WO2016076015A1 - Module à semi-conducteur de puissance - Google Patents

Module à semi-conducteur de puissance Download PDF

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Publication number
WO2016076015A1
WO2016076015A1 PCT/JP2015/076834 JP2015076834W WO2016076015A1 WO 2016076015 A1 WO2016076015 A1 WO 2016076015A1 JP 2015076834 W JP2015076834 W JP 2015076834W WO 2016076015 A1 WO2016076015 A1 WO 2016076015A1
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Prior art keywords
power semiconductor
heat transfer
transfer sheet
semiconductor module
circuit
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PCT/JP2015/076834
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English (en)
Japanese (ja)
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英一 井出
順平 楠川
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株式会社日立製作所
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Publication of WO2016076015A1 publication Critical patent/WO2016076015A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a power semiconductor module.
  • the power semiconductor chip has a high calorific value due to energization and needs to be cooled, and is used in the form of a power semiconductor module in which a conductive material, a heat radiating material and these insulating materials are mounted.
  • the power semiconductor module requires insulation reliability, and a resin capable of reducing the thermal stress of the chip from a conventional silicone gel is used. In power semiconductor modules, high reliability is required for insulation.
  • Patent Document 1 As a prior art related to the present invention, for example, there is a structure of a power semiconductor module as described in Patent Document 1 and Patent Document 2.
  • Patent Document 1 in order to relax the electric field at the end of the circuit layer that becomes the electric field concentration portion and improve the insulation, the circuit layer and the insulating layer end between the circuit layer and the metal layer sandwiching the ceramic insulating layer A structure has been proposed in which the distance between is smaller than the distance between the metal layer end and the insulating layer end.
  • Patent Document 2 in order to reduce the size of the power semiconductor module, the relative permittivity of the resin that seals the metal layer and the insulating layer side is made lower than that of the resin that seals the circuit layer and the insulating layer side.
  • a structure having a small gap between the layer end and the insulating layer end and a method for manufacturing the module have been proposed.
  • thermal stress is generated during use.
  • cracks occur at the end of the metal layer where stress is concentrated, and the generated cracks may propagate to the sealing resin on the base plate and cause deterioration of insulation.
  • a power semiconductor chip is mounted on a ceramic substrate in order to make the relative dielectric constant of the resin sealing the metal layer and the insulating layer side smaller than the resin sealing the circuit layer and the insulating layer side.
  • a low dielectric constant resin is supplied.
  • the power semiconductor chip is mounted using a solder material, processing at a high temperature is required. Therefore, the low dielectric constant resin used is limited to a resin having a high heat resistance temperature.
  • the present invention has been made in view of the above problems, and an object of the present invention is to improve the insulation and heat dissipation of a resin-encapsulated power semiconductor module capable of increasing the breakdown voltage.
  • a power semiconductor module includes a circuit on which a semiconductor element is mounted, an insulating layer disposed on at least one surface of the circuit, and a surface on which the circuit of the insulating layer is disposed.
  • a resin seal comprising a metal heat dissipation layer disposed on the opposite surface, and a first insulating material for sealing the circuit, the insulating layer, and the metal heat dissipation layer so that the surface of the metal heat dissipation layer is exposed.
  • a power semiconductor module including a stationary body, wherein the resin sealing body includes a heat transfer sheet disposed on the surface of the metal heat dissipation layer, and the first insulating material and the heat transfer sheet so that the surface of the heat transfer sheet is exposed.
  • a metal heat dissipation layer is projected along the stacking direction of the metal heat dissipation layer and the circuit so that the projected portion of the metal heat dissipation layer is included in the projected portion of the circuit.
  • the heat transfer sheet is composed of a heat transfer sheet and an insulating layer. When projected along the layer direction, characterized in that the projection portion of the heat transfer sheet is provided to be included projection portion of the insulating layer.
  • the present invention it is possible to improve the insulation and heat dissipation of the resin-encapsulated power semiconductor module capable of increasing the breakdown voltage.
  • FIG. 1 is an external perspective view of a power semiconductor module according to a first embodiment. It is a circuit diagram of the resin sealing body 901 shown by FIG. FIG. 2 is a perspective view of a resin sealing body 901 and a cooler 803 obtained by removing a first insulating material 601 and a second insulating material 602 from the resin sealing body 901 in FIG. 1. It is a cross-sectional schematic diagram of AA 'of the resin sealing body 901 of FIG. It is a cross-sectional schematic diagram of the resin sealing body 900 which concerns on a comparative example. It is a figure which shows the electric field analysis result of the circuit edge part of the resin sealing body 900 which concerns on a comparative example.
  • FIG. 12 is a diagram showing a manufacturing process subsequent to FIG. 11. It is an external appearance perspective view after a transfer mold process. It is a figure which shows the resin sealing body after a transfer mold process. It is a figure which shows the next manufacturing process of FIG. It is a figure which shows the modification of 1st Embodiment. It is an external appearance perspective view of the resin sealing body 902 and the water channel 804 which concern on 2nd Embodiment.
