CN104183691B - Planar flexible thermoelectric power generation structure - Google Patents
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- CN104183691B CN104183691B CN201410342835.5A CN201410342835A CN104183691B CN 104183691 B CN104183691 B CN 104183691B CN 201410342835 A CN201410342835 A CN 201410342835A CN 104183691 B CN104183691 B CN 104183691B
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- 238000010248 power generation Methods 0.000 title abstract 7
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Abstract
The invention discloses a planar flexible thermoelectric power generation structure which includes a thermal conduction layer, an insulating layer, a power generation layer and a hot-end protective layer, which are sequentially arrayed and laid from bottom to top. All of the thermal conduction layer, the insulating layer, the power generation layer and the hot-end protective layer adopt flexible materials. A first flexible material and a second flexible material are closely arrayed alternatively so that the thermal conduction layer is formed. The hot-end protective layer is a flexible insulating strip. Both of the heat conduction factors of the first flexible material and the flexible insulating strip are lower than the heat conduction factor of the second flexible material. The structure increases protection of a hot end and heat radiation of a cold end, improves the temperature gradient of a thermoelectric power generator and further improves an output power and an output voltage. The thermal conduction layer provides a temperature gradient needed by the thermoelectric power generator and has a support function; the flexible materials are adopted so that compared with a rigid thermoelectric power generation device, the power generation structure is flexible, light and convenient and capable of better fitting to the plane; and the power generation structure is simple in structure and manufacturing process and capable of realizing mass production, and has an excellent application prospect.
Description
Technical field
The present invention relates to a kind of thermo-electric generation structure, more particularly, to a kind of plane flexibility thermo-electric generation structure.
Background technology
Energy crisis is increasingly serious, in the urgent need to actively pushing forward and advocating using clean regenerative resource.Heat energy conduct
Widely distributed a kind of energy in nature, when be engraved in generation.But, the current mankind are also much not enough to the utilization of heat energy, profit
Extremely low with rate.The heat energy not used in these natures is fully utilized, transforms into and can store, directly utilize
Electric energy, there is very great researching value.
It is found that Seebeck effect from 1821, with the continuous research to thermoelectric material, pyroelectric technology has obtained more next
More concerns.Thermoelectric generator utilizes the Seebeck effect of thermoelectric semiconductor, by two kinds of different semi-conducting materials (p-type and n
Type) it is together in series, two ends connect thermal source and low-temperature receiver respectively, if there is the temperature difference between cold end and hot junction, will be in cascaded structure
Two ends form voltage, and the heat energy in nature can be converted into electric energy by the thermoelectric generator so constituting.Due to temperature
Difference power generating device have the advantages that no moving parts, pollution-free, structure is simple, be easy to miniaturization so that thermoelectric generation tool
Have wide practical use.
The arranged distribution of thermoelectric unit pair is roughly divided into two kinds at present: a kind of is arranged vertically, and thermoelectric unit is in the form of a column row
Row, are characterized as that cold end is vertical with thermoelectric unit array surface with the line in hot junction；Another kind of is planar alignment, is characterized as cold end and heat
The line at end is parallel with thermoelectric unit array surface.
Distributed thermoelectric generator arranged vertically is capable of higher arrangement density, but due to thermoelectric unit relatively
Thermal resistance is less, and the two ends temperature difference is less, and manufacturing process is complicated, high cost.The thermoelectric unit logarithm of common planar arrangement formula is few, cold
Do not isolate between end and hot junction, the temperature difference is less.
Thermoelectric unit in thermoelectric micro-generators is divided into block and two kinds of forms of film, and the thermoelectricity of block thermoelectric material is excellent
Value has certain limitation, and based on the characteristic of itself, its thermoelectric figure of merit is difficult to improve further, and manufacturing cost height is it is difficult to reach
The purpose of large-scale use.
