WO2016090603A1

WO2016090603A1 - Thermoelectric conversion device using non-uniformly doped semiconductor as electric arm

Info

Publication number: WO2016090603A1
Application number: PCT/CN2014/093582
Authority: WO
Inventors: 叶磊
Original assignee: 厦门兰智科技有限公司
Priority date: 2014-12-11
Filing date: 2014-12-11
Publication date: 2016-06-16

Abstract

A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm comprises an electric arm. In a current conversion direction, the electric arm is completely or partially non-uniformly doped on purpose to form non-uniform distribution of semiconductor properties. The section of the electric arm that is non-uniformly doped on purpose is completely or at least partially used as a heat absorption part, and is thermally connected to a heat source and takes in heat to carry out thermoelectric conversion. At least a part of the electric arm is used as a heat dissipation part. Therefore, the thermoelectric conversion efficiency is improved, and the device can work under a condition with no temperature difference or even with a negative temperature difference.

Description

Thermoelectric conversion device using non-uniformly doped semiconductor as electric arm

Technical field

The invention relates to the field of thermal energy conversion into electric energy technology, in particular to a thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm.

Background technique

Temperature difference power generation and heat transfer can be realized by using the Seebeck effect, the Peltier effect or the Thomson effect. The thermoelectric power is converted into electric energy by using the ambient temperature, which is an ideal clean new energy source.

In the prior art, the temperature difference power generation is limited in conversion efficiency, generally below 10%, which severely limits the popularization and promotion of the technology. The main reason for the low conversion efficiency is that the absorption capacity of the thermoelectric power generation device is not sufficient, but the reverse resistance voltage formed by the heat release portion is too high, so that the output voltage of the thermoelectric power generation device is low.

The thermoelectric power generation device must rely on high and low temperature differences, and it is impossible to realize thermoelectric conversion without temperature difference. Conversely, when there is no external energy input, heat transfer can be realized without temperature difference environment, and the use of ambient temperature energy is limited. Convenience.

As shown in FIG. 1 , a schematic structural view of a prior art thermoelectric power generation device having at least a high temperature endothermic node, a low temperature heat release node, and two components of two electric arms, wherein two electric arms are homogeneous semiconductors The properties are shown in Figure 2. The homogeneous temperature difference power generation system can be decomposed into three parts with a thermoelectric potential drop, which are the thermoelectric potential drop of the high temperature endothermic node + ΔEa, the thermoelectric potential drop of the low temperature exothermic node - ΔEb, and the exothermic electricity The thermoelectric potential drop of the arm - ΔEc, the total temperature difference voltage is the vector sum of the three, ie U = ΔEa - (ΔEb + ΔEc). The high and low temperature nodes generate a thermoelectric potential drop by superimposing the Seebeck effect and the Thomson effect. The arms are homogeneous, the semiconductor properties are everywhere, and the thermoelectric potential drop is completely realized by the temperature difference in the length of the arm. Formed by the Thomson effect, the magnitude is small. And the low temperature node and the arm thermoelectric potential drop are the resistance voltages that are opposite to the temperature difference voltage, which is an unfavorable factor that contributes to the heat release loss and weakens the output voltage and electric power.

Moreover, under certain ambient temperatures or application conditions, it may be necessary to be able to perform thermoelectric conversion under conditions where the temperature of the endothermic end is equal to or lower than the temperature of the exothermic end, or heat transfer without external power supply assisted conditions. The thermoelectric power generation device cannot be satisfied either.

In order to improve the conversion efficiency, the current research direction starts with new materials, looking for materials with high Seebeck coefficient and high thermal power Z value, but the effect is not obvious, and the progress is slow and unsatisfactory.

Summary of the invention

It is an object of the present invention to provide a thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm to improve thermoelectric conversion efficiency.

