WO2016090603A1 - Dispositif de conversion thermoélectrique utilisant comme bras électrique un semi-conducteur dopé non uniformément - Google Patents

Dispositif de conversion thermoélectrique utilisant comme bras électrique un semi-conducteur dopé non uniformément Download PDF

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Publication number
WO2016090603A1
WO2016090603A1 PCT/CN2014/093582 CN2014093582W WO2016090603A1 WO 2016090603 A1 WO2016090603 A1 WO 2016090603A1 CN 2014093582 W CN2014093582 W CN 2014093582W WO 2016090603 A1 WO2016090603 A1 WO 2016090603A1
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WO
WIPO (PCT)
Prior art keywords
arm
semiconductor
uniformly doped
thermoelectric conversion
electric
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PCT/CN2014/093582
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English (en)
Chinese (zh)
Inventor
叶磊
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厦门兰智科技有限公司
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Priority to PCT/CN2014/093582 priority Critical patent/WO2016090603A1/fr
Publication of WO2016090603A1 publication Critical patent/WO2016090603A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Definitions

  • the invention relates to the field of thermal energy conversion into electric energy technology, in particular to a thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm.
  • Temperature difference power generation and heat transfer can be realized by using the Seebeck effect, the Peltier effect or the Thomson effect.
  • the thermoelectric power is converted into electric energy by using the ambient temperature, which is an ideal clean new energy source.
  • the temperature difference power generation is limited in conversion efficiency, generally below 10%, which severely limits the popularization and promotion of the technology.
  • the main reason for the low conversion efficiency is that the absorption capacity of the thermoelectric power generation device is not sufficient, but the reverse resistance voltage formed by the heat release portion is too high, so that the output voltage of the thermoelectric power generation device is low.
  • thermoelectric power generation device must rely on high and low temperature differences, and it is impossible to realize thermoelectric conversion without temperature difference. Conversely, when there is no external energy input, heat transfer can be realized without temperature difference environment, and the use of ambient temperature energy is limited. Convenience.
  • FIG. 1 a schematic structural view of a prior art thermoelectric power generation device having at least a high temperature endothermic node, a low temperature heat release node, and two components of two electric arms, wherein two electric arms are homogeneous semiconductors
  • the properties are shown in Figure 2.
  • the homogeneous temperature difference power generation system can be decomposed into three parts with a thermoelectric potential drop, which are the thermoelectric potential drop of the high temperature endothermic node + ⁇ Ea, the thermoelectric potential drop of the low temperature exothermic node - ⁇ Eb, and the exothermic electricity
  • the high and low temperature nodes generate a thermoelectric potential drop by superimposing the Seebeck effect and the Thomson effect.
  • the arms are homogeneous, the semiconductor properties are everywhere, and the thermoelectric potential drop is completely realized by the temperature difference in the length of the arm.
  • the magnitude is small.
  • the low temperature node and the arm thermoelectric potential drop are the resistance voltages that are opposite to the temperature difference voltage, which is an unfavorable factor that contributes to the heat release loss and weakens the output voltage and electric power.
  • thermoelectric power generation device cannot be satisfied either.
  • thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm to improve thermoelectric conversion efficiency.
  • the solution of the present invention is:
  • thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm comprising an electric arm, in the direction of the switching current, all or part of the electric arm is deliberately non-uniformly doped, forming an uneven distribution of semiconductor properties, intentionally non-uniformly doped
  • All or at least a part of the hybrid arm section is an endothermic portion, which is thermally connected to the heat source, and takes in thermal power for thermoelectric conversion; at least a part of the arm serves as a heat releasing portion.
  • the intentionally non-uniformly doped arm segments have different doping element concentrations, or The same doping element type, or different doping element ratio.
  • At least one of the doping concentrations in the deliberately non-uniformly doped arm segment is monotonically increasing or monotonically decreasing along the direction of the switching current.
  • the ratio of the high and low doping concentrations at both ends of the arm section where the doping concentration monotonously rises or falls is ⁇ 2, or ⁇ 2 * 10 3 , or ⁇ 2 * 10 6 , or ⁇ 2 * 10 9 , or ⁇ 2 * 10 12 .
  • the arm is composed of a P-type and an N-type semiconductor, or a single P-type semiconductor, or a single N-type semiconductor.
  • the semiconductor property distribution is from P- to P+, or from N+ to N-, or from N to P monotonically varying, the heat conduction of all or part of the surface with the heat source or the heat source.
  • the medium is in contact with or close to the thermal connection as the endothermic portion; in the positive direction of the converted current vector, all or part of the semiconductor property distribution from P+ to P-, or from N- to N+, or from P to N monotonically changing
  • the surface is in contact with or close to the exothermic environment or the heat dissipating medium to achieve a thermal connection as a heat releasing portion.
