WO2016150043A1 - 一种掩膜板、掩膜曝光设备及掩膜曝光方法 - Google Patents

一种掩膜板、掩膜曝光设备及掩膜曝光方法 Download PDF

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Publication number
WO2016150043A1
WO2016150043A1 PCT/CN2015/084445 CN2015084445W WO2016150043A1 WO 2016150043 A1 WO2016150043 A1 WO 2016150043A1 CN 2015084445 W CN2015084445 W CN 2015084445W WO 2016150043 A1 WO2016150043 A1 WO 2016150043A1
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WIPO (PCT)
Prior art keywords
mask
substrate
processed
positioning groove
groove
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PCT/CN2015/084445
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English (en)
French (fr)
Inventor
藤野诚治
张嵩
王涛
高静
杜小波
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to EP15795099.9A priority Critical patent/EP3276413B1/en
Priority to US14/894,147 priority patent/US10067417B2/en
Publication of WO2016150043A1 publication Critical patent/WO2016150043A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a mask, a mask exposure apparatus, and a mask exposure method.
  • the display substrate usually requires multiple mask exposures during the fabrication process, and each time a mask exposure is performed, a mask having a specific pattern is usually required.
  • Existing masks are typically open masks that include strip or grooved mask openings. During the exposure of the mask, the light is irradiated through the mask opening to etch the photoresist to effect patterning of the photoresist.
  • Embodiments of the present invention provide a mask, a mask exposure apparatus, and a mask exposure method to implement a mask for a closed loop opening, thereby improving the quality of film formation on the substrate.
  • a mask including a tray
  • the tray has at least one mask positioning groove, and each of the mask positioning grooves is disposed Mask.
  • the mask positioning groove comprises at least one rectangular groove arranged in an array.
  • the mask positioning groove further includes at least one strip groove located at a periphery of the rectangular groove.
  • a shape of the mask corresponds to a shape of the mask positioning groove, and a size of the mask is smaller than a size of the mask positioning groove.
  • the tray is made of a transparent material.
  • a rectangular mask is disposed in the rectangular slot and a frame mask is disposed in the strip slot.
  • the rectangular mask of the rectangular slot is isolated from the frame mask of the strip slot.
  • a mask exposure apparatus including a stage, one side of the stage for carrying a substrate to be processed;
  • the other side of the substrate to be processed is provided with a mask as described above, and the mask side of the mask faces the substrate to be processed.
  • the stage is further provided with a mask adsorption plate for adsorbing the mask on the surface of the substrate to be processed.
  • the mask is made of a metal material, and the mask adsorption plate is disposed on the other side of the stage and made of a magnetic material.
  • a mask exposure method is provided, which is suitable for the mask exposure apparatus as described above, the method comprising:
  • the substrate to be processed to which the mask is adsorbed is subjected to mask exposure.
  • the mask, the mask exposing device and the mask exposing method are provided.
  • the mask adopts a tray structure having at least one mask positioning groove, and each mask positioning groove is provided with a mask.
  • the mask is separated from the frame mask by the positioning groove by means of the positioning groove to avoid the connection of the bridge portion, thereby avoiding the coating of the bridge portion.
  • the efficiency and uniformity are not ideal, and the effect on the film formation quality on the substrate is effective.
  • a mask for the closed loop opening is now available.
  • 1 is a schematic structural view of a closed loop opening mask
  • FIG. 2 is a schematic structural view of a mask in the prior art
  • FIG. 3 is a cross-sectional view showing the structure of a mask according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a mask according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a mask exposure apparatus according to an embodiment of the present invention.
  • FIG. 6 is a schematic flow chart of a mask exposure method according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of a use of a mask exposure apparatus according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram of the use of another mask exposure apparatus according to an embodiment of the present invention.
  • the mask 1 provided in the embodiment of the present invention, as shown in FIG. 3, includes a tray 2.
  • the tray 2 has at least one mask positioning groove 3, and a mask 4 is disposed in each of the mask positioning grooves 3.
