CN105870314A - Flexible silicon-based nanometer thin film thermoelectric device - Google Patents
Flexible silicon-based nanometer thin film thermoelectric device Download PDFInfo
- Publication number
- CN105870314A CN105870314A CN201610263449.6A CN201610263449A CN105870314A CN 105870314 A CN105870314 A CN 105870314A CN 201610263449 A CN201610263449 A CN 201610263449A CN 105870314 A CN105870314 A CN 105870314A
- Authority
- CN
- China
- Prior art keywords
- silicon
- thin film
- based nano
- flexible
- film thermoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- 239000010409 thin film Substances 0.000 title claims abstract description 46
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 67
- 239000011521 glass Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims description 38
- 239000011248 coating agent Substances 0.000 claims description 34
- 239000002120 nanofilm Substances 0.000 claims description 30
- 230000005855 radiation Effects 0.000 claims description 13
- 238000010521 absorption reaction Methods 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 238000005240 physical vapour deposition Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000002096 quantum dot Substances 0.000 abstract description 2
- 239000011247 coating layer Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000002305 electric material Substances 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000005619 thermoelectricity Effects 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000005616 pyroelectricity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003503 terephthalic acid derivatives Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention proposes a flexible silicon-based nanometer thin film thermoelectric device. The flexible silicon-based nanometer thin film thermoelectric device comprises a flexible glass substrate, wherein silicon-based nanometer thin film thermoelectric arms, graphene electrodes and a graphene coating layer are arranged on the flexible glass substrate, the silicon-based nanometer thin film thermoelectric arms are deposited on the flexible glass substrate by a physical vapor deposition technology, and the silicon-based nanometer thin film thermoelectric arms are connected by the graphene electrodes. In the flexible silicon-based nanometer thin film thermoelectric device, the flexible glass substrate is adopted, a high-temperature rapid annealing process can be adopted during the preparation process of a nanometer silicon-based thin film deposited on the surface of the substrate, the generation of quantum dots and superlattices are facilitated, and the thermoelectric performance of the silicon-based nanometer thin film is substantially improved.
Description
Technical field:
The present invention relates to technical field of thermoelectricity, particularly to a kind of flexible silicon based nano film thermo-electric device.
Background technology:
Along with mankind's fast lifting to energy demand, the non-renewable energy resources such as oil, natural gas start day by day exhausted, and make
The problem of environmental pollution emerged in an endless stream is brought during with.Therefore, the development and application of novel energy material and technology receives much attention.
Compared with the renewable energy system such as solar energy, wind energy, the working medium of semi-conductor thermoelectric device is the electronics conducted in solids,
So it is little with or without refrigerant leakage, mechanical motion, friction and noise, life-span length, volume, light weight, be prone to and other
Electronics and the advantage such as photoelectric device is integrated.
Since 2013, being rapidly heated and fast development of wearable intelligent electronic device, for meet its press close to human body, facilitate hidden
Shape, the requirement of the most standby and real-time monitoring, self can continue the miniaturization of energy supply, flexibility in the urgent need to developing a class
Power-supply system.Although the flexible battery such as lithium battery, zinc battery continues, boat ability has promoted, but also needs to periodically charge.Flexible
Human heat can be converted into electric energy, the application demand of the ten wearable smart machines of subcontract by thermo-electric device endlessly.
At present it has been reported that flexible thermal electrical part mostly use high molecular polymer such as polyimides (PI), poly terephthalic acid
Class plastics (PET), polydimethylsiloxane (PDMS) do base material, and the metal such as gold, silver, copper does electrode material.High
Molecular material substrate does not adapt to the technique such as high annealing, Reflow Soldering, gold, silver, copper electrode material during prepared by device
And there is bigger Schottky contacts resistance between thermoelectric arm material, cause the flexible thermal electrical part reported at present exist efficiency low,
Cost is high, be difficult to the shortcoming integrated with silicon-based devices.Additionally, itself there is the performance of the Organic thermoelectric material of flexibility far below nothing
Machine thermoelectric material, even the excellent representative Graphene of Performance comparision and the electrical conductivity of the compound flexible thermal electric material of antimony nano wire,
The power factor of Seebeck coefficient and near room temperature is respectively: 978Sm, 286 μ VK and 80x10-6W(mK2)。
Summary of the invention:
The present invention is to solve that the problems referred to above, this patent propose a kind of flexible silicon based nano film thermo-electric device, choose pyroelectricity
The main body that silicon materials are thermo-electric conversion that energy is excellent, regulates and controls its conduction type by doping, substitutes macromolecular material by flexible glass
Making substrate, Graphene substitutes the metal material such as gold, silver, copper and does electrode material, and this device easily uses conventional semiconductors processing technique
Preparation, it is simple to and silicon-based devices is integrated, low cost, stability and high efficiency, overcomes the defect of prior art.
