WO2016110244A1 - 一种单芯片具有校准/重置线圈的z轴线性磁电阻传感器 - Google Patents

一种单芯片具有校准/重置线圈的z轴线性磁电阻传感器 Download PDF

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WO2016110244A1
WO2016110244A1 PCT/CN2016/070137 CN2016070137W WO2016110244A1 WO 2016110244 A1 WO2016110244 A1 WO 2016110244A1 CN 2016070137 W CN2016070137 W CN 2016070137W WO 2016110244 A1 WO2016110244 A1 WO 2016110244A1
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calibration
sensing unit
coil
axis
magnetoresistive
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PCT/CN2016/070137
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English (en)
French (fr)
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迪克詹姆斯·G
周志敏
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江苏多维科技有限公司
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Application filed by 江苏多维科技有限公司 filed Critical 江苏多维科技有限公司
Priority to EP16734904.2A priority Critical patent/EP3244226B1/en
Priority to US15/542,324 priority patent/US10228426B2/en
Priority to JP2017535878A priority patent/JP6687627B2/ja
Publication of WO2016110244A1 publication Critical patent/WO2016110244A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0005—Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206—Three-component magnetometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Definitions

  • the present invention relates to the field of magnetic sensors, and more particularly to a Z-axis magnetic resistance sensor having a calibration/reset coil on a single chip.
  • the tunnel junction magnetoresistance (MTJ) sensor has the advantages of high sensitivity, small size, low cost and low power consumption. Although the MTJ sensor is compatible with semiconductor standard manufacturing processes and has high magnetoresistance performance, the method of preparing high performance MTJ linear magnetic field sensor has not been fully developed, especially the problems of temperature characteristics and hysteresis are not easily obtained. control
  • the magnetic field sensor consists of a single magnetoresistive element.
  • the magnetoresistive element is generally connected to a Wheatstone bridge to eliminate the offset, increase the sensitivity and compensate the temperature characteristics.
  • the bridge construction can compensate for the temperature characteristics, the dependence of the magnetic properties of the magnetic resistance of the sensor on the temperature is not completely suppressed.
  • calibration sensitivity is necessary during operation, and a chip-level calibration coil produces a magnetic field in the sensor's sensitive direction for this purpose.
  • the magnetoresistive sensor is composed of ferromagnetic sensing elements, the output curve is mainly nonlinear, and the hysteresis is generated due to the generation of domain walls of the sensing element and other parts (for example, a magnetic shielding layer or a magnetic collecting layer). motion.
  • a high performance magnetoresistive sensor generally requires another coil to provide a periodic saturation field to the sensing element and eliminate magnetic domains, referred to as a reset coil.
  • a single-chip Z-axis magnetoresistive sensor for measuring an external magnetic field in the Z direction, that is, perpendicular to the substrate direction
  • the single chip Z-axis magnetoresistive sensor includes a substrate 1 and a plurality of elongated soft magnetic flux concentrators 2 on the substrate 1 having a Y-axis direction in the longitudinal direction, an X-axis direction in the width direction, and an upper surface or a lower surface of the soft magnetic flux concentrator 2
  • Magnetoresistive sensing cell arrays 4 and 5 which are arranged in the Y-axis direction as a magneto-resistance cell string 4 and a magnetizing resistor cell string 5, respectively located at the Y-axis center of the soft magnetic flux concentrator 2
  • the two sides of the line 3 have the same distance from the center line of the Y-axis, and the magneto-resistance unit string 4 and the magnetizing resistor unit string 5 are electrically connected into a push-pul
  • the soft magnetic flux concentrator 2 twists the Z-direction magnetic field into two opposite and amplitudes having X and -X axial magnetic field components.
  • the same sensitive magnetic field acts on the magnetoresistive resistor string 4 and the magnetizing resistor string 5 to form a push-pull magnetoresistive sensor.
  • FIG. 2 is a cross-sectional view of the single-chip Z-axis magnetoresistive sensor. It can be seen that the magneto-resistance sensing unit string 4 and the magnetizing resistor sensing unit string 5 are located on the substrate 1, and the soft magnetic flux concentrator 2 is located. Pushing the magnetoresistive sensing unit string 4 and the magnetizing resistor sensing unit string 5, in addition, further comprising an electrode 6 and insulating layers 7 and 8 between the layers for isolating the electrodes of the magnetoresistive sensing unit and The isolated magnetoresistive sensing units 4, 5 and the soft magnetic flux concentrators 2, 9 are protective layers for protecting the entire device.
  • the magnetoresistive sensing cell strings 4 and 5 in the single-chip Z-axis magnetoresistive sensor shown in FIGS. 1 and 2 are TMR magnetoresistive sensing units, including a free layer, a pinning layer, and an intermediate barrier layer, and a free layer thereof.
  • the initial magnetization direction is the Y-axis direction
  • the magnetization direction of the pinning layer, that is, the magnetic field sensitive direction is the X-axis direction.
  • the single-chip Z-axis magnetoresistive sensor described above can measure the external magnetic field component from the Z-axis, but has the following problems:
  • the present invention provides a Z-axis magnetoresistive sensor having a calibration/reset coil on a single chip.
  • a calibration coil is introduced on the chip. Resetting the coil, by passing an appropriate current in the calibration coil, generating a current magnetic field of the same magnitude in the X and -X directions at the positions of the push magnetoresistive sensing unit string and the magnetizing resistance sensing unit string, respectively, and realizing the passing current Adjusting the precise adjustment of the size of the magnetic field. Since the calibration coil is located on the Z-axis sensor chip, it is only necessary to apply current through the probe. Measurements are made in a way that increases the efficiency of the measurement and ensures the accuracy of the measurement.
  • a single-chip Z-axis magnetoresistive sensor having a calibration/reset coil comprising a single-chip Z-axis magnetoresistive sensor, and a calibration coil or/and a reset coil, the single-chip Z-axis linearity
  • the magnetoresistive sensor includes a soft magnetic flux concentrator that twists a Z-direction magnetic field into two opposite and identical magnetic fields having the X and -X axial magnetic field components, and an array including a plurality of magnetoresistive units, the plurality of magnetic The resistance unit forms a string of a magnetoresistive sensing unit and a string of a magnetoresistive sensing unit.
  • the calibration coil/reset coil respectively includes a straight wire parallel to the pinning layer/free layer magnetization direction of the magnetoresistive sensing unit of the single chip Z-axis linear resistance sensor,
  • the calibration coil generates an equivalent/reverse pinning layer direction and an equivalent calibration magnetic field at the push/pull magnetoresistive sensing unit string of the single chip Z-axis magnetoresistive sensor, the reset coil being in the single A uniform resetting magnetic field along the magnetization direction of the free layer is generated at all of the magnetoresistive sensing units of the chip Z-axis magnetoresistive sensor.
  • the calibration coil is a planar calibration coil, and the straight wire of the planar calibration coil is in one-to-one correspondence with the series of the magnetoresistive resistance sensing unit and the magnetizing resistance sensing unit, and is respectively located on the Y-axis of the soft magnetic flux concentrator a line of the magneto-resistance sensing unit of the center line and the same side of the string of the magnetizing resistance sensing unit, and a straight wire corresponding to the string of the magnetizing resistance sensing unit and the magnetizing resistance sensing unit
  • the straight wires corresponding to the strings have currents in opposite directions.
  • the distance between the straight wire of the planar calibration coil and the Y-axis center line of the soft magnetic flux concentrator is 0 ⁇ (1/2*Lx+1/2*Lgap), where Lx is the width of the flux concentrator Lgap is the width of the gap between the flux concentrators.
  • the planar coil is located on the substrate of the single-chip Z-axis linear resistance sensor and the magnetoresistive sensing unit Below, between the magnetoresistive sensing unit and the soft magnetic flux concentrator, above the soft magnetic flux concentrator.
  • the planar coil is located at the single-chip Z-axis linear resistance Under the magnetoresistive sensing unit above the substrate of the sensor, between the magnetoresistive sensing unit and the soft magnetic flux concentrator, The gap between the soft magnetic flux concentrators.
  • the calibration coil is a three-dimensional calibration coil wound around a soft magnetic flux concentrator and a magnetoresistive sensing unit.