  • the heat source material or the medium that transmits the heat source energy, the substance in the heat dissipation environment or the heat dissipation medium is a poor conductor or insulator of electricity.
  • the arms are all distributed by monotonically varying semiconductor properties, along the positive direction of the converted current vector, the semiconductor properties are distributed from P- to P+, or from N+ to N-, or from N to P.
  • the electrical arm is distributed along the positive direction of the current vector, the semiconductor property distribution is from P- to P+, or from N+ to N-, or the total length L1 of the monotonously varying portion from N to P, and the semiconductor property distribution is from P+ to P- Or the ratio of the total length L2 from N- to N+, or a monotonously varying portion from P to N ⁇ 1.5.
  • the arm is set to one, and the arm has a monotonously rising or monotonically decreasing semiconductor property distribution along all or a part of the direction of the switching current.
  • the first end of the arm is connected by a conductor or a semiconductor and a circuit, and the arm is intentionally non-uniform.
  • Doped arm segment and heat source or pass The medium that transfers the heat source energy is close to or in contact, and the heat connection is used as the heat absorption portion; the connection node of the arm and the conductor acts as a heat release portion, which is close to or in contact with the environment or the heat dissipation medium; the arm is a single type of P or N type
  • the semiconductor, the electric arm fully or partially forms a semiconductor property distribution in which the intentionally non-uniformly doped arm segments are monotonously changed; or different types of element doping are formed at different positions, and both P-type and N-type semiconductor types are formed, and the intentional non-deformation is formed.
  • Uniformly doped arm segment monotonically changing semiconductor property distribution.
  • the arm is set to have two semiconductor properties of P-type and N-type, and each arm has a monotonously rising or monotonically decreasing doping concentration in all or a part of the direction of the switching current, and the arm doping concentration is high.
  • One end P+ or N+ is connected to the other end of the other arm with a high doping concentration N+ or P+, and the other end of the two arms with weak semiconductor properties is connected to form a loop;
  • the intentionally non-uniformly doped arm section is used as the heat absorbing part, and the heat source or
  • the medium transmitting the heat source energy is in contact with or close to the node, and the weaker end of the arm semiconductor is connected to the node, and the end of the arm semiconductor having a strong property is connected to the node as a heat releasing portion, which is in contact with or close to the environment or the heat dissipating medium.
  • the arm is set to have the same semiconductor property as P or the same N-type, and each arm has a monotonously rising or monotonously decreasing doping concentration along all or a part of the switching current direction, and the doping in each arm is performed.
  • the higher concentration end P+ or N+ is connected to the other end of the other arm with a weaker doping concentration P- or N- to form a loop; the arm deliberately non-uniformly doped the arm section as the endothermic part, and the heat source or heat source energy
  • the medium is in contact with or close to achieve a thermal connection, and at least one of the connecting nodes at both ends of the arm is an exothermic node.
  • the present invention transforms the current direction, and all or part of the electric arm is deliberately non-uniformly doped to form an uneven semiconductor property distribution, so that all or at least a part of the intentionally non-uniformly doped arm section is an endothermic part.
  • At least a part of the arm acts as a heat releasing portion, and the arm forms a deliberately non-uniformly doped arm segment, which can be decomposed into two basic parts: a node thermoelectric potential drop and an arm segment thermoelectric potential drop, wherein Electricity
  • the armature thermoelectric potential drop + ⁇ Ec is in the same direction as the output voltage, and the node thermoelectric potential drop ⁇ Ea and ⁇ Eb may both be resistant voltages, and take negative values, and may take positive and negative values, respectively.
  • the invention can be configured with an exothermic node, and the other node and the intentionally non-uniformly doped arm segment serve as heat absorption portions, and the direction of the thermoelectric potential drop is consistent with the final voltage direction, so the ratio of the resist voltage is reduced, the conversion efficiency and the power are reduced. Can be improved.
  • the arm relies on its own semiconductor property distribution to realize the total thermoelectric potential difference ⁇ Ec within a long distance of the connecting node, which is the absolute difference of the thermoelectric potential difference ⁇ Ea or ⁇ Eb formed by the short-distance semiconductor property mutation formed by the connection node depending on the material difference.
  • the value is larger, and the difference between the two is larger than the absolute value of the difference in the conventional homogeneous arm device. Therefore, the voltage value remaining after the cancellation is higher, and the output voltage, power, and conversion efficiency are higher.
  • thermoelectric conversion device 1 is a schematic structural view of a prior art thermoelectric conversion device
  • thermoelectric conversion device 2 is a schematic view showing the doping concentration of an arm of a prior art thermoelectric conversion device
