WO2016106472A1 - 一种主动驱动无机发光二极管显示器件结构 - Google Patents

一种主动驱动无机发光二极管显示器件结构 Download PDF

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WO2016106472A1
WO2016106472A1 PCT/CN2014/001191 CN2014001191W WO2016106472A1 WO 2016106472 A1 WO2016106472 A1 WO 2016106472A1 CN 2014001191 W CN2014001191 W CN 2014001191W WO 2016106472 A1 WO2016106472 A1 WO 2016106472A1
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electrode
common electrode
pixel light
pixel
emitting device
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PCT/CN2014/001191
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English (en)
French (fr)
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孙润光
刘宏宇
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孙润光
刘宏宇
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Priority to CN201480084501.0A priority Critical patent/CN107112382B/zh
Priority to PCT/CN2014/001191 priority patent/WO2016106472A1/zh
Publication of WO2016106472A1 publication Critical patent/WO2016106472A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces

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  • the invention relates to an active light-emitting diode display device structure, in particular to an inorganic light-emitting diode display device structure for improving interconnection electrode stability and common electrode conductivity between a pixel driving circuit and a pixel light-emitting device.
  • Microdisplays are a core component of pico projectors and wearable displays.
  • microdisplay products mainly use two technologies: liquid crystal display (LCOS) and digital light processing (DLP). Both of these technologies are reflective display technologies with low light utilization and the need for additional optical systems, which increases the size and cost of projectors and near-eye displays.
  • LCOS liquid crystal display
  • DLP digital light processing
  • a recently discovered inorganic light-emitting diode display technology is an active light-emitting technology that is likely to replace existing products.
  • One of the main differences between microdisplays and ordinary flat panel displays is that their effective display area is small, that is, the display resolution is high, the pixel spacing is small, and the general pixel size is from several micrometers to ten micrometers. As the display resolution is increased, the stability of the interconnect electrodes of the inorganic light emitting diode display device and the conductivity of the common electrode are becoming higher and higher.
  • the pixel light-emitting device includes a substrate on which the pixel light-emitting device is located, an N-type inorganic semiconductor layer 2, a light-emitting inorganic semiconductor layer 3, a P-type inorganic semiconductor layer 4, a P-type electrode 5, and an N-type electrode 6.
  • the pixel driving circuit device includes a substrate 21 on which the pixel driving circuit device is located, and a pixel driving device contact electrode 22.
  • the method further includes: an interconnection electrode 23 of the pixel light emitting device region, and an interconnection electrode of the common electrode region
  • the pole 24 the height Ha of the pixel light emitting device and the interconnect electrode connection region, and the height Hc of the common electrode and the interconnect electrode connection region.
  • the height Hc of the connection region of the common electrode and the interconnection electrode is smaller than the height Ha of the connection region of the pixel light-emitting device and the interconnection electrode, which causes the interconnection electrode 23 and the common electrode region of the pixel light-emitting device region.
  • the interconnect electrode 24 has stress, which affects the stability and conductivity of the interconnected electrode, thereby affecting the uniformity of the displayed image.
  • a primary object of the present invention is to improve interconnection electrode stability and common electrode conductivity between a pixel driving circuit and a pixel light emitting device of an active driving inorganic light emitting diode display device.
  • the basic principle of the present invention is to simultaneously retain a P-type semiconductor layer and an N-type semiconductor layer at a common electrode position on a substrate where the pixel light-emitting device is located, and the P-type semiconductor layer and the N-type semiconductor layer at the common electrode position are connected by electrodes.
  • the height of the connection region of the common electrode and the interconnection electrode and the height of the connection region of the pixel light-emitting device and the interconnection electrode are the same, the height is the same to ensure the minimum stress of the interconnection electrode, and the stability and conductivity of the interconnection electrode are ensured, so that The conductivity of the common electrode is improved.
  • a portion of the P-type semiconductor layer is etched on the common electrode region on the pixel light-emitting device substrate, and a portion of the P-type semiconductor layer is left, and the P-type semiconductor layer and the N-type semiconductor layer are connected by the electrode, such that
  • the height of the connection region of the common electrode and the interconnection electrode is the same as the height of the connection region of the pixel light-emitting device and the interconnection electrode, and the function of the common electrode is an electron injection function.