  • FIG. 1 is a perspective view of a power semiconductor module according to this embodiment.
  • the power semiconductor module according to this embodiment includes a resin sealing body 901 and a cooler 803.
  • FIG. 2 is a circuit configuration diagram of the resin sealing body 901 shown in FIG.
  • the resin sealing body 901 has a 1 in 1 circuit shown in FIG. A gate terminal 21 and a sense emitter terminal 25 as control terminals, and an emitter terminal 22 and a collector terminal 23 as power terminals are drawn out. Further, a heat radiating surface 43 (not shown) located on the back surface is a heat radiating surface of the resin sealing body 901.
  • the first insulating material 601 is filled in a region excluding the terminals 21, 22, 23, 25 and the heat radiating surface 43.
  • the resin sealing body 901 is attached to the cooler 803 in a pressed state via a heat transfer sheet 703 (not shown) and a second insulating member 602 (not shown).
  • FIG. 3 is a perspective view of a region where the first insulating material 601 and the second insulating material 602 are removed from the resin sealing body of FIG.
  • the resin sealing body 901 is disposed on a surface opposite to the surface on which the semiconductor element is mounted, the insulating layer disposed on at least one surface of the circuit, and the surface of the insulating layer.
  • the ceramic insulating layer 303 is used as the insulating layer, and the IGBT 101 and the diode 110 are used as the semiconductor elements.
  • the IGBT 101 and the diode 110 are mounted on a circuit pattern 203 provided above the ceramic insulating layer 303.
  • IGBT is an abbreviation for an insulated gate bipolar transistor.
  • a metal heat dissipation layer 403 is provided below the ceramic insulating layer 303.
  • the metal heat dissipation layer 403 has a heat dissipation surface 43 exposed from the first insulating material 601, and the heat dissipation surface 43 is attached to the cooler 803 in a pressed state via a heat transfer sheet 703.
  • the heat transfer sheet is a sheet made of a heat transfer material such as a carbon sheet. The heat transfer sheet is disposed in contact with the heat radiating surface 43 of the metal heat radiating layer.
  • the width and depth of the metal heat radiation layer 403 and the heat transfer sheet 703 are smaller than the width and depth of the collector circuit 203.
  • the width is the length in the longitudinal direction
  • the depth is the length in the short direction.
  • FIG. 4 is a cross-sectional view of the dotted line AA ′ portion of FIG.
  • the collector electrode of the IGBT 101 and the cathode electrode of the diode 110 are electrically joined to the collector circuit 203 provided on the ceramic insulating layer through the metal joint portion 503.
  • the ceramic substrate 13 includes a metal heat dissipation layer 403, a ceramic insulating layer 303, and a collector circuit 203.
  • the heat generated in the IGBT 101 and the diode 110 is transmitted to the cooler 803 through the metal junction 503, the collector circuit 203, the ceramic insulating layer 303, the metal heat dissipation layer 403, and the heat transfer sheet 703, and is cooled.
  • the metal heat dissipation layer 403 is provided so that the projected portion of the metal heat dissipation layer is included in the projected portion of the circuit when projected along the stacking direction of the metal heat dissipation layer 403 and the collector circuit 203.
  • the heat transfer sheet 703 is provided so that the projected portion of the heat transfer sheet is included in the projected portion of the insulating layer when projected along the stacking direction of the heat transfer sheet and the insulating layer. That is, the widths of the metal heat radiation layer 403 and the heat transfer sheet 703 are made smaller than the width of the collector circuit 203.
  • FIG. 5A shows a schematic cross-sectional view of a resin encapsulant 900 of a power semiconductor module according to a comparative example of the present invention.
  • the heat transfer sheet 703 of the resin sealing body 900 is provided so that the projected portion of the heat transfer sheet is included in the projected portion of the circuit when projected along the stacking direction of the heat transfer sheet 703 and the collector circuit 203. Absent. That is, the difference from the resin sealing body 901 shown in FIG. 4 is that the width of the heat transfer sheet 703 is larger than the width of the collector circuit 203.
  • FIG. 5B shows the electric field analysis result at the end of the collector circuit 203 serving as the electric field concentration portion.
  • the relative dielectric constant of the first insulating material 601 was calculated as 4.5
  • the relative dielectric constant of the ceramic insulating layer 303 was calculated as 9.0.
  • FIG. 6 shows the electric field analysis result at the end of the collector circuit 203 which becomes the electric field concentration portion of the resin sealing body 901 of the present embodiment shown in FIG.
  • the relative dielectric constant of the second insulating material 602 was calculated at 4.5, which is the same as the relative dielectric constant of the first insulating material 601.
  • the electric field strength of the resin sealing body 900 is 100%
  • the electric field strength of the resin sealing body 901 is reduced by about 20% to 81%. This decrease in electric field strength is due to the fact that the heat transfer sheet having high conductivity takes a certain distance from the end of the collector circuit, and is due to the expansion of the insulation distance. Due to the decrease in the electric field strength, the module breakdown voltage and the corona discharge resistance can be improved.