  • 3a and 3b are schematic diagrams showing the doping of the arm of the present invention.
  • Figure 4 is a schematic structural view of a first embodiment of the present invention.
  • Figure 5 is a schematic structural view of a second embodiment of the present invention.
  • Figure 6 is a schematic structural view of a third embodiment of the present invention.
  • Fig. 7 is a schematic structural view of a fourth embodiment of the present invention.
  • the invention discloses a thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm, Including the arm, in the direction of the switching current, all or part of the arm is deliberately non-uniformly doped, forming an uneven distribution of semiconductor properties, so that all or at least a part of the intentionally non-uniformly doped arm section is an endothermic part, and a heat source
  • the thermal connection is performed, and the thermal power is taken in for thermoelectric conversion; at least a part of the electric arm serves as a heat releasing portion.
  • Deliberately non-uniformly doped arm segments are intentionally controlled along the direction of thermoelectric conversion current, including but not limited to crystal growth, raw material mixing, high temperature diffusion, ion implantation and other doping processes, through the control of process flow and parameters. For example, controlling the concentration, type, ratio of doping substance, pressure of doping process, width and spacing distance of doping window, window moving speed, process temperature, processing time, scanning area selection of ion implantation, etc.
  • All or some parts are non-uniformly doped, so that all or part of the arm segments after doping have different doping element concentrations at different positions, or different doping element types, or different doping elements
  • semiconductor properties including not only the P-type, N-type and intrinsic types of semiconductor types, but also the P or N type, but the strength of semiconductor properties. s difference.
  • At least one of the doping concentrations in the deliberately non-uniformly doped arm segment is monotonically increasing or monotonically decreasing along the direction of the switching current.
  • the ratio of the high and low doping concentrations at both ends of the arm section where the doping concentration monotonically rises or falls is ⁇ 2, or ⁇ 2 * 10 3 , or ⁇ 2 * 10 6 , or ⁇ 2 * 10 9 , or ⁇ 2 * 10 12 .
  • the ratio of the high and low doping concentration at both ends of the arm section is ⁇ 2, and the two ends of the intentionally non-uniformly doped arm section will form a small difference in thermoelectric potential at the same temperature condition, ensuring strict temperature at both ends of the intentionally non-uniform doping. Under equal conditions, a voltage difference of not zero will occur.
  • thermoelectric potential between the two ends of the deliberately non-uniformly doped arm segment will gradually increase. Under the condition that the temperature at both ends of the intentionally non-uniformly doped arm segment is strictly equal, the voltage difference will follow. Increased.
  • the semiconductor doping concentration can be as high as ten or more than ten units, so the ratio of the concentration at both ends can be selected in a wide range.
  • the doping concentration of each position in the entire non-uniformly doped arm section affects the output voltage, current, power, etc. of the entire thermoelectric conversion device during the thermoelectric conversion process.
  • the arm may be composed of a P-type and an N-type semiconductor, or a single P-type semiconductor, or a single N-type semiconductor.
  • the semiconductor property is distributed from P- to P+, or from N+ to N-, or from N to P in a monotonously continuously changing portion, all or part of its surface with a heat source or a heat transfer medium that transfers heat energy.
  • the heat source material or the medium that transmits the energy of the heat source, the substance in the heat dissipation environment or the heat dissipation medium, is a poor conductor or insulator of electricity.
  • a continuous non-uniformly doped arm section in the process of endothermic power generation, it can be equivalent to a battery, and the front and rear ends can be regarded as the two poles of the battery.
  • the heat source material or the heat conductive medium is in contact with it, If the resistivity is small, it is equivalent to connecting an electric circuit in parallel with the two poles of the arm section, which will form electric power dissipation, which is equivalent to a certain degree of short circuit.
  • the heat source material or the heat transfer medium is required to have as high a resistivity as possible, preferably an insulator.
  • a resistivity as possible, preferably an insulator.
  • it can also be configured with weak electrical conductivity, but the overall resistivity must be maintained at a large level.
  • the conductor or semiconductor node connected to the arm in the thermoelectric conversion device also has the characteristics of heat absorption or heat release, and is also a part of voltage formation, and the heat source or heat medium or heat dissipating material in contact with them also needs to have sufficient insulation performance. .
  • the entire arm can be configured to monotonically vary the distribution of semiconductor properties along the same direction.
  • the semiconductor properties are distributed from P- to P+, or from N+ to N-, or from N to P, along the positive direction of the converted current vector.
  • the same arm can also be divided into multiple segments, some of which are uniformly doped and have the same semiconductor property distribution characteristics, and the other segments are along the positive direction of the same conversion current vector, from the current input end to the other end of the output.