  • a portion of the N-type semiconductor layer is etched on the common electrode region on the substrate of the pixel light-emitting device, a portion of the N-type semiconductor layer is retained, and the P-type semiconductor layer and the N-type semiconductor layer are connected by the electrode, such that The height of the connection area of the common electrode and the interconnect electrode
  • the pixel light-emitting device has the same height as the interconnect electrode connection region, and the common electrode functions as a hole injection function.
  • the insulating layer opening area of the common electrode and each of the interconnecting electrode connection regions is the same as the insulating layer opening area of each of the pixel light emitting devices.
  • the opening area of the insulating layer of the common electrode and each of the interconnecting electrode connection regions is different from the insulating layer opening area of each of the pixel light emitting devices.
  • each of the interconnect electrodes on the common electrode has the same interconnect electrode area as each of the pixel light-emitting devices.
  • each of the interconnect electrodes on the common electrode is different in area from the interconnect electrode of each of the pixel light-emitting devices.
  • each pixel light emitting device has a fully enclosed common electrode lead.
  • each pixel light emitting device has a partially enclosed common electrode lead.
  • dummy pixels are present around the effective display area.
  • the interconnect electrodes of the common electrode region form a closed shape.
  • the P-type semiconductor layer and the N-type semiconductor layer are simultaneously retained at the common electrode position on the substrate where the pixel light-emitting device is located, and the P-type semiconductor layer and the N-type semiconductor layer at the common electrode position are connected by electrodes to ensure the common electrode
  • the height of the connection region with the interconnection electrode and the height of the pixel light-emitting device and the interconnection electrode connection region are the same, and the height is the same to ensure the interconnection electrode is subjected to The minimum stress ensures the stability of the interconnect electrodes.
  • connection area of the common electrode and the interconnection electrode is the same as the height of the connection area of the pixel light-emitting device and the interconnection electrode, so that the signal can be transmitted from the substrate where the pixel drive circuit is located to the common electrode through the interconnection electrode, thereby improving the uniformity of conduction. Thereby improving the uniformity of the displayed image.
  • FIG. 1 is a schematic view showing the structure of an active driving inorganic light emitting diode display device of the prior art.
  • FIG. 2 is a schematic view showing the structure of an active driving inorganic light emitting diode display device of the present invention.
  • the common electrode functions as an electron injection.
  • FIG. 3 is a schematic structural view of an active driving inorganic light emitting diode display device of the present invention.
  • the common electrode functions as a hole injection.
  • each of the interconnect electrodes on the common electrode has the same area as the interconnect electrode of each of the pixel light-emitting devices.
  • FIG. 5 is a schematic structural view of an active driving inorganic light emitting diode display device of the present invention. Wherein, each of the interconnect electrodes on the common electrode and the interconnect electrode area of each of the pixel light emitting devices are different.
  • FIG. 6 is a schematic structural view of an active driving inorganic light emitting diode display device of the present invention.
  • the opening area of the insulating layer of the common electrode is the same as the opening area of the insulating layer of each pixel light emitting device.
  • FIG. 7 is a schematic structural view of an active driving inorganic light emitting diode display device of the present invention. Wherein the opening area of the insulating layer of the common electrode and the opening area of the insulating layer of each pixel light emitting device Not the same.
  • FIG. 8 is a partial schematic view of a pixel light emitting device of an active driving inorganic light emitting diode display device of the present invention. There is a partially enclosed common electrode lead for each pixel light emitting device.
  • FIG. 9 is a schematic view showing a portion of a pixel light-emitting device and an interconnection electrode of an active-drive inorganic light-emitting diode display device of the present invention. Among them, there are dummy pixels around the effective display area.
  • Figure 10 is a schematic view showing a portion of a pixel light-emitting device and an interconnection electrode of an active-drive inorganic light-emitting diode display device of the present invention. Wherein the interconnect electrodes of the common electrode region form a closed shape.
