WO2016106946A1 - Coa型woled结构及制作方法 - Google Patents

Coa型woled结构及制作方法 Download PDF

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WO2016106946A1
WO2016106946A1 PCT/CN2015/072563 CN2015072563W WO2016106946A1 WO 2016106946 A1 WO2016106946 A1 WO 2016106946A1 CN 2015072563 W CN2015072563 W CN 2015072563W WO 2016106946 A1 WO2016106946 A1 WO 2016106946A1
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layer
pixel region
sub
anode
green
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French (fr)
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邹清华
石龙强
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a COA type WOLED structure and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • WOLED white organic light emitting diode
  • CF color filter layer
  • the COA type WOLED is a combination of COA (CF on Array, color filter attached to array substrate) technology and WOLED technology.
  • COA COA
  • the CF layer red/green/blue light resistance
  • the white light emitted by the OLED white light material passes through the red/green/blue light to obtain the red/green/blue primary colors.
  • this technology is not limited by the large-scale panel fabrication of the organic vapor-deposited reticle, and therefore has a wide range of applications in large-sized OLEDs.
  • FIG. 1 is a schematic structural diagram of a red sub-pixel region of a conventional COA-type WOLED structure, including a substrate 100, a gate electrode 200 disposed on the substrate 100, and a gate electrode disposed on the gate electrode 200
  • An insulating layer 300, an island-shaped oxide semiconductor layer 400 disposed on the gate insulating layer 300, an island-shaped etch barrier layer 500 disposed on the oxide semiconductor layer 400, and the etch barrier layer 500 a source/drain 600, a passivation protection layer 700 disposed on the source/drain 600, a red photoresist layer 710 disposed on the passivation protection layer 700, and a passivation protection layer 700.
  • the layer 110 is defined as a photoresist spacer 120 disposed on the pixel defining layer 110.
  • the green sub-pixel region and the blue sub-pixel region of the COA type WOLED structure have the same structure as the red sub-pixel region.
  • One of the disadvantages of the above-mentioned COA type WOLED is that the luminous efficiencies of the red/green/blue primary colors are relatively low.
  • the conventional top-emission OLED device can effectively enhance the luminous efficiency by adjusting the thickness of the OLED device and utilizing the microcavity resonance effect.
  • Another object of the present invention is to provide a method for fabricating a COA type WOLED, which can improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter, and improve the brightness of the COA type WOLED device.
  • the present invention provides a COA type WOLED structure including a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively include a substrate, a gate disposed on the substrate, a gate insulating layer disposed on the gate, and the gate is disposed on the gate
  • the thickness of the anode layer of the red sub-pixel region is greater than the thickness of the anode layer of the green sub-pixel region, and the thickness of the anode layer of the green sub-pixel region is greater than the thickness of the anode layer of the blue sub-pixel region.
  • the material of the semi-reflective layer is silver or copper or an alloy of the two, and the material of the cathode layer is aluminum.
  • the semi-reflective layer has a thickness of 1 to 100 nm.
  • the thickness of the anode layer of the red sub-pixel region is 20-300 nm
  • the thickness of the anode layer of the green sub-pixel region is 20-250 nm
  • the thickness of the anode layer of the blue sub-pixel region is 20 to 200 nm.
  • the material of the oxide semiconductor layer is indium gallium zinc oxide, and the material of the anode layer is indium tin oxide.