  • a distribution of semiconductor properties from P- to P+, or from N+ to N-, or from N to P is achieved.
  • the arm can also be divided into multiple segments along the positive direction of the converted current vector, wherein the semiconductor properties are distributed from P- to P+, or from N+ to N-, or from N to P monotonically varying portions of the total length L1, and semiconductor property distribution from The ratio of P+ to P-, or from N- to N+, or the total length L2 of the monotonously varying portion from P to N is ⁇ 1.5, and an excessively small length ratio causes a significant reduction in conversion efficiency.
  • the semiconductor properties monotonously change in a certain direction and have two different absolute values of the change slope
  • the ratio of the slope of the change in the semiconductor property is not equal to the ratio of the voltage increment. Generally, the ratio of the slope of the change in the semiconductor property is larger, that is,
  • the internal semiconductor property change slopes are constant
  • the absolute value of the voltage U2 generated by the longer arm L2 is more high.
  • the semiconductor property variation inside the endothermic arm segment is adjusted to be slower, the overall length is longer, and the length of the other semiconductor properties in the opposite direction of the arm is shorter and the change is faster. .
  • thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm
  • a non-uniformly doped semiconductor is disclosed in the present invention.
  • the arm is set to one, and the arm has a monotonously rising or monotonically decreasing semiconductor property distribution along all or a part of the direction of the switching current.
  • the first end of the arm is connected by a conductor or a semiconductor and a circuit, and the arm is intentionally non-uniformly doped.
  • the arm segment is in close contact or contact with the heat source or the medium that transfers the energy of the heat source to realize the thermal connection as the heat absorbing portion; the connection node between the arm and the conductor acts as a heat releasing portion, and is close to or in contact with the environment or the heat dissipating medium.
  • the arm is a P or N type single type semiconductor, and all or part of the arm forms a semiconductor property distribution in which the intentionally non-uniformly doped arm segments monotonously change.
  • thermoelectric conversion device using a non-uniformly doped semiconductor as an electric arm is disclosed.
  • the electric arm is set to have two semiconductor properties: P-type and N-type. Root, each arm has a monotonously rising or monotonically decreasing doping concentration along all or part of the direction of the switching current, and one end of the arm doping concentration is P+ or N+ and the other arm is doped to a higher concentration end N+ or P+ Connection, the other end of the two arms with weak semiconductor properties are connected to form a loop; the intentionally non-uniformly doped arm segment acts as an endothermic portion, in contact with or close to the heat source or the medium that transfers the energy of the heat source, and the semiconductor properties of the arm are weak.
  • One end is connected to the node, and one end of the arm semiconductor having a strong property is connected to the node as a heat releasing portion, which is in contact with or close to the environment or the heat dissipating medium; or, the intentionally non-uniformly doped arm segment serves as an endothermic portion, and the heat source or the heat source energy
  • the medium is in contact with or close to the end, and the weaker end of the arm semiconductor is connected to the node as the endothermic part, and the end of the electric arm semiconductor having the strong attribute is connected to the node as the exothermic part. In contact with or near ambient or a heat medium.
  • the electric arm can also be set to have two semiconductor properties of the same P or the same N type, and each arm has a monotonously rising or monotonously decreasing doping concentration along all or part of the direction of the switching current, in each arm.
  • One end of the doping concentration P+ or N+ is connected to the other end of the other arm with a weak doping concentration P- or N- to form a loop; the arm deliberately non-uniformly doped the arm section as an endothermic part, with heat source or transmission
  • the medium of the heat source energy contacts or approaches to achieve thermal connection, and at least one of the connection nodes at both ends of the arm is an exothermic node.
  • thermoelectric conversion device composed of a non-uniformly doped arm
  • two or more electrical connections in series, parallel or serial combination can be realized to adjust the output capability and obtain the required
  • the output parameters, the stages may be the same structure, or may be different single or multiple arm structures, and may also be similarly electrically connected to other conventional homogeneous temperature difference power generating devices.
  • thermoelectric potential levels at different positions inside the non-uniformly doped electric arm are still different, or a thermoelectric potential drop is formed, thereby forming a voltage.
  • it completely relies on the drop of the doping concentration in the arm, and can also generate output voltage, current, and external output power, and can continue to work without temperature difference.
  • Applications of the present invention include, but are not limited to, fuel generators, solar power generation, seawater temperature power generation, temperature power generation, air conditioning equipment, refrigerator freezers, air energy heating equipment, ice machines, waste heat recovery equipment, active heat sinks, desalination, Electric-powered cars, airplanes, ships, portable equipment, etc.