The present invention proposes a kind of flexible silicon based nano film thermo-electric device, including flexible glass substrate, at described flexible glass base
Being provided with silicon-based nano thin film thermoelectric arm, Graphene electrodes, Graphene coating, described silicon-based nano thin film thermoelectric arm uses at the end
Physical gas phase deposition technology is deposited in described flexible glass substrate, uses Graphene electricity between described silicon-based nano thin film thermoelectric arm
Pole is attached.
Preferably, the annexation of described silicon-based nano thin film thermoelectric arm and described Graphene electrodes one in the following manner:
Described Graphene electrodes forms cascaded structure or described Graphene electrodes and N-type with P-type silicon based nano film thermoelectric arm two ends
Silicon-based nano thin film thermoelectric arm two ends form the P-type silicon base of cascaded structure connection or described Graphene electrodes and alternately arranged setting
Nano thin-film thermoelectric arm and N-type silicon-based nano thin film thermoelectric arm two ends form cascaded structure.
Preferably, described cascaded structure is linear series or annular series connection.
Preferably, described Graphene coating includes hot junction heat absorption Graphene coating and cold end heat radiation Graphene coating, and described hot junction is inhaled
Hot Graphene coating and described cold end heat radiation Graphene coating are oppositely arranged in described flexible glass substrate.
Preferably, after described silicon-based nano thin film thermoelectric arm has been prepared by magnetron sputtering, the annealing of 600～800 DEG C is carried out also
Insulation 3min.
The present invention uses physical gas phase deposition technology to prepare pyroelectricity exsertile silicon-based nano thermal electric film under the conditions of room temperature, silica-based
Nano thin-film thermoelectric arm is deposited on the cold end face of flexible glass, does electrode material with Graphene and enter between silicon-based nano thin film thermoelectric arm
Row connects, and sets up thermograde between hot junction Graphene heat absorbing coating and cold end Graphene thermal dispersant coatings, guides heat and receives along silica-based
The conduction of rice thin film thermoelectric arm brachium direction, utilizes silica-based thermoelectric arm Seebeck effect to produce open-circuit voltage, carries out thermo-electric conversion.
Silicon-based nano thin film uses physical vapour deposition (PVD) (PVD) technology, for example with the equipment such as magnetron sputtering, molecular beam epitaxy,
Flexible glass deposits monolayer, the thin film of multilamellar silica-based doping three races (B, Al, Ga, In etc.) element, uses afterwards and quickly move back
Ignition technique, generates resistivity under room temperature condition and is not higher than 1.5 × 10-5Ω m, 80 DEG C of Seebeck coefficients are not less than the height of 700 μ V/K
Performance silicon-based nano thermal electric film.Power factor between 80～280 DEG C: 5x10-3～3.5x10-2W(mK2), Seebeck coefficient
300～700 μ V/K, resistivity 1.2 × 10-5～2.5 × 10-5Ω·m。
Silicon-based nano thin film thermoelectric arm quantity and arrangement mode, according to device shape and size design and arrangement, use laser ablation skill
Art makes mask, deposits silicon-based nano thin film thermoelectric arm in flexible glass substrate.Graphene heat radiator coating and electrode material
Employing chemical method synthesizes, and uses printing technology to be printed in flexible glass substrate.
The invention has the beneficial effects as follows:
1) present invention uses flexible glass substrate, and the nano silicon-based thin film being deposited on substrate surface can use height in preparation process
The generation of temperature rta technique, beneficially quantum dot and superlattices, is greatly improved silicon-based nano thin film thermoelectric performance, often compares
The power factor of the flexible thermal electric material of rule improves 1000 times；
2) using grapheme material as connecting electrode between thermoelectric arm, Graphene and thermal expansion coefficient of glass are close, reduce heat
Electrical part internal stress；
3) grapheme material electrical conductivity, thermal conductivity are splendid, contact electricity can be greatly reduced between thermoelectric arm and electrode as connecting electrode
Resistance.
