WO2016098375A1 - 半導体ウェーハの検査装置及び半導体ウェーハの検査方法 - Google Patents
半導体ウェーハの検査装置及び半導体ウェーハの検査方法 Download PDFInfo
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- WO2016098375A1 WO2016098375A1 PCT/JP2015/070855 JP2015070855W WO2016098375A1 WO 2016098375 A1 WO2016098375 A1 WO 2016098375A1 JP 2015070855 W JP2015070855 W JP 2015070855W WO 2016098375 A1 WO2016098375 A1 WO 2016098375A1
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- semiconductor wafer
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- preheating
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
- G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
- G01R31/2875—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06705—Apparatus for holding or moving single probes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
- G01R31/2862—Chambers or ovens; Tanks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Definitions
- the present invention relates to a semiconductor wafer inspection apparatus and a semiconductor wafer inspection method, and more particularly to a semiconductor wafer inspection apparatus and a semiconductor wafer inspection method for inspecting electrical characteristics of an electronic device provided on the semiconductor wafer.
- a thin plate-like semiconductor wafer is subjected to various processes to manufacture a plurality of chips having electronic devices.
- Each chip is inspected for electrical characteristics by a semiconductor wafer inspection device (also referred to as a prober), and then separated for each chip by a dicing device (also referred to as a dicer).
- a semiconductor wafer inspection device also referred to as a prober
- a dicing device also referred to as a dicer
- the semiconductor wafer inspection apparatus includes a table, a probe, a tester, and the like.
- a semiconductor wafer before inspection is mounted on the mounting surface of the table and is sucked and held. Thereafter, the probe is brought into contact with the electrode pad of each chip, and the signal output to the electrode of the chip is analyzed by the tester.
- the electronic device since the electronic device is used in a wide temperature range, it is necessary to inspect the electronic device at room temperature (room temperature), a high temperature such as 200 ° C. or higher, or a low temperature such as ⁇ 55 ° C., for example. Therefore, some semiconductor wafer inspection apparatuses have a function for performing inspection under such a temperature environment.
- room temperature room temperature
- a high temperature such as 200 ° C. or higher
- a low temperature such as ⁇ 55 ° C.
- heating / cooling means such as a heater mechanism, a chiller mechanism, and a heat pump mechanism are provided under the table mounting surface, and the mounting surface is heated / cooled by the heating / cooling means.
- the semiconductor wafer placed on the placement surface is heated to the temperature or cooled.
- the semiconductor wafer inspection apparatus disclosed in Patent Document 1 has a cold air generating unit mounted above a conductor plate (table), and the semiconductor air placed on the conductor plate from the cold air generating unit, The conductor plate is sprayed. Further, a hot air generating part is attached below the conductor plate, and hot air is blown from the hot air generating part to the conductor plate. In this way, after controlling the surface temperature of the semiconductor wafer with air or nitrogen gas controlled to temperatures of 25 ° C. and 75 ° C., the electrical characteristics of the electronic device are inspected by the probe.
- the semiconductor wafer When the semiconductor wafer is warped as described above, the semiconductor wafer cannot be attracted and held on the mounting surface of the table, and the semiconductor wafer may be damaged.
- the present invention has been made in view of such circumstances, and a semiconductor wafer inspection apparatus capable of suppressing warpage of a semiconductor wafer caused by a temperature difference between a table mounting surface and the semiconductor wafer, and a semiconductor wafer
- the purpose is to provide an inspection method.
- a table having a mounting surface on which a semiconductor wafer is mounted, and the semiconductor mounted on the mounting surface of the table A probe that is in contact with a semiconductor device on a wafer and inspects the electrical characteristics of the semiconductor device, and a heating means that fully heats the mounting surface of the table in order to inspect the electrical characteristics of the semiconductor device using the probe And preheating means for preheating the semiconductor wafer before being placed on the placement surface of the table.
- the probe in order to achieve the above object, is brought into contact with the semiconductor device of the semiconductor wafer placed on the placement surface of the table, and the electrical characteristics of the semiconductor device are measured.