  • FIG. 7 shows that the width of the heat transfer sheet 703 is reduced to the same as that of the ceramic insulating layer 303, and a second insulating material having a relative dielectric constant of 4.5 is provided in the space between the cooler and the resin sealing body generated thereby. It is a calculation result when installed.
  • FIG. 8 shows a case where the width of the heat transfer sheet 703 is reduced to the same level as the collector circuit 203 and a second insulating material having a relative dielectric constant of 4.5 is installed in the space between the generated cooler and the resin sealing body. Is the calculation result of Compared with the resin sealing body shown in FIG. 5, the electric field strengths of the resin sealing bodies shown in FIGS.
  • the ceramic insulating layer 303 is made of aluminum nitride, silicon nitride, alumina or the like having a high withstand voltage. In particular, aluminum nitride or silicon nitride having high thermal conductivity is desirable.
  • the thickness of the ceramic insulating layer 303 is set in the range of 0.1 to 1.5 mm in accordance with the insulating characteristics required for the power semiconductor module.
  • the ceramic insulating layer may have a sheet-like configuration in which a resin is matrixed and a high thermal conductive filler such as alumina, boron nitride, yttria (yttrium oxide), or aluminum nitride is mixed.
  • the collector circuit 203 is made of copper, aluminum, or an alloy thereof having low electrical resistance. Between the collector circuit 203 and the ceramic insulating layer, an intermediate layer made of molybdenum, tungsten or carbon having a low thermal expansion and high thermal conductivity, or a composite material of these materials and copper or aluminum may be provided. In this embodiment, the intermediate layer is omitted.
  • the thickness of the collector circuit 203 is set in the range of 0.2 to 2.0 mm according to the required current capacity.
  • the metal heat dissipation layer 403 is made of copper, aluminum, or an alloy thereof having high thermal conductivity. Similarly to the circuit side, an intermediate layer made of molybdenum, tungsten, or carbon with a low thermal expansion and high thermal conductivity between the metal heat dissipation layer and the ceramic insulating layer, or a composite material of these materials and copper or aluminum may be installed. Good. In this embodiment, the intermediate layer is omitted.
  • an adhesive novolak, polyfunctional, biphenyl, phenol type epoxy resin, bismaleimide triazine, or cyanate ester can be used as the first insulating material 601.
  • These resins contain fillers such as ceramics such as SiO 2, Al 2 O 3, AlN, and BN, and rubber, and have a thermal expansion coefficient of 3 to 23 ppm / K, which is close to that of the IGBT and circuit 203, and the thermal expansion coefficient. To reduce the difference.
  • the Young's modulus is set in the range of 1 to several tens of GPa.
  • a low-temperature sintered bonding material mainly composed of solder material, fine metal particles, and metal oxide particles is used for the metal bonding portion 503.
  • solder material solder whose main component is tin, bismuth, zinc, gold or the like whose melting point is higher than the curing temperature of the first insulating material 601 can be used.
  • the fine metal particles are fine particles of silver or copper coated with an aggregation protective material, and in particular, the aggregation protective material that can be removed at a low temperature equivalent to the solder material is applicable.
  • the metal oxide particles a metal oxide that can be reduced at a low temperature equivalent to a solder material such as silver oxide or copper oxide is applicable. When fine silver particles, fine copper particles, silver oxide, and copper oxide particles are used, the metal joint becomes a sintered silver layer or a sintered copper layer.
  • the heat transfer sheet 703 a sheet-like material having high thermal conductivity is used.
  • a material having a Young's modulus lower than that of the metal heat dissipation layer 403 and the first insulating material 601 is used.
  • the thermal stress can be reduced, which is effective for improving the reliability of the resin sealing body.
  • the heat transfer sheet 703 preferably has a Young's modulus of 1 to 500 MPa.
  • the Young's modulus is preferably larger than 1 MPa.
  • a highly heat conductive conductive metal or carbon-based sheet is more desirable.
  • a structure having improved flexibility can be obtained by adding a carbon filler to an acrylic, silicone, or urethane-based resin.
  • a heat transfer sheet instead of a solder material between the metal heat dissipation layer and the cooler, the assembling property of the resin encapsulant is improved and the manufacture becomes simple.
  • an insulating resin can be used as the second insulating material 602.
  • the second insulating material 602 By installing the second insulating material 602, it is possible to improve the insulating property as compared with the case where the second insulating material is not installed.
  • stress generated in the second insulating material 602 can be reduced.
  • in order to make a 2nd insulating material into a sheet form it is possible to perform a hardening process in advance.
  • the reliability of the heat transfer sheet can be improved by using a low hardness material for the second insulating material. It is preferable that the hardness of the second insulating material is first insulating material> heat transfer sheet> second insulating material.
  • the resin sealing body radiates heat through the heat transfer sheet 703 when the second insulating material 602 and the heat transfer sheet 703 are pressed.
  • the second insulating material 602 is preferably a material having a Young's modulus smaller than that of the first insulating material 601 and the heat transfer sheet 703 so that the heat transfer sheet 703 can be pressed under the usage environment.