Accompanying drawing explanation
Fig. 1 face inner mold In-plane, face external form Cross-plane structure of thin film device schematic diagram；
Fig. 2 is silicon-based nano thin film thermoelectric arm linear series structure thermo-electric device perspective view of the present invention；
Fig. 3 is silicon-based nano thin film thermoelectric armlet shape cascaded structure thermo-electric device perspective view of the present invention；
Fig. 4 is flexible silicon based nano film thermo-electric device Seebeck coefficient datagram under gained different annealing temperature of the present invention；
Fig. 5 is flexible silicon based nano film thermo-electric device resistivity data figure under gained different annealing temperature of the present invention；
Fig. 6 is flexible silicon based nano film thermo-electric device power factor datagram under gained different annealing temperature of the present invention；
Reference: 1, flexible glass, 2, P-type silicon based nano film thermoelectric arm, 3, cold end heat radiation Graphene coating, 4,
Graphene electrodes, 5, hot-side heat dissipation Graphene coating, 6, cold end, 7, thermal electric film, 8, hot junction.
Detailed description of the invention
For making the purpose of the present invention, technical scheme and advantage clearer, clear and definite, referring to the drawings and enumerate embodiment to this
Invention further describes.
In place of needing explanation: provided in embodiments of the invention, schematic structure only reacts the basic conception of the present invention, by graphic
Only show the assembly that the present invention is correlated with, during actual enforcement, the shape of each assembly, size, quantity can adjust the most at random,
And its topology layout is likely more complexity.
Except special instruction, equipment and raw material that the present invention uses are the art routine commercial products, and wherein flexible glass is purchased from
Japanese electric apparatus Xiao Zi Co., Ltd. G-Leaf, model is OA-10G.
Cross-plane structure thermo-electric device in accompanying drawing 1, refers to replace block thermoelectric material, direction of heat flow and substrate with thin film
Surface and thin film thermoelectric arm surface are vertical；In-plane thermo-electric device, refers to replace block thermoelectric material, direction of heat flow with thin film
Parallel with substrate surface and thin film thermoelectric arm radial direction.
Embodiment 1
Seeing Fig. 1～Fig. 6, a kind of flexible silicon based nano film thermo-electric device, including flexible glass substrate 1, in flexible glass 1
P-type silicon based nano film thermoelectric arm 2, Graphene electrodes 4, hot junction heat absorption Graphene coating 5 and the heat radiation of cold end it is provided with in substrate
Graphene coating 3, P-type silicon based nano film thermoelectric arm 2 array is attached by Graphene electrodes 4；Hot junction heat absorption Graphene is coated with
Layer 5 is arranged at being heated on end face of flexible glass substrate 1, and cold end heat radiation Graphene coating 3 is arranged at flexible glass substrate 1
On heat radiation end face.
P-type silicon based nano film thermoelectric arm 2 is prepared by magnetron sputtering.In coating chamber, base vacuum is 4.2 × 10-4Pa,
Through starter and 10-15min wash target after, open Si target and Ge target co-sputtering simultaneously, and the sputtering power controlling Si be
The sputtering power of 100W, Ge is 60W, sputters 6min.Then shut Si target and Ge target 15s, open B target, control B
Sputtering power be 85W, sputter 30s.Above process is a cycle (B/Si60Ge40), then with B/Si60Ge40Shape
Formula 5 cycles of sputtering.Having sputtered rear short annealing, annealing temperature is respectively set to 600 DEG C, 650 DEG C, 700 DEG C, 750 DEG C
With 800 DEG C, and be incubated 3min.
Thin film after having prepared utilize ZEM-3 type thermoelectricity capability test system that ULVAC produces to measure resistivity of material,
Seebeck coefficient and power factor.
As it is shown in figure 1, arrow represents direction of heat flow in figure, along galvanic couple arm 7, hot-fluid flows to cold end 6 from hot junction 8, this
The face external form dough-making powder inner mold device architecture principle that flexible silicon based nano film thermo-electric device heat-conduction principle such as Fig. 1 of bright proposition improves
Shown in figure: graphene thermal conductance is far longer than flexible glass, hot junction heat absorption Graphene coating absorbs heat, and cold end Graphene dispels the heat
Coating distributes heat, sets up thermograde between the Graphene coating of cold and hot two ends, and induction heat conducts along thermoelectric arm brachium direction,
Produce Seebeck effect, form open-circuit voltage.