- the semiconductor wafer after preheating the semiconductor wafer in the preheating step, the semiconductor wafer is mounted on the mounting surface of the main heated table.
- the temperature difference between the table mounting surface and the semiconductor wafer is reduced, so that the warpage of the semiconductor wafer that occurs immediately after being mounted on the table mounting surface is suppressed. be able to.
- the semiconductor wafer is preheated by preheating means.
- One aspect of the semiconductor wafer inspection apparatus of the present invention is a storage unit in which the semiconductor wafer before inspection by the probe is stored, and the semiconductor wafer is transported from the storage unit to the preheating means, and the preheating is performed. It is preferable that the semiconductor wafer preliminarily heated by the means is transported to the mounting surface of the table.
- One aspect of the semiconductor wafer inspection method of the present invention includes a first transfer step of transferring the semiconductor wafer from a storage portion in which the semiconductor wafer before the inspection by the probe is stored to a preheating means of the preheating step. And a second transfer step of transferring the semiconductor wafer preheated by the preheating means to the mounting surface of the table.
- the apparatus includes a storage unit storing a semiconductor wafer before inspection and a transfer unit, and the transfer unit transfers the semiconductor wafer from the storage unit to the preheating unit in the first transfer step.
- the semiconductor wafer preheated by the preheating means is transferred to the mounting surface of the table.
- the preheating unit performs the preheating in a state where the semiconductor wafer is held by the transfer unit.
- the preliminary heating step performs the preliminary heating in a state where the semiconductor wafer is held by a holding unit
- the second transfer step includes the semiconductor by the holding unit. It is preferable to transport the semiconductor wafer to the mounting surface of the table while maintaining the state of holding the wafer.
- preheating is performed in a state where the semiconductor wafer is held by the transfer means (holding means), and the semiconductor wafer is placed on the table mounting surface while maintaining the state where the semiconductor wafer is held by the transfer means. Transport to.
- the semiconductor wafer can be preheated while eliminating the temperature gradient between the transfer means and the semiconductor wafer, the warpage of the semiconductor wafer with respect to the transfer means can be prevented.
- the preheating means includes a box having an entrance / exit of the semiconductor wafer and a heater for heating the internal air of the box.
- the preheating step carries the semiconductor wafer into the internal space of the box from the entrance of the box, and the gas in the internal space heated by the heater, It is preferable to preheat the semiconductor wafer.
- a heater is provided in the internal space of the box that is opened only at the entrance and exit of the semiconductor wafer, and the semiconductor wafer carried into the internal space is preheated by the gas in the heated internal space.
- the whole including the front surface and the back surface of the semiconductor wafer can be preheated uniformly.
- the preliminary heating step is performed by holding the semiconductor wafer away from the mounting surface of the table and transmitting it by convection or radiation from the mounting surface. After preheating the semiconductor wafer with heat, it is preferable to place the semiconductor wafer on the mounting surface.
- a semiconductor wafer is held a predetermined amount (for example, several millimeters) away from the table mounting surface, and the semiconductor wafer is held by heat transferred by convection or radiation from the table mounting surface. You may heat to 2nd temperature.
- the preheating method of the semiconductor wafer may be a heating method using heat transmitted from another convection mechanism unit or another radiant body instead of convection or radiation from the table mounting surface.
- the main heating temperature of the mounting surface of the table by the heating means is a first temperature
- the preheating temperature of the semiconductor wafer by the preheating means is set as the first temperature.
- the second temperature is preferably equal to or lower than the first temperature.
- the temperature of the main heating of the placement surface of the table by the heating step is a first temperature
- the temperature of the preheating of the semiconductor wafer by the preheating step is When the second temperature is set, the second temperature is preferably equal to or lower than the first temperature.
- the semiconductor wafer can be transported in a minimum time without being affected by the temperature difference between the table mounting surface and the semiconductor wafer.
- the warpage of the semiconductor wafer due to the temperature difference between the mounting surface of the table and the semiconductor wafer can be suppressed.