To achieve the above object, the solution of the present invention is:

A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm, comprising an electric arm, in the direction of the switching current, all or part of the electric arm is deliberately non-uniformly doped, forming an uneven distribution of semiconductor properties, intentionally non-uniformly doped All or at least a part of the hybrid arm section is an endothermic portion, which is thermally connected to the heat source, and takes in thermal power for thermoelectric conversion; at least a part of the arm serves as a heat releasing portion.

Further, the intentionally non-uniformly doped arm segments have different doping element concentrations, or The same doping element type, or different doping element ratio.

Further, at least one of the doping concentrations in the deliberately non-uniformly doped arm segment is monotonically increasing or monotonically decreasing along the direction of the switching current.

Further, the ratio of the high and low doping concentrations at both ends of the arm section where the doping concentration monotonously rises or falls is ≥ 2, or ≥ 2 * 10 ³ , or ≥ 2 * 10 ⁶ , or ≥ 2 * 10 ⁹ , or ≥ 2 * 10 ¹² .

Further, the arm is composed of a P-type and an N-type semiconductor, or a single P-type semiconductor, or a single N-type semiconductor.

Further, along the positive direction of the converted current vector, the semiconductor property distribution is from P- to P+, or from N+ to N-, or from N to P monotonically varying, the heat conduction of all or part of the surface with the heat source or the heat source. The medium is in contact with or close to the thermal connection as the endothermic portion; in the positive direction of the converted current vector, all or part of the semiconductor property distribution from P+ to P-, or from N- to N+, or from P to N monotonically changing The surface is in contact with or close to the exothermic environment or the heat dissipating medium to achieve a thermal connection as a heat releasing portion.

Further, the heat source material or the medium that transmits the heat source energy, the substance in the heat dissipation environment or the heat dissipation medium is a poor conductor or insulator of electricity.

Further, the arms are all distributed by monotonically varying semiconductor properties, along the positive direction of the converted current vector, the semiconductor properties are distributed from P- to P+, or from N+ to N-, or from N to P.

Further, the electrical arm is distributed along the positive direction of the current vector, the semiconductor property distribution is from P- to P+, or from N+ to N-, or the total length L1 of the monotonously varying portion from N to P, and the semiconductor property distribution is from P+ to P- Or the ratio of the total length L2 from N- to N+, or a monotonously varying portion from P to N ≥ 1.5.

Further, the arm is set to one, and the arm has a monotonously rising or monotonically decreasing semiconductor property distribution along all or a part of the direction of the switching current. The first end of the arm is connected by a conductor or a semiconductor and a circuit, and the arm is intentionally non-uniform. Doped arm segment and heat source or pass The medium that transfers the heat source energy is close to or in contact, and the heat connection is used as the heat absorption portion; the connection node of the arm and the conductor acts as a heat release portion, which is close to or in contact with the environment or the heat dissipation medium; the arm is a single type of P or N type The semiconductor, the electric arm fully or partially forms a semiconductor property distribution in which the intentionally non-uniformly doped arm segments are monotonously changed; or different types of element doping are formed at different positions, and both P-type and N-type semiconductor types are formed, and the intentional non-deformation is formed. Uniformly doped arm segment monotonically changing semiconductor property distribution.

Further, the arm is set to have two semiconductor properties of P-type and N-type, and each arm has a monotonously rising or monotonically decreasing doping concentration in all or a part of the direction of the switching current, and the arm doping concentration is high. One end P+ or N+ is connected to the other end of the other arm with a high doping concentration N+ or P+, and the other end of the two arms with weak semiconductor properties is connected to form a loop; the intentionally non-uniformly doped arm section is used as the heat absorbing part, and the heat source or The medium transmitting the heat source energy is in contact with or close to the node, and the weaker end of the arm semiconductor is connected to the node, and the end of the arm semiconductor having a strong property is connected to the node as a heat releasing portion, which is in contact with or close to the environment or the heat dissipating medium.

