the following steps:
- the substrate may be a glass substrate, a quartz substrate or the like.
- a gate line film is deposited on the substrate, and a gate electrode and a gate line connected to the gate are formed by a patterning process.
- a gate line film may be deposited on the substrate by sputtering or thermal evaporation, and the gate line film may use a metal such as Cr, W, Ti, Ta, Mo, Al or Cu and an alloy thereof, and then The gate line film is etched by a patterning process using a mask to form a gate and a gate line connected to the gate.
- the patterning process generally includes a substrate cleaning, film formation, photoresist coating, exposure, development, etching, photoresist stripping, etc.; the metal layer is usually formed by physical vapor deposition (for example, magnetron sputtering). A pattern is formed by wet etching, and a film is usually formed by chemical vapor deposition for a non-metal layer, and a pattern is formed by dry etching.
- a gate insulating layer film may be formed on a substrate on which a gate electrode and a gate line are formed by plasma enhanced chemical vapor deposition (PECVD) to form a gate insulating layer 3.
- the gate insulating layer film may be an oxide, a nitride or an oxynitride, and the corresponding reaction gas may be a mixed gas of SiH 4 , NH 4 , N 2 or a mixed gas of SiH 2 Cl 4 , NH 3 , and N 2 .
- a source/drain metal thin film is deposited on the substrate on which the gate insulating layer is formed.
- S5 forming a source electrode, a drain electrode, and a data scan line on the active layer to obtain a thin film transistor substrate.
- the source electrode, the drain electrode, and the data scan line (not shown) are formed by a patterning process.
- the insulating reflective layer is a film made of a white insulating material.
- the white insulating material includes, for example, the following contents by weight: 85% polyethylene-vinyl acetate, 14% powder of anatase type titanium dioxide having an average particle diameter of 250 ⁇ m, and 1% plasticizer.
- a white insulating material film, that is, an insulating reflective layer, is obtained by mixing, forming, and curing a powder of 85% polyethylene-vinyl acetate, 14% anatase titanium dioxide, and 1% plasticizer.
- the reflectance of the insulating reflective layer at a light wavelength of 550 nm was measured to be 93.2%.
- the quantum detection efficiency of the X-ray flat panel detector is improved from 40% to 45% compared to an X-ray flat panel detector that does not use a white insulating material film.
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Abstract
Description
Claims (25)
- 一种X射线平板探测器,包括:薄膜晶体管基板;设置于该薄膜晶体管基板上具有漫反射作用的绝缘反射层,在该绝缘反射层中设有暴露该薄膜晶体管基板的源极的接触孔;设置在该绝缘反射层上的像素电极,该像素电极通过该接触孔与该薄膜晶体管基板的源极导通;覆盖该像素电极的光电二极管;设置在该光电二极管上的电极;和设置在该电极上的X射线转换层。
- 根据权利要求1所述的X射线平板探测器,其特征在于,该薄膜晶体管基板包括基板;形成于该基板上的栅极;形成于该栅极上的栅绝缘层;形成于该栅绝缘层上方的有源层;和形成于该有源层上的源极和漏极。
- 根据权利要求1所述的X射线平板探测器,其特征在于,该绝缘反射层由白色绝缘材料制成,该白色绝缘材料以重量百分比计含有80%~98%树脂基体和2%~20%光线漫反射功能材料的粉末。
- 根据权利要求1所述的X射线平板探测器,其特征在于,该光线漫反射功能材料为二氧化钛、氧化锌、硫酸钡、碳酸钙中的至少一种。
- 根据权利要求4所述的X射线平板探测器,其特征在于,该光线漫反射功能材料为二氧化钛。
- 根据权利要求5所述的X射线平板探测器,其特征在于,该光线漫反射功能材料为锐钛矿型二氧化钛。
- 根据权利要求1所述的X射线平板探测器,其特征在于,该树脂基体选自下述至少一种:聚乙烯-醋酸乙烯、乙烯-醋酸乙烯甲醛交联聚合物、热塑 性聚氨酯弹性体,或者上述三种材料的离子型、络合型改性材料。
- 根据权利要求1所述的X射线平板探测器,其特征在于,该白色绝缘材料进一步含有0.5%~8%的助剂。
- 根据权利要求8所述的X射线平板探测器,其特征在于,该助剂为塑化剂。
- 一种白色绝缘材料,以重量百分比计含有80%~98%树脂基体和2%~20%光线漫反射功能材料的粉末。
- 根据权利要求10所述的白色绝缘材料,其特征在于,该光线漫反射功能材料为二氧化钛、氧化锌、硫酸钡、碳酸钙中的至少一种。
- 根据权利要求11所述的白色绝缘材料,其特征在于,该光线漫反射功能材料为二氧化钛。
- 根据权利要求12所述的白色绝缘材料,其特征在于,该光线漫反射功能材料为锐钛矿型二氧化钛。
- 根据权利要求10所述的白色绝缘材料,其特征在于,该树脂基体选自下述至少一种:聚乙烯-醋酸乙烯、乙烯-醋酸乙烯甲醛交联聚合物、热塑性聚氨酯弹性体,或者上述三种材料的离子型、络合型改性材料。
- 根据权利要求10所述的白色绝缘材料,其特征在于,该白色绝缘材料进一步含有0.5%~8%的助剂。
- 根据权利要求15所述的白色绝缘材料,其特征在于,该助剂为塑化剂。
- 一种X射线平板探测器的制备方法,包括如下步骤:提供薄膜晶体管基板;在该薄膜晶体管基板上形成具有反射作用的绝缘反射层,在该绝缘反射层中设有暴露该薄膜晶体管基板的源极的接触孔;在该绝缘反射层上形成像素电极,该像素电极通过该接触孔与该薄膜晶体管基板的源极导通;在该像素电极上形成光电二极管;在该光电二极管上形成电极;以及在该电极上形成X射线转换层。
- 根据权利要求17所述的制备方法,其特征在于,该薄膜晶体管基板按照如下步骤制备:提供基板;在该基板上形成栅极以及与该栅极连接的栅线;在该栅极、栅线上形成栅绝缘层;在该栅绝缘层上形成有源层;以及在该有源层上形成源电极、漏电极与数据扫描线。
- 根据权利要求17所述的制备方法,其特征在于,该绝缘反射层由白色绝缘材料制成,该白色绝缘材料以重量百分比计含有80%~98%树脂基体和2%~20%光线漫反射功能材料的粉末。
- 根据权利要求19所述的制备方法,其特征在于,该光线漫反射功能材料为二氧化钛、氧化锌、硫酸钡、碳酸钙中的至少一种。
- 根据权利要求20所述的制备方法,其特征在于,该光线漫反射功能材料为二氧化钛。
- 根据权利要求21所述的制备方法,其特征在于,该光线漫反射功能材料为锐钛矿型二氧化钛。
- 根据权利要求19所述的制备方法,其特征在于,该树脂基体选自下述至少一种:聚乙烯-醋酸乙烯、乙烯-醋酸乙烯甲醛交联聚合物、热塑性聚氨酯弹性体,或者上述三种材料的离子型、络合型改性材料。
- 根据权利要求19所述的制备方法,其特征在于,该白色绝缘材料进一步含有0.5%~8%的助剂。
- 根据权利要求24所述的制备方法,其特征在于,该助剂为塑化剂。
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