  • the three-dimensional calibration coil includes a plurality of three-dimensional calibration sub-coils connected in series, and each of the soft magnetic flux concentrators, the magnetoresistive resistance sensing unit strings, and the magnetoresistive resistance sensing unit strings respectively correspond to one of the three-dimensional calibrators.
  • the three-dimensional calibration sub-coil includes a first set of straight wires and a second set of straight wires parallel to a Y-axis centerline of the soft magnetic flux concentrator, the first set of straight wires and the second set of straight wires being symmetrically distributed in corresponding
  • the first group/second group of straight wires includes two straight wires, and the two straight wires of the first group/second group of straight wires are respectively located at the two sides of the Y-axis center line of the soft magnetic flux concentrator a straight line of the first set of straight wires and a straight line of the second set of straight wires are symmetric with respect to the Y axis on the surface of the soft magnetic flux concentrator or the push magnetoresistive sensing unit string and the magnetoresistive sensing unit string
  • the center line is distributed in a region between the push and pull magnetoresistive sensing unit strings, and the other straight wire of the first set of straight wires and the other straight wire of the second set of straight wires are symmetrically distributed on the
  • the two three-dimensional solenoids have opposite winding directions and are connected in series with each other, wherein one of the three-dimensional solenoids generates a magnetic field parallel to the X direction, and the other three-dimensional solenoid generates a magnetic field in the -X direction.
  • the reset coil is a planar reset coil, and the planar reset coil includes a plurality of straight wires connected in series perpendicular to a Y-axis center line of the soft magnetic flux concentrator, wherein the straight wires are located at the Z axis
  • the sensor is directly above or below the row of magnetoresistance elements along the X-axis and has the same current direction.
  • the reset coil is a three-dimensional reset coil
  • the three-dimensional reset coil includes a plurality of first straight wires and a second group of straight lines parallel to the rows of magnetoresistance elements of the magnetoresistive sensing unit array along the X-axis direction a wire, the first set of straight wires and the second set of straight wires are respectively located on surfaces of the soft magnetic flux concentrator and the magnetoresistive unit, and the first set of straight wires and the second set of straight wires have opposite current directions, And connected into a spiral coil.
  • the reset coil and the calibration coil are high conductivity materials such as Cu, Au, and Ag.
  • the reset coil/calibration coil and the single-chip Z-axis magnetoresistive sensor are separated by an insulating material, which is SiO 2 , Al 2 O 3 , Si 3 N 4 , polyimide or photolithography. gum.
  • the calibration coil includes a positive port and a negative port.
  • the magnitude of the generated calibration magnetic field is within the linear working region of the series of magnetoresistive sensing unit strings and the magnetoresistive sensing unit strings.
  • the current of the calibration coil can be set to a current value or a plurality of current values.
  • the reset coil includes two ports, and the magnitude of the reset magnetic field is higher than a saturation magnetic field value of the free layer.
  • the current in the reset coil is a pulse current or a direct current.
  • Figure 1 is a structural diagram of a single-chip Z-axis magnetoresistive linear sensor
  • FIG. 2 is a cross-sectional view of a single-chip Z-axis magnetoresistive linear sensor
  • Figure 3 shows the plane calibration coil pattern one
  • Figure 4 shows the plane calibration coil pattern two
  • Figure 5 shows the position of the planar calibration coil
  • Figure 6 shows the plane calibration coil position two
  • Figure 7 shows the plane calibration coil position three
  • Figure 8 shows the plane calibration coil position four
  • Figure 9 is a magnetic force line distribution diagram of a planar calibration coil on a single-chip Z-axis magnetoresistive sensor
  • Figure 10 is an X-direction magnetic field distribution diagram of the plane calibration coil at the position of the magnetoresistive sensing unit
  • Figure 11 is a second diagram of the magnetic field line distribution of the planar calibration coil on the single-chip Z-axis magnetoresistive sensor
  • Figure 12 is a diagram showing the X-direction magnetic field distribution of the plane calibration coil at the position of the magnetoresistive sensing unit
  • Figure 13 is a diagram showing the distribution of magnetic lines of a planar calibration coil on a single-chip Z-axis magnetoresistive sensor
  • Figure 14 is a diagram showing the X-direction magnetic field distribution of the plane calibration coil at the position of the magnetoresistive sensing unit
  • Figure 15 is a structural diagram of a three-dimensional calibration coil
  • Figure 16 is a cross-sectional view of a three-dimensional calibration coil
  • 17 is a magnetic line distribution diagram of a three-dimensional calibration coil on a single-chip Z-axis magnetoresistive sensor
  • Figure 18 is an X-direction magnetic field distribution diagram of the three-dimensional calibration coil at the position of the magnetoresistive sensing unit
  • Figure 19 is a structural diagram of a planar reset coil
  • Figure 20 shows a cross-sectional position of the plane reset coil diagram 1
  • Figure 21 shows the cross-sectional position of the plane reset coil Figure 2
  • Figure 22 shows a cross-sectional position of the plane reset coil diagram 3
  • 23 is a magnetic line distribution diagram of a planar reset coil on a single-chip Z-axis magnetoresistive sensor
  • Figure 24 is a Y-direction magnetic field distribution diagram of the plane reset coil at the position of the magnetoresistive sensing unit
  • Figure 25 is a structural diagram of a three-dimensional reset coil
  • Figure 26 is a cross-sectional view of a three-dimensional reset coil
  • 27 is a magnetic line distribution diagram of a three-dimensional reset coil on a single-chip Z-axis magnetoresistive sensor
  • FIG. 28 is a Y-direction magnetic field distribution diagram of a three-dimensional reset coil at a position of a magnetoresistive sensing unit
  • Figure 29 shows a cross-sectional view 1 of the reset coil and the calibration coil on the single-chip Z-axis magnetoresistive sensor
  • Figure 30 shows a cross-sectional view 2 of the reset coil and the calibration coil on the single-chip Z-axis magnetoresistive sensor
  • Figure 31 shows a cross-sectional view of the reset coil and the calibration coil on a single-chip Z-axis magnetoresistive sensor.
  • planar calibration coils 101 and 102 are two structural distribution diagrams of the planar calibration coils 101 and 102 on the single-chip Z-axis magnetoresistive sensor, respectively.
  • the planar calibration coils 101 and 102 include a plurality of straight wires 10 and 11, 12 and 13 parallel to the Y-axis centerline 3 of the soft magnetic flux concentrator, the straight wires 10 and 11, 12 and 13 being located in the soft Two sides of the Y-axis center line 3 of the magnetic flux concentrator, wherein 10 and 12 are in one-to-one correspondence with the magneto-resistance sensing unit string 4, and the straight wires 11 and 13 and the magnetizing resistance sensing unit string 5 The same side and one-to-one correspondence; and the straight wire 10 corresponding to the magnetoresistive resistance sensing cell string 4 in FIG.
  • the Y-axis center line 3 has the same distance
  • the straight wire 12 corresponding to the magnetoresistive resistance sensing cell string 4 in FIG. 4 and the straight wire 13 corresponding to the magnetizing resistance sensing cell string 5 also have the same distance.
  • All of the straight wires on the same side of the Y-axis centerline of the soft magnetic flux concentrator have the same current direction, and the straight wires on both sides have opposite current directions.
  • the straight wire 10 and the straight wire 11 have opposite current directions.
  • the distance between all the straight wires and the Y-axis center line is 0 to (1/2*Lx+1/2*Lgap). Further, all the straight wires may be located in the region where the soft magnetic flux is concentrated, that is, the distance between all the straight wires and the Y-axis center line is 0 to 1/2*Lx, that is, between 3 and 31, 3 and 33. region.
  • the straight wires 10 and 11 are directly above or directly below the string of the magnetoresistive sensing unit string 4 and the magnetizing resistor sensing unit.
  • the straight wire in the planar calibration coil corresponding to FIG. 4 is located at a gap between the soft magnetic flux concentrators, that is, the distance between the straight wire and the Y-axis center line is 1/2*Lx ⁇ (1/ 2*Lx+1/2*Lgap), as shown in Fig. 4, straight wires 12 and 13 are located at the gaps on both sides of the flux concentrator, i.e., between 31 and 32, 33 and 34.
