WO2016083400A1 - Lichtemittierendes bauelement - Google Patents
Lichtemittierendes bauelement Download PDFInfo
- Publication number
- WO2016083400A1 WO2016083400A1 PCT/EP2015/077544 EP2015077544W WO2016083400A1 WO 2016083400 A1 WO2016083400 A1 WO 2016083400A1 EP 2015077544 W EP2015077544 W EP 2015077544W WO 2016083400 A1 WO2016083400 A1 WO 2016083400A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- contact structure
- electrode
- emitting component
- luminous
- Prior art date
Links
- 239000010410 layer Substances 0.000 description 58
- 238000000926 separation method Methods 0.000 description 25
- 238000009413 insulation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000011218 segmentation Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000265 homogenisation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- a light-emitting component is specified.
- An object to be solved is to specify a light-emitting component which has at least one luminous surface
- Luminance profile is emitted.
- the light-emitting component comprises
- At least one active layer stack which is intended to generate light. That is, in the operation of the
- the light emitting device is generated in at least one active layer stack of light.
- colored or white light can be generated in the active layer stack.
- the active layer stack includes, for example, organic layers.
- the light-emitting component may then in particular be an organic light-emitting diode (OLED).
- the light emitting device may comprise exactly one active layer stack or two or more active layer stacks. If the device has two or more active
- Layer stack includes, these may be arranged side by side in lateral directions.
- the active layer stacks are applied to a common carrier.
- the light emitting device is in the
- Main extension plane that is, along a lateral direction.
- the light-emitting component comprises a first electrode which comprises the at least one active electrode
- the first electrode can be in direct contact at least in places with, for example, an organic layer of the active layer stack.
- the first electrode is, for example, a cathode of the light-emitting component.
- the component comprises a second electrode, which electrically contacts the at least one active layer stack.
- the second electrode can do this
- an organic layer of the active for example, an organic layer of the active
- Layer stack are in direct contact, wherein the second electrode contacts the active layer stack, for example, from one side and in particular is on this side with the active layer stack in direct contact, that of the side on which the first electrode
- electrodes can at least in places parallel to Main extension plane of the light-emitting device run.
- the light-emitting component comprises
- the at least one luminous surface which is provided for the emission of light.
- the at least one luminous area extends at least in places parallel to the main extension plane of the light-emitting component. From the luminous area emitted light is emitted in at least one active layer stack. In this case, it is possible, in particular, for the light to be emitted in two opposite spatial directions, so that the light is radiated from an upper side of the at least one active layer stack and from a lower side facing away from the upper side of the at least one active layer stack.
- the light-emitting component emits the light in this way on both sides in two halves of the space, which are separated by the main extension plane of the light emitting device. Does the light emitting device more than one
- the light-emitting component can therefore be an organic light-emitting diode which emits light from its own
- the front and the back are emitting.
- the light-emitting component comprises a first contact structure which is connected to the first electrode
- the first contact structure is formed for example as a conductor, which is formed with an electrically conductive material and is located with the first electrode, for example, in direct Contact.
- the first contact structure may be formed as a metallization, which is applied to the first electrode.
- the first contact structure does not cover the first electrode completely, but only
- the light-emitting component comprises a second contact structure which is connected to the second electrode
- the second contact structure is in direct contact with the second electrode, wherein the second contact structure is the second
- Electrode in particular not full surface, but only
- the second contact structure may be formed as a conductor track, which is formed with an electrically conductive material.
- the second contact structure is applied as a metallization on the second electrode and covers the second electrode, for example in an edge region.
- the first contact structure surrounds a majority of the at least one luminous area and a large part of the second contact structure laterally. That is, the first one
- the at least one luminous surface and the second contact structure in lateral directions at least locally surrounded in the manner of a frame. That is, the first contact structure surrounds more than 50% of the length of an edge line, which the luminous area in the
- the first contact structure more than 50% of the second contact structure, that is, more than 50% of the length of the second contact structure is surrounded by the first contact structure. It is possible for the first contact structure to surround at least 60%, at least 70%, at least 80%, at least 90% or at least 95% of the at least one luminous area and / or the second contact structure laterally. Furthermore, it is possible that the first contact structure the
- Luminous surface and / or the second contact structure laterally completely surrounds.
- the second contact structure surrounds a majority of the at least one luminous area laterally. That is to say that the second contact structure is arranged in the lateral directions in the manner of a frame around the luminous area and surrounds more than 50% of an edge line enveloping the at least one luminous area laterally.
- the second contact structure can surround more than 60%, more than 70%, more than 80%, more than 90% or more than 95% of the luminous area. Furthermore, it is possible for the second contact structure to surround the at least one luminous area completely laterally.
