WO2016120047A1 - Composant semi-conducteur optoélectronique, dispositif optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique - Google Patents

Composant semi-conducteur optoélectronique, dispositif optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique Download PDF

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Publication number
WO2016120047A1
WO2016120047A1 PCT/EP2016/050386 EP2016050386W WO2016120047A1 WO 2016120047 A1 WO2016120047 A1 WO 2016120047A1 EP 2016050386 W EP2016050386 W EP 2016050386W WO 2016120047 A1 WO2016120047 A1 WO 2016120047A1
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic semiconductor
connection point
electrical connection
semiconductor chip
layer
Prior art date
Application number
PCT/EP2016/050386
Other languages
German (de)
English (en)
Inventor
Korbinian Perzlmaier
Anna Kasprzak-Zablocka
Stefanie Rammelsberger
Julian IKONOMOV
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to DE112016000474.5T priority Critical patent/DE112016000474A5/de
Priority to US15/544,288 priority patent/US10283686B2/en
Publication of WO2016120047A1 publication Critical patent/WO2016120047A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • An object to be solved is to specify an optoelectronic semiconductor component which can be produced particularly inexpensively. Another object to be achieved is to provide an optoelectronic semiconductor device, which is characterized by increased reliability during operation.
  • the optoelectronic semiconductor component is, for example, a radiation-emitting semiconductor element or a radiation-detecting semiconductor component.
  • the optoelectronic semiconductor component may be a light-emitting diode or a photodiode. In particular, it is possible that it is the optoelectronic
  • Semiconductor device is a so-called “semiconductor chip in a frame” component.
  • Such a component is
  • the optoelectronic component comprises
  • Semiconductor component at least one optoelectronic
  • the optoelectronic semiconductor chip In the optoelectronic semiconductor chip
  • this is a light-emitting diode chip or a photodiode chip. That is, in operation is the
  • the optoelectronic semiconductor chip may comprise a carrier, which may be, for example, a growth substrate or a carrier body that is different from a growth substrate. Furthermore, the optoelectronic semiconductor chip can be epitaxially grown
  • Layers containing at least one active zone, in which generates the electromagnetic radiation to be generated during operation of the optoelectronic semiconductor chip or the electromagnetic radiation to be detected is detected.
  • grown layers can be arranged a reflective layer which is formed with a reflective material such as Al or Ag.
  • Semiconductor component includes a plurality of optoelectronic semiconductor chips also different types.
  • the optoelectronic semiconductor component can also be used
  • Optoelectronic semiconductor chips comprise, which generate in operation electromagnetic radiation in mutually different spectral ranges.
  • the optoelectronic component comprises
  • Semiconductor component at least one electrical connection point for contacting the optoelectronic semiconductor chip.
  • the electrical connection point is located on an outer side of the optoelectronic semiconductor component and is thus accessible and contactable from the outside.
  • the electric Connection point is formed with an electrically conductive material and electrically conductively connected to the n-side or the p-side of the associated optoelectronic semiconductor chip. During operation of the optoelectronic semiconductor chip, it is then contacted via the electrical connection point on the n-side or p-side.
  • the electrical connection point covers the optoelectronic semiconductor chip on its underside at least in places. That is, the electric
  • Optoelectronic semiconductor chips for example, with the carrier of the semiconductor chip or the epitaxial layers of the semiconductor chip, are in direct contact.
  • the electrical connection point can be used as a layer
  • the electrical connection point covers at least 10% of the bottom surface of the optoelectronic
  • connection point in the semiconductor chip particularly evenly that is, the optoelectronic semiconductor chip is particularly uniformly energized over its surface and the electrical connection point can be particularly efficient dissipation of the heat generated during operation of the optoelectronic semiconductor chip.
  • the electrical connection point comprises a contact layer which corresponds to the optoelectronic component
  • the contact layer is selected such that it is particularly good at the optoelectronic
  • Semiconductor chip adheres. Furthermore, it is selected such that it remains chemically and mechanically stable even at elevated temperatures, such as occur during a soldering process, so that no liquefaction of the contact layer takes place and no solid-state diffusion processes of material of the contact layer into the optoelectronic semiconductor chip take place within the manufacturing tolerance.
  • the contact layer borders on a component of the optoelectronic semiconductor chip which is formed with silicon or germanium or at least one of these
  • the contact layer may then contain in particular aluminum or consist of aluminum.
  • the contact layer may then contain in particular aluminum or consist of aluminum.
  • the contact layer may also be reflective for in
  • the electrical connection point comprises at least one barrier layer which is located at one of the
  • the barrier layer is formed from materials which are selected such that they are substantially only to form adhesion with the
  • the barrier layer is formed, for example, with the following materials, that is, it may consist of at least one of the materials, or at least one of the materials contain: Ti, W, TiW, TiN, TiWN, WN.
  • the electrical connection point can be several
  • Barrier layers include those with the same or
  • barrier layers may be formed from each other different materials. Between the barrier layers can be formed from each other different materials. Between the barrier layers can be formed from each other different materials. Between the barrier layers can be formed from each other different materials. Between the barrier layers can be formed from each other different materials. Between the barrier layers can be formed from each other different materials. Between the barrier layers can be formed from each other different materials. Between the barrier layers can be formed from each other different materials. Between the barrier layers can be formed from each other different materials. Between the barrier layers.
  • the at least one barrier layer is such
  • the electrical connection point comprises a protective layer, which is arranged on the side of the at least one barrier layer facing away from the contact layer. at the protective layer is a terminating layer that connects the electrical connection point to its