  • the pixel light-emitting device includes a substrate on which the pixel light-emitting device is located, an N-type inorganic semiconductor layer 2, a light-emitting inorganic semiconductor layer 3, a P-type inorganic semiconductor layer 4, a P-type electrode 5, and an N-type electrode 6.
  • the pixel driving circuit device includes a substrate 21 on which the pixel driving circuit device is located, and a pixel driving device contact electrode 22.
  • the interconnect electrode 23 of the pixel light emitting device region the interconnect electrode 24 of the common electrode region, the height Ha of the pixel light emitting device and the interconnect electrode connection region, and the height Hc of the common electrode and interconnect electrode connection region.
  • the height Hc of the connection region of the common electrode and the interconnection electrode is equal to the height Ha of the connection region of the pixel light-emitting device and the interconnection electrode, which minimizes the interconnection electrode 23 of the pixel light-emitting device region and The stress of the interconnect electrode 24 of the common electrode region improves the stability and electrical conductivity of the interconnected electrode, thereby increasing the uniformity of the displayed image.
  • FIG. 3 is a schematic structural view of an active driving inorganic light emitting diode display device of the present invention.
  • the difference from the first embodiment is that the common electrode functions as a hole injection.
  • the pixel light-emitting device includes a substrate on which the pixel light-emitting device is located, an N-type inorganic semiconductor layer 2, a light-emitting inorganic semiconductor layer 3, a P-type inorganic semiconductor layer 4, a P-type electrode 5, and an N-type electrode 6.
  • the pixel driving circuit device includes a substrate 21 on which the pixel driving circuit device is located, and a pixel driving device contact electrode 22.
  • interconnect electrodes 23 of the pixel light emitting device regions interconnect electrodes 24 of the common electrode regions, interconnect electrode areas Ba of each of the pixel light emitting devices, and each interconnect electrode area Bc on the common electrode.
  • Each of the interconnect electrode areas Bc on the common electrode is the same as the interconnect electrode area Ba of each of the pixel light-emitting devices.
  • FIG. 5 is a schematic structural view of an active driving inorganic light emitting diode display device of the present invention.
  • the difference from Embodiment 3 is that each of the interconnect electrode areas Bc on the common electrode is different from the interconnect electrode area Ba of each of the pixel light-emitting devices.
  • the pixel light-emitting device includes a substrate on which the pixel light-emitting device is located, an N-type inorganic semiconductor layer 2, a light-emitting inorganic semiconductor layer 3, a P-type inorganic semiconductor layer 4, a P-type electrode 5, and an N-type electrode 6.
  • the pixel driving circuit device includes a substrate 21 on which the pixel driving circuit device is located, and a pixel driving device contact electrode 22.
  • the method further includes: an interconnection electrode 23 of the pixel light emitting device region, and an interconnection electrode of the common electrode region
  • the pole 24 has an insulating layer opening area Ia of each pixel light-emitting device and an insulating layer opening area Ic of the common electrode.
  • the insulating layer opening area Ic of the common electrode and each of the interconnecting electrode connection regions is the same as the insulating layer opening area Ia of each of the pixel light emitting devices.
  • FIG. 7 is a schematic structural view of an active driving inorganic light emitting diode display device of the present invention.
  • the difference from the fifth embodiment is that the insulating layer opening area Ic of the common electrode and each of the interconnecting electrode connection regions is different from the insulating layer opening area Ia of each of the pixel light-emitting devices.
  • FIG. 8 is a partial schematic view of a pixel light emitting device of an active driving inorganic light emitting diode display device of the present invention.
  • the invention comprises an N-type inorganic semiconductor layer 2, a P-type electrode 5, an N-type electrode 6, and a common electrode lead 10. wherein the N-type electrode 6 serves as a common electrode, and each of the pixel light-emitting devices has a partially enclosed common electrode lead 10, which can ensure The uniformity of the common electrode.
  • FIG. 9 is a schematic view showing a portion of a pixel light-emitting device and an interconnection electrode of an active-drive inorganic light-emitting diode display device of the present invention.