In linear series structure thermoelectric arm device perspective view shown in Fig. 2, hot junction Graphene heat absorbing coating 5 uses print
Brush technology is printed on face, flexible glass 1 hot junction, and it is cold that cold end Graphene thermal dispersant coatings 3 uses printing technology to be printed on flexible glass 1
End face.By P-type silicon based nano film thermoelectric arm 2 between cold end Graphene thermal dispersant coatings 3 and hot junction Graphene heat absorbing coating 5
Physical gas phase deposition technology (magnetron sputtering, molecular beam epitaxy etc.) is used to be respectively deposited on the cold end face of flexible glass 1.Adopt
By printing technology, Graphene electrodes 4 is printed between P-type silicon based nano film thermoelectric arm 2 array formation linear series structure,
Finally producing as shown in Fig. 4～Fig. 6, single thermoelectric arm Seebeck coefficient under the conditions of 80 DEG C is not less than 700 μ V/K, power
The factor is not less than 3.5 × 10-2W/mK2, resistivity is not higher than 1.5 × 10-5Ω m is based on flexible glass substrate silicon-based nano thin film thermoelectric
Device.
Representative Graphene that in prior art, Performance comparision is excellent and the electrical conductivity of the compound flexible thermal electric material of antimony nano wire, match
The power factor of seebeck coefficient and near room temperature is respectively: 978Sm, 286 μ VK and 80x10-6W(mK2), well below
3.5x10 on flexible glass substrate in the present invention-2W(mK2) power factor, compare routine flexible thermal electric material power because of
The power factor raising of the flexible silicon based nano film thermo-electric device that the sub-present invention proposes reaches 1000 times.
Embodiment 2
Seeing Fig. 1～Fig. 6, a kind of flexible silicon based nano film thermo-electric device, including flexible glass substrate 1, in flexible glass 1
P-type silicon based nano film thermoelectric arm 2, Graphene electrodes 4, hot junction heat absorption Graphene coating 5 and the heat radiation of cold end it is provided with in substrate
Graphene coating 3, P-type silicon based nano film thermoelectric arm 2 array is attached by Graphene electrodes 4；Hot junction heat absorption Graphene is coated with
Layer 5 is arranged at being heated on end face of flexible glass substrate 1, and cold end heat radiation Graphene coating 3 is arranged at flexible glass substrate 1
On heat radiation end face.
P-type silicon based nano film thermoelectric arm 2 is prepared by magnetron sputtering.In coating chamber, base vacuum is 4.2 × 10-4Pa,
Through starter and 10-15min wash target after, open Si target and Ge target co-sputtering simultaneously, and the sputtering power controlling Si be
The sputtering power of 100W, Ge is 60W, sputters 6min.Then shut Si target and Ge target 15s, open B target, control B
Sputtering power be 85W, sputter 30s.Above process is a cycle (B/Si60Ge40), then with B/Si60Ge40Shape
Formula 5 cycles of sputtering.Having sputtered rear short annealing, annealing temperature is respectively set to 600 DEG C, 650 DEG C, 700 DEG C, 750 DEG C
With 800 DEG C, and be incubated 3min.
Thin film after having prepared utilize ZEM-3 type thermoelectricity capability test system that ULVAC produces to measure resistivity of material,
Seebeck coefficient and power factor.
As it is shown on figure 3, in the present embodiment, P-type silicon based nano film thermoelectric arm 2, Graphene electrodes 4, hot junction heat absorption Graphene
Coating 5 and cold end heat radiation Graphene coating 3 are distributed in flexible glass 1 ringwise, and heat absorption Graphene coating 5 in annular hot junction is adopted
Being printed on face, flexible glass 1 hot junction by printing technology, circular cold end Graphene coating 3 printing technology of dispelling the heat is printed on flexible glass
1 cold end face.
By sector P-type silicon based nano film thermoelectric arm between cold end heat radiation Graphene coating 3 and hot junction heat absorption Graphene coating 5
2 use physical gas phase deposition technology (magnetron sputtering, molecular beam epitaxy etc.) to be respectively deposited on the cold end face of flexible glass 1.