- FIG. 1 is an overall perspective view showing a configuration of a prober (semiconductor wafer inspection apparatus) 10 according to an embodiment to which a semiconductor wafer inspection apparatus and a semiconductor wafer inspection method of the present invention are applied.
- a prober semiconductor wafer inspection apparatus 10 according to an embodiment to which a semiconductor wafer inspection apparatus and a semiconductor wafer inspection method of the present invention are applied.
- the prober 10 includes a prober main body 12 and a loader unit 14 adjacent to the prober main body 12.
- the loader unit 14 is shown in a transparent manner to show a schematic structure inside the loader unit 14.
- FIG. 2 is a side view of the inspection unit 16 disposed inside the prober body 12 (see FIG. 1).
- the inspection unit 16 is in contact with a table 20 having a mounting surface 18 on which the semiconductor wafer W is mounted, and a semiconductor device (not shown) of the semiconductor wafer W mounted on the mounting surface 18 of the table 20. And a probe 22 for inspecting the electrical characteristics of the device.
- the inspection unit 16 uses a broken line to heat the mounting surface 18 of the table 20 to a first temperature (for example, 200 ° C. or more and 300 ° C. or less) in order to inspect the electrical characteristics of the semiconductor device by the probe 22.
- a heater (heating means) 24 is provided on the table 20.
- the table 20 is provided with a plurality of through holes 26 penetrating in the vertical direction, and straight rod-like stage pins 28 are respectively inserted into these through holes 26.
- the lower end portion of the stage pin 28 is connected to the horizontal surface of the plate 30 arranged in the horizontal direction below the table 20.
- the right end of the plate 30 is connected to a nut 36 that is screwed onto the screw shaft 34 of the ball screw device 32.
- the screw shaft 34 is arranged in the vertical direction, and the nut 36 is connected to a linear guide 38 that guides the movement of the nut 36 in the vertical direction. Further, a linear motion guide 40 that guides the vertical movement of the plate 30 is provided at the left end of the plate 30.
- the nut 36 can be moved along the screw shaft 34 in the vertical direction by driving the motor 42 of the ball screw device 32 to rotate the screw shaft 34 forward or backward. Therefore, when the nut 36 is moved up, the plurality of stage pins 28 are moved up all at once via the plate 30, and the upper end of the stage pin 28 is moved from the mounting surface 18 of the table 20 as indicated by a two-dot chain line. It protrudes upward.
- the semiconductor wafer W transported from the loader unit 14 in FIG. 1 is placed on the upper end of the projecting stage pin 28.
- the nut 36 is moved downward, and the upper end portions of the plurality of stage pins 28 are simultaneously immersed from the mounting surface 18 of the table 20 as indicated by solid lines.
- the semiconductor wafer W is placed on the placement surface 18 of the table 20.
- the semiconductor wafer W is sucked and held on the mounting surface 18 by a vacuum suction force formed on the mounting surface 18 by a suction hole (not shown), and thereafter, by the probe 22 and a tester (not shown).
- the electrical characteristics of the semiconductor device are inspected. Since this method for inspecting electrical characteristics is known, it is omitted here.
- a loader unit 14 shown in FIG. 1 includes a container (storage unit) 46 placed on a load port 44, a transfer arm (transfer unit) 48, a sub-chuck unit 50, a pre-alignment unit 52, an oven (pre-heating unit) 54, and the like. Consists of
- the semiconductor wafer W before inspection stored in the container 46 (in FIG. 1, the semiconductor wafer W is illustrated at a position above the container 46 for easy understanding) is transported straight in the direction of arrow A.
- the lower surface of the arm 48 is held by vacuum suction.
- the semiconductor wafer W is taken out from the container 46 by the linear movement of the transfer arm 48 in the direction of arrow B, and is transferred to the sub chuck unit 50.
- the semiconductor wafer W is sucked and held by the sub chuck unit 50.
- the sub-chuck unit 50 is connected to a drive unit that rotates the sub-chuck unit 50 about the vertical axis, and the semiconductor wafer W attracted to the sub-chuck unit 50 is rotated by this drive unit.
