WO2016101398A1 - 防止oled材料裂解的坩埚 - Google Patents
防止oled材料裂解的坩埚 Download PDFInfo
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- WO2016101398A1 WO2016101398A1 PCT/CN2015/072554 CN2015072554W WO2016101398A1 WO 2016101398 A1 WO2016101398 A1 WO 2016101398A1 CN 2015072554 W CN2015072554 W CN 2015072554W WO 2016101398 A1 WO2016101398 A1 WO 2016101398A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Definitions
- the present invention relates to the field of process for OLED display devices, and more particularly to a crucible for preventing cracking of OLED materials.
- the flat panel display device has many advantages such as thin body, power saving, no radiation, and has been widely used.
- the existing flat panel display devices mainly include a liquid crystal display (LCD) and an organic light emitting display (OLED).
- LCD liquid crystal display
- OLED organic light emitting display
- 3D display and other advantages, known as "dream display”, is consistently recognized as the mainstream technology of the next generation display, has been favored by major display manufacturers.
- An OLED display device is generally composed of an anode, a cathode, and an organic electroluminescent material layer sandwiched between an anode and a cathode.
- the organic electroluminescent material layer further includes a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. And electron injection layer.
- the luminescence mechanism of the OLED display device is to inject electrons and holes from the cathode and the yang respectively, and the injected electrons and holes are recombined in the luminescent layer to excite the luminescent layer molecules to generate singlet excitons, singlet excitons.
- the radiation is attenuated to emit light.
- the main way to prepare the mainstream of OLED display devices is vacuum heating coating, that is, heating the OLED material in a vacuum chamber to sublimate or melt vaporize into steam at a certain temperature, and deposit through the open pores on the metal mask. On the substrate.
- the temperature difference between the point evaporation sources is often uneven, and the OLED material in the crucible cannot be consumed and the material is easily cracked.
- a conventional crucible for OLED material evaporation includes a crucible body 100 and a cover 200 that is disposed at an open end of the crucible body 100 , wherein the crucible body 100 is configured to receive the OLED material 300 , and the bottom of the crucible body 100 is The wall thickness of the side walls is substantially uniform.
- Figure 1 shows the OLED material is abundant and the liquid level is high. The temperature at the bottom of the body 100 is t1, the evaporation temperature of the liquid surface of the OLED material is t2, the temperature at the top of the ruthenium body 100 is t3, and the cleavage of the OLED material is shown.
- the temperature is T, because the upper and lower temperatures of the crucible body 100 are different, generally T>t3>t2>t1, and experimentally verified, as shown in FIG. 2, the OLED material in the existing crucible body 100 is 65 g.
- the evaporation rate is stable at At the same time, the evaporation temperature t2 of the liquid surface of the OLED material is stabilized at 375 ° C, and the temperature t3 at the top of the crucible body 100 is 403 ° C, which is smaller than the cracking temperature T405 ° C. As shown in FIG.
- the OLED material is continuously consumed, and to maintain a certain evaporation rate, the evaporation temperature t2 of the liquid surface of the OLED material needs to be higher and higher.
- h is the lowest level allowed for the normal evaporation of the OLED material 300 in the body 100 when the OLED material at the top of the body 100 is at the critical temperature of cracking. Height, there will be t3>T>t2>t1.
- the object of the present invention is to provide a crucible for preventing cracking of an OLED material, which can solve the problem that the OLED material in the crucible is easily cracked and wasted in the evaporation process, so that the evaporation process is stably operated to ensure the quality of the OLED display device.
- the present invention provides a crucible for preventing cracking of an OLED material, comprising: a crucible body for accommodating the OLED material; and a cover covering the open end of the crucible body;
- the bottom of the crucible body has a lifting structure, and the height of the lowest liquid level of the OLED material in the crucible is raised by the lifting structure.
- the height of the top surface of the lifting structure to the bottom surface of the crucible body is greater than or equal to the lowest liquid level allowed by the normal evaporation of the OLED material in the crucible, so that the OLED material (3) is completely distilled off at a temperature lower than the cracking temperature.
- the lifting structure is a convex portion extending upward from the bottom surface of the body itself, and is realized by reducing the digging depth of the body itself.
- the lifting structure is an overhead metal plate fixed to the bottom of the crucible body.
- the metal plate is fixed to the bottom of the crucible body by welding.
- the lifting structure includes a thermally conductive filler material filled in the bottom of the crucible body and a bottom plate disposed on the filler material.