  • the protective layer at least in places forms an outer surface of the electrical connection point.
  • the protective layer thus serves as
  • Connection layer to a connection material, with which the optoelectronic semiconductor device at the destination
  • the protective layer is selected in terms of its material so that it reacts with an adjacent layer of the electrical connection point, so that to this
  • Layer is a particularly good adhesion is received and it is stable against degradation processes, which facilitates the storage of the optoelectronic semiconductor device prior to its attachment at the destination.
  • the optoelectronic semiconductor device prior to its attachment at the destination.
  • Protective layer to be formed with gold or made of gold. The reaction of the protective layer with a
  • Material of the adjacent layer can diffuse through the protective layer.
  • such a penetration of the protective layer with the material of adjacent layers does not occur.
  • the optoelectronic component comprises
  • Semiconductor component an optoelectronic semiconductor chip and a first connection point for contacting the
  • the electrical connection point at least partially covers the optoelectronic semiconductor chip on the underside
  • the electrical connection point comprises a contact layer, which faces the optoelectronic semiconductor chip
  • the electrical connection point comprises at least one barrier layer, which is arranged on a side facing away from the optoelectronic semiconductor chip side of the contact layer
  • the electrical connection point comprises a protective layer on the side facing away from the contact layer at least one barrier layer is arranged.
  • the optoelectronic semiconductor device for example, for a soldering process, in particular a reflow soldering process on
  • the optoelectronic semiconductor device described above is based inter alia on the idea that the electrical connection point can be used for this separation, which is supplemented by corresponding functional layers.
  • Layer comprises using a thickness, in particular electrodeposited metal layer, for example made of copper or nickel, which only slowly with the
  • RTSH Resistance to Soldering Heat
  • the electrical connection point is therefore designed in particular as a layer stack, the layers of the
  • connection point along a stacking direction are arranged one above the other, wherein the stacking direction is in particular perpendicular to a main extension plane of the optoelectronic semiconductor chip.
  • the electrical connection point largely or completely covers the semiconductor chip on its underside.
  • the pad then covers, for example, at least 75% of its underside facing the semiconductor chip. It is even possible that the connection point projects beyond the semiconductor chip and thus has a base area which is equal to or greater than the surface area of the underside of the semiconductor chip.
  • Optoelectronic semiconductor device for a reliable connectivity, in particular solderability of the
  • Optoelectronic semiconductor device at the destination whereby the optoelectronic semiconductor device is particularly reliable in operation.
  • At least the barrier layers or the entire electrical connection point are exclusively by means of physical vapor deposition
  • Connection point are by means of physical
  • the layers can over Methods such as thermal evaporation,
  • the electrical connection point is in particular free of galvanic generated
  • PVD Physical Vapor Deposition
  • the optoelectronic component comprises
  • the optoelectronic semiconductor chip is formed by the shaped body
  • the optoelectronic semiconductor chip may indirectly or directly adjoin the shaped body.
  • Lateral directions are those directions that are to a main plane of the optoelectronic
  • Semiconductor chips and / or the semiconductor device run parallel.
  • the lateral directions run to one
  • the molding may comprise a matrix material formed with a plastic such as silicone, epoxy or a silicone-epoxy hybrid material. Reflecting and / or absorbing and / or scattering particles can be introduced into the matrix material, which electromagnetic radiation occurring, in particular light,
  • the shaped body may be formed colored and / or reflective and / or absorbent.
  • the shaped body can be flush or essentially flush with the optoelectronic semiconductor chip, at least at the underside of the optoelectronic semiconductor chip facing the electrical connection point. Furthermore, it is possible for the optoelectronic semiconductor chip and the molded body to terminate flush or essentially flush with one another on the upper side facing away from the underside. in the Substantially flush here and below means that the optoelectronic semiconductor chip projects beyond the molded body only at a height or is surmounted by the molded body only at a height which is at most 15% of the thickness of the molded body
  • the electrical connection point may extend from the semiconductor chip in lateral directions at least in places to the shaped body, so that it partially covers the shaped body at its underside. It is possible that the
  • electrical connection point extends without interruption from a region in which it covers the optoelectronic semiconductor chip to a region in which they
  • an electrical connection point which is produced by a PVD method, can be divided into areas
  • the contact layer of the electrical connection point is selected such that it also has a particularly good adhesion to the material of the molded body.
  • aluminum presents itself as
  • the electrical connector According to at least one embodiment of the optoelectronic semiconductor component, the electrical connector
  • optoelectronic semiconductor chip and / or the shaped body. Due to the direct contact of the electrical connection point, which is mediated in particular by the contact layer of the electrical connection point, for optoelectronic
  • Semiconductor chip and with the molding is in direct contact, such that the contact layer directly adjacent to both components and extending in lateral directions from the semiconductor chip to the molding. It is particularly advantageous if the shaped body and the
  • the electrical connection point has two, in particular three or more, pairs of the barrier layer and an intermediate layer, which adjoin one another directly and which are stacked one above the other between the contact layer and the protective layer. That is, the electrical connection point comprises at least three
  • Barrier layers which may be formed identically, for example. On the side facing away from the contact layer of each barrier layer can each have a
  • the intermediate layer can be formed with materials such as Pt, Ni, NiV or Au or consist of one of these materials.