  • the embodiment of the invention provides a mask.
  • the mask plate adopts a tray structure having at least one mask positioning groove, and each mask positioning groove is provided with a mask.
  • the mask is separated from the bezel mask by the positioning groove by means of the mask of the closed-loop opening without connecting through the bridge portion. This avoids the influence of the coating efficiency of the bridge portion and the unsatisfactory uniformity on the film formation quality on the substrate, thereby effectively realizing the mask of the closed loop opening.
  • the mask positioning groove 3 includes at least one rectangular groove 31 arranged in an array.
  • the rectangular groove 31 is for carrying a rectangular mask.
  • the substrate mother board typically has a plurality of substrates to be processed arranged in an array.
  • the position of the rectangular groove can correspond to the position of the substrate to be processed, so that patterning processing of a plurality of substrates can be realized by one patterning process to improve production efficiency.
  • the mask positioning groove 3 may further include at least one strip groove 32 located at the periphery of the rectangular groove 31.
  • a strip-shaped mask frame surrounding the periphery of the rectangular mask may be disposed in the strip-shaped groove 32.
  • the shape of the mask may correspond to the shape of the mask positioning groove, and the size of the mask is smaller than the size of the mask positioning groove.
  • the tray 2 may be made of a transparent material. In this way, in the process of performing mask exposure, only the tray 2 carrying the mask is attached to the surface of the substrate to be processed, and the area of the tray 2 between the masks can be used as the light-transmissive opening area. This setup is easy to use and easy to design and produce.
  • an embodiment of the present invention provides a mask exposure apparatus including a stage 5.
  • One side of the stage 5 is used to carry the substrate 6 to be processed.
  • the other side of the substrate 6 to be processed is provided with a mask 1 as described above, and one side of the mask 3 of the mask 1 faces the substrate 6 to be processed.
  • Embodiments of the present invention provide a mask exposure apparatus that includes a mask.
  • the mask plate employs a tray structure having at least one mask positioning groove and a mask is disposed in each of the mask positioning grooves.
  • the mask is separated from the mask mask by the positioning groove by means of the positioning of the closed-loop opening, without the connection of the bridge portion.
  • the rectangular mask of the rectangular groove is isolated from the frame mask of the strip groove by positioning the groove. This avoids the influence of the coating efficiency of the bridge portion and the unsatisfactory uniformity on the film formation quality on the substrate, thereby effectively realizing the mask of the closed loop opening.
  • the arrangement structure as shown in FIG. 5 is often employed.
  • the substrate 6 to be processed is suspended by the stage 5 and the lower surface of the substrate 6 to be processed is the surface to be processed.
  • the light passes through the mask 1 on the lower surface side of the substrate 6 to be processed.
  • the lower surface of the substrate 6 to be processed is shot to achieve patterning.
  • the above arrangement is merely an example.
  • the embodiment of the present invention does not specifically limit the installation position of the substrate.
  • a mask adsorption plate 7 may be further disposed on the stage 5.
  • the mask adsorption plate 7 is used to adsorb the mask 3 on the surface of the substrate 6 to be processed.
  • the mask 3 may be made of a metal material.
  • the mask adsorption plate 7 may be disposed on the other side of the stage 5 and made of a magnetic material.
  • the mask adsorption plate 7 of the magnetic material can be masked from the other side of the substrate 6 to be processed. 3 adsorbs and is positioned on the surface of the substrate 6 to be processed.
  • the tray 2 of the mask 1 can be moved out of the work area, leaving only the mask 3.
  • the quality of the exposure development is greatly improved while the closed-loop opening mask is realized, thereby avoiding the influence of the tray 3 on the exposure.
  • Embodiments of the present invention provide a mask exposure method suitable for the mask exposure apparatus as described above. As shown in FIG. 6, the method includes:
  • Step 601 A mask plate is disposed on a side of the stage carrying the substrate to be processed, and a mask of the mask plate faces the substrate to be processed.