Further, the arm is set to have the same semiconductor property as P or the same N-type, and each arm has a monotonously rising or monotonously decreasing doping concentration along all or a part of the switching current direction, and the doping in each arm is performed. The higher concentration end P+ or N+ is connected to the other end of the other arm with a weaker doping concentration P- or N- to form a loop; the arm deliberately non-uniformly doped the arm section as the endothermic part, and the heat source or heat source energy The medium is in contact with or close to achieve a thermal connection, and at least one of the connecting nodes at both ends of the arm is an exothermic node.

After adopting the above scheme, the present invention transforms the current direction, and all or part of the electric arm is deliberately non-uniformly doped to form an uneven semiconductor property distribution, so that all or at least a part of the intentionally non-uniformly doped arm section is an endothermic part. Inhaling thermal power for thermoelectric conversion; at least a part of the arm acts as a heat releasing portion, and the arm forms a deliberately non-uniformly doped arm segment, which can be decomposed into two basic parts: a node thermoelectric potential drop and an arm segment thermoelectric potential drop, wherein Electricity The armature thermoelectric potential drop + ΔEc is in the same direction as the output voltage, and the node thermoelectric potential drop ΔEa and ΔEb may both be resistant voltages, and take negative values, and may take positive and negative values, respectively. The overall output voltage U = ΔEc - (ΔEa + ΔEb), or U = ΔEc - (ΔEa - ΔEb), or U = ΔEc - (- ΔEa + ΔEb).

The invention can be configured with an exothermic node, and the other node and the intentionally non-uniformly doped arm segment serve as heat absorption portions, and the direction of the thermoelectric potential drop is consistent with the final voltage direction, so the ratio of the resist voltage is reduced, the conversion efficiency and the power are reduced. Can be improved. At the same time, the arm relies on its own semiconductor property distribution to realize the total thermoelectric potential difference ΔEc within a long distance of the connecting node, which is the absolute difference of the thermoelectric potential difference ΔEa or ΔEb formed by the short-distance semiconductor property mutation formed by the connection node depending on the material difference. The value is larger, and the difference between the two is larger than the absolute value of the difference in the conventional homogeneous arm device. Therefore, the voltage value remaining after the cancellation is higher, and the output voltage, power, and conversion efficiency are higher.

DRAWINGS

1 is a schematic structural view of a prior art thermoelectric conversion device;

2 is a schematic view showing the doping concentration of an arm of a prior art thermoelectric conversion device;

3a and 3b are schematic diagrams showing the doping of the arm of the present invention;

Figure 4 is a schematic structural view of a first embodiment of the present invention;

Figure 5 is a schematic structural view of a second embodiment of the present invention;

Figure 6 is a schematic structural view of a third embodiment of the present invention;

Fig. 7 is a schematic structural view of a fourth embodiment of the present invention.

detailed description

The invention will be described in detail below with reference to the drawings and specific embodiments.

The invention discloses a thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm, Including the arm, in the direction of the switching current, all or part of the arm is deliberately non-uniformly doped, forming an uneven distribution of semiconductor properties, so that all or at least a part of the intentionally non-uniformly doped arm section is an endothermic part, and a heat source The thermal connection is performed, and the thermal power is taken in for thermoelectric conversion; at least a part of the electric arm serves as a heat releasing portion.

Deliberately non-uniformly doped arm segments are intentionally controlled along the direction of thermoelectric conversion current, including but not limited to crystal growth, raw material mixing, high temperature diffusion, ion implantation and other doping processes, through the control of process flow and parameters. For example, controlling the concentration, type, ratio of doping substance, pressure of doping process, width and spacing distance of doping window, window moving speed, process temperature, processing time, scanning area selection of ion implantation, etc. All or some parts are non-uniformly doped, so that all or part of the arm segments after doping have different doping element concentrations at different positions, or different doping element types, or different doping elements In short, in some different locations, there are different semiconductor properties, including not only the P-type, N-type and intrinsic types of semiconductor types, but also the P or N type, but the strength of semiconductor properties. s difference.