Existing a lot of thermoelectric micro-generators are mostly rigid, do not have flexible characteristic.The thermoelectric generator of rigidity
Application scenario restricted, be not suitable for curved surface.For example: when thermal source is for human body surface or some cambered surfaces, the temperature difference of rigidity is sent out
Electrical equipment is then inapplicable.
Content of the invention
It is an object of the invention to provide a kind of plane flexibility thermo-electric generation structure, for thermoelectric arm in solution technology
It is not thermally isolated between cold end and hot junction, the cold end of thermoelectric arm is not strengthened radiating, and the cold warm end temperature difference of thermoelectric arm is relatively small, temperature
The problems such as difference electrification structure does not have flexibility.This inventive structure is reliable and stable, processing technology is simple, be suitable for curved surface, flexibly light.
The technical solution used in the present invention is:
Including the heat conduction layer of laying of arranging successively from below to up, insulating barrier, electric layer and hot junction protective layer；Described heat passes
Conducting shell, insulating barrier, electric layer and hot junction protective layer all using flexible material, the first flexible material and the tight phase of the second flexible material
Between arrangement form heat conduction layer, hot junction protective layer be flexible insulation bar, the thermal conductivity factor of the first flexible material and flexible insulation bar
It is below the thermal conductivity factor of the second flexible material.
Described electric layer includes the thin film thermoelectric arm group of multiple rows of spaced and parallel arrangement, the arrangement of every cluster film thermoelectric arm group
It is oriented parallel to the second flexible material, every cluster film thermoelectric arm group includes spaced p-type thin film thermoelectric arm in a row and N-shaped
Thin film thermoelectric arm, p-type thin film thermoelectric arm is identical with the quantity of n-type thin film thermoelectric arm, and adjacent p-type thin film thermoelectric arm and N-shaped are thin
All it is connected in series by copper conductor and hot junction between the cold end of film thermoelectric arm, each group thin film thermoelectric arm group is each by being connected to
Copper conductor from the thin film thermoelectric arm cold end at two ends is connected in parallel；
Described flexible insulation bar is laid on above the hot junction of thin film thermoelectric arm in every cluster film thermoelectric arm group, protects as hot junction
Sheath, every cluster film thermoelectric arm group is located at the top of each self-corresponding first flexible material, and flexible insulation bar is located at and each corresponds to
The second flexible material surface.
Fin for radiating is equipped with the described copper conductor being connected to thin film thermoelectric arm cold end.
The hot junction end face of the p-type thin film thermoelectric arm in described every cluster film thermoelectric arm group and n-type thin film thermoelectric arm is located at
Middle directly over corresponding second flexible material.
The length-width ratio of described p-type thin film thermoelectric arm or n-type thin film thermoelectric arm is 10:1, adjacent p-type thin film thermoelectricity
Spacing between arm and n-type thin film thermoelectric arm is 100 ~ 500 μm.
The coefficient of heat conduction of the first described flexible material is 0.01～0.15w/m k, the heat transfer of the second flexible material
Coefficient is 20 ~ 100w/m k.
It is solid construction inside the first described flexible material.
The invention has the advantages that:
Compared to vertical stratification, the plane flexibility thermo-electric generation structure of the present invention has preferable temperature distributing characteristic, leads
Hot coefficient height is close to thermal source with the low bi-material one end of thermal conductivity factor and the other end is exposed in low temperature environment, so can produce
The larger thermograde of life.
The present invention protects the hot-side temperature of thin film thermoelectric arm, reduces the cold and hot end convection current of thin film thermoelectric arm, thin film thermoelectric
The cold end fin of arm can accelerate cold end radiating, reaches the bigger temperature difference, thus increasing output voltage.
Present invention employs thin film thermoelectric arm, its thermoelectric figure of merit is big, can make broad area device, manufacturing cost is relatively
Low；Using planar alignment distributed frame, thermal resistance is larger, is simple to manufacture, low cost.
Present configuration manufacturing process is simple, can process multiple thermoelectric materials, is suitable for producing in enormous quantities.