  • Such materials include thermoplastic elastomers, silicone gels, etc., in addition to acrylic, silicone, and urethane resins.
  • the Young's modulus is preferably less than 1 MPa.
  • the projection portion of the metal heat dissipation layer is provided so as to be included in the projection portion of the circuit
  • the heat transfer sheet is When projected along the stacking direction of the heat transfer sheet and the insulating layer, the projected portion of the heat transfer sheet is provided so as to be included in the projected portion of the insulating layer.
  • the power semiconductor module in order to maintain the reliability of the insulating portion under the usage environment, includes a resin sealing body having the following configuration.
  • the surface of the metal heat dissipation layer 403 is exposed, and the first insulating material 601 is present on the same plane.
  • the first insulating material 601 is bonded to the side surface of the metal heat dissipation layer 403.
  • the heat transfer sheet 703 is disposed so as to be in contact with the exposed surface of the metal heat dissipation layer 403.
  • the heat transfer sheet 703 is an installation structure in which both the metal heat radiation layer 403 and the cooler 803 are in close contact with each other without being chemically or metallicly bonded.
  • the resin sealing body 901 is not directly bonded or bonded to the cooler 803 via the metal heat dissipation layer 403 or the first insulating material 601, it is generated in the heat transfer sheet portion or the sealing resin portion. The thermal stress to be reduced can be greatly reduced.
  • the second insulating material 602 on the outer periphery of the heat transfer sheet 703, it is possible to improve insulation and suppress the protrusion of the heat transfer sheet to the outer periphery.
  • thermal stress can be reduced.
  • the insulating material covering the end portion of the ceramic insulating layer 303 where the stress is concentrated is sealed using one kind of material. As a result, it is possible to separate the advancing portion when the generation of the interfacial stress or the crack, which becomes a problem when sealing with two or more kinds of materials, from the interface with the ceramic insulating layer 303, and the insulation is improved.
  • FIG. 9A is a cross-sectional view of AA ′ in FIG. 3 as viewed from the direction of the arrow.
  • the resin encapsulant included in the power semiconductor module according to Modification 2 is configured such that when the metal heat dissipation layer is projected along the stacking direction of the heat transfer sheet and the metal heat dissipation layer, the projected portion of the metal heat dissipation layer is It is provided so as to be included in the projection part.
  • the heat transfer sheet is provided so that the projected portion of the heat transfer sheet is included in the projected portion of the collector circuit when projected along the stacking direction of the heat transfer sheet and the circuit. That is, the heat transfer sheet layer 703 is different from the resin sealing body of FIG.
  • FIG. 9B shows the result of electric field analysis.
  • the electric field strength was 83%, and compared with FIG. 5 (b), the electric field strength could be reduced by 17%. From this result, even if the width of the heat transfer sheet is larger than the width of the metal heat dissipation layer, if the width of the heat transfer sheet is smaller than the width of the circuit layer, there is an effect of improving the insulation performance to the same extent as the first embodiment I understand.
  • the resin encapsulant included in the power semiconductor module according to Modification 2 is different from the first embodiment in that the second insulating material 602 has a lower relative dielectric constant than the first insulating material 601.
  • FIG. 10 shows the electric field analysis results.
  • the relative dielectric constant of the second insulating material is 3.5
  • the relative dielectric constant of the first insulating material 601 is 4.5.
  • the electric field strength can be reduced to 75% by using the second insulating material having a relative dielectric constant lower than that of the first insulating material. Compared with the first embodiment, the insulation performance can be improved.
  • FIG. 11 shows a process of mounting the IGBT 101 and the diode 110 on the collector circuit 203 of the ceramic substrate 13.
  • the collector electrode of IGBT 101 and the cathode electrode of diode 110 are electrically joined to collector circuit 203 via metal junction 503.
  • the metal junction and the circuit layer are joined by heating to 250 to 350 ° C. in hydrogen or an inert atmosphere.
  • the ceramic insulating layer has a sheet-like configuration in which a resin is matrixed and a high thermal conductive filler such as alumina, boron nitride, yttria, or aluminum nitride is mixed, the metallized layer is bonded after the metal bonding portion 503 is bonded from the viewpoint of heat resistance.
  • the process of attaching with 403 is desirable.
  • the circuit 203 and the metal heat dissipation layer 403 are bonded to the ceramic insulating layer 303 using, for example, a brazing material that can be firmly bonded.
  • the melting point of the brazing material is preferably higher than the temperature at which the IGBT 101 and the diode 110 are joined to the collector circuit 203.
  • the width of the circuit is wider than the width of the metal heat dissipation layer, it is preferable to make the circuit slightly thicker when materials having the same composition are used.
  • FIG. 12 shows a process of mounting a control terminal gate terminal 21 and a sense emitter terminal 25, and a power terminal emitter terminal 22 and a collector terminal 23.
  • the control terminal gate terminal 21 and the sense emitter terminal 25, and the power terminal emitter terminal 22 and the collector terminal 23 are integrated in a strip shape.
  • the gate electrode of the IGBT 101 is ultrasonically bonded to the gate terminal 21 using a wire or ribbon made of Al or Cu having a low electrical resistance (not shown).