  • Step 602 Adsorb the mask located in the mask positioning groove on the surface of the substrate to be processed.
  • Step 603 Perform mask exposure on the substrate to be processed with the mask adsorbed thereon.
  • the embodiment of the invention provides a mask exposure method, wherein the mask plate adopts a tray structure having at least one mask positioning groove, and each mask positioning groove is provided with a mask.
  • the mask is separated from the bezel mask by the positioning groove by means of the mask of the closed-loop opening without connecting through the bridge portion. This avoids the influence of the coating efficiency of the bridge portion and the unsatisfactory uniformity on the film formation quality on the substrate, thereby effectively realizing the mask of the closed loop opening.
  • the mask exposure method provided by the embodiment of the present invention will be described in detail below by taking the mask exposure apparatus shown in FIG. 5 as an example.
  • the holder for carrying the mask 1 of the stage 5 is raised, so that the mask 1 is bonded to the surface of the substrate 6 to be processed. Also located at the base to be processed The mask adsorption plate 7 on the other side of the plate 6 is lowered, so that the mask 3 in the mask 1 is adsorbed on the surface of the substrate to be processed, as shown in FIG.
  • the lower holder of the stage 5 carrying the tray 2 is removed, so that only the mask 3 remains on the lower surface of the substrate 6 to be processed.
  • the light is irradiated from the lower portion of the substrate to effect patterning of the photoresist.
  • the reverse of the foregoing flow can be performed.
  • the position of the mask positioning groove 3 is made to correspond to the mask 3 by moving into the lower holder of the stage 5 carrying the tray 2.