The present invention has flexibility, nontoxic, can bend, and it is more flexible to compare rigid structure, light, is suitable for such as human body wrist
On curved surface, range of application is wider than rigid structure.
Brief description
Fig. 1 is the stereogram of the present invention.
Fig. 2 is the fractionation stereogram of the present invention.
Fig. 3 is the schematic top plan view of the present invention.
Fig. 4 is the schematic elevation view figure of Fig. 3 structure.
Fig. 5 is the heat conduction layer schematic diagram of the plane flexibility thermo-electric generation structural base of the present invention.
Fig. 6 is the schematic top plan view after present configuration removes hot junction protective layer.
Fig. 7 is the structural representation of the galley of processing p-type thin film thermoelectric arm.
Fig. 8 is the partial enlarged drawing in a region in Fig. 1.
In figure: 001, heat conduction layer, 002, insulating barrier, 003, electric layer, 004, hot junction protective layer, the 1, first flexible material
Material, the 2, second flexible material, 4, copper conductor, 5, p-type thin film thermoelectric arm, 6, n-type thin film thermoelectric arm, 7, flexible insulation bar, 8, plus
The galley of work p-type thin film thermoelectric arm, 9, the cavity in galley.
Specific embodiment
The present invention is further illustrated for son with reference to the accompanying drawings and examples.
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4, Fig. 5, the present invention includes the heat conduction layer of laying of arranging successively from below to up
001st, insulating barrier 002, electric layer 003 and hot junction protective layer 004, is covered with insulating barrier 002, insulating barrier 002 above heat conduction layer 001
On be covered with electric layer 003, electric layer 003 is covered with hot junction protective layer 004；Described heat conduction layer 001, insulating barrier 002, electric layer
003 and hot junction protective layer 004 all using flexible material, the first flexible material 1 and the closely spaced formation of the second flexible material 2
Heat conduction layer 001, the first flexible material 1 and the second flexible material 2 are arranged in parallel, and hot junction protective layer 004 is flexible insulation bar 7,
The thermal conductivity factor of the first flexible material 1 and flexible insulation bar 7 is below the thermal conductivity factor of the second flexible material 2, thus constitutes soft
Poor electrification structure warm in nature.
Electric layer 003 includes the thin film thermoelectric arm group of multiple rows of spaced and parallel arrangement, the arrangement side of every cluster film thermoelectric arm group
To the length direction parallel to the second flexible material 2, the thin film thermoelectric arm in thin film thermoelectric arm group is perpendicular to the second flexible material 2
Length direction, thin film thermoelectric arm group is identical with the quantity of the second flexible material 2, and every cluster film thermoelectric arm group includes spaced
P-type thin film thermoelectric arm 5 in a row and n-type thin film thermoelectric arm 6, the quantity phase of p-type thin film thermoelectric arm 5 and n-type thin film thermoelectric arm 6
With between adjacent p-type thin film thermoelectric arm 5 and the cold end of n-type thin film thermoelectric arm 6 and hot junction between by copper conductor 4 series connection even
Connect so that each thin film thermoelectric arm is cascaded in every cluster film thermoelectric arm group；Often cluster film thermoelectric arm group two ends is thin
Copper conductor 4 is respectively connected with the cold end of film thermoelectric arm, each group thin film thermoelectric arm group is by being connected to the thin film thermoelectric at respective two ends
Copper conductor 4 in arm cold end is connected in parallel.
In the cold end position of every cluster film thermoelectric arm group, in addition to the thin film thermoelectric arm at two ends, remaining thin film thermoelectric arm with
Adjacent p-type thin film thermoelectric arm 5 is become one group and is connected in series by copper conductor 4 with n-type thin film thermoelectric arm 6, cold end position
Copper conductor 4 on can with radiating fin.In the hot junction position of every cluster film thermoelectric arm group, all thin film thermoelectric arms are with adjacent
P-type thin film thermoelectric arm 5 become one group with n-type thin film thermoelectric arm 6 and be connected in series by copper conductor 4.