- a sensor (not shown) of the pre-alignment unit 52 detects the position of the notch or the orientation flat of the semiconductor wafer W by the rotation operation of the semiconductor wafer W by the driving unit. As a result, the semiconductor wafer W is positioned. That is, the semiconductor wafer W is rotated to a target angle and positioned at a predetermined position. With the above operation, pre-alignment before mounting on the mounting surface 18 of the table 20 of the prober body 12 is completed.
- the transfer arm 48 When the pre-alignment is completed, the lower surface of the semiconductor wafer W is sucked and held by the transfer arm 48. Thereafter, the transfer arm 48 is pivoted at an angle of 180 degrees in the direction of arrow C, so that the semiconductor wafer W faces the entrance / exit 56 of the oven 54. Thereafter, the semiconductor wafer W is carried into the internal space of the oven 54 together with the transfer arm 48 from the entrance / exit 56 of the oven 54 by the straight movement of the transfer arm 48 in the direction of arrow D.
- FIG. 3 is a longitudinal sectional view of the oven 54.
- the oven 54 includes a box 58 having an entrance 56 and a plurality of electric heaters (heaters) 62 arranged in the internal space 60 of the box 58.
- the electric heater 62 is disposed on the ceiling and floor of the box 58 and, if necessary, on the side wall, and generates heat when a voltage is applied from the power source, and the temperature of the gas (internal air) in the internal space 60. Is heated to a second temperature not higher than the first temperature (for example, not lower than 200 ° C. and not higher than 300 ° C.). As a result, the entire surface including the lower surface (back surface) and the upper surface (front surface) of the semiconductor wafer W is uniformly heated to the second temperature.
- the box body 58 is made of heat-resistant ceramic, and it is preferable to attach a heat insulating material to the outer wall thereof. Further, the transfer arm 48 is also made of heat-resistant ceramic.
- the semiconductor arm W is carried out of the oven 54 through the entrance / exit 56 of the oven 54 by the straight movement of the transfer arm 48 in the direction of arrow E in FIG. Thereafter, the semiconductor wafer W is carried into the prober main body 12 by the linear movement of the transfer arm 48 in the direction of arrow F, and is transferred to the upper end portion of the stage pin 28 indicated by the two-dot chain line in FIG. Thereafter, the transfer arm 48 is linearly moved in the direction of arrow G in FIG. 1 and returned to the original initial position.
- the transfer from the oven 54 to the stage pin 28 takes about 20 seconds, but the ceramic transfer arm 48 is also heated at the same time, and the transfer arm 48 has a larger heat capacity than the semiconductor wafer W.
- the temperature drop of W can be suppressed.
- the temperature of the semiconductor wafer W is maintained at a temperature close to the first temperature of the mounting surface 18 of the table 20, it is possible to suppress the warpage of the semiconductor wafer that occurs during delivery to the mounting surface 18. it can.
- the semiconductor wafer W when the semiconductor wafer W is preheated by the oven 54, the semiconductor wafer W may be removed from the transfer arm 48 and preheated. However, in this case, when the semiconductor wafer W is again attracted and held by the transfer arm 48 after the preheating of the semiconductor wafer W, a temperature gradient is generated between the transfer arm 48 and the semiconductor wafer W, and the semiconductor wafer W is transferred. The arm 48 may warp.
- preheating is performed with the semiconductor wafer W held by the transfer arm (holding means) 48, and the semiconductor wafer W is held while the state where the semiconductor wafer W is held by the transfer arm 48 is maintained. It is conveyed to the mounting surface of the table 20. Thereby, since the semiconductor wafer W can be preheated while eliminating the temperature gradient between the transfer arm 48 and the semiconductor wafer W, the warp of the semiconductor wafer W with respect to the transfer arm 48 can be prevented.
- FIG. 4 is a flowchart showing a method for inspecting the semiconductor wafer W by the prober 10 of the embodiment.
- the heating process of heating the mounting surface 18 of the table 20 to 1st temperature with the heater 24 is also provided before S18 process.
- the semiconductor wafer W is heated to the second temperature equal to or lower than the first temperature in the preheating step (S16)
- the semiconductor wafer W is set to the first temperature. It is mounted on the mounting surface 18 of the heated table 20.