  • the invention also provides a method for manufacturing a COA type WOLED, comprising the following steps:
  • Step 1 providing a substrate, corresponding to a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region on the substrate, sequentially forming a gate, a gate insulating layer, an oxide semiconductor layer, an etch barrier layer, and a source /drain, passivation protective layer, red/green/blue photoresist layer, flat layer, and via;
  • Step 2 forming a semi-reflective layer on the flat layer corresponding to the upper of the red/green/blue photoresist layer, the semi-reflective layer contacting the source/drain via the via hole;
  • Step 3 forming an anode layer on the semi-reflective layer corresponding to the red sub-pixel region and the green sub-pixel region, respectively;
  • Step 4 depositing an anode layer on the flat layer, the anode layer covering the semi-reflective layer of the blue sub-pixel region;
  • Step 5 forming a photoresist layer on the anode layer corresponding to the red sub-pixel region and the semi-reflective layer of the blue sub-pixel region;
  • Step 6 etching the anode layer, controlling the etching condition, partially etching the anode layer of the green sub-pixel region, and stripping the photoresist layer to obtain anodes respectively located in the green sub-pixel region and the blue sub-pixel region Floor;
  • Step 7 Form a pixel defining layer on the anode layer, and form a photoresist spacer on the pixel defining layer;
  • Step 8 forming a white light emitting layer between the photoresist layer on the anode layer and the pixel defining layer;
  • Step 9 forming a cathode layer on the photoresist spacer and the white light emitting layer
  • Step 10 providing a package cover on the cathode layer to package the COA type WOLED, thereby completing the fabrication of the COA type WOLED.
  • the step 2 forms the semi-reflective layer by physical vapor deposition, yellow light, and an etching process.
  • the step 3 forms the anode layer by physical vapor deposition, yellow light, and an etching process.
  • the white light emitting layer is formed by an evaporation method.
  • the material of the semi-reflective layer is silver or copper or an alloy of the two, the material of the cathode layer is aluminum, the material of the oxide semiconductor layer is indium gallium zinc oxide, and the material of the anode layer is indium oxide. tin.
  • the present invention also provides a COA type WOLED structure, including a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region;
  • the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively include a substrate, a gate disposed on the substrate, a gate insulating layer disposed on the gate, and the gate is disposed on the gate
  • the thickness of the anode layer of the red sub-pixel region is greater than the thickness of the anode layer of the green sub-pixel region, and the thickness of the anode layer of the green sub-pixel region is greater than the thickness of the anode layer of the blue sub-pixel region;
  • the material of the semi-reflective layer is silver or copper or an alloy of the two, and the material of the cathode layer is aluminum;
  • the semi-reflective layer has a thickness of 1 to 100 nm.
  • the COA type WOLED structure of the present invention has a translucent metal layer as a semi-reflective layer on the flat layer, and the anode layers corresponding to the red/green/blue photoresist layer have different thicknesses.
  • the optimized microcavity structure for different light colors utilizes the microcavity resonance effect between the anode and the cathode to effectively improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter.
  • the method for fabricating a COA type WOLED of the present invention comprises: forming a metal layer on the flat layer as a semi-reflective layer, utilizing a microcavity resonance effect between the anode and the cathode, and controlling the anode corresponding to the red/green/blue photoresist layer
  • the thickness of the layer is respectively obtained to optimize the length of the microcavity for different light colors, thereby improving the luminous efficiency of the red/green/blue primary colors after passing through the color filter, and effectively improving the brightness of the COA type WOLED device.
  • FIG. 1 is a schematic cross-sectional view showing a conventional COA type WOLED structure
  • FIG. 2 is a cross-sectional view showing a red/green/blue sub-pixel region of a COA type WOLED structure of the present invention
  • FIG. 3 is a schematic cross-sectional view showing a structure of a COA type WOLED of the present invention.
  • FIG. 4 is a flow chart of a method for fabricating a COA type WOLED of the present invention.
  • step 1 is a schematic diagram of step 1 of a method for fabricating a COA type WOLED of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating a COA type WOLED according to the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating a COA type WOLED according to the present invention.
  • step 4 is a schematic diagram of step 4 of a method for fabricating a COA type WOLED according to the present invention.
  • step 5 is a schematic diagram of step 5 of a method for fabricating a COA type WOLED of the present invention.
  • FIG. 10 is a schematic diagram of step 6 of the method for fabricating a COA type WOLED of the present invention.
  • the present invention provides a COA type WOLED structure, as shown in FIG. 3, including a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region.
  • the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively include a substrate 1 , a gate 2 disposed on the substrate 1 , and a gate 2 disposed on the gate 2 .
  • a gate insulating layer 3 an island-shaped oxide semiconductor layer 4 provided on the gate insulating layer 3, an island-shaped etch barrier layer 5 provided on the oxide semiconductor layer 4, and the etch barrier layer a source/drain 6 on 5, a passivation protective layer 7 provided on the source/drain 6, a red/green/blue photoresist layer 71/72/73 provided on the passivation protective layer 7.