Preferably flexible insulation bar 7 is laid on above the hot junction of thin film thermoelectric arm in every cluster film thermoelectric arm group, as
Hot junction protective layer 004, the cold end of the thin film thermoelectric arm in every cluster film thermoelectric arm group is located at each self-corresponding first flexible material 1
Top, flexible insulation bar 7 be located at each self-corresponding second flexible material 2 surface.
As shown in figure 8, the fin being equipped with for radiating is preferably connected on the copper conductor 4 of thin film thermoelectric arm cold end.
P-type thin film thermoelectric arm 5 in preferably every cluster film thermoelectric arm group and the hot junction end face position of n-type thin film thermoelectric arm 6
Middle directly over corresponding second flexible material 2.
The length-width ratio of preferably p-type thin film thermoelectric arm 5 or n-type thin film thermoelectric arm 6 is 10:1, and adjacent p-type thin film is hot
Spacing between electric arm 5 and n-type thin film thermoelectric arm 6 is 100 ~ 500 μm.
The coefficient of heat conduction of preferred first flexible material 1 is 0.01～0.1w/m k, the heat biography of the second flexible material 2
Leading coefficient is 20 ~ 100w/ m k.
Preferred first flexible material 1 is internal to be solid construction.
Thermoelectric unit is constituted by a pair of p-type thin film thermoelectric arm in thin film thermoelectric arm group and n-type thin film thermoelectric arm.
The heat conduction layer 001 of the present invention is by a kind of highly heat-conductive material and another kind of low Heat Conduction Material is spaced forms.
As Fig. 2, the second flexible material 2 is cut into the different strip of width with the first flexible material 1, width ratio can be according to reality
Situation is optimized, and then with heat conductive silica gel, their alternate bondings is got up, constitutes heat conduction layer 001.
As Fig. 2, Fig. 5, the material of insulating barrier 002 can be selected for pet film.
Copper conductor 4 in electric layer 003, is obtained by the method for magnetron sputtering on insulating barrier 002.
In electric layer 003, the material of preferred p-type thin film thermoelectric arm 5 is carbon nano tube compound material film, preferred n
The material of type thin film thermoelectric arm 6 has the nanometer tube composite materials film of reducing agent for chemical doping.N-type thin film thermoelectric arm and p-type
The processing method of thin film thermoelectric arm is identical, is all obtained using method for printing screen.
The hot junction protective layer 004 of the thin film thermoelectric arm that the present invention arranges on electric layer 003: the coefficient of heat conduction is low
The rectangular strip of material cutting, width and length are consistent with the second flexible material 2 in heat conduction layer, and thickness is 100 ~ 300 μ
m.Flexible insulation bar 7 covers the hot junction of thin film thermoelectric arm, forms hot junction protective layer 004.In heat conduction layer 001 first is flexible
In material 1 and hot junction protective layer 004, the material of flexible insulation bar 7 can be same material or non-same material.
The external part of flange-cooled copper conductor 4 is connected and just can form loop, this cellular construction is attached to high temperature heat source
Surface, you can generated electricity using the temperature difference between high temperature heat source temperature and ambient air temperature.
The plane flexibility thermo-electric generation structure of the present invention has flexibility, curved surface of can fitting.
The operation principle of the present invention is as follows:
According to Seebeck effect, in the closed-loop path being constituted with p-type thin film thermoelectric arm and n-type thin film thermoelectric arm, work as film
When thermoelectric arm two ends have temperature difference, two ends will produce voltage.Because the voltage that single thermoelectric unit produces is very low, therefore,
Can using the mode of " hot road in parallel, circuit connected in series ", thermoelectric unit is designed and arranges the single multipair electrothermal module of formation from
And improve output voltage values.