- the effect of the temperature difference between the mounting surface 18 of the table 20 and the semiconductor wafer W (also referred to as thermal shock) is the second temperature lower than the first temperature.
- the preheating temperature, which is the second temperature may be equal to or higher than the first temperature.
- the preheating temperature in the preheating step (S16) is such that when the semiconductor wafer W is placed on the placement surface 18 of the table 20, a temperature gradient occurs between the placement surface 18 and the semiconductor wafer W.
- the temperature may be equal to or higher than the first temperature as long as the semiconductor wafer W is not warped.
- the temperature difference between the mounting surface 18 of the table 20 and the semiconductor wafer W is reduced, so that the warp of the semiconductor wafer that occurs immediately after being mounted on the mounting surface 18 is prevented. Can be suppressed.
- FIG. 5 is a flowchart showing a semiconductor wafer inspection method using a conventional prober.
- FIG. 6 is a side view of the inspection unit 16 for explaining the state of warping of the semiconductor wafer W by a conventional prober.
- the conventional inspection method shown in FIG. 5 does not include the preheating step of S16 as compared with the inspection method of the embodiment shown in FIG.
- the temperature difference between the semiconductor wafer W and the mounting surface 18 is minimized because the preheating step S16 is provided. Thereby, the curvature of the semiconductor wafer W which generate
- the preheating step includes the oven 54 as a preheating unit.
- the semiconductor wafer W can be preheated to the second temperature without the preheating unit.
- FIG. 7 (A) and 7 (B) are explanatory views showing another form of a preheating process for preheating the semiconductor wafer W.
- FIG. 7 (A) and 7 (B) are explanatory views showing another form of a preheating process for preheating the semiconductor wafer W.
- the semiconductor wafer W is held by a predetermined amount (for example, several millimeters) away from the mounting surface 18 of the table 20 by a stage pin 28 and convection or radiation from the mounting surface 18 is held.
- the semiconductor wafer W is heated to the second temperature by the heat transferred by (see the part (A) in FIG. 7).
- the semiconductor wafer W is mounted on the mounting surface 18 heated to the first temperature by the downward movement of the stage pin 28 (see the part (B) in FIG. 7).
- the preheating method of the semiconductor wafer W may be a heating method using heat transmitted from another convection mechanism unit or another radiant body, instead of convection or radiation from the mounting surface 18 of the table 20. .
- the prober 10 transports the semiconductor wafer W from the container 46 to the oven 54 and also transports the semiconductor wafer W preheated by the oven 54 to the mounting surface 18 of the table 20. 48 is provided.
- the semiconductor wafer W before inspection can be smoothly transferred to the mounting surface 18 of the table 20 through the oven 54.
- the whole including the lower surface and the upper surface of the semiconductor wafer W can be uniformly heated to the second temperature by the oven 54. Thereby, there is a great effect in suppressing warpage of the semiconductor wafer W.