  • planar calibration coils 101 and 102 are cross-sectional views of possible positions of the planar calibration coils 101 and 102 on the single-chip Z-axis magnetoresistive sensor, respectively.
  • the planar calibration coil 101 may be located on the substrate 1 shown in FIG.
  • the push-up and pull-up resistance sensing unit strings 4 and 5 between the push and pull magnetoresistive sensing unit strings 4 and 5 and the soft magnetic flux concentrator 2 shown in FIG. 6, and the softness shown in FIG.
  • insulating layers 81, 82 and 83 are introduced to electrically isolate the planar alignment coil 101 from the surrounding layers.
  • the distance between the straight wire of the plane calibration coil 102 shown in FIG. 4 and the center line of the Y axis is 1/2*Lx ⁇ (1/2*Lx+1/2*Lgap), except that it can also be located in FIG. 5 .
  • the substrate 1 is shown as being pushed between the magnetoresistive sensing cell strings 4 and 5, between the push and pull magnetoresistive sensing cell strings 4 and 5 and the soft magnetic flux concentrator 2 shown in FIG. In addition to the two cases, it is also possible to locate the gap between the push and pull magnetoresistive sensing unit strings and the soft magnetic flux concentrators 2 and 2' as shown in FIG.
  • FIG. 9 and FIG. 10 are magnetic field lines distributed on the single-chip Z-axis magnetoresistive sensor of the magnetic field generated by the planar calibration coil 102 shown in FIG. 4, respectively, and the magnetic resistance sensing unit string and the magnetoresistive resistance sensing. The distribution of magnetic field components along the X direction at the position of the string.
  • the straight wire is located at a gap between two adjacent soft magnetic flux concentrators 2, and the straight wires located at the magneto-resistance sensing unit string 4 and the magnetizing resistance sensing unit string 5 respectively generate two reverse rings
  • a magnetic circle is distributed, and the magnetic coil passes through the soft magnetic flux concentrator 2 to reach the position of the magneto-sensitive resistance sensing unit string 4 and the magnetizing resistance sensing unit string 5, wherein n1-n5 respectively correspond to the respective soft magnetic flux concentrators 2
  • the center position, m1-m10 corresponds to the position of each of the magnetoresistive sensor unit string and the magnetizing resistance sensing unit string.
  • the X-direction magnetic field component at the intermediate position of the flux concentrator 2, i.e., the position of n-n5, is 0, and the magnetoresistive sensing unit string 4 and the magnetic field are located on the surface of the flux concentrator 2.
  • the resistance sensing unit string 5 has opposite X-direction magnetic field components, that is, m1 with respect to m2, m3 with respect to m4, m5 with respect to m6, m7 with respect to m8, m9 with respect to m10 being of the same size and opposite directions.
  • FIG. 11 and FIG. 12, FIG. 13 and FIG. 14 are respectively the plane calibration coil 101 shown in FIG. 3 below the surface of the magnetoresistive sensing unit string 4 and the magnetizing resistance sensing unit string 5, and at the The distribution of magnetic lines of force generated above the surface of the soft magnetic flux concentrator 2 and the magnetic field of the X direction at the position of the sensor The distribution of quantities.
  • the plane calibration coil 101 is located directly below the magneto-resistance sensing unit string 2 and the magnetizing resistance sensing unit string 4, and n11-n15 are respectively the center positions of the soft magnetic flux concentrator 2, m11 -m20 is a push magnet resistance sensing unit string and a magnetizing resistance sensing unit string respectively.
  • the X magnetic field component of n11-n15 is 0 in the position parallel to the X direction at the position of the magnetoresistive sensing unit.
  • the magnetoresistive sensing unit m11 and the magnetizing resistance sensing unit m12, m13 and m14, m15 and m16, m17 and m18, m19 and m20 have X magnetic field components of the same magnitude and opposite directions.
  • the plane calibration coil 101 is located above the surface position of the soft magnetic flux concentrator 2 and corresponds to the magnetoresistive resistance sensing unit string 4 and the magnetizing resistance sensing unit string 5, respectively, n21-25 being the soft magnetic flux concentrator 2, respectively.
  • the center position, m21-25 is the magneto-resistance sensing unit string and the magnetizing resistance sensing unit string.
  • the magnetoresistive sensing unit string position, the X-magnetic field component at n21-n25 is 0, and the magnetizing resistance Unit 4 and magnetizing resistor unit 5, i.e.
  • the planar calibration coil can realize the reverse direction of the magneto-resistance sensing unit string and the magneto-resistance sensing unit string by adjusting the current, and the like, so that the external magnetic field can be replaced, and the single-chip can be realized. Calibration of the Z-axis magnetoresistive sensor.
  • Figure 15 is a structural view of the three-dimensional calibration coil 103. It can be seen that there is a three-dimensional calibration sub-coil corresponding to a push magnetoresistive sensing unit string 5 and a magnetizing resistor sensing unit string 4 and a soft magnetic flux 2 located on the surface thereof. And each of the three-dimensional calibration sub-coils are connected in series.
  • Each of the three-dimensional coils includes a first set of straight wires and a second set of straight wires parallel to the Y-axis centerline 3 of the soft magnetic flux concentrator, the first set of straight wires and the second set of straight wires being symmetrically distributed correspondingly
  • the soft magnetic flux concentrator has two sides on the Y-axis center line 3, the straight wires 14, 16 constitute a first group of straight wires, and the straight wires 15, 17 constitute a second group of straight wires, wherein the straight wires 14 and 15 are located in the soft magnetic flux concentrator On the surface of the push/pull magnetoresistive sensing unit string and located between the field of the magnetoresistive sensing unit string 5 and the magnetizing resistor sensing unit string 4, and symmetric with respect to the Y-axis center line 3;
  • Straight wires 16 and 17 are located on the surface of the push/pull magnetoresistive sensing unit string/soft flux concentrator. And located outside the push magnetoresistive sensing unit string 5 and the magnetizing resistor sensing unit string 4, and symmetric with respect to the Y-axis center line 3.
  • the two sets of straight wires on both sides of the Y-axis center line 3 each form a spiral coil and are connected in series and have opposite winding directions, so that the three-dimensional calibration sub-coils are transmitted in the magnetoresistive sensing unit string 5 and the magnetizing resistor.
  • the magnetic field in the X and -X directions is generated at the sense unit string 4, respectively, and the magnitude is the same, and at the same time, due to the action of the soft magnetic flux concentrator, the current required in the coil is greatly reduced, and the power consumption is reduced.
  • 16 is a positional view of the three-dimensional calibration coil 103 on a single-chip Z-axis magnetoresistive sensing cross-sectional view, wherein the two sets of straight wires, one of the two sets of straight wires, respectively, are located at a soft magnetic flux.
  • the corresponding other straight wires 16 and 17 are located on the surface of the magneto-resistance sensing unit string 5 and the magnetizing resistance sensing unit string 4.
  • 16 and 17 are respectively symmetrically distributed with respect to the Y-axis center line, wherein 14 and 15 are distributed between the field of the magnetoresistive sensing unit string 5 and the magnetizing resistance sensing unit string 4, 16 and 17 is distributed in a region outside the push magnetoresistive sensing unit string 5 and the magnetizing resistor sensing unit string 4.
  • 14 and 16 form a solenoid
  • 15 and 17 form a solenoid
  • two solenoids are connected in series and have opposite winding directions.
  • insulating layers 84 and 85 for isolating the three-dimensional coil and other components are also included.
  • 16 is that the straight wires 14 and 15 are located on the surface of the soft magnetic flux concentrator, 16 and 17 are located on the surface of the magneto-resistance sensing unit string 5 and the magnetizing resistance sensing unit string 4, in fact, if the two are interchanged positions The same can be applied to the 3D calibration coil.
  • FIG. 17 and FIG. 18 are magnetic field line distribution diagrams of the three-dimensional calibration coil 103 on the single-chip Z-axis magnetoresistive sensor chip, and X-axis magnetic fields at the magneto-resistance sensing unit string 4 and the magnetizing resistance sensing unit string 5, respectively. Distribution. It can be seen that the three-dimensional calibration sub-coil 103 forms respective magnetic line loops around the straight wires at the flux concentrator 2 and the push and pull magnetoresistive sensing cell strings 4 and 5, and sequentially passes through the soft magnetic flux concentrator and pushes , the magnetic resistance sensing unit string. In Fig.