Highly heat-conductive material is close to heat source surface with low Heat Conduction Material lower surface simultaneously, and upper surface exposes in low temperature environment.By
Very big in coefficient of heat conduction difference, around under the joint effect such as cross-ventilation, radiation, the different material of two kinds of coefficients of heat conduction
Be delivered to upper surface temperature different, thus producing thermograde.Thin film thermoelectric arm is placed in parallel in heat conduction layer upper surface,
Generated electricity using this thermograde.When low Heat Conduction Material heat-insulating property is very good, the temperature difference in local environment can fully fall
In hot junction and the cold end of thermoelectric arm, thermoelectrical efficiency is just greatly improved.Realize the flexibility of plane thermo-electric generation structure, with glass
Glass, silicon compare as the rigid structure of substrate, present configuration have highly flexible, light, increased robustness, its flexibility
It is adapted to curved surface.
Invention increases hot junction protective layer and cold end radiating, be so conducive to weakening influencing each other of hot junction and cold end,
Increase temperature gradient.Heat conduction layer also has supporting role while the temperature difference needed for realizing obtaining.
One of which preparation process in being embodied as the present invention, specifically includes:
1: processing heat conduction layer:: buy graphite heat-conducting fin and pdms solution, use spin coating taking graphite heat-conducting fin and pdms as a example
Machine spin coating pdms, solidification.The pdms of consistency of thickness and graphite heat-conducting fin are cut into the strip that length is 50mm, width is respectively
4mm and 1mm.With heat conductive silica gel, their alternate bondings are got up.The coefficient of heat conduction of graphite heat-conducting fin and pdms is respectively 20 w/
M k and 0.18w/m k.
2: processing insulating barrier: the insulation smooth clean pet film of layer choosing, it is cut into 50x50mm square with scissors.
3: processing electric layer:
The method that copper conductor 4 with radiating fin is processed on insulating barrier 002:
The first step: select 4 inch glass sheets as substrate, glass chip bottom is used respectively acetone, alcohol, deionized water clear
Wash clean.Select smooth clean pet film, be cut into square with scissors, pet film is placed on substrate of glass centre, uses pi
Adhesive tape is pasted onto glass chip basal surface along pet film surrounding, notes keeping the smooth cleaning of pet film in taping process.
Second step: spin coating photoresist on pet film, then put and dry on warm table 5 minutes, finally with the phenanthrene of processing copper conductor
Woods mask board to explosure develops.
3rd step: from copper and chromium target, sputter copper conductor 4 with magnetron sputter on pet film surface.
4th step: the pet film having sputtered copper conductor 4 is put removal photoresist in acetone, then puts cleaning in alcohol,
Obtain the required copper conductor 4 with radiating fin afterwards.
In electric layer 003, p-type thin film thermoelectric arm 5 is Carbon Nanotubes/Polystyrene Nanocomposites, n-type thin film thermoelectric arm 6
Carbon nano tube compound material for pei and nabh4 that adulterate simultaneously.P-type thin film thermoelectric arm 5 and the preparation side of n-type thin film thermoelectric arm 6
Method is identical, so taking prepare p-type thin film thermoelectric arm 5 as a example.As shown in Figure 6, Figure 7, in the insulating barrier of the copper conductor 4 processing
The printed panel 8 of processing p-type thin film thermoelectric arm on 002, is placed according to the copper conductor pattern on insulating barrier.Had with 1,2- dichloro-benzenes
Machine solution dissolves Carbon Nanotubes/Polystyrene Nanocomposites, makes CNT dispersed in the solution.With spatula mixing all
Even slurry is applied in the galley 8 of processing p-type thin film thermoelectric arm, and slurry fills up the cavity 9 in printed panel, dries, and peels off
Galley, eventually forms p-type thin film thermoelectric arm 5.The length of p-type thin film thermoelectric arm is 2.5mm, and width is 0.25mm, and thickness is
20 μm, p-type thin film thermoelectric arm is the same with the size of n-type thin film thermoelectric arm, and spacing is 0.25mm.