- the light-emitting component comprises
- At least one active layer stack which is provided for generating light, a first electrode, the at least one active layer stack electrically
- a second electrode which electrically contacts the at least one active layer stack, at least one luminous surface, which is provided for the emission of light, a first contact structure, which is electrically conductively connected to the first electrode, a second
- Contact structure electrically connected to the second electrode is conductively connected, wherein the first contact structure laterally surrounds a majority of the at least one luminous area and a large part of the second contact structure and, the second contact structure, a majority of the at least one
- Luminous surface laterally surrounds.
- the light-emitting component is designed to be light-permeable at least in places in the area of at least one of the at least one luminous area.
- the light-emitting component it is possible for the light-emitting component to be transparent at any point of the at least one luminous area.
- the component is designed to be translucent in the region of at least one luminous surface and in the region of at least one luminous surface
- Translucent means here and below that at least 50%, in particular at least 75%, preferably at least 85% of incident on a translucent point
- the light-emitting component can in particular
- the light-emitting component can thus be a transparent OLED emitting on both sides.
- the light-emitting component 1 described here is based inter alia on the knowledge that
- translucent light-emitting components in particular transparent organic light-emitting diodes, over the course of their luminous surface have a particularly inhomogeneous luminance profile.
- the luminance profile is especially in
- Light emitting diodes for example, having a reflective first or second electrode, inhomogeneous.
- translucent light-emitting device can contribute.
- the first electrode and / or the second electrode is designed to be reflective at least in places.
- Reflectively formed here and below means, for example, that at least 50%, in particular at least 75%, preferably at least 85%, of visible light incident at a reflecting point is reflected by the reflecting light
- the component may then be a so-called top emitter or a so-called
- Act bottom emitter In particular, it is possible for the component to have translucent and reflective luminous surfaces.
- the light-emitting component comprises
- light-emitting component comprises three or more luminous surfaces, which are arranged side by side laterally. That is, in lateral directions are the luminous surfaces
- the light-emitting device comprises more than one luminous surface. At least one or each of the luminous surfaces can emit light in two opposite spatial directions, so that the totality of all
- Illuminated surfaces of the light-emitting device emitted on both sides.
- the totality of the luminous surfaces is the sum of all adjacently arranged luminous surfaces of the
- the first contact structure laterally surrounds a majority of the entirety of the at least two luminous areas and the second contact structure surrounds a large part of the area
- the two contact structures do not surround the individual luminous surfaces of the light-emitting component individually, but rather the sum of the luminous surfaces, ie their entirety, is laterally surrounded by the contact structures. Forms the whole of the illuminated areas of the
- the first and second contact structures laterally surround this circular or rectangular surface.
- the individual luminous surfaces of the light-emitting component can have any desired shapes.
- each of the at least one luminous area is assigned an active layer stack that is separate from the active layer stacks of another luminous area
- the luminous surfaces extend parallel to the main surfaces of the associated active ones
- Layer stacks themselves are then arranged laterally next to one another and, for example, arranged on a common carrier, which may be formed with a glass plate or a film.
- the individual active layer stacks of the luminous surfaces can be operated separately from each other. This is for example achieved in that at least one of the two electrodes is separated from each other, so that for
- Example the second electrode from each other electrically
- each portion being uniquely associated with an active layer stack.
- the individual active layer stacks of the light-emitting component in this case have a spacing of, for example, at least 5 pm and at most 1 mm, in particular of
- the individual active layer stacks and thus the individual luminous surfaces of the light-emitting component are spaced apart in lateral directions. In this way it is possible that the division of the
- Luminous surface of the light emitting device in several light areas in the off state of the device for the human viewer, for example, is not recognizable.
- the active layer stacks can be the same or
- the light-emitting component can therefore be a segmented, transparent OLED which is translucent at least in places and which
- the first contact structure has at least one first contact, on which the first contact structure
- first feed region from which current is impressed on the first contact structure in the at least one active layer stack, away from the at least one first contact is arranged.
- the feed-in areas are those areas of a
- the first contact structure has a
- Separation structure which extends from one of the at least one first contacts to the first feed region.
- the separation structure may be, for example, a
- Area the first contact structure is completely or partially removed.
- a recess can be made by means of a laser or a lithographic process.
- the metallization that may form the first contact structure is completely removed, thinned or partially severed in the region of the separation structure. Due to the separation structure can be a direct
- Impression of current in the associated electrode of the first contact structure can be reduced or prevented to the feed point.