  • m31-m34 are the center lines of the soft magnetic flux concentrator 2, respectively, n41-n48 are the positions of the magnetoresistive resistance sensing unit string 4 and the magnetizing resistance sensing unit string 5, respectively, in Fig. 18, m31-m34
  • the X magnetic field component at the center line of the soft magnetic flux concentrator is 0, and the magnetoresistive sensing unit string 4 and the magnetizing resistance sensing unit string 5, that is, n41 with respect to n42, n43 with respect to n44, n45 with respect to n46, n47 Relative to n48, there are equal and opposite x-magnetic field components, which meet the requirements of the calibration magnetic field.
  • Figure 19 is a structural view of the planar reset coil 104, including a plurality of straight wires 18 parallel to the X-axis,
  • the straight wire 18 is perpendicular to the Y-axis center line 3, and spans the magnetoresistive sensing unit in the X direction of the magnetoresistive sensing unit on the push-resistance sensing unit string 5 and the magnetoresistive sensing unit string 4.
  • the straight wire currents are in the same direction, and the magnitude of the magnetic field component in the Y direction generated at the position of the magnetoresistive unit can be made the same in the same direction .
  • planar reset coil 104 is located above the substrate 1, pushing and pulling the magnetoresistive sensing unit strings 4 and 5, but they may also be located in the push and pull magnetoresistive sensing unit. Above the strings 4 and 5; the planar reset coil 104 in Fig. 21 is located between the soft magnetic flux concentrator 2 and the push and pull magnetoresistive sensing unit strings 4 and 5; Fig. 22 is the planar reset coil 104 is located Above the soft magnetic flux concentrator 2.
  • insulating layers 86, 87 and 88 are employed to achieve electrical insulation of the wire coils, respectively.
  • FIG. 23 is a magnetic line distribution diagram of the plane reset coil 104 in the Y direction section. It can be seen that on the surface of the soft magnetic flux concentrator 2, each straight wire generates a magnetic line loop, wherein n51-n55 are respectively located in the soft magnetic flux concentration.
  • the magnetic resistance sensing unit string or the magnetizing resistance sensing unit string on the device 2 the magnetic field component in the Y direction generated at the push and pull magnetoresistive sensing unit n51-n55 is as shown in Fig. 24, and it can be seen All the magnetoresistive sensing units are in a uniform Y-direction magnetic field with the same magnetic field amplitude and the same direction.
  • Figure 25 is a structural view of the three-dimensional reset coil 105, comprising two upper and lower sets of straight wires 19 and 20 parallel to the X-axis, the straight wires 19 and 20 being a soft magnetic flux concentrator 2 and a urging resistance sensing unit string 5 and The magnetoresistive sensing unit string 4 is wound into a solenoid structure for the magnetic core, and 19 and 20 have opposite current directions.
  • 26 is a distribution diagram of a three-dimensional reset coil 105 on a cross section of a single-chip Z-axis magnetoresistive sensor, the upper and lower two sets of straight wires 19 and 20 are respectively located on the surface of the soft magnetic flux concentrator 2, and the magnetoresistive resistance sensing
  • the cell string 4 and the magnetizing resistors sense the surface of the string 5 and are connected by means of terminals on both sides to form a loop.
  • 89 and 90 insulating layers are added to ensure electrical isolation of the three-dimensional reset coil 105.
  • FIG. 27 and FIG. 28 are respectively a soft magnetic flux concentrator and a urging resistance sensing unit string 4 and a magnetizing resistance sensing unit string 5 when the solenoids of the three-dimensional reset coil 105 are composed of the upper and lower two sets of straight wires.
  • the Y magnetic field distribution has a periodic distribution at the position of the magnetoresistive sensing unit, wherein the magnetic field components of Y at the position of n61-n65 are the same in magnitude and the same direction, so as long as the straight wires of the upper and lower layers are Arranging uniformly evenly, that is, the obtained magnetic lines of force and the Y-direction magnetic field distribution generated at the push-pull and magnetoresistive sensing unit strings 4 and 5 have periodic distribution characteristics, and in the push-resistance sensing unit and The magnetoresistive sensing unit generates the same Y-direction magnetic field at each of the magnetoresistive sensing units, so the upper and lower DC conductors may be located directly above or below the string of the push-pull and magnet-resistance sensing units, or may be located elsewhere. In the region, as long as the DC wires are evenly distributed, the magnetic fields generated at the magnetoresistive sensing unit strings are the same in magnitude and in the same direction.
  • a calibration coil or a reset coil, or both may be included.
  • the plane calibration coil and the plane reset coil may be located at the same position, such as above the substrate, under the push-pull magnetoresistive sensing unit, or by retracting and pulling the magnetoresistance. Between the sensing unit and the soft magnetic flux concentrator, or above the soft magnetic flux concentrator, it is also possible to have a free combination of any two of the above three positions.
  • the three-dimensional calibration coil and the three-dimensional reset coil there is a fixed winding method in which the soft magnetic flux concentrator and the push and pull magnetoresistive sensing unit are wound around the center.
  • the three-dimensional coil is located at a fixed position, and the planar coil is located at any one of the three types; in the case where both are three-dimensional coils, there is only one combination.
  • Fig. 29-31 For the convenience of description, only three typical combination structures of the plane calibration coil and the plane reset coil are shown in Fig. 29-31.
  • the plane calibration coil 106 and the plane reset coil 107 are simultaneously located between the substrate 1 and the magnetoresistive sensing unit strings 4 and 5; in FIG. 30, the plane calibration coil 106 is located at the push and pull magnetoresistance.
  • the planar reset coil 107 is located between the substrate 1 and the magnetoresistive sensing unit strings 4 and 5; in Fig. 31, the planar calibration coil 106 Located above the soft magnetic flux concentrator 2, the planar reset coil 107 is located between the substrate 1 and the magnetoresistive sensing cell strings 4 and 5.
  • a DC current is input into the calibration coil to generate a DC magnetic field instead of the external magnetic field.
  • the calibration method may be a predetermined DC current value, and a single-chip Z-axis magnetoresistive sensor is observed at the current value.
  • the difference between the output value and the standard value may also be the scan value of the predetermined DC current value, and the difference between the output curve of the single-chip Z-axis magnetoresistive sensor and the standard curve is observed to determine whether the chip is qualified.
  • the circuit amplitude must be passed to produce a saturation value higher than the free layer, so that the magnetization state returns to the original state, and the reset current can be a pulse or DC circuit.