- the lifting structure comprises a thermal conductive bracket disposed on the bottom of the crucible body and a bottom plate disposed on the bracket.
- the lifted structure enables the in-situ OLED material to be completely distilled off at a temperature below the cracking temperature of 8 ° C to 15 ° C.
- the lift-up structure enables the in-furnace OLED material to be completely distilled off at a temperature lower than the cracking temperature by 10 °C.
- the invention also provides a crucible for preventing cracking of an OLED material, comprising a device for accommodating an OLED a body of the material and a cover covering the open end of the body; the bottom of the body has a lifting structure, and the height of the lowest liquid level of the OLED material in the crucible is raised by the lifting structure.
- the height of the top surface of the lifting structure to the bottom surface of the crucible body is greater than or equal to the minimum liquid level allowed by the normal evaporation of the OLED material in the crucible, so that the OLED material is completely distilled out at a temperature lower than the cracking temperature;
- the lifting structure is a convex portion formed by extending upward from a bottom surface of the body itself, and is realized by reducing the digging depth of the body itself;
- the erbium OLED material can be completely distilled out at a temperature lower than the cracking temperature by 8 ° C to 15 ° C by the lift structure.
- the beneficial effects of the present invention provide a crucible for preventing cracking of an OLED material.
- the OLED material can be made at a temperature lower than the cracking temperature. Evaporation solves the problem that the OLED material in the crucible is easily cracked and material wasted during the evaporation process, so that the evaporation process is stably operated to ensure the quality of the OLED display device.
- FIG. 1 is a schematic cross-sectional view showing a conventional crucible in a state where a OLED material is abundant;
- FIG. 3 is a schematic cross-sectional view of a conventional crucible in a state where the OLED material is in a small state;
- FIG. 4 is a schematic cross-sectional view showing a first embodiment of a crucible for preventing cracking of an OLED material according to the present invention
- FIG. 5 is a cross-sectional structural view showing a second embodiment of a crucible for preventing cracking of an OLED material according to the present invention
- FIG. 6 is a schematic cross-sectional view showing a third embodiment of a crucible for preventing cracking of an OLED material according to the present invention.
- Figure 7 is a cross-sectional structural view showing a fourth embodiment of the crucible for preventing cracking of an OLED material according to the present invention. intention;
- Figure 8 is a graph showing the evaporation temperature and evaporation rate of the liquid level of the OLED material in the crucible of the present invention to prevent cracking of the OLED material.
- FIG. 4 is a cross-sectional structural diagram of a first embodiment of a crucible for preventing cracking of an OLED material according to the present invention.
- the crucible for preventing cracking of the OLED material includes a crucible body 1 for accommodating the OLED material 3, and a lid 2 covering the open end of the crucible body 1.
- the bottom of the crucible body 1 has a lifting structure 11 through which the height of the lowest liquid level of the OLED material 3 in the crucible is raised.
- the height H of the top surface of the lifting structure 11 to the bottom surface of the crucible body 1 is greater than or equal to the lowest liquid level allowed by the normal evaporation of the OLED material 3 in the crucible, and the top surface of the lifting structure 11 forms a bottom surface of the OLED material, so that The OLED material 3 is completely distilled off at a temperature below the cracking temperature.
- the lifting structure 11 is a convex portion extending upward from the bottom surface of the cymbal body 1 itself, and is realized by reducing the digging depth of the cymbal body 1 itself.
- the temperature of the lowest liquid surface of the OLED material 3 is t2
- the temperature of the top of the crucible body 1 is t3
- the cracking temperature of the OLED material is T, when the OLED is used.
- the OLED material 3 As the evaporation process progresses, the OLED material 3 is continuously evaporated and consumed, and a certain evaporation rate is maintained, and the evaporation temperature t2 of the liquid crystal surface of the OLED material 3 is also higher and higher, when the OLED material 3 is consumed to the lowest liquid level thereof.
- the height is H
- the material at the top of the crucible body 1 is near cracking, but since the lifting structure 11 has raised the lowest liquid level of the OLED material 3 to H, the OLED material 3 inside the body of the crucible 1 has evaporated and consumed before the OLED material is cracked. Finished.
- the OLED material in the body 1 is only 5 g, and the evaporation rate is stable.