  • the emitter electrode of the IGBT 101 and the anode electrode of the diode 110 are ultrasonically bonded to the emitter terminal 22 using an Al or Cu wire or ribbon having a low electrical resistance (not shown).
  • the collector circuit 203 is ultrasonically bonded to the collector terminal 23 using a wire or ribbon made of Al or Cu having a low electrical resistance (not shown).
  • the sense emitter terminal 25 is ultrasonically bonded by using a sense emitter electrode when the IGBT 101 has a sense emitter electrode, or by using an Al or Cu wire or ribbon having a low electric resistance with respect to the emitter electrode if not present (not shown).
  • an Al or Cu lead material may be prepared and bonded using the metal bonding portion 503. In that case, the steps shown in FIG. 7 can be performed simultaneously.
  • FIG. 13A shows an external perspective view after the transfer molding process.
  • the above-described band-shaped integrated portion 20 is cut after sealing, and insulation between terminals is ensured, whereby a resin sealing body 901 shown in FIG. 13B is completed.
  • the sealing and curing temperature of the first insulating material 601 is preferably in the range of 150 to 200 ° C.
  • the circuit, the terminal, the ceramic insulating layer, the metal heat dissipation layer, the semiconductor chip, and the metal joint are subjected to a treatment for improving the adhesion strength with the first insulating material 601. It is desirable. For example, a method of forming a coating film such as polyamideimide or polyimide or a method of roughening the surface is employed.
  • FIG. 14 shows a process of attaching the resin sealing body 901 to the water channel 803.
  • the second insulating material 602 has a frame shape.
  • the outer shape can be easily aligned with the outer shape of the first insulating material 601.
  • the outer shape is matched with that of the first insulating material 601, but it is also possible to match with the water channel.
  • the inner diameter of the frame-like shape of the second insulating material can be easily aligned in accordance with the outer shape of the heat transfer sheet 703.
  • Productivity can be improved because alignment is facilitated. It installs in a waterway in this state, and is set as the state pressed with the volt
  • the order of heat resistance required under the usage environment of the resin sealing body 901 is the order of the metal joint portion 503, the first insulating material 601, the heat transfer sheet 703, and the second insulating material 602.
  • the order of the manufacturing process is the order of the heat-resistant temperature required in the use environment as in this embodiment. It is possible to reduce the thermal stress generated during the process. Thereby, the crack, peeling, etc. which generate
  • the gate terminal 21, the emitter terminal 22, the collector terminal 23, and the sense emitter terminal 25 are drawn from the same plane.
  • the position between terminals can be positioned with high precision.
  • the displacement occurs, excessive stress occurs during resin leakage or mold clamping.
  • one surface of the metal heat dissipation layer 403, which is a heat dissipation surface, is exposed, and these members are not exposed to brittle members such as the IGBT 101, the diode 110, and the ceramic 303. Can be sealed with resin 601.
  • the heat radiation surface can be installed in parallel to the first insulating material 601, and the clearance with the water channel 803 can be set in parallel.
  • the first insulating material 601 can be present on the same plane of the exposed metal heat dissipation layer 403. Thereby, the uniformity at the time of a press can be provided.
  • the first insulating material 601 covers brittle members such as the IGBT 101, the diode 110, and the ceramic 303, it is possible to prevent direct stress and to perform additional processing such as grinding or machining. Become.
  • FIG. 15 shows a process of attaching the resin sealing body 901 to the water channel 803.
  • the heat transfer sheet 703 is installed in a state where it is temporarily attached to the heat radiation surface 43 of the resin sealing body 901 and pressed with a bolt or a spring.
  • a frame-shaped third insulating member 603 is attached to the water channel side.
  • the second insulating material 602 is injected into the remaining space on the outer periphery of the heat transfer sheet 703. Thereafter, heat treatment is performed to cure the insulating material.
  • a thermoplastic insulating material such as PPS or PBT is used for the frame-shaped third insulating member 603, for example, a thermoplastic insulating material such as PPS or PBT is used.
  • the water channel and the resin sealing body are positioned by providing the frame-shaped wall surface 603 formed of an insulating material with recesses and through holes for installing the terminals 21, 22, 23, and 25 of the resin sealing body. Is possible. It is also possible to use a frame-shaped third insulating member 603 as a supporting part for the pressure component.
  • FIG. 16 is a perspective view of an example of a power semiconductor module according to the present invention.
  • the plurality of resin sealing bodies 902 are sandwiched between the plurality of water channels 804 via the heat transfer sheet 703 (not shown).
  • the resin sealing body 902 shown in FIG. 17 has the 1 in 1 circuit shown in FIG. 2 as in the first embodiment.
  • a heat radiation surface 42 located on the front surface and a heat radiation surface 43 (not shown) located on the back surface are heat radiation surfaces of the resin sealing body 902, respectively.
  • the control terminal gate terminal 21 and the sense emitter terminal 25, and the power terminal emitter terminal 22 and the collector terminal 23 are drawn out in the same direction.