- the second contact structure has at least one second contact, to which the second contact structure can be contacted, wherein a second feed region, from which current flows via the second contact structure into the second contact structure
- the second contact structure has a
- Separating structure which extends from one of the at least one second contacts to the second feed region.
- the separation structure may be, for example, a
- Recess act in the second contact structure in the region of the second contact structure is completely or partially removed.
- a recess can be made by means of a laser or a lithographic process.
- the separation structure may be elongated
- the separation structure in the vertical direction may extend completely through the material of the second contact structure.
- the metallization that may form the second contact structure is completely removed in the region of the separation structure.
- in the separation structure may be a, in particular elongated, breakthrough in the
- Separation structure can be reduced or prevented direct injection of current in the associated electrode of the second contact structure to the feed point.
- the current injection is therefore not mainly or not only mainly in the area of contact instead, but it is displaced or moved to other locations of the contact structure to a uniform possible current to the contact structure associated electrode and thus the
- a charge carrier path can be within the second Contact structure can be extended by means of the separation structure, and thus a voltage drop along the layer stack, due to a broadening or enlargement of the feed region along the layer stack, homogenized.
- the at least one active layer stack may in particular comprise light-generating layers formed with an organic semiconductor material.
- Semiconductor material increases the conductivity with increasing temperature. This results in an increased luminance at the warmest points of the at least one luminous area. The luminance distribution is therefore especially at
- the light-emitting component described here is based inter alia on the consideration that by laying the feed areas in areas of the
- Injection that is, from the feed regions for which the anode decreases linearly and increases linearly for the cathode when the cathode is at a potential of 0 volts and the anode and cathode are about the same conductivity, is found to be optimal for one Homogenization of the luminance when the first feeder areas and the the second feed-in areas are as far as possible from each other, wherein in more than a first feed region and the first feed regions a maximum distance and at more than a second feed region, the second
- Inlet region, second first feed region and second second feed region along an envelope of the at least one luminous area equidistant from each other
- the light-emitting component has at least two first feed regions, which are arranged such that they have a maximum distance from one another along the first contact structure.
- the light-emitting component has at least two second feed regions, which are arranged such that they have a maximum distance from one another along the second contact structure.
- the first electrode and the second electrode are designed to be flat and translucent, wherein the first electrode and the second electrode are free of busbars. It has been found that the use of contact structures, which the luminous area surrounded to a large extent, and / or the use of
- Feeding areas that are arranged away from contacts of the contact structure, such a good homogenization of the luminance profile allows that, for example, metallic current distribution paths on the electrodes, which can increase, for example, the transverse conductivity of the electrodes can be dispensed with.
- the transparent impression of the illuminated areas is therefore for a here described
- FIGS 1, 2, 3, 4A, 4B, 5A show schematic
- FIG. 5B shows a schematic sectional view of a
- Embodiment of a light emitting device described here Embodiment of a light emitting device described here.
- FIGS. 6A and 6B each show a schematic
- FIG. 1 shows a schematic plan view of a light-emitting component described here.
- the light-emitting component has exactly one luminous surface 3. From the luminous area 3, light 6 is emitted during operation of the light-emitting component. In particular, light 6 is emitted on both sides, out of the plane of the drawing and into the plane of the drawing.
- the light-emitting component is, for example, a light-transmissive light-emitting component
- At least one of the electrodes 10, 20 is reflective at least in places.
- the light emitting device comprises an active
- Layer stack 30 for example, layers
- the active layer stack 30 is for example in the
- the first electrode 10 is a cathode which is formed by a thin, light-permeable metal layer.
- the first electrode 10 may be formed with metals such as silver and / or magnesium.
- the second electrode 20 is, for example, an anode of the light-emitting device formed, for example, with a transparent conductive oxide such as ITO.
- At least one of the electrodes 10, 20 may be reflective at least in places.
- the active layer stack 30 comprises organic layers for the emission of light and for the supply of charge carriers.
- the luminous surface 3 is completely enclosed in the embodiment of Figure 1 by the second contact structure 2 side. Furthermore, the luminous surface 3 is laterally
- the contact structures 1, 2 are with
- the second electrode 20 in this case has a separation 5, for example a cut, which prevents a short circuit between the first electrode 10 and the second electrode 20.
- the first electrode 10 completely overmoulds the light-emitting component on its upper side facing away from the second electrode 20, which is not apparent from the sectional representation of FIG. 5B, so that the first electrode 10 can be contacted via the first contact structure 1.
- the separation 5, for example in the second electrode 20, is generated for example by a laser beam or a lithographic process.
- an insulation 4 for example in the form of an insulating material such as polyimide (PI), is arranged between the second contact structure 2 and the first electrode 10.