At least one of the doping concentrations in the deliberately non-uniformly doped arm segment is monotonically increasing or monotonically decreasing along the direction of the switching current. The ratio of the high and low doping concentrations at both ends of the arm section where the doping concentration monotonically rises or falls is ≥ 2, or ≥ 2 * 10 ³ , or ≥ 2 * 10 ⁶ , or ≥ 2 * 10 ⁹ , or ≥ 2 * 10 ¹² .

The ratio of the high and low doping concentration at both ends of the arm section is ≥2, and the two ends of the intentionally non-uniformly doped arm section will form a small difference in thermoelectric potential at the same temperature condition, ensuring strict temperature at both ends of the intentionally non-uniform doping. Under equal conditions, a voltage difference of not zero will occur.

As the ratio of doping concentration increases, the difference in thermoelectric potential between the two ends of the deliberately non-uniformly doped arm segment will gradually increase. Under the condition that the temperature at both ends of the intentionally non-uniformly doped arm segment is strictly equal, the voltage difference will follow. Increased. The semiconductor doping concentration can be as high as ten or more than ten units, so the ratio of the concentration at both ends can be selected in a wide range.

For the ratio of doping concentration <2, although there are differences, the ratio of the doping concentration is The doping conditions are very close and similar to those of conventional thermoelectric conversion devices.

The doping concentration of each position in the entire non-uniformly doped arm section affects the output voltage, current, power, etc. of the entire thermoelectric conversion device during the thermoelectric conversion process. The same length of the arm, the same temperature distribution, the same end-to-end semiconductor properties, as long as the internal doping concentration distribution along the current direction is different, the electrical parameters of the final composition of the thermoelectric conversion device will be different. Controlling and adjusting the internal doping concentration distribution has a significant impact on the adjustment of temperature, voltage, output power, and efficiency.

The arm may be composed of a P-type and an N-type semiconductor, or a single P-type semiconductor, or a single N-type semiconductor.

Along the positive direction of the converted current vector, the semiconductor property is distributed from P- to P+, or from N+ to N-, or from N to P in a monotonously continuously changing portion, all or part of its surface with a heat source or a heat transfer medium that transfers heat energy. Contact or close, to achieve thermal connection as the endothermic part; along the positive direction of the commutating current vector, all or part of the surface of the semiconductor property distribution from P+ to P-, or from N- to N+, or from P to N monotonously changing Contact or close to the exothermic environment or heat dissipating medium to achieve thermal connection as a heat release site.

The heat source material or the medium that transmits the energy of the heat source, the substance in the heat dissipation environment or the heat dissipation medium, is a poor conductor or insulator of electricity. Taking a continuous non-uniformly doped arm section as an example, in the process of endothermic power generation, it can be equivalent to a battery, and the front and rear ends can be regarded as the two poles of the battery. When the heat source material or the heat conductive medium is in contact with it, If the resistivity is small, it is equivalent to connecting an electric circuit in parallel with the two poles of the arm section, which will form electric power dissipation, which is equivalent to a certain degree of short circuit.

In order to avoid this, the heat source material or the heat transfer medium is required to have as high a resistivity as possible, preferably an insulator. For better thermal conductivity, or to reduce the output power of the arm section properly, it can also be configured with weak electrical conductivity, but the overall resistivity must be maintained at a large level.

The conductor or semiconductor node connected to the arm in the thermoelectric conversion device also has the characteristics of heat absorption or heat release, and is also a part of voltage formation, and the heat source or heat medium or heat dissipating material in contact with them also needs to have sufficient insulation performance. .

The entire arm can be configured to monotonically vary the distribution of semiconductor properties along the same direction. The semiconductor properties are distributed from P- to P+, or from N+ to N-, or from N to P, along the positive direction of the converted current vector.

The same arm can also be divided into multiple segments, some of which are uniformly doped and have the same semiconductor property distribution characteristics, and the other segments are along the positive direction of the same conversion current vector, from the current input end to the other end of the output. A distribution of semiconductor properties from P- to P+, or from N+ to N-, or from N to P is achieved.