- W ... semiconductor wafer, 10 ... prober, 12 ... prober body, 14 ... loader unit, 16 ... inspection unit, 18 ... mounting surface, 20 ... table, 22 ... probe, 24 ... heater, 26 ... through hole, 28 ... stage Pins, 30 ... Plate, 32 ... Ball screw device, 34 ... Screw shaft, 36 ... Nuts, 38 ... Linear motion guide, 40 ... Linear motion guide, 42 ... Motor, 44 ... Load port, 46 ... Container, 48 ... Transfer arm 50 ... Sub-chuck unit, 52 ... Pre-alignment unit, 54 ... Oven, 56 ... Gateway, 58 ... Box, 60 ... Internal space, 62 ... Electric heater
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Abstract
Description
プローバ10は、プローバ本体12と、プローバ本体12に隣接されたローダ部14とから構成される。なお、図1では、ローダ部14の内部の概略構造を示すため、ローダ部14を透視して示している。
図2は、プローバ本体12(図1参照)の内部に配置された検査部16の側面図である。
図1に示すローダ部14は、ロードポート44に載せられた容器(収納部)46、搬送アーム(搬送手段)48、サブチャックユニット50、プリアライメントユニット52、及びオーブン(予備加熱手段)54等から構成される。
図4は、実施形態のプローバ10による半導体ウェーハWの検査方法を示したフローチャートである。
Claims (11)
- 半導体ウェーハが載置される載置面を有するテーブルと、
前記テーブルの前記載置面に載置された前記半導体ウェーハの半導体デバイスに接触されて前記半導体デバイスの電気的特性を検査するプローブと、
前記プローブによって前記半導体デバイスの電気的特性を検査するために、前記テーブルの前記載置面を本加熱する加熱手段と、
前記テーブルの前記載置面に載置される前の前記半導体ウェーハを予備加熱する予備加熱手段と、
を備えたことを特徴とする半導体ウェーハの検査装置。 - 前記プローブによる検査前の前記半導体ウェーハが収納された収納部と、
前記収納部から前記予備加熱手段に前記半導体ウェーハを搬送するとともに、前記予備加熱手段によって予備加熱された前記半導体ウェーハを前記テーブルの前記載置面に搬送する搬送手段と、
を備える請求項1に記載の半導体ウェーハの検査装置。 - 前記予備加熱手段は、前記半導体ウェーハが前記搬送手段によって保持された状態で、前記予備加熱する請求項2に記載の半導体ウェーハの検査装置。
- 前記予備加熱手段は、
前記半導体ウェーハの出入り口を備えた箱体と、
前記箱体の内部空気を加熱するヒータと、
を備える請求項1、2又は3に記載の半導体ウェーハの検査装置。 - 前記加熱手段による前記テーブルの前記載置面の本加熱の温度を第1の温度とし、前記予備加熱手段による前記半導体ウェーハの予備加熱の温度を第2の温度としたとき、前記第2の温度は、前記第1の温度以下である請求項1から4のいずれか1項に記載の半導体ウェーハの検査装置。
- テーブルの載置面に載置された半導体ウェーハの半導体デバイスにプローブを接触させて前記半導体デバイスの電気的特性を検査する検査工程と、
前記検査工程の前に、前記テーブルの前記載置面を本加熱する加熱工程と、
前記テーブルの前記載置面に載置される前の前記半導体ウェーハを予備加熱する予備加熱工程と、
を備えたことを特徴とする半導体ウェーハの検査方法。 - 前記プローブによる検査前の前記半導体ウェーハが収納された収納部から前記予備加熱工程の予備加熱手段に前記半導体ウェーハを搬送する第1の搬送工程と、
前記予備加熱手段によって予備加熱された前記半導体ウェーハを前記テーブルの前記載置面に搬送する第2の搬送工程と、
を備える請求項6に記載の半導体ウェーハの検査方法。 - 前記予備加熱工程は、前記半導体ウェーハを保持手段によって保持した状態で前記予備加熱を行い、
前記第2の搬送工程は、前記保持手段によって前記半導体ウェーハを保持した状態を維持したまま、前記半導体ウェーハを前記テーブルの前記載置面に搬送する請求項7に記載の半導体ウェーハの検査方法。 - 前記予備加熱工程は、
箱体の出入り口から前記箱体の内部空間に前記半導体ウェーハを搬入し、ヒータによって加熱された前記内部空間の気体によって前記半導体ウェーハを予備加熱する請求項6、7又は8に記載の半導体ウェーハの検査方法。 - 前記予備加熱工程は、前記テーブルの前記載置面から前記半導体ウェーハを離間させて保持し、前記載置面からの対流又は輻射によって伝達される熱によって前記半導体ウェーハを予備加熱した後、前記半導体ウェーハを前記載置面に載置させる請求項6に記載の半導体ウェーハの検査方法。
- 前記加熱工程による前記テーブルの前記載置面の本加熱の温度を第1の温度とし、前記予備加熱工程による前記半導体ウェーハの予備加熱の温度を第2の温度としたとき、前記第2の温度は、前記第1の温度以下である請求項6から10のいずれか1項に記載の半導体ウェーハの検査方法。
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