  • a flat layer 8 covering the red/green/blue photoresist layer 71/72/73 on the passivation protective layer 7, disposed on the flat layer 8 and via the via 81 and the source/ a semi-reflective layer 9 in contact with the drain 6 , an anode layer 10 disposed on the semi-reflective layer 9 , a pixel defining layer 11 disposed on the anode layer 10 , and light disposed on the pixel defining layer 11 a spacer 12, a white light emitting layer 13 disposed on the anode layer 10 and the pixel defining layer 11, a cathode layer 14 disposed on the white light emitting layer 13, and a package cover disposed on the cathode layer 14.
  • the thickness of the anode layer 10 of the red sub-pixel region is greater than the thickness of the anode layer 10 of the green sub-pixel region, and the thickness of the anode layer 10 of the green sub-pixel region is greater than the anode layer 10 of the blue sub-pixel region. thickness of.
  • the material of the semi-reflective layer 9 is a metal or an alloy having a high transmittance such as silver or copper, and the material of the cathode layer 14 is aluminum, which serves as a reflective layer.
  • the semi-reflective layer 9 has a thickness of 1 to 100 nm.
  • the thickness of the anode layer 10 of the red sub-pixel region is 20 to 300 nm
  • the thickness of the anode layer 10 of the green sub-pixel region is 20 to 250 nm
  • the thickness of the anode layer 10 of the blue sub-pixel region is 20 to 200nm.
  • the material of the oxide semiconductor layer 4 is IGZO (indium gallium zinc oxide),
  • the material of the anode layer 10 is ITO (Indium Tin Oxide).
  • a flat layer is provided with a semi-transparent metal layer as a semi-reflective layer, and the corresponding anode layer 10 on the red/green/blue photoresist layer has different thicknesses to form different light colors.
  • the optimized microcavity structure utilizes a microcavity resonance effect between the anode and the cathode to effectively improve the luminous efficiency of the red/green/blue primary colors passing through the color filter.
  • the present invention further provides a method for fabricating a COA type WOLED, comprising the following steps:
  • Step 1 as shown in FIG. 5, the substrate 1 is provided, and the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region are respectively corresponding to the substrate 1, and the gate electrode 2 and the gate insulating layer 3 are sequentially formed.
  • the material of the oxide semiconductor layer 4 is IGZO (Indium Gallium Zinc Oxide).
  • Step 2 as shown in FIG. 6, a semi-reflective layer 9 is formed on the flat layer 8 corresponding to the upper of the red/green/blue photoresist layer 71/72/73, and the semi-reflective layer 9 is The via 81 is in contact with the source/drain 6.
  • the semi-reflective layer 9 is formed by physical vapor deposition, yellow light, and an etching process.
  • the material of the semi-reflective layer 9 is a metal or an alloy having a high transmittance such as silver or copper, and the material of the cathode layer 14 is aluminum, which serves as a reflective layer.
  • Step 3 As shown in FIG. 7, the anode layer 10 is formed on the semi-reflective layer 9 corresponding to the red sub-pixel region and the green sub-pixel region, respectively.
  • the material of the anode layer 10 is ITO (indium tin oxide).
  • the anode layer is formed using physical vapor deposition, yellow light, and an etching process.
  • Step 4 As shown in FIG. 8, an anode layer is deposited again on the flat layer 8, and the anode layer covers the semi-reflective layer 9 of the blue sub-pixel region.
  • Step 5 As shown in FIG. 9, a photoresist layer 70 is formed on the anode layer corresponding to the red sub-pixel region and the semi-reflective layer 9 of the blue sub-pixel region.
  • Step 6 as shown in FIG. 10, etching the anode layer, controlling etching conditions, partially etching the anode layer of the green sub-pixel region, and stripping the photoresist layer 70 to obtain respectively located in the red sub-pixel region.
  • the anode layers 10 located in the red sub-pixel region, the green sub-pixel region, and the blue sub-pixel region respectively have different thicknesses. Specifically, the thickness of the anode layer 10 of the red sub-pixel region is greater than the green color. The thickness of the anode layer 10 of the sub-pixel region, the thickness of the anode layer 10 of the green sub-pixel region being greater than the thickness of the anode layer 10 of the blue sub-pixel region.