Use printing technology Graphene electrodes 4 to be printed between fan-shaped N-type silicon-based nano thin film thermoelectric arm 2 array and form annular series connection
Structure, finally produces as shown in Fig. 4～Fig. 6, and single thermoelectric arm Seebeck coefficient under the conditions of 80 DEG C is not less than 700 μ V/K,
Power factor is not less than 3.5 × 10-2W/mK2, resistivity is not higher than 1.5 × 10-5Ω m is based on flexible glass substrate silicon-based nano thin film
Thermo-electric device.
Representative Graphene that in prior art, Performance comparision is excellent and the electrical conductivity of the compound flexible thermal electric material of antimony nano wire, match
The power factor of seebeck coefficient and near room temperature is respectively: 978Sm, 286 μ VK and 80x10-6W(mK2), well below
3.5x10 on flexible glass substrate in the present invention-2W(mK2) power factor, compare routine flexible thermal electric material power because of
The power factor raising of the flexible silicon based nano film thermo-electric device that the sub-present invention proposes reaches 1000 times.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and former
Within then, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (5)
1. a flexible silicon based nano film thermo-electric device, it is characterised in that: include flexible glass substrate, at described flexible glass base
Silicon-based nano thin film thermoelectric arm, Graphene electrodes, Graphene coating, described silicon-based nano thin film thermoelectric arm it is provided with at the end
Use physical gas phase deposition technology to be deposited in described flexible glass substrate, use between described silicon-based nano thin film thermoelectric arm
Graphene electrodes is attached.
Flexible silicon based nano film thermo-electric device the most according to claim 1, it is characterised in that described silicon-based nano thin film thermoelectric
The annexation of arm and described Graphene electrodes one in the following manner: described Graphene electrodes and P-type silicon Ji Na
Rice thin film thermoelectric arm two ends form cascaded structure or described Graphene electrodes and N-type silicon-based nano thin film thermoelectric arm two ends
Form cascaded structure connection or described Graphene electrodes and the P-type silicon based nano film thermoelectric arm of alternately arranged setting and N
Type silicon-based nano thin film thermoelectric arm two ends form cascaded structure.
Flexible silicon based nano film thermo-electric device the most according to claim 2, it is characterised in that: described cascaded structure is linear string
Connection or annular series connection.
Flexible silicon based nano film thermo-electric device the most according to claim 1, it is characterised in that: described Graphene coating includes heat
End heat absorption Graphene coating and cold end heat radiation Graphene coating, described hot junction heat absorption Graphene coating and described cold end heat radiation stone
Ink ene coatings is oppositely arranged in described flexible glass substrate.
Flexible silicon based nano film thermo-electric device the most according to claim 1, it is characterised in that: described silicon-based nano thin film thermoelectric
Arm is carried out the annealing of 600～800 DEG C and is incubated 3min after having been prepared by magnetron sputtering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610263449.6A CN105870314B (en) | 2016-04-26 | 2016-04-26 | A kind of flexible silicon based nano film thermo-electric device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610263449.6A CN105870314B (en) | 2016-04-26 | 2016-04-26 | A kind of flexible silicon based nano film thermo-electric device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105870314A true CN105870314A (en) | 2016-08-17 |
| CN105870314B CN105870314B (en) | 2018-08-07 |
Family
ID=56629114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610263449.6A Active CN105870314B (en) | 2016-04-26 | 2016-04-26 | A kind of flexible silicon based nano film thermo-electric device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105870314B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017824A (en) * | 2017-03-23 | 2017-08-04 | 上海交通大学 | A kind of electric combined generating device of photoelectric heat |