4: processing hot junction protective layer:
The material selecting is pdms, and the length of the pdms of cutting is 50mm, and width is 1mm, and thickness is 200 μm.
The hot junction of every heat extraction electric unit is all covered with the pdms strip processing.
The external part of copper conductor 4 is linked to be loop, you can generated electricity using the temperature difference.
Laboratory processing the series connection of the 20 pairs of thermoelectric units plane flexibility thermo-electric generation structure laminating human body skin, outward
Boundary's air is 24 DEG C, and the temperature difference of acquisition is 1.5k, voltage about 2mv, and the thermoelectric unit number with series connection increases, and voltage can obtain
To significantly being lifted.
Described graphite and pdms, pet material all can use the good flexible material of other performance to substitute, in different heat sources and should
With, under external environment, the size of this thermo-electric generation size and thin film thermoelectric arm can be carried out optimizing.
Above-mentioned specific embodiment is used for illustrating the present invention, rather than limits the invention, the present invention's
In spirit and scope of the claims, any modifications and changes that the present invention is made, both fall within the protection model of the present invention
Enclose.
Claims (7)
1. a kind of plane flexibility thermo-electric generation structure it is characterised in that: include the heat transfer of laying of arranging successively from below to up
Layer (001), insulating barrier (002), electric layer (003) and hot junction protective layer (004)；Described heat conduction layer (001), insulating barrier
(002), electric layer (003) and hot junction protective layer (004) be all using flexible material, the first flexible material (1) and the second flexible material
Material (2) closely spaced formation heat conduction layer (001), hot junction protective layer (004) is flexible insulation bar (7), the first flexible material
The thermal conductivity factor of material (1) and flexible insulation bar (7) is below the thermal conductivity factor of the second flexible material (2).
2. a kind of plane flexibility thermo-electric generation structure according to claim 1 it is characterised in that: described electric layer
(003) include the thin film thermoelectric arm group of multiple rows of spaced and parallel arrangement, the orientation of every cluster film thermoelectric arm group is parallel to second
Flexible material (2), every cluster film thermoelectric arm group includes spaced p-type thin film thermoelectric arm (5) in a row and n-type thin film thermoelectricity
Arm (6), p-type thin film thermoelectric arm (5) is identical with the quantity of n-type thin film thermoelectric arm (6), adjacent p-type thin film thermoelectric arm (5) and n
All it is connected in series by copper conductor (4) and hot junction between the cold end of type thin film thermoelectric arm (6), each group thin film thermoelectric arm group is led to
The copper conductor (4) crossed in the thin film thermoelectric arm cold end being connected to respective two ends is connected in parallel；
Described flexible insulation bar (7) is laid on above the hot junction of thin film thermoelectric arm in every cluster film thermoelectric arm group, protects as hot junction
Sheath (004), every cluster film thermoelectric arm group is located at the top of each self-corresponding first flexible material (1), flexible insulation bar (7) position
Surface in each self-corresponding second flexible material (2).
3. a kind of plane flexibility thermo-electric generation structure according to claim 2 it is characterised in that: described be connected to film
Fin for radiating is equipped with the copper conductor (4) of thermoelectric arm cold end.
4. a kind of plane flexibility thermo-electric generation structure according to claim 2 it is characterised in that: described every cluster film
The hot junction end face of the p-type thin film thermoelectric arm (5) in thermoelectric arm group and n-type thin film thermoelectric arm (6) is located at the corresponding second flexible material
Middle directly over material (2).
5. a kind of plane flexibility thermo-electric generation structure according to claim 2 it is characterised in that: described p-type thin film
The length-width ratio of thermoelectric arm (5) or n-type thin film thermoelectric arm (6) is 10:1, and adjacent p-type thin film thermoelectric arm (5) and n-type thin film are hot
Spacing between electric arm (6) is 100 ~ 500 μm.