  • Step 7 Form a pixel defining layer 11 on the anode layer 10, and define a layer at the pixel A photoresist spacer 12 is formed on 11.
  • Step 8 On the anode layer 10 and the pixel defining layer 11, a white light emitting layer 13 is formed between the photoresist spacers 12.
  • the white light emitting layer 13 is formed by an evaporation method.
  • Step 9 Form the cathode layer 14 on the photoresist spacer 12 and the white light emitting layer 13.
  • the material of the cathode layer 14 is aluminum, which serves as a reflective layer.
  • Step 10 A package cover 15 is disposed on the cathode layer 14 to encapsulate the COA type WOLED, thereby completing the fabrication of the COA type WOLED.
  • a microcavity resonance effect is generated between the anode and the cathode, and by controlling the red/green/blue photoresist layer
  • the thickness of the anode layer is such that the optimized microcavity lengths for different light colors are respectively obtained, thereby improving the luminous efficiency of the red/green/blue primary colors passing through the color filter.
  • the COA type WOLED structure of the present invention has a translucent metal layer as a semi-reflective layer on the flat layer, and the anode layers corresponding to the red/green/blue photoresist layer have different thicknesses, and are formed for
  • the optimized microcavity structure of different light colors utilizes the microcavity resonance effect between the anode and the cathode to effectively improve the luminous efficiency of the red/green/blue primary colors after passing through the color filter.
  • the method for fabricating a COA type WOLED of the present invention comprises: forming a metal layer on the flat layer as a semi-reflective layer, utilizing a microcavity resonance effect between the anode and the cathode, and controlling the anode corresponding to the red/green/blue photoresist layer
  • the thickness of the layer is respectively obtained to optimize the length of the microcavity for different light colors, thereby improving the luminous efficiency of the red/green/blue primary colors after passing through the color filter, and effectively improving the brightness of the COA type WOLED device.