  • the first insulating material 601 is filled in a region excluding the terminals 21, 22, 23, 25 and the heat radiation surfaces 42, 43.
  • FIG. 18 shows a perspective view of a region where the first insulating material 601 is removed from FIG.
  • two IGBTs 101 and two diodes 110 are provided as power semiconductor devices to be mounted.
  • the two IGBTs 101 and the two diodes 110 are in the form of being sandwiched between a ceramic substrate 12 on the emitter electrode side and a ceramic substrate 13 on the collector electrode side having circuit patterns and metal heat dissipation layers on the front and back sides (helping understanding). For illustration).
  • FIG. 19 is a cross-sectional view taken along the dotted line AA ′ in FIG.
  • the collector electrode of the IGBT 101 is electrically bonded to the collector circuit 203 provided on the insulating substrate 13 having the metal heat dissipation layer 403 and the ceramic insulating layer 303 via the metal bonding portion 503.
  • the emitter electrode 102 of the IGBT 101 is electrically bonded to the emitter circuit 202 provided on the insulating substrate 12 having the metal heat dissipation layer 402 and the ceramic insulating layer 302 via the metal bonding portion 502 and the protruding portion 202A.
  • heat radiation surfaces 42 and 43 are formed on the surface of the ceramic substrates 12 and 13 opposite to the IGBT mounting surface.
  • the heat generated in the active portion of the IGBT 101 has two paths: a path for transferring heat through the insulating substrate 13 and a path for transferring heat through the insulating substrate 12 from the protrusion 202A in the vertical direction.
  • a power semiconductor module including a resin sealing body having front and back directions and two heat radiation paths is defined as a double-sided cooling type power semiconductor module.
  • the protrusion 202A provided in the emitter circuit 202 has a function of controlling the insulation distance between the emitter circuit 202 and the collector circuit 203 determined from the insulation characteristics of the first insulating material 601.
  • the protrusion 202A has a shape in which the width and depth of the installation surface are larger than the thickness so that the protrusion 202A can be independent during the joining process.
  • the thickness of the protruding portion 202A is made larger than that of the metal joint portion 502, so that the inclination and thickness variation during joining are reduced.
  • the width and depth of the installation surface of the protrusion 202A to the emitter electrode 102 are made smaller than those of the emitter electrode 102.
  • the protrusion 202A has low electrical resistance and low thermal resistance. Moreover, you may install them and you may install the low thermal expansion intermediate
  • the ceramic insulating layers 302 and 303 are made of aluminum nitride, silicon nitride, alumina or the like having a high withstand voltage.
  • the deformation due to the thermal stress of the resin sealing body can be reduced by making the thicknesses of the ceramic insulating layers on the front and back sides equal.
  • the same material as in the first embodiment can be used. Moreover, you may install an intermediate
  • the same material as that of the first embodiment can be used for the metal heat radiation layers 402 and 403. Further, an intermediate layer may be provided between the metal heat dissipation layer and the ceramic insulating layer as in the first embodiment.
  • the circuit portions 202 and 203 and the metal heat radiation layers 402 and 403 are bonded using, for example, a brazing material that can be firmly bonded to the ceramics 302 and 303. At this time, it is desirable to make the thermal stress obtained from the difference between the thermal expansion coefficient and the Young's modulus between the circuit and the metal heat dissipation layer equal across the ceramic insulating layer.
  • the same material as that in the first embodiment can be used for the first insulating material 601.
  • the first insulating material 601 and the adhesion strength with respect to the circuit, terminal, ceramic insulating layer, metal heat dissipation layer, semiconductor chip, and metal joint portion are sealed.
  • a method of forming a coating film such as polyamideimide or polyimide is employed.
  • the same material as that of the first embodiment can be used for the metal joint portions 502 and 503, the heat transfer sheets 702 and 703, and the second insulating material that join the emitter electrode 102 and the collector electrode 103.
  • the projected portion of the metal heat dissipation layer is the projected portion of the collector circuit and the heat transfer.
  • the projection part of the sheet is included in the projection part of the sheet, and the projection part of the heat transfer sheet is included in the projection part of the collector circuit. Therefore, the width of the collector circuit 203 is larger than the width of the metal heat dissipation layer 403.
  • the width of the heat transfer sheet 703 is smaller than the width of the collector circuit 203 and larger than the width of the metal heat dissipation layer 403.
  • the projection part of the metal heat dissipation layer is included in the projection part of the emitter circuit and the projection part of the heat transfer sheet.
  • the projected part of the sheet is included in the projected part of the emitter circuit. Therefore, the width of the emitter circuit 202 is larger than the width of the metal heat dissipation layer 402.
  • the heat transfer sheet 702 is smaller than the width of the emitter circuit 202 and larger than the width of the metal heat dissipation layer 402.
  • the width of the heat transfer sheets 702 and 703 smaller than the width of the ceramic insulating layers 302 and 303, the electric fields at the ends of the emitter circuit 202 and the collector circuit 203 serving as electric field concentrating portions are relaxed, and resin sealing is performed.
  • the insulation performance of the body 902 can be improved. As a result, the insulation reliability of the power semiconductor module can be improved.