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Abstract

一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，包括单芯片Z轴线性磁电阻传感器及校准线圈和/或重置线圈，所述校准线圈、重置线圈为平面或三维线圈，所述平面线圈（101,102）位于衬底之上、磁电阻传感单元之下、磁电阻传感单元和软磁通量集中器（2）之间、软磁通量集中器（2）之上或间隙处，所述三维线圈缠绕软磁通量集中器和磁电阻传感单元，所述校准线圈/重置线圈分别包括平行于钉扎层/自由层磁化方向的直导线（10,11,12,13），前者在推、挽磁电阻单元串（4,5）处产生同/反钉扎层方向的等值校准磁场；后者在所有磁电阻传感单元处产生自由层向均匀重置磁场。通过控制校准线圈/重置线圈电流可实现单芯片Z轴线形磁电阻传感器校准及磁状态重置，具有高效、快速、方便的优点。

Description

一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器 技术领域
本发明涉及磁性传感器领域，特别涉及一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器。
背景技术
隧道结磁电阻(MTJ，Magnetic Tunnel Junction)传感器具有高灵敏度，尺寸小，成本低以及功耗低等优点。尽管MTJ传感器与半导体标准制造工艺相兼容且其具有高磁电阻的性能，但是制备高性能的MTJ线性磁场传感器的方法还没有得到充分开发，特别是温度特性和磁滞的问题不容易得到有效的控制
磁场传感器由单个的磁电阻元件组成，在实际应用中一般将磁电阻元件连接成惠斯通电桥以消除偏移，增加灵敏度以及对温度特性做一定的补偿。尽管电桥构造能对温度特性做出一定的补偿，但是传感器磁电阻内禀的磁性能对温度的依赖不会得到完全抑制。对于高精度测量来说，在工作状态下校准灵敏度是必要的，且芯片级别的校准线圈沿传感器敏感方向产生一个磁场可以达到这个目的。
另外，因为磁电阻传感器是由铁磁敏感元件构成，所以输出曲线主要是非线性的，磁滞的产生是因为传感元件以及其他部分(例如磁屏蔽层或聚磁层)的畴壁的生成和运动。为了克服以上问题，高性能的磁电阻传感器通常需要另一个线圈为传感元件提供定期的饱和场且消除磁畴，称为重置线圈。
在专利201310409446.5中，公布了一种单芯片Z轴线性磁阻传感器，如图1所示，用于测量Z方向即垂直于衬底方向上的外磁场，该单芯片Z轴线性磁电阻传感器包括衬底1，以及位于衬底1上的多个长条形软磁通量集中器2，其长度方向为Y轴方向，宽度方向为X轴方向，以及位于软磁通量集中器2上表面或下表面上的磁电阻传感单元阵列4和5，所述磁电阻传感单元阵列沿Y轴方向排列成推磁电阻单元串4和挽磁电阻单元串5，分别位于软磁通量集中器2的Y轴中心线3的两侧，且距离Y轴中心线具有相同的距离，所述推磁电阻单元串4和挽磁电阻单元串5电连接成推挽式电桥，其所述磁电阻传感 单元的钉扎层及磁场敏感方向沿X轴方向，当Z轴方向外磁场作用时，软磁通量集中器2将Z方向磁场扭曲成具有X和-X轴向磁场分量的两个反向且幅度相同的敏感磁场作用于推磁电阻串4和挽磁电阻串5，从而形成推挽式磁电阻传感器。
图2为所述单芯片Z轴线性磁电阻传感器截面图，可以看出，推磁电阻传感单元串4和挽磁电阻传感单元串5位于衬底1之上，软磁通量集中器2位于推磁电阻传感单元串4和挽磁电阻传感单元串5之上，此外，还包括电极6以及位于各层之间的绝缘层7和8分别用于隔离磁电阻传感单元的电极以及隔离磁电阻传感单元4，5以及软磁通量集中器2，9为保护层，用于防护整个器件。
图1和图2所述单芯片Z轴线性磁电阻传感器中的磁电阻传感单元串4和5为TMR磁电阻传感单元，包含自由层、钉扎层以及中间势垒层，其自由层的起始磁化方向为Y轴方向，钉扎层磁化方向即磁场敏感方向为X轴方向。以上所述单芯片Z轴磁电阻传感器可以实现来自于Z轴的外磁场分量的测量，但存在如下问题：
1)晶圆测试阶段，需要设计复杂的Z向外磁场产生系统，包括电磁线圈和电磁线圈电源，而且电磁线圈系统需要随着探针平台一起移动，从而增加了测量的成本，影响了测量的效率；
2)电磁线圈系统磁场的施加和定位存在着不精确的问题，从而影响测量的精度；
3)由于自由层软磁薄膜中存在磁畴，在外磁场作用时，存在着畴壁移动的不可逆性，导致在外磁场移除之后，自由层磁性薄膜无法回复起始状态，并且导致磁滞的出现，使得传感器测量可重复性难以保障。
发明内容
为了解决以上的问题，本发明提出了一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，在前述单芯片Z轴线性磁电阻传感器结构的基础上，在芯片上引入校准线圈/重置线圈，通过在校准线圈中通过适当电流，在推磁电阻传感单元串和挽磁电阻传感单元串所在位置分别沿X和-X方向产生大小相同的电流磁场，并且实现通过电流的调节实现磁场大小的精确调节，由于校准线圈位于所述Z轴传感器芯片上，因此测量时只需要通过探针即可以施加电流的 方式进行测量，从而提高了测量的效率，并且保证了测量的精度。
同样，当Z轴磁电阻传感器受外磁场作用发生不可逆的磁化状态改变时，可以在重置线圈中通入电流，在所有磁电阻传感单元处产生沿自由层起始磁化方向的外磁场，从而实现对自由层磁化状态的恢复，消除由于磁场作用历史对软磁薄膜磁化状态的影响。
本发明所提出的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，包括单芯片Z轴线性磁电阻传感器，以及校准线圈或/和重置线圈，所述单芯片Z轴线性磁电阻传感器包括将Z方向磁场扭曲成具有X和-X轴向磁场分量的两个反向且幅度相同的敏感磁场的软磁通量集中器和包含多个磁电阻单元的阵列，所述多个磁电阻单元形成推磁电阻传感单元串和挽磁电阻传感单元串，
所述校准线圈/重置线圈分别包括平行于所述单芯片Z轴线性磁电阻传感器的磁电阻传感单元的钉扎层/自由层磁化方向的直导线，
所述校准线圈在所述单芯片Z轴线性磁电阻传感器的推/挽磁电阻传感单元串处产生同/反钉扎层方向且等值的校准磁场，所述重置线圈在所述单芯片Z轴线性磁电阻传感器的所有磁电阻传感单元处产生沿自由层磁化方向的均匀重置磁场。
所述校准线圈为平面校准线圈，所述平面校准线圈的直导线与所述推磁电阻传感单元串和挽磁电阻传感单元串一一对应，且分别位于所述软磁通量集中器Y轴中心线的所述推磁电阻传感单元串和所述挽磁电阻传感单元串的同一侧，且与所述推磁电阻传感单元串对应的直导线与所述挽磁电阻传感单元串对应的直导线具有相反方向的电流。
所述平面校准线圈的直导线与所述软磁通量集中器的Y轴中心线的距离为0～(1/2*Lx+1/2*Lgap)，其中Lx为所述通量集中器的宽度，Lgap为所述通量集中器之间间隙的宽度。
所述平面校准线圈的直导线与Y轴中心线距离为0～1/2*Lx时，所述平面线圈位于所述单芯片Z轴线性磁电阻传感器的衬底之上磁电阻传感单元之下、磁电阻传感单元和软磁通量集中器之间、软磁通量集中器之上。
所述平面校准线圈的直导线与Y轴中心线距离为1/2*Lx～(1/2*Lx+1/2*Lgap)时，所述平面线圈位于所述单芯片Z轴线性磁电阻传感器的衬底之上磁电阻传感单元之下、磁电阻传感单元和软磁通量集中器之间、 软磁通量集中器之间间隙处。
所述校准线圈是缠绕软磁通量集中器和磁电阻传感单元的三维校准线圈，
所述三维校准线圈包括多个相互串联的三维校准子线圈，每一个所述软磁通量集中器、所述推磁电阻传感单元串、挽磁电阻传感单元串均对应一个所述三维校准子线圈，
所述三维校准子线圈包括平行于所述软磁通量集中器Y轴中心线的第一组直导线和第二组直导线，所述第一组直导线和第二组直导线对称分布在对应的所述软磁通量集中器Y轴中心线两侧，所述第一组/第二组直导线包括两条直导线，所述第一组/第二组直导线的两条直导线分别位于所述软磁通量集中器或推磁电阻传感单元串、挽磁电阻传感单元串表面上，所述第一组直导线的一条直导线和第二组直导线的一条直导线对称于所述Y轴中心线分布于推和挽磁电阻传感单元串之间区域，所述第一组直导线的另一条直导线和第二组直导线的另一条直导线对称于所述Y轴中心线分布于推和挽磁电阻传感单元串的外侧区域，在所述Y轴中心线两侧的所述第一组直导线和第二组直导线分别形成一个三维螺线圈，