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Abstract

提供一种COA型WOLED结构及制作方法，该结构包括红/绿/蓝色子像素区域，各子像素区域分别包括基板(1)、栅极(2)、栅极绝缘层(3)、氧化物半导体层(4)、蚀刻阻挡层(5)、源/漏极(6)、钝化保护层(7)、红/绿/蓝色光阻层(71/72/73)、平坦层(8)、半反射层(9)、阳极层(10)、像素定义层(11)、光阻间隔物(12)、白光发光层(13)、阴极层(14)、及封装盖板(15)。通过在平坦层(8)上形成半透明金属层作为半反射层，利用阴阳极之间产生微腔共振效应，并通过控制红/绿/蓝色光阻层(71/72/73)上所对应的阳极层(10)的厚度，以分别得到针对不同光色的最优化的微腔长度，从而提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，有效提高COA型WOLED器件的亮度。

Description

COA型WOLED结构及制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种COA型WOLED结构及制作方法。
背景技术
OLED(Organic Light-Emitting Diode，有机发光二极管)是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”。再加上其生产设备投资远小于TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜晶体管液晶显示器)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
为实现OLED显示器的全彩化，一种方式是通过白色有机发光二极管(WOLED，White Organic Light Emitting Diode)和彩色滤光层(CF，Color Filter)叠加来实现。其中，WOLED和CF层叠加过程不需要精准的掩膜工艺，就可以实现OLED显示器的高分辨率。
COA型WOLED是COA(CF on Array，彩色滤光片贴附于阵列基板)技术和WOLED技术的结合。利用COA技术，将CF层(红/绿/蓝光阻)做到阵列基板上，然后OLED白光材料所发射的白光通过红/绿/蓝光阻，得到红/绿/蓝三原色的光。与传统底发光OLED结构相比，这种技术不受有机蒸镀光罩在大尺寸面板制作的限制，因此，在大尺寸OLED方面有着广泛的应用。
图1所示为一种现有COA型WOLED结构的红色子像素区域的结构示意图；其包括基板100、设于所述基板100上的栅极200、设于所述栅极200上的栅极绝缘层300、设于所述栅极绝缘层300上的岛状氧化物半导体层400、设于所述氧化物半导体层400上的岛状蚀刻阻挡层500、设于所述蚀刻阻挡层500上的源/漏极600、设于所述源/漏极600上的钝化保护层700、设于所述钝化保护层700上的红色光阻层710、设于所述钝化保护层700上覆盖所述红色光阻层710的平坦层800、设于所述平坦层800上并经由过孔810与所述源/漏极600相接触的阳极层101、设于所述阳极层101上的像素 定义层110、设于所述像素定义层110上的光阻间隔物120。该COA型WOLED结构的绿色子像素区域及蓝色子像素区域的结构与红色子像素区域相同。
上述COA型WOLED的缺点之一是红/绿/蓝三原色的发光效率相对较低。传统顶发射型OLED器件可以通过调节OLED器件的厚度，利用微腔共振效应，使得发光效率得到有效增强。但在上述COA型WOLED中，无法像传统OLED器件一样通过调节器件的厚度，利用微腔效应提高各个光色的发光效率。
发明内容
本发明的目的在于提供一种COA型WOLED结构，其经过彩色滤光片后的红/绿/蓝三原色均具有较高的发光效率。
本发明的另一目的在于提供一种COA型WOLED的制作方法，能够提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，提高COA型WOLED器件的亮度。
为实现上述目的，本发明提供一种COA型WOLED结构，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板；
所述红色子像素区域的阳极层的厚度大于所述绿色子像素区域的阳极层的厚度，所述绿色子像素区域的阳极层的厚度大于所述蓝色子像素区域的阳极层的厚度。
所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝。
所述半反射层的厚度为1～100nm。
所述红色子像素区域的阳极层的厚度为20～300nm，所述绿色子像素区域的阳极层的厚度为20～250nm，所述蓝色子像素区域的阳极层的厚度为 20～200nm。