  • FIG. 20 is a perspective view of the second embodiment.
  • a power semiconductor module according to Modification 1 of the second embodiment includes a partition member (metal case) 611 having an opening on one side and a recess on the other side, and a resin seal housed in the opening on the one side And a cooler 804 housed in the recess on the other side, and the resin-sealed body is housed so as to be sandwiched by the cooler via a partition member (metal case).
  • Fig. 21 is an assembly diagram to help understanding.
  • a plurality of resin sealing bodies 902 are inserted into openings provided on the upper surface of the metal case 611, and a plurality of water channels 804 are alternately inserted into recesses provided on the lower surface.
  • FIG. 22 is a schematic cross-sectional view of the insertion portion AA ′ of the power semiconductor module of FIG. 20, which is rotated 90 ° counterclockwise.
  • a metal case 611 exists between the resin sealing body 902 and the water channel 804, and heat transfer sheets 702 and 703 are respectively provided at the interfaces between the heat radiation surfaces 42 and 43 of the resin sealing body 902 and the metal case 611. Yes.
  • This structure allows the second insulating material 602 to be filled without leaking from the opening of the metal case 611 after the resin sealing body 902 is installed in the water channel 804 in a pressed state.
  • a difference is that a case 611 for installing the insulating material 602 in the heat transfer path is provided.
  • the metal case 611 is preferably made of Cu, Al, or an alloy thereof having high thermal conductivity. Further, the metal case 611 is preferably thin, and is preferably less than 1 mm.
  • FIG. 23 is a schematic cross-sectional view of the insertion portion AA ′ of the power semiconductor module of FIG. 20, which is rotated 90 ° counterclockwise.
  • a metal case 611 exists between the resin sealing body 902 and the water channel 804.
  • the metal case 611 has a structure having an opening only in one direction on the terminal side of the resin sealing body 902.
  • Heat transfer sheets 702 and 703 are provided on the interfaces between the heat radiation surfaces 42 and 43 of the resin sealing body 902 and the metal case 611, respectively.
  • heat transfer sheets 704 and 705 are also installed at the interface between the water channel 804 and the metal case 611.
  • the width of the heat transfer sheet installed on the water channel side outside the metal case 611 is made smaller than the width of the water channel 804.
  • FIG. 24 is a perspective view of a power semiconductor module according to the present invention.
  • the second embodiment is different from the second embodiment in that the circuit of the resin sealing body 903 has a 2-in-1 circuit configuration shown in FIG.
  • a structure in which the two arm circuits of the upper arm circuit and the lower arm circuit are integrated into a module like the power semiconductor module of the third embodiment is called a 2-in-1 structure.
  • the 2-in-1 structure can reduce the number of output terminals compared to the 1-in-1 structure in which each arm circuit is modularized.
  • an example of a 2in1 structure is shown, but the number of terminals can be further reduced by using a 3in1 structure, a 4in1 structure, a 6in1 structure, or the like.
  • an upper arm circuit and a lower arm circuit are arranged side by side and arranged opposite to a metal flat plate with an insulating layer interposed therebetween, thereby reducing the inductance of the circuit due to a magnetic field canceling effect. be able to.
  • the resin sealing body 903 is a series of an upper arm IGBT 101U and a lower arm IGBT 101L. Further, 42U and 42L, 43U and 43L which are front and back surfaces of the resin sealing body 903 are cooling surfaces. Also, gate terminals 21U and 21L of the upper and lower arms as control terminals, sense emitter terminals 25U and 25L of the upper and lower arms, emitter terminals (DC negative electrode connection terminals) 22L of the lower arm as power terminals, collector terminals (DC positive electrodes) of the upper arm Connection terminal) 23U and intermediate terminal (AC connection terminal) 24M are each drawn out from the first insulating material 601 in the same direction.
  • FIG. 26 is a perspective view of a region excluding the first insulating material 601 of FIG. 24, the insulating layer 302 of the ceramic substrate 12, and the heat radiating portions 402U and 402L in order to facilitate understanding of the circuit diagram.
  • the upper arm IGBT 101U and the diode 110U have a collector electrode and a cathode electrode connected to the collector circuit 203U, and an emitter electrode and an anode electrode connected to the emitter circuit 202U.
  • the lower arm IGBT 101L and the diode 110L have a collector electrode and a cathode electrode connected to the collector circuit 203L, and an emitter electrode and an anode electrode connected to the emitter circuit 202L.
  • the IGBT 101 is provided with a gate electrode and a sense emitter electrode, and is connected to terminals 21 and 25.
  • the upper arm emitter circuit 202U and the lower arm collector circuit 203L are connected to each other through the intermediate electrode 202M. In this way, the upper arm circuit and the lower arm circuit are electrically connected by the intermediate electrode 202M, and an upper and lower arm series circuit as shown in FIG. 25 is formed.
  • FIG. 27 is a schematic sectional view taken along the dotted line BB ′.
  • upper and lower arm emitter circuits 202U and 202L are provided on the chip mounting surface of the insulating layer 302.