且两个所述三维螺线圈具有相反缠绕方向，且相互之间串联连接，其中一个所述三维螺线圈产生平行于X方向的磁场，另一个所述三维螺线圈产生-X方向的磁场。
所述重置线圈是平面重置线圈，所述平面重置线圈包含多个串联连接的垂直于所述软磁通量集中器Y轴中心线的直导线，其中，所述直导线位于所述Z轴线性传感器沿X轴方向的磁电阻单元行正上方或者正下方，并具有相同的电流方向。
所述重置线圈是三维重置线圈，所述三维重置线圈包含多个平行于所述磁电阻传感单元阵列沿X轴方向的磁电阻单元行的第一组直导线和第二组直导线，所述第一组直导线和第二组直导线分别位于所述软磁通量集中器和所述磁电阻单元的表面，所述第一组直导线和第二组直导线具有相反电流方向，并连接成一个螺线圈。
所述重置线圈和校准线圈为高导电率材料，如Cu、Au和Ag。
所述重置线圈/校准线圈和所述单芯片Z轴磁电阻传感器之间采用绝缘材料隔离，所述绝缘材料为SiO2、Al2O3、Si3N4、聚酰亚胺或光刻胶。
所述校准线圈包含一个正的端口和一个负的端口，两端通过电流时，其所 产生的校准磁场的幅度在所述推磁电阻传感单元串和挽磁电阻传感单元串的线性工作区域内。
所述校准线圈的电流可以设定为一个电流值，或者为多个电流值。
所述重置线圈包含两个端口，所述重置磁场大小为高于所述自由层的饱和磁场值。
所述重置线圈中的电流为脉冲电流或直流电流。
附图说明
图1为单芯片Z轴磁电阻线性传感器结构图；
图2为单芯片Z轴磁电阻线性传感器截面图；
图3显示了平面校准线圈样式一；
图4显示了平面校准线圈样式二；
图5显示了平面校准线圈位置一；
图6显示了平面校准线圈位置二；
图7显示了平面校准线圈位置三；
图8显示了平面校准线圈位置四；
图9为平面校准线圈在单芯片Z轴磁电阻传感器上的磁力线分布图一；
图10为平面校准线圈在磁电阻传感单元位置处的X向磁场分布图一；
图11为平面校准线圈在单芯片Z轴磁电阻传感器上的磁力线分布图二；
图12为平面校准线圈在磁电阻传感单元位置处的X向磁场分布图二；
图13为平面校准线圈在单芯片Z轴磁电阻传感器上的磁力线分布图三；
图14为平面校准线圈在磁电阻传感单元位置处的X向磁场分布图三；
图15为三维校准线圈结构图；
图16为三维校准线圈截面图；
图17为三维校准线圈在单芯片Z轴磁电阻传感器上的磁力线分布图；
图18为三维校准线圈在磁电阻传感单元位置处的X向磁场分布图；
图19为平面重置线圈结构图；
图20显示了平面重置线圈截面位置图一；
图21显示了平面重置线圈截面位置图二；
图22显示了平面重置线圈截面位置图三；
图23为平面重置线圈在单芯片Z轴磁电阻传感器上的磁力线分布图；
图24为平面重置线圈在磁电阻传感单元位置处的Y向磁场分布图；
图25为三维重置线圈结构图；
图26为三维重置线圈截面位置图；
图27为三维重置线圈在单芯片Z轴磁电阻传感器上的磁力线分布图；
图28为三维重置线圈在磁电阻传感单元位置处的Y向磁场分布图；
图29显示了重置线圈和校准线圈在单芯片Z轴磁电阻传感器上截面图一；
图30显示了重置线圈和校准线圈在单芯片Z轴磁电阻传感器上截面图二；
图31显示了重置线圈和校准线圈在单芯片Z轴磁电阻传感器上截面图三。
具体实施方式
下面将参考附图并结合实施例，来详细说明本发明。
实施例一
图3和图4分别为所述平面校准线圈101和102在所述单芯片Z轴磁电阻传感器上的两种结构分布图。所述平面校准线圈101和102包括多个平行于所述软磁通量集中器Y轴中心线3的直导线10和11，12和13，所述直导线10和11，12和13位于所述软磁通量集中器Y轴中心线3的两侧，其中10和12与所述推磁电阻传感单元串4同侧并一一对应，直导线11和13与所述挽磁电阻传感单元串5同侧并一一对应；且图3中对应于所述推磁电阻传感单元串4的所述直导线10和对应于挽磁电阻传感单元串5的所述直导线11相对于所述Y轴中心线3具有相同的距离，图4中对应于所述推磁电阻传感单元串4的所述直导线12和对应于所述挽磁电阻传感单元串5的所述直导线13也具有相同的距离。
所有位于所述软磁通量集中器Y轴中心线两侧中同一侧的所述直导线具有相同的电流方向，位于两侧的所述直导线具有相反的电流方向。如图3中所述直导线10和所述直导线11，图4中所述直导线12和所述直导线13具有相反的电流方向。
所有直导线与所述Y轴中心线的距离为0～(1/2*Lx+1/2*Lgap)。进一步的，所有直导线可以位于所述软磁通量集中的所在区域，即所有直导线与所述Y轴中心线的距离为0～1/2*Lx，即位于3和31，3和33之间区域。
如图3所对应的平面校准线圈结构，直导线10和11直接位于所述推磁电阻传感单元串4和挽磁电阻传感单元串的正上方或正下方。
图4所对应的平面校准线圈中所述直导线位于所述软磁通量集中器之间的间隙处，即所述直导线与所述Y轴中心线的距离为1/2*Lx～(1/2*Lx+1/2*Lgap)，如图4所示，直导线12和13位于所述通量集中器两侧的间隙处即位于31和32，33和34之间区域。
图5-8分别为所述平面校准线圈101和102在所述单芯片Z轴磁电阻传感器上的可能的位置的截面图。以图3所示的平面校准线圈101的直导线与所述Y轴中心线的距离为0～1/2*Lx为例，所述平面校准线圈101可以位于图5中所示的衬底1之上推、挽磁电阻传感单元串4和5之间，图6所示的推、挽磁电阻传感单元串4和5以及软磁通量集中器2之间，以及图7所示的软磁通量集中器2之上，相应的，分别引入绝缘层81，82和83来使得平面校准线圈101和周围各层之间的电隔离。
以图4所示的平面校准线圈102的直导线与所述Y轴中心线的距离为1/2*Lx～(1/2*Lx+1/2*Lgap)，除了同样可以位于图5中所示的衬底1之上推、挽磁电阻传感单元串4和5之间，图6所示的推、挽磁电阻传感单元串4和5以及软磁通量集中器2之间之外两种情况之外，还可以如图8所示位于推、挽磁电阻传感单元串之上和所述软磁通量集中器2和2’之间间隙处。
图9和图10所示分别为图4中所示平面校准线圈102所产生的磁场在单芯片Z轴磁电阻传感器上的磁力线分布及其在推磁电阻传感单元串和挽磁电阻传感单元串位置处的沿X方向的磁场分量的分布。所述直导线位于相邻两个软磁通量集中器2的间隙处，位于所述推磁电阻传感单元串4和挽磁电阻传感单元串5处的直导线分别产生两个反向的环向磁力线分布圈，且磁力线圈经过软磁通量集中器2到达所述推磁电阻传感单元串4和挽磁电阻传感单元串5位置，其中，n1-n5分别对应各个软磁通量集中器2的中心位置，m1-m10分别对应各个推磁电阻传感器单元串和挽磁电阻传感单元串位置。可以从图10看出，位于通量集中器2中间位置处即n1-n5位置处的X向磁场分量为0，而位于通量集中器2表面的推磁电阻传感单元串4和挽磁电阻传感单元串5处具有相反的X向磁场分量，即m1相对于m2、m3相对于m4、m5相对于m6、m7相对于m8、m9相对于m10大小相同，方向相反。
图11和图12，图13和图14所示分别为图3所示平面校准线圈101在所述推磁电阻传感单元串4和挽磁电阻传感单元串5表面下方，以及位于所述软磁通量集中器2表面上方时所产生的磁力线分布及传感器位置处X方向磁场分 量的分布。
可以看出，图11中，平面校准线圈101位于推磁电阻传感单元串2和挽磁电阻传感单元串4的正下方位置，n11-n15分别为软磁通量集中器2的中心位置，m11-m20分别为推磁电阻传感单元串和挽磁电阻传感单元串，图12中，位于所述磁电阻传感单元位置处平行于X方向上，n11-n15的X磁场分量为0，而推磁电阻传感单元m11和挽磁电阻传感单元m12，m13和m14，m15和m16，m17和m18，m19和m20，则具有大小相同，方向相反的X磁场分量。