| CN107290638A (en) * | 2017-06-14 | 2017-10-24 | 复旦大学 | A kind of Multifunction thermoelectric device test system |
| CN108269910A (en) * | 2018-01-19 | 2018-07-10 | 深圳大学 | A kind of method and thermo-electric device using glass template construct thermo-electric device |
| CN108831947A (en) * | 2018-06-14 | 2018-11-16 | 东华大学 | A kind of flexible photovoltaic thermoelectric integral compound power-generating device |
| CN109920770A (en) * | 2019-03-13 | 2019-06-21 | 苏州鸿凌达电子科技有限公司 | A kind of superminiature intelligence graphene thermoelectricity refrigeration heat pipe reason mould group |
| CN110944414A (en) * | 2019-10-21 | 2020-03-31 | 珠海烯蟀科技有限公司 | Microcrystalline glass or mica sheet heating device and electrode connection method thereof |
| CN111446358A (en) * | 2020-05-22 | 2020-07-24 | 北京航空航天大学杭州创新研究院 | High-precision rapid thin-film thermoelectric device based on pulse laser ablation and preparation method thereof |
| CN113341568A (en) * | 2021-06-04 | 2021-09-03 | 深圳市前海合航科技有限公司 | Intelligent wearable and air purification combined device |
| CN113659064A (en) * | 2020-05-12 | 2021-11-16 | 华为技术有限公司 | Thermoelectric device and thermoelectric apparatus |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200947775A (en) * | 2008-05-09 | 2009-11-16 | Ind Tech Res Inst | Thermoelectric module device with thin film elements and fabrication thereof |
| WO2013048419A1 (en) * | 2011-09-29 | 2013-04-04 | Universal Display Corporation | LAMP WITH MULTIPLE FLEXIBLE OLEDs |
| CN103682075A (en) * | 2012-08-28 | 2014-03-26 | 鉅永真空科技股份有限公司 | Light-permeable thermoelectric cooling element |
| CN104335374A (en) * | 2012-05-30 | 2015-02-04 | 株式会社电装 | Thermoelectric converter manufacturing method, manufacturing method of electronic device provided with thermoelectric converter, and thermoelectric converter |
| CN104465977A (en) * | 2011-07-20 | 2015-03-25 | 中弥浩明 | Thermoelectric conversion element and thermoelectric conversion power generation device |
| CN104756269A (en) * | 2013-10-18 | 2015-07-01 | 韩国科学技术院 | Thermoelectric device using substrate and method for manufacturing the same |
| CN104934526A (en) * | 2015-06-11 | 2015-09-23 | 上海电力学院 | Heteroid flexible thermoelectric conversion device capable of bending and folding |
| CN105027307A (en) * | 2013-03-05 | 2015-11-04 | 株式会社电装 | Thermoelectric converter and method for manufacturing same |
-
2016
- 2016-04-26 CN CN201610263449.6A patent/CN105870314B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200947775A (en) * | 2008-05-09 | 2009-11-16 | Ind Tech Res Inst | Thermoelectric module device with thin film elements and fabrication thereof |
| CN104465977A (en) * | 2011-07-20 | 2015-03-25 | 中弥浩明 | Thermoelectric conversion element and thermoelectric conversion power generation device |
| WO2013048419A1 (en) * | 2011-09-29 | 2013-04-04 | Universal Display Corporation | LAMP WITH MULTIPLE FLEXIBLE OLEDs |
| CN104335374A (en) * | 2012-05-30 | 2015-02-04 | 株式会社电装 | Thermoelectric converter manufacturing method, manufacturing method of electronic device provided with thermoelectric converter, and thermoelectric converter |
| CN103682075A (en) * | 2012-08-28 | 2014-03-26 | 鉅永真空科技股份有限公司 | Light-permeable thermoelectric cooling element |
| CN105027307A (en) * | 2013-03-05 | 2015-11-04 | 株式会社电装 | Thermoelectric converter and method for manufacturing same |
| CN104756269A (en) * | 2013-10-18 | 2015-07-01 | 韩国科学技术院 | Thermoelectric device using substrate and method for manufacturing the same |
| CN104934526A (en) * | 2015-06-11 | 2015-09-23 | 上海电力学院 | Heteroid flexible thermoelectric conversion device capable of bending and folding |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107017824A (en) * | 2017-03-23 | 2017-08-04 | 上海交通大学 | A kind of electric combined generating device of photoelectric heat |
| CN107290638A (en) * | 2017-06-14 | 2017-10-24 | 复旦大学 | A kind of Multifunction thermoelectric device test system |
| CN108269910A (en) * | 2018-01-19 | 2018-07-10 | 深圳大学 | A kind of method and thermo-electric device using glass template construct thermo-electric device |
| CN108831947A (en) * | 2018-06-14 | 2018-11-16 | 东华大学 | A kind of flexible photovoltaic thermoelectric integral compound power-generating device |