- the cracking temperature of the OLED material is maintained T>the temperature t3 of the top of the body 1>the evaporation temperature t2 of the liquid surface of the OLED material 3>the temperature t1 of the lowest liquid surface of the OLED material 3, and the evaporation temperature t2 of the liquid surface of the OLED material 3 is stable 377 ⁇ 2°C, until the OLED material 3 is completely evaporated, the temperature t3 at the top of the ⁇ body 1 is still in the safe temperature range, so that the OLED material 3 can be completely distilled out at a temperature lower than the cracking temperature, and the evaporation process is solved.
- the lifting structure 11 can cause the OLED material 3 in the crucible to be completely distilled out at a temperature lower than the cracking temperature of 8 ° C to 15 ° C.
- the Raney OLED is made. Material 3 was completely distilled off at a temperature 10 ° C below the cracking temperature.
- FIG. 5 is a cross-sectional structural diagram of a second embodiment of a crucible for preventing cracking of an OLED material according to the present invention.
- the second embodiment is different from the first embodiment in that the lifting structure 11 is an overhead metal plate fixed to the bottom of the crucible body 1 by welding. The metal plate forms a bottom surface of the OLED material.
- the rest of the structure and the lifting structure 11 play the same role as the first embodiment, and will not be described again here.
- FIG. 6 is a cross-sectional structural diagram of a third embodiment of a crucible for preventing cracking of an OLED material according to the present invention.
- the third embodiment is different from the first embodiment in that the lifting structure 11 includes a heat-conductive filler material 111 filled in the bottom of the crucible body 1 and a bottom plate 113 provided on the filler material 111.
- the bottom plate 113 is formed to receive a bottom surface of the OLED material.
- the rest of the structure and the lifting structure 11 play the same role as the first embodiment, and will not be described again here.
- FIG. 7 is a cross-sectional structural diagram of a fourth embodiment of a crucible for preventing cracking of an OLED material according to the present invention.