The arm can also be divided into multiple segments along the positive direction of the converted current vector, wherein the semiconductor properties are distributed from P- to P+, or from N+ to N-, or from N to P monotonically varying portions of the total length L1, and semiconductor property distribution from The ratio of P+ to P-, or from N- to N+, or the total length L2 of the monotonously varying portion from P to N is ≥ 1.5, and an excessively small length ratio causes a significant reduction in conversion efficiency.

Assume that in the direction of the switching current, any two equal-length arm segments are dl1=dl2. Under the condition of constant temperature, the semiconductor properties monotonously change in a certain direction and have two different absolute values of the change slope |dρ1 |/dl1 and |dρ2|/dl2, where |dρ1|/dl1>|dρ2|/dl2, the absolute value of the voltage increment generated by the larger absolute value of the slope is larger, |dU1|>|dU2|. However, the ratio of the slope of the change in the semiconductor property is not equal to the ratio of the voltage increment. Generally, the ratio of the slope of the change in the semiconductor property is larger, that is,

The above analysis results can be qualitatively understood as an arm segment with a faster change in semiconductor properties, and the absolute value of the voltage generated at the corresponding two ends is larger, but the speed at which the voltage increases is lagging behind the speed at which the semiconductor property changes.

Assuming that the two macro-length arm segments L1 and L2, the internal semiconductor property change slopes are constant |dρ1'| and |dρ2'|, respectively, set |dρ1'|>|dρ2'|, when the two arms are When the semiconductor properties of the first and last ends correspond to the same, L1 < L2, and satisfy

Each of the length micro-elements generates a voltage, and the voltage is simply algebraically added in the series direction, so the ratio of the macro voltage generated by the two arm segments L1 and L2 is

Derived from the front

Therefore, there must be U1<U2, that is, the non-uniformly doped arms with the same properties of the first and second semiconductors at the same time. Under the condition that the temperature is uniform and the slope of the internal semiconductor property is uniform, the absolute value of the voltage U2 generated by the longer arm L2 is more high. In order to facilitate the output of the higher voltage of the thermoelectric conversion device, the semiconductor property variation inside the endothermic arm segment is adjusted to be slower, the overall length is longer, and the length of the other semiconductor properties in the opposite direction of the arm is shorter and the change is faster. .

The invention is further illustrated by the following specific examples:

As shown in FIG. 4, a first embodiment of a thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm is disclosed. As shown in FIG. 5, a non-uniformly doped semiconductor is disclosed in the present invention. A second embodiment of a thermoelectric conversion device for an arm; as shown in FIG. 6, a third embodiment of a thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm disclosed in the present invention; the three embodiments are identical in that The arms are all provided in one, except that the first embodiment is composed of an N-type and a P-type semiconductor from one end to the other.

The arm is set to one, and the arm has a monotonously rising or monotonically decreasing semiconductor property distribution along all or a part of the direction of the switching current. The first end of the arm is connected by a conductor or a semiconductor and a circuit, and the arm is intentionally non-uniformly doped. The arm segment is in close contact or contact with the heat source or the medium that transfers the energy of the heat source to realize the thermal connection as the heat absorbing portion; the connection node between the arm and the conductor acts as a heat releasing portion, and is close to or in contact with the environment or the heat dissipating medium.

As shown in FIG. 5 and FIG. 6, the arm is a P or N type single type semiconductor, and all or part of the arm forms a semiconductor property distribution in which the intentionally non-uniformly doped arm segments monotonously change.

As shown in FIG. 4, different types of element doping are formed at different positions, and both P-type and N-type semiconductor types are provided, and a semiconductor property distribution in which a deliberately non-uniformly doped arm segment is monotonously changed is formed.