所述氧化物半导体层的材料为铟镓锌氧化物，所述阳极层的材料为氧化铟锡。
本发明还提供一种COA型WOLED的制作方法，包括如下步骤：
步骤1、提供基板，在所述基板上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域，依次形成栅极、栅极绝缘层、氧化物半导体层、蚀刻阻挡层、源/漏极、钝化保护层、红/绿/蓝色光阻层、平坦层、及过孔；
步骤2、在所述平坦层上分别对应所述红/绿/蓝色光阻层的上方形成半反射层，所述半反射层经由所述过孔与所述源/漏极相接触；
步骤3、分别在红色子像素区域与绿色子像素区域所对应的半反射层上形成阳极层；
步骤4、在所述平坦层上再次沉积阳极层，所述阳极层覆盖蓝色子像素区域的半反射层；
步骤5、在所述红色子像素区域与蓝色子像素区域的半反射层上所对应的阳极层上形成光阻层；
步骤6、对所述阳极层进行蚀刻，控制刻蚀条件，对绿色子像素区域的阳极层进行部分刻蚀，并剥离光阻层，得到分别位于绿色子像素区域与蓝色子像素区域的阳极层；
步骤7、在所述阳极层上形成像素定义层，并在所述像素定义层上形成光阻间隔物；
步骤8、在所述阳极层与像素定义层上，于所述光阻间隔物之间形成白光发光层；
步骤9、在所述光阻间隔物与白光发光层上形成阴极层；
步骤10、在所述阴极层上设置封装盖板，对COA型WOLED进行封装，从而完成COA型WOLED的制作。
所述步骤2采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层。
所述步骤3采用物理气相沉积、黄光、及蚀刻制程形成所述阳极层。
所述步骤9采用蒸镀方法形成所述白光发光层。
所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝，所述氧化物半导体层的材料为铟镓锌氧化物，所述阳极层的材料为氧化铟锡。
本发明还提供一种COA型WOLED结构，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板；
所述红色子像素区域的阳极层的厚度大于所述绿色子像素区域的阳极层的厚度，所述绿色子像素区域的阳极层的厚度大于所述蓝色子像素区域的阳极层的厚度；
其中，所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝；
其中，所述半反射层的厚度为1～100nm。
本发明的有益效果：本发明的COA型WOLED结构，其平坦层上设有半透明金属层作为半反射层，并且红/绿/蓝色光阻层上所对应的阳极层具有不同的厚度，形成针对不同光色的最优化的微腔结构，从而利用阴阳极之间产生微腔共振效应，有效提高经过彩色滤光片后的红/绿/蓝三原色的发光效率。本发明的COA型WOLED的制作方法，通过在平坦层上形成金属层作为半反射层，利用阴阳极之间产生微腔共振效应，并通过控制红/绿/蓝色光阻层上所对应的阳极层的厚度，以分别得到针对不同光色的最优化的微腔长度，从而提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，有效提高COA型WOLED器件的亮度。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为一种现有COA型WOLED结构的剖面示意图；
图2为本发明COA型WOLED结构的红/绿/蓝色子像素区域的剖面示意图；
图3为本发明COA型WOLED结构的剖面示意图；
图4为本发明COA型WOLED的制作方法的流程图；
图5为本发明COA型WOLED的制作方法的步骤1的示意图；
图6为本发明COA型WOLED的制作方法的步骤2的示意图；
图7为本发明COA型WOLED的制作方法的步骤3的示意图；
图8为本发明COA型WOLED的制作方法的步骤4的示意图；
图9为本发明COA型WOLED的制作方法的步骤5的示意图；
图10为本发明COA型WOLED的制作方法的步骤6的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图2与图3，本发明提供一种COA型WOLED结构，如图3所示，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域。
如图2所示，所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板1、设于所述基板1上的栅极2、设于所述栅极2上的栅极绝缘层3、设于所述栅极绝缘层3上的岛状氧化物半导体层4、设于所述氧化物半导体层4上的岛状蚀刻阻挡层5、设于所述蚀刻阻挡层5上的源/漏极6、设于所述源/漏极6上的钝化保护层7、设于所述钝化保护层7上的红/绿/蓝色光阻层71/72/73、设于所述钝化保护层7上覆盖所述红/绿/蓝色光阻层71/72/73的平坦层8、设于所述平坦层8上并经由过孔81与所述源/漏极6相接触的半反射层9、设于所述半反射层9上的阳极层10、设于所述阳极层10上的像素定义层11、设于所述像素定义层11上的光阻间隔物12、设于所述阳极层10与像素定义层11上的白光发光层13、设于所述白光发光层13上的阴极层14、及设于所述阴极层14上的封装盖板15。