  • the specified layers can each adjoin one another directly and the connection point can be free of other, not listed layers and thus consist of the specified layers.
  • the stack of pairs is the
  • This compressive stress can be achieved by the choice of materials and the layer thicknesses and / or the choice of the parameters of the deposition processes used to produce the layers, as exemplified in the examples above.
  • a Tensile stress of the electrical connection to be avoided. In the event of a mechanical damage to the electrical connection point at one point, the defect generated thereby is as it were closed by the compressive stress or at least can not break further.
  • the electrical connection point has a thickness of at least 250 nm and at most 2000 nm. This is particularly possible because the electrical
  • Connection point is made exclusively by means of a PVD process, that is, all layers of
  • PVD layers are electrical connection points. This also applies to the intermediate layers, which may be arranged in the stack of pairs of barrier layers and the intermediate layers.
  • the optoelectronic component comprises
  • Semiconductor component at least one additional electrical
  • connection point is formed.
  • the further electrical connection point can also be connected to the underside of the associated optoelectronic
  • the optoelectronic semiconductor chip is concerned for example, a flip chip, which in itself
  • Semiconductor component comprises a via, which extends in places through the molded body and which is electrically connected to the optoelectronic semiconductor chip.
  • the further electrical connection point can then at least in places or the through-hole on its underside
  • connection point and the further electrical connection point on a lower side of the optoelectronic semiconductor device arranged in lateral directions spaced from each other, so that the optoelectronic semiconductor device is surface mountable via these two electrical connection points.
  • the additional electrical connection point can be in direct contact with the through-connection and / or the molded body in places.
  • the optoelectronic arrangement comprises at least one
  • Optoelectronic semiconductor device as described here. That is, all for the optoelectronic
  • the optoelectronic device further comprises a
  • Connection carrier which is for example a
  • PCB can act. That at least one
  • Optoelectronic semiconductor device is mechanically attached to the at least one connection carrier and electrically conductively connected, for which purpose between the connection carrier and the optoelectronic semiconductor device, a connecting material is arranged, wherein the connecting material in
  • connection point and optionally the other electrical connection point is located.
  • the bonding material is, for example, a solder material, such as a solder paste.
  • An optoelectronic semiconductor device described here can be used to form the optoelectronic device
  • PCB can be connected without it to one
  • an optoelectronic semiconductor component described here can be produced so that all features disclosed for the optoelectronic semiconductor component are also disclosed for the method and vice versa.
  • At least the barrier layers or the entire electrical connection point of the optoelectronic semiconductor component are exclusively by means of a physical
  • the contact layer, the barrier layer, the Interlayer, the protective layer are produced by a PVD process. It can for the production
  • the further electrical connection point is produced exclusively by means of physical vapor deposition.
  • the additional electrical connection point can be in the
  • FIG. 1 shows an exemplary embodiment of one here
  • the optoelectronic semiconductor component 1 comprises an optoelectronic semiconductor chip 11. In the
  • a light-emitting diode chip for example, a light-emitting diode chip.
  • Optoelectronic semiconductor chip 11 includes a chip carrier 110 and epitaxial layers 111.
  • the chip carrier 110 is electrically conductive in the present case.
  • the chip carrier 110 in the present case is not a growth substrate, but rather a carrier body for the epitaxial layers 111, which was connected to the epitaxial layers 111 before or after detachment of the growth substrate.
  • the carrier 110 is formed, for example, with silicon or germanium.
  • the optoelectronic semiconductor chip is laterally in
  • Shaped body 12 may, for example, with a
  • Plastic material may be formed as a matrix material, which is filled with scattering or reflective particles, so that the shaped body 12 is reflective for electromagnetic radiation generated in the optoelectronic semiconductor chip 11.
  • the molded body 12 and the optoelectronic semiconductor chip 11 are flush on the underside of the optoelectronic semiconductor chip 11
  • the electrical connection point 13a here comprises a contact layer 131, a
  • connection point 13a All layers of the connection point 13a are in this case generated by a PVD method.
  • the connection point 13a is generated by a PVD method.
  • the barrier layers 132a are each formed with Ti, the intermediate layers 132b are each formed with Pt.
  • the barrier layers 132a have, for example, a thickness of 80 nm, and the intermediate layers 132b each have a thickness of 30 nm.
  • the pad 13a is surrounded by the protective layer 133 formed, for example, with gold and having a thickness of about 50 nm to 100 nm,
  • Semiconductor device is about the connecting material 2, the is formed for example with a solder paste, with the
  • Connection carrier 3 which is for example a
  • the optoelectronic semiconductor component 1 in this specification is the optoelectronic semiconductor component 1 in this specification.
  • Embodiment of Figure 2 again shows a
  • Through hole 14 which is formed with an electrically conductive material.
  • the plated-through hole 14 is electrically conductively connected to the semiconductor chip 11 at the top side of the optoelectronic semiconductor component 1 via the contact element 15, which is formed for example as a metal layer.
  • the contact element 15 is formed for example as a metal layer.
  • Semiconductor device 1 is laterally spaced from the
  • the further electrical connection point 13b is located with the Through-hole and the adjacent shaped body 12, for example, in direct contact.
  • junction 13b can be as indicated above
  • Both electrical connection points 13a, 13b are connected via a connecting material 2, for example a
  • connection carrier 3 for example, a circuit board, mechanically and electrically connected, so that the optoelectronic semiconductor device 1 on the
  • Connection carrier 3 is surface mounted.
  • Embodiment of Figure 2 is not on the underside of the molding 12, but is only in the region of
  • Shaped body 12 extends.
  • electrical connection point 13b are each made by a PVD process.
  • the invention is not by the description based on the