- the fourth embodiment is different from the first embodiment in that the lifting structure 11 includes a thermal conductive bracket 115 disposed at the bottom of the cymbal body 1 and a bottom plate 117 disposed on the bracket 115.
- the bottom plate 117 is formed to receive a bottom surface of the OLED material.
- the rest of the structure and the lifting structure 11 play the same role as the first embodiment, and will not be described again here.
- the crucible for preventing cracking of the OLED material of the present invention can be completely distilled out at a temperature lower than the cracking temperature by providing a lifting structure capable of raising the lowest liquid level of the OLED material at the bottom of the crucible body.
- the OLED material in the crucible is easily cracked and the material is wasted, so that the evaporation process is stably operated to ensure the quality of the OLED display device.
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Abstract
本发明提供一种防止OLED材料裂解的坩埚,包括一用于容纳OLED材料(3)的坩埚本体(1)、及盖设于所述坩埚本体(1)开口端的盖子(2);所述坩埚本体(1)底部具有一抬升结构(11),通过所述抬升结构(11)抬升坩埚内OLED材料(3)最低液面的高度,使得OLED材料(3)在低于裂解温度的温度下全部蒸出。本发明能够解决蒸镀过程中坩埚内的OLED材料容易裂解及材料浪费的问题,使得蒸镀过程稳定运行,保证OLED显示器件的品质。
Description
本发明涉及OLED显示器件的制程领域,尤其涉及一种防止OLED材料裂解的坩埚。
平板显示器件具有机身薄、省电、无辐射等众多优点,得到了广泛的应用。现有的平板显示器件主要包括液晶显示器件(Liquid Crystal Display,LCD)及有机电致发光显示器件(Organic Light Emitting Display,OLED)。其中,OLED显示器件相较于LCD,不仅具有十分优异的显示性能,还具有全固态、自发光、结构简单、超轻薄、响应速度快、宽视角、室温工作、低功耗及易于实现柔性显示和3D显示等优点,被誉为“梦幻显示器”,一致被公认为是下一代显示的主流技术,得到了各大显示器厂家的青睐。
OLED显示器件通常由阳极、阴极、以及夹在阳极和阴极之间的有机电致发光材料层构成,有机电致发光材料层又包括空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。OLED显示器件的发光机理是从阴、阳两级分别注入电子和空穴,被注入的电子和空穴经传输在发光层内复合,从而激发发光层分子产生单态激子,单态激子辐射衰减而发光。
目前,制备OLED显示器件主流的主要方式是真空加热镀膜,即在真空腔体内使用坩埚加热OLED材料,使其在一定温度下升华或者熔融汽化成蒸汽,透过金属掩膜板上的开孔沉积在基板上。
使用点蒸发源进行OLED材料蒸镀的情况下,常常会因为点蒸发源各处的温差不均,导致坩埚内的OLED材料无法消耗完和材料易裂解等问题。
请参阅图1,现有的用于OLED材料蒸镀的坩埚包括坩埚本体100及盖设于坩埚本体100开口端的盖子200,其中坩埚本体100用于容纳OLED材料300,该坩埚本体100的底部与侧壁的壁厚基本均匀一致。图1所示为OLED材料充裕,液面高度较高的情况,设坩埚本体100底部的温度为t1、OLED材料液面的蒸发温度为t2、坩埚本体100顶部的温度为t3、OLED材料的裂解温度为T,由于坩埚本体100的上、下温度有差异,一般T>t3>t2>t1,经实验验证,如图2所示,在该现有的坩埚本体100内的OLED材料为65g,蒸镀速率稳定在时,OLED材料液面的蒸发温度t2稳定在375℃,坩埚本体100顶部的温度t3为403℃,小于裂解温度T405℃。
如图3所示,随着蒸镀过程的进行,OLED材料不断消耗,要保持一定的蒸镀速率,OLED材料液面的蒸发温度t2也需要越来越高。当OLED材料消耗至距离坩埚本体100底面的高度等于或小于h时,h为位于坩埚本体100顶部的OLED材料处于裂解的临界温度时,坩埚本体100内的OLED材料300正常蒸发允许的最低液面高度,会出现t3>T>t2>t1,经实验验证,当坩埚本体100内的OLED材料减少至40g或以下时,坩埚本体100顶部的温度t3为410℃,大于裂解温度T405℃,导致OLED材料在坩埚盖子200的出口处发生裂解,且剩余的OLED材料均不可用,从而破坏蒸镀过程的稳定性,造成OLED材料的浪费,影响OLED显示器件的品质。