  • metal heat radiation layers 402U and 402L of upper and lower arms to be heat radiation layers are respectively provided.
  • the widths of the metal layers 402U and 402L are made smaller than the respective emitter circuits 202U and 202L.
  • seat 702 also about the heat-transfer sheet
  • the respective heat radiation surfaces can be formed in the same plane.
  • the heat transfer sheets 702U, 702L, 703U, and 703L can be made uniform in clearance when a plurality of sheets are used.
  • the metal heat radiation layers of the heat transfer sheets 702U, 702L, 703U, and 703L Intrusion to the side can be prevented.
  • productivity in the manufacturing process can be improved by integrating the insulating layers 302 and 303 with the upper and lower arm circuits and the metal heat dissipation layer.
  • the first insulating material 601 and the upper and lower arms can be integrated and the above effect can be exhibited, the insulating layers 302U and 302L can also be divided.
  • the present invention is not limited to the above-described embodiments, and various designs can be made without departing from the spirit of the present invention described in the claims. It can be changed.
  • the above-described embodiment has been described in detail for easy understanding of the present invention, and is not necessarily limited to one having all the configurations described.
  • a part of the configuration of an embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of an embodiment.
  • SYMBOLS 12 Ceramic substrate, 13 ... Ceramic substrate, 101 ... IGBT, 110 ... Diode, 21 ... Gate terminal, 22 ... Emitter terminal, 23 ... Collector terminal, 24 ... Intermediate terminal, 25 ... Sense emitter terminal, 202 ... Emitter circuit, 203 DESCRIPTION OF SYMBOLS ... Collector circuit 302 ... Ceramic insulating layer 303 ... Ceramic insulating layer 42 ... Heat radiation surface 43 ... Heat radiation surface 402 ... Metal heat radiation layer 403 ... Metal heat radiation layer 502 ... Metal joint part 503 ... Metal joint part 601 ... first insulating material, 602 ... second insulating material, 603 ... third insulating material, 611 ... metal case, 702 ... heat transfer sheet, 703 ... heat transfer sheet, 803 ... water channel, 804 ... water channel

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'objectif de la présente invention est d'améliorer les caractéristiques d'isolation et les caractéristiques de dissipation de chaleur d'un module à semi-conducteur de puissance scellé à la résine pouvant présenter une plus haute tension de tenue. Afin de résoudre le problème, l'invention porte sur un module à semi-conducteur de puissance qui est équipé d'un corps scellé à la résine qui est pourvu : d'un circuit sur lequel est monté un élément à semi-conducteur ; d'une couche isolante qui est disposée au moins sur une surface du circuit ; d'une couche métallique de dissipation de chaleur qui est disposée sur la surface de la couche isolante à l'opposé de la surface sur laquelle le circuit est disposé ; et d'un premier matériau isolant qui enrobe le circuit, la couche isolante et la couche métallique de dissipation de chaleur de manière que la surface de la couche métallique de dissipation de chaleur soit apparente. Le module à semi-conducteur de puissance est caractérisé en ce que : le corps scellé à la résine est pourvu d'une feuille transmettant la chaleur qui est disposée sur la surface de la couche métallique de dissipation de chaleur, et d'un second matériau isolant qui enrobe le premier matériau isolant et la feuille transmettant la chaleur de manière que la surface de la feuille transmettant la chaleur soit apparente ; la couche métallique de dissipation de chaleur est disposée de manière qu'une section projetée de la couche métallique de dissipation de chaleur soit incluse dans une section projetée du circuit lorsqu'on projette la couche métallique de dissipation de chaleur dans la direction de stratification de la couche métallique de dissipation de chaleur et du circuit ; et la feuille transmettant la chaleur est disposée de manière qu'une section projetée de la feuille transmettant la chaleur soit incluse dans une section projetée de la couche isolante lorsqu'on projette la feuille transmettant la chaleur dans la direction de stratification de la feuille transmettant la chaleur et de la couche isolante.
PCT/JP2015/076834 2014-11-13 2015-09-24 Module à semi-conducteur de puissance WO2016076015A1 (fr)

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JP2018101768A (ja) * 2016-12-16 2018-06-28 東洋インキＳｃホールディングス株式会社 複合部材
CN110050341A (zh) * 2016-12-06 2019-07-23 株式会社东芝 半导体装置
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DE102021115845A1 (de) 2021-06-18 2022-12-22 Rolls-Royce Deutschland Ltd & Co Kg Leiterplattenanordnung

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WO2019235146A1 (fr) * 2018-06-08 2019-12-12 ローム株式会社 Module à semi-conducteur
JP7196047B2 (ja) 2019-09-18 2022-12-26 日立Astemo株式会社 電気回路体、電力変換装置、および電気回路体の製造方法
JP6906714B1 (ja) * 2020-04-10 2021-07-21 三菱電機株式会社 電力用半導体装置および電力変換装置

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DE102021115845A1 (de) 2021-06-18 2022-12-22 Rolls-Royce Deutschland Ltd & Co Kg Leiterplattenanordnung

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