As shown in FIG. 7 , a fourth embodiment of a thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm is disclosed. In this embodiment, the electric arm is set to have two semiconductor properties: P-type and N-type. Root, each arm has a monotonously rising or monotonically decreasing doping concentration along all or part of the direction of the switching current, and one end of the arm doping concentration is P+ or N+ and the other arm is doped to a higher concentration end N+ or P+ Connection, the other end of the two arms with weak semiconductor properties are connected to form a loop; the intentionally non-uniformly doped arm segment acts as an endothermic portion, in contact with or close to the heat source or the medium that transfers the energy of the heat source, and the semiconductor properties of the arm are weak. One end is connected to the node, and one end of the arm semiconductor having a strong property is connected to the node as a heat releasing portion, which is in contact with or close to the environment or the heat dissipating medium; or, the intentionally non-uniformly doped arm segment serves as an endothermic portion, and the heat source or the heat source energy The medium is in contact with or close to the end, and the weaker end of the arm semiconductor is connected to the node as the endothermic part, and the end of the electric arm semiconductor having the strong attribute is connected to the node as the exothermic part. In contact with or near ambient or a heat medium.

Of course, the electric arm can also be set to have two semiconductor properties of the same P or the same N type, and each arm has a monotonously rising or monotonously decreasing doping concentration along all or part of the direction of the switching current, in each arm. One end of the doping concentration P+ or N+ is connected to the other end of the other arm with a weak doping concentration P- or N- to form a loop; the arm deliberately non-uniformly doped the arm section as an endothermic part, with heat source or transmission The medium of the heat source energy contacts or approaches to achieve thermal connection, and at least one of the connection nodes at both ends of the arm is an exothermic node.

By using a thermoelectric conversion device composed of a non-uniformly doped arm, two or more electrical connections in series, parallel or serial combination can be realized to adjust the output capability and obtain the required The output parameters, the stages may be the same structure, or may be different single or multiple arm structures, and may also be similarly electrically connected to other conventional homogeneous temperature difference power generating devices.

According to the invention, under the condition of no temperature difference with the same ambient temperature, the thermoelectric potential levels at different positions inside the non-uniformly doped electric arm are still different, or a thermoelectric potential drop is formed, thereby forming a voltage. After forming the loop, it completely relies on the drop of the doping concentration in the arm, and can also generate output voltage, current, and external output power, and can continue to work without temperature difference.

At the same time, when the temperature of the exothermic node is higher than the temperature of the endothermic portion, a negative temperature difference is formed. As long as the threshold is not exceeded, the thermoelectric conversion can continue, and the system continues to work. Only when the negative temperature difference is too large, the system will stop working when the threshold is reached or exceeded. In the case of negative temperature difference, the current direction of the corresponding low temperature endothermic node is from N-->P, or from N+-->N-, or from P--->P+, the current direction of the high-temperature exothermic node is opposite. .

Applications of the present invention include, but are not limited to, fuel generators, solar power generation, seawater temperature power generation, temperature power generation, air conditioning equipment, refrigerator freezers, air energy heating equipment, ice machines, waste heat recovery equipment, active heat sinks, desalination, Electric-powered cars, airplanes, ships, portable equipment, etc.

The above description is only a preferred embodiment of the present invention, and is not a limitation on the design of the present invention. Any equivalent changes made according to the design key of the present case fall within the scope of protection of the present case.