图13中，平面校准线圈101位于软磁通量集中器2的表面位置上方并且分别对应推磁电阻传感单元串4和挽磁电阻传感单元串5，n21-25分别为软磁通量集中器2的中心位置，m21-25分别为推磁电阻传感单元串和挽磁电阻传感单元串，图14中，磁电阻传感单元串位置，n21-n25处X磁场分量为0，而推磁电阻单元4和挽磁电阻单元5，即m21相对于m22，m23相对于m24，m25相对于m26，m27相对于m28，m29相对于m30，X磁场分量大小相同，方向相反。两种情况下，磁力线以直导线为中心构成两个环形圈，显然直导线位于软磁通量集中器以下时即图11，在传感器位置所产生的X方向磁场分量明显要大于直导线位于软磁通量集中器上面时即图13的X方向磁场分量。
因此，平面校准线圈可以通过电流的调节实现对于推磁电阻传感单元串以及挽磁电阻传感单元串的反方向，等大小磁场，从而可以实现对Z向外磁场的替代，实现对单芯片Z轴磁电阻传感器的校准。
实施例二
图15为三维校准线圈103结构图，可以看出，对应于一个推磁电阻传感单元串5和挽磁电阻传感单元串4以及位于其表面的软磁通量器2，有一个三维校准子线圈，且各个三维校准子线圈之间串联连接。
所述每一个三维线圈包含平行于所述软磁通量集中器Y轴中心线3的第一组直导线和第二组直导线，所述第一组直导线和第二组直导线对称分布在对应的软磁通量集中器Y轴中心线3两侧，直导线14、16构成第一组直导线，直导线15、17构成第二组直导线，其中直导线14和15位于所述软磁通量集中器/推、挽磁电阻传感单元串的表面上，且位于推磁电阻传感单元串5和挽磁电阻传感单元串4之间区域，且相对于所述Y轴中心线3对称；
直导线16和17位于推、挽磁电阻传感单元串/软磁通量集中器的表面上， 且位于推磁电阻传感单元串5和挽磁电阻传感单元串4外侧，且相对于所述Y轴中心线3对称。所述位于Y轴中心线3两侧的两组直导线各自形成一个螺线圈，且相互串联并具有相反缠绕方向，这样，三维校准子线圈在推磁电阻传感单元串5和挽磁电阻传感单元串4处分别产生X和-X方向的磁场，且大小相同，同时由于软磁通量集中器的作用，大大减小线圈中所需的电流，减小了功耗。
图16为所述三维校准线圈103在单芯片Z轴磁电阻传感截面图上的位置图，所述两组直导线，两组直导线中各自对应的其中一条直导线14和15位于软磁通量通量集中器2表面，对应的另一条直导线16和17位于推磁电阻传感单元串5、挽磁电阻传感单元串4的表面。14和15之间，16和17之间分别相对于Y轴中心线对称分布，其中14和15分布于推磁电阻传感单元串5和挽磁电阻传感单元串4之间区域，16和17分布于推磁电阻传感单元串5和挽磁电阻传感单元串4外侧的区域。14和16构成一个螺线圈，15和17构成一个螺线圈，两个螺线圈串联，且具有相反的缠绕方向。和实施例1相同，还包括用于隔离三维线圈和其他部件的绝缘层84和85。尽管图16中的31为直导线14和15位于软磁通量集中器表面，16和17位于推磁电阻传感单元串5和挽磁电阻传感单元串4表面，实际上如果两者互换位置，同样可以适用于三维校准线圈。
图17和图18分别为三维校准线圈103在单芯片Z轴磁电阻传感器芯片上的磁力线分布图以及在推磁电阻传感单元串4和挽磁电阻传感单元串5处的X轴向磁场分布图。可以看出，三维校准子线圈103在通量集中器2及推、挽磁电阻传感单元串4和5处各围绕直导线形成各自的磁力线环路，并依次穿过软磁通量集中器和推、挽磁电阻传感单元串。图17中，m31-m34分别为软磁通量集中器2的中心线，n41-n48分别为推磁电阻传感单元串4和挽磁电阻传感单元串5的位置，图18中，m31-m34软磁通量集中器的中心线处X磁场分量为0，而推磁电阻传感单元串4和挽磁电阻传感单元串5，即n41相对于n42，n43相对于n44，n45相对于n46，n47相对于n48，具有大小相等，方向相反的x磁场分量，符合校准磁场的要求。
实施例三
图19为平面重置线圈104的结构图，包含多个平行于X轴的直导线18， 所述直导线18垂直于所述Y轴中心线3，且横跨推电阻传感单元串5和挽磁电阻传感单元串4上的磁电阻传感单元沿X方向的磁电阻传感单元，并且位于磁电阻传感单元的正上方或者正下方位置，所述直导线电流方向相同，且可使得其在所述的磁电阻单元位置处产生的沿Y方向的磁场分量大小相同，方向相同。
图20-22分别为平面重置线圈104在单芯片Z轴磁电阻传感器上位置的截面图。图20中，所述平面重置线圈104位于所述衬底1之上，推、挽磁电阻传感单元串4和5之下的情形，但它们也可以位于推、挽磁电阻传感单元串4和5之上；图21中平面重置线圈104位于所述软磁通量集中器2和推、挽磁电阻传感单元串4和5之间；图22是平面重置线圈104位于所述软磁通量集中器2之上。与校准线圈的实施例相同，为了实现平面重置线圈104和周边部件的隔离，采用了绝缘层86，87和88分别实现导线线圈的电绝缘。
图23为平面重置线圈104在Y方向截面上磁力线分布图，可以看出，在软磁通量集中器2表面，每个直导线产生一个磁力线环路，其中，n51-n55分别为位于软磁通量集中器2上的推磁电阻传感单元串或者挽磁电阻传感单元串，其在推、挽磁电阻传感单元n51-n55处产生的Y方向的磁场分量如图24所示，可以看出，所有磁电阻传感单元处于均匀Y向磁场当中，磁场幅度相同，方向也相同。
实施例四
图25为三维重置线圈105的结构图，包含上下两组平行于X轴的直导线19和20，所述直导线19和20以软磁通量集中器2和推磁电阻传感单元串5和挽磁电阻传感单元串4为磁芯进行缠绕成螺线管结构，且19和20具有相反的电流方向。
图26为三维重置线圈105在单芯片Z轴磁电阻传感器截面上的分布图，其上下两组直导线19和20分别位于所述软磁通量集中器2表面，以及所述推磁电阻传感单元串4和挽磁电阻传感单元串5表面，并借助于两边的接线柱连接，形成一个环路。为了同周边部件隔离，增加了89和90两个绝缘层以保证三维重置线圈105的电隔离。
图27和图28分别为三维重置线圈105的上下两组直导线组成的螺线圈通电流时在软磁通量集中器和推磁电阻传感单元串4和挽磁电阻传感单元串5 位置处产生的磁力线的分布，其中n61-n65分别为磁电阻传感单元串。从图28可以看出，Y磁场分布在磁电阻传感单元位置处具有周期分布的特点，其中n61-n65位置处的Y的磁场分量大小相同，方向也相同，因此，只要上下层的直导线采用均匀的间隔排列，即得到的磁力线和在推、挽磁电阻传感单元串4和5处产生的Y向磁场分布均具有周期性的分布特征，并且在所述推磁电阻传感单元和挽磁电阻传感单元各个磁电阻传感单元处产生相同的Y向磁场，因此所述上下直流导线可以位于所述推、挽磁电阻传感单元串的正上方或者正下方，也可以位于其它区域，只要直流导线为均匀分布，其在磁电阻传感单元串处所产生的磁场大小相同，方向也相同。
实施例五
以上分别对单个的平面校准线圈、三维校准线圈以及平面重置线圈、三维重置线圈的结构进行了描述，此外，还对它们在单芯片Z轴磁电阻传感器上的位置结构进行了说明。
实际在设计Z轴磁电阻传感器时，除了单芯片Z轴磁电阻传感器之外，可以分别包括校准线圈、或者重置线圈，或者两者都包括。
需要说明的是，在两者都包括的情况下，平面校准线圈、平面重置线圈可以位于同一位置，如衬底之上、推挽磁电阻传感单元之下，或者退、挽磁电阻传感单元和软磁通量集中器之间，或者软磁通量集中器之上，也可以位于以上三个位置中的任意两个位置的自由组合。对于三维校准线圈、三维重置线圈，则有一种固定的缠绕方法，即以软磁通量集中器和推、挽磁电阻传感单元为中心进行缠绕。对于三维线圈和平面线圈之间的组合，则三维线圈位于固定位置，平面线圈位于所述三种中的任意一种位置；所谓两种都是三维线圈的情况，则只有一种组合。
为了说明方便，只给出了平面校准线圈和平面重置线圈的三种典型组合结构如图29-31所示。如同图29中，平面校准线圈106和平面重置线圈107同时位于衬底1之上推、挽磁电阻传感单元串4和5之间；图30中平面校准线圈106位于推、挽磁电阻传感单元串4和5和软磁通量集中器2之间，平面重置线圈107位于衬底1之上推、挽磁电阻传感单元串4和5之间；图31中，平面校准线圈106位于软磁通量集中器2之上，平面重置线圈107位于衬底1之上推、挽磁电阻传感单元串4和5之间。