发明内容
本发明的目的在于提供一种防止OLED材料裂解的坩埚,能够解决蒸镀过程中坩埚内的OLED材料容易裂解及材料浪费的问题,使得蒸镀过程稳定运行,保证OLED显示器件的品质。
为实现上述目的,本发明提供的一种防止OLED材料裂解的坩埚,包括一用于容纳OLED材料的坩埚本体、及盖设于所述坩埚本体开口端的盖子;
所述坩埚本体底部具有一抬升结构,通过所述抬升结构抬升坩埚内OLED材料最低液面的高度。
所述抬升结构的顶面到坩埚本体底面的高度大于或等于坩埚内OLED材料正常蒸发允许的最低液面高度,使得OLED材料(3)在低于裂解温度的温度下全部蒸出。
所述抬升结构为自坩埚本体自身的底面向上延伸形成的凸起部,通过降低坩埚本体自身的挖掘深度来实现。
所述抬升结构为固设于坩埚本体底部的架空的金属板。
所述金属板通过焊接固设于坩埚本体底部。
所述抬升结构包括填充于坩埚本体底部的导热性好的填充材料及设于填充材料上的底板。
所述抬升结构包括设置于坩埚本体底部的导热性支架及设于支架上的底板。通过所述抬升结构能够使得坩埚内OLED材料在低于裂解温度8℃-15℃的温度下全部蒸出。
通过所述抬升结构能够使得坩埚内OLED材料在低于裂解温度10℃的温度下全部蒸出。
本发明还提供一种防止OLED材料裂解的坩埚,包括一用于容纳OLED
材料的坩埚本体、及盖设于所述坩埚本体开口端的盖子;所述坩埚本体底部具有一抬升结构,通过所述抬升结构抬升坩埚内OLED材料最低液面的高度。
其中,所述抬升结构的顶面到坩埚本体底面的高度大于或等于坩埚内OLED材料正常蒸发允许的最低液面高度,使得OLED材料在低于裂解温度的温度下全部蒸出;
其中,所述抬升结构为自坩埚本体自身的底面向上延伸形成的凸起部,通过降低坩埚本体自身的挖掘深度来实现;
其中,通过所述抬升结构能够使得坩埚内OLED材料在低于裂解温度8℃-15℃的温度下全部蒸出。
本发明的有益效果,本发明提供的一种防止OLED材料裂解的坩埚,通过在坩埚本体底部设置能够抬升OLED材料最低液面高度的抬升结构,能够使得OLED材料在低于裂解温度的温度下全部蒸出,解决蒸镀过程中坩埚内的OLED材料容易裂解及材料浪费的问题,使得蒸镀过程稳定运行,保证OLED显示器件的品质。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为现有的坩埚在OLED材料充裕状态下的剖面示意图;
图2为显示现有的坩埚内OLED材料液面的蒸发温度与蒸镀速率的曲线图;
图3为现有的坩埚在OLED材料较少状态下的剖面示意图;
图4为本发明防止OLED材料裂解的坩埚的第一实施例的剖面结构示意图;
图5为本发明防止OLED材料裂解的坩埚的第二实施例的剖面结构示意图;
图6为本发明防止OLED材料裂解的坩埚的第三实施例的剖面结构示意图;
图7为本发明防止OLED材料裂解的坩埚的第四实施例的剖面结构示
意图;
图8为显示本发明防止OLED材料裂解的坩埚内OLED材料液面的蒸发温度与蒸镀速率的曲线图。
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4,为本发明防止OLED材料裂解的坩埚的第一实施例的剖面结构示意图。该防止OLED材料裂解的坩埚包括一用于容纳OLED材料3的坩埚本体1、及盖设于所述坩埚本体1开口端的盖子2。
所述坩埚本体1底部具有一抬升结构11,通过所述抬升结构11抬升坩埚内OLED材料3最低液面的高度。所述抬升结构11的顶面到坩埚本体1底面的高度H大于或等于坩埚内OLED材料3正常蒸发允许的最低液面高度,该抬升结构11的顶面形成坩埚容置OLED材料的底面,使得OLED材料3在低于裂解温度的温度下全部蒸出。
在该第一实施例中,所述抬升结构11为自坩埚本体1自身的底面向上延伸形成的凸起部,通过降低坩埚本体1自身的挖掘深度来实现。
使用本发明的坩埚进行蒸镀,设OLED材料3最低液面的温度t1、OLED材料3液面的蒸发温度为t2、坩埚本体1顶部的温度为t3、OLED材料的裂解温度为T,当OLED材料3的液面高度较高时,由于坩埚本体1的上、下温度有差异,一般T>t3>t2>t1。随着蒸镀过程的进行,OLED材料3不断蒸发、消耗,要保持一定的蒸镀速率,OLED材料3液面的蒸发温度t2也越来越高,当OLED材料3消耗至其最低液面的高度为H时,坩埚本体1顶部的材料临近裂解,但由于抬升结构11已将OLED材料3的最低液面抬升至H,在OLED材料裂解前,坩埚1本体内部的OLED材料3已经蒸发、消耗完毕。
如图8所示,经实验验证,采用抬升结构11将OLED材料3最低液面的高度抬升后,坩埚本体1内的OLED材料仅为5g,蒸镀速率稳定在时,仍保持OLED材料的裂解温度T>坩埚本体1顶部的温度t3>OLED材料3液面的蒸发温度t2>OLED材料3最低液面的温度t1,OLED材料3液面的蒸发温度t2稳定在377±2℃,直至OLED材料3全部正常蒸发完,坩埚本体1顶部的温度t3仍处于安全温度范围内,从而能够使得OLED材料3在低于裂解温度的温度下全部蒸出,解决蒸镀过程中坩埚内的OLED材料容易裂解及材料浪费的问题,使得蒸镀过程稳定运行,保证OLED显示
器件的品质。一般情况下,所述抬升结构11能够使得坩埚内OLED材料3在低于裂解温度8℃-15℃的温度下全部蒸出,优选的,通过调整所述抬升结构11的高度,使坩埚内OLED材料3在低于裂解温度10℃的温度下全部蒸出。