所述红色子像素区域的阳极层10的厚度大于所述绿色子像素区域的阳极层10的厚度，所述绿色子像素区域的阳极层10的厚度大于所述蓝色子像素区域的阳极层10的厚度。
优选的，所述半反射层9的材料为银或铜等穿透率较高的金属或者合金，所述阴极层14的材料为铝，其作为反射层。优选的，所述半反射层9的厚度为1～100nm。
所述红色子像素区域的阳极层10的厚度为20～300nm，所述绿色子像素区域的阳极层10的厚度为20～250nm，所述蓝色子像素区域的阳极层10的厚度为20～200nm。
优选的，所述氧化物半导体层4的材料为IGZO(氧化铟镓锌)，所述 阳极层10的材料为ITO(氧化铟锡)。
在上述COA型WOLED结构中，其平坦层上设有半透明金属层作为半反射层，并且红/绿/蓝色光阻层上所对应的阳极层10具有不同的厚度，形成针对不同光色的最优化的微腔结构，从而利用阴阳极之间产生微腔共振效应，有效提高经过彩色滤光片的红/绿/蓝三原色的发光效率。
请参阅图4，本发明还提供一种COA型WOLED的制作方法，包括如下步骤：
步骤1、如图5所示，提供基板1，在所述基板1上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域，依次形成栅极2、栅极绝缘层3、氧化物半导体层4、蚀刻阻挡层5、源/漏极6、钝化保护层7、红/绿/蓝色光阻层71/72/73、平坦层8、及过孔81。
优选的，所述氧化物半导体层4的材料为IGZO(氧化铟镓锌)。
步骤2、如图6所示，在所述平坦层8上分别对应所述红/绿/蓝色光阻层71/72/73的上方形成半反射层9，所述半反射层9经由所述过孔81与所述源/漏极6相接触。
具体地，采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层9。
优选的，所述半反射层9的材料为银或铜等穿透率较高的金属或者合金，所述阴极层14的材料为铝，其作为反射层。
步骤3、如图7所示，分别在红色子像素区域与绿色子像素区域所对应的半反射层9上形成阳极层10。
优选的，所述阳极层10的材料为ITO(氧化铟锡)。
具体地，采用物理气相沉积、黄光、及蚀刻制程形成所述阳极层。
步骤4、如图8所示，在所述平坦层8上再次沉积阳极层，所述阳极层覆盖蓝色子像素区域的半反射层9。
步骤5、如图9所示，在所述红色子像素区域与蓝色子像素区域的半反射层9上所对应的阳极层上形成光阻层70。
步骤6、如图10所示，对所述阳极层进行蚀刻，控制刻蚀条件，对绿色子像素区域的阳极层进行部分刻蚀，并剥离光阻层70，得到分别位于红色子像素区域、绿色子像素区域与蓝色子像素区域的阳极层10。
此时得到的位于红色子像素区域、绿色子像素区域、及蓝色子像素区域的阳极层10分别具有不同的厚度，具体的，所述红色子像素区域的阳极层10的厚度大于所述绿色子像素区域的阳极层10的厚度，所述绿色子像素区域的阳极层10的厚度大于所述蓝色子像素区域的阳极层10的厚度。
步骤7、在所述阳极层10上形成像素定义层11，并在所述像素定义层 11上形成光阻间隔物12。
步骤8、在所述阳极层10与像素定义层11上，于所述光阻间隔物12之间形成白光发光层13。
具体地，采用蒸镀方法形成所述白光发光层13。
步骤9、在所述光阻间隔物12与白光发光层13上形成阴极层14。
优选的，所述阴极层14的材料为铝，其作为反射层。
步骤10、在所述阴极层14上设置封装盖板15，对COA型WOLED进行封装，从而完成COA型WOLED的制作。
在上述COA型WOLED的制作方法中，通过在平坦层上形成半透明金属层作为半反射层，利用阴阳极之间产生微腔共振效应，并通过控制红/绿/蓝色光阻层上所对应的阳极层的厚度，以分别得到针对不同光色的最优化的微腔长度，从而提高经过彩色滤光片的红/绿/蓝三原色的发光效率。
综上所述，本发明的COA型WOLED结构，其平坦层上设有半透明金属层作为半反射层，并且红/绿/蓝色光阻层上所对应的阳极层具有不同的厚度，形成针对不同光色的最优化的微腔结构，从而利用阴阳极之间产生微腔共振效应，有效提高经过彩色滤光片后的红/绿/蓝三原色的发光效率。本发明的COA型WOLED的制作方法，通过在平坦层上形成金属层作为半反射层，利用阴阳极之间产生微腔共振效应，并通过控制红/绿/蓝色光阻层上所对应的阳极层的厚度，以分别得到针对不同光色的最优化的微腔长度，从而提高经过彩色滤光片后的红/绿/蓝三原色的发光效率，有效提高COA型WOLED器件的亮度。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种COA型WOLED结构，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