此外，实际使用时，校准线圈中通入的为直流电流，以产生直流磁场来代替外磁场，校准方式可以为预定一种直流电流值，观察在该电流值时的单芯片Z轴磁电阻传感器的输出值与标准值的差别，也可以为预定直流电流值的扫描值，观察单芯片Z轴磁电阻传感器的输出曲线与标准曲线的差别，以判定芯片是否合格。
对于重置线圈，通入的电路幅度必须以产生高于自由层的饱和值，从而使得磁化状态恢复到原来的状态，其重置电流可以为一种脉冲或者直流电路。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (14)

  1. 一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，包括单芯片Z轴线性磁电阻传感器，以及校准线圈或/和重置线圈；
    所述单芯片Z轴线性磁电阻传感器包括位于衬底上的软磁通量集中器和磁电阻传感单元阵列，
    所述软磁通量集中器为长条形，其长轴沿Y方向，短轴沿X方向，
    所有所述磁电阻传感单元为TMR传感单元，并且被钉扎层磁化方向都沿X方向，其自由层磁化方向都沿Y方向，所述磁电阻传感单元沿所述Y方向电连接成推磁电阻传感单元串和挽磁电阻传感单元串，并分别位于相对应的所述软磁通量集中器表面上方或下方的Y轴中心线的两侧，且距离所述Y轴中心线具有相同的距离，所述推磁电阻传感单元串和所述挽磁电阻传感单元串电连接成推挽式磁电阻传感器，
    测量Z方向外磁场时，所述软磁通量集中器将所述Z方向外磁场扭曲成具有分别平行和反平行于所述被钉扎层磁化方向且幅度相同的两个磁场分量，并分别作用于所述推磁电阻传感单元串和所述挽磁电阻传感单元串；
    所述校准线圈包含平行于所述推磁电阻传感单元串和挽磁电阻传感单元串的直导线，且分别在所述推磁电阻传感单元串和挽磁电阻传感单元串处产生具有强度相同，但方向分别平行和反平行于所述被钉扎层磁化方向的磁场分量的校准磁场；
    所述重置线圈包含平行于所述磁电阻传感单元被钉扎层磁化方向的直导线，且在所有所述磁电阻传感单元处均产生具有平行于自由层磁化方向的磁场分量的均匀重置磁场。
  2. 根据权利要求1所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，所述校准线圈为平面校准线圈，所述平面校准线圈的直导线与所述推磁电阻传感单元串和所述挽磁电阻传感单元串一一对应，且分别位于所述软磁通量集中器Y轴中心线的所述推磁电阻传感单元串和所述挽磁电阻传感单元串的同一侧，且与所述推磁电阻传感单元串对应的直导线与所述挽磁电阻传感单元串对应的直导线具有相反方向的电流。
  3. 根据权利要求2所述的一种单芯片具有校准/重置线圈的Z轴线性磁电 阻传感器，其特征在于，所述平面校准线圈的直导线与所述软磁通量集中器的Y轴中心线的距离为0～(1/2*Lx+1/2*Lgap)，其中Lx为所述通量集中器的宽度，Lgap为相邻的所述通量集中器之间间隙的宽度。
  4. 根据权利要求3所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，所述平面校准线圈的直导线与所述的相应的软磁通量集中器的Y轴中心线距离为0～1/2*Lx时，所述平面线圈位于所述单芯片Z轴线性磁电阻传感器的衬底之上磁电阻传感单元之下、磁电阻传感单元和软磁通量集中器之间或软磁通量集中器之上。
  5. 根据权利要求3所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，所述平面校准线圈的直导线与所述的相应的软磁通量集中器的Y轴中心线距离为1/2*Lx～(1/2*Lx+1/2*Lgap)时，所述平面校准线圈位于所述单芯片Z轴线性磁电阻传感器的衬底之上磁电阻传感单元之下、磁电阻传感单元和软磁通量集中器之间或软磁通量集中器之间间隙处。
  6. 根据权利要求1所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，所述校准线圈是缠绕软磁通量集中器和磁电阻传感单元的三维校准线圈，
    所述三维校准线圈包括多个相互电串联的三维校准子线圈，每一个所述软磁通量集中器、所述推磁电阻传感单元串、挽磁电阻传感单元串均对应一个所述三维校准子线圈，
    所述三维校准子线圈包括平行于所述软磁通量集中器Y轴中心线的第一组直导线和第二组直导线，所述第一组直导线和第二组直导线对称分布在对应的所述软磁通量集中器Y轴中心线两侧，
    所述第一组/第二组直导线包括两条直导线，所述第一组/第二组直导线的两条直导线分别位于所述软磁通量集中器或所述推磁电阻传感单元串和所述挽磁电阻传感单元串表面上，
    所述第一组直导线的一条直导线和第二组直导线的一条直导线对称于所述Y轴中心线分布于推和挽磁电阻传感单元串之间区域，所述第一组直导线的另一条直导线和第二组直导线的另一条直导线对称于所述Y轴中心线分布于 所述推磁电阻传感单元串和所述挽磁电阻传感单元串的外侧区域，
    所述第一组直导线形成第一三维螺线圈，所述第二组直导线形成第二三维螺线圈，且所述第一和第二三维螺线圈具有相反缠绕方向，且相互之间电串联连接，其中一个所述三维螺线圈产生平行于X方向的磁场，另一个所述三维螺线圈产生-X方向的磁场。
  7. 根据权利要求1所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，所述重置线圈是平面重置线圈，所述平面重置线圈包含多个串联电连接的垂直于所述软磁通量集中器Y轴中心线的直导线，其中，所述直导线位于所述Z轴线性传感器沿所述X轴方向的所述磁电阻传感单元行正上方或者正下方，并具有相同的电流方向。
  8. 根据权利要求1所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，所述重置线圈是三维重置线圈，所述三维重置线圈包含多个平行于所述磁电阻传感单元阵列沿所述X轴方向的所述磁电阻传感单元行的第一组直导线和第二组直导线，
    所述第一组直导线和第二组直导线分别位于所述软磁通量集中器和所述磁电阻传感单元的表面，所述第一组直导线和第二组直导线具有相反电流方向，并连接成一个螺线圈。
  9. 根据权利要求1-8中任意一项所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，所述重置线圈和校准线圈为高导电率材料，所述高导电率材料为Cu、Au或Ag。
  10. 根据权利要求9所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，所述重置线圈/校准线圈和所述单芯片Z轴磁电阻传感器之间采用电绝缘材料隔离，所述绝缘材料为SiO2、Al2O3、Si3N4、聚酰亚胺或光刻胶。
  11. 根据权利要求1-6中任意一项所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，
    所述校准线圈包含一个正的端口和一个负的端口，所述正的端口和所述负的端口通过电流时，其所产生的所述校准磁场的幅度在所述推磁电阻传感单元串和挽磁电阻传感单元串的线性工作区域内。
  12. 根据权利要求11所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，
    所述校准线圈内的电流为设定的一个电流值或者多个电流值。
  13. 根据权利要求1、7或8所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，
    所述重置线圈包含两个端口，所述重置磁场大小为高于所述自由层的饱和磁场值。
  14. 根据权利要求13所述的一种单芯片具有校准/重置线圈的Z轴线性磁电阻传感器，其特征在于，
    所述重置线圈中的电流为脉冲电流或直流电流。
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