  • N-type inorganic semiconductor layer 2 P-type electrode 5, N-type electrode 6, P-type electrode 11 of dummy pixel, interconnection electrode 23 of pixel light-emitting device region, interconnection electrode 24 of common electrode region, dummy pixel (dummy Interconnected electrode 25 of pixel).
  • the 36 pixel light-emitting devices constitute an effective display area, and the dummy pixels can reduce the process unevenness in the device manufacturing process and ensure the uniformity of the effective display area.
  • Figure 10 is a schematic view showing a portion of a pixel light-emitting device and an interconnection electrode of an active-drive inorganic light-emitting diode display device of the present invention. Including: N-type inorganic semiconductor layer 2, P-type electrode 5, N The type electrode 6, the interconnection electrode 23 of the pixel light-emitting device region, and the interconnection electrode 24 of the common electrode region. As can be seen from the figure, the interconnect electrode 24 of the common electrode region forms a closed shape.

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Abstract

本发明公开了一种主动驱动无机发光二极管显示器件结构，其中公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，高度相同保证了互连电极的应力最小，保证了互连电极的稳定性和导电性，这样就提高了公共电极的导电性。

Description

一种主动驱动无机发光二极管显示器件结构 技术领域
本发明涉及一种主动驱动无机发光二极管显示器件结构，特别是提高像素驱动电路和像素发光器件之间互连电极稳定性和公共电极导电性的无机发光二极管显示器件结构。
背景技术
微型显示器是微型投影仪和穿戴式显示的核心部件。当前微型显示器产品主要采用两种技术：硅上液晶显示装置(LCOS)和数字光处理技术(DLP)。这两种技术都属于反射型显示技术，光利用率很低，而且需要采用额外的光学系统，这样就增加了投影仪和近眼显示的体积和成本。最近出现的一种无机发光二极管显示技术属于主动发光技术，很有可能取代现有产品。微型显示器与普通平板显示器的一个主要区别是其有效显示面积小，即显示分辨率高，像素间隔小，一般像素尺寸在几微米到十几微米。随着显示分辨率的提高，对无机发光二极管显示器件的互连电极的稳定性和公共电极的导电性要求越来越高。
图1是现有技术的主动驱动无机发光二极管显示器件结构示意图。其中，像素发光器件包括：像素发光器件所在衬底1、N型无机半导体层2、发光无机半导体层3、P型无机半导体层4、P型电极5、N型电极6。像素驱动电路器件包括：像素驱动电路器件所在衬底21、像素驱动器件接触电极22。还包括：像素发光器件区域的互连电极23，公共电极区域的互连电 极24，像素发光器件与互连电极连接区域的高度Ha，公共电极与互连电极连接区域的高度Hc。从图1可以看出，公共电极与互连电极连接区域的高度Hc小于像素发光器件与互连电极连接区域的高度Ha，这些就造成了像素发光器件区域的互连电极23和公共电极区域的互连电极24存在应力，影响互联电极的稳定性和导电性，进而影响显示图像的均匀性。
发明内容
本发明的主要目的是提高主动驱动无机发光二极管显示器件的像素驱动电路和像素发光器件之间互连电极稳定性和公共电极导电性。