  • the mask adsorption plate 7 is then moved up so that the mask 3 falls again into the mask positioning groove 3.
  • the mask 1 is entirely removed, thereby completing the entire mask exposure process.
  • the mask is separated from the bezel mask by the positioning groove by means of the mask of the closed-loop opening without connecting through the bridge portion. This avoids the influence of the coating efficiency of the bridge portion and the unsatisfactory uniformity on the film formation quality on the substrate, thereby effectively realizing the mask of the closed loop opening.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种掩膜板、掩膜曝光设备及掩膜曝光方法，属于显示技术领域。掩膜板包括托盘；所述托盘上具有至少一个掩膜定位槽，每一个所述掩膜定位槽内设置有掩膜。上述掩膜板、掩膜曝光设备及掩膜曝光方法能够有效实现闭环开口的掩膜，从而提高基板上成膜的质量。

Description

一种掩膜板、掩膜曝光设备及掩膜曝光方法
相关申请的交叉引用
本申请主张在2015年3月26日在中国提交的中国专利申请号No.201510136925.3的优先权，其全部内容通过引用包含于此。
技术领域
本发明涉及显示技术领域，特别涉及一种掩膜板、掩膜曝光设备及掩膜曝光方法。
背景技术
显示基板在制作的过程中通常需要进行多次掩膜曝光，每一次进行掩膜曝光通常需要采用一张具有特定图案的掩膜板。现有的掩膜板一般为开放式掩膜(Open Mask)，其包括条状或槽状的掩膜开口。在掩膜曝光的过程中，光线透过掩膜开口照射光刻胶来实现光刻胶的图案化。
现有的掩膜板不能实现闭环(Closed loop)的掩膜开口，如图1所示。在需要得到闭环图案时则需要借助多次掩膜曝光，大大提高了生产成本，降低了生产效率。为了实现这种闭环开口的掩膜，现有技术通常应用在掩膜板上增加桥梁(Rib)(如图2中虚线框所示)的设计。但是这种掩膜板的不足之处在于，桥梁部分所对应的镀膜效率以及成膜的均匀性均不理想，从而严重影响基板上成膜的整体质量。
发明内容
(一)要解决的技术问题
本发明实施例提供了一种掩膜板、掩膜曝光设备及掩膜曝光方法，以实现闭环开口的掩膜，提高基板上成膜的质量。
(二)技术方案
本发明实施例提供的技术方案如下：
本发明实施例的一方面，提供了一种掩膜板，包括托盘；
所述托盘上具有至少一个掩膜定位槽，每一个所述掩膜定位槽内设置有 掩膜。
可选地，所述掩膜定位槽包括至少一个呈阵列形式排布的矩形槽。
可选地，所述掩膜定位槽还包括位于所述矩形槽周边的至少一个条状槽。
可选地，所述掩膜的形状与所述掩膜定位槽的形状对应，且所述掩膜的尺寸小于所述掩膜定位槽的尺寸。
可选地，所述托盘由透明材料制成。
可选地，所述矩形槽内设置有矩形掩膜并且所述条状槽内设置有边框掩膜。
可选地，所述矩形槽的矩形掩膜与所述条状槽的边框掩膜隔离。
本发明实施例的另一方面，提供了一种掩膜曝光设备，包括载台，所述载台的一侧用于承载待加工基板；
所述待加工基板的另一侧设置有如上所述的掩膜板，所述掩膜板的掩膜一侧面向所述待加工基板。
可选地，所述载台还设置有掩膜吸附板，所述掩膜吸附板用于将掩膜吸附在待加工基板的表面。
可选地，所述掩膜由金属材料制成，所述掩膜吸附板被设置于所述载台的另一侧并且由磁性材料制成。
本发明实施例的又一方面，提供了一种掩膜曝光方法，适用于如上所述的掩膜曝光设备，所述方法包括：
在承载有待加工基板的载台一侧设置掩膜板，所述掩膜板的掩膜面向所述待加工基板；