- the light-emitting component according to the embodiment of Figure 2 has two second
- the second contact structure 2 has a for
- Separation structure 22 for example in the form of a recess extending from the second contact AI to the second
- Feed region 21 extends on both sides of the luminous surface 3.
- the separation structure 22 is embodied, for example, from a recess in the material of the second contact structure 2.
- the current path 23 is drawn for power from the second contact AI, from which
- first contact structure 1 may have two first feed regions 11, which are generated for example by corresponding separation structures 12 in the first contact structure 1 (not shown in Figure 3).
- the first feed regions 11 and the second feed regions 21 are preferably arranged as far away from each other as possible, so that, for example, the one shown in FIG.
- FIG. 4A shows a further exemplary embodiment which, in contrast to the exemplary embodiment of FIG. 3, has a light-emitting component described here in one embodiment
- the two luminous surfaces each have separately operable active layer stacks 30. They are separated by the segmentation 33.
- the segmentation 33 can be realized, for example, by a separate second electrode 20, which is, for example, split by a laser beam or lithographically, wherein the segmentation 33 extends through the second electrode and the second contact structure 2.
- Electrode 10 may, for example, be designed jointly for all luminous surfaces 31, 32. Separate control of the different luminous surfaces 31, 32 then takes place via the second electrode 20.
- the segmentation 33 also extends through the second contact structure 2, in order to enable the separate actuation of the luminous surfaces 31, 32.
- the light-emitting component comprises for contacting the first contact structure 1, two first contacts Cl, C2 and for contacting the second contact structure 2 two second contacts AI, A2.
- Luminous surfaces, the first electrode 10 and / or the second electrode 20 is severed.
- all light emitting surfaces 31,32 are transparent. Furthermore, it is possible for all luminous surfaces 31, 32 to have a reflective electrode 10, 20, so that light is emitted only in one direction, wherein different luminous areas can also emit light in directions that are different from one another. Furthermore, it is possible that at least one of
- Luminous surfaces is designed to emit radiation on one side and to a reflective electrode has.
- the contacts AI, A2 of the second contact structure 2 is not guided to the edge of the device, but are located directly on the second
- the first contact structure 1 enclose and the second contact structure 2, the segmented luminous surface 3, which has a first luminous surface 31 and a second luminous surface 32, not complete, but they are only on the longer side surfaces of
- first contact structure 1 and the second contact structure surround the luminous surface 3 for the most part, namely more than 50% of their length laterally.
- FIG. 5B shows a schematic sectional view of the right side of that shown in FIG. 5A
- FIGS. 6A and 6B each show a schematic
- Sectional view of the right side of the light-emitting component shown in FIG. 5A In this case, alternative and / or supplementary possibilities of lateral contacting of the light-emitting component are illustrated in comparison to FIG. 5B.
- the light emitting device of Fig. 6A has a similar or same construction as the light emitting device of Fig. 5B.
- the first contact structure 1, the second contact structure 2, the insulation 4, the active layer stack 30, and the first electrode 10 are applied. At one of the active
- Layer stack 30 side facing away from the second electrode 20 may also be a substrate, such as a glass plate or a film may be attached (not shown in the figures).
- the first contact structure 1 and the second contact structure 2 can be formed with the same material.
- Contact structure 1 and second contact structure 2 may be spatially separated in lateral directions.
- the second electrode 20 and the second contact structure 2 have the separation 5, which in the vertical
- the left side and the right side hereinafter also inner and outer side, the second electrode 20 and / or the second contact structure. 2
- the active layer stack 30 and the first electrode 10 are formed integrally.
- the active layer stack 30 extends from the first luminous surface 31 in lateral directions on the insulation 4. Along the vertical direction extending side surfaces of the second contact structure 2 and the insulation 4 can then
- the first electrode 10 extends from the first luminous surface 31 over the active one
- Layer stack 30 the separation 5 up to the first contact structure 1.
- the first electrode 10 may be in direct contact with the first contact structure 1.
- the first contact structure 1 can be freely accessible and can be electrically contacted from the outside.
- the second electrode 20 has several
- the separations 5 extend through the second contact structure 2 and the first contact structure 1.
- the insulation 4 may at its the second electrode 20th
- Width of the separation 5 can be at least 55 pm and at most 65 pm, in particular 60 pm.
- Contact structure 2 adjacent to the organic layer stack 30 may, for example, have a width of at least 350 pm and at most 450 pm, in particular 400 pm.
- the insulation 4 may have a width of at least 1.1 mm and at most 1.5 mm, in particular 1.3 mm.