6. a kind of plane flexibility thermo-electric generation structure according to claim 1 it is characterised in that: described first is flexible
The coefficient of heat conduction of material (1) is 0.01～0.15w/m k, and the coefficient of heat conduction of the second flexible material (2) is 20 ~ 100w/
m·k.
7. a kind of plane flexibility thermo-electric generation structure according to claim 1 it is characterised in that: described first is flexible
It is solid construction inside material (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410342835.5A CN104183691B (en) | 2014-07-18 | 2014-07-18 | Planar flexible thermoelectric power generation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410342835.5A CN104183691B (en) | 2014-07-18 | 2014-07-18 | Planar flexible thermoelectric power generation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104183691A CN104183691A (en) | 2014-12-03 |
| CN104183691B true CN104183691B (en) | 2017-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410342835.5A Expired - Fee Related CN104183691B (en) | 2014-07-18 | 2014-07-18 | Planar flexible thermoelectric power generation structure |
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| CN104410331B (en) * | 2014-12-04 | 2017-01-25 | 浙江大学 | Flexible self-supported type thermoelectric power generation structure |
| JP6539917B2 (en) * | 2014-12-26 | 2019-07-10 | リンテック株式会社 | Thermally conductive adhesive sheet, method of manufacturing the same, and electronic device using the same |
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| CN106206923B (en) * | 2016-08-30 | 2018-06-08 | 北京理工大学 | A kind of flexible wearable temperature difference electricity generation device |
| US20190307368A1 (en) * | 2016-11-14 | 2019-10-10 | International Thermodyne, Inc. | Thermoelectric generators and applications thereof |
| CN107727263A (en) * | 2017-10-19 | 2018-02-23 | 华为技术有限公司 | Thermocouple and temperature sensor |
| CN108831947A (en) * | 2018-06-14 | 2018-11-16 | 东华大学 | A kind of flexible photovoltaic thermoelectric integral compound power-generating device |
| CN109817801A (en) * | 2019-03-08 | 2019-05-28 | 冠冷科技(深圳)有限公司 | A kind of flexible semiconductor refrigerating plant of special construction |
| CN110265538A (en) * | 2019-05-30 | 2019-09-20 | 清华大学 | Flexible thermoelectric generator and its preparation method and application system |
| CN111092145B (en) * | 2019-12-23 | 2023-01-24 | 南方科技大学 | Thermoelectric power generation part and preparation method thereof |
| CN113299818A (en) * | 2021-04-14 | 2021-08-24 | 江西理工大学 | W-shaped foldable thin film flexible thermoelectric power generation device |
| CN113486576B (en) * | 2021-06-23 | 2024-02-13 | 北京理工大学 | Intelligent thermoelectric generation sheet optimization method based on improved artificial bee colony algorithm |
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| TW201126779A (en) * | 2010-01-20 | 2011-08-01 | Nat I Lan University | Flexible thermoelectric energy converter and manufacturing method thereof |
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| CN103178754A (en) * | 2013-03-19 | 2013-06-26 | 浙江大学 | Flexible temperature differential power generation micro-unit structure |
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| CN203967136U (en) * | 2014-07-18 | 2014-11-26 | 浙江大学 | The flexible thermo-electric generation structure of a kind of plane |
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| TW201126779A (en) * | 2010-01-20 | 2011-08-01 | Nat I Lan University | Flexible thermoelectric energy converter and manufacturing method thereof |
| WO2011116303A1 (en) * | 2010-03-19 | 2011-09-22 | Micropen Technologies Corporation | Thermocouple device |
| KR20140036793A (en) * | 2012-09-18 | 2014-03-26 | 한국전자통신연구원 | Thermoelectric device with graphene heat dissipator and method of fabricating the same |
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| CN203967136U (en) * | 2014-07-18 | 2014-11-26 | 浙江大学 | The flexible thermo-electric generation structure of a kind of plane |
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