请参阅图5,为本发明防止OLED材料裂解的坩埚的第二实施例的剖面结构示意图。该第二实施例与第一实施例的不同在于,所述抬升结构11为通过焊接的方式固设于坩埚本体1底部的架空的金属板。该金属板形成坩埚容置OLED材料的底面。其余的结构及抬升结构11所起的作用与第一实施例相同,此处不再赘述。
请参阅图6,为本发明防止OLED材料裂解的坩埚的第三实施例的剖面结构示意图。该第三实施例与第一实施例的不同在于,所述抬升结构11包括填充于坩埚本体1底部的导热性好的填充材料111及设于填充材料111上的底板113。该底板113形成坩埚容置OLED材料的底面。其余的结构及抬升结构11所起的作用与第一实施例相同,此处不再赘述。
请参阅图7,为本发明防止OLED材料裂解的坩埚的第四实施例的剖面结构示意图。该第四实施例与第一实施例的不同在于,所述抬升结构11包括设置于坩埚本体1底部的导热性支架115及设于支架115上的底板117。该底板117形成坩埚容置OLED材料的底面。其余的结构及抬升结构11所起的作用与第一实施例相同,此处不再赘述。
综上所述,本发明的防止OLED材料裂解的坩埚,通过在坩埚本体底部设置能够抬升OLED材料最低液面高度的抬升结构,能够使得OLED材料在低于裂解温度的温度下全部蒸出,解决蒸镀过程中坩埚内的OLED材料容易裂解及材料浪费的问题,使得蒸镀过程稳定运行,保证OLED显示器件的品质。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (11)
- 一种防止OLED材料裂解的坩埚,包括一用于容纳OLED材料的坩埚本体、及盖设于所述坩埚本体开口端的盖子;所述坩埚本体底部具有一抬升结构,通过所述抬升结构抬升坩埚内OLED材料最低液面的高度。
- 如权利要求1所述的防止OLED材料裂解的坩埚,其中,所述抬升结构的顶面到坩埚本体底面的高度大于或等于坩埚内OLED材料正常蒸发允许的最低液面高度,使得OLED材料在低于裂解温度的温度下全部蒸出。
- 如权利要求2所述的防止OLED材料裂解的坩埚,其中,所述抬升结构为自坩埚本体自身的底面向上延伸形成的凸起部,通过降低坩埚本体自身的挖掘深度来实现。
- 如权利要求2所述的防止OLED材料裂解的坩埚,其中,所述抬升结构为固设于坩埚本体底部的架空的金属板。
- 如权利要求4所述的防止OLED材料裂解的坩埚,其中,所述金属板通过焊接固设于坩埚本体底部。
- 如权利要求2所述的防止OLED材料裂解的坩埚,其中,所述抬升结构包括填充于坩埚本体底部的导热性好的填充材料及设于填充材料上的底板。
- 如权利要求2所述的防止OLED材料裂解的坩埚,其中,所述抬升结构包括设置于坩埚本体底部的导热性支架及设于支架上的底板。
- 如权利要求2所述的防止OLED材料裂解的坩埚,其中,通过所述抬升结构能够使得坩埚内OLED材料在低于裂解温度8℃-15℃的温度下全部蒸出。
- 如权利要求8所述的防止OLED材料裂解的坩埚,其中,通过所述抬升结构能够使得坩埚内OLED材料在低于裂解温度10℃的温度下全部蒸出。
- 一种防止OLED材料裂解的坩埚,包括一用于容纳OLED材料的坩埚本体、及盖设于所述坩埚本体开口端的盖子;所述坩埚本体底部具有一抬升结构,通过所述抬升结构抬升坩埚内OLED材料最低液面的高度。其中,所述抬升结构的顶面到坩埚本体底面的高度大于或等于坩埚内OLED材料正常蒸发允许的最低液面高度,使得OLED材料在低于裂解温度的温度下全部蒸出;其中,所述抬升结构为自坩埚本体自身的底面向上延伸形成的凸起部, 通过降低坩埚本体自身的挖掘深度来实现;其中,通过所述抬升结构能够使得坩埚内OLED材料在低于裂解温度8℃-15℃的温度下全部蒸出。
- 如权利要求10所述的防止OLED材料裂解的坩埚,其中,通过所述抬升结构能够使得坩埚内OLED材料在低于裂解温度10℃的温度下全部蒸出。
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| KR101368897B1 (ko) * | 2013-01-15 | 2014-03-03 | 엘아이지에이디피 주식회사 | 도가니 어셈블리, 도가니 어셈블리의 가열장치 제어방법 및 도가니 어셈블리를 갖는 박막증착장비 |
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| CN103556118B (zh) * | 2013-10-12 | 2016-03-02 | 深圳市华星光电技术有限公司 | 蒸镀装置 |
| CN103938160A (zh) * | 2014-03-06 | 2014-07-23 | 京东方科技集团股份有限公司 | 一种坩埚 |
| CN103966555B (zh) * | 2014-05-28 | 2016-04-20 | 深圳市华星光电技术有限公司 | 蒸镀源加热装置 |
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| US20090081365A1 (en) * | 2007-09-20 | 2009-03-26 | Cok Ronald S | Deposition apparatus for temperature sensitive materials |
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