本发明的基本原理是：在像素发光器件所在衬底上的公共电极位置上同时保留P型半导体层和N型半导体层，公共电极位置的P型半导体层和N型半导体层通过电极连接起来，这样公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，高度相同保证了互连电极的应力最小，保证了互连电极的稳定性和导电性，这样就提高了公共电极的导电性。
根据本发明的一个方面，在像素发光器件衬底上的公共电极区域，刻蚀部分P型半导体层，保留部分P型半导体层，通过电极把P型半导体层和N型半导体层连接起来，这样公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，公共电极所起功能是电子注入功能。
根据本发明的一个方面，在像素发光器件衬底上的公共电极区域，刻蚀部分N型半导体层，保留部分N型半导体层，通过电极把P型半导体层和N型半导体层连接起来，这样公共电极与互连电极连接区域的高度和 像素发光器件与互连电极连接区域的高度相同，公共电极所起功能是空穴注入功能。
根据本发明的一个方面，公共电极与每个互联电极连接区域的绝缘层开口面积与每个像素发光器件的绝缘层开口面积相同。
根据本发明的一个方面，公共电极与每个互联电极连接区域的绝缘层开口面积与每个像素发光器件的绝缘层开口面积不同。
根据本发明的一个方面，公共电极上的每个互连电极与每个像素发光器件的互连电极面积相同。
根据本发明的一个方面，公共电极上的每个互连电极与每个像素发光器件的互连电极面积不同。
根据本发明的一个方面，每个像素发光器件存在全部封闭的公共电极引线。
根据本发明的一个方面，每个像素发光器件存在部分封闭的公共电极引线。
根据本发明的一个方面，有效显示区域的周围存在虚设像素。
根据本发明的一个方面，公共电极区域的互连电极形成闭合形状。
本发明的积极效果在于：
1.在像素发光器件所在衬底上的公共电极位置上同时保留P型半导体层和N型半导体层，而且公共电极位置的P型半导体层和N型半导体层通过电极连接起来，保证了公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，高度相同保证了互连电极承受的 应力最小，保证了互连电极的稳定性。
2.公共电极与互连电极连接区域的高度和像素发光器件与互连电极连接区域的高度相同，可以保证信号从像素驱动电路所在基板通过互连电极传输到公共电极上，提高导电均匀性，进而提高显示图像的均匀性。
附图说明
图1是现有技术的主动驱动无机发光二极管显示器件结构示意图。
图2是本发明的主动驱动无机发光二极管显示器件结构示意图。其中，公共电极起电子注入功能。
图3是本发明的主动驱动无机发光二极管显示器件结构示意图。其中，公共电极起空穴注入功能。
图4是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，公共电极上的每个互连电极与每个像素发光器件的互连电极面积相同。
图5是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，公共电极上的每个互连电极与每个像素发光器件的互连电极面积不相同。
图6是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，公共电极的绝缘层开口面积与每个像素发光器件的绝缘层开口面积相同。
图7是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，公共电极的绝缘层开口面积与每个像素发光器件的绝缘层开口面积 不相同。
图8是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件部分示意图。其中，每个像素发光器件存在部分封闭的公共电极引线。
图9是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件和互连电极部分示意图。其中，有效显示区域的周围存在虚设像素。
图10是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件和互连电极部分示意图。其中，公共电极区域的互连电极形成闭合形状。
具体实施方式
下面结合附图描述本发明的具体实施方式。
实施例一
图2是本发明的主动驱动无机发光二极管显示器件结构示意图。其中，公共电极起电子注入功能。其中，像素发光器件包括：像素发光器件所在衬底1、N型无机半导体层2、发光无机半导体层3、P型无机半导体层4、P型电极5、N型电极6。像素驱动电路器件包括：像素驱动电路器件所在衬底21、像素驱动器件接触电极22。还包括：像素发光器件区域的互连电极23，公共电极区域的互连电极24，像素发光器件与互连电极连接区域的高度Ha，公共电极与互连电极连接区域的高度Hc。从图2可以看出，公共电极与互连电极连接区域的高度Hc等于像素发光器件与互连电极连接区域的高度Ha，这就最大程度地减小了像素发光器件区域的互连电极23和公共电极区域的互连电极24的应力，提高互联电极的稳定性和电导性，进而增加了显示图像的均匀性。
实施例二