    所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板；
    所述红色子像素区域的阳极层的厚度大于所述绿色子像素区域的阳极层的厚度，所述绿色子像素区域的阳极层的厚度大于所述蓝色子像素区域的阳极层的厚度。
  2. 如权利要求1所述的COA型WOLED结构，其中，所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝。
  3. 如权利要求1所述的COA型WOLED结构，其中，所述半反射层的厚度为1～100nm。
  4. 如权利要求1所述的COA型WOLED结构，其中，所述红色子像素区域的阳极层的厚度为20～300nm，所述绿色子像素区域的阳极层的厚度为20～250nm，所述蓝色子像素区域的阳极层的厚度为20～200nm。
  5. 如权利要求1所述的COA型WOLED结构，其中，所述氧化物半导体层的材料为氧化铟镓锌，所述阳极层的材料为氧化铟锡。
  6. 一种COA型WOLED的制作方法，包括如下步骤：
    步骤1、提供基板，在所述基板上分别对应红色子像素区域、绿色子像素区域、及蓝色子像素区域，依次形成栅极、栅极绝缘层、氧化物半导体层、蚀刻阻挡层、源/漏极、钝化保护层、红/绿/蓝色光阻层、平坦层、及过孔；
    步骤2、在所述平坦层上分别对应所述红/绿/蓝色光阻层的上方形成半反射层，所述半反射层经由所述过孔与所述源/漏极相接触；
    步骤3、分别在红色子像素区域与绿色子像素区域所对应的半反射层上形成阳极层；
    步骤4、在所述平坦层上再次沉积阳极层，所述阳极层覆盖蓝色子像素区域的半反射层；
    步骤5、在所述红色子像素区域与蓝色子像素区域的半反射层上所对应的阳极层上形成光阻层；
    步骤6、对所述阳极层进行蚀刻，控制刻蚀条件，对绿色子像素区域的阳极层进行部分刻蚀，并剥离光阻层，得到分别位于红色子像素区域、绿色子像素区域与蓝色子像素区域的阳极层；
    步骤7、在所述阳极层上形成像素定义层，并在所述像素定义层上形成光阻间隔物；
    步骤8、在所述阳极层与像素定义层上，于所述光阻间隔物之间形成白光发光层；
    步骤9、在所述光阻间隔物与白光发光层上形成阴极层；
    步骤10、在所述阴极层上设置封装盖板，对COA型WOLED进行封装，从而完成COA型WOLED的制作。
  7. 如权利要求6所述的COA型WOLED的制作方法，其中，所述步骤2采用物理气相沉积、黄光、及蚀刻制程形成所述半反射层。
  8. 如权利要求6所述的COA型WOLED的制作方法，其中，所述步骤3采用物理气相沉积、黄光、及蚀刻制程形成所述阳极层。
  9. 如权利要求6所述的COA型WOLED的制作方法，其中，所述步骤9采用蒸镀方法形成所述白光发光层。
  10. 如权利要求6所述的COA型WOLED的制作方法，其中，所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝，所述氧化物半导体层的材料为铟镓锌氧化物，所述阳极层的材料为氧化铟锡。
  11. 一种COA型WOLED结构，包括红色子像素区域、绿色子像素区域、及蓝色子像素区域；
    所述红色子像素区域、绿色子像素区域、及蓝色子像素区域分别包括基板、设于所述基板上的栅极、设于所述栅极上的栅极绝缘层、设于所述栅极绝缘层上的岛状氧化物半导体层、设于所述氧化物半导体层上的岛状蚀刻阻挡层、设于所述蚀刻阻挡层上的源/漏极、设于所述源/漏极上的钝化保护层、设于所述钝化保护层上的红/绿/蓝色光阻层、设于所述钝化保护层上覆盖所述红/绿/蓝色光阻层的平坦层、设于所述平坦层上并经由过孔与所述源/漏极相接触的半反射层、设于所述半反射层上的阳极层、设于所述阳 极层上的像素定义层、设于所述像素定义层上的光阻间隔物、设于所述阳极层与像素定义层上的白光发光层、设于所述白光发光层上的阴极层、及设于所述阴极层上的封装盖板；
    所述红色子像素区域的阳极层的厚度大于所述绿色子像素区域的阳极层的厚度，所述绿色子像素区域的阳极层的厚度大于所述蓝色子像素区域的阳极层的厚度；
    其中，所述半反射层的材料为银或铜或二者的合金，所述阴极层的材料为铝；
    其中，所述半反射层的厚度为1～100nm。
  12. 如权利要求11所述的COA型WOLED结构，其中，所述红色子像素区域的阳极层的厚度为20～300nm，所述绿色子像素区域的阳极层的厚度为20～250nm，所述蓝色子像素区域的阳极层的厚度为20～200nm。
  13. 如权利要求11所述的COA型WOLED结构，其中，所述氧化物半导体层的材料为氧化铟镓锌，所述阳极层的材料为氧化铟锡。
PCT/CN2015/072563 2014-12-29 2015-02-09 Coa型woled结构及制作方法 Ceased WO2016106946A1 (zh)

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