将位于所述掩膜定位槽内的掩膜吸附在所述待加工基板的表面；
对吸附有所述掩膜的待加工基板进行掩膜曝光。
(三)有益效果
本发明实施例提供的掩膜板、掩膜曝光设备及掩膜曝光方法，掩膜板采用具有至少一个掩膜定位槽的托盘结构，每一个掩膜定位槽内设置有掩膜。采用如此结构的掩膜板，相较于闭环开口的掩膜，掩膜通过定位槽托举的方式来隔离掩膜部分与边框掩膜而无需通过桥梁部分连接，从而避免了由于桥梁部分的镀膜的效率，均匀性均不理想而对基板上成膜质量的影响，有效实 现了闭环开口的掩膜。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是闭环开口掩膜的结构示意图；
图2是现有技术中一种掩膜板的结构示意图；
图3是本发明实施例提供的一种掩膜板的结构剖视图；
图4是本发明实施例提供的一种掩膜板的结构示意图；
图5是本发明实施例提供的一种掩膜曝光设备的结构示意图；
图6是本发明实施例提供的一种掩膜曝光方法的流程示意图；
图7是本发明实施例提供的掩膜曝光设备的使用情况示意图；
图8是本发明实施例提供的另一掩膜曝光设备的使用情况示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
本发明实施例提供的掩膜板1，如图3所示，包括托盘2。
其中，托盘2上具有至少一个掩膜定位槽3，每一个掩膜定位槽3内设置有掩膜4。
本发明实施例提供了掩膜板。该掩膜板采用具有至少一个掩膜定位槽的托盘结构，每一个掩膜定位槽内设置有掩膜。采用如此结构的掩膜板中，相较于闭环开口的掩膜，掩膜通过定位槽托举的方式来隔离掩膜部分与边框掩膜而无需通过桥梁部分连接。这避免了由于桥梁部分的镀膜的效率，均匀性均不理想而对基板上成膜质量的影响，从而有效实现了闭环开口的掩膜。
进一步的，如图4所示，掩膜定位槽3包括至少一个呈阵列形式排布的矩形槽31。该矩形槽31用于承载矩形掩膜。在实际生产的过程中，一张显 示基板母板上通常具有呈阵列形式排布的多个待加工基板。矩形槽的位置可以与待加工基板的位置相对应，从而能够通过一次构图工艺实现对多个基板的图案化处理以提高生产效率。
进一步的，如图4所示，掩膜定位槽3还可以包括位于矩形槽31周边的至少一个条状槽32。条状槽32中可以设置有环绕在矩形掩膜周边的条状掩膜边框。矩形掩膜与条状掩膜之间无需设置桥梁结构，从而实现了闭环开口的掩膜。
需要说明的是，在本发明实施例中，掩膜的形状可以与掩膜定位槽的形状对应，且掩膜的尺寸小于掩膜定位槽的尺寸。
进一步的，在本发明实施例中，托盘2可以由透明材料制成。这样一来，在进行掩膜曝光的过程中，只需将承载有掩膜的托盘2贴合于待加工基板的表面，掩膜之间的托盘2的区域即可作为透光的开口区域。这一设置达到了使用简单方便，易于设计和制作的效果。
如图5所示，本发明实施例提供了掩膜曝光设备，其包括载台5。载台5的一侧用于承载待加工基板6。
待加工基板6的另一侧设置有如上所述的掩膜板1，该掩膜板1的掩膜3的一侧面向待加工基板6。
本发明实施例提供了掩膜曝光设备，其包括掩膜板。该掩膜板采用具有至少一个掩膜定位槽的托盘结构并且每一个掩膜定位槽内设置有掩膜。采用如此结构的掩膜板，相较于闭环开口的掩膜，掩膜通过定位槽托举的方式来隔离掩膜部分(诸如，矩形掩膜等)与边框掩膜而无需通过桥梁部分连接。例如，通过定位槽托举的方式将矩形槽的矩形掩膜与条状槽的边框掩膜隔离。这避免了由于桥梁部分的镀膜的效率，均匀性均不理想而对基板上成膜质量的影响，从而有效实现了闭环开口的掩膜。
其中，已在前述实施例中对掩膜板的结构做了详细的描述，此处不再赘述。
需要说明的是，在基板的实际加工过程中，常采用如图5所示的设置结构。其中，通过载台5来悬挂待加工基板6并且待加工基板6的下表面是其待加工面。曝光过程中，光线通过在待加工基板6下表面一侧的掩膜板1照 射待加工基板6的下表面以实现构图。当然，以上设置也仅仅是一种举例说明，本发明实施例对基板的设置位置并不做具体限制。
进一步的，如图5所示，载台5上还可以设置有掩膜吸附板7。该掩膜吸附板7用于将掩膜3吸附在待加工基板6的表面。