Claims

A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm, comprising: an electric arm, in the direction of converting current, all or part of the electric arm is deliberately non-uniformly doped to form an uneven semiconductor attribute distribution, All or at least a portion of the intentionally non-uniformly doped arm segment is an endothermic portion that is thermally coupled to the heat source to draw heat power for thermoelectric conversion; at least a portion of the arm serves as a heat release portion.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, characterized in that the arm segments are intentionally non-uniformly doped, and different dopings are carried out according to different portions of the current direction. The element concentration, or different doping element types, or different doping element ratios are doped, with different semiconductor properties, P- and P+, or N- and N+.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, wherein at least one of the semiconductor properties of the deliberately non-uniformly doped arm segment is in a direction of a switching current Monotonically enhanced or monotonically weakened.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 3, wherein a ratio of high to low doping concentration at both ends of the arm segment where the doping concentration monotonously rises or falls is ≥ 2, or ≥2*10 3 , or ≥2*10 6 , or ≥2*10 9 , or ≥2*10 12 .
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, wherein the electric arm is composed of a P-type and an N-type semiconductor, or a single P-type semiconductor, or a single N-type semiconductor composition.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, wherein the semiconductor property distribution of the arm is in accordance with a positive direction of the converted current vector from P- to P+, or from N+. To N-, or from N to P, the trend of monotonously changing parts, all or part of its surface with heat source or heat transfer medium that transfers heat source energy Contact or close, to achieve thermal connection as an endothermic part; along the positive direction of the commutating current vector, all or part of the semiconductor property distribution from P+ to P-, or from N- to N+, or from P to N monotonously continuously changing parts The surface is in contact with or close to the exothermic environment or the heat dissipating medium to achieve a thermal connection as a heat releasing portion.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 6, wherein: a heat source material directly contacting the semiconductor arm or a medium transmitting heat source energy; and a semiconductor device directly in a heat dissipation environment The substance in contact with the arm or the heat dissipating medium is a poor conductor or insulator of electricity.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, wherein: in a positive direction of the converted current vector, a portion of the electric arm in which all semiconductor properties continuously change, a change in semiconductor attribute distribution The trend is from P- to P+, or from N+ to N-, or from N to P.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, wherein the arm is in a positive direction of the converted current vector, and a certain portion of the semiconductor property changes direction and some other segments The trend of change is reversed, where the semiconductor properties are distributed from P- to P+, or from N+ to N-, or from N to P monotonically continuously varying portions of the total length L1, and semiconductor property distributions from P+ to P-, or from N - The ratio of the total length L2 to N+, or the monotonously continuously varying portion from P to N is ≥ 1.5.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, wherein the electric arm is disposed as one, and the arm has a monotonous rise or a monotonous decrease along all or a part of the direction of the converted current. The semiconductor property distribution, the first end of the arm is connected by a conductor or a semiconductor and a circuit, and the arm intentionally non-uniformly doped the arm section is close to or in contact with the heat source or the medium transmitting the heat source energy, thereby realizing the thermal connection as the heat absorbing portion; The connecting node of the electric arm and the conductor serves as a heat releasing portion, which is close to or in contact with the environment or the heat dissipating medium; the electric arm is all P or all of the N type single type semiconductor, and the electric arm is all Part or part of the deliberate non-uniform doping, forming a monotonously varying semiconductor property distribution; or different P and N type element doping at different positions of the arm, respectively having two types of P-type and N-type semiconductors, and forming intentional non- Uniformly doped arm segment monotonically changing semiconductor property distribution.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, wherein the electric arm is provided with two semiconductor properties of P type and N type, each arm edge All or a part of the direction of the switching current has a monotonously rising or monotonically decreasing doping concentration, and one end of the electrode doping concentration P+ or N+ is connected to the other end of the other arm with a high doping concentration N+ or P+, and the two arm semiconductor properties The weaker end is connected to form a loop; the intentionally non-uniformly doped arm section acts as an endothermic part, in contact with or close to the heat source or the medium that transfers the heat source energy, and the weaker end of the arm semiconductor is connected to the node, and the arm semiconductor The stronger one end connects the node as a heat release part, and is in contact with or close to the environment or the heat dissipation medium.
A thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm according to claim 1, wherein the electric arm is provided as two semiconductors having the same P or N type, each of the electric arms All or a portion of the direction of the switching current has a monotonously rising or monotonically decreasing doping concentration, and one end of the arm having a higher doping concentration, P+ or N+, and the other end of the other arm having a weaker doping concentration, P- or N- Connected into a loop; the arm intentionally non-uniformly doped the arm segment as an endothermic portion, in contact with or close to the heat source or the medium that transfers the energy of the heat source, to achieve thermal connection, at least one of the connecting nodes at both ends of the arm is an exothermic node.