| CN109920770A (en) * | 2019-03-13 | 2019-06-21 | 苏州鸿凌达电子科技有限公司 | A kind of superminiature intelligence graphene thermoelectricity refrigeration heat pipe reason mould group |
| CN110944414A (en) * | 2019-10-21 | 2020-03-31 | 珠海烯蟀科技有限公司 | Microcrystalline glass or mica sheet heating device and electrode connection method thereof |
| CN113659064A (en) * | 2020-05-12 | 2021-11-16 | 华为技术有限公司 | Thermoelectric device and thermoelectric apparatus |
| CN111446358A (en) * | 2020-05-22 | 2020-07-24 | 北京航空航天大学杭州创新研究院 | High-precision rapid thin-film thermoelectric device based on pulse laser ablation and preparation method thereof |
| CN111446358B (en) * | 2020-05-22 | 2022-08-05 | 北京航空航天大学杭州创新研究院 | High-precision rapid thin-film thermoelectric device based on pulse laser ablation and preparation method thereof |
| CN113341568A (en) * | 2021-06-04 | 2021-09-03 | 深圳市前海合航科技有限公司 | Intelligent wearable and air purification combined device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105870314B (en) | 2018-08-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105870314A (en) | Flexible silicon-based nanometer thin film thermoelectric device | |
| Yang et al. | Recent developments in flexible thermoelectric devices | |
| Du et al. | Flexible thermoelectric materials and devices | |
| Siddique et al. | A review of the state of the science on wearable thermoelectric power generators (TEGs) and their existing challenges | |
| Iezzi et al. | Printed, metallic thermoelectric generators integrated with pipe insulation for powering wireless sensors | |
| Francioso et al. | Modelling, fabrication and experimental testing of an heat sink free wearable thermoelectric generator | |
| You et al. | Flexible Bi2Te3-based thermoelectric generator with an ultra-high power density | |
| CN104183691B (en) | Planar flexible thermoelectric power generation structure | |
| CN104701449A (en) | Flexible pyroelectric thin film device | |
| US10553773B2 (en) | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs | |
| Liu et al. | A flexible thermoelectric film based on Bi2Te3 for wearable applications | |
| Kuang et al. | Optimized thermoelectric properties and geometry parameters of annular thin-film thermoelectric generators using n-type Bi2Te2. 7Se0. 3 and p-type Bi0. 5Sb1. 5Te3 thin films for energy harvesting | |
| CN108011029A (en) | Cu2Se base thermoelectricity materials and preparation method thereof | |
| Kim et al. | A wearable organic photovoltaic-thermoelectric (OPV-TE) hybrid generator to minimize the open-circuit voltage losses of OPV module | |
| Park et al. | A Flexible Micro‐Thermoelectric Generator Sticker with Trapezoidal‐Shaped Legs for Large Temperature Gradient and High‐Power Density | |
| US10566515B2 (en) | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device | |
| CN206271760U (en) | A kind of flexible wearable temperature difference energy collecting device based on MEMS technology | |
| Liu et al. | Evolution of thermoelectric generators: From application to hybridization | |
| Kim et al. | Thermoelectric thin film devices for energy harvesting with the heat dissipated from high-power light-emitting diodes | |
| Gobpant et al. | High-performance flexible thermoelectric generator based on silicone rubber and cover with graphite sheet | |
| US20200203592A1 (en) | Electric power generation from a thin-film based thermoelectric module placed between each hot plate and cold plate of a number of hot plates and cold plates | |
| CN101969096B (en) | Nanostructured thermoelectric material and device and production method thereof | |
| Baskaran et al. | Recent trends and future perspectives of thermoelectric materials and their applications | |
| Tappura et al. | Large-area implementation and critical evaluation of the material and fabrication aspects of a thin-film thermoelectric generator based on aluminum-doped zinc oxide | |
| CN204614820U (en) | Fexible film temperature difference electricity generation device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20160817 Assignee: Guangxi Liaofan Instrument Equipment Co.,Ltd. Assignor: GUILIN University OF ELECTRONIC TECHNOLOGY Contract record no.: X2022450000539 Denomination of invention: A Flexible Silicon Based Nanofilm Thermoelectric Device Granted publication date: 20180807 License type: Common License Record date: 20221229 |