- transparent, organic light emitting diode which is characterized by a particularly homogeneous luminance profile at its luminous surfaces 31, 32, 3.
- the potential difference between the highest voltage applied to the at least one active layer stack 30 and the lowest voltage applied to the at least one active layer stack 30 can be reduced below 1 volt, in particular below 0.1 volt.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112015005367.0T DE112015005367B4 (de) | 2014-11-28 | 2015-11-24 | Lichtemittierendes Bauelement |
US15/517,147 US9997731B2 (en) | 2014-11-28 | 2015-11-24 | Light-emitting component |
KR1020177014047A KR102385615B1 (ko) | 2014-11-28 | 2015-11-24 | 발광 구성요소 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014117499.2 | 2014-11-28 | ||
DE102014117499.2A DE102014117499A1 (de) | 2014-11-28 | 2014-11-28 | Lichtemittierendes Bauelement |
Publications (1)
Publication Number | Publication Date |
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WO2016083400A1 true WO2016083400A1 (de) | 2016-06-02 |
Family
ID=54697586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2015/077544 WO2016083400A1 (de) | 2014-11-28 | 2015-11-24 | Lichtemittierendes bauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US9997731B2 (de) |
KR (1) | KR102385615B1 (de) |
DE (2) | DE102014117499A1 (de) |
WO (1) | WO2016083400A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015100099B4 (de) * | 2015-01-07 | 2017-10-19 | Osram Oled Gmbh | Verfahren zum Herstellen eines organischen lichtemittierenden Bauelements |
CN106206669B (zh) * | 2016-08-31 | 2018-12-07 | 昆山维信诺科技有限公司 | 用于异形oled产品的布线方法以及异形oled产品 |
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WO2007036850A2 (en) * | 2005-09-28 | 2007-04-05 | Koninklijke Philips Electronics N.V. | A large area organic diode device and a method of manufacturing it |
WO2009007899A1 (en) * | 2007-07-11 | 2009-01-15 | Koninklijke Philips Electronics N.V. | Organic functional device and manufacturing method therefore |
DE102010003121A1 (de) * | 2010-03-22 | 2011-09-22 | Osram Opto Semiconductors Gmbh | Organische Lichtemittierende Vorrichtung mit homogener Leuchtdichteverteilung |
EP2627156A1 (de) * | 2010-12-28 | 2013-08-14 | Nec Lighting, Ltd. | Organische elektrolumineszenz-beleuchtungsvorrichtung und verfahren zur herstellung dieser beleuchtungsvorrichtung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090179211A1 (en) * | 2005-07-14 | 2009-07-16 | Tae-Kyung Yoo | Light emitting device |
DE102008013031B4 (de) | 2008-03-07 | 2019-07-25 | Osram Oled Gmbh | Optoelektronisches Bauelement |
KR20120024725A (ko) * | 2009-05-08 | 2012-03-14 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 조명 유닛 |
-
2014
- 2014-11-28 DE DE102014117499.2A patent/DE102014117499A1/de not_active Withdrawn
-
2015
- 2015-11-24 US US15/517,147 patent/US9997731B2/en active Active
- 2015-11-24 KR KR1020177014047A patent/KR102385615B1/ko active IP Right Grant
- 2015-11-24 DE DE112015005367.0T patent/DE112015005367B4/de active Active
- 2015-11-24 WO PCT/EP2015/077544 patent/WO2016083400A1/de active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2007036850A2 (en) * | 2005-09-28 | 2007-04-05 | Koninklijke Philips Electronics N.V. | A large area organic diode device and a method of manufacturing it |
WO2009007899A1 (en) * | 2007-07-11 | 2009-01-15 | Koninklijke Philips Electronics N.V. | Organic functional device and manufacturing method therefore |
DE102010003121A1 (de) * | 2010-03-22 | 2011-09-22 | Osram Opto Semiconductors Gmbh | Organische Lichtemittierende Vorrichtung mit homogener Leuchtdichteverteilung |
EP2627156A1 (de) * | 2010-12-28 | 2013-08-14 | Nec Lighting, Ltd. | Organische elektrolumineszenz-beleuchtungsvorrichtung und verfahren zur herstellung dieser beleuchtungsvorrichtung |
Also Published As
Publication number | Publication date |
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DE112015005367A5 (de) | 2017-08-10 |
DE112015005367B4 (de) | 2021-09-16 |
US20170309851A1 (en) | 2017-10-26 |
US9997731B2 (en) | 2018-06-12 |
KR102385615B1 (ko) | 2022-04-12 |
DE102014117499A1 (de) | 2016-06-02 |
KR20170091603A (ko) | 2017-08-09 |
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