具体地，掩膜3可以由金属材料制成。掩膜吸附板7可以被设置于载台5的另一侧并且由磁性材料制成。如此在进行掩膜曝光的过程中，当承载掩膜3的掩膜板1靠近待加工基板6的表面时，磁性材料的掩膜吸附板7能够从待加工基板6的另一侧将掩膜3吸附并定位在待加工基板6的表面。当进行曝光显影时，可以将掩膜板1的托盘2移出工作区域，仅仅保留掩膜3。如此在实现闭环开口掩膜的同时大大提高了曝光显影的质量，从而避免了托盘3对曝光的影响。
本发明实施例提供了掩膜曝光方法，其适用于如上所述的掩膜曝光设备，如图6所示，所述方法包括：
步骤601：在承载有待加工基板的载台一侧设置掩膜板，该掩膜板的掩膜面向所述待加工基板。
步骤602：将位于掩膜定位槽内的掩膜吸附在待加工基板的表面。
步骤603：对吸附有掩膜的待加工基板进行掩膜曝光。
本发明实施例提供了掩膜曝光方法，其中，掩膜板采用具有至少一个掩膜定位槽的托盘结构，每一个掩膜定位槽内设置有掩膜。采用如此结构的掩膜板，相较于闭环开口的掩膜，掩膜通过定位槽托举的方式来隔离掩膜部分与边框掩膜而无需通过桥梁部分连接。这避免了由于桥梁部分的镀膜的效率，均匀性均不理想而对基板上成膜质量的影响，从而有效实现了闭环开口的掩膜。
其中，已在前述实施例中对掩膜曝光设备的结构做了详细的描述，此处不再赘述。
具体地，以下以如图5所示的掩膜曝光设备为例，对本发明实施例提供的掩膜曝光方法进行详细的说明。
在对待加工基板6进行掩膜曝光的过程中，载台5的用于承载掩膜板1的支架上升，使得掩膜板1与待加工基板6的表面贴合。同时位于待加工基 板6另一侧的掩膜吸附板7下降，使得掩膜板1内的掩膜3吸附在待加工基板的表面，如图7所示。
当掩膜3吸附在待加工基板6表面之后，移出承载有托盘2的载台5的下部支架，从而在待加工基板6的下表面仅保留掩膜3。此时，如图8所示，由基板下部进行光线照射，从而实现光刻胶的图案化处理。
当掩膜曝光完成后，可以进行与前述流程相反的步骤。通过移入承载有托盘2的载台5的下部支架，使得掩膜定位槽3的位置与掩膜3对应。随后上移掩膜吸附板7，以使掩膜3再次落入掩膜定位槽3内。最后将掩膜板1整体移出，从而完成整个掩膜曝光的处理。
采用如此结构的掩膜曝光方法，相较于闭环开口的掩膜，掩膜通过定位槽托举的方式来隔离掩膜部分与边框掩膜而无需通过桥梁部分连接。这避免了由于桥梁部分的镀膜的效率，均匀性均不理想而对基板上成膜质量的影响，从而有效实现了闭环开口的掩膜。
以上所述仅为本发明的较佳实施例，并不用以限制本发明。凡在本发明的精神和原则之内，本领域技术人员所作的任何修改、等同替换、改进等，均应落入在本发明的保护范围之内。

Claims (11)

  1. 一种掩膜板，其中，包括托盘；
    所述托盘上具有至少一个掩膜定位槽，每一个所述掩膜定位槽内设置有掩膜。
  2. 根据权利要求1所述的掩膜板，其中，所述掩膜定位槽包括至少一个呈阵列形式排布的矩形槽。
  3. 根据权利要求1或2所述的掩膜板，其中，所述掩膜定位槽还包括位于所述矩形槽周边的至少一个条状槽。
  4. 根据权利要求1-3任一项所述的掩膜板，其中，所述掩膜的形状与所述掩膜定位槽的形状对应，且所述掩膜的尺寸小于所述掩膜定位槽的尺寸。
  5. 根据权利要求1-4任一项所述的掩膜板，其中，所述托盘由透明材料制成。
  6. 根据权利要求3所述的掩膜板，其中，并且所述矩形槽内设置有矩形掩膜并且所述条状槽内设置有边框掩膜。
  7. 根据权利要求6所述的掩膜板，其中，所述矩形槽的矩形掩膜与所述条状槽的边框掩膜隔离。
  8. 一种掩膜曝光设备，其中，包括载台，所述载台的一侧用于承载待加工基板；
    所述待加工基板的另一侧设置有如权利要求1-7任一项所述的掩膜板，所述掩膜板的掩膜一侧面向所述待加工基板。
  9. 根据权利要求8所述的掩膜曝光设备，其中，所述载台还设置有掩膜吸附板，所述掩膜吸附板用于将掩膜吸附在待加工基板的表面。
  10. 根据权利要求8或9所述的掩膜曝光设备，其中，所述掩膜由金属材料制成，所述掩膜吸附板被设置于所述载台的另一侧并且由磁性材料制成。
  11. 一种掩膜曝光方法，适用于如权利要求8-10任一项所述的掩膜曝光设备，其中，所述方法包括：
    在承载有待加工基板的载台一侧设置掩膜板，所述掩膜板的掩膜面向所述待加工基板；
    将位于所述掩膜定位槽内的掩膜吸附在所述待加工基板的表面；
    对吸附有所述掩膜的待加工基板进行掩膜曝光。
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