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Abstract

L'invention concerne un dispositif de conversion thermoélectrique utilisant comme bras électrique un semi-conducteur dopé non uniformément, qui comprend un bras électrique. Dans une direction de conversion de courant, le bras électrique est entièrement ou partiellement dopé non uniformément de façon intentionnelle pour former une distribution non uniforme des propriétés semi-conductrices. La section du bras électrique qui est intentionnellement dopée non uniformément est entièrement ou au moins partiellement utilisée comme partie d'absorption de chaleur, et est thermiquement reliée à une source de chaleur et reçoit de la chaleur afin d'effectuer une conversion thermoélectrique. Au moins une partie du bras électrique est utilisée comme partie de dissipation de chaleur. Par conséquent, le rendement de conversion thermoélectrique est amélioré, et le dispositif peut fonctionner dans une situation sans différence de température ou même avec une différence de température négative.
PCT/CN2014/093582 2014-12-11 2014-12-11 Dispositif de conversion thermoélectrique utilisant comme bras électrique un semi-conducteur dopé non uniformément WO2016090603A1 (fr)

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PCT/CN2014/093582 WO2016090603A1 (fr) 2014-12-11 2014-12-11 Dispositif de conversion thermoélectrique utilisant comme bras électrique un semi-conducteur dopé non uniformément

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111573787A (zh) * 2020-04-14 2020-08-25 华南师范大学 一种利用温差发电技术进行电化学连续除盐的方法

Citations (3)

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Publication number Priority date Publication date Assignee Title
CN103180984A (zh) * 2010-08-23 2013-06-26 排放技术有限公司 用于热电模块的半导体元件及其制造方法
CN103367624A (zh) * 2013-06-16 2013-10-23 贺新 半导体发电法及由此制造的半导体发电机
CN103918095A (zh) * 2011-09-08 2014-07-09 耶德研究和发展有限公司 效率增强的热电装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103180984A (zh) * 2010-08-23 2013-06-26 排放技术有限公司 用于热电模块的半导体元件及其制造方法
CN103918095A (zh) * 2011-09-08 2014-07-09 耶德研究和发展有限公司 效率增强的热电装置
CN103367624A (zh) * 2013-06-16 2013-10-23 贺新 半导体发电法及由此制造的半导体发电机

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111573787A (zh) * 2020-04-14 2020-08-25 华南师范大学 一种利用温差发电技术进行电化学连续除盐的方法
CN111573787B (zh) * 2020-04-14 2022-08-09 华南师范大学 一种利用温差发电技术进行电化学连续除盐的方法

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