图3是本发明的主动驱动无机发光二极管显示器件结构示意图。与实施例一的区别是公共电极起空穴注入功能。
实施例三
图4是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，像素发光器件包括：像素发光器件所在衬底1、N型无机半导体层2、发光无机半导体层3、P型无机半导体层4、P型电极5、N型电极6。像素驱动电路器件包括：像素驱动电路器件所在衬底21、像素驱动器件接触电极22。还包括：像素发光器件区域的互连电极23，公共电极区域的互连电极24，每个像素发光器件的互连电极面积Ba，公共电极上的每个互连电极面积Bc。公共电极上的每个互连电极面积Bc与每个像素发光器件的互连电极面积Ba相同。
实施例四
图5是本发明的一种主动驱动无机发光二极管显示器件结构示意图。与实施例三的区别是公共电极上的每个互连电极面积Bc与每个像素发光器件的互连电极面积Ba不相同。
实施例五
图6是本发明的一种主动驱动无机发光二极管显示器件结构示意图。其中，像素发光器件包括：像素发光器件所在衬底1、N型无机半导体层2、发光无机半导体层3、P型无机半导体层4、P型电极5、N型电极6。像素驱动电路器件包括：像素驱动电路器件所在衬底21、像素驱动器件接触电极22。还包括：像素发光器件区域的互连电极23，公共电极区域的互连电 极24，每个像素发光器件的绝缘层开口面积Ia，公共电极的绝缘层开口面积Ic。公共电极与每个互连电极连接区域的绝缘层开口面积Ic与每个像素发光器件的绝缘层开口面积Ia相同。
实施例六
图7是本发明的一种主动驱动无机发光二极管显示器件结构示意图。与实施例五的区别是公共电极与每个互连电极连接区域的绝缘层开口面积Ic与每个像素发光器件的绝缘层开口面积Ia不相同。
实施例七
图8是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件部分示意图。包括：N型无机半导体层2、P型电极5、N型电极6、公共电极引线10，其中，N型电极6作为公共电极，每个像素发光器件存在部分封闭的公共电极引线10，可以保证公共电极的均匀性。
实施例八
图9是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件和互连电极部分示意图。包括：N型无机半导体层2、P型电极5、N型电极6、虚设像素的P型电极11、像素发光器件区域的互连电极23、公共电极区域的互连电极24、虚设像素(dummy pixel)的互连电极25。从图中可以看出，36个像素发光器件组成显示有效显示区域，而虚设像素可以减少器件制作过程中工艺的不均匀性，保证有效显示区域的均匀性。
实施例九
图10是本发明的一种主动驱动无机发光二极管显示器件的像素发光器件和互连电极部分示意图。包括：N型无机半导体层2、P型电极5、N 型电极6、像素发光器件区域的互连电极23、公共电极区域的互连电极24。从图中可以看出，公共电极区域的互连电极24形成闭合形状。
以上针对本发明的优选实施方式进行了描述，本领域技术人员应该理解，在不脱离本发明的精神和权利要求书的范围基础上可以进行各种变化和修改。

Claims (10)

  1. 一种主动驱动无机发光二极管显示器件结构，包括多个像素驱动电路器件和多个像素发光器件，像素驱动器件和像素发光器件位于不同衬底，每个像素驱动电路器件通过互连电极可以实现对每个像素发光器件的独立控制，其特征在于，在像素发光器件所在的衬底上，公共电极与互连电极连接区域的高度和有效显示区每个像素发光器件与互连电极连接区域的高度相同。
  2. 根据权利要求1所述，其特征在于，高度相同是相对于像素发光器件所在衬底。
  3. 根据权利要求1-2所述，其特征在于，在像素发光器件所在的衬底上，公共电极位置的P型半导体层和N型半导体层通过电极形成电学连接。
  4. 根据权利要求1-3所述，其特征在于，公共电极所起功能是电子注入功能。
  5. 根据权利要求1-3所述，其特征在于，公共电极所起功能是空穴注入功能。
  6. 根据权利要求1-5所述，其特征在于，公共电极与每个互连电极连接区域的绝缘层开口面积与每个像素发光器件的绝缘层开口面积相同。
  7. 根据权利要求1-5所述，其特征在于，公共电极上的每个互连电极与每个像素发光器件的互连电极面积相同。
  8. 根据权利要求1-5所述，其特征在于，公共电极上的每个互连电极与每个像素发光器件的互连电极面积不同。
  9. 根据权利要求1-5所述，其特征在于，每个像素发光器件存在全闭合或者部分闭合的公共电极引线。
  10. 根据权利要求1-5所述，其特征在于，由像素发光器件组成的有效 显示区域的周围存在虚设像素。
PCT/CN2014/001191 2014-12-30 2014-12-30 一种主动驱动无机发光二极管显示器件结构 WO2016106472A1 (zh)

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