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif semi-conducteur optoélectronique qui comprend un point de connexion électrique (13a). Le point de connexion électrique (13a) comprend une couche de contact (131) qui est tournée vers la puce semi-conductrice optoélectronique (11), le point de connexion électrique (13a) comporte au moins une couche de barrière (132a) qui est disposée du côté de la couche de contact (131) qui est à l'opposé de la puce à semi-conducteur optoélectronique (11) et le point de connexion électrique (13a) comporte une couche protectrice (133) qui est disposée du côté de la ou des couches de barrière (132a, 32b) qui est à l'opposé de ladite couche de contact (131).
PCT/EP2016/050386 2015-01-26 2016-01-11 Composant semi-conducteur optoélectronique, dispositif optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique WO2016120047A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112016000474.5T DE112016000474A5 (de) 2015-01-26 2016-01-11 Optoelektronisches halbleiterbauteil, optoelektronische anordnung und verfahren zur herstellung eines optoelektronischen halbleiterbauteils
US15/544,288 US10283686B2 (en) 2015-01-26 2016-01-11 Optoelectronic semiconductor component, optoelectronic arrangement and method of producing an optoelectronic semiconductor component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015101070.4 2015-01-26
DE102015101070.4A DE102015101070A1 (de) 2015-01-26 2015-01-26 Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils

Publications (1)

Publication Number Publication Date
WO2016120047A1 true WO2016120047A1 (fr) 2016-08-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2016/050386 WO2016120047A1 (fr) 2015-01-26 2016-01-11 Composant semi-conducteur optoélectronique, dispositif optoélectronique et procédé de fabrication d'un composant semi-conducteur optoélectronique

Country Status (3)

Country Link
US (1) US10283686B2 (fr)
DE (2) DE102015101070A1 (fr)
WO (1) WO2016120047A1 (fr)

Cited By (1)

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US10290784B2 (en) 2015-05-21 2019-05-14 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component

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DE102017113407A1 (de) * 2017-06-19 2018-12-20 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips und ein Verfahren zur Herstellung einer strahlungsemittierenden Anordnung
US11469138B2 (en) * 2018-05-04 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Via for coupling attached component upper electrode to substrate
CN114188452B (zh) * 2021-11-19 2023-05-12 重庆康佳光电技术研究院有限公司 一种发光芯片及其制备方法

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US20090218588A1 (en) * 2007-12-06 2009-09-03 Paul Panaccione Chip-scale packaged light-emitting devices
US20130302979A1 (en) * 2010-04-05 2013-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device including through silicon plugs
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US8610161B2 (en) * 2010-10-28 2013-12-17 Tsmc Solid State Lighting Ltd. Light emitting diode optical emitter with transparent electrical connectors
DE102012215524A1 (de) 2012-08-31 2014-03-06 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
CN104584208B (zh) * 2012-12-21 2018-01-30 松下知识产权经营株式会社 电子部件封装以及其制造方法
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US20090085052A1 (en) * 2007-09-27 2009-04-02 Samsung Electro-Mechanics Co., Ltd. Gan type light emitting diode device and method of manufacturing the same
US20090218588A1 (en) * 2007-12-06 2009-09-03 Paul Panaccione Chip-scale packaged light-emitting devices
US20130302979A1 (en) * 2010-04-05 2013-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device including through silicon plugs
JP2013243254A (ja) * 2012-05-21 2013-12-05 Nichia Chem Ind Ltd 半導体発光素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10290784B2 (en) 2015-05-21 2019-05-14 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component

Also Published As

Publication number Publication date
DE102015101070A1 (de) 2016-07-28
US10283686B2 (en) 2019-05-07
DE112016000474A5 (de) 2017-10-05
US20180013043A1